JP2018503060A - 半導体材料から構成される被覆を有する、ペロブスカイト粒子 - Google Patents
半導体材料から構成される被覆を有する、ペロブスカイト粒子 Download PDFInfo
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- JP2018503060A JP2018503060A JP2017524046A JP2017524046A JP2018503060A JP 2018503060 A JP2018503060 A JP 2018503060A JP 2017524046 A JP2017524046 A JP 2017524046A JP 2017524046 A JP2017524046 A JP 2017524046A JP 2018503060 A JP2018503060 A JP 2018503060A
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000026954 response to X-ray Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005029 sieve analysis Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- INDZTCRIYSRWOH-UHFFFAOYSA-N undec-10-enyl carbamimidothioate;hydroiodide Chemical compound I.NC(=N)SCCCCCCCCCC=C INDZTCRIYSRWOH-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003828 vacuum filtration Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- 238000002424 x-ray crystallography Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
・MeNH3I:PbI2
・(CH3NH3)Pb(I,Br)3(Dirinら、2014, DOI: 10.1021/ja5006288)
・CH3NH3SnI3(Noelら、2014, DOI: 10.1039/c4ee01076k)
・(CH3CH2NH3)PbI3(Imら、2014, DOI: 10.1186/1556-276X- 7-353)。
・CH3−NH3I:PbI2=Pb CH3NH3 I3
・CH3−CH2−NH3I:PbI2=Pb CH3NH3 I3
・HO−CH2−CH2−NH3:PbI2=Pb HO−CH2−CH2−NH3 I3
・Ph−CH2−CH2−NH3I:PbI2=Pb (Ph−CH2−CH2−NH3)2 I4。
・Gd2O2S:Pr、Ce(ガドリニウムオキシスルフィド、プラセオジム及びセリウムでドープ、約515nmで放射最大)、
・Gd2O2S:Tb(ガドリニウムオキシスルフィド、テルビウムでドープ、約545nmで放射最大)、
・Gd2O2S:Pr、Ce、F(ガドリニウムオキシスルフィド、プラセオジム、又はセリウム、又はフッ素でドープ、約510nmで放射最大)、
・YAG:Ce(イットリウム−アルミニウム−ガーネット、セリウムでドープ、約550nmで放射最大)、
・CsI:Tl(ヨウ化セシウム、タリウムでドープ、約525nmで放射最大)、
・CdI2:Eu(ユーロピウムでドープしたヨウ化カドミウム、約580nmで放射最大)、又は
・Lu2O3:Tb(酸化ルテニウム、テルビウムでドープ、約545nmで放射最大)
であり、その特徴は、515〜580nmの範囲で放射最大を有することであり、これによって、(CH3NH3)PbI3の吸収スペクトルに対して、450〜750nmで良好設計されている。シンチレータのBi4Ge3O12、若しくはBGO(ビスマスゲルマネート、約480nmで放射最大)は、(CH3NH3)BrI3、又は(CH3NH3)PbI3と良好に組み合わせることができ、これらは460〜510nmの範囲において、良好な吸収性を有する。
・Lu2SiO5:Ce、若しくはLSO(セシウムをドープしたルテニウムオキシオルトシリケート、約420nmで放射最大)、
・Lu1.8Y0.2SiO5:Ce(セシウムをドープしたルテニウムオキシオルトシリケート、約420nmで放射最大)、
・CdWO4(タングステン酸カドミウム、約475nmで放射最大)、
・CsI:Na(ヨウ化セシウム、ナトリウムでドープ、約420nmで放射最大)、又は
・NaI:Tl(タリウムをドープしたヨウ化ナトリウム、約415nmで放射最大)、
・Bi4Ge3O12、若しくはBGO(ビスマスゲルマネート、約480nmで放射最大)
・Gd2SiO5、若しくはGSO(ガドリニウムオキシオルトシリケート、セリウムでドープ、約440nmで放射最大)、又は
・CsBr:Eu(臭化セシウム、ユーロピウムでドープ、約445nmで放射最大)
であり、これらは前述のペロブスカイトと良好に組み合わせられる。
・Lu2O3:Eu(ユーロピウムをドープした酸化ルテニウム、約610〜625nmで放射最大)、
・Lu2O3:Tb(テルビウムをドープした酸化ルテニウム、約610〜625nmで放射最大)、又は
・Gd2O3:Eu(ユーロピウムをドープしたガドリウムオキシスルフィド、約610〜625nmで放射最大)、
・YGdO:(Eu、Pr)(ユーロピウム及び/又はプラセオジウムをドープしたイットリウムガドリウムオキシド、約610nmで放射最大)、
・GdGaO:Cr、Ce(クロム、及び/又はセシウムをドープしたガドリウムガリウムオキシド)、又は
・CuI(ヨウ化銅、約720nmで吸収最大)
は、(CH3NH3)PbI3と良好に組み合わせられる。
できる。
シンチレータコア及びペロブスカイトコーティングの体積は、シンチレータコアVScintillator、並びにペロブスカイト結晶の外皮体積VPerowskitから求められる。最適な比率を量るためには、ペロブスカイト結晶の密度ρPerowskit、並びにシンチレータの密度ρScintillatorが必要となり、これにそれぞれの質量WPerowskit、及びWScintillatorが割り当てられる。
・ペロブスカイトの体積パーセント式(VPerowskit%):
・目標とするコーティング体積(VPerowskit)、及びコーティング厚さ(rPerowskit)
a)請求項1から6までのいずれか1項に記載の被覆された粒子を含有する粉末を用意する工程、
b)前記粉末を、第一の電気的な接触部と、任意で少なくとも1つの第一の中間層とを有する基材上に施与する工程、
c)圧力をかけ、任意で温度処理をして、前記粉末を圧縮する工程、
d)任意で、少なくとも1つのさらなる中間層を施与する工程、及び
e)第二の電気的な接触部を施与する工程。
a)本発明により被覆された粒子を含有する粉末を用意する工程、
b)前記粉末を基材に施与する工程、及び
c)圧力をかけ、任意で温度処理をして、前記粉末を圧縮する工程。
Claims (15)
- ABX3型、及び/又はAB2X4型のペロブスカイト結晶を含有する被覆された粒子であって、ここでAは、元素周期表の第四周期以降の、1価、2価、又は3価の元素少なくとも1種、及び/又はこれらの混合物であり、好ましくはSn、Ba、Pb、Biであり、Bは1価のカチオンであり、該カチオンの体積パラメータは、各元素Aにおいてペロブスカイト格子形成に十分なものであり、好ましくは1価の、アミノ基を含有する、正に帯電した炭素化合物であり、さらに好ましくはアミジニウムイオン、グアニジニウムイオン、イソチウロニウムイオン、ホルムアミジニウムイオン、並びに第一級、第二級、第三級、及び四級化された有機アンモニウムイオン、特に好ましくは1〜10個の炭素を有する第一級、第二級、第三級、及び四級化された有機アンモニウムイオンであり、Xは、ハロゲン化物イオン、及び擬ハロゲン化物イオンから選択され、好ましくはCl、Br、及びI、並びにこれらの混合物から選択され、ここでペロブスカイト結晶を含有するコアは、少なくとも1種の半導体材料によって被覆されている、前記被覆された粒子。
- 前記コアが、0.01〜200μm、好ましくは0.1〜100μm、さらに好ましくは1〜10μmの直径を有し、かつ/又はここで少なくとも1種の半導体材料による被覆が、1〜1500nm、好ましくは10〜100nm、さらに好ましくは20〜50nmの厚さを有する、請求項1に記載の被覆された粒子。
- 前記コアが、さらに少なくとも1種のシンチレータを含有する、請求項1又は2に記載の被覆された粒子。
- 前記コア内にある前記少なくとも1種のシンチレータが、ペロブスカイト結晶でコーティングされている、請求項3に記載の被覆された粒子。
- 前記半導体材料が、少なくとも1種の電子伝導性材料及び/又は正孔伝導性材料を含有する、請求項1から4までのいずれか1項に記載の被覆された粒子。
- ABX3型、及び/又はAB2X4型のペロブスカイト結晶を含有する被覆された粒子の製造方法であって、ここでAは、元素周期表の第四周期以降の、1価、2価、又は3価の元素少なくとも1種、及び/又はこれらの混合物であり、好ましくはSn、Ba、Pb、Biであり、Bは1価のカチオンであり、該カチオンの体積パラメータは、各元素Aにおいてペロブスカイト格子形成に十分なものであり、好ましくは1価の、アミノ基を含有する、正に帯電した炭素化合物であり、さらに好ましくはアミジニウムイオン、グアニジニウムイオン、イソチウロニウムイオン、ホルムアミジニウムイオン、並びに第一級、第二級、第三級、及び四級化された有機アンモニウムイオン、特に好ましくは1〜10個の炭素を有する第一級、第二級、第三級、及び四級化された有機アンモニウムイオンであり、Xは、ハロゲン化物イオン、及び擬ハロゲン化物イオンから選択され、好ましくはCl、Br、及びI、並びにこれらの混合物から選択され、ここでペロブスカイト結晶を含有するコアは、少なくとも1種の半導体材料によって被覆されており、ここで少なくとも1種の半導体材料を、少なくとも1種の第一の溶剤によって溶液にし、ペロブスカイト結晶を含有するコアを前記溶液に添加し、続いて、さらなる物質を添加することにより、被覆された粒子を沈殿させ、最後に、前記第一の溶剤、及び前記さらなる物質を除去する、前記製造方法。
- ペロブスカイト結晶を含有する前記コアが、前記第一の溶剤に不溶性である、請求項6に記載の製造方法。
- 前記溶液を超音波処理にかけている間に、ペロブスカイト結晶を含有する前記コアを、前記溶液に添加する、請求項6又は7に記載の製造方法。
- 前記第一の溶剤及び前記さらなる物質を除去した後、前記被覆された粒子を、粉砕して粉末にする、請求項6から8までのいずれか1項に記載の製造方法。
- 請求項1から6までのいずれか1項に記載の被覆された粒子を含有する検出器、特にX線検出器、ガンマ線検出器、若しくは紫外線検出器、又は太陽電池。
- 検出器、特にX線検出器、ガンマ線検出器、若しくは紫外線検出器、又は太陽電池の製造方法であって、
a)請求項1から6までのいずれか1項に記載の被覆された粒子を含有する粉末を用意する工程、
b)前記粉末を、第一の電気的な接触部と、任意で少なくとも1つの第一の中間層とを有する基材上に施与する工程、
c)圧力をかけ、任意で温度処理をして、前記粉末を圧縮する工程、
d)任意で、少なくとも1つのさらなる中間層を施与する工程、及び
e)第二の電気的な接触部を施与する工程
を含む、前記製造方法。 - 前記工程c)において、前記粉末を圧縮するために圧力をかける前に、前記基材を加熱する、請求項11に記載の製造方法。
- スタンパ又はローラを用いることによって、又は等方圧によって圧力をかける、請求項11、又は12に記載の製造方法。
- 請求項1から6までのいずれか1項に記載の被覆された粒子を含有する層、特にX線、ガンマ線、若しくは紫外線を検出するための、又は太陽電池のための、層。
- 請求項1から6までのいずれか1項に記載の被覆された粒子を含有する層の製造方法であって、
a)請求項1から6までのいずれか1項に記載の被覆された粒子を含有する粉末を用意する工程、
b)前記粉末を基材に施与する工程、及び
c)圧力をかけ、任意で温度処理をして、前記粉末を圧縮する工程
を含む、前記製造方法。
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