JP2018186236A - 基板処理装置、排気管のコーティング方法及び基板処理方法 - Google Patents
基板処理装置、排気管のコーティング方法及び基板処理方法 Download PDFInfo
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- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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Abstract
Description
該処理容器に接続された排気管と、
該排気管を介して前記処理容器内を排気する排気手段と、
前記処理容器内の前記排気管近傍に設けられ、前記処理容器を介して前記排気管内にシリコン含有ガス及び酸化ガスの少なくとも一方を供給可能な排気管コーティング用ガスノズルと、
前記処理容器を加熱する加熱手段と、を有する。
11 インナーチューブ
20 ヒーター
30 マニホールド
40 処理ガスノズル
41、111 吐出孔
50 処理ガス供給配管
60〜64 バルブ
70 処理ガス供給源
71 シリコン含有ガス供給源
72 酸化ガス供給源
80 排気管
81 分岐排気管
90 自動制御バルブ
100 真空ポンプ
110 排気管コーティング用ガスノズル
120〜122 コーティング用ガス供給配管
160 ウエハボート
210 制御部
Claims (20)
- 基板を収容して処理可能な処理容器と、
該処理容器に接続された排気管と、
該排気管を介して前記処理容器内を排気する排気手段と、
前記処理容器内の前記排気管近傍に設けられ、前記処理容器を介して前記排気管内にシリコン含有ガス及び酸化ガスの少なくとも一方を供給可能な排気管コーティング用ガスノズルと、
前記処理容器を加熱する加熱手段と、を有する基板処理装置。 - 前記処理容器内にシリコン含有ガスを供給可能なシリコン含有ガス供給ノズルを更に有し、
前記排気管コーティング用ガスノズルは前記酸化ガスを供給可能であり、
前記排気手段により排気しながら、前記シリコン含有ガス供給ノズルから前記シリコン含有ガス、前記排気管コーティング用ガスノズルから前記酸化ガスを供給することにより、前記排気管内にSiO2コーティング膜の形成が可能である請求項1に記載の基板処理装置。 - 前記シリコン含有ガス供給ノズルからの前記シリコン含有ガスの供給と、前記排気管コーティング用ガスノズルからの前記酸化ガスの供給を交互に行わせる制御手段を更に有し、
ALD成膜により前記SiO2コーティング膜の形成が可能である請求項2に記載の基板処理装置。 - 前記排気管コーティング用ガスノズルから前記シリコン含有ガス及び前記酸化ガスを交互に供給させる制御手段を更に有し、
ALD成膜により前記排気管内にSiO2コーティング膜を形成することが可能である請求項1に記載の基板処理装置。 - 前記制御手段は、前記基板が前記処理容器に収容されていないときに、前記排気管内に前記SiO2コーティング膜を形成する請求項3又は4に記載の基板処理装置。
- 前記処理容器内にクリーニングガスを供給可能なクリーニングガスノズルを更に有し、
前記基板が前記処理容器に収容されていないときは、該クリーニングガスノズルからクリーニングガスが供給されて前記処理容器内のクリーニングが行われた後を含む請求項5に記載の基板処理装置。 - 前記処理容器は、水平に保持した複数の基板を鉛直方向に所定間隔を空けて積載可能な基板保持具を収容可能な縦長の円筒形の側面を含む形状を有するとともに、該側面の内周面に沿った円筒形の側面を有するインナーチューブを有し、
前記排気管コーティング用ガスノズルは、前記インナーチューブの内側に設けられた請求項1乃至6のいずれか一項に記載の基板処理装置。 - 前記処理容器内には、処理ガスを供給可能な処理ガスノズルが複数設けられ、前記基板上に成膜処理を行うことが可能である請求項1乃至7のいずれか一項に記載の基板処理装置。
- 前記シリコン含有ガスはシランガスであり、
前記酸化ガスはオゾンガスである請求項1乃至8のいずれか一項に記載の基板処理装置。 - 処理容器に接続された排気管を介して前記処理容器内を排気する工程と、
前記処理容器内の前記排気管近傍から酸化ガスを供給するとともに、前記処理容器内の任意の箇所からシリコン含有ガスを供給し、前記排気管内にSiO2コーティング膜を形成する工程と、を有する排気管のコーティング方法。 - 前記酸化ガス及び前記シリコン含有ガスは交互に供給され、ALD成膜により前記排気管内に前記SiO2コーティング膜を形成する請求項10に記載の排気管のコーティング方法。
- 前記シリコン含有ガスは、前記処理容器内の前記排気管近傍から供給される請求項11に記載の排気管のコーティング方法。
- 前記酸化ガス及び前記シリコン含有ガスは、前記処理容器内の前記排気管近傍に設けられた同一ノズルから交互に供給される請求項12に記載の排気管のコーティング方法。
- 前記排気管内に前記SiO2コーティング膜を形成する工程は、前記処理容器内に処理対象が収容されていないときに行われる請求項10乃至13のいずれか一項に記載の排気管のコーティング方法。
- 前記処理容器内をドライクリーニングする工程を更に有し、
前記排気管内に前記SiO2コーティング膜を形成する工程は、前記処理容器内をドライクリーニングする工程の後に行われる請求項14に記載の排気管のコーティング方法。 - 前記シリコン含有ガスはシランガスであり、
前記酸化ガスはオゾンガスである請求項10乃至15のいずれか一項に記載の排気管のコーティング方法。 - 前記処理容器内には、処理ガスを供給する処理ガスノズルが設けられ、
前記排気管内に前記SiO2コーティング膜を形成する工程は、前記処理ガスノズル内がコーティングされないように、前記処理ガスノズル内を不活性ガスでパージしながら行われる請求項10乃至16のいずれか一項に記載の排気管のコーティング方法。 - 請求項10乃至17のいずれか一項に記載の排気管のコーティング方法を実施する工程と、
前記処理容器内に基板を搬入する工程と、
前記基板に処理ガスを供給し、前記基板を処理する工程と、を有する基板処理方法。 - 前記処理ガスは、互いに反応して反応生成物を堆積可能な複数の処理ガスを含み、
前記基板を処理する工程は、前記基板上に前記反応生成物からなる膜を堆積させる工程である請求項18に記載の基板処理方法。 - 前記処理容器は、水平に保持した複数の基板を鉛直方向に所定間隔を空けて積載可能な基板保持具を収容可能な縦長の円筒形の側面を含む形状を有し、
前記膜を堆積させる工程は、前記複数の基板上に行われる請求項19に記載の基板処理方法。
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JP2017088691A JP6820793B2 (ja) | 2017-04-27 | 2017-04-27 | 基板処理装置、排気管のコーティング方法及び基板処理方法 |
KR1020180047108A KR102333928B1 (ko) | 2017-04-27 | 2018-04-24 | 기판 처리 장치, 배기관의 코팅 방법 및 기판 처리 방법 |
US15/962,252 US10876204B2 (en) | 2017-04-27 | 2018-04-25 | Substrate processing apparatus, exhaust pipe coating method and substrate processing method |
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KR20230115484A (ko) * | 2022-01-27 | 2023-08-03 | 아리온주식회사 | 200l 이상 대용량 케미컬 공급장치 및 그 제어방법 |
KR20230115489A (ko) * | 2022-01-27 | 2023-08-03 | 아리온주식회사 | 독립 퍼지수단을 가지는 케미컬 공급장치 및 그 제어방법 |
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US11155916B2 (en) * | 2018-09-21 | 2021-10-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and methods for pumping gases from a chamber |
US11703229B2 (en) * | 2018-12-05 | 2023-07-18 | Yi-Ming Hung | Temperature adjustment apparatus for high temperature oven |
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US10876204B2 (en) | 2020-12-29 |
KR102333928B1 (ko) | 2021-12-02 |
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