JP2018170152A - Oled表示装置の製造方法、マスク及びマスクの設計方法 - Google Patents

Oled表示装置の製造方法、マスク及びマスクの設計方法 Download PDF

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Publication number
JP2018170152A
JP2018170152A JP2017066366A JP2017066366A JP2018170152A JP 2018170152 A JP2018170152 A JP 2018170152A JP 2017066366 A JP2017066366 A JP 2017066366A JP 2017066366 A JP2017066366 A JP 2017066366A JP 2018170152 A JP2018170152 A JP 2018170152A
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Prior art keywords
opening
mask
light emitting
organic light
edge
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Japanese (ja)
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JP2018170152A5 (enExample
Inventor
松枝 洋二郎
Yojiro Matsueda
洋二郎 松枝
高取 憲一
Kenichi Takatori
憲一 高取
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Tianma Japan Ltd
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Tianma Japan Ltd
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Priority to JP2017066366A priority Critical patent/JP2018170152A/ja
Priority to CN201810158926.1A priority patent/CN108695361B/zh
Priority to US15/937,899 priority patent/US10263185B2/en
Publication of JP2018170152A publication Critical patent/JP2018170152A/ja
Publication of JP2018170152A5 publication Critical patent/JP2018170152A5/ja
Priority to JP2021176444A priority patent/JP7232882B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2017066366A 2017-03-29 2017-03-29 Oled表示装置の製造方法、マスク及びマスクの設計方法 Pending JP2018170152A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017066366A JP2018170152A (ja) 2017-03-29 2017-03-29 Oled表示装置の製造方法、マスク及びマスクの設計方法
CN201810158926.1A CN108695361B (zh) 2017-03-29 2018-02-26 Oled显示装置的制造方法、掩模及掩模的设计方法
US15/937,899 US10263185B2 (en) 2017-03-29 2018-03-28 Method of manufacturing OLED display device, mask, and method of designing mask
JP2021176444A JP7232882B2 (ja) 2017-03-29 2021-10-28 Oled表示装置の製造方法、マスク及びマスクの設計方法

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Application Number Priority Date Filing Date Title
JP2017066366A JP2018170152A (ja) 2017-03-29 2017-03-29 Oled表示装置の製造方法、マスク及びマスクの設計方法

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JP2018170152A5 JP2018170152A5 (enExample) 2020-04-16

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US (1) US10263185B2 (enExample)
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Cited By (2)

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WO2021199401A1 (ja) * 2020-04-02 2021-10-07 シャープ株式会社 蒸着マスク、表示パネル、及び表示パネルの製造方法
WO2024185969A1 (ko) * 2023-03-06 2024-09-12 삼성디스플레이 주식회사 마스크, 이를 포함하는 마스크 어셈블리 및 표시 장치의 제조 방법

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CA3002752A1 (en) 2015-10-26 2017-05-04 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
KR20260049653A (ko) 2016-12-02 2026-04-14 오티아이 루미오닉스 인크. 방출 영역 위에 배치된 전도성 코팅을 포함하는 디바이스 및 이를 위한 방법
CN108735915B (zh) * 2017-04-14 2021-02-09 上海视涯技术有限公司 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
KR20250036969A (ko) 2017-04-26 2025-03-14 오티아이 루미오닉스 인크. 표면의 코팅을 패턴화하는 방법 및 패턴화된 코팅을 포함하는 장치
KR20260023089A (ko) 2017-05-17 2026-02-20 오티아이 루미오닉스 인크. 패턴화 코팅 위에 전도성 코팅을 선택적으로 증착시키는 방법 및 전도성 코팅을 포함하는 디바이스
US11751415B2 (en) 2018-02-02 2023-09-05 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
WO2019180846A1 (ja) * 2018-03-20 2019-09-26 シャープ株式会社 成膜用マスクおよびそれを用いた表示装置の製造方法
US11489136B2 (en) 2018-05-07 2022-11-01 Oti Lumionics Inc. Method for providing an auxiliary electrode and device including an auxiliary electrode
WO2019218606A1 (zh) 2018-05-14 2019-11-21 昆山国显光电有限公司 掩膜板、显示器件、显示面板及显示终端
JP2022508040A (ja) 2018-11-23 2022-01-19 オーティーアイ ルミオニクス インコーポレーテッド 光透過領域を含むオプトエレクトロニクスデバイス
US11773477B2 (en) * 2018-12-25 2023-10-03 Dai Nippon Printing Co., Ltd. Deposition mask
JP6900961B2 (ja) * 2019-02-28 2021-07-14 セイコーエプソン株式会社 画像表示装置および虚像表示装置
CN116456753A (zh) 2019-03-07 2023-07-18 Oti照明公司 一种光电子器件
KR20250110358A (ko) 2019-04-18 2025-07-18 오티아이 루미오닉스 인크. 핵 생성 억제 코팅 형성용 물질 및 이를 포함하는 디바이스
WO2020225778A1 (en) 2019-05-08 2020-11-12 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
CN110137238A (zh) 2019-06-21 2019-08-16 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
CN114097102B (zh) 2019-06-26 2023-11-03 Oti照明公司 包括具有光衍射特征的光透射区域的光电设备
US11832473B2 (en) 2019-06-26 2023-11-28 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
WO2021028800A1 (en) 2019-08-09 2021-02-18 Oti Lumionics Inc. Opto-electronic device including an auxiliary electrode and a partition
CN110943109A (zh) * 2019-11-22 2020-03-31 武汉华星光电半导体显示技术有限公司 显示面板及显示面板的制备方法
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JP7403883B2 (ja) 2019-12-24 2023-12-25 オーティーアイ ルミオニクス インコーポレーテッド キャッピング層を含む発光デバイスおよびそれを製造するための方法
KR102799532B1 (ko) * 2020-02-07 2025-04-23 삼성디스플레이 주식회사 마스크 조립체 및 그 제조 방법
JP7749925B2 (ja) * 2020-03-13 2025-10-07 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法
CN114556566B (zh) * 2020-09-18 2023-12-12 京东方科技集团股份有限公司 一种显示基板、显示面板及显示装置
US12672476B2 (en) 2020-10-29 2026-06-30 Oti Lumionics Inc. Opto-electronic device with nanoparticle deposited layers
KR20250139404A (ko) 2020-12-07 2025-09-23 오티아이 루미오닉스 인크. 핵 생성 억제 코팅 및 하부 금속 코팅을 사용한 전도성 증착 층의 패턴화
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TWI826181B (zh) * 2022-12-13 2023-12-11 達運精密工業股份有限公司 金屬遮罩結構
TW202440965A (zh) * 2023-04-06 2024-10-16 達運精密工業股份有限公司 金屬遮罩及其製造方法
TWI878962B (zh) * 2023-07-07 2025-04-01 達運精密工業股份有限公司 金屬遮罩
JP2026522248A (ja) * 2023-08-02 2026-07-07 ヤス カンパニー リミテッド 蒸着装備及び蒸着システム

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