JP2018139287A - 最適化された低エネルギ/高生産性の蒸着システム - Google Patents
最適化された低エネルギ/高生産性の蒸着システム Download PDFInfo
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- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 230000008020 evaporation Effects 0.000 title 1
- 238000001704 evaporation Methods 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 333
- 239000000758 substrate Substances 0.000 claims abstract description 150
- 239000012636 effector Substances 0.000 claims abstract description 103
- 238000012546 transfer Methods 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 abstract description 25
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Abstract
【解決手段】基板処理ツールのための機械式インデクサ204が、第1および第2エンドエフェクタ216、220、224、228を各々が有する第1および第2アーム208、212を備える。第1アームは、第1アームの第1エンドエフェクタを基板処理ツールの複数の処理ステーションに選択的に配置すると共に、第1アームの第2エンドエフェクタを基板処理ツールの複数の処理ステーションに選択的に配置するために、第1スピンドル上で回転するように構成されている。第2アームは、第2アームの第1エンドエフェクタを基板処理ツールの複数の処理ステーションに選択的に配置すると共に、第2アームの第2エンドエフェクタを基板処理ツールの複数の処理ステーションに選択的に配置するために、第2スピンドル上で回転するように構成されている。
【選択図】図2A
Description
本願は、2017年1月23日出願の米国仮出願第62/449,325号の利益を主張する。上記の出願の開示全体が、参照によって本明細書に組み込まれる。
Claims (17)
- 基板処理ツールのための機械式インデクサであって、
第1エンドエフェクタおよび第2エンドエフェクタを有する第1アームであって、(i)前記第1アームの前記第1エンドエフェクタを前記基板処理ツールの複数の処理ステーションに選択的に配置すると共に、(ii)前記第1アームの前記第2エンドエフェクタを前記基板処理ツールの前記複数の処理ステーションに選択的に配置するために、第1スピンドル上で回転するように構成された、第1アームと、
第1エンドエフェクタおよび第2エンドエフェクタを有する第2アームであって、(i)前記第2アームの前記第1エンドエフェクタを前記基板処理ツールの前記複数の処理ステーションに選択的に配置すると共に、(ii)前記第2アームの前記第2エンドエフェクタを前記基板処理ツールの前記複数の処理ステーションに選択的に配置するために、第2スピンドル上で回転するように構成された、第2アームと、
を備え、
前記複数の処理ステーションの少なくとも1つは、前記基板処理ツールのロードステーションに対応し、
前記第1アームは、前記第1アームの前記第1エンドエフェクタまたは前記第2エンドエフェクタが前記ロードステーションに配置されると同時に、前記第2アームの前記第1エンドエフェクタまたは前記第2エンドエフェクタが前記ロードステーションに配置されるように、前記第2アームと独立して回転するように構成される、機械式インデクサ。 - 請求項1に記載の機械式インデクサであって、前記第1スピンドルおよび前記第2スピンドルは同軸である、機械式インデクサ。
- 請求項1に記載の機械式インデクサであって、前記第1アームおよび前記第2アームの各々は、前記基板処理ツールの前記複数の処理ステーションに対して上下されるように構成される、機械式インデクサ。
- 請求項1に記載の機械式インデクサであって、前記第2スピンドルは、前記第1スピンドル内に配置される、機械式インデクサ。
- 請求項1に記載の機械式インデクサであって、
前記第1アームおよび前記第2アームは、第1構成になるように回転可能であり、
前記第1構成では、(i)前記第1アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の第1処理ステーションおよび第3処理ステーションにそれぞれ配置され、(ii)前記第2アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の第2処理ステーションおよび第4処理ステーションにそれぞれ配置される、機械式インデクサ。 - 請求項5に記載の機械式インデクサであって、
前記第1アームおよび前記第2アームは、第2構成になるように回転可能であり、
前記第2構成では、(i)前記第1アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の前記第1処理ステーションおよび前記第3処理ステーションにそれぞれ配置され、(ii)前記第2アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の前記第3処理ステーションおよび前記第1処理ステーションにそれぞれ配置される、機械式インデクサ。 - 請求項6に記載の機械式インデクサであって、前記第1処理ステーションは、前記基板処理ツールの前記ロードステーションに対応する、機械式インデクサ。
- 請求項6に記載の機械式インデクサであって、(i)前記第1処理ステーションおよび前記第3処理ステーションは、前記基板処理ツールの反対側の角に配置され、(ii)前記第2処理ステーションおよび前記第4処理ステーションは、前記基板処理ツールの反対側の角に配置される、機械式インデクサ。
- 請求項1に記載の機械式インデクサであって、
前記第1アームおよび前記第2アームは、第1構成になるように回転可能であり、
前記第1構成では、(i)前記第1アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の第1処理ステーションおよび第4処理ステーションにそれぞれ配置され、(ii)前記第2アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の第2処理ステーションおよび第3処理ステーションにそれぞれ配置される、機械式インデクサ。 - 請求項9に記載の機械式インデクサであって、
前記第1アームおよび前記第2アームは、第2構成になるように回転可能であり、
前記第2構成では、(i)前記第1アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の前記第1処理ステーションおよび前記第4処理ステーションにそれぞれ配置され、(ii)前記第2アームの前記第1エンドエフェクタおよび前記第2エンドエフェクタが、前記複数の処理ステーションの内の前記第4処理ステーションおよび前記第1処理ステーションにそれぞれ配置される、機械式インデクサ。 - 請求項10に記載の機械式インデクサであって、(i)前記第1処理ステーションおよび前記第4処理ステーションは、前記基板処理ツールの第1側面に配置され、(ii)前記第2処理ステーションおよび前記第3処理ステーションは、前記第1側面と反対側にある前記基板処理ツールの第2側面に配置される、機械式インデクサ。
- 請求項10に記載の機械式インデクサであって、前記第1処理ステーションおよび前記第4処理ステーションは、前記基板処理ツールのロードステーションに対応する、機械式インデクサ。
- 基板処理ツールであって、
真空移送モジュールと、
前記真空移送モジュールに接続された複数の処理モジュールであって、前記複数の処理モジュールの少なくとも1つは、請求項1の機械式インデクサを備える、複数の処理モジュールと、
を備える、基板処理ツール。 - 請求項13に記載の基板処理ツールであって、前記複数の処理モジュールは、前記真空移送モジュールの第1側面に接続された第1および第2処理モジュールと、前記真空移送モジュールの第2側面に接続された第3および第4処理モジュールと、を含む、基板処理ツール。
- 請求項14に記載の基板処理ツールであって、さらに、(i)前記第1側面と、(ii)前記第1および第2処理モジュールとの間に配置されたアダプタプレートを備え、
前記アダプタプレートは、前記真空移送モジュールの前記第1側面と接続するように構成された平坦な側面と、前記第1および第2処理モジュールと接続するように構成された角度付きの側面とを備える、基板処理ツール。 - 請求項14に記載の基板処理ツールであって、前記真空移送モジュールの前記第1側面および前記第2側面は面取りされている、基板処理ツール。
- 請求項16に記載の基板処理ツールであって、さらに、(i)前記第1側面と、(ii)前記第1および第2処理モジュールと、の間に配置されたアダプタプレートを備え、 前記アダプタプレートは、前記真空移送モジュールの前記第1側面と接続するように構成された角度付きの側面と、前記第1および第2処理モジュールと接続するように構成された平坦な側面とを備える、基板処理ツール。
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