JP2018085705A - 電子部品およびその製造方法 - Google Patents
電子部品およびその製造方法 Download PDFInfo
- Publication number
- JP2018085705A JP2018085705A JP2016229474A JP2016229474A JP2018085705A JP 2018085705 A JP2018085705 A JP 2018085705A JP 2016229474 A JP2016229474 A JP 2016229474A JP 2016229474 A JP2016229474 A JP 2016229474A JP 2018085705 A JP2018085705 A JP 2018085705A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bump
- electronic component
- component according
- via wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 221
- 238000007789 sealing Methods 0.000 claims description 22
- 230000006866 deterioration Effects 0.000 abstract description 5
- 230000000149 penetrating effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- 238000010897 surface acoustic wave method Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Wire Bonding (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
図1は、比較例1に係る電子部品の断面図である。図1に示すように、基板10の上面に、基板20が実装されている。基板10は、絶縁基板であり、例えばHTCC(High Temperature Co-fired Ceramic)またはLTCC(Low Temperature Co-fired Ceramic)等のセラミックス基板または樹脂基板である。基板10の下面および上面に端子14および18が設けられている。端子14は、外部と電気的に接続するための外部端子であり、例えばフットパッドである。端子18はバンプ38が接合するパッドである。基板10を貫通するビア配線16が設けられている。ビア配線16は、端子14と18とを電気的に接続する。端子14、18およびビア配線16は、銅層、金層またはアルミニウム層等の金属層である。
図9(a)から図13は、実施例2に係る電子部品の製造方法を示す断面図である。図9(a)に示すように、支持基板10aの上面に圧電基板10bの下面を接合する。支持基板10aは例えばサファイア基板であり、圧電基板10bは例えば膜厚が10μmから20μmのタンタル酸リチウム基板である。この接合はウエハ状態で行なう。接合の方法としては、支持基板10aの上面と圧電基板10bの下面とを活性化させて常温接合する方法、または接着剤で接合する方法等がある。
10a 支持基板
10b 圧電基板
12、22 機能部
14、18、28 端子
16 ビア配線
25 空隙
30 封止部
32 リッド
34 保護膜
37 環状金属層
38 バンプ
54 貫通孔
Claims (9)
- 第1基板と、
前記第1基板の上面に空隙を挟み下面が対向するように前記第1基板上に実装された第2基板と、
前記第1基板の上面と前記第2基板の下面とを接合し、前記第1基板と前記第2基板とを電気的に接続するバンプと、
前記第1基板の下面に設けられた端子と、
前記第1基板と前記バンプの少なくとも一部とを貫通し、前記バンプと前記端子とを電気的に接続するビア配線と、
を具備する電子部品。 - 平面視において前記バンプは前記空隙に囲まれた請求項1記載の電子部品。
- 前記第1基板の上面に前記空隙を挟み対向するように前記第2基板の下面に設けられた機能部を具備する請求項1または2記載の電子部品。
- 前記第1基板の上面に接合し、前記第2基板を囲み前記空隙を封止する封止部を具備する請求項3記載の電子部品。
- 前記機能部は弾性波素子である請求項3または4記載の電子部品。
- 前記ビア配線は前記バンプを貫通し前記第2基板に接する請求項1から5のいずれか一項記載の電子部品。
- 前記第1基板の線熱膨張係数は前記第2基板の線熱膨張係数より大きい請求項1から6のいずれか一項記載の電子部品。
- 前記第1基板は、支持基板と、前記支持基板上に接合された圧電基板と、を有する請求項1から7のいずれか一項記載の電子部品。
- 第1基板の上面と第2基板の下面とを接合し第1基板と第2基板とを電気的に接続するバンプを用い、前記第1基板の上面に空隙を挟み下面が対向するように前記第1基板上に前記第2基板を実装する工程と、
前記第1基板上に前記第2基板を実装する工程の後、前記第1基板と前記バンプの少なくとも一部を貫通する貫通孔を形成する工程と、
前記貫通孔内にビア配線を形成する工程と、
前記第1基板の下面に前記ビア配線と電気的に接続された端子を形成する工程と、
を含む電子部品の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016229474A JP2018085705A (ja) | 2016-11-25 | 2016-11-25 | 電子部品およびその製造方法 |
US15/697,812 US20180151794A1 (en) | 2016-11-25 | 2017-09-07 | Electronic component and method of fabricating the same |
CN201711171934.1A CN108110132A (zh) | 2016-11-25 | 2017-11-22 | 电子部件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016229474A JP2018085705A (ja) | 2016-11-25 | 2016-11-25 | 電子部品およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018085705A true JP2018085705A (ja) | 2018-05-31 |
Family
ID=62192893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016229474A Pending JP2018085705A (ja) | 2016-11-25 | 2016-11-25 | 電子部品およびその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20180151794A1 (ja) |
JP (1) | JP2018085705A (ja) |
CN (1) | CN108110132A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018164126A (ja) * | 2017-03-24 | 2018-10-18 | セイコーエプソン株式会社 | 振動デバイス、発振器、ジャイロセンサー、電子機器および移動体 |
JP7266996B2 (ja) * | 2018-11-20 | 2023-05-01 | 太陽誘電株式会社 | インダクタ、フィルタおよびマルチプレクサ |
TWI706857B (zh) * | 2019-01-29 | 2020-10-11 | 璦司柏電子股份有限公司 | 具有金屬導熱凸塊接墊的陶瓷基板組件、元件及其製法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008113178A (ja) * | 2006-10-30 | 2008-05-15 | Hitachi Media Electoronics Co Ltd | 中空封止素子およびその製造方法 |
JP2009278422A (ja) * | 2008-05-15 | 2009-11-26 | Hitachi Media Electoronics Co Ltd | 弾性表面波デバイス及びその製造方法 |
JP2010263114A (ja) * | 2009-05-08 | 2010-11-18 | Seiko Epson Corp | 電子部品とその製造方法 |
WO2011138877A1 (ja) * | 2010-05-07 | 2011-11-10 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
JP2015091065A (ja) * | 2013-11-06 | 2015-05-11 | 太陽誘電株式会社 | 電子部品およびモジュール |
JP2016152612A (ja) * | 2015-02-19 | 2016-08-22 | 太陽誘電株式会社 | 弾性波デバイス |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004201285A (ja) * | 2002-12-06 | 2004-07-15 | Murata Mfg Co Ltd | 圧電部品の製造方法および圧電部品 |
JP4744213B2 (ja) * | 2005-07-11 | 2011-08-10 | 日本電波工業株式会社 | 電子部品の製造方法 |
WO2008059674A1 (fr) * | 2006-11-13 | 2008-05-22 | Murata Manufacturing Co., Ltd. | Elément d'onde interne acoustique, dispositif d'onde interne acoustique et leur procédé de fabrication |
CN101965683B (zh) * | 2008-03-19 | 2014-01-29 | 株式会社村田制作所 | 表面声波装置 |
JP6509147B2 (ja) * | 2016-02-29 | 2019-05-08 | 太陽誘電株式会社 | 電子デバイス |
-
2016
- 2016-11-25 JP JP2016229474A patent/JP2018085705A/ja active Pending
-
2017
- 2017-09-07 US US15/697,812 patent/US20180151794A1/en not_active Abandoned
- 2017-11-22 CN CN201711171934.1A patent/CN108110132A/zh not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008113178A (ja) * | 2006-10-30 | 2008-05-15 | Hitachi Media Electoronics Co Ltd | 中空封止素子およびその製造方法 |
JP2009278422A (ja) * | 2008-05-15 | 2009-11-26 | Hitachi Media Electoronics Co Ltd | 弾性表面波デバイス及びその製造方法 |
JP2010263114A (ja) * | 2009-05-08 | 2010-11-18 | Seiko Epson Corp | 電子部品とその製造方法 |
WO2011138877A1 (ja) * | 2010-05-07 | 2011-11-10 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
JP2015091065A (ja) * | 2013-11-06 | 2015-05-11 | 太陽誘電株式会社 | 電子部品およびモジュール |
JP2016152612A (ja) * | 2015-02-19 | 2016-08-22 | 太陽誘電株式会社 | 弾性波デバイス |
Also Published As
Publication number | Publication date |
---|---|
US20180151794A1 (en) | 2018-05-31 |
CN108110132A (zh) | 2018-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6315716B2 (ja) | 弾性波デバイス | |
JP6509147B2 (ja) | 電子デバイス | |
JP6454299B2 (ja) | 弾性波デバイス | |
JP6556663B2 (ja) | 弾性波デバイス | |
JP6449836B2 (ja) | 電子部品およびその製造方法 | |
JP6963445B2 (ja) | 電子部品 | |
JP6653646B2 (ja) | 電子部品およびその製造方法 | |
JP6810599B2 (ja) | 電子部品およびその製造方法 | |
JP6934340B2 (ja) | 電子部品 | |
JP2012151698A (ja) | 弾性波デバイス | |
JP7370146B2 (ja) | 弾性波デバイス、フィルタおよびマルチプレクサ | |
JP2018085705A (ja) | 電子部品およびその製造方法 | |
JP2017152870A (ja) | 弾性波デバイス | |
JP7347955B2 (ja) | 弾性波デバイスおよびその製造方法、フィルタおよびマルチプレクサ | |
JP7340348B2 (ja) | 弾性波デバイス、フィルタおよびマルチプレクサ | |
JP7406331B2 (ja) | 電子デバイス、モジュールおよびウエハ | |
JP2019036784A (ja) | 電子部品およびその製造方法 | |
JP2018074051A (ja) | 電子部品およびその製造方法 | |
JP7068837B2 (ja) | 弾性波デバイスおよびその製造方法 | |
WO2006123653A1 (ja) | 圧電デバイス | |
JP2011182468A (ja) | 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器 | |
JP2021068975A (ja) | 電子部品、フィルタおよびマルチプレクサ | |
JP2014143757A (ja) | 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器 | |
JP2011211746A (ja) | 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180305 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180305 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190115 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190329 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191001 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200107 |