JP2018046263A - 基板処理装置および半導体装置の製造方法 - Google Patents
基板処理装置および半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 239000007788 liquid Substances 0.000 claims abstract description 137
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910001868 water Inorganic materials 0.000 claims abstract description 54
- 238000005530 etching Methods 0.000 claims abstract description 43
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000002253 acid Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 7
- 230000005484 gravity Effects 0.000 claims description 4
- 230000000087 stabilizing effect Effects 0.000 abstract description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 17
- 229910052721 tungsten Inorganic materials 0.000 description 17
- 239000010937 tungsten Substances 0.000 description 17
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
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- C—CHEMISTRY; METALLURGY
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【課題】基板に設けられた金属膜のエッチング量を安定させることができる基板処理装置を提供する。
【解決手段】実施形態によれば、基板処理装置は、第1容器と、第2容器と、制御部と、を備える。第1溶器は、リン酸を含む酸液と水とが混合され、基板に設けられた金属膜をエッチング可能な第1液体を貯留可能である。第2容器は、水を含む第2液体を貯留可能である。制御部は、第1液体の水濃度が第1液体のリン酸濃度の変化に対応して経時的に高くなるように、第2容器から第1容器への第2液体の供給を制御する。
【選択図】図1
Description
図1は、第1実施形態に係る基板処理装置の構成を概略的に示す模式図である。本実施形態に係る基板処理装置1は、例えば、ウェハ状の基板20に設けられた金属膜(不図示)を、液体30(第1液体)で除去するエッチング処理装置である。このエッチング処理装置のタイプは、複数のウェハを一括してエッチング処理する、いわゆるバッチ処理タイプである。基板20は、例えば、3次元的に積層された金属膜であり、メモリデバイスに用いられる。また、このような基板20に用いられる金属膜はタングステン(W)が含まれる。
ステップS2のエッチングによって、液体30に含まれた硝酸および酢酸は揮発する一方で、リン酸は揮発しない。その結果、図4に示すように、液体30内でリン酸濃度は相対的に上昇する。そこで、リン酸濃度とタングステンのエッチング量との相関について調べると、両者の相関は高い実験結果を得られた。また、水濃度の変動とエッチング量との相関についても高い実験結果を得られた。
図6は、第2実施形態に係る基板処理装置の構成を概略的に示す模式図である。図2では、第1実施形態と同様の構成要素については同じ符号を付し、詳細な説明は省略する。
第3実施形態について説明する。第3実施形態に係る基板処理装置の構成は、図6に示す基板処理装置2と同じである。本実施形態に係る基板処理装置は、第2実施形態とは異なる方法でエッチング中の液体40の水濃度を制御する。以下、図8を参照して本実施形態の水濃度の制御方法について説明する。
図9は、第4実施形態に係る基板処理装置の構成を概略的に示す模式図である。この基板処理装置4は、1枚ずつウェハをエッチング処理する、いわゆる枚葉タイプのエッチング処理装置である。
Claims (7)
- リン酸を含む酸液と水とが混合され、基板に設けられた金属膜をエッチング可能な第1液体を貯留可能な第1容器と、
水を含む第2液体を貯留可能な第2容器と、
前記第1液体の水濃度が前記第1液体のリン酸濃度の変化に対応して経時的に高くなるように、前記第2容器から前記第1容器への前記第2液体の供給を制御する制御部と、
を備える基板処理装置。 - 前記水濃度を検出する水濃度計をさらに備え、
前記制御部は、前記水濃度計の検出値が、前記第2液体の供給開始時間毎に予め設定された前記水濃度の設定値に一致するように前記第2液体の供給を制御する、請求項1に記載の基板処理装置。 - 前記リン酸濃度を検出するリン酸濃度計、前記第1液体の粘度を検出する粘度計、または前記第1液体の比重を検出する比重計をさらに備え、
前記制御部は、前記リン酸濃度計、前記粘度計、または前記比重計の検出結果に基づいて前記第2液体の供給を制御する、請求項1に記載の基板処理装置。 - 前記第1容器に対して前記第1液体を循環させる循環路と、
前記循環路を流れる前記第1液体の流速を検出する流速計と、をさらに備え、
前記制御部は、前記流速計の検出結果に基づいて前記第2液体の供給を制御する、請求項1に記載の基板処理装置。 - 前記制御部は、経時的に多くなるように予め設定された供給量に基づいて前記第2液体を断続的に供給させる、請求項1に記載の基板処理装置。
- 前記制御部は、経時的に短くなるように予め設定された間隔で前記第2液体を断続的に供給させる、請求項1に記載の基板処理装置。
- リン酸を含む酸液と水とが混合され、第1容器に貯留された第1液体を用いて基板に設けられた金属膜をエッチングし、
前記エッチング中に、前記第1液体の水濃度が前記第1液体のリン酸濃度の変化に対応して経時的に高くなるように、第2容器に貯留された水を含む第2液体を前記第1容器へ供給する、半導体装置の製造方法。
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US15/449,308 US10008400B2 (en) | 2016-09-16 | 2017-03-03 | Substrate processing device and method of manufacturing semiconductor device |
US15/989,887 US10403524B2 (en) | 2016-09-16 | 2018-05-25 | Substrate processing device and method of manufacturing semiconductor device |
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WO2020188990A1 (ja) * | 2019-03-19 | 2020-09-24 | 株式会社Screenホールディングス | 基板処理方法 |
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TWI630652B (zh) * | 2014-03-17 | 2018-07-21 | 斯克林集團公司 | 基板處理裝置及使用基板處理裝置之基板處理方法 |
CN109545721A (zh) * | 2018-12-05 | 2019-03-29 | 西安奕斯伟硅片技术有限公司 | 控制硅片腐蚀溶液浓度的方法、控制设备及控制系统 |
CN111599730A (zh) * | 2020-06-22 | 2020-08-28 | 上海华力微电子有限公司 | 刻蚀液供给装置及方法 |
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