JP2018035014A - ペリクルの製造方法 - Google Patents
ペリクルの製造方法 Download PDFInfo
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- JP2018035014A JP2018035014A JP2016167257A JP2016167257A JP2018035014A JP 2018035014 A JP2018035014 A JP 2018035014A JP 2016167257 A JP2016167257 A JP 2016167257A JP 2016167257 A JP2016167257 A JP 2016167257A JP 2018035014 A JP2018035014 A JP 2018035014A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000000126 substance Substances 0.000 claims abstract description 32
- 238000001039 wet etching Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 41
- 239000000243 solution Substances 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000008155 medical solution Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 96
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 93
- 239000010408 film Substances 0.000 description 84
- 238000005530 etching Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000012790 adhesive layer Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 238000010000 carbonizing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Chemical & Material Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
Abstract
【解決手段】Si基板21の一方の主面21aに20nm以上10μm以下のSiC膜11を形成する工程と、SiC膜11におけるSi基板21が存在する側の主面とは反対側の主面11aに、貫通孔を含み環状の支持体12を接着する工程と、支持体12を接着する工程の後で、Si基板21を除去するためにウェットエッチングすることが可能な薬液に対して、Si基板21、SiC膜11、および支持体12を相対的に動かす工程を備えた、ペリクルの製造方法。
【選択図】図6
Description
2 中間体
11 SiC(炭化ケイ素)膜
11a SiC膜の下面
11b SiC膜の上面
12 支持体
12a 支持体の貫通孔
12b 支持体の上面
13 接着剤層
21 Si(ケイ素)基板
21a Si基板の下面
21b Si基板の上面
CS 反応容器
HP 固定台
MA 薬液
MK マスク
PF ペリクルフレーム
PL Si基板の上面に対して平行な平面
PN パターン
Claims (8)
- 基板の一方の主面にSiC膜を形成する工程と、
前記SiC膜における前記基板が存在する側の主面とは反対側の主面に、貫通孔を含む支持体を接着する工程と、
前記支持体を接着する工程の後で、前記基板を除去する工程とを備えた、ペリクルの製造方法。 - 前記SiC膜の厚さは20nm以上10μm以下である、請求項1に記載のペリクルの製造方法。
- 前記基板はSiよりなる、請求項1または2に記載のペリクルの製造方法。
- 前記支持体は環状の平面形状を有する、請求項1〜3のいずれかに記載のペリクルの製造方法。
- 前記基板を除去する工程は、前記基板をウエットエッチングすることが可能な薬液に対して前記基板、前記SiC膜、および前記支持体を相対的に動かす工程を含む、請求項1〜4のいずれかに記載のペリクルの製造方法。
- 前記薬液に対して前記基板、前記SiC膜、および前記支持体を相対的に動かす工程において、前記基板、前記SiC膜、および前記支持体を、前記基板の他方の主面に対して平行な平面内の方向に動かす、請求項5に記載のペリクルの製造方法。
- 前記薬液に対して前記基板、前記SiC膜、および前記支持体を相対的に動かす工程において、前記基板、前記SiC膜、および前記支持体を回転させた状態で、前記薬液を前記基板の他方の主面に注入する、請求項6に記載のペリクルの製造方法。
- 前記薬液としてフッ酸および硝酸を含む混酸を用いる、請求項5〜7のいずれかに記載のペリクルの製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016167257A JP6944768B2 (ja) | 2016-08-29 | 2016-08-29 | ペリクルの製造方法 |
PCT/JP2017/030578 WO2018043347A1 (ja) | 2016-08-29 | 2017-08-25 | ペリクルの製造方法 |
US16/329,020 US11119402B2 (en) | 2016-08-29 | 2017-08-25 | Method for manufacturing of pellicle |
SG11202001427YA SG11202001427YA (en) | 2016-08-29 | 2017-08-25 | Method for Manufacturing of Pellicle |
KR1020197009034A KR102423321B1 (ko) | 2016-08-29 | 2017-08-25 | 펠리클의 제조 방법 |
EP17846352.7A EP3506010B1 (en) | 2016-08-29 | 2017-08-25 | Pellicle production method |
CN201780053409.1A CN109643059B (zh) | 2016-08-29 | 2017-08-25 | 防尘薄膜组件的制造方法 |
TW106129132A TWI744377B (zh) | 2016-08-29 | 2017-08-28 | 膠片之製造方法 |
Applications Claiming Priority (1)
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JP2016167257A JP6944768B2 (ja) | 2016-08-29 | 2016-08-29 | ペリクルの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2018035014A true JP2018035014A (ja) | 2018-03-08 |
JP6944768B2 JP6944768B2 (ja) | 2021-10-06 |
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JP2016167257A Active JP6944768B2 (ja) | 2016-08-29 | 2016-08-29 | ペリクルの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US11119402B2 (ja) |
EP (1) | EP3506010B1 (ja) |
JP (1) | JP6944768B2 (ja) |
KR (1) | KR102423321B1 (ja) |
CN (1) | CN109643059B (ja) |
SG (1) | SG11202001427YA (ja) |
TW (1) | TWI744377B (ja) |
WO (1) | WO2018043347A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019031361A1 (ja) * | 2017-08-08 | 2019-02-14 | エア・ウォーター株式会社 | ペリクルおよびペリクルの製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108699687B (zh) * | 2016-02-19 | 2022-03-01 | 爱沃特株式会社 | 化合物半导体基板、表膜、和化合物半导体基板的制造方法 |
SG11202001426UA (en) * | 2016-02-19 | 2020-03-30 | Air Water Inc | A Compound Semiconductor Substrate, A Pellicle Film, And A Method For Manufacturing A Compound Semiconductor Substrate |
WO2023101330A1 (ko) * | 2021-12-01 | 2023-06-08 | 주식회사 인포비온 | 극자외선 노광용 펠리클 및 이의 제조방법 |
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JP2009271262A (ja) * | 2008-05-02 | 2009-11-19 | Shin Etsu Chem Co Ltd | ペリクルおよびペリクルの製造方法 |
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2016
- 2016-08-29 JP JP2016167257A patent/JP6944768B2/ja active Active
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2017
- 2017-08-25 EP EP17846352.7A patent/EP3506010B1/en active Active
- 2017-08-25 SG SG11202001427YA patent/SG11202001427YA/en unknown
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WO2019031361A1 (ja) * | 2017-08-08 | 2019-02-14 | エア・ウォーター株式会社 | ペリクルおよびペリクルの製造方法 |
US11231647B2 (en) | 2017-08-08 | 2022-01-25 | Air Water Inc. | Pellicle and method for manufacturing pellicle |
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TW201813049A (zh) | 2018-04-01 |
CN109643059A (zh) | 2019-04-16 |
KR20190045261A (ko) | 2019-05-02 |
EP3506010A1 (en) | 2019-07-03 |
KR102423321B1 (ko) | 2022-07-22 |
SG11202001427YA (en) | 2020-03-30 |
US11119402B2 (en) | 2021-09-14 |
US20190204731A1 (en) | 2019-07-04 |
TWI744377B (zh) | 2021-11-01 |
WO2018043347A1 (ja) | 2018-03-08 |
EP3506010B1 (en) | 2023-06-07 |
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CN109643059B (zh) | 2023-08-04 |
JP6944768B2 (ja) | 2021-10-06 |
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