JP2017534177A5 - - Google Patents

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Publication number
JP2017534177A5
JP2017534177A5 JP2017521532A JP2017521532A JP2017534177A5 JP 2017534177 A5 JP2017534177 A5 JP 2017534177A5 JP 2017521532 A JP2017521532 A JP 2017521532A JP 2017521532 A JP2017521532 A JP 2017521532A JP 2017534177 A5 JP2017534177 A5 JP 2017534177A5
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JP
Japan
Prior art keywords
conductive
layer
package structure
conductive interconnect
high density
Prior art date
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Application number
JP2017521532A
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English (en)
Japanese (ja)
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JP2017534177A (ja
JP6672285B2 (ja
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Publication date
Priority claimed from US14/693,820 external-priority patent/US10157823B2/en
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Publication of JP2017534177A publication Critical patent/JP2017534177A/ja
Publication of JP2017534177A5 publication Critical patent/JP2017534177A5/ja
Application granted granted Critical
Publication of JP6672285B2 publication Critical patent/JP6672285B2/ja
Active legal-status Critical Current
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JP2017521532A 2014-10-31 2015-09-04 高密度ファンアウトパッケージ構造 Active JP6672285B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462073804P 2014-10-31 2014-10-31
US62/073,804 2014-10-31
US14/693,820 2015-04-22
US14/693,820 US10157823B2 (en) 2014-10-31 2015-04-22 High density fan out package structure
PCT/US2015/048514 WO2016069112A1 (en) 2014-10-31 2015-09-04 High density fan out package structure

Publications (3)

Publication Number Publication Date
JP2017534177A JP2017534177A (ja) 2017-11-16
JP2017534177A5 true JP2017534177A5 (enExample) 2018-09-27
JP6672285B2 JP6672285B2 (ja) 2020-03-25

Family

ID=55853498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017521532A Active JP6672285B2 (ja) 2014-10-31 2015-09-04 高密度ファンアウトパッケージ構造

Country Status (8)

Country Link
US (1) US10157823B2 (enExample)
EP (1) EP3213345B1 (enExample)
JP (1) JP6672285B2 (enExample)
KR (1) KR102440270B1 (enExample)
CN (1) CN107078119B (enExample)
BR (1) BR112017008727B1 (enExample)
SG (1) SG11201701990SA (enExample)
WO (1) WO2016069112A1 (enExample)

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US9728507B2 (en) * 2011-07-19 2017-08-08 Pfg Ip Llc Cap chip and reroute layer for stacked microelectronic module
US20170047276A1 (en) * 2015-08-13 2017-02-16 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US9761509B2 (en) 2015-12-29 2017-09-12 United Microelectronics Corp. Semiconductor device with throgh-substrate via and method for fabrication the semiconductor device
US10141198B2 (en) * 2016-07-08 2018-11-27 Dyi-chung Hu Electronic package and manufacturing method thereof
CN110024111B (zh) 2016-12-30 2024-03-19 英特尔公司 带有具有用于扇出缩放的柱和过孔连接的高密度互连层的封装衬底
US10050021B1 (en) * 2017-02-16 2018-08-14 Nanya Technology Corporation Die device, semiconductor device and method for making the same
US11699651B2 (en) 2017-10-23 2023-07-11 Applied Materials, Inc. Fan-out interconnect integration processes and structures
DE102018127448B4 (de) 2017-11-30 2023-06-22 Taiwan Semiconductor Manufacturing Co. Ltd. Metallschienenleiter für nicht-planare Halbleiter-Bauelemente
US10700207B2 (en) 2017-11-30 2020-06-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device integrating backside power grid and related integrated circuit and fabrication method
US10804254B2 (en) 2018-06-29 2020-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out package with cavity substrate
US20200212536A1 (en) * 2018-12-31 2020-07-02 Texas Instruments Incorporated Wireless communication device with antenna on package
JP7335036B2 (ja) * 2019-03-29 2023-08-29 ラピスセミコンダクタ株式会社 半導体パッケージの製造方法
KR102615198B1 (ko) 2019-10-15 2023-12-18 삼성전자주식회사 반도체 패키지
KR102765303B1 (ko) 2019-12-31 2025-02-07 삼성전자주식회사 반도체 패키지
US12166003B2 (en) * 2020-04-03 2024-12-10 Macom Technology Solutions Holdings, Inc. RF amplifier devices including top side contacts and methods of manufacturing
US11356070B2 (en) 2020-06-01 2022-06-07 Wolfspeed, Inc. RF amplifiers having shielded transmission line structures
US11302662B2 (en) * 2020-05-01 2022-04-12 Nanya Technology Corporation Semiconductor package with air gap and manufacturing method thereof
CN114743942A (zh) * 2021-01-07 2022-07-12 联华电子股份有限公司 混合式接合结构及其制作方法
US11682607B2 (en) * 2021-02-01 2023-06-20 Qualcomm Incorporated Package having a substrate comprising surface interconnects aligned with a surface of the substrate
KR20220126850A (ko) 2021-03-09 2022-09-19 삼성전자주식회사 반도체 패키지
CN117546291A (zh) * 2021-06-11 2024-02-09 株式会社村田制作所 半导体装置
TWI884561B (zh) * 2023-02-13 2025-05-21 胡迪群 半導體基板及其製造方法
US12148688B2 (en) 2023-02-13 2024-11-19 Dyi-chung Hu Semiconductor substrate and manufacturing method thereof

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JP3817463B2 (ja) * 2001-11-12 2006-09-06 新光電気工業株式会社 多層配線基板の製造方法
US6706625B1 (en) * 2002-12-06 2004-03-16 Chartered Semiconductor Manufacturing Ltd. Copper recess formation using chemical process for fabricating barrier cap for lines and vias
US6927159B2 (en) * 2003-05-27 2005-08-09 Texas Instruments Incorporated Methods for providing improved layer adhesion in a semiconductor device
TWI286372B (en) 2003-08-13 2007-09-01 Phoenix Prec Technology Corp Semiconductor package substrate with protective metal layer on pads formed thereon and method for fabricating the same
US9460951B2 (en) * 2007-12-03 2016-10-04 STATS ChipPAC Pte. Ltd. Semiconductor device and method of wafer level package integration
US8513119B2 (en) * 2008-12-10 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming bump structure having tapered sidewalls for stacked dies
US8441124B2 (en) 2010-04-29 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cu pillar bump with non-metal sidewall protection structure
US9048233B2 (en) * 2010-05-26 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package systems having interposers
US8330274B2 (en) * 2010-09-29 2012-12-11 Infineon Technologies Ag Semiconductor structure and method for making same
US20120282767A1 (en) 2011-05-05 2012-11-08 Stmicroelectronics Pte Ltd. Method for producing a two-sided fan-out wafer level package with electrically conductive interconnects, and a corresponding semiconductor package
KR101828490B1 (ko) 2011-08-30 2018-02-12 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
US8552556B1 (en) 2011-11-22 2013-10-08 Amkor Technology, Inc. Wafer level fan out package
US8716859B2 (en) * 2012-01-10 2014-05-06 Intel Mobile Communications GmbH Enhanced flip chip package
US8779559B2 (en) * 2012-02-27 2014-07-15 Qualcomm Incorporated Structure and method for strain-relieved TSV
US9385006B2 (en) * 2012-06-21 2016-07-05 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming an embedded SOP fan-out package
KR20140024674A (ko) * 2012-08-20 2014-03-03 삼성전자주식회사 관통 비아 구조체 및 재배선 구조체를 갖는 반도체 소자
US9006101B2 (en) 2012-08-31 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method
US8993380B2 (en) 2013-03-08 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for 3D IC package

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