JP2017528922A - ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム - Google Patents

ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム Download PDF

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Publication number
JP2017528922A
JP2017528922A JP2017521034A JP2017521034A JP2017528922A JP 2017528922 A JP2017528922 A JP 2017528922A JP 2017521034 A JP2017521034 A JP 2017521034A JP 2017521034 A JP2017521034 A JP 2017521034A JP 2017528922 A JP2017528922 A JP 2017528922A
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packet
light
amorphous silicon
pulse
film
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JP2017528922A5 (enExample
Inventor
ユーリ・エロキン
イゴール・サマルツェフ
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アイピージー フォトニクス コーポレーション
アイピージー フォトニクス コーポレーション
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Publication of JP2017528922A publication Critical patent/JP2017528922A/ja
Publication of JP2017528922A5 publication Critical patent/JP2017528922A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745—Tapering of the fibre, core or active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2017521034A 2014-07-03 2015-07-01 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム Pending JP2017528922A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Related Child Applications (1)

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JP2020148871A Division JP7111783B2 (ja) 2014-07-03 2020-09-04 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム

Publications (2)

Publication Number Publication Date
JP2017528922A true JP2017528922A (ja) 2017-09-28
JP2017528922A5 JP2017528922A5 (enExample) 2019-12-05

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JP2017521034A Pending JP2017528922A (ja) 2014-07-03 2015-07-01 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
JP2020148871A Active JP7111783B2 (ja) 2014-07-03 2020-09-04 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム

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Country Status (6)

Country Link
US (2) US9941120B2 (enExample)
EP (1) EP3164885B1 (enExample)
JP (2) JP2017528922A (enExample)
KR (1) KR102439093B1 (enExample)
CN (2) CN109979805B (enExample)
WO (2) WO2016004175A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3164885B1 (en) * 2014-07-03 2021-08-25 IPG Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
US20200321363A1 (en) * 2016-05-11 2020-10-08 Ipg Photonics Corporation Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display
US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
US11673208B2 (en) 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
WO2019028064A1 (en) * 2017-07-31 2019-02-07 Ipg Photonics Corporation FIBER LASER APPARATUS AND PART PROCESSING METHOD
CN111479650A (zh) * 2017-10-13 2020-07-31 纽约市哥伦比亚大学理事会 用于点束和线束结晶的系统和方法
CN108550580B (zh) * 2018-04-27 2019-10-11 武汉华星光电技术有限公司 Tft阵列基板
CN108615680B (zh) * 2018-04-28 2020-03-10 京东方科技集团股份有限公司 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法
US11467265B2 (en) * 2019-08-20 2022-10-11 Luminar, Llc Coherent pulsed lidar system
US12481034B2 (en) 2020-08-10 2025-11-25 Luminar Technologies, Inc. Lidar system with input optical element
US12228650B2 (en) 2020-08-10 2025-02-18 Luminar Technologies, Inc. Master-oscillator power-amplifier (MOPA) light source with optical isolator

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645272A (ja) * 1992-07-21 1994-02-18 Hitachi Ltd レーザアニール装置
JP2002280324A (ja) * 2001-03-16 2002-09-27 Sony Corp レーザ装置
WO2003043070A1 (fr) * 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
JP2007508694A (ja) * 2003-10-10 2007-04-05 ジーエスアイ ルモニクス コーポレイション ピコ秒レーザでのメモリリンク処理のためのレーザに基づくシステム
JP2008085316A (ja) * 2006-08-31 2008-04-10 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法、並びに半導体装置
JP2010532587A (ja) * 2007-07-05 2010-10-07 モビアス フォトニクス， インク． 誘導ビリルアン散乱を使用しないファイバｍｏｐａシステム
JP2011515588A (ja) * 2008-03-27 2011-05-19 イムラ アメリカ インコーポレイテッド 薄膜製作方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2395353B (en) * 2002-02-18 2004-10-13 Univ Southampton Pulsed light sources
JP2004063924A (ja) * 2002-07-31 2004-02-26 Mitsubishi Heavy Ind Ltd レーザアニール方法及び装置
US6925216B2 (en) * 2003-05-30 2005-08-02 The Regents Of The University Of California Direct-patterned optical waveguides on amorphous silicon films
JP5072197B2 (ja) * 2004-06-18 2012-11-14 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
KR20120096586A (ko) * 2004-10-20 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7508853B2 (en) * 2004-12-07 2009-03-24 Imra, America, Inc. Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7715459B2 (en) * 2005-11-01 2010-05-11 Cymer, Inc. Laser system
EP1974422A4 (en) * 2005-12-15 2011-12-07 Laser Abrasive Technologies Llc METHOD AND DEVICE FOR TREATING SOLID MATERIALS USING HARD FIBER
KR100740124B1 (ko) * 2006-10-13 2007-07-16 삼성에스디아이 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조방법
US8630320B2 (en) * 2007-08-31 2014-01-14 Deep Photonics Corporation Method and apparatus for a hybrid mode-locked fiber laser
US20090246530A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method For Fabricating Thin Films
US8115137B2 (en) * 2008-06-12 2012-02-14 Ihi Corporation Laser annealing method and laser annealing apparatus
US7974319B2 (en) * 2008-11-21 2011-07-05 Institut National D'optique Spectrally tailored pulsed fiber laser oscillator
US8372667B2 (en) * 2009-04-20 2013-02-12 Applied Materials, Inc. Fiber laser substrate processing
US8068705B2 (en) * 2009-09-14 2011-11-29 Gapontsev Valentin P Single-mode high-power fiber laser system
US20110133129A1 (en) * 2009-12-07 2011-06-09 Imra America, Inc. Method of tuning properties of thin films
JP5678333B2 (ja) * 2010-05-27 2015-03-04 株式会社ブイ・テクノロジー レーザアニール方法及び装置
US9316545B2 (en) 2011-07-11 2016-04-19 California Institute Of Technology Scanning measurement of Seebeck coefficient of a heated sample
US8774236B2 (en) * 2011-08-17 2014-07-08 Veralas, Inc. Ultraviolet fiber laser system
US8817827B2 (en) * 2011-08-17 2014-08-26 Veralas, Inc. Ultraviolet fiber laser system
GB2505409B (en) * 2012-08-27 2016-08-03 V-Gen Ltd Generation of narrow line width high power optical pulses
US9413137B2 (en) * 2013-03-15 2016-08-09 Nlight, Inc. Pulsed line beam device processing systems using laser diodes
US10069271B2 (en) * 2014-06-02 2018-09-04 Nlight, Inc. Scalable high power fiber laser
EP3164885B1 (en) * 2014-07-03 2021-08-25 IPG Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
US9246303B1 (en) * 2014-10-31 2016-01-26 Raytheon Company Method and apparatus for temporally concentrating pump power to support generation of high peak-power pulse bursts or other time-varying laser output waveforms

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645272A (ja) * 1992-07-21 1994-02-18 Hitachi Ltd レーザアニール装置
JP2002280324A (ja) * 2001-03-16 2002-09-27 Sony Corp レーザ装置
WO2003043070A1 (fr) * 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
JP2007508694A (ja) * 2003-10-10 2007-04-05 ジーエスアイ ルモニクス コーポレイション ピコ秒レーザでのメモリリンク処理のためのレーザに基づくシステム
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
JP2008085316A (ja) * 2006-08-31 2008-04-10 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法、並びに半導体装置
JP2010532587A (ja) * 2007-07-05 2010-10-07 モビアス フォトニクス， インク． 誘導ビリルアン散乱を使用しないファイバｍｏｐａシステム
JP2011515588A (ja) * 2008-03-27 2011-05-19 イムラ アメリカ インコーポレイテッド 薄膜製作方法

Also Published As

Publication number Publication date
EP3164885B1 (en) 2021-08-25
US20160013057A1 (en) 2016-01-14
CN109979805B (zh) 2023-02-21
WO2016004175A1 (en) 2016-01-07
KR102439093B1 (ko) 2022-08-31
US9941120B2 (en) 2018-04-10
EP3164885A1 (en) 2017-05-10
WO2016004174A1 (en) 2016-01-07
CN106663655B (zh) 2019-05-07
KR20170029537A (ko) 2017-03-15
EP3164885A4 (en) 2018-03-07
JP2020205439A (ja) 2020-12-24
CN106663655A (zh) 2017-05-10
USRE48398E1 (en) 2021-01-19
JP7111783B2 (ja) 2022-08-02
CN109979805A (zh) 2019-07-05

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