CN109979805B - 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 - Google Patents

通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 Download PDF

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CN109979805B
CN109979805B CN201910297108.4A CN201910297108A CN109979805B CN 109979805 B CN109979805 B CN 109979805B CN 201910297108 A CN201910297108 A CN 201910297108A CN 109979805 B CN109979805 B CN 109979805B
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packet
film
light
pulse
wavelength
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CN109979805A (zh
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尤里·叶罗欣
伊格尔·山马尔特瑟夫
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IPG Photonics Corp
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IPG Photonics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745—Tapering of the fibre, core or active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN201910297108.4A 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 Active CN109979805B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
CN201580036440.5A CN106663655B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

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CN109979805B true CN109979805B (zh) 2023-02-21

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CN201580036440.5A Active CN106663655B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

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US (2) US9941120B2 (enExample)
EP (1) EP3164885B1 (enExample)
JP (2) JP2017528922A (enExample)
KR (1) KR102439093B1 (enExample)
CN (2) CN109979805B (enExample)
WO (2) WO2016004175A1 (enExample)

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US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
US11673208B2 (en) 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
WO2019028064A1 (en) * 2017-07-31 2019-02-07 Ipg Photonics Corporation FIBER LASER APPARATUS AND PART PROCESSING METHOD
CN111479650A (zh) * 2017-10-13 2020-07-31 纽约市哥伦比亚大学理事会 用于点束和线束结晶的系统和方法
CN108550580B (zh) * 2018-04-27 2019-10-11 武汉华星光电技术有限公司 Tft阵列基板
CN108615680B (zh) * 2018-04-28 2020-03-10 京东方科技集团股份有限公司 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法
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Also Published As

Publication number Publication date
EP3164885B1 (en) 2021-08-25
US20160013057A1 (en) 2016-01-14
WO2016004175A1 (en) 2016-01-07
KR102439093B1 (ko) 2022-08-31
US9941120B2 (en) 2018-04-10
EP3164885A1 (en) 2017-05-10
JP2017528922A (ja) 2017-09-28
WO2016004174A1 (en) 2016-01-07
CN106663655B (zh) 2019-05-07
KR20170029537A (ko) 2017-03-15
EP3164885A4 (en) 2018-03-07
JP2020205439A (ja) 2020-12-24
CN106663655A (zh) 2017-05-10
USRE48398E1 (en) 2021-01-19
JP7111783B2 (ja) 2022-08-02
CN109979805A (zh) 2019-07-05

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