KR102439093B1 - 광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템 - Google Patents

광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템 Download PDF

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KR102439093B1
KR102439093B1 KR1020177002743A KR20177002743A KR102439093B1 KR 102439093 B1 KR102439093 B1 KR 102439093B1 KR 1020177002743 A KR1020177002743 A KR 1020177002743A KR 20177002743 A KR20177002743 A KR 20177002743A KR 102439093 B1 KR102439093 B1 KR 102439093B1
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light
film
pulse
wavelength
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KR20170029537A (ko
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유리 에로친
이고르 사마르체브
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아이피지 포토닉스 코포레이션
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    • H10P14/3816—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745—Tapering of the fibre, core or active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
    • H10P14/3411—

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Glass Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020177002743A 2014-07-03 2015-07-01 광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템 Active KR102439093B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Publications (2)

Publication Number Publication Date
KR20170029537A KR20170029537A (ko) 2017-03-15
KR102439093B1 true KR102439093B1 (ko) 2022-08-31

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US (2) US9941120B2 (enExample)
EP (1) EP3164885B1 (enExample)
JP (2) JP2017528922A (enExample)
KR (1) KR102439093B1 (enExample)
CN (2) CN109979805B (enExample)
WO (2) WO2016004174A1 (enExample)

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CN109154562A (zh) * 2016-05-11 2019-01-04 Ipg光子公司 用于测量平板显示器的光纤激光退火多晶硅薄膜的形态特性的过程和系统
US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
CN111133639B (zh) * 2017-07-31 2023-06-27 Ipg光子公司 光纤激光装置和用于加工工件的方法
US11673208B2 (en) 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
KR102622712B1 (ko) * 2017-10-13 2024-01-08 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 스팟 빔 및 라인 빔 결정화를 위한 시스템들 및 방법들
CN108550580B (zh) * 2018-04-27 2019-10-11 武汉华星光电技术有限公司 Tft阵列基板
CN108615680B (zh) * 2018-04-28 2020-03-10 京东方科技集团股份有限公司 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法
US11467265B2 (en) 2019-08-20 2022-10-11 Luminar, Llc Coherent pulsed lidar system
US20220043202A1 (en) 2020-08-10 2022-02-10 Luminar, Llc Semiconductor optical amplifier with bragg grating
US12481034B2 (en) 2020-08-10 2025-11-25 Luminar Technologies, Inc. Lidar system with input optical element

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US9941120B2 (en) 2018-04-10
WO2016004175A1 (en) 2016-01-07
EP3164885A4 (en) 2018-03-07
KR20170029537A (ko) 2017-03-15
USRE48398E1 (en) 2021-01-19
JP2017528922A (ja) 2017-09-28
EP3164885A1 (en) 2017-05-10
CN106663655A (zh) 2017-05-10
EP3164885B1 (en) 2021-08-25
JP7111783B2 (ja) 2022-08-02
WO2016004174A1 (en) 2016-01-07
CN106663655B (zh) 2019-05-07
JP2020205439A (ja) 2020-12-24
CN109979805A (zh) 2019-07-05
CN109979805B (zh) 2023-02-21
US20160013057A1 (en) 2016-01-14

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