KR102439093B1 - 광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템 - Google Patents

광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템 Download PDF

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KR102439093B1
KR102439093B1 KR1020177002743A KR20177002743A KR102439093B1 KR 102439093 B1 KR102439093 B1 KR 102439093B1 KR 1020177002743 A KR1020177002743 A KR 1020177002743A KR 20177002743 A KR20177002743 A KR 20177002743A KR 102439093 B1 KR102439093 B1 KR 102439093B1
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light
film
pulse
wavelength
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KR20170029537A (ko
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유리 에로친
이고르 사마르체브
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아이피지 포토닉스 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745—Tapering of the fibre, core or active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020177002743A 2014-07-03 2015-07-01 광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템 Active KR102439093B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

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KR20170029537A KR20170029537A (ko) 2017-03-15
KR102439093B1 true KR102439093B1 (ko) 2022-08-31

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US (2) US9941120B2 (enExample)
EP (1) EP3164885B1 (enExample)
JP (2) JP2017528922A (enExample)
KR (1) KR102439093B1 (enExample)
CN (2) CN109979805B (enExample)
WO (2) WO2016004175A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3164885B1 (en) * 2014-07-03 2021-08-25 IPG Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
US20200321363A1 (en) * 2016-05-11 2020-10-08 Ipg Photonics Corporation Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display
US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
US11673208B2 (en) 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
WO2019028064A1 (en) * 2017-07-31 2019-02-07 Ipg Photonics Corporation FIBER LASER APPARATUS AND PART PROCESSING METHOD
CN111479650A (zh) * 2017-10-13 2020-07-31 纽约市哥伦比亚大学理事会 用于点束和线束结晶的系统和方法
CN108550580B (zh) * 2018-04-27 2019-10-11 武汉华星光电技术有限公司 Tft阵列基板
CN108615680B (zh) * 2018-04-28 2020-03-10 京东方科技集团股份有限公司 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法
US11467265B2 (en) * 2019-08-20 2022-10-11 Luminar, Llc Coherent pulsed lidar system
US12481034B2 (en) 2020-08-10 2025-11-25 Luminar Technologies, Inc. Lidar system with input optical element
US12228650B2 (en) 2020-08-10 2025-02-18 Luminar Technologies, Inc. Master-oscillator power-amplifier (MOPA) light source with optical isolator

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280324A (ja) 2001-03-16 2002-09-27 Sony Corp レーザ装置
WO2003043070A1 (fr) 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
JP2007508694A (ja) 2003-10-10 2007-04-05 ジーエスアイ ルモニクス コーポレイション ピコ秒レーザでのメモリリンク処理のためのレーザに基づくシステム
JP2008085316A (ja) 2006-08-31 2008-04-10 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法、並びに半導体装置
US20090107962A1 (en) 2007-08-31 2009-04-30 Deep Photonics Corporation Method and apparatus for a hybrid mode-locked fiber laser
JP2010532587A (ja) 2007-07-05 2010-10-07 モビアス フォトニクス， インク． 誘導ビリルアン散乱を使用しないファイバｍｏｐａシステム
US20110133129A1 (en) 2009-12-07 2011-06-09 Imra America, Inc. Method of tuning properties of thin films
US20140050234A1 (en) 2011-08-17 2014-02-20 Veralas, Inc. Ultraviolet fiber laser system

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645272A (ja) * 1992-07-21 1994-02-18 Hitachi Ltd レーザアニール装置
GB2395353B (en) * 2002-02-18 2004-10-13 Univ Southampton Pulsed light sources
JP2004063924A (ja) * 2002-07-31 2004-02-26 Mitsubishi Heavy Ind Ltd レーザアニール方法及び装置
US6925216B2 (en) * 2003-05-30 2005-08-02 The Regents Of The University Of California Direct-patterned optical waveguides on amorphous silicon films
JP5072197B2 (ja) * 2004-06-18 2012-11-14 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
KR20120096586A (ko) * 2004-10-20 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7508853B2 (en) * 2004-12-07 2009-03-24 Imra, America, Inc. Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7715459B2 (en) * 2005-11-01 2010-05-11 Cymer, Inc. Laser system
EP1974422A4 (en) * 2005-12-15 2011-12-07 Laser Abrasive Technologies Llc METHOD AND DEVICE FOR TREATING SOLID MATERIALS USING HARD FIBER
KR100740124B1 (ko) * 2006-10-13 2007-07-16 삼성에스디아이 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조방법
US20090246530A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method For Fabricating Thin Films
US20090246413A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method for fabricating thin films
US8115137B2 (en) * 2008-06-12 2012-02-14 Ihi Corporation Laser annealing method and laser annealing apparatus
US7974319B2 (en) * 2008-11-21 2011-07-05 Institut National D'optique Spectrally tailored pulsed fiber laser oscillator
US8372667B2 (en) * 2009-04-20 2013-02-12 Applied Materials, Inc. Fiber laser substrate processing
US8068705B2 (en) * 2009-09-14 2011-11-29 Gapontsev Valentin P Single-mode high-power fiber laser system
JP5678333B2 (ja) * 2010-05-27 2015-03-04 株式会社ブイ・テクノロジー レーザアニール方法及び装置
US9316545B2 (en) 2011-07-11 2016-04-19 California Institute Of Technology Scanning measurement of Seebeck coefficient of a heated sample
US8774236B2 (en) * 2011-08-17 2014-07-08 Veralas, Inc. Ultraviolet fiber laser system
GB2505409B (en) * 2012-08-27 2016-08-03 V-Gen Ltd Generation of narrow line width high power optical pulses
US9413137B2 (en) * 2013-03-15 2016-08-09 Nlight, Inc. Pulsed line beam device processing systems using laser diodes
US10069271B2 (en) * 2014-06-02 2018-09-04 Nlight, Inc. Scalable high power fiber laser
EP3164885B1 (en) * 2014-07-03 2021-08-25 IPG Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
US9246303B1 (en) * 2014-10-31 2016-01-26 Raytheon Company Method and apparatus for temporally concentrating pump power to support generation of high peak-power pulse bursts or other time-varying laser output waveforms

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280324A (ja) 2001-03-16 2002-09-27 Sony Corp レーザ装置
WO2003043070A1 (fr) 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
US20070178674A1 (en) 2001-11-12 2007-08-02 Sony Corporation Laser annealing device and method for producing thin-film transistor
JP2007508694A (ja) 2003-10-10 2007-04-05 ジーエスアイ ルモニクス コーポレイション ピコ秒レーザでのメモリリンク処理のためのレーザに基づくシステム
JP2008085316A (ja) 2006-08-31 2008-04-10 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法、並びに半導体装置
JP2010532587A (ja) 2007-07-05 2010-10-07 モビアス フォトニクス， インク． 誘導ビリルアン散乱を使用しないファイバｍｏｐａシステム
US20090107962A1 (en) 2007-08-31 2009-04-30 Deep Photonics Corporation Method and apparatus for a hybrid mode-locked fiber laser
US20110133129A1 (en) 2009-12-07 2011-06-09 Imra America, Inc. Method of tuning properties of thin films
US20140050234A1 (en) 2011-08-17 2014-02-20 Veralas, Inc. Ultraviolet fiber laser system

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EP3164885B1 (en) 2021-08-25
US20160013057A1 (en) 2016-01-14
CN109979805B (zh) 2023-02-21
WO2016004175A1 (en) 2016-01-07
US9941120B2 (en) 2018-04-10
EP3164885A1 (en) 2017-05-10
JP2017528922A (ja) 2017-09-28
WO2016004174A1 (en) 2016-01-07
CN106663655B (zh) 2019-05-07
KR20170029537A (ko) 2017-03-15
EP3164885A4 (en) 2018-03-07
JP2020205439A (ja) 2020-12-24
CN106663655A (zh) 2017-05-10
USRE48398E1 (en) 2021-01-19
JP7111783B2 (ja) 2022-08-02
CN109979805A (zh) 2019-07-05

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