JP2017528922A5 - - Google Patents

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Publication number
JP2017528922A5
JP2017528922A5 JP2017521034A JP2017521034A JP2017528922A5 JP 2017528922 A5 JP2017528922 A5 JP 2017528922A5 JP 2017521034 A JP2017521034 A JP 2017521034A JP 2017521034 A JP2017521034 A JP 2017521034A JP 2017528922 A5 JP2017528922 A5 JP 2017528922A5
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JP
Japan
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light
packet
pulse
wavelength
amorphous silicon
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JP2017521034A
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English (en)
Japanese (ja)
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JP2017528922A (ja
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Priority claimed from PCT/US2015/038785 external-priority patent/WO2016004175A1/en
Publication of JP2017528922A publication Critical patent/JP2017528922A/ja
Publication of JP2017528922A5 publication Critical patent/JP2017528922A5/ja
Pending legal-status Critical Current

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JP2017521034A 2014-07-03 2015-07-01 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム Pending JP2017528922A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Related Child Applications (1)

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JP2020148871A Division JP7111783B2 (ja) 2014-07-03 2020-09-04 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム

Publications (2)

Publication Number Publication Date
JP2017528922A JP2017528922A (ja) 2017-09-28
JP2017528922A5 true JP2017528922A5 (enExample) 2019-12-05

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JP2017521034A Pending JP2017528922A (ja) 2014-07-03 2015-07-01 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
JP2020148871A Active JP7111783B2 (ja) 2014-07-03 2020-09-04 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム

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JP2020148871A Active JP7111783B2 (ja) 2014-07-03 2020-09-04 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム

Country Status (6)

Country Link
US (2) US9941120B2 (enExample)
EP (1) EP3164885B1 (enExample)
JP (2) JP2017528922A (enExample)
KR (1) KR102439093B1 (enExample)
CN (2) CN109979805B (enExample)
WO (2) WO2016004175A1 (enExample)

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US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
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