JP2017525840A5 - - Google Patents

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Publication number
JP2017525840A5
JP2017525840A5 JP2016572630A JP2016572630A JP2017525840A5 JP 2017525840 A5 JP2017525840 A5 JP 2017525840A5 JP 2016572630 A JP2016572630 A JP 2016572630A JP 2016572630 A JP2016572630 A JP 2016572630A JP 2017525840 A5 JP2017525840 A5 JP 2017525840A5
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Japan
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precursor composition
liquid precursor
film
metal
compound
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JP2016572630A
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English (en)
Japanese (ja)
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JP2017525840A (ja
JP6635950B2 (ja
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Priority claimed from PCT/KR2015/005945 external-priority patent/WO2015190871A1/en
Publication of JP2017525840A publication Critical patent/JP2017525840A/ja
Publication of JP2017525840A5 publication Critical patent/JP2017525840A5/ja
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JP2016572630A 2014-06-13 2015-06-12 液体前駆体組成物、その製造方法、及び前記組成物を利用した膜の形成方法 Active JP6635950B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2014-0072274 2014-06-13
KR20140072274 2014-06-13
PCT/KR2015/005945 WO2015190871A1 (en) 2014-06-13 2015-06-12 Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the composition

Publications (3)

Publication Number Publication Date
JP2017525840A JP2017525840A (ja) 2017-09-07
JP2017525840A5 true JP2017525840A5 (https=) 2018-07-19
JP6635950B2 JP6635950B2 (ja) 2020-01-29

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Application Number Title Priority Date Filing Date
JP2016572630A Active JP6635950B2 (ja) 2014-06-13 2015-06-12 液体前駆体組成物、その製造方法、及び前記組成物を利用した膜の形成方法

Country Status (6)

Country Link
US (2) US10014089B2 (https=)
JP (1) JP6635950B2 (https=)
KR (2) KR101936162B1 (https=)
CN (1) CN106460169B (https=)
TW (1) TWI682051B (https=)
WO (1) WO2015190871A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102487441B1 (ko) * 2014-09-14 2023-01-12 엔테그리스, 아이엔씨. 구리 및 유전체 상의 코발트 침착 선택성
TWI736631B (zh) * 2016-06-06 2021-08-21 韋恩州立大學 二氮雜二烯錯合物與胺類的反應
US11078224B2 (en) * 2017-04-07 2021-08-03 Applied Materials, Inc. Precursors for the atomic layer deposition of transition metals and methods of use
KR102103346B1 (ko) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법.
KR102123331B1 (ko) * 2018-12-19 2020-06-17 주식회사 한솔케미칼 코발트 전구체, 이의 제조방법 및 이를 이용한 박막의 제조방법
WO2022211218A1 (ko) 2021-04-02 2022-10-06 한국과학기술원 액체금속 전구체 용액, 이를 이용한 금속막 제조방법 및 이를 포함하는 전자소자

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006000823A1 (de) * 2006-01-05 2007-07-12 H. C. Starck Gmbh & Co. Kg Wolfram- und Molybdän-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
US8636845B2 (en) * 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8485738B2 (en) * 2009-07-31 2013-07-16 Hewlett-Packard Development Company, L.P. Optical fiber connector
US9255327B2 (en) * 2010-08-24 2016-02-09 Wayne State University Thermally stable volatile precursors
US9822446B2 (en) * 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
US9353437B2 (en) * 2010-11-17 2016-05-31 Up Chemical Co., Ltd. Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
US20140235054A1 (en) 2011-09-27 2014-08-21 L'Air Liquide, Société Änonyme pour I'Etude et I'Exploitation des Procédés Georges Glaude Tungsten diazabutadiene precursors, their synthesis, and their use for tungsten containing film depositions
WO2013046157A1 (en) * 2011-09-27 2013-04-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing film depositions
KR101822884B1 (ko) 2013-05-24 2018-01-29 주식회사 유피케미칼 텅스텐 화합물을 이용한 텅스텐-함유 막의 증착 방법 및 상기 텅스텐 화합물을 포함하는 텅스텐-함유 막 증착용 전구체 조성물
US9067958B2 (en) * 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US9236292B2 (en) * 2013-12-18 2016-01-12 Intel Corporation Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)

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