KR101936162B1 - 액체 전구체 조성물, 이의 제조 방법, 및 상기 조성물을 이용한 막의 형성 방법 - Google Patents

액체 전구체 조성물, 이의 제조 방법, 및 상기 조성물을 이용한 막의 형성 방법 Download PDF

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KR101936162B1
KR101936162B1 KR1020167012801A KR20167012801A KR101936162B1 KR 101936162 B1 KR101936162 B1 KR 101936162B1 KR 1020167012801 A KR1020167012801 A KR 1020167012801A KR 20167012801 A KR20167012801 A KR 20167012801A KR 101936162 B1 KR101936162 B1 KR 101936162B1
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liquid precursor
precursor composition
dad
metal compound
metal
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KR20170008715A (ko
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한원석
고원용
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주식회사 유피케미칼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C07F15/045—Nickel compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/406—Oxides of iron group metals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020167012801A 2014-06-13 2015-06-12 액체 전구체 조성물, 이의 제조 방법, 및 상기 조성물을 이용한 막의 형성 방법 Active KR101936162B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020140072274 2014-06-13
KR20140072274 2014-06-13
PCT/KR2015/005945 WO2015190871A1 (en) 2014-06-13 2015-06-12 Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the composition

Related Parent Applications (1)

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KR1020167001280A Division KR20160017094A (ko) 2014-06-13 2015-06-12 액체 전구체 조성물, 이의 제조 방법, 및 상기 조성물을 이용한 막의 형성 방법

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KR20170008715A KR20170008715A (ko) 2017-01-24
KR101936162B1 true KR101936162B1 (ko) 2019-01-08

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KR1020167001280A Withdrawn KR20160017094A (ko) 2014-06-13 2015-06-12 액체 전구체 조성물, 이의 제조 방법, 및 상기 조성물을 이용한 막의 형성 방법

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Country Status (6)

Country Link
US (2) US10014089B2 (https=)
JP (1) JP6635950B2 (https=)
KR (2) KR101936162B1 (https=)
CN (1) CN106460169B (https=)
TW (1) TWI682051B (https=)
WO (1) WO2015190871A1 (https=)

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Publication number Priority date Publication date Assignee Title
KR102487441B1 (ko) * 2014-09-14 2023-01-12 엔테그리스, 아이엔씨. 구리 및 유전체 상의 코발트 침착 선택성
TWI736631B (zh) * 2016-06-06 2021-08-21 韋恩州立大學 二氮雜二烯錯合物與胺類的反應
US11078224B2 (en) * 2017-04-07 2021-08-03 Applied Materials, Inc. Precursors for the atomic layer deposition of transition metals and methods of use
KR102103346B1 (ko) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법.
KR102123331B1 (ko) * 2018-12-19 2020-06-17 주식회사 한솔케미칼 코발트 전구체, 이의 제조방법 및 이를 이용한 박막의 제조방법
WO2022211218A1 (ko) 2021-04-02 2022-10-06 한국과학기술원 액체금속 전구체 용액, 이를 이용한 금속막 제조방법 및 이를 포함하는 전자소자

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DE102006000823A1 (de) * 2006-01-05 2007-07-12 H. C. Starck Gmbh & Co. Kg Wolfram- und Molybdän-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
US8636845B2 (en) * 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8485738B2 (en) * 2009-07-31 2013-07-16 Hewlett-Packard Development Company, L.P. Optical fiber connector
US9255327B2 (en) * 2010-08-24 2016-02-09 Wayne State University Thermally stable volatile precursors
US9822446B2 (en) * 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
US9353437B2 (en) * 2010-11-17 2016-05-31 Up Chemical Co., Ltd. Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
US20140235054A1 (en) 2011-09-27 2014-08-21 L'Air Liquide, Société Änonyme pour I'Etude et I'Exploitation des Procédés Georges Glaude Tungsten diazabutadiene precursors, their synthesis, and their use for tungsten containing film depositions
WO2013046157A1 (en) * 2011-09-27 2013-04-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing film depositions
KR101822884B1 (ko) 2013-05-24 2018-01-29 주식회사 유피케미칼 텅스텐 화합물을 이용한 텅스텐-함유 막의 증착 방법 및 상기 텅스텐 화합물을 포함하는 텅스텐-함유 막 증착용 전구체 조성물
US9067958B2 (en) * 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US9236292B2 (en) * 2013-12-18 2016-01-12 Intel Corporation Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)

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Publication number Publication date
WO2015190871A1 (en) 2015-12-17
US20180286529A1 (en) 2018-10-04
CN106460169A (zh) 2017-02-22
TWI682051B (zh) 2020-01-11
US10014089B2 (en) 2018-07-03
KR20170008715A (ko) 2017-01-24
KR20160017094A (ko) 2016-02-15
US20160314980A1 (en) 2016-10-27
CN106460169B (zh) 2019-04-23
TW201604305A (zh) 2016-02-01
JP2017525840A (ja) 2017-09-07
US10763001B2 (en) 2020-09-01
JP6635950B2 (ja) 2020-01-29

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