JP2017509796A - 有機材料用の蒸発源 - Google Patents
有機材料用の蒸発源 Download PDFInfo
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- JP2017509796A JP2017509796A JP2016558011A JP2016558011A JP2017509796A JP 2017509796 A JP2017509796 A JP 2017509796A JP 2016558011 A JP2016558011 A JP 2016558011A JP 2016558011 A JP2016558011 A JP 2016558011A JP 2017509796 A JP2017509796 A JP 2017509796A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 238
- 230000008020 evaporation Effects 0.000 title claims abstract description 229
- 239000011368 organic material Substances 0.000 title claims abstract description 85
- 238000009826 distribution Methods 0.000 claims abstract description 192
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 238000004891 communication Methods 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 37
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 227
- 238000000151 deposition Methods 0.000 description 121
- 230000008021 deposition Effects 0.000 description 110
- 238000012546 transfer Methods 0.000 description 62
- 238000004519 manufacturing process Methods 0.000 description 57
- 239000010410 layer Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 39
- 238000004140 cleaning Methods 0.000 description 25
- 238000012545 processing Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 16
- 238000012423 maintenance Methods 0.000 description 16
- 238000005538 encapsulation Methods 0.000 description 12
- 238000007689 inspection Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 238000007781 pre-processing Methods 0.000 description 6
- 238000013519 translation Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000012080 ambient air Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- -1 etc.) Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021652 non-ferrous alloy Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (15)
- 有機材料用の蒸発源であって、
前記有機材料を蒸発させるように構成されている蒸発るつぼと、
分配管の長さに沿って提供された一又は複数の排出口を有する分配管であって、前記蒸発るつぼと流体連通しており、前記一又は複数の排出口が提供される排出口側を含む、前記分配管の前記長さに直角な非円形の断面を有している分配管であって、前記断面の前記排出口側の幅が、前記断面の最大寸法の30%又はそれを下回る、分配管と
を備える蒸発源。 - 前記分配管の前記長さに直角な前記断面が、三角形の一部に対応する主要部分を有しており、特に前記分配管の前記長さに直角な前記断面が、丸みを帯びた角及び/又は切断された角を有する三角形である、請求項1に記載の蒸発源。
- 前記蒸発るつぼの加熱のために構成された第1の加熱デバイスと、
前記第1の加熱デバイスから独立して加熱されるように構成され、前記分配管を加熱するように構成されている第2の加熱デバイスと
を更に備える、請求項1又は2に記載の蒸発源。 - 前記第1の加熱デバイスが、前記蒸発るつぼの外側の電気ヒータであって、特に前記蒸発源るつぼのるつぼ壁と接触しており、及び/又は前記第2の加熱デバイスが、前記分配管の外側の電気ヒータであって、特に前記分配管の管壁と接触している、請求項3に記載の蒸発源。
- 前記分配管を取り囲み、互いに間隔が空いている、二又はそれを上回る熱シールド
を更に含む、請求項1から4の何れか一項に記載の蒸発源。 - 前記二又はそれを上回る熱シールドが、前記二又はそれを上回る熱シールドの少なくとも1つに又は少なくとも1つの上に提供された突出部又はスポットによって、互いに間隔が空いている、請求項5に記載の蒸発源。
- 前記一又は複数の排出口が、蒸発方向に沿って延びるノズルである、請求項1から6の何れか一項に記載の蒸発源。
- 前記蒸発方向が本質的に水平である、請求項7に記載の蒸発源。
- 前記一又は複数の排出口が、前記二又はそれを上回る熱シールドを通って蒸発方向に沿って延びるノズルである、請求項5又は6に記載の蒸発源。
- 前記排出口側の前記幅が、前記蒸発方向に直角である、請求項7から9の何れか一項に記載の蒸発源。
- 内部で大気圧を維持するように構成された蒸発器制御ハウジングであって、支持体によって支持され、スイッチ、バルブ、コントローラ、冷却ユニット、冷却制御ユニット、加熱制御ユニット、電源、及び測定デバイスから成る群から選択された少なくとも1つの要素を収納するように構成されるハウジング
を更に備える、請求項1から10の何れか一項に記載の蒸発源。 - 前記分配管が、チタン又は石英、特にチタンを含む、請求項1から11の何れか一項に記載の蒸発源。
- 前記分配管が、前記一又は複数の排出口を含む蒸気分配シャワーヘッドであり、特に前記蒸気分配シャワーヘッドが、前記有機材料用の線形源を提供する線形蒸気分配シャワーヘッドである、請求項1から12の何れか一項に記載の蒸発源。
- 有機材料用の蒸発源アレイであって、
請求項1から13のいずれか一項に記載の第1の蒸発源と、
請求項1から13のいずれか一項に記載の少なくとも第2の蒸発源と
を含み、
前記第1の蒸発源の一又は複数の排出口と、前記第2の蒸発源の一又は複数の排出口とが、25mm又はそれを下回る距離を有している、蒸発源アレイ。 - 前記分配管が、蒸発中に軸周囲で回転可能であり、
前記分配管用の一又は複数の支持体であって、第1のドライバと連結可能であり又は前記第1のドライバを含む支持体であって、前記第1のドライバが、前記一又は複数の支持体及び前記分配管の並進運動のために構成されている、支持体
を更に含む、請求項14に記載の蒸発源アレイ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2014/055741 WO2015139776A1 (en) | 2014-03-21 | 2014-03-21 | Evaporation source for organic material |
Publications (3)
Publication Number | Publication Date |
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JP2017509796A true JP2017509796A (ja) | 2017-04-06 |
JP2017509796A5 JP2017509796A5 (ja) | 2017-05-25 |
JP6466469B2 JP6466469B2 (ja) | 2019-02-06 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2016558011A Active JP6466469B2 (ja) | 2014-03-21 | 2014-03-21 | 有機材料用の蒸発源 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170092899A1 (ja) |
EP (1) | EP3119919A1 (ja) |
JP (1) | JP6466469B2 (ja) |
KR (1) | KR101983213B1 (ja) |
CN (1) | CN106133183B (ja) |
TW (1) | TWI653350B (ja) |
WO (1) | WO2015139776A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019518862A (ja) * | 2017-04-28 | 2019-07-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 複数の材料を基板上に堆積するための真空システムおよび方法 |
JP2020521039A (ja) * | 2018-05-04 | 2020-07-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 蒸発した材料を堆積させるための蒸発源、真空堆積システム、及び蒸発した材料を堆積させるための方法 |
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JP6937549B2 (ja) * | 2016-06-10 | 2021-09-22 | 株式会社ジャパンディスプレイ | 発光素子の製造装置 |
CN109715846B (zh) * | 2016-12-14 | 2024-07-23 | 应用材料公司 | 沉积系统 |
CN108456855B (zh) * | 2017-02-17 | 2024-09-03 | 京东方科技集团股份有限公司 | 坩埚、蒸镀准备装置、蒸镀设备及蒸镀方法 |
CN106637091B (zh) * | 2017-02-24 | 2019-08-30 | 旭科新能源股份有限公司 | 用于薄膜太阳能电池制造的高温蒸发炉 |
CN106987809A (zh) * | 2017-05-17 | 2017-07-28 | 大连交通大学 | 一种有机真空蒸发源 |
CN107299322A (zh) * | 2017-08-07 | 2017-10-27 | 旭科新能源股份有限公司 | 一种立式低温蒸发束源炉 |
US11795541B2 (en) * | 2017-11-16 | 2023-10-24 | Applied Materials, Inc. | Method of cooling a deposition source, chamber for cooling a deposition source and deposition system |
WO2019185183A1 (en) * | 2018-03-28 | 2019-10-03 | Applied Materials, Inc. | Vacuum processing apparatus and method of processing a substrate |
CN109817842B (zh) * | 2019-01-16 | 2021-10-01 | 京东方科技集团股份有限公司 | 一种真空干燥装置、显示用基板的制备方法 |
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Patent Citations (2)
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EP2204467A1 (en) * | 2008-12-23 | 2010-07-07 | Applied Materials, Inc. | Method and apparatus for depositing mixed layers |
DE102010041376A1 (de) * | 2009-09-25 | 2011-04-07 | Von Ardenne Anlagentechnik Gmbh | Verdampfereinrichtung für eine Beschichtungsanlage und Verfahren zur Koverdampfung von mindestens zwei Substanzen |
Cited By (2)
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JP2019518862A (ja) * | 2017-04-28 | 2019-07-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 複数の材料を基板上に堆積するための真空システムおよび方法 |
JP2020521039A (ja) * | 2018-05-04 | 2020-07-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 蒸発した材料を堆積させるための蒸発源、真空堆積システム、及び蒸発した材料を堆積させるための方法 |
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TWI653350B (zh) | 2019-03-11 |
KR20160135353A (ko) | 2016-11-25 |
TW201602373A (zh) | 2016-01-16 |
WO2015139776A1 (en) | 2015-09-24 |
US20170092899A1 (en) | 2017-03-30 |
KR101983213B1 (ko) | 2019-05-28 |
CN106133183A (zh) | 2016-11-16 |
EP3119919A1 (en) | 2017-01-25 |
CN106133183B (zh) | 2020-03-03 |
JP6466469B2 (ja) | 2019-02-06 |
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