JP2017508303A - マスキングされたエッジを有する支持リング - Google Patents
マスキングされたエッジを有する支持リング Download PDFInfo
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- JP2017508303A JP2017508303A JP2016561588A JP2016561588A JP2017508303A JP 2017508303 A JP2017508303 A JP 2017508303A JP 2016561588 A JP2016561588 A JP 2016561588A JP 2016561588 A JP2016561588 A JP 2016561588A JP 2017508303 A JP2017508303 A JP 2017508303A
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- 239000011248 coating agent Substances 0.000 claims abstract description 79
- 238000000576 coating method Methods 0.000 claims abstract description 79
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims 1
- 230000000873 masking effect Effects 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- -1 trimethylsilane Chemical compound 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Abstract
Description
Claims (15)
- 半導体処理のための支持リングであって、
リング状本体であって、
中央軸を同心とする内側エッジ及び外側エッジと、
第1の側面と第2の側面と
を備えたリング状本体、
前記内側エッジにおいて、前記リング状本体の第1の側面から延在している隆起した環状肩部、及び
前記第1の側面上のコーティングであって、前記肩部に当接している低下した厚さの内側領域を有するコーティング
を備える支持リング。 - 低下した厚さの前記内側領域はリング状である、請求項1に記載の支持リング。
- 前記リング状本体は石英を含む、請求項2に記載の支持リング。
- 前記コーティングはポリシリコンである、請求項3に記載の支持リング。
- 前記コーティングは、低下した厚さの前記内側領域の向こうに半径方向外向きに延在している、均一厚さの外側領域を有する、請求項4に記載の支持リング。
- 前記外側領域における前記コーティングの前記厚さは、約30ミクロンと約60ミクロンの間であり、前記内側領域における前記コーティングの前記厚さは、約1ミクロンと約30ミクロンの間である、請求項5に記載の支持リング。
- 前記外側領域及び前記内側領域との間にある、テーパー状領域であって、前記外側領域と前記テーパー状領域との間に外側テーパー境界を形成し、前記テーパー状領域と前記内側領域との間に内側テーパー境界を形成するテーパー状領域を更に備え、前記コーティングは、前記外側テーパー境界における前記均一厚さから、前記内側テーパー境界における前記低下した厚さまでテーパー状になっている、請求項5に記載の支持リング。
- 前記内側テーパー境界は前記内側エッジから第1の間隔にあり、前記外側テーパー境界は前記内側エッジから第2の距離にあり、前記第1の距離は約0.1mmと約20mmの間であり、前記第2の距離は約0.2mmと約25mmまでの間である、請求項7に記載の支持リング。
- 前記外側領域における前記コーティングの前記厚さは約30ミクロンと約60ミクロンの間であり、前記内側領域における前記コーティングの前記厚さは約1ミクロンと約30ミクロンの間である、請求項7に記載の支持リング。
- 前記内側テーパー境界は前記内側エッジから第1の距離にあり、前記外側テーパー境界は前記内側エッジから第2の距離にあり、前記第1の距離は約0.1mmと約20mmの間であり、前記第2の距離は約0.2mmと約25mmまでの間である、請求項9に記載の支持リング。
- 半導体処理のための支持リングであって、
リング状本体であって、
中央軸を同心とする内側エッジ及び外側エッジと、第1の側面と第2の側面と
を備えたリング状本体及び、
前記第1の側面上のコーティングであって、均一厚さの外部放射線遮断領域と、エッジリングを支持するように構成された低下した厚さの内側領域を有するコーティング
を備える支持リング。 - 前記内側領域は、前記外側テーパー境界において前記外部放射線遮断領域と境を接し、前記コーティングの厚さは、前記外側テーパー境界における前記均一厚さから、前記内側領域に位置づけされた内側テーパー境界における最小厚さまで半径方向内向きにテーパー状になっており、前記コーティングは前記内側テーパー境界と前記内側エッジとの間の前記最小厚さと実質的に等しい内側厚さを有する、請求項11に記載の支持リング。
- リング状本体を堆積チャンバ内でコーティングする方法であって、
中央軸を同心とする内側エッジと外側エッジ、及び第1の側面と第2の側面とを有する前記リング状本体を前記堆積チャンバに提供することと、
前記内側エッジにおいて前記第1の側面の上にマスクを配置することであって、前記マスクと前記第1の側面との間の距離は約500ミクロン未満である、配置することと、
前記第1の側面上にコーティングを形成することであって、前記マスクにより、前記マスクの下の前記第1の側面上のコーティングの厚さが低下する、形成することと
を含む方法。 - 前記マスクは、前記コーティングが前記内側エッジに近づくにつれ前記コーティングの前記厚さが低下するようにテーパー状になる、請求項13に記載の方法。
- 前記マスクと前記第1の側面との間の距離が第1の値から第2の値までテーパー状になっており、前記第1の値は約300ミクロンと約500ミクロンの間であり、前記第2の値は約10ミクロンと約200ミクロンの間である、請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361922451P | 2013-12-31 | 2013-12-31 | |
US61/922,451 | 2013-12-31 | ||
US14/218,597 US9330955B2 (en) | 2013-12-31 | 2014-03-18 | Support ring with masked edge |
US14/218,597 | 2014-03-18 | ||
PCT/US2014/067367 WO2015102781A1 (en) | 2013-12-31 | 2014-11-25 | Support ring with masked edge |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018176528A Division JP6758353B2 (ja) | 2013-12-31 | 2018-09-20 | マスキングされたエッジを有する支持リング |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017508303A true JP2017508303A (ja) | 2017-03-23 |
JP2017508303A5 JP2017508303A5 (ja) | 2018-01-18 |
JP6408606B2 JP6408606B2 (ja) | 2018-10-17 |
Family
ID=53482656
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016561588A Active JP6408606B2 (ja) | 2013-12-31 | 2014-11-25 | マスキングされたエッジを有する支持リング |
JP2018176528A Active JP6758353B2 (ja) | 2013-12-31 | 2018-09-20 | マスキングされたエッジを有する支持リング |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2018176528A Active JP6758353B2 (ja) | 2013-12-31 | 2018-09-20 | マスキングされたエッジを有する支持リング |
Country Status (6)
Country | Link |
---|---|
US (4) | US9330955B2 (ja) |
JP (2) | JP6408606B2 (ja) |
KR (3) | KR102279150B1 (ja) |
CN (2) | CN105830207B (ja) |
TW (3) | TWI594361B (ja) |
WO (1) | WO2015102781A1 (ja) |
Families Citing this family (7)
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JP6030125B2 (ja) * | 2011-05-13 | 2016-11-24 | ダウ グローバル テクノロジーズ エルエルシー | 絶縁配合物 |
US9330955B2 (en) * | 2013-12-31 | 2016-05-03 | Applied Materials, Inc. | Support ring with masked edge |
CN110249416B (zh) | 2017-04-07 | 2023-09-12 | 应用材料公司 | 在基板边缘上的等离子体密度控制 |
CN107121892B (zh) * | 2017-04-26 | 2018-12-28 | 武汉华星光电技术有限公司 | 一种基板曝边设备 |
WO2019177837A1 (en) * | 2018-03-13 | 2019-09-19 | Applied Materials, Inc | Support ring with plasma spray coating |
CN110920254B (zh) | 2018-09-19 | 2021-03-16 | 精工爱普生株式会社 | 打印头控制电路及液体喷出装置 |
US20230066087A1 (en) * | 2021-09-01 | 2023-03-02 | Applied Materials, Inc. | Quartz susceptor for accurate non-contact temperature measurement |
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US20180102274A1 (en) | 2018-04-12 |
KR20160103128A (ko) | 2016-08-31 |
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KR20220107084A (ko) | 2022-08-01 |
US20160247708A1 (en) | 2016-08-25 |
TWI578437B (zh) | 2017-04-11 |
JP6758353B2 (ja) | 2020-09-23 |
CN105830207A (zh) | 2016-08-03 |
JP2019036736A (ja) | 2019-03-07 |
TW201532183A (zh) | 2015-08-16 |
JP6408606B2 (ja) | 2018-10-17 |
US10056286B2 (en) | 2018-08-21 |
US20150187630A1 (en) | 2015-07-02 |
TW201639073A (zh) | 2016-11-01 |
CN110223949A (zh) | 2019-09-10 |
TWI667735B (zh) | 2019-08-01 |
US20180315639A1 (en) | 2018-11-01 |
KR102569159B1 (ko) | 2023-08-23 |
KR20210091360A (ko) | 2021-07-21 |
WO2015102781A1 (en) | 2015-07-09 |
CN110223949B (zh) | 2023-03-21 |
US10373859B2 (en) | 2019-08-06 |
KR102279150B1 (ko) | 2021-07-19 |
US9842759B2 (en) | 2017-12-12 |
US9330955B2 (en) | 2016-05-03 |
KR102424719B1 (ko) | 2022-07-25 |
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CN105830207B (zh) | 2019-05-31 |
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