JP2017505531A - 有機電子デバイス中にp層を形成するためのインク - Google Patents
有機電子デバイス中にp層を形成するためのインク Download PDFInfo
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- 229920000554 ionomer Polymers 0.000 claims abstract description 46
- 239000002105 nanoparticle Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 38
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 38
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 229920001577 copolymer Polymers 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000013086 organic photovoltaic Methods 0.000 claims description 5
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 5
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 4
- RRZIJNVZMJUGTK-UHFFFAOYSA-N 1,1,2-trifluoro-2-(1,2,2-trifluoroethenoxy)ethene Chemical group FC(F)=C(F)OC(F)=C(F)F RRZIJNVZMJUGTK-UHFFFAOYSA-N 0.000 claims description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 3
- 230000001476 alcoholic effect Effects 0.000 claims description 3
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 4
- 239000000976 ink Substances 0.000 description 30
- 229920000557 Nafion® Polymers 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- -1 V 2 O 5 Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
− 基板、
− 第1の電極(アノード)としての伝導性層、
− 「正孔輸送層」と呼ばれるp型半導体層、
− 電気活性層、
− 「電子輸送層」と呼ばれるn型半導体層、
− 第2の電極(カソード)としての伝導性層
で堆積される。
− 基板、
− 第1の電極(カソード)としての伝導性層、
− 「電子輸送層」と呼ばれるn型半導体層、
− 電気活性層、
− 「正孔輸送層」と呼ばれるp型半導体層、
− 第2の電極(アノード)又は上方電極
で位置決めされる。
− 支持体を用意する工程、
− 本発明によるインクを用意する工程、
− 前記支持体の表面で、インクの層の堆積を実施する工程、及び適切な場合には、p層を形成するためにこの層を乾燥させる工程、
を含む方法にも関する。
− 下記の層:基板、カソード、n型層、活性層が、この順序にある層から構成された積層体を用意する工程、
− 前記活性層上に、p型層の形成を促す条件下、本発明によるインクの層を堆積する工程、
を含む方法に関する。
− 電極(アノード)でコーティングされた基板を用意する工程
− 前記アノード上に、p型層の形成を促す条件下、本発明によるインクの層を堆積する工程
を含む、標準構造の有機電子デバイスを形成するための方法に関する。
インクの配合
インクを、Nanograde Llcにより流通されたWO3ナノ粒子の商用分散体(2.5質量%、界面活性剤なし、2−プロパノールベース、粒径10〜20nm、結晶質構造:三斜晶系)、及びNafion(登録商標)(約5%固形分を有するNafion(登録商標)117溶液、Sigma−Aldrich製)の商用配合物から調製する。
p層を形成するための実施例1によるインクの使用
考慮される有機電子デバイスは、下記の構造
デバイスの性能及び安定性
実施例2からのNIP(逆)型のデバイスの性能を、標準照明条件下(1000W/m2、AM 1.5G)、不活性雰囲気中で、25℃で測定する。
Voc:開路電圧、
Jsc:短絡電流密度、
FF:フィルファクタ、
PCE:電力変換効率。
− 性能1:考慮されるデバイスの初期性能、
− 性能2:光が存在しない状態で、空気に2時間曝露した後の、考慮されるデバイスの性能、及び
− 性能3:グローブボックス内で、150℃で2時間の熱処理後、考慮されるデバイスの性能。
WO3と組み合わせたNafion(登録商標)の濃度範囲
更に、デバイスの初期性能を、乾燥層内のNafion(登録商標)/WO3の質量比の関数として評価する。
Claims (15)
- 有機電子デバイス中にp型層を形成するのに適切なインクであって、V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択されるp型半導体金属酸化物の少なくとも多少のナノ粒子と、イオノマーとを含み、前記イオノマーがパーフルオロスルホン化コポリマーであり、
前記イオノマーと、V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択される前記p型半導体金属酸化物のナノ粒子との質量比が0.005から0.115の間であることを特徴とする、インク。 - 前記イオノマーと前記p型半導体金属酸化物のナノ粒子との質量比が、0.01から0.055の間である、請求項1に記載のインク。
- 前記p型半導体金属酸化物のナノ粒子が、完全に又は部分的にWO3で形成される、請求項1又は2に記載のインク。
- 前記イオノマーが、スルホン化テトラフルオロエチレンコポリマーであり、より詳細には、パーフルオロビニルエーテル基を含むテトラフルオロエチレン主鎖を有し且つその末端がスルホネート基又はスルホン酸官能基によって官能化されたコポリマーである、請求項1から3のいずれか一項に記載のインク。
- アルコール性溶媒、詳細には低級アルコール、好ましくはC2〜C4低級モノアルコール、詳細にはエタノール、n−プロパノール、イソプロパノール、n−ブタノール、2−ブタノール、又はメチルプロパノールを更に含む、請求項1から4のいずれか一項に記載のインク。
- 有機溶媒と、V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択されるp型半導体金属酸化物の少なくとも多少のナノ粒子と、パーフルオロスルホン化コポリマーである少なくとも1種のイオノマーとからなり、前記イオノマーと、V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択される前記p型半導体金属酸化物のナノ粒子との質量比が0.005から0.115の間であることを特徴とする、請求項1から5のいずれか一項に記載のインク。
- 有機電子デバイスのp型層であって、
V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択されるp型半導体金属酸化物の少なくとも多少のナノ粒子と、イオノマーとを含み、前記イオノマーがパーフルオロスルホン化コポリマーであり、
前記イオノマーと、V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択されるp型半導体金属酸化物のナノ粒子との質量比が0.005から0.115の間であり、好ましくは0.01から0.055の間であることを特徴とする、層。 - 前記p型半導体金属酸化物のナノ粒子が、完全に又は部分的にWO3で形成される、請求項7に記載の層。
- 前記イオノマーが、スルホン化テトラフルオロエチレンコポリマーであり、より詳細には、パーフルオロビニルエーテル基を含むテトラフルオロエチレン主鎖を有し且つその末端がスルホネート基又はスルホン酸官能基によって官能化されたコポリマーである、請求項7又は8に記載の層。
- V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択されるp型半導体金属酸化物の少なくとも多少のナノ粒子と、パーフルオロスルホン化コポリマーである少なくとも1種のイオノマーとからなり、前記イオノマーと、V2O5、NiO、MoO3、WO3、及びこれらの混合物から選択されるp型半導体金属酸化物のナノ粒子との質量比が0.005から0.115の間であることを特徴とする、請求項7から9のいずれか一項に記載の層。
- 請求項7から10のいずれか一項に記載のp型層を含むことを特徴とする、有機電子デバイス。
- 標準構造又は逆構造を有することを特徴とする、請求項11に記載の有機電子デバイス。
- 有機光起電力セル、有機発光ダイオード(OLED)、又は有機光検出器(OPD)であることを特徴とする、請求項11又は12に記載の有機電子デバイス。
- p型層の形成を促す条件下、請求項1から6のいずれか一項に記載のインクの層を堆積する工程を含むことを特徴とする、有機電子デバイスを形成するための方法。
- 有機電子デバイス中にp型層を形成するための、WO3ナノ粒子の使用であって、前記ナノ粒子が、前記p型層内で、パーフルオロスルホン化コポリマーである少なくとも1種のイオノマーと、0.005から0.115のイオノマー/WO3ナノ粒子の質量比で配合されることを特徴とする使用。
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FR3089969B1 (fr) * | 2018-12-13 | 2023-02-24 | Genesink | Méthode de synthèse de nanoparticules d’oxyde de tungstène |
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CN110350091A (zh) * | 2019-07-02 | 2019-10-18 | 上海大学 | 有机光电探测器及其制备方法 |
US11777059B2 (en) | 2019-11-20 | 2023-10-03 | Lumileds Llc | Pixelated light-emitting diode for self-aligned photoresist patterning |
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US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
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US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
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