WO2015079378A1 - Encre pour former des couches p dans des dispositifs electroniques organiques - Google Patents
Encre pour former des couches p dans des dispositifs electroniques organiques Download PDFInfo
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- WO2015079378A1 WO2015079378A1 PCT/IB2014/066313 IB2014066313W WO2015079378A1 WO 2015079378 A1 WO2015079378 A1 WO 2015079378A1 IB 2014066313 W IB2014066313 W IB 2014066313W WO 2015079378 A1 WO2015079378 A1 WO 2015079378A1
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- Prior art keywords
- ionomer
- nanoparticles
- type
- layer
- metal oxide
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- 150000004706 metal oxides Chemical class 0.000 claims abstract description 63
- 229920000554 ionomer Polymers 0.000 claims abstract description 49
- 239000002105 nanoparticle Substances 0.000 claims abstract description 46
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 229920001577 copolymer Polymers 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 6
- 238000013086 organic photovoltaic Methods 0.000 claims description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 4
- RRZIJNVZMJUGTK-UHFFFAOYSA-N 1,1,2-trifluoro-2-(1,2,2-trifluoroethenoxy)ethene Chemical group FC(F)=C(F)OC(F)=C(F)F RRZIJNVZMJUGTK-UHFFFAOYSA-N 0.000 claims description 3
- 230000001476 alcoholic effect Effects 0.000 claims description 3
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical group OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims 1
- 150000003460 sulfonic acids Chemical class 0.000 claims 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 4
- 229920000557 Nafion® Polymers 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 238000009472 formulation Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical group N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical group 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 for example Chemical class 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/106—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/122—Ionic conductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to the field of organic electronic devices such as organic photovoltaic cells, organic light-emitting diodes (OLEDs) and organic photodetectors (OPDs).
- organic electronic devices such as organic photovoltaic cells, organic light-emitting diodes (OLEDs) and organic photodetectors (OPDs).
- These devices consist of a first and a second electrode, respectively disposed above and below a stack of several layers including in particular a so-called “active” layer adjacent to a so-called “P-type” layer and a "N-type” layer.
- the object of the invention is to provide an improved P-type layer, and in this respect advantageous for accessing organic electronic devices, whose thermal and air stability is improved and which has high performances.
- Organic electronic devices and in particular organic photovoltaic cells, are generally classified according to the structure of their architecture: standard or inverse.
- the layers are deposited in the following order:
- conductive layer as a second electrode (cathode).
- the stack is inverted and the layers are arranged in the following sequence:
- first electrode cathode
- an N-type semiconductor layer called an "electron transport layer"
- the P-type semiconductor layers are formed essentially from a mixture of two polymers, the poly (3,4-ethylenedioxythiophene) (PEDOT) and sodium poly (styrene sulfonate) (PSS) called PEDOT: PSS. As such, these layers have the property of being hydrophilic.
- PEDOT poly (3,4-ethylenedioxythiophene)
- PSS sodium poly (styrene sulfonate)
- This material has many advantages in terms of conductivity, transparency, stability including photochemical and oxidation.
- the electrically active layers consist of a mixture containing at least two semiconductor materials: an N-type material, an electron acceptor, and a P-type material, which is a donor. electrons (hole transporter). These active layers are therefore generally hydrophobic.
- PEDOT PSS is obtained from a complex formulation of two polymers and several solvents and additives, is not conducive to adjustments. It is indeed difficult to intervene at the level of the formulation without fear of destabilizing it.
- P-type semiconducting metal oxides such as, for example, V 2 O 5 , O, M0O 3 and WO 3 , in the form of nanoparticles, may constitute an alternative to the use of PEDOT: PSS.
- These metal oxides are also generally very transparent, and may have good wettability and strong adhesion to the active layer. In addition, their reduced conductivity can be perfectly compensated by reducing the thickness of the final layer.
- the present invention precisely aims to meet this need.
- the object of the invention is to propose an improved solution for producing a P layer and more generally for producing organic electronic devices and consequently improved modules in terms of stability, performance and service life.
- Another object of the invention is to propose a method for preparing an organic electronic device, in which the implementation of the P-type layer is facilitated in particular with respect to that of the P-type PEDOT: PSS layers.
- the main subject of the present invention is an ink, capable of forming a P-type layer in an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconducting P-type selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof and an ionomer said ionomer being a perfluorosulfonated copolymer, the mass ratio between the ionomer and the nanoparticles of metal oxide (s) P-type semiconductors ranging from 0.005 to 0.115.
- the weight ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.01 and 0.055.
- the nanoparticles of P-type semiconducting metal oxide (s) are formed wholly or partly of WO 3.
- the present invention relates to a P type layer of an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconducting type P selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof and an ionomer which is a perfluorosulphonated copolymer, the mass ratio between the ionomer and the nanoparticles of the metal oxide (s) semiconductors of type P being between 0.005 and 0, 115.
- metal oxide (s) semiconducting type P selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof and an ionomer which is a perfluorosulphonated copolymer, the mass ratio between the ionomer and the nanoparticles of the metal oxide (s) semiconductors of type P being between 0.005 and 0, 115.
- the present invention is an organic electronic device comprising a P-type layer as defined above.
- the present invention relates to the use of nanoparticles of WO 3 to form a P-type layer in an organic electronic device, characterized in that said nanoparticles are formulated with at least one ionomer, preferably said ionomer being a perfluorosulfonated copolymer, in said P-type layer in an ionomer / nanoparticle mass ratio of WO 3 between 0.005 and 0.115.
- ionomer preferably ionomer being a perfluorosulfonated copolymer
- the other expected properties namely uniformity and homogeneity of the layer P on the active layer, and performance in OPV cells, are furthermore unaltered by such a combination.
- the organic electronic device may be an organic photovoltaic cell, an organic light-emitting diode (OLED) or an organic photodetector (OPD), in standard or inverse structure (NIP).
- OLED organic light-emitting diode
- OPD organic photodetector
- the ink according to the invention comprises at least nanoparticles of P-type semiconductor metal oxide (s) and an ionomer.
- the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.005 and 0.115.
- the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.01 and 0.055.
- the nanoparticles of P-type semiconductive metal oxide (s) are advantageously chosen from the following metal oxides: V 2 O 5 , O, M0O 3 , WO 3 and mixtures thereof.
- the P-type semiconductor metal oxide nanoparticles are formed wholly or in part of WO 3 .
- the nanoparticles of metal oxide (s) semiconducting type P can be in the form of hydrates.
- the amount of P-type semiconducting metal oxide nanoparticles ranges from 90% to 99.5%, preferably from 95% to 99% by weight, relative to the total weight of the P-type semiconducting metal oxide (s).
- the term "ionomer” means a synthetic polymer, homopolymer or copolymer, comprising ionic or ionizable groups such as carboxylate, sulphonate or phosphonate functions. It can also be called “ionic polymer”.
- the ionomer used according to the invention is not an electrically conductive polymer.
- the ionomer used according to the invention is advantageously a perfluorosulfonated copolymer, and in particular a sulfonated tetrafluoroethylene copolymer.
- the ionomer is a tetrafluoroethylene backbone copolymer comprising perfluorovinyl ether groups and whose terminal ends are functionalized with sulphonate groups or sulphonic acid functional groups.
- the ionomer used in the invention is Nafion ® marketed by Dupont.
- the amount of ionomer (s) ranges from 0.5% to 10%, preferably from 1% to 5% by weight, relative to the total weight of the nanoparticles of semi-metallic oxide (s). P-type conductors and ionomer (s).
- an ink according to the invention may comprise from 0.5% to 20% by weight of dry matter relative to the total weight of the ink.
- dry material is understood to mean the constituents of the ink with the exception of the solvent, that is to say essentially the nanoparticles of P-type semiconducting metal oxide (s) and the ionomer.
- An ink according to the invention may further comprise an alcoholic solvent, in particular a lower alcohol, preferably a C 2 -C 4 lower monoalcohol and in particular ethanol, n-propanol, isopropanol, n-propanol and the like. butanol, 2-butanol or methylpropanol.
- an ink according to the invention may comprise from 80% to 99.5% by weight of alcoholic solvent relative to the total weight of the ink.
- the ink is usually formulated without surfactant.
- these post-treatments can be performed such treatments capable of homogenizing the mixture or to sediment the secondary particles. More specifically, these treatments may consist of agitation or centrifugation.
- the ink according to the invention consists of an organic solvent, at least nanoparticles of P-type semiconducting metal oxide (s) chosen from V 2 O 5 , NiO , M0O 3 , WO 3 and mixtures thereof and at least one ionomer which is a perfluorosulphonated copolymer, the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles chosen from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof ranging from 0.005 to 0.115.
- P-type semiconducting metal oxide s
- the ink thus formed is useful for constituting the P layer of an organic electronic device.
- the present invention relates to a P-type layer of an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconductor semiconductors. type P and an ionomer, the mass ratio between the ionomer and the nanoparticles of metal oxide (s) semiconductor P type is between 0.005 and 0.115, and preferably between 0.01 and 0.055.
- the layer according to the invention consists of at least P-type semiconductor metal oxide nanoparticles selected from V 2 O 5 , NiO, M0O 3 , WO 3 and their mixtures and at least one ionomer which is a perfluorosulfonated copolymer, the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof ranging from 0.005 to 0.115.
- the layer P may be formed by depositing the ink layer on the surface of the substrate under consideration by any wet process such as solution coating, dipping, inkjet printing, spin coating, dip coating, roller coating, spray coating.
- the deposit will be implemented by spin-coating, by strip casting, for example by scraping ("doctor bleading" in English), soaking, by spin coating, slot dye, spray jet. ink, by gravure or by screen printing.
- the thickness of the layer can be controlled during the deposition. Indeed, the constituents of the expected layer P being dissolved in a liquid, the fluid layer can be spread on the support in a thin film.
- a drying step is advantageously carried out.
- the solvent (s) of the ink can be easily evaporated during this drying step.
- This step is in particular carried out at a temperature ranging from 80 ° C. to 140 ° C. for a period ranging from 1 minute to 30 minutes.
- the thickness of the layer P according to the invention varies from 0.01 microns to approximately 50 microns.
- the thickness of the layer P is less than 20 microns, preferably less than 5 microns, and preferably less than 1 micron.
- the thickness of the layer P is between 0.05 microns and 0.1 microns.
- the invention also relates to a method of forming a P-type layer in an organic electronic device comprising the following steps:
- the support is respectively an anode electrode or an active layer.
- the deposition of the ink on the support can be carried out by any suitable wet process.
- the ink deposit is then dried or allowed to dry.
- the present invention also relates to an organic electronic device, characterized in that it comprises a P-type layer as defined above.
- An organic electronic device has a standard structure or a reverse structure.
- it may be an organic photovoltaic cell, an organic light-emitting diode (OLED) or an organic photodetector (OPD).
- OLED organic light-emitting diode
- OPD organic photodetector
- the invention also relates to a method of forming an organic electronic device, characterized in that it comprises a step of depositing an ink layer as defined above under conditions conducive to the formation of a layer of the type P.
- the present invention relates to a method of forming an organic electronic device in reverse structure comprising the following steps:
- - Have a stack composed of the following layers in this order: substrate, cathode, N-type layer, active layer;
- an ink layer according to the invention depositing on said active layer, an ink layer according to the invention under conditions conducive to the formation of a P-type layer.
- an anode and preferably a silver electrode.
- the present invention relates to a method of forming an organic electronic device in standard structure comprising the following steps:
- an ink layer according to the invention depositing on said anode, an ink layer according to the invention under conditions conducive to the formation of a P-type layer.
- Example 1 Formulation of an ink
- An ink is prepared from a commercial dispersion of WO 3 nanoparticles (2.5% by weight, without surfactant, 2-propanol base, particle size 10-20 nm, crystalline structure: triclinic) distributed by the Nanograde Company. Lie and a commercial formulation of Nafion ® (solution of Nafion ® 117 at ⁇ 5% dry matter, marketed by Sigma-Aldrich).
- the ink thus formed comprises 96.5 wt% isopropanol, 1% by weight of n-propanol, 2.45% by weight of W0 3 and 0.1% by mass Nafion ®.
- Example 2 Use of the Ink According to Example 1 to Form a P-Coat
- the organic electronic device under consideration is a NIP device (reverse) structure as follows:
- N layer is a zinc oxide (ZnO) layer and its active layer is a polymeric [6,6] -phenyl-C6i-methyl butyrate (PCBM) layer.
- ZnO zinc oxide
- PCBM polymeric [6,6] -phenyl-C6i-methyl butyrate
- Example 1 dedicated to forming the layer P, at the surface of the active layer of the stack, is applied by spin coating, spin coating and dried at a temperature of 120 ° C for 2 minutes.
- the thus formed p-layer contains 4% by weight of Nafion ® and 96% by weight of WO 3.
- the silver electrode is then formed on its surface.
- the active surface of the devices is 0.28 cm 2 .
- a NIP device (reverse) of the same structure, but control, is formed with a layer P comprising only WO 3 .
- ink used to form this layer P comprises 97.5% by weight of isopropanol, and 2.5% by weight of WO 3 .
- the corresponding layer P then contains 100% by weight of W0 3 .
- the performance of the PIN type devices (inverse) of Example 2 are measured at 25 ° C under an inert atmosphere in illumination standard conditions (1000 W / m 2, AM 1.5G).
- Jsc short circuit current density
- Table 1 shows the performance of the device with a P layer according to the invention.
- Table 2 reports the performance of the control device.
- Performance 2 performance of the device considered after exposure to air for 2 hours, in the absence of light
- Performance 3 performance of the device under consideration after heat treatment for 2 minutes at 150 ° C. in a glove box.
- the beneficial effect of Nafion ® appears clearly after exposure to air for 2 hours, in the absence of light, since the efficiency of the cells does not decrease.
- the initial performance of the devices are evaluated based on the mass ratio Nafion ® / W0 3 in the dry layer.
- test parameters are identical to those of example 3.
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- Chemical & Material Sciences (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167016890A KR20160090858A (ko) | 2013-11-26 | 2014-11-25 | 유기 전자 소자 안의 p 층 형성용 잉크 |
JP2016534160A JP2017505531A (ja) | 2013-11-26 | 2014-11-25 | 有機電子デバイス中にp層を形成するためのインク |
US15/039,158 US10174216B2 (en) | 2013-11-26 | 2014-11-25 | Ink for forming P layers in organic electronic devices |
EP14812650.1A EP3074471A1 (fr) | 2013-11-26 | 2014-11-25 | Encre pour former des couches p dans des dispositifs electroniques organiques |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1361621 | 2013-11-26 | ||
FR1361621A FR3013719B1 (fr) | 2013-11-26 | 2013-11-26 | Encre pour former des couches p dans des dispositifs electroniques organiques |
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WO2015079378A1 true WO2015079378A1 (fr) | 2015-06-04 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/IB2014/066313 WO2015079378A1 (fr) | 2013-11-26 | 2014-11-25 | Encre pour former des couches p dans des dispositifs electroniques organiques |
Country Status (6)
Country | Link |
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US (1) | US10174216B2 (fr) |
EP (1) | EP3074471A1 (fr) |
JP (1) | JP2017505531A (fr) |
KR (1) | KR20160090858A (fr) |
FR (1) | FR3013719B1 (fr) |
WO (1) | WO2015079378A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109749507A (zh) * | 2019-01-23 | 2019-05-14 | 纳晶科技股份有限公司 | 功能层墨水、光电器件功能层的制备方法及光电器件 |
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---|---|---|---|---|
US11961875B2 (en) | 2017-12-20 | 2024-04-16 | Lumileds Llc | Monolithic segmented LED array architecture with islanded epitaxial growth |
ES2722475B2 (es) * | 2018-02-09 | 2020-03-25 | Torrecid Sa | Juego de tintas para obtener dispositivos hibridos electroluminiscentes |
US11201265B2 (en) | 2018-09-27 | 2021-12-14 | Lumileds Llc | Micro light emitting devices |
FR3089969B1 (fr) * | 2018-12-13 | 2023-02-24 | Genesink | Méthode de synthèse de nanoparticules d’oxyde de tungstène |
CN110350091A (zh) * | 2019-07-02 | 2019-10-18 | 上海大学 | 有机光电探测器及其制备方法 |
US11777059B2 (en) | 2019-11-20 | 2023-10-03 | Lumileds Llc | Pixelated light-emitting diode for self-aligned photoresist patterning |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
US11935987B2 (en) | 2021-11-03 | 2024-03-19 | Lumileds Llc | Light emitting diode arrays with a light-emitting pixel area |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003331869A (ja) * | 2002-05-14 | 2003-11-21 | Hitachi Ltd | プロトン伝導性材料 |
JP2004095263A (ja) * | 2002-08-30 | 2004-03-25 | Mitsubishi Heavy Ind Ltd | 燃料電池用電極触媒、燃料電池および燃料電池システム |
WO2009018009A1 (fr) * | 2007-07-27 | 2009-02-05 | E. I. Du Pont De Nemours And Company | Dispersions aqueuses de polymères électriquement conducteurs contenant des nanoparticules minérales |
US20090061276A1 (en) * | 2007-08-31 | 2009-03-05 | Kabushiki Kaisha Toshiba | Anode for fuel cell and fuel cell using the same |
EP2631008A1 (fr) * | 2012-02-22 | 2013-08-28 | nanograde AG | Couches de tampon d'oxyde de tungstène pouvant être traitées par des solutions et dispositifs électroniques les comportant |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3937113B2 (ja) * | 1998-06-05 | 2007-06-27 | 日産化学工業株式会社 | 有機−無機複合導電性ゾル及びその製造法 |
US7390438B2 (en) * | 2003-04-22 | 2008-06-24 | E.I. Du Pont De Nemours And Company | Water dispersible substituted polydioxythiophenes made with fluorinated polymeric sulfonic acid colloids |
WO2007094019A1 (fr) * | 2006-02-17 | 2007-08-23 | Nm Tech Ltd. Nanomaterials And Microdevices Technology | Procede de fabrication de films nanocristallins transparents d'oxyde de tungstene |
JP2007336790A (ja) * | 2006-06-19 | 2007-12-27 | Kuraray Co Ltd | 高分子電気化学素子 |
JP2010118214A (ja) * | 2008-11-12 | 2010-05-27 | Toyota Motor Corp | 燃料電池 |
GB2475247B (en) * | 2009-11-10 | 2012-06-13 | Cambridge Display Tech Ltd | Organic optoelectronic device and method |
JP2013127865A (ja) * | 2011-12-16 | 2013-06-27 | Toyota Motor Corp | 燃料電池用電極触媒、電極触媒に用いられるアイオノマーの製造方法、膜電極接合体の製造方法、膜電極接合体、および燃料電池 |
JP5870722B2 (ja) * | 2012-02-02 | 2016-03-01 | コニカミノルタ株式会社 | 有機光電変換素子、および太陽電池 |
JP6094572B2 (ja) * | 2012-03-12 | 2017-03-15 | 三菱化学株式会社 | 有機薄膜太陽電池モジュールの製造方法、及び有機薄膜太陽電池モジュール |
WO2014017535A1 (fr) * | 2012-07-27 | 2014-01-30 | 株式会社ダイセル | Composition de couche de conversion photoélectrique et élément de conversion photoélectrique |
-
2013
- 2013-11-26 FR FR1361621A patent/FR3013719B1/fr active Active
-
2014
- 2014-11-25 JP JP2016534160A patent/JP2017505531A/ja active Pending
- 2014-11-25 US US15/039,158 patent/US10174216B2/en not_active Expired - Fee Related
- 2014-11-25 WO PCT/IB2014/066313 patent/WO2015079378A1/fr active Application Filing
- 2014-11-25 EP EP14812650.1A patent/EP3074471A1/fr not_active Withdrawn
- 2014-11-25 KR KR1020167016890A patent/KR20160090858A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003331869A (ja) * | 2002-05-14 | 2003-11-21 | Hitachi Ltd | プロトン伝導性材料 |
JP2004095263A (ja) * | 2002-08-30 | 2004-03-25 | Mitsubishi Heavy Ind Ltd | 燃料電池用電極触媒、燃料電池および燃料電池システム |
WO2009018009A1 (fr) * | 2007-07-27 | 2009-02-05 | E. I. Du Pont De Nemours And Company | Dispersions aqueuses de polymères électriquement conducteurs contenant des nanoparticules minérales |
US20090061276A1 (en) * | 2007-08-31 | 2009-03-05 | Kabushiki Kaisha Toshiba | Anode for fuel cell and fuel cell using the same |
EP2631008A1 (fr) * | 2012-02-22 | 2013-08-28 | nanograde AG | Couches de tampon d'oxyde de tungstène pouvant être traitées par des solutions et dispositifs électroniques les comportant |
Non-Patent Citations (2)
Title |
---|
JENS MEYER ET AL: "Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications", ADVANCED MATERIALS, vol. 24, no. 40, 23 October 2012 (2012-10-23), pages 5408 - 5427, XP055115934, ISSN: 0935-9648, DOI: 10.1002/adma.201201630 * |
PERRIER ET AL., SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 101, June 2012 (2012-06-01), pages 210 - 216 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109749507A (zh) * | 2019-01-23 | 2019-05-14 | 纳晶科技股份有限公司 | 功能层墨水、光电器件功能层的制备方法及光电器件 |
CN109749507B (zh) * | 2019-01-23 | 2021-11-19 | 纳晶科技股份有限公司 | 功能层墨水、光电器件功能层的制备方法及光电器件 |
Also Published As
Publication number | Publication date |
---|---|
US20170137645A1 (en) | 2017-05-18 |
US10174216B2 (en) | 2019-01-08 |
KR20160090858A (ko) | 2016-08-01 |
FR3013719A1 (fr) | 2015-05-29 |
EP3074471A1 (fr) | 2016-10-05 |
FR3013719B1 (fr) | 2018-01-12 |
JP2017505531A (ja) | 2017-02-16 |
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