Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/02—Printing inks
  • C09D11/10—Printing inks based on artificial resins
  • C09D11/106—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/52—Electrically conductive inks
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/02—Printing inks
  • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/02—Printing inks
  • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
  • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/02—Printing inks
  • C09D11/10—Printing inks based on artificial resins
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/30—Inkjet printing inks
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
  • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
  • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
  • H01B1/122—Ionic conductors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
  • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
  • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
  • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/10—Organic polymers or oligomers
  • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/10—Organic polymers or oligomers
  • H10K85/151—Copolymers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
  • H10K85/211—Fullerenes, e.g. C60
  • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02587—Structure
  • H01L21/0259—Microstructure
  • H01L21/02601—Nanoparticles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02623—Liquid deposition
  • H01L21/02628—Liquid deposition using solutions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• the present invention relates to the field of organic electronic devices such as organic photovoltaic cells, organic light-emitting diodes (OLEDs) and organic photodetectors (OPDs).
• organic electronic devices such as organic photovoltaic cells, organic light-emitting diodes (OLEDs) and organic photodetectors (OPDs).
• These devices consist of a first and a second electrode, respectively disposed above and below a stack of several layers including in particular a so-called “active” layer adjacent to a so-called “P-type” layer and a "N-type” layer.
• the object of the invention is to provide an improved P-type layer, and in this respect advantageous for accessing organic electronic devices, whose thermal and air stability is improved and which has high performances.
• Organic electronic devices and in particular organic photovoltaic cells, are generally classified according to the structure of their architecture: standard or inverse.
• the layers are deposited in the following order:
• conductive layer as a second electrode (cathode).
• the stack is inverted and the layers are arranged in the following sequence:
• first electrode cathode
• an N-type semiconductor layer called an "electron transport layer"
• the P-type semiconductor layers are formed essentially from a mixture of two polymers, the poly (3,4-ethylenedioxythiophene) (PEDOT) and sodium poly (styrene sulfonate) (PSS) called PEDOT: PSS. As such, these layers have the property of being hydrophilic.
• PEDOT poly (3,4-ethylenedioxythiophene)
• PSS sodium poly (styrene sulfonate)
• This material has many advantages in terms of conductivity, transparency, stability including photochemical and oxidation.
• the electrically active layers consist of a mixture containing at least two semiconductor materials: an N-type material, an electron acceptor, and a P-type material, which is a donor. electrons (hole transporter). These active layers are therefore generally hydrophobic.
• PEDOT PSS is obtained from a complex formulation of two polymers and several solvents and additives, is not conducive to adjustments. It is indeed difficult to intervene at the level of the formulation without fear of destabilizing it.
• P-type semiconducting metal oxides such as, for example, V 2 O 5 , O, M0O 3 and WO 3 , in the form of nanoparticles, may constitute an alternative to the use of PEDOT: PSS.
• These metal oxides are also generally very transparent, and may have good wettability and strong adhesion to the active layer. In addition, their reduced conductivity can be perfectly compensated by reducing the thickness of the final layer.
• the present invention precisely aims to meet this need.
• the object of the invention is to propose an improved solution for producing a P layer and more generally for producing organic electronic devices and consequently improved modules in terms of stability, performance and service life.
• Another object of the invention is to propose a method for preparing an organic electronic device, in which the implementation of the P-type layer is facilitated in particular with respect to that of the P-type PEDOT: PSS layers.
• the main subject of the present invention is an ink, capable of forming a P-type layer in an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconducting P-type selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof and an ionomer said ionomer being a perfluorosulfonated copolymer, the mass ratio between the ionomer and the nanoparticles of metal oxide (s) P-type semiconductors ranging from 0.005 to 0.115.
• the weight ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.01 and 0.055.
• the nanoparticles of P-type semiconducting metal oxide (s) are formed wholly or partly of WO 3.
• the present invention relates to a P type layer of an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconducting type P selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof and an ionomer which is a perfluorosulphonated copolymer, the mass ratio between the ionomer and the nanoparticles of the metal oxide (s) semiconductors of type P being between 0.005 and 0, 115.
• metal oxide (s) semiconducting type P selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof and an ionomer which is a perfluorosulphonated copolymer, the mass ratio between the ionomer and the nanoparticles of the metal oxide (s) semiconductors of type P being between 0.005 and 0, 115.
• the present invention is an organic electronic device comprising a P-type layer as defined above.
• the present invention relates to the use of nanoparticles of WO 3 to form a P-type layer in an organic electronic device, characterized in that said nanoparticles are formulated with at least one ionomer, preferably said ionomer being a perfluorosulfonated copolymer, in said P-type layer in an ionomer / nanoparticle mass ratio of WO 3 between 0.005 and 0.115.
• ionomer preferably ionomer being a perfluorosulfonated copolymer
• the other expected properties namely uniformity and homogeneity of the layer P on the active layer, and performance in OPV cells, are furthermore unaltered by such a combination.
• the organic electronic device may be an organic photovoltaic cell, an organic light-emitting diode (OLED) or an organic photodetector (OPD), in standard or inverse structure (NIP).
• OLED organic light-emitting diode
• OPD organic photodetector
• the ink according to the invention comprises at least nanoparticles of P-type semiconductor metal oxide (s) and an ionomer.
• the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.005 and 0.115.
• the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.01 and 0.055.
• the nanoparticles of P-type semiconductive metal oxide (s) are advantageously chosen from the following metal oxides: V 2 O 5 , O, M0O 3 , WO 3 and mixtures thereof.
• the P-type semiconductor metal oxide nanoparticles are formed wholly or in part of WO 3 .
• the nanoparticles of metal oxide (s) semiconducting type P can be in the form of hydrates.
• the amount of P-type semiconducting metal oxide nanoparticles ranges from 90% to 99.5%, preferably from 95% to 99% by weight, relative to the total weight of the P-type semiconducting metal oxide (s).
• the term "ionomer” means a synthetic polymer, homopolymer or copolymer, comprising ionic or ionizable groups such as carboxylate, sulphonate or phosphonate functions. It can also be called “ionic polymer”.
• the ionomer used according to the invention is not an electrically conductive polymer.
• the ionomer used according to the invention is advantageously a perfluorosulfonated copolymer, and in particular a sulfonated tetrafluoroethylene copolymer.
• the ionomer is a tetrafluoroethylene backbone copolymer comprising perfluorovinyl ether groups and whose terminal ends are functionalized with sulphonate groups or sulphonic acid functional groups.
• the ionomer used in the invention is Nafion ® marketed by Dupont.
• the amount of ionomer (s) ranges from 0.5% to 10%, preferably from 1% to 5% by weight, relative to the total weight of the nanoparticles of semi-metallic oxide (s). P-type conductors and ionomer (s).
• an ink according to the invention may comprise from 0.5% to 20% by weight of dry matter relative to the total weight of the ink.
• dry material is understood to mean the constituents of the ink with the exception of the solvent, that is to say essentially the nanoparticles of P-type semiconducting metal oxide (s) and the ionomer.
• An ink according to the invention may further comprise an alcoholic solvent, in particular a lower alcohol, preferably a C 2 -C 4 lower monoalcohol and in particular ethanol, n-propanol, isopropanol, n-propanol and the like. butanol, 2-butanol or methylpropanol.
• an ink according to the invention may comprise from 80% to 99.5% by weight of alcoholic solvent relative to the total weight of the ink.
• the ink is usually formulated without surfactant.
• these post-treatments can be performed such treatments capable of homogenizing the mixture or to sediment the secondary particles. More specifically, these treatments may consist of agitation or centrifugation.
• the ink according to the invention consists of an organic solvent, at least nanoparticles of P-type semiconducting metal oxide (s) chosen from V 2 O 5 , NiO , M0O 3 , WO 3 and mixtures thereof and at least one ionomer which is a perfluorosulphonated copolymer, the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles chosen from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof ranging from 0.005 to 0.115.
• P-type semiconducting metal oxide s
• the ink thus formed is useful for constituting the P layer of an organic electronic device.
• the present invention relates to a P-type layer of an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconductor semiconductors. type P and an ionomer, the mass ratio between the ionomer and the nanoparticles of metal oxide (s) semiconductor P type is between 0.005 and 0.115, and preferably between 0.01 and 0.055.
• the layer according to the invention consists of at least P-type semiconductor metal oxide nanoparticles selected from V 2 O 5 , NiO, M0O 3 , WO 3 and their mixtures and at least one ionomer which is a perfluorosulfonated copolymer, the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles selected from V 2 O 5 , NiO, M0O 3 , WO 3 and mixtures thereof ranging from 0.005 to 0.115.
• the layer P may be formed by depositing the ink layer on the surface of the substrate under consideration by any wet process such as solution coating, dipping, inkjet printing, spin coating, dip coating, roller coating, spray coating.
• the deposit will be implemented by spin-coating, by strip casting, for example by scraping ("doctor bleading" in English), soaking, by spin coating, slot dye, spray jet. ink, by gravure or by screen printing.
• the thickness of the layer can be controlled during the deposition. Indeed, the constituents of the expected layer P being dissolved in a liquid, the fluid layer can be spread on the support in a thin film.
• a drying step is advantageously carried out.
• the solvent (s) of the ink can be easily evaporated during this drying step.
• This step is in particular carried out at a temperature ranging from 80 ° C. to 140 ° C. for a period ranging from 1 minute to 30 minutes.
• the thickness of the layer P according to the invention varies from 0.01 microns to approximately 50 microns.
• the thickness of the layer P is less than 20 microns, preferably less than 5 microns, and preferably less than 1 micron.
• the thickness of the layer P is between 0.05 microns and 0.1 microns.
• the invention also relates to a method of forming a P-type layer in an organic electronic device comprising the following steps:
• the support is respectively an anode electrode or an active layer.
• the deposition of the ink on the support can be carried out by any suitable wet process.
• the ink deposit is then dried or allowed to dry.
• the present invention also relates to an organic electronic device, characterized in that it comprises a P-type layer as defined above.
• An organic electronic device has a standard structure or a reverse structure.
• it may be an organic photovoltaic cell, an organic light-emitting diode (OLED) or an organic photodetector (OPD).
• OLED organic light-emitting diode
• OPD organic photodetector
• the invention also relates to a method of forming an organic electronic device, characterized in that it comprises a step of depositing an ink layer as defined above under conditions conducive to the formation of a layer of the type P.
• the present invention relates to a method of forming an organic electronic device in reverse structure comprising the following steps:
• - Have a stack composed of the following layers in this order: substrate, cathode, N-type layer, active layer;
• an ink layer according to the invention depositing on said active layer, an ink layer according to the invention under conditions conducive to the formation of a P-type layer.
• an anode and preferably a silver electrode.
• the present invention relates to a method of forming an organic electronic device in standard structure comprising the following steps:
• an ink layer according to the invention depositing on said anode, an ink layer according to the invention under conditions conducive to the formation of a P-type layer.
• Example 1 Formulation of an ink
• An ink is prepared from a commercial dispersion of WO 3 nanoparticles (2.5% by weight, without surfactant, 2-propanol base, particle size 10-20 nm, crystalline structure: triclinic) distributed by the Nanograde Company. Lie and a commercial formulation of Nafion ® (solution of Nafion ® 117 at ⁇ 5% dry matter, marketed by Sigma-Aldrich).
• the ink thus formed comprises 96.5 wt% isopropanol, 1% by weight of n-propanol, 2.45% by weight of W0 3 and 0.1% by mass Nafion ®.
• Example 2 Use of the Ink According to Example 1 to Form a P-Coat
• the organic electronic device under consideration is a NIP device (reverse) structure as follows:
• N layer is a zinc oxide (ZnO) layer and its active layer is a polymeric [6,6] -phenyl-C6i-methyl butyrate (PCBM) layer.
• ZnO zinc oxide
• PCBM polymeric [6,6] -phenyl-C6i-methyl butyrate
• Example 1 dedicated to forming the layer P, at the surface of the active layer of the stack, is applied by spin coating, spin coating and dried at a temperature of 120 ° C for 2 minutes.
• the thus formed p-layer contains 4% by weight of Nafion ® and 96% by weight of WO 3.
• the silver electrode is then formed on its surface.
• the active surface of the devices is 0.28 cm 2 .
• a NIP device (reverse) of the same structure, but control, is formed with a layer P comprising only WO 3 .
• ink used to form this layer P comprises 97.5% by weight of isopropanol, and 2.5% by weight of WO 3 .
• the corresponding layer P then contains 100% by weight of W0 3 .
• the performance of the PIN type devices (inverse) of Example 2 are measured at 25 ° C under an inert atmosphere in illumination standard conditions (1000 W / m 2, AM 1.5G).
• Jsc short circuit current density
• Table 1 shows the performance of the device with a P layer according to the invention.
• Table 2 reports the performance of the control device.
• Performance 2 performance of the device considered after exposure to air for 2 hours, in the absence of light
• Performance 3 performance of the device under consideration after heat treatment for 2 minutes at 150 ° C. in a glove box.
• the beneficial effect of Nafion ® appears clearly after exposure to air for 2 hours, in the absence of light, since the efficiency of the cells does not decrease.
• the initial performance of the devices are evaluated based on the mass ratio Nafion ® / W0 3 in the dry layer.
• test parameters are identical to those of example 3.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Life Sciences & Earth Sciences (AREA)
• Wood Science & Technology (AREA)
• Organic Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
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• Inorganic Chemistry (AREA)
• Nanotechnology (AREA)
• Crystallography & Structural Chemistry (AREA)
• Optics & Photonics (AREA)
• Electromagnetism (AREA)
• Photovoltaic Devices (AREA)
• Electroluminescent Light Sources (AREA)
• Inks, Pencil-Leads, Or Crayons (AREA)

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• 2013
  • 2013-11-26 FR FR1361621A patent/FR3013719B1/fr active Active
• 2014
  • 2014-11-25 EP EP14812650.1A patent/EP3074471A1/fr not_active Withdrawn
  • 2014-11-25 JP JP2016534160A patent/JP2017505531A/ja active Pending
  • 2014-11-25 KR KR1020167016890A patent/KR20160090858A/ko not_active Application Discontinuation
  • 2014-11-25 US US15/039,158 patent/US10174216B2/en not_active Expired - Fee Related
  • 2014-11-25 WO PCT/IB2014/066313 patent/WO2015079378A1/fr active Application Filing

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