JP2017502445A5 - - Google Patents

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Publication number
JP2017502445A5
JP2017502445A5 JP2016543222A JP2016543222A JP2017502445A5 JP 2017502445 A5 JP2017502445 A5 JP 2017502445A5 JP 2016543222 A JP2016543222 A JP 2016543222A JP 2016543222 A JP2016543222 A JP 2016543222A JP 2017502445 A5 JP2017502445 A5 JP 2017502445A5
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JP
Japan
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row
bank
bit
array
address
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JP2016543222A
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Japanese (ja)
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JP2017502445A (ja
JP6126313B2 (ja
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Priority claimed from US14/150,559 external-priority patent/US9552244B2/en
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Publication of JP6126313B2 publication Critical patent/JP6126313B2/ja
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JP2016543222A 2014-01-08 2014-12-12 抵抗性メモリのビット不良のリアルタイム訂正 Expired - Fee Related JP6126313B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/150,559 US9552244B2 (en) 2014-01-08 2014-01-08 Real time correction of bit failure in resistive memory
US14/150,559 2014-01-08
PCT/US2014/069984 WO2015105624A1 (en) 2014-01-08 2014-12-12 Real time correction of bit failure in resistive memory

Publications (3)

Publication Number Publication Date
JP2017502445A JP2017502445A (ja) 2017-01-19
JP2017502445A5 true JP2017502445A5 (enExample) 2017-03-30
JP6126313B2 JP6126313B2 (ja) 2017-05-10

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ID=52293223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016543222A Expired - Fee Related JP6126313B2 (ja) 2014-01-08 2014-12-12 抵抗性メモリのビット不良のリアルタイム訂正

Country Status (6)

Country Link
US (1) US9552244B2 (enExample)
EP (1) EP3092649B1 (enExample)
JP (1) JP6126313B2 (enExample)
KR (1) KR101746701B1 (enExample)
CN (1) CN105917413B (enExample)
WO (1) WO2015105624A1 (enExample)

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WO2015147872A1 (en) * 2014-03-28 2015-10-01 Hewlett-Packard Development Company, L. P. Data restoration
US9836349B2 (en) * 2015-05-29 2017-12-05 Winbond Electronics Corp. Methods and systems for detecting and correcting errors in nonvolatile memory
US9484114B1 (en) * 2015-07-29 2016-11-01 Sandisk Technologies Llc Decoding data using bit line defect information
US9933954B2 (en) * 2015-10-19 2018-04-03 Nxp Usa, Inc. Partitioned memory having pipeline writes
JP2019045910A (ja) 2017-08-29 2019-03-22 東芝メモリ株式会社 半導体記憶装置
DE102018126051A1 (de) 2018-01-12 2019-07-18 Taiwan Semiconductor Manufacturing Co. Ltd. Neuartige Speichervorrichtung
US10643722B2 (en) 2018-01-12 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device
US11521697B2 (en) 2019-01-30 2022-12-06 STMicroelectronics International, N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
US11393532B2 (en) 2019-04-24 2022-07-19 Stmicroelectronics International N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
WO2022139849A1 (en) 2020-12-26 2022-06-30 Intel Corporation Adaptive error correction to improve for system memory reliability, availability, and serviceability (ras)
CN116343892A (zh) * 2021-12-24 2023-06-27 浙江驰拓科技有限公司 存储器硬失效位元的修复系统及修复方法
JP7550895B2 (ja) * 2023-02-02 2024-09-13 ウィンボンド エレクトロニクス コーポレーション 半導体装置およびウエアレベリング方法
US20240403163A1 (en) * 2023-05-31 2024-12-05 Western Digital Technologies, Inc. Error rate management in non-uniform memory arrays

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JP2515097B2 (ja) * 1985-10-08 1996-07-10 日本テキサス・インスツルメンツ 株式会社 半導体記憶装置
JPH01165100A (ja) * 1988-08-26 1989-06-29 Hitachi Ltd 半導体メモリ
US5999463A (en) * 1997-07-21 1999-12-07 Samsung Electronics Co., Ltd. Redundancy fuse box and semiconductor device including column redundancy fuse box shared by a plurality of memory blocks
JP2002008390A (ja) * 2000-06-16 2002-01-11 Fujitsu Ltd 冗長セルを有するメモリデバイス
US6762952B2 (en) * 2002-05-01 2004-07-13 Hewlett-Packard Development Company, L.P. Minimizing errors in a magnetoresistive solid-state storage device
US6879530B2 (en) 2002-07-18 2005-04-12 Micron Technology, Inc. Apparatus for dynamically repairing a semiconductor memory
US7415640B1 (en) * 2003-10-13 2008-08-19 Virage Logic Corporation Methods and apparatuses that reduce the size of a repair data container for repairable memories
JP4062247B2 (ja) * 2003-12-11 2008-03-19 ソニー株式会社 半導体記憶装置
US8032816B2 (en) 2007-06-01 2011-10-04 International Business Machines Corporation Apparatus and method for distinguishing temporary and permanent errors in memory modules
US7849383B2 (en) * 2007-06-25 2010-12-07 Sandisk Corporation Systems and methods for reading nonvolatile memory using multiple reading schemes
US20090132876A1 (en) * 2007-11-19 2009-05-21 Ronald Ernest Freking Maintaining Error Statistics Concurrently Across Multiple Memory Ranks
US8086913B2 (en) * 2008-09-11 2011-12-27 Micron Technology, Inc. Methods, apparatus, and systems to repair memory
US7830726B2 (en) * 2008-09-30 2010-11-09 Seagate Technology Llc Data storage using read-mask-write operation
JP2011008850A (ja) * 2009-06-24 2011-01-13 Sony Corp メモリ及び情報処理方法
US8839053B2 (en) 2010-05-27 2014-09-16 Microsoft Corporation Error correcting pointers for non-volatile storage
US8856614B2 (en) * 2010-07-29 2014-10-07 Kabushiki Kaisha Toshiba Semiconductor memory device detecting error
JP2012033222A (ja) * 2010-07-29 2012-02-16 Toshiba Corp 半導体記憶装置およびその制御方法
US8467258B2 (en) 2010-08-30 2013-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for bit cell repair
US20120173921A1 (en) * 2011-01-05 2012-07-05 Advanced Micro Devices, Inc. Redundancy memory storage system and a method for controlling a redundancy memory storage system
JP5377526B2 (ja) 2011-01-13 2013-12-25 株式会社東芝 不揮発性半導体記憶装置
JP5204868B2 (ja) * 2011-04-12 2013-06-05 シャープ株式会社 半導体記憶装置
KR20130049332A (ko) 2011-11-04 2013-05-14 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
US8996936B2 (en) * 2011-12-08 2015-03-31 Sandisk Technologies Inc. Enhanced error correction in memory devices
US9110824B2 (en) * 2012-06-08 2015-08-18 Silicon Motion Inc. Method, controller, and memory device for correcting data bit(s) of at least one cell of flash memory

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