JP2017199909A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017199909A5 JP2017199909A5 JP2017087781A JP2017087781A JP2017199909A5 JP 2017199909 A5 JP2017199909 A5 JP 2017199909A5 JP 2017087781 A JP2017087781 A JP 2017087781A JP 2017087781 A JP2017087781 A JP 2017087781A JP 2017199909 A5 JP2017199909 A5 JP 2017199909A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- plasma
- containing material
- substrate
- oxidant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 20
- 239000007800 oxidant agent Substances 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 239000003085 diluting agent Substances 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 28
- 238000012546 transfer Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 208000001930 Autoimmune limbic encephalitis Diseases 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000003607 modifier Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662329916P | 2016-04-29 | 2016-04-29 | |
| US62/329,916 | 2016-04-29 | ||
| US15/494,245 | 2017-04-21 | ||
| US15/494,245 US10269566B2 (en) | 2016-04-29 | 2017-04-21 | Etching substrates using ale and selective deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017199909A JP2017199909A (ja) | 2017-11-02 |
| JP2017199909A5 true JP2017199909A5 (https=) | 2020-07-02 |
| JP7058080B2 JP7058080B2 (ja) | 2022-04-21 |
Family
ID=60156907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017087781A Active JP7058080B2 (ja) | 2016-04-29 | 2017-04-27 | Ａｌｅおよび選択的蒸着を用いた基板のエッチング |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10269566B2 (https=) |
| JP (1) | JP7058080B2 (https=) |
| KR (2) | KR102504770B1 (https=) |
| CN (2) | CN107464747B (https=) |
| SG (1) | SG10201703480QA (https=) |
| TW (1) | TWI725177B (https=) |
Families Citing this family (143)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| KR20240015167A (ko) | 2014-10-17 | 2024-02-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성 |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US10109464B2 (en) | 2016-01-11 | 2018-10-23 | Applied Materials, Inc. | Minimization of ring erosion during plasma processes |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| US10685862B2 (en) | 2016-01-22 | 2020-06-16 | Applied Materials, Inc. | Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device |
| CN116110846A (zh) | 2016-01-26 | 2023-05-12 | 应用材料公司 | 晶片边缘环升降解决方案 |
| CN108369922B (zh) | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
| US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US10204795B2 (en) | 2016-02-04 | 2019-02-12 | Applied Materials, Inc. | Flow distribution plate for surface fluorine reduction |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| KR20170122910A (ko) * | 2016-04-27 | 2017-11-07 | 성균관대학교산학협력단 | 원자층 식각방법 |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US9997371B1 (en) | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
| US10832909B2 (en) * | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US10494715B2 (en) | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10763081B2 (en) | 2017-07-10 | 2020-09-01 | Applied Materials, Inc. | Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10714372B2 (en) | 2017-09-20 | 2020-07-14 | Applied Materials, Inc. | System for coupling a voltage to portions of a substrate |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10763150B2 (en) | 2017-09-20 | 2020-09-01 | Applied Materials, Inc. | System for coupling a voltage to spatially segmented portions of the wafer with variable voltage |
| US10811296B2 (en) | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
| US10904996B2 (en) | 2017-09-20 | 2021-01-26 | Applied Materials, Inc. | Substrate support with electrically floating power supply |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US10763083B2 (en) | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
| US10157773B1 (en) * | 2017-11-28 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure having layer with re-entrant profile and method of forming the same |
| US10217626B1 (en) * | 2017-12-15 | 2019-02-26 | Mattson Technology, Inc. | Surface treatment of substrates using passivation layers |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US10727075B2 (en) | 2017-12-22 | 2020-07-28 | Applied Materials, Inc. | Uniform EUV photoresist patterning utilizing pulsed plasma process |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| WO2019190781A1 (en) | 2018-03-30 | 2019-10-03 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| US10573527B2 (en) * | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US11520953B2 (en) * | 2018-05-03 | 2022-12-06 | Lam Research Corporation | Predicting etch characteristics in thermal etching and atomic layer etching |
| US10566194B2 (en) * | 2018-05-07 | 2020-02-18 | Lam Research Corporation | Selective deposition of etch-stop layer for enhanced patterning |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US10347500B1 (en) | 2018-06-04 | 2019-07-09 | Applied Materials, Inc. | Device fabrication via pulsed plasma |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| JP7066565B2 (ja) * | 2018-07-27 | 2022-05-13 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| US11120997B2 (en) | 2018-08-31 | 2021-09-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface treatment for etch tuning |
| WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US10811256B2 (en) * | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| WO2020100227A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びそれを用いた被処理試料の処理方法 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| CN118315254A (zh) | 2019-01-22 | 2024-07-09 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US10784089B2 (en) | 2019-02-01 | 2020-09-22 | Applied Materials, Inc. | Temperature and bias control of edge ring |
| US20220165546A1 (en) * | 2019-03-14 | 2022-05-26 | Lam Research Corporation | Plasma etch tool for high aspect ratio etching |
| WO2020214327A1 (en) | 2019-04-19 | 2020-10-22 | Applied Materials, Inc. | Ring removal from processing chamber |
| US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
| US12062538B2 (en) * | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| CN114270476B (zh) * | 2019-06-24 | 2025-09-30 | 朗姆研究公司 | 选择性碳沉积 |
| US10790157B1 (en) * | 2019-07-16 | 2020-09-29 | University Of Maryland, College Park | Achieving etching selectivity for atomic layer etching processes by utilizing material-selective deposition phenomena |
| CN110718440B (zh) * | 2019-10-16 | 2022-06-14 | 北京北方华创微电子装备有限公司 | 原子层刻蚀设备及刻蚀方法 |
| CN112802736B (zh) * | 2019-11-14 | 2025-06-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| CN115244655A (zh) | 2020-01-03 | 2022-10-25 | 朗姆研究公司 | 站与站之间的背面弯曲补偿沉积的控制 |
| JP7645891B2 (ja) | 2020-01-30 | 2025-03-14 | ラム リサーチ コーポレーション | 局所応力調整のためのｕｖ硬化 |
| US11424123B2 (en) * | 2020-02-25 | 2022-08-23 | Tokyo Electron Limited | Forming a semiconductor feature using atomic layer etch |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| JP7394665B2 (ja) * | 2020-03-11 | 2023-12-08 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US11651970B2 (en) | 2020-05-19 | 2023-05-16 | Tokyo Electron Limited | Systems and methods for selective ion mass segregation in pulsed plasma atomic layer etching |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11515163B2 (en) * | 2021-01-06 | 2022-11-29 | Applied Materials, Inc. | Low temperature graphene growth |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399186A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12571092B2 (en) | 2021-07-15 | 2026-03-10 | Applied Materials, Inc. | Integrated methods for graphene formation |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| KR20240162514A (ko) * | 2022-03-22 | 2024-11-15 | 램 리써치 코포레이션 | 탄소 함유층의 높은 에너지 원자층 에칭 |
| US12518975B2 (en) * | 2022-04-28 | 2026-01-06 | Hitachi High-Tech Corporation | Etching method |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| US20240290617A1 (en) * | 2023-02-27 | 2024-08-29 | Globalfoundries U.S. Inc. | Field-effect transistors with a gate dielectric layer formed on a surface treated by atomic layer etching |
| KR102626118B1 (ko) | 2023-09-12 | 2024-01-17 | 에이피티씨 주식회사 | 셀로우 에칭 프로세스 챔버 |
| KR102691602B1 (ko) | 2024-03-22 | 2024-08-05 | 브이엠 주식회사 | 기판 손상 감소 구조의 원자층 식각 장치 |
| KR102826840B1 (ko) | 2024-11-13 | 2025-06-30 | 브이엠 주식회사 | 고온 기체 공급형 공정 시스템 |
| CN119218986B (zh) * | 2024-11-28 | 2025-04-08 | 中国人民解放军国防科技大学 | 一种基于脉冲离子束的石墨烯单层去除方法 |
Family Cites Families (111)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH061769B2 (ja) | 1983-08-10 | 1994-01-05 | 株式会社日立製作所 | アルミナ膜のパターニング方法 |
| US4756794A (en) * | 1987-08-31 | 1988-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer etching |
| JPH06326060A (ja) | 1993-05-12 | 1994-11-25 | Hitachi Ltd | 固体表面加工方法 |
| US6022806A (en) | 1994-03-15 | 2000-02-08 | Kabushiki Kaisha Toshiba | Method of forming a film in recess by vapor phase growth |
| JP2002510146A (ja) | 1998-01-13 | 2002-04-02 | アプライド マテリアルズ インコーポレイテッド | 異方性プラチナプロファイルのエッチング方法 |
| US6177353B1 (en) | 1998-09-15 | 2001-01-23 | Infineon Technologies North America Corp. | Metallization etching techniques for reducing post-etch corrosion of metal lines |
| US8696875B2 (en) | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| EP1120820A3 (en) | 2000-01-24 | 2008-01-09 | Ebara Corporation | Method and apparatus for forming interconnect |
| US6517602B2 (en) | 2000-03-14 | 2003-02-11 | Hitachi Metals, Ltd | Solder ball and method for producing same |
| JP3662472B2 (ja) | 2000-05-09 | 2005-06-22 | エム・エフエスアイ株式会社 | 基板表面の処理方法 |
| US6677242B1 (en) * | 2000-08-12 | 2004-01-13 | Applied Materials Inc. | Integrated shallow trench isolation approach |
| US20020058409A1 (en) | 2000-11-16 | 2002-05-16 | Ching-Te Lin | Elimination of overhang in liner/barrier/seed layers using post-deposition sputter etch |
| US6448192B1 (en) | 2001-04-16 | 2002-09-10 | Motorola, Inc. | Method for forming a high dielectric constant material |
| US6562700B1 (en) | 2001-05-31 | 2003-05-13 | Lsi Logic Corporation | Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal |
| US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6884730B2 (en) | 2002-07-02 | 2005-04-26 | Headway Technologies, Inc. | Method of etching a film of magnetic material and method of manufacturing a thin-film magnetic head |
| US6933239B2 (en) | 2003-01-13 | 2005-08-23 | Applied Materials, Inc. | Method for removing conductive residue |
| US6841484B2 (en) | 2003-04-17 | 2005-01-11 | Chentsau Ying | Method of fabricating a magneto-resistive random access memory (MRAM) device |
| US7067407B2 (en) | 2003-08-04 | 2006-06-27 | Asm International, N.V. | Method of growing electrical conductors |
| US7018469B2 (en) | 2003-09-23 | 2006-03-28 | Micron Technology, Inc. | Atomic layer deposition methods of forming silicon dioxide comprising layers |
| US7371688B2 (en) | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
| US7341946B2 (en) | 2003-11-10 | 2008-03-11 | Novellus Systems, Inc. | Methods for the electrochemical deposition of copper onto a barrier layer of a work piece |
| US20050199585A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for metal etch hardmask application |
| US7115522B2 (en) | 2004-07-09 | 2006-10-03 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
| US7196955B2 (en) | 2005-01-12 | 2007-03-27 | Hewlett-Packard Development Company, L.P. | Hardmasks for providing thermally assisted switching of magnetic memory elements |
| US7365026B2 (en) | 2005-02-01 | 2008-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | CxHy sacrificial layer for cu/low-k interconnects |
| JP4860219B2 (ja) | 2005-02-14 | 2012-01-25 | 東京エレクトロン株式会社 | 基板の処理方法、電子デバイスの製造方法及びプログラム |
| US7524769B2 (en) * | 2005-03-31 | 2009-04-28 | Tokyo Electron Limited | Method and system for removing an oxide from a substrate |
| US7214626B2 (en) | 2005-08-24 | 2007-05-08 | United Microelectronics Corp. | Etching process for decreasing mask defect |
| US20070095367A1 (en) | 2005-10-28 | 2007-05-03 | Yaxin Wang | Apparatus and method for atomic layer cleaning and polishing |
| US20070238301A1 (en) | 2006-03-28 | 2007-10-11 | Cabral Stephen H | Batch processing system and method for performing chemical oxide removal |
| US7795148B2 (en) | 2006-03-28 | 2010-09-14 | Tokyo Electron Limited | Method for removing damaged dielectric material |
| US7368393B2 (en) | 2006-04-20 | 2008-05-06 | International Business Machines Corporation | Chemical oxide removal of plasma damaged SiCOH low k dielectrics |
| US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
| US8465991B2 (en) | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
| JP5108489B2 (ja) * | 2007-01-16 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| KR101330707B1 (ko) | 2007-07-19 | 2013-11-19 | 삼성전자주식회사 | 반도체 장치의 형성 방법 |
| US8481423B2 (en) * | 2007-09-19 | 2013-07-09 | International Business Machines Corporation | Methods to mitigate plasma damage in organosilicate dielectrics |
| US8247030B2 (en) | 2008-03-07 | 2012-08-21 | Tokyo Electron Limited | Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer |
| US7948044B2 (en) | 2008-04-09 | 2011-05-24 | Magic Technologies, Inc. | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same |
| US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
| US7943527B2 (en) | 2008-05-30 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Surface preparation for thin film growth by enhanced nucleation |
| JP5128421B2 (ja) * | 2008-09-04 | 2013-01-23 | 東京エレクトロン株式会社 | プラズマ処理方法およびレジストパターンの改質方法 |
| JP5085595B2 (ja) | 2008-09-08 | 2012-11-28 | 株式会社東芝 | コアシェル型磁性材料、コアシェル型磁性材料の製造方法、デバイス装置、およびアンテナ装置。 |
| JP5260356B2 (ja) * | 2009-03-05 | 2013-08-14 | 東京エレクトロン株式会社 | 基板処理方法 |
| US7759239B1 (en) | 2009-05-05 | 2010-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of reducing a critical dimension of a semiconductor device |
| US9034768B2 (en) | 2010-07-09 | 2015-05-19 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| US8124531B2 (en) | 2009-08-04 | 2012-02-28 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| JP5813303B2 (ja) | 2009-11-20 | 2015-11-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| US20110139748A1 (en) | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US8227344B2 (en) | 2010-02-26 | 2012-07-24 | Tokyo Electron Limited | Hybrid in-situ dry cleaning of oxidized surface layers |
| US20120100308A1 (en) | 2010-10-25 | 2012-04-26 | Asm America, Inc. | Ternary metal alloys with tunable stoichiometries |
| US8546263B2 (en) | 2011-04-27 | 2013-10-01 | Applied Materials, Inc. | Method of patterning of magnetic tunnel junctions |
| KR101380835B1 (ko) | 2011-07-22 | 2014-04-04 | 성균관대학교산학협력단 | 그래핀의 원자층 식각 방법 |
| WO2013027549A1 (ja) * | 2011-08-25 | 2013-02-28 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置および記録媒体 |
| US9666414B2 (en) * | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
| US8808561B2 (en) | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
| US8809994B2 (en) | 2011-12-09 | 2014-08-19 | International Business Machines Corporation | Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate |
| US8883028B2 (en) | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
| JP2014049466A (ja) | 2012-08-29 | 2014-03-17 | Tokyo Electron Ltd | エッチング処理方法及び基板処理装置 |
| US9177780B2 (en) | 2012-10-02 | 2015-11-03 | Applied Materials, Inc. | Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition |
| JP6035117B2 (ja) * | 2012-11-09 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| US8969997B2 (en) | 2012-11-14 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation structures and methods of forming the same |
| JP5918108B2 (ja) | 2012-11-16 | 2016-05-18 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US8927989B2 (en) | 2012-11-28 | 2015-01-06 | International Business Machines Corporation | Voltage contrast inspection of deep trench isolation |
| US9437425B2 (en) * | 2013-01-11 | 2016-09-06 | Solan, LLC | Methods for integrating lead and graphene growth and devices formed therefrom |
| JP6242095B2 (ja) * | 2013-06-28 | 2017-12-06 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
| US8940646B1 (en) | 2013-07-12 | 2015-01-27 | Lam Research Corporation | Sequential precursor dosing in an ALD multi-station/batch reactor |
| US9362163B2 (en) * | 2013-07-30 | 2016-06-07 | Lam Research Corporation | Methods and apparatuses for atomic layer cleaning of contacts and vias |
| JP6452136B2 (ja) | 2013-09-04 | 2019-01-16 | 東京エレクトロン株式会社 | 誘導自己組織化用の化学テンプレートを形成するための硬化フォトレジストのｕｖ支援剥離 |
| US9257431B2 (en) | 2013-09-25 | 2016-02-09 | Micron Technology, Inc. | Memory cell with independently-sized electrode |
| US9343308B2 (en) * | 2013-10-28 | 2016-05-17 | Asm Ip Holding B.V. | Method for trimming carbon-containing film at reduced trimming rate |
| US9514953B2 (en) * | 2013-11-20 | 2016-12-06 | Applied Materials, Inc. | Methods for barrier layer removal |
| JP5846335B1 (ja) | 2014-03-26 | 2016-01-20 | 東レ株式会社 | 半導体装置の製造方法及び半導体装置 |
| US9257638B2 (en) | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
| US9773683B2 (en) | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
| JP6159757B2 (ja) | 2014-07-10 | 2017-07-05 | 東京エレクトロン株式会社 | 基板の高精度エッチングのプラズマ処理方法 |
| FR3023971B1 (fr) | 2014-07-18 | 2016-08-05 | Commissariat Energie Atomique | Procede de formation des espaceurs d'une grille d'un transistor |
| CN105448635B (zh) * | 2014-08-28 | 2018-01-09 | 北京北方华创微电子装备有限公司 | 原子层刻蚀装置及采用其的原子层刻蚀方法 |
| US9520294B2 (en) * | 2014-08-29 | 2016-12-13 | Applied Materials, Inc. | Atomic layer etch process using an electron beam |
| US9240315B1 (en) | 2014-10-10 | 2016-01-19 | Applied Materials, Inc. | CVD oxide surface pre-conditioning by inductively coupled O2 plasma |
| US9609730B2 (en) | 2014-11-12 | 2017-03-28 | Lam Research Corporation | Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas |
| WO2016100873A1 (en) | 2014-12-18 | 2016-06-23 | The Regents Of The University Of Colorado, A Body Corporate | Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions |
| US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| US9892935B2 (en) | 2015-05-28 | 2018-02-13 | International Business Machines Corporation | Limiting electronic package warpage with semiconductor chip lid and lid-ring |
| KR102399578B1 (ko) | 2015-06-05 | 2022-05-17 | 램 리써치 코포레이션 | GaN 및 다른 III-V 족 재료들의 원자층 에칭 |
| US9449843B1 (en) | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
| US9922839B2 (en) | 2015-06-23 | 2018-03-20 | Lam Research Corporation | Low roughness EUV lithography |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US9620376B2 (en) | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
| US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| KR20170050056A (ko) | 2015-10-29 | 2017-05-11 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
| KR102652512B1 (ko) | 2015-11-10 | 2024-03-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정 |
| WO2017099718A1 (en) | 2015-12-08 | 2017-06-15 | Intel Corporation | Atomic layer etching of transition metals by halogen surface oxidation |
| US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| TWI658512B (zh) | 2016-02-23 | 2019-05-01 | Tokyo Electron Limited | 原子層蝕刻用方法與系統 |
| US10256108B2 (en) | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US9837312B1 (en) | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US9997371B1 (en) | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US10494715B2 (en) | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US20190131130A1 (en) | 2017-10-31 | 2019-05-02 | Lam Research Corporation | Etching metal oxide substrates using ale and selective deposition |
-
2017
- 2017-04-21 US US15/494,245 patent/US10269566B2/en active Active
- 2017-04-25 KR KR1020170052754A patent/KR102504770B1/ko active Active
- 2017-04-26 TW TW106113845A patent/TWI725177B/zh active
- 2017-04-27 JP JP2017087781A patent/JP7058080B2/ja active Active
- 2017-04-28 CN CN201710291502.8A patent/CN107464747B/zh active Active
- 2017-04-28 SG SG10201703480QA patent/SG10201703480QA/en unknown
- 2017-04-28 CN CN202210694944.8A patent/CN115241052A/zh active Pending
-
2019
- 2019-03-21 US US16/361,083 patent/US10685836B2/en active Active
-
2023
- 2023-02-23 KR KR1020230024368A patent/KR102735327B1/ko active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017199909A5 (https=) | ||
| US10685836B2 (en) | Etching substrates using ALE and selective deposition | |
| TWI905661B (zh) | 用於圖案化輻射光阻圖案化的整合型乾式處理系統 | |
| US11257674B2 (en) | Eliminating yield impact of stochastics in lithography | |
| KR102861905B1 (ko) | Ale 및 선택적 증착을 사용한 금속 옥사이드 기판들 에칭 | |
| JP7754925B2 (ja) | フォトレジストの乾式裏面及びベベルエッジ洗浄 | |
| US10727073B2 (en) | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces | |
| JP2023174888A (ja) | フォトレジストのドライ除去用プロセスツール | |
| US10056264B2 (en) | Atomic layer etching of GaN and other III-V materials | |
| US20180308687A1 (en) | Euv photopatterning and selective deposition for negative pattern mask | |
| KR101773806B1 (ko) | 기판의 클리닝 방법 및 기판의 클리닝 장치 | |
| US20240036474A1 (en) | Control of metallic contamination from metal-containing photoresist | |
| JP2024532665A5 (https=) | ||
| JP2025535715A (ja) | 熱およびプラズマ処理を使用した乾式チャンバ洗浄 | |
| US20240087893A1 (en) | Methods for forming mandrels and spacers, related structures, and systems |