JP2017199782A - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 233
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 105
- 239000011737 fluorine Substances 0.000 claims abstract description 105
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 84
- 238000010926 purge Methods 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 238000007599 discharging Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 70
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 87
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 42
- ZEIYBPGWHWECHV-UHFFFAOYSA-N nitrosyl fluoride Chemical compound FN=O ZEIYBPGWHWECHV-UHFFFAOYSA-N 0.000 description 11
- 241000894007 species Species 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 125000001153 fluoro group Chemical group F* 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000002052 molecular layer Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- ATVLVRVBCRICNU-UHFFFAOYSA-N trifluorosilicon Chemical compound F[Si](F)F ATVLVRVBCRICNU-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 241000255777 Lepidoptera Species 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
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Abstract
【解決手段】エッチング装置10は、弗素ガス供給系18により、シリコン系の膜を有するウエハWを収容するチャンバ11の内部に弗素ガスを供給し、パージガス供給系20により、供給された弗素ガスを排出するためのパージガスをチャンバ11の内部に供給し、一酸化窒素ガス供給系19により、弗素ガスが排出されたチャンバ11の内部に一酸化窒素ガスを供給する。
【選択図】図2
Description
F2 + NO → FNO↑ + F* …(1)
F* + SiFx(xは1〜3の自然数) → SiF4↑ …(2)
Si + 2F2 → SiF2−F2(吸着) …(3)
SiF2−F2 + NO → SiF3 + FNO↑ …(4)
SiF3 + F2 → SiF3−F2(吸着) …(5)
SiF3−F2 + NO → SiF4↑+ FNO↑ …(6)
10 エッチング装置
11 チャンバ
18 弗素ガス供給系
19 一酸化窒素ガス供給系
20 パージガス供給系
30 温度調整器
31 制御ユニット
Claims (7)
- シリコン系の膜を有する基板を収容する処理室の内部に弗素系ガスを供給する弗素系ガス供給ステップと、
前記供給された弗素系ガスを排出するためのパージガスを前記処理室の内部に供給するパージガス供給ステップと、
前記弗素系ガスが排出された前記処理室の内部に窒素系ガスを供給する窒素系ガス供給ステップとを有する基板処理方法。 - 少なくとも前記弗素系ガス供給ステップ及び前記パージガス供給ステップにおいて前記基板の温度を60℃以下に維持することを特徴とする請求項1記載の基板処理方法。
- 前記供給された窒素系ガスを排出するためのパージガスを前記処理室の内部に供給する他のパージガス供給ステップをさらに有し、
前記弗素系ガス供給ステップ、前記パージガス供給ステップ、前記窒素系ガス供給ステップ及び前記他のパージガス供給ステップをこの順で繰り返すことを特徴とする請求項1又は2記載の基板処理方法。 - 前記弗素系ガスは弗素(F2)ガスであることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理方法。
- 前記窒素系ガスは一酸化窒素(NO)ガスであることを特徴とする請求項1乃至4のいずれか1項に記載の基板処理方法。
- シリコン系の膜を有する基板を収容する処理室を備える基板処理装置であって、
前記処理室の内部に弗素系ガスを供給する弗素系ガス供給系と、
前記処理室の内部にパージガスを供給するパージガス供給系と、
前記処理室の内部に窒素系ガスを供給する窒素系ガス供給系と、
前記基板の温度を調整する温度調整器と、
各構成要素の動作を制御する制御部とを備え、
前記制御部は、前記弗素系ガス供給系、前記パージガス供給系及び前記窒素系ガス供給系を用いて前記処理室の内部に前記弗素系ガスを供給し、前記供給された弗素系ガスを排出するためのパージガスを前記処理室の内部に供給し、さらに、前記弗素系ガスが排出された前記処理室の内部に前記窒素系ガスを供給することを特徴とする基板処理装置。 - 前記制御部は、前記温度調整器を用いて前記処理室の内部に前記弗素系ガス及び前記パージガスが供給される際、前記基板の温度を60℃以下に維持することを特徴とする請求項6記載の基板処理装置。
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US15/486,145 US10312101B2 (en) | 2016-04-27 | 2017-04-12 | Substrate processing method and substrate processing apparatus |
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KR20210119301A (ko) * | 2020-03-24 | 2021-10-05 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
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JP7114554B2 (ja) | 2019-11-22 | 2022-08-08 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0582450A (ja) * | 1991-09-20 | 1993-04-02 | Fujitsu Ltd | 半導体装置製造用気相反応装置 |
JP2005101583A (ja) * | 2003-08-29 | 2005-04-14 | Toshiba Corp | 成膜装置のクリーニング方法および成膜装置 |
JP2010245512A (ja) * | 2009-03-19 | 2010-10-28 | Tokyo Electron Ltd | 基板のエッチング方法及びシステム |
JP2013179352A (ja) * | 2013-06-04 | 2013-09-09 | Tokyo Electron Ltd | 熱処理装置の運転方法 |
US20150270140A1 (en) * | 2014-06-09 | 2015-09-24 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
JP2015192063A (ja) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | アモルファスシリコン膜形成装置の洗浄方法、アモルファスシリコン膜の形成方法およびアモルファスシリコン膜形成装置 |
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---|---|---|---|---|
US20050082002A1 (en) | 2003-08-29 | 2005-04-21 | Yuusuke Sato | Method of cleaning a film-forming apparatus and film-forming apparatus |
US20160181116A1 (en) * | 2014-12-18 | 2016-06-23 | Lam Research Corporation | Selective nitride etch |
US9502238B2 (en) * | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0582450A (ja) * | 1991-09-20 | 1993-04-02 | Fujitsu Ltd | 半導体装置製造用気相反応装置 |
JP2005101583A (ja) * | 2003-08-29 | 2005-04-14 | Toshiba Corp | 成膜装置のクリーニング方法および成膜装置 |
JP2010245512A (ja) * | 2009-03-19 | 2010-10-28 | Tokyo Electron Ltd | 基板のエッチング方法及びシステム |
JP2013179352A (ja) * | 2013-06-04 | 2013-09-09 | Tokyo Electron Ltd | 熱処理装置の運転方法 |
JP2015192063A (ja) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | アモルファスシリコン膜形成装置の洗浄方法、アモルファスシリコン膜の形成方法およびアモルファスシリコン膜形成装置 |
US20150270140A1 (en) * | 2014-06-09 | 2015-09-24 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
Cited By (2)
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KR20210119301A (ko) * | 2020-03-24 | 2021-10-05 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
KR102581130B1 (ko) | 2020-03-24 | 2023-09-21 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
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