JP2017183494A - 基板処理装置、基板処理装置の制御方法、及び基板処理システム - Google Patents
基板処理装置、基板処理装置の制御方法、及び基板処理システム Download PDFInfo
- Publication number
- JP2017183494A JP2017183494A JP2016068204A JP2016068204A JP2017183494A JP 2017183494 A JP2017183494 A JP 2017183494A JP 2016068204 A JP2016068204 A JP 2016068204A JP 2016068204 A JP2016068204 A JP 2016068204A JP 2017183494 A JP2017183494 A JP 2017183494A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- substrate
- processing
- imaging
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 299
- 239000000758 substrate Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 107
- 238000003384 imaging method Methods 0.000 claims abstract description 245
- 238000005259 measurement Methods 0.000 claims abstract description 133
- 230000002093 peripheral effect Effects 0.000 claims abstract description 97
- 239000007788 liquid Substances 0.000 claims description 154
- 230000008569 process Effects 0.000 claims description 86
- 230000010365 information processing Effects 0.000 claims description 34
- 235000012431 wafers Nutrition 0.000 description 312
- 239000000126 substance Substances 0.000 description 85
- 230000007246 mechanism Effects 0.000 description 47
- 238000012546 transfer Methods 0.000 description 31
- 239000007789 gas Substances 0.000 description 29
- 239000000243 solution Substances 0.000 description 24
- 230000008859 change Effects 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 22
- 238000007726 management method Methods 0.000 description 12
- 239000008155 medical solution Substances 0.000 description 10
- 238000012993 chemical processing Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000010191 image analysis Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 238000001311 chemical methods and process Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000003708 edge detection Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000036962 time dependent Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000037007 arousal Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Human Computer Interaction (AREA)
- Automation & Control Theory (AREA)
Abstract
【解決手段】前記基板(W)の膜の種別に関する情報を取得する取得工程(S502)と、予め記憶部に記憶された測定用設定のテーブルの中から、前記取得した膜の種別に対応する測定用設定を選択する選択工程(S503)と、前記選択工程において選択された測定用設定を使用して前記撮像部(270)に前記基板の周縁部を撮影するよう制御する制御工程(S504)と、を備える。
【選択図】図23
Description
本実施形態では、ステップS302及びステップS303で撮像した位置から1度ずつ回転させながら360回の撮像を行うので、360個の位置で撮像を行った場合にのみ判断“Yes”がなされる。
・カット幅[mm]=カット面領域1102の幅[mm]+ラウンド領域1103の幅[mm]・・・式(1)
ここで、
・カット面領域1102の幅[mm]=(カット面境界1110の位置[画素]−処理膜境界1109の位置[画素])/スケーリング値[画素/mm]・・・式(2)
・ラウンド領域1103の幅[mm]=(ウエハ周縁端1111の位置[画素]−カット面境界1110の位置[画素])/スケーリング値[画素/mm]・・・式(3)
上記実施形態の変形例1として、焦点調節に関連するシステム構成例を2つ説明する。
上記実施形態の変形例2として、図7の全体フローにおける測定処理又はウエハ処理を追加的に実行する例を説明する。図7のステップS104での測定結果として、カット幅が図16の様な滑らかな曲線を描かず、例えば、数度単位で現れる小さな凹凸を複数個含んでいる場合がある(不図示)。この様な現象は特に処理膜境界1109が径方向に一定でないときに起こるので、処理膜が周方向に一様の幅で除去されず、部分的な膜残りが生じていることを意味する。部分的な膜残りは、ノズル位置設定の精度不足のためではなく、薬液処理の実行時間が不足しているために起こっている可能性が高い。したがって、カット幅の測定結果に小さな凹凸が生じた場合は、もう一度同じ薬液処理を繰り返す制御を行う。これにより、残った膜の上に十分な量の薬液が再び供給されるので、膜残りも容易に除去でき、測定対象であったウエハW自体も良好な処理結果を得ることができる。
第1実施形態では、撮像装置270を使用して偏芯量WDを計測できるようにしたが、この偏芯量WDに基づき、ウエハWの保持位置を自動調整するようにしても良い。本実施形態では、保持位置調整機構を処理ユニット16の内部に設けた場合の動作について説明する。
上記実施形態では、測定処理装置601は、測定処理を開始するに先立ちまず撮像装置270の撮像設定を行っているが、これを測定対象のウエハや処理の内容に応じて変更可能にするように構成しても良い。
本実施形態では、情報処理装置601が蓄積する測定処理結果の情報を分析処理し、装置の保守や管理に活用する手法について説明する。
第1〜第4実施形態では、ウエハ処理の結果又は偏芯量を取得するために、薬液処理を行う前か又は処理を行った後に、測定処理を行うものであった。
16 基板処理ユニット
250A 処理液供給部
250B 処理液供給部
270 撮像装置
601 測定処理装置
602 情報処理装置
Claims (7)
- 基板を保持して回転させる回転保持部と、基板の周縁部の膜を除去するための処理液を供給する処理液供給部と、前記基板の周縁部を撮像する撮像部と、を備える基板処理装置の制御方法であって、
前記基板の膜の種別に関する情報を取得する取得工程と、
予め記憶部に記憶された測定用設定のテーブルの中から、前記取得した膜の種別に対応する測定用設定を選択する選択工程と、
前記選択工程において選択された測定用設定を使用して前記撮像部に前記基板の周縁部を撮影するよう制御する制御工程と、
を備えることを特徴とする基板処理装置の制御方法。 - 前記記憶部には、前記測定用設定として明るさに関する複数の撮像条件が記憶されており、
前記選択工程は、前記取得した膜の種別に適した撮像条件を選択することを特徴とする請求項1に記載の基板処理装置の制御方法。 - 前記選択工程は、前記取得した膜の種別に適した明るさの異なる複数の撮像条件を選択し、
前記制御工程は、前記複数の撮像条件を用いて前記撮像部に複数回、基板を撮像させることを特徴とする請求項2に記載の基板処理装置の制御方法。 - 前記取得工程は、前記基板の周縁部の膜の除去幅の設定情報をさらに取得し、
前記選択工程は、前記膜の種別と前記除去幅の設定情報とに対応する測定用設定を選択することを特徴とする請求項1〜3のいずれかに記載の基板処理装置の制御方法。 - 前記取得工程は、前記基板処理装置を用いた基板処理レシピの記載から前記基板上の膜の種別の情報を取得することを特徴とする請求項1〜4のいずれかに記載の基板処理装置の制御方法。
- 基板の周縁部の膜を除去する処理を行う基板処理装置であって、
前記基板を下面から吸着保持して回転させる回転保持部と、
前記回転保持部により基板が回転しているとき、前記基板の周縁部に前記膜を除去するための処理液を供給する処理液供給部と、
前記基板の周縁部を撮像する撮像部と、を備え、
前記撮像部は、異なる複数の撮像条件を選択的に設定可能であり、前記基板の膜の種別に応じて選択された撮像条件を使用して前記基板の周縁部を撮影することを特徴とする基板処理装置。 - 基板の周縁部の膜を除去する処理を行う基板処理装置と、撮像画像に基づく測定処理を行う測定処理装置と、測定処理に関する情報を管理する情報処理装置と、から構成される基板処理システムであって、
前記基板処理装置は、
前記基板を下面から吸着保持して回転させる回転保持部と、
前記回転保持部により基板が回転しているとき、前記基板の周縁部に前記膜を除去するための処理液を供給する処理液供給部と、
前記基板の周縁部を撮像する撮像部と、を備え、
前記情報処理装置は、
前記基板の膜の種別に関する情報を取得する取得し、複数の測定用設定の中から前記取得した膜の種別に対応する測定用設定を選択する制御部と、を備え、
前記測定処理装置は、
情報処理装置において選択された測定用設定を使用して前記撮像部に前記基板の周縁部を撮影するよう制御する制御部と、
を備えることを特徴とする基板処理システム。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016068204A JP6537992B2 (ja) | 2016-03-30 | 2016-03-30 | 基板処理装置、基板処理装置の制御方法、及び基板処理システム |
TW106107140A TWI686855B (zh) | 2016-03-30 | 2017-03-06 | 基板處理裝置、基板處理裝置之控制方法及基板處理系統 |
US15/454,269 US11011436B2 (en) | 2016-03-30 | 2017-03-09 | Substrate processing apparatus, control method of substrate processing apparatus and substrate processing system |
KR1020170029940A KR102274727B1 (ko) | 2016-03-30 | 2017-03-09 | 기판 처리 장치, 기판 처리 장치의 제어 방법, 및 기판 처리 시스템 |
CN201710142910.7A CN107275254B (zh) | 2016-03-30 | 2017-03-10 | 基板处理装置、基板处理装置的控制方法和基板处理系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016068204A JP6537992B2 (ja) | 2016-03-30 | 2016-03-30 | 基板処理装置、基板処理装置の制御方法、及び基板処理システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017183494A true JP2017183494A (ja) | 2017-10-05 |
JP6537992B2 JP6537992B2 (ja) | 2019-07-03 |
Family
ID=59959708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016068204A Active JP6537992B2 (ja) | 2016-03-30 | 2016-03-30 | 基板処理装置、基板処理装置の制御方法、及び基板処理システム |
Country Status (5)
Country | Link |
---|---|
US (1) | US11011436B2 (ja) |
JP (1) | JP6537992B2 (ja) |
KR (1) | KR102274727B1 (ja) |
CN (1) | CN107275254B (ja) |
TW (1) | TWI686855B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021197449A (ja) * | 2020-06-15 | 2021-12-27 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6611652B2 (ja) | 2016-03-30 | 2019-11-27 | 東京エレクトロン株式会社 | 基板処理装置の管理方法、及び基板処理システム |
KR102690577B1 (ko) * | 2018-02-13 | 2024-07-31 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
CN117912995A (zh) * | 2018-04-27 | 2024-04-19 | 东京毅力科创株式会社 | 基板处理系统和基板处理方法 |
JP7157816B2 (ja) * | 2018-10-23 | 2022-10-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP7261052B2 (ja) * | 2019-03-26 | 2023-04-19 | 株式会社Screenホールディングス | 基板処理装置およびその搬送制御方法 |
CN112097656A (zh) * | 2020-11-09 | 2020-12-18 | 西安奕斯伟硅片技术有限公司 | 晶圆背封薄膜边缘去除宽度的检测系统及检测方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134575A (ja) * | 2000-10-26 | 2002-05-10 | Sony Corp | 基板周縁検査方法、電子基板の製造方法および基板周縁検査装置 |
JP2006237063A (ja) * | 2005-02-22 | 2006-09-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2008091476A (ja) * | 2006-09-29 | 2008-04-17 | Olympus Corp | 外観検査装置 |
JP2013168429A (ja) * | 2012-02-14 | 2013-08-29 | Tokyo Electron Ltd | 液処理装置、液処理方法及び記憶媒体 |
JP2014109436A (ja) * | 2012-11-30 | 2014-06-12 | Tokyo Electron Ltd | 基板の欠陥検査方法、基板の欠陥検査装置、プログラム及びコンピュータ記憶媒体 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2141647C1 (ru) * | 1998-11-30 | 1999-11-20 | Войналович Александр Владимирович | Способ контроля анализируемой поверхности и сканирующий анализатор поверхности |
JP2000314710A (ja) * | 1999-04-28 | 2000-11-14 | Hitachi Ltd | 回路パターンの検査方法及び検査装置 |
JP2002286636A (ja) * | 2001-01-19 | 2002-10-03 | Advantest Corp | 化学物質検出方法及び装置 |
US7877161B2 (en) * | 2003-03-17 | 2011-01-25 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
DE10359722A1 (de) * | 2003-12-19 | 2005-07-14 | Leica Microsystems Semiconductor Gmbh | Verfahren zur Inspektion eines Wafers |
CN101493656B (zh) * | 2004-11-16 | 2010-12-08 | 东京毅力科创株式会社 | 曝光条件设定方法、衬底处理装置和计算机程序 |
JP5427609B2 (ja) * | 2006-12-19 | 2014-02-26 | ケーエルエー−テンカー・コーポレーション | 検査レシピ作成システムおよびその方法 |
JP5056582B2 (ja) * | 2008-05-22 | 2012-10-24 | 東京エレクトロン株式会社 | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
JP4703693B2 (ja) * | 2008-08-08 | 2011-06-15 | 株式会社東芝 | 露光方法、半導体装置の製造方法、及びマスクデータの作成方法 |
WO2010091307A2 (en) * | 2009-02-06 | 2010-08-12 | Kla-Tencor Corporation | Selecting one or more parameters for inspection of a wafer |
JP2013219248A (ja) * | 2012-04-10 | 2013-10-24 | Ebara Corp | 研磨装置および研磨方法 |
JP5835188B2 (ja) * | 2012-11-06 | 2015-12-24 | 東京エレクトロン株式会社 | 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体 |
JP6118102B2 (ja) * | 2012-12-21 | 2017-04-19 | 東京エレクトロン株式会社 | 基板位置検出装置及びこれを用いた基板処理装置、成膜装置 |
US9798317B2 (en) * | 2013-07-03 | 2017-10-24 | Tokyo Electron Limited | Substrate processing method and control apparatus |
US10840102B2 (en) * | 2013-11-27 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated system, integrated system operation method and film treatment method |
JP2015115486A (ja) * | 2013-12-12 | 2015-06-22 | 東京エレクトロン株式会社 | 液供給装置 |
US20150262848A1 (en) * | 2014-03-11 | 2015-09-17 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method for discharge of processing liquid from nozzle |
-
2016
- 2016-03-30 JP JP2016068204A patent/JP6537992B2/ja active Active
-
2017
- 2017-03-06 TW TW106107140A patent/TWI686855B/zh active
- 2017-03-09 US US15/454,269 patent/US11011436B2/en active Active
- 2017-03-09 KR KR1020170029940A patent/KR102274727B1/ko active IP Right Grant
- 2017-03-10 CN CN201710142910.7A patent/CN107275254B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134575A (ja) * | 2000-10-26 | 2002-05-10 | Sony Corp | 基板周縁検査方法、電子基板の製造方法および基板周縁検査装置 |
JP2006237063A (ja) * | 2005-02-22 | 2006-09-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2008091476A (ja) * | 2006-09-29 | 2008-04-17 | Olympus Corp | 外観検査装置 |
JP2013168429A (ja) * | 2012-02-14 | 2013-08-29 | Tokyo Electron Ltd | 液処理装置、液処理方法及び記憶媒体 |
JP2014109436A (ja) * | 2012-11-30 | 2014-06-12 | Tokyo Electron Ltd | 基板の欠陥検査方法、基板の欠陥検査装置、プログラム及びコンピュータ記憶媒体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021197449A (ja) * | 2020-06-15 | 2021-12-27 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP7473407B2 (ja) | 2020-06-15 | 2024-04-23 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
Also Published As
Publication number | Publication date |
---|---|
CN107275254A (zh) | 2017-10-20 |
KR102274727B1 (ko) | 2021-07-08 |
US11011436B2 (en) | 2021-05-18 |
KR20170113098A (ko) | 2017-10-12 |
US20170287704A1 (en) | 2017-10-05 |
TWI686855B (zh) | 2020-03-01 |
TW201801168A (zh) | 2018-01-01 |
JP6537992B2 (ja) | 2019-07-03 |
CN107275254B (zh) | 2021-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6611652B2 (ja) | 基板処理装置の管理方法、及び基板処理システム | |
JP6584356B2 (ja) | 基板処理装置及び基板処理装置の処理方法 | |
JP6537992B2 (ja) | 基板処理装置、基板処理装置の制御方法、及び基板処理システム | |
JP6254929B2 (ja) | 測定処理装置、基板処理システム、測定用治具、測定処理方法、及びその記憶媒体 | |
JP6562864B2 (ja) | 基板処理装置及び基板処理装置の調整方法 | |
JP6541605B2 (ja) | 基板処理装置、及び基板処理装置の撮像方法 | |
TW202402415A (zh) | 基板處理裝置及基板處理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180213 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190118 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190315 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190508 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190605 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6537992 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |