JP2017183456A - 半導体装置の製造方法及び製造装置 - Google Patents
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Abstract
Description
特許文献2:特開2010−232234号公報
前記半導体チップの第2主面にはバンプが形成され、前記基板の第1主面には電極パッドが形成されており、
(A)接着剤を介して前記バンプと前記電極パッドとを対向させた仮配置体を複数得る仮配置工程、と
(B)前記仮配置体における半導体チップの位置ズレを検査し、前記位置ズレが所定の範囲にない位置ズレ半導体チップを特定する検査工程、と
(C)前記位置ズレ半導体チップがあれば、当該位置ズレ半導体チップを移動させて位置を修正する位置修正工程、と
(D)前記仮配置体における半導体チップを加熱、加圧して、当該半導体チップの前記バンプと前記基板の前記電極パッドとを電気的に接続するとともに、前記接着剤を硬化させる接続工程、と
を備えたことを特徴とする半導体装置の製造方法を提供するものである。
体的には、熱硬化性の非導電性接着フィルム(NCF)である接着剤7は、その特性から定まる基準温度Ts未満の温度域においては硬化することなく、可逆的に温度上昇に伴って粘度が低くなる性質を示し、また、温度を低下させると粘度が高くなる性質を示す。一方、基準温度Ts以上の温度域においては硬化し、不可逆的に温度上昇に伴って粘度が高くなる性質を示す。つまり、一旦基準温度Ts以上に加熱すると温度が低下しても粘度が低下することはなく硬化状態となる。
化させる。具体的には、圧着ヘッド113を各仮配置体108の上方まで移動させ、次に圧着ヘッド113を仮配置体108に近づけ、半導体チップ104を加熱、加圧することにより行うことができる。
Claims (6)
- 半導体チップと、基板とを電気的に接続する半導体装置の製造方法であって、
前記半導体チップの第2主面にはバンプが形成され、前記基板の第1主面には電極パッドが形成されており、
(A)接着剤を介して前記バンプと前記電極パッドとを対向させた仮配置体を複数得る仮配置工程、と
(B)前記仮配置体における半導体チップの位置ズレを検査し、前記位置ズレが所定の範囲にない位置ズレ半導体チップを特定する検査工程、と
(C)前記位置ズレ半導体チップがあれば、当該位置ズレ半導体チップを移動させて位置を修正する位置修正工程、と
(D)前記仮配置体における半導体チップを加熱、加圧して、当該半導体チップの前記バンプと前記基板の前記電極パッドとを電気的に接続するとともに、前記接着剤を硬化させる接続工程、と
を備えたことを特徴とする半導体装置の製造方法。 - 半導体チップを積層した半導体装置を得る半導体装置の製造方法であって、
各半導体チップの第1主面には電極パッドが形成され、第2主面にはバンプが形成されており、
(A)半導体チップの第1主面を上にして当該半導体チップを仮基板上に複数配置する配置工程、と
(B)新たな半導体チップの第2主面に形成されたバンプと、前記仮基板上の半導体チップの第1主面に形成された電極パッドとを接着剤を介して対向させた仮配置体を複数得る仮配置工程、と
(C)前記仮配置体における新たな半導体チップの前記バンプと、当該バンプと対向する前記電極パッドとの位置ズレを検査し、前記位置ズレが所定の範囲にない位置ズレ半導体チップを特定する検査工程、と
(D)前記位置ズレ半導体チップがあれば、当該位置ズレ半導体チップを移動させて位置を修正する位置修正工程、と
(E)前記仮配置体における各半導体チップを一括して、加熱、加圧して半導体チップ間のバンプと電極パッドとを電気的に接続するとともに、半導体チップ間の接着剤を硬化させる接続工程、と
を備えたことを特徴とする半導体装置の製造方法。 - 前記仮配置工程(B)、前記検査工程(C)、前記位置修正工程(D)を複数回繰り返すことを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記接着剤は熱硬化性の非導電性接着フィルム(NCF)であり、前記位置修正工程(D)においては、前記接着剤が軟化する温度に加熱して当該位置ズレ半導体チップを移動させることを特徴とする請求項1〜3のいずれかに記載の半導体装置の製造方法。
- 前記バンプは少なくとも先端部分にはんだを有しており、当該バンプと対向する電極パッドとの間隙は、1μm〜5μmの範囲内であることを特徴とする請求項1〜4に記載の半導体装置の製造方法。
- 半導体チップの第2主面に形成されたバンプと、基板又は半導体チップ(以下、「基板等」という)の第1主面に形成された電極パッドとを電気的に接続する半導体装置の製造装置であって、
半導体チップを吸着して基板等上に移動させるとともに加熱、加圧して、基板等の第1主面に仮配置する吸着ノズルと、
前記半導体チップ及び前記基板等を撮像する撮像装置と、
前記基板等の第1主面に接着剤を介して積層された前記半導体チップを加熱、加圧して前記バンプと前記電極パッドとを電気的に接続するとともに前記接着剤を硬化させる圧着ヘッドと、
前記吸着ノズル、前記撮像装置、及び前記圧着ヘッドを制御する制御部と、を備え、
前記制御部は、
前記吸着ノズルを制御して、接着剤を介して前記バンプと前記電極パッドとを対向させて仮配置体を形成する仮配置処理部と、
前記撮像装置が撮像した画像に基づいて、前記仮配置体における半導体チップと前記基板等との位置ズレを検査し、位置ズレ半導体チップを特定する検査処理部と、
前記吸着ノズルを制御して、当該位置ズレ半導体チップを移動させて位置修正する位置修正処理部と、
前記圧着ヘッドを制御して、前記バンプと前記電極パッドとを電気的に接続するとともに前記接着剤を硬化させる接続処理部と、を有したことを特徴とする半導体装置の製造装置。
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JP2016067397A JP6613194B2 (ja) | 2016-03-30 | 2016-03-30 | 半導体装置の製造方法及び製造装置 |
CN201780032715.7A CN109155261B (zh) | 2016-03-30 | 2017-03-21 | 半导体装置的制造方法和制造装置 |
KR1020187027596A KR102227444B1 (ko) | 2016-03-30 | 2017-03-21 | 반도체 장치의 제조 방법 및 제조 장치 |
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KR20180128411A (ko) | 2018-12-03 |
CN109155261B (zh) | 2022-04-01 |
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