JP2017145482A - めっき装置およびめっき方法 - Google Patents
めっき装置およびめっき方法 Download PDFInfo
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- 238000007747 plating Methods 0.000 title claims abstract description 366
- 238000000034 method Methods 0.000 title claims description 92
- 239000000758 substrate Substances 0.000 claims abstract description 294
- 238000003860 storage Methods 0.000 claims abstract description 78
- 230000003028 elevating effect Effects 0.000 claims abstract description 27
- 230000032258 transport Effects 0.000 claims description 149
- 230000008569 process Effects 0.000 claims description 80
- 230000007246 mechanism Effects 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 53
- 238000005406 washing Methods 0.000 description 66
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 49
- 238000004140 cleaning Methods 0.000 description 42
- 239000000126 substance Substances 0.000 description 16
- 238000001035 drying Methods 0.000 description 11
- 239000012528 membrane Substances 0.000 description 7
- 238000011068 loading method Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000011010 flushing procedure Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/028—Electroplating of selected surface areas one side electroplating, e.g. substrate conveyed in a bath with inhibited background plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Abstract
【解決手段】被めっき領域を取り囲む形状を有する枠体と、被めっき領域を上方に向けた状態で基板の他方主面を支持しながら基板を枠体の下方位置に搬送する搬送部と、枠体に対して基板を相対的に上昇させて枠体と被めっき領域とでめっき液を貯留する貯留空間を形成する昇降部と、貯留空間にめっき液を供給する供給部と、被めっき領域に電気的に接続されるカソード電極と、貯留空間に貯留されためっき液に接液するアノード電極とを備え、昇降部および搬送部のうち少なくとも一方で基板の他方主面を下方から支持しながらカソード電極とアノード電極との間に電流を流してめっき処理を行う。
【選択図】図7
Description
62…枠体
63…昇降部
64,64A…めっき液供給部
68…給電部
622…スリット(排出部)
623…切欠(排出部)
631…バックアッププレート(昇降部材)
632…昇降機構
651…アノード電極
661…カソード電極
RA,RA1…貯留空間
S…基板
S1…基板の表面(一方主面)
S2…基板の裏面(他方主面)
SP…被めっき領域
Claims (8)
- 基板の一方主面の被めっき領域にめっき処理を施すめっき装置であって、
前記被めっき領域を取り囲む形状を有する枠体と、
前記被めっき領域を上方に向けた状態で前記基板の他方主面を支持しながら前記基板を前記枠体の下方位置に搬送する搬送部と、
前記枠体に対して前記基板を相対的に上昇させて前記枠体と前記被めっき領域とでめっき液を貯留する貯留空間を形成する昇降部と、
前記貯留空間にめっき液を供給する供給部と、
前記被めっき領域に電気的に接続されるカソード電極と、
前記貯留空間に貯留されためっき液に接液するアノード電極とを備え、
前記昇降部および前記搬送部のうち少なくとも一方で前記基板の他方主面を下方から支持しながら前記カソード電極と前記アノード電極との間に電流を流して前記めっき処理を行うことを特徴とするめっき装置。 - 請求項1に記載のめっき装置であって、
前記昇降部は、上下方向に昇降可能な昇降部材と、前記昇降部材を昇降させる昇降機構とを有し、前記昇降機構により前記昇降部材を前記搬送部より上方に移動させることで前記基板の他方主面を下方から支持しながら前記基板を前記搬送部よりも上方に移動させて前記貯留空間を形成するめっき装置。 - 請求項1または2に記載のめっき装置であって、
前記昇降部は前記枠体を下降させて前記貯留空間を形成するめっき装置。 - 請求項1ないし3のいずれか一項に記載のめっき装置であって、
前記枠体は前記貯留空間に貯留されためっき液を前記貯留空間から排出させる排出部を有するめっき装置。 - 請求項1ないし3のいずれか一項に記載のめっき装置であって、
前記昇降部は、前記枠体に対して前記基板を相対的に上昇させて前記貯留空間を形成するとともに前記枠体と前記基板の一方主面との間に隙間を形成して前記貯留空間に貯留されためっき液を前記貯留空間から排出させるめっき装置。 - 請求項5に記載のめっき装置であって、
前記めっき処理中において、前記昇降部および前記搬送部のうち少なくとも一方で前記基板を傾斜姿勢で支持するめっき装置。 - 請求項4ないし6のいずれか一項に記載のめっき装置であって、
前記供給部は前記貯留空間からのめっき液の排出と並行してめっき液を前記貯留空間に供給するめっき装置。 - 基板の一方主面の被めっき領域にめっき処理を施すめっき方法であって、
前記被めっき領域を取り囲む形状を有する枠体の下方位置に、前記被めっき領域を上方に向けた状態で前記基板の他方主面を下方から支持しながら前記基板を搬送部によって搬送する工程と、
前記枠体に対して前記基板を昇降部によって相対的に上昇させて前記昇降部および前記搬送部のうち少なくとも一方で前記基板の他方主面を下方から支持しながら前記枠体と前記被めっき領域とでめっき液を貯留する貯留空間を形成する工程と、
前記貯留空間に貯留されためっき液と前記被めっき領域との間に電流を流して前記めっき処理を行う工程と、
を備えることを特徴とするめっき方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016029468A JP6632419B2 (ja) | 2016-02-19 | 2016-02-19 | めっき装置およびめっき方法 |
PCT/JP2016/081539 WO2017141496A1 (ja) | 2016-02-19 | 2016-10-25 | めっき装置およびめっき方法 |
US15/998,934 US20210002781A1 (en) | 2016-02-19 | 2016-10-25 | Plating device and plating method |
TW105137876A TWI623997B (zh) | 2016-02-19 | 2016-11-18 | 鍍覆裝置及鍍覆方法 |
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JP2016029468A JP6632419B2 (ja) | 2016-02-19 | 2016-02-19 | めっき装置およびめっき方法 |
Publications (2)
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JP2017145482A true JP2017145482A (ja) | 2017-08-24 |
JP6632419B2 JP6632419B2 (ja) | 2020-01-22 |
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US (1) | US20210002781A1 (ja) |
JP (1) | JP6632419B2 (ja) |
TW (1) | TWI623997B (ja) |
WO (1) | WO2017141496A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111593381A (zh) * | 2020-05-09 | 2020-08-28 | 西北工业大学 | 制备中空件内壁Ni-SiC复合镀层的阳极装置 |
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WO2021130873A1 (ja) * | 2019-12-24 | 2021-07-01 | Ykk株式会社 | 電気めっきシステム |
Citations (3)
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WO2001068952A1 (fr) * | 2000-03-17 | 2001-09-20 | Ebara Corporation | Procede et appareil de plaquage electrolytique |
JP2004052108A (ja) * | 2002-05-30 | 2004-02-19 | Ebara Corp | 基板処理装置 |
JP2010238782A (ja) * | 2009-03-30 | 2010-10-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
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TW480580B (en) * | 1999-12-24 | 2002-03-21 | Ebara Corp | Method and apparatus for treating semiconductor substrate |
WO2004032214A1 (ja) * | 2002-10-07 | 2004-04-15 | Sekisui Chemical Co., Ltd. | プラズマ成膜装置 |
KR20140004761A (ko) * | 2011-03-18 | 2014-01-13 | 도쿄엘렉트론가부시키가이샤 | 성막 장치, 성막 방법, 유기 발광 소자의 제조 방법 및 유기 발광 소자 |
TW201435152A (zh) * | 2013-03-07 | 2014-09-16 | Clear Metals Inc | 於介電基材傳導性表面上形成透明金屬氧化物層之技術 |
TWM511501U (zh) * | 2015-01-13 | 2015-11-01 | jin-kun Guan | 智能電鍍掛具 |
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- 2016-02-19 JP JP2016029468A patent/JP6632419B2/ja active Active
- 2016-10-25 WO PCT/JP2016/081539 patent/WO2017141496A1/ja active Application Filing
- 2016-10-25 US US15/998,934 patent/US20210002781A1/en not_active Abandoned
- 2016-11-18 TW TW105137876A patent/TWI623997B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2001068952A1 (fr) * | 2000-03-17 | 2001-09-20 | Ebara Corporation | Procede et appareil de plaquage electrolytique |
JP2004052108A (ja) * | 2002-05-30 | 2004-02-19 | Ebara Corp | 基板処理装置 |
JP2010238782A (ja) * | 2009-03-30 | 2010-10-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111593381A (zh) * | 2020-05-09 | 2020-08-28 | 西北工业大学 | 制备中空件内壁Ni-SiC复合镀层的阳极装置 |
CN111593381B (zh) * | 2020-05-09 | 2022-04-19 | 西北工业大学 | 制备中空件内壁Ni-SiC复合镀层的阳极装置 |
Also Published As
Publication number | Publication date |
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JP6632419B2 (ja) | 2020-01-22 |
TW201731007A (zh) | 2017-09-01 |
US20210002781A1 (en) | 2021-01-07 |
TWI623997B (zh) | 2018-05-11 |
WO2017141496A1 (ja) | 2017-08-24 |
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