TW480580B - Method and apparatus for treating semiconductor substrate - Google Patents

Abstract

This invention relates to a semiconductor substrate processing apparatus and method for forming interconnects by filling a circuit pattern groove and/or a hole formed in a semiconductor substrate with an electroplated metal film, and removing the electroplated metal film while leaving the metal film at the filled portion. The apparatus comprises a carry-in and carry-out section for carrying in and carrying out a semiconductor substrate. This includes: a circuit formed on a surface thereof, in a dry state; a electroplated metal film forming unit for forming a electroplated metal film on the semiconductor substrate which has been carried in; a bevel etching unit for etching a peripheral edge portion of the semiconductor substrate; a polishing unit for polishing at least part of the electroplated metal film on the semiconductor substrate; and a transport mechanism for transporting the semiconductor substrate between the above units.

Description

4805,80 A7

Please read the notes on the back of δ before filling in this page 480580 I A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (2) | ^ The electroplated film 106 and the barrier layer 105 make the surface of the Cu electroplated film 106 filled in the contact hole 103 and the wiring groove] approximately the same as the surface of the insulating film 102. Thereby, the wiring formed by the Cu clock film 106 is formed as shown in FIG. Here, since the barrier layer 105 is formed to cover the insulating film 102 almost in its entirety, the seed layer 107 is formed to cover the barrier layer 105 almost in its entirety, as shown in FIG. 40 on the semiconductor substrate. The edge (outer peripheral portion) has a steel film that is the seed layer 107. Although not shown in the figure, the inner edge (outer peripheral portion) of the semiconductor substrate w has a copper film formed thereon and remains without grinding and removal. In a semiconductor process such as tempering, copper easily diffuses into the insulating film 102, making its insulation poor, and impairing the adhesion to the film to be formed next, because it can also cause peeling. At least the requirement for complete removal from the substrate before film formation. However, it is not only unnecessary to form a film or attach copper on the outer periphery of the substrate other than the part where the circuit is formed, and the subsequent steps of transportation, storage, and handling of the semiconductor substrate W may also cause cross-contamination. It is necessary to completely remove the copper after the film forming step or the CMP step. The outer periphery refers to a region where the edge and the outer edge of the semiconductor substrate W merge, or any part of the edge and the outer edge. The edge refers to the part of the front and back of the semiconductor substrate w which is about 5 mm from the outer peripheral end of the substrate, and the outer edge refers to the side portion of the semiconductor substrate W and the curved part of the wearing surface within 0.5 mm from the outer peripheral end. Serving. Defective 'In the Cu plating equipment for steel wiring and the polishing equipment for chemical mechanical polishing, individual substrates are installed in a dry state --- (Please read the precautions on the back before filling this page)-丨line.

-L --- I -n n H-The paper & degree applies the national standard (CNS) A4 specification (21 × 297 mm)

480580 V. Description of the invention (Into the dry state, the structure of the so-called dry in-dry ut. The constructor of the device is enabled in individual processing steps, such as plating or grinding, through the washing unit and the The spin-drying unit removes the particles and takes out the semiconductor substrate from individual devices in a dry state. In this way, since the electroplating device and the grinding device have many common steps, they should be continuous steps, and have the original cost and operation of the device. The cost becomes higher, the installation space required to install the two devices is large, and long processing time is required. At present, the driving force of semiconductor devices is gradually moving from digital workstations to workstations and personal computers. Mobile phones, mobile phones, digital cameras, DVDs, car navigation equipment, digital camcorders, etc.). At this moment, in the manufacturing of LSI, it is also necessary to move from general-purpose LSIs used in personal computers to digital information appliances. Changes in required system LSIs. Compared with general-purpose LSIs, these system LSIs have more varieties and are produced in smaller quantities. Features such as large dynamics and short product life. In addition, in order to reduce the cost of digital information appliances, the manufacturing cost of LSI must be reduced. In semiconductor manufacturing plants, the idea of large-scale production lines has also shifted to the pursuit of small-scale multiple types. Corresponding to this, future semiconductor device manufacturing will have a sensitive response to the needs of digital information appliances and machine manufacturers, and the requirements for online production as soon as possible, and due to intense changes in demand, there are The function can be flexibly changed or the requirements of the device can be updated. In the above-mentioned step of forming wiring with copper or copper alloy, the formation of the seed layer, the formation of the reinforcing seed layer on the seed layer for the purpose of reinforcing it, --- ---------- Shang -------- Order ----------- line (please read the notes on the back before filling this page) Finance, production • t labor cost and printing company's printed paper standard applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 3 312143 via: M ·, printed by the Ministry of Intellectual Property Bureau Consumer Consumption Cooperative 480580 Α7- —---- R7_______________ 5. Description of the invention (4) and the formation of wiring protection film, etc. There is an electroless plating device. In this electroless plating device, there is a unit that replaces the plating step and the processing step and washing step attached to the plating before plating. The proposal of an electroless plating device in which these processing steps are performed in a single unit. Figure 41 is a diagram showing the general structure of the electroless plating device. As shown in Figure 41, the electroless plating device is based on A cover 83 is provided around the semiconductor substrate w mounted and fixed on the holding mechanism 81 driven and driven by the motor%. If so, the semiconductor substrate is positioned at the position shown by the dotted line ... The plating solution is supplied to the center of the upper part of the semi-substrate W by a pump ρ, while the plating solution f is opened on the entire surface of the semiconductor substrate by a rotating centrifugal force, and the plating solution from the semiconductor substrate is removed from the cover 83 The plating solution recovery unit 85 is circulated back to the plating tank 87. In addition, ρ is a filtering device. On the other hand, the semiconductor substrate W after the termination of electricity is turned to the position shown by the solid line in FIG. 41, such as {, and washing water is supplied to the semiconductor substrate w from a washing water supply mechanism (not shown). Thereby, the plating solution is rinsed from the surface of the semiconductor substrate W, collected in the cleaning solution recovery unit 86, and discharged. However, the conventional electroless plating apparatus as described above has the following problems. (1) Since the plating surface of a semiconductor substrate is often dripped with a plating solution, a large amount of the plating solution must be recycled. And if a large amount of electroplating solution is circulated, a large pump needs to have a liquid temperature maintaining device due to the rise of the pump heating liquid temperature, which not only increases the cost of the device but also increases the size of the device, further ^ ϊϋ 巾 __57 ^ 4 ⑵G x 297 Public Love) ------------- Equipment · — (Please read the precautions on the back before filling in this page). · Line · h2! 43 480580 Ministry of Economic Affairs. ¾ Property ^ Printed A7 by the staff member's cooperative Fifth, the description of the invention (the cost of the clean room accommodating the device has also risen.) Due to the frequent circulation of the key fluid, on the principle of electroless plating, there are accumulation of by-products in the system It is impossible to maintain the safe recording process. In order to obtain a stable electroplating process, the analysis and adjustment of the electric money liquid becomes necessary, which leads to an increase in the cost of the equipment and an increase in the cost of the clean room. (3) Because of the electric money liquid A large number of recycled use 'easily generate particles from the components of each device, which promotes the necessity of installing a filtering device in the circulation path, leading to an increase in the cost of the device and an increase in the cost of the clean room. (4) If it is often only on the surface of the key Single-side supply of electric ore liquid -Electric ore is deposited on the surface. The thickness of the plating film in the part where the plating solution drips is thinner than the thickness of the plating film in other parts. A has been experimentally confirmed that the film thickness is poor in the surface. This is the 'plating solution dripping Some parts, compared with other parts, have different flow rates and thicknesses, so their reaction states are also different. (5) In order to perform electroless plating, the surface to be plated and electroplated must be The temperature of the reaction surface of the liquid is maintained at a fixed temperature. Therefore, there must be a mechanism that often raises a large amount of electroplating liquid to the optimal temperature of the electroplating reaction. Because of &, the cost of the equipment increases and the cost of the clean room increases. The mineral solution promotes the deterioration of the plating solution due to constant temperature rise. (6) Because the semiconductor substrate is often rotated, the stable temperature of the semiconductor substrate cannot be obtained due to the decrease in the exothermic temperature of the semiconductor substrate. The above it uses copper or steel alloy to form the wiring. Among the steps, in the substrate processing steps such as film formation and peeling of the substrate, there is a requirement to increase the film thickness, or control the film thickness at an arbitrary film thickness, etc., to improve the reliability of substrate processing. Special regulations ⑵. X 297 ^ 17 — II ------. I I ----- · I --------- (Please read the notes on the back before filling this page} 312143 480580 Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative 312143 A7 V. Invention description (6) Yes, the medium thickness of semiconductor wafers is in the range of tens of nanometers to several micrometers, so it is not so thin as the film thickness ㈣ No. From this point of view, 'the thickness measurement device is installed in the substrate processing device, and the cMp device (the chemical mechanical polishing device is embedded with a film thickness measurement sensor on the turntable for polishing the substrate, and the measurement is performed during polishing). However, when a film thickness measuring device is provided in the substrate processing device, it is necessary to take time to measure the film thickness during the substrate processing step to measure the film thickness. The problem of capacity. In addition, in order to provide another film thickness measurement device in addition to various devices for substrate processing, it is necessary to specifically reserve a space for the film thickness measurement device. Moreover, in the CMP device, as the film thickness is measured in the turntable, the sigh sensor is used to measure the film thickness. In order to grind the turntable, the sensor-embedded sensor mechanism becomes complicated, and more slurry is attached to the sensing device. In some cases, there is a problem that measurement becomes difficult. The above problems are not limited to sensors for measuring metal film thickness, sensors for detecting insulation film thickness (oxide film thickness), sensors for detecting the presence of metal thin films, and the presence or absence of particles on a substrate. The same applies to a sensor, a pattern recognition sensor and the like formed on a substrate. Generally speaking, in substrate processing equipment, not only to improve quality, but also from the viewpoint of productivity, it is also required to increase production capacity. Therefore, in order to respond to the requirements from both quality and productivity, the detection of the surface state of the substrate such as film thickness must also be performed in a series of actions in the manufacturing process without causing a decline in production capacity. [Summary of the invention] Table paper scale stab towel Guan Jiaxian (CNS) A4 specification ⑵〇 x 29.7 • Public Love)

J • Body II 1 --------------- I ----- (Please read the precautions on the back before filling out this page) 480580 _B7 V. Description of the invention For the above points, the purpose of the installation is to reduce the installation cost: the original cost and the operation cost, without the need for a large space for installation. It can be used for short periods of time to cause the cause of cross-contamination between circuit wiring and steel alloys. Edge, oblique preparation, plus 2 ... semiconductor substrate processing device and processing method for copper film residues adjacent to Fengma oblique angle. "The purpose of this month is to provide, such as the system LSI used in digital information appliances. Products with various small-volume production, large production quantity changes, and short product life can be used for small-scale manufacturing and have flexible function changes or device upgrades. They are well applicable to semiconductor substrate processing equipment for manufacturing production lines. The second purpose is to provide, can reduce the amount of electroplating solution, can maintain a stable electroplating process, can achieve the miniaturization and cost reduction of the device, can achieve the uniformity of the film thickness in the plane, and can prevent the temperature-induced Electroless plating method and device for deteriorating plating solution. Wisdom of the Ministry of Economics and Economics, 1% of the cost, printed by the cooperative, and the second purpose of the present invention is to provide, without causing a decrease in production capacity, during the handling or processing of substrates. A substrate processing device capable of detecting various surface states of a substrate, such as a simple and highly accurate film thickness, without stopping the handling or processing. In order to achieve the above-mentioned first object, the first aspect of the present invention is characterized by A semiconductor substrate having a circuit formed on its surface is provided with a carry-in and carry-out section in a dry state, a metal plating film forming unit that forms a metal plating film on the semiconductor substrate that has been carried in, and an etching method for etching the outer periphery of the semiconductor substrate. Bevel etching unit, and a polishing unit that grinds at least a part of the metal plating film on the semiconductor substrate, and the semiconductor substrate 312143 i A7 B7 V. Description of the invention (8) I plate is transported between the above units Conveying mechanism. According to the present invention, after the metal plating film is formed, the metal plating film at the edge portion and the beveled portion is removed. Further, the step of polishing the metal plating film on the semiconductor substrate can be continuously performed in a single device. The present invention is based on a semiconductor substrate having a circuit formed on its surface, and a semiconductor substrate having a circuit formed on the surface in a dry state. A metal plating film forming unit for forming a metal plating film on the semiconductor substrate, a bevel etching unit for etching the outer periphery of the semiconductor substrate, and at least a part of the metal plating film on the semiconductor substrate for polishing A unit and a transport mechanism that transports the semiconductor substrate to and from the unit, and the 'the metal plating film forming unit and the bevel etching unit can be replaced at will. Features of the present invention are provided on the surface. The semiconductor substrate of the circuit is carried out in a dry state, and a metal plating film forming unit for forming a metal plating film on the semiconductor substrate that has been carried in, and a metal plating film formed on the outer periphery of the semiconductor substrate, Bevel etch to remove at least one of the seed layer and the barrier layer Element, and the semiconductor substrate for tempering tempering unit, and wherein the semiconductor substrate in between said means for conveying the transfer means. The present invention is a metal plating film forming unit provided with a semiconductor substrate having a circuit formed on its surface in a dry state, and a metal plating film forming unit for forming a metal plating film on the semiconductor substrate that has been carried in. At least a part of the grinding unit for grinding the metal plating film on the substrate and the handling mechanism for transferring the above-mentioned semiconductor substrate between the above units, our specifications are applicable to the Chinese national standard specifications χ mm) 312143 8 A7 B7 V. Description of the invention G >) | At the same time, in the above-mentioned metal plating / film forming unit, the semiconductor substrate on the substrate holding portion is subjected to electroplating treatment and washing treatment | The present invention is a metal plating film forming unit that includes a semiconductor substrate with a circuit formed on its surface in a dry state, a carry-in and carry-out section, and a metal plating film forming unit on the semiconductor substrate that has been carried in. And a grinding unit that grinds at least a part of the metal plating film on the semiconductor substrate, and a transport mechanism that transports the semiconductor substrate between the units, and the metal electric film forming unit includes the semiconductor The substrate is held on the substrate holding portion, an anode disposed above the plated surface of the substrate, and a cathode that contacts and energizes the substrate. A water retention layer is disposed in a space formed between the plated surface and the anode. It is characteristic that the plating solution made of the material is impregnated with the material and electroplated.槔 The present invention is a metal plating film forming unit comprising a semiconductor substrate having a circuit formed on a surface thereof in a dry state, and a metal plating film forming unit for forming a metal plating film on the semiconductor substrate, and A polishing unit for polishing at least a part of the metal plating film on a semiconductor substrate, and a transport mechanism for transferring the semiconductor substrate between the units, and holding the semiconductor substrate on one side of the metal plating film forming unit The substrate holding portion is characterized in that the semiconductor substrate is raised and lowered corresponding to each operation position of the plating process, the washing process, and the drying process. The present invention is a metal plating film forming unit provided with a semiconductor substrate having a circuit formed on its surface in a dry state, and a metal plating film forming unit for forming a metal plating film on the semiconductor substrate that has been carried in. __ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 480580 A7

A7 Printed by the Ministry of Economic Affairs, Intellectual Property, Bureau, Employee-Consumer Cooperative, V. Invention Description (U) At the same time, while the above metal plating film forming unit is holding the semiconductor substrate with the key face up, the semiconductor The outer periphery of the plated surface of the substrate is sealed with a sealing material in a watertight manner, and the anode is arranged close to the surface of the electric clock. The cathode is in contact with the substrate and is energized. The surface holds the plating solution on the surface. The watertight sealed space between the plating surface and the anode is characterized by electroplating on one side. The invention relates to a metal plating film forming unit provided with a loading and unloading unit for loading and unloading a semiconductor substrate having a circuit formed on its surface in a dry state, and forming a metal plating film on the loaded semiconductor substrate, and the semiconductor At the same time as the grinding unit for grinding at least a part of the metal electric film on the substrate, and the transport mechanism for transferring the semiconductor substrate between the units, and the metal plating film forming unit can be subjected to pretreatment and plating treatment. And water washing treatment. In the present invention, a barrier layer forming unit is provided which includes a carry-in and carry-in unit that carries a semiconductor substrate with a circuit formed on its surface in a dry state, and a barrier layer that forms a barrier layer on the semiconductor substrate that has been carried in, and A seed layer forming unit that forms a seed layer on the barrier layer, a metal plating film forming unit that forms a metal plating film on the seed layer, and an oblique angle that removes the metal film formed on the edge portion of the semiconductor substrate Etching unit, and tempering unit for tempering the above metal plating film, grinding unit for polishing the metal plating film and / or seed layer on the semiconductor substrate, and the semiconductor for polishing the metal plating film Substrate washing strip, dry washing unit, cover plating unit that forms a covered plating film on a metal plating film, and a transport mechanism for transporting the semiconductor substrate, and the above barrier film formation single paper size is applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Installation. 丨 Line · 480580 A7 I ------- B7 —_ V. Outline of the Invention (12) ^ -1 70 'and the seed layer film forming unit, and the metal plating film forming unit, and the bevel etching unit, and the tempering unit, and the grinding unit, and the wire unit, And the above covered plating unit can be replaced freely for it ^

feature. I By forming a semiconductor substrate processing device as described above, grooves and / or holes for wiring patterns are formed on the surface, and a semiconductor substrate having a barrier layer and a power supply seed layer is formed on the surface, and metal plating is applied to the semiconductor substrate. The metal plating film is polished and removed. The process of washing and drying to form the circuit wiring can be performed continuously in a single device. Compared with the individual device for each processing step, the overall miniaturization is not necessary. | Large installation space is required, which can reduce The original cost of the device, the cost of operation, and the ability to form circuit wiring within a short processing time. The present invention is based on a groove or groove printed on the surface and / or printed or perforated by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A semiconductor substrate on which a barrier layer is formed is carried out in a dry state, a carry-in and carry-out section, and a seed layer film-forming section for forming a power supply seed layer by electroless plating on the semiconductor substrate that has been carried in, and The metal substrate of the power supply seed layer is electroplated to form a metal plating film, and a metal plating film forming portion is formed, and gold is formed. Metal plating film of the semiconductor substrate of the plating film, which is filled in the grooves and / or holes, and the polishing part of the power supply seed layer and the barrier layer, which is removed by grinding, and washing and drying of the semiconductor substrate from which each layer has been removed And a substrate processing apparatus characterized by a transfer mechanism that transfers semiconductor substrates between the various sections. By forming the semiconductor substrate processing device as described above, grooves and / or holes for wiring patterns are formed on the surface, and a semiconductor substrate with a barrier layer formed thereon, and a power supply seed layer and a metal plating film are applied to the power supply seed layer. And this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^ --- 1 312143

V. Description of the invention (u)

The wisdom of the Ministry of Economic Affairs, the property% ^-Cooperative cooperatives printed M metal, grinding, removal, washing, drying and forming circuit wiring can be carried out continuously in the early stage, compared to individual processing steps. The overall miniaturization does not require a large installation space, which can reduce the original cost and operating cost of the device, and can form circuit wiring in a short processing time. The invention is based on a barrier layer having a trench and / or a hole for forming a wiring pattern on the surface of the semiconductor substrate and carrying out the semiconductor substrate in a dry state, and a barrier layer for forming a barrier layer on the semiconductor substrate that has been moved in. A film forming section, and a seed layer film forming section for forming a power supply seed layer by electroless plating on a semiconductor substrate having a barrier layer formed thereon, and a metal for forming a metal plating film by electrolytic plating on the semiconductor substrate having the power supply seed layer formed Plating film forming portion, and metal plating film other than the portion filled with grooves and / or holes of the semiconductor substrate on which metal plating plate is formed, a polishing portion for polishing and removing the power supply seed layer and the barrier layer, and each layer The removed semiconductor substrate washing and drying washing section, and a substrate processing apparatus characterized by a transfer mechanism for transferring semiconductor substrates between the sections. By forming the semiconductor substrate processing device as described above, a semiconductor substrate having grooves and / or holes for wiring patterns formed on the surface is provided with a barrier layer, a power supply seed layer, and a metal plating film, and the barrier layer and the power supply seed layer are applied. And the process of grinding, removing, washing, and drying the circuit wiring of the metal electric clock film can be continuously performed in a single device. Compared with the individual device for each processing step, the overall miniaturization does not require a large installation space, which can reduce the originality of the device. Cost, operation cost, and can form circuit wiring in short processing time. 0 ------------- installation -------- order --------- line ( (Please read the notes on the back before filling out this page)

480580 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (w) The present invention is a film thickness measurement unit for measuring the thickness of a metal plating film after the formation of the metal plating film and measuring the remaining film after grinding and removal The residual film measurement section is also provided with a recording mechanism for recording the measurement results of the film thickness measurement section and the residual film measurement section. In the present invention, a film thickness measurement section for measuring the film thickness of each layer is provided, and the original film thickness of each layer is measured. The measurement result is recorded in a recording mechanism. The film thickness measurement section and the rest are set by setting the recording mechanism as described above. The film thickness of the inner part of the film measurement, the original film thickness of the remaining film and each layer are recorded and can be used to determine the processing time for the subsequent steps, the quality of each processing step, and the circuit wiring formation process. The quality of the semiconductor substrate is complete. The present invention relates to a metal plating unit provided with a loading and unloading unit for loading and unloading a groove and / or a hole for wiring patterns formed on a surface of a semiconductor substrate in a dry state, and a metal plating unit for forming a metal plating film on the loaded semiconductor substrate, and A polishing unit for grinding the metal plating film on the semiconductor substrate, a washing unit for washing and drying the semiconductor substrate on which the metal plating film has been polished, and a transport mechanism for transferring the semiconductor substrate, and a metal plating unit and a washing unit The system structure can be replaced with a semiconductor substrate processing device with its characteristics. Since the metal electric money unit and the washing unit are constructed as described above, they can be easily replaced and can easily respond to changes in the substrate processing process, and the overall function of the substrate processing device can be updated in a short time and at a low cost. The invention is provided with the edge (bevel) to be formed on the semiconductor substrate as far as possible. It applies the Chinese National Standard "CNS" A4 (210 X 297).

14 312143 Install -------- Order ---------- Line (Please read the precautions on the back before filling this page) 480580 A7

Note I I I I 312143 Please read the back item before filling in this page k tr 15

H-OUJOU H-OUJOU B7 V. Description of the Invention (16 I film-forming unit is its feature. By integrating the seed-layer film-forming unit and the plating unit, it can save the time of moving between the devices, increase the production capacity, and at the same time The film is formed under no pollution. The present invention is characterized by a barrier layer film forming unit having a barrier layer formed on a semiconductor substrate.

I. By integrating the barrier film-forming unit and the key unit, it can save the time of moving between devices and increase the productivity. The present invention 'is characterized by having a cover plating unit. Since the cover plating unit is provided as described above, the cover plating can be yoke on the metal plating film to prevent oxidation and deterioration, and the oxidation and deterioration on the metal plating film can be prevented. The invention of the present invention is a metal plating sheet π including a loading and unloading section for loading and unloading a trench and / or a hole for wiring patterns formed on a surface of a semiconductor substrate in a dry state, and a metal plating film for forming a metal plating film on the semiconductor substrate that has been loaded. And a polishing unit for polishing the metal plating film on the semiconductor substrate, a green washing unit for washing and drying the semiconductor substrate on which the metal plating film has been polished, and a transport mechanism for transferring the semiconductor substrate, and a metal plating unit A cathode portion including a substrate holding portion holding a substrate with a plated surface facing upward, an electrode 孑 portion having an anode disposed above the cathode portion, and a plated substrate in which a plating solution is injected and held on the substrate holding portion A semiconductor substrate processing device characterized by a plating solution injection mechanism in a space between a surface and an anode near an electrode arm portion of the surface to be plated. ^ __ The cathode part of the metal plating unit, because it has the substrate to be plated, the paper size applies the Chinese National Standard (CNS) A4 specification (2iCU 297 public love) 16 312143 Ministry of Economic Affairs. ¾ property ^ item workers β fee cooperative Printed 480580 A7 I —----- 1— __ i 5. Description of the invention) The substrate holding part which is held horizontally upwards, electroplating treatment and other treatments such as hoe treatment and washing and drying treatment attached to the electroplating treatment can be used. Perform before and after the plating process. The present invention is a metal plating sheet 70 provided with a loading and unloading section for loading and unloading a groove and / or a hole for wiring patterns formed on a surface of a semiconductor substrate in a dry state, and forming a metal plating film on the semiconductor substrate that has been loaded, And a polishing unit that grinds the metal plating film on the semiconductor substrate, and a metal washing unit that cleans and dries the polished semiconductor substrate, and a transport mechanism for transferring the semiconductor substrate, and the metal plating unit can It is a semiconductor substrate processing device featuring precoating, plating, and water washing. As mentioned above, the metal plating unit can be used for pre-coating treatment, electroplating treatment, and water washing treatment, especially the water washing treatment after plating treatment is carried out in the metal-electric mining unit, so there is no need to bring the plating solution into other units. The present invention is a film formed by a barrier layer having a trench and / or hole for forming a wiring pattern on a surface of a semiconductor substrate and carrying in and out in a dry state, and a barrier layer forming a barrier layer on the semiconductor substrate that has been carried in. Unit, a seed layer film-forming unit that forms a seed layer on the barrier layer, a metal plating unit that forms a metal plating film on the seed layer, and a bevel etching that removes the metal film formed on the edge portion of the semiconductor substrate A unit, and a tempering unit for tempering a metal plating film, a grinding unit for grinding the metal plating film and / or a seed layer on a semiconductor substrate, and a semiconductor substrate for washing and drying the polished metal substrate for the metal plating film Washing and drying unit, electroplating unit forming a plating film on a metal plating film, and semi-conducting paper rule t are applicable to the seven national standards (CNS) A4 specifications (210 x 297 mm) Ή2143 ^ ---- ---- ^ ------,-line (please read the precautions on the back before filling this page) 480580 A7 V. Description of the invention) The transport mechanism of the body substrate, and the barrier film-forming unit and seed Forming unit, a metal plating cell, the bevel etching unit, a tempering unit, the grinding unit, washing unit and the cover unit can be replaced with ease its plating characteristics. As mentioned above, since each unit system structure can be replaced freely, various changes in the substrate processing process can be easily coped with, and the overall function of the substrate processing device can be updated in a short time at a low cost. In the present invention, “a groove and / or a hole for a wiring pattern is formed on the surface of the semiconductor substrate, and a semiconductor substrate having a barrier layer formed thereon is carried out in a dry state. A power supply seed layer is formed thereon, and a metal plating film is formed thereon. A metal plating film other than a portion of the semiconductor substrate on which the metal plating film has been filled in the trenches and / or holes, a power supply seed layer, and a barrier layer Grinding and removing, after washing and drying the semiconductor substrate from which each layer has been removed, transfer it to the above-mentioned semiconductor substrate processing method characterized by the above-mentioned loading and unloading mechanism in a dry state. By performing the semiconductor substrate processing method as described above on the surface, A trench and / or hole for a wiring pattern is formed, and a semiconductive economic jtn I body substrate with a barrier layer formed thereon, a power supply seed layer and a metal plating film are applied, and the power supply seed smart layer and the metal plating film are formed. Grinding removal 'Washing and drying to form circuits and property lines can be processed For continuous operation, it is possible to form a circuit with a staff line in a short period of time. Consumption of the present invention is to use a half of the wiring pattern and / or hole 1 on the surface; the printed conductor substrate is carried out in a dry state. The moving-in mechanism moves in 'to form a barrier layer on the semiconductor substrate that has been moved into π, and a power supply seed layer thereon. National Paper Standard (CNS) ^^ ⑵〇X 297 mm) 48058,0 A7

19 312143 48〇58〇 A7 B7 V. Description of the invention (M) The electroless plating treatment liquid is applied to the above-mentioned substrate on the clock surface. The step of contacting a portion of the electroless plating treatment liquid supplied to the electroplated surface of the substrate with the entire surface of the keyed surface is to move the substrate [ie, for example, to rotate the substrate supplied with the electroless plating treatment liquid ' Or make it shake, or oscillate, etc.], or make the supplied electroless microscopy fluid move [by using a uniform part, etc., or blowing on the liquid surface, etc.]. The present invention is to perform the step I of electroless bonding by holding the above-mentioned electroless ore treatment liquid at a selected time dimension | holding on the surface of the substrate to be electrolyzed, and to make the substrate in a static state. feature. Compared with the case of burying the substrate while rotating it on one side, this structure does not generate heat due to the rotation speed of the substrate, can achieve uniformity of the reaction temperature of each part, and obtain a stable process. The present invention is characterized in that the surface to be plated after being treated with the above-mentioned electroless plating treatment solution is injected and washed with a washing solution, and then spin-dried. According to the present invention, in the electroless plating method in which an electroless plating treatment solution is brought into contact with a plated surface of a substrate and the plated surface is processed, the temperature of the substrate is heated to be higher than the temperature of the electroless plating treatment. In the state, the electroless plating treatment liquid is wetted on the plated surface of the substrate and / or the temperature of the surrounding gas in which the electroless plating is performed is approximately equal to the temperature of the electroless plating process, and the electroless plating is performed on the plated surface of the substrate. The treatment liquid is characterized by its wet-out. In such a configuration, the heating of the plating solution, which is necessary for a large amount of power consumption during heating, need not be so large, and reduction in power consumption and prevention of changes in the composition of the recording liquid can be obtained. The present invention is provided with a clothing paper ruler / i ". in application 015 ^: standard (CNS) A.I specification ⑺ () > <? 97 ου

V. Description of the invention (η) The mouth holding mechanism, and the plating surface to be held on the substrate of the holding mechanism, the plating solution maintenance mechanism preferably surrounding the plating solution, and the plating solution supply accumulation ^, the plating solution maintenance mechanism The electroless plating treatment liquid supply mechanism of the plated surface of the sealed substrate is characterized by it. This electroless plating device can be used as a non-electrolytic plating treatment liquid instead of a tritium treatment solution, a catalyst treatment solution, an electroless plating solution, etc., and a series of electroless plating steps can be implemented in a single tank. X-Consumer Co., Ltd. printed this invention 'is equipped with a holding mechanism for holding a substrate with a plated surface facing upward, and an electroless plating treatment liquid supply mechanism for supplying an electroless electroplating treatment liquid to a plated surface of the substrate, The above-mentioned electroless plating treatment liquid supply mechanism is characterized in that the electroless plating treatment liquid is provided on the surface to be plated and dispersedly supplies the electroless plating treatment liquid. Thereby, the processing liquid can be supplied to the entire plated surface of the substrate substantially uniformly at the same time. The present invention is characterized in that a heating mechanism is provided near the substrate. As the heating mechanism, for example, a bottom surface heater for heating the key surface from the bottom surface side of the substrate, or a heating lamp for heating from the top surface side of the substrate may be provided. ♦ In order to achieve the above-mentioned third object, the third aspect of the present invention is a substrate processing apparatus for carrying or processing a substrate in a state where the substrate is held by the above-mentioned substrate holding mechanism in a substrate holding mechanism having a holding substrate. A sensor for detecting a surface state of a substrate such as a metal film thickness at the substrate holding mechanism described above is characterized by detecting a state of the substrate surface based on a signal detected by the sensor during substrate transportation or processing. With this, the thickness of the metal film of the substrate can be detected without stopping or interrupting the substrate processing steps ----------------- (Please read the precautions on the back before filling in this page ) Order. · • 丨. A7 I-- ~ ----_____ 5. Description of the invention) The surface state of the substrate can realize high productivity while detecting the surface state of the substrate. In addition, the present invention uses a substrate holding mechanism with a holding substrate, and in a substrate processing apparatus for carrying or processing a substrate in a state in which the substrate is held by the substrate holding mechanism, a substrate holding mechanism for detecting the substrate holding mechanism is used to detect the substrate holding mechanism. Or, a sensor for the state of the substrate surface close to a selected position of the substrate during processing is characterized by detecting the state of the substrate surface using a signal detected by the sensor when the substrate approaches the substrate. Here, the above-mentioned sensor is preferably movable, and ideally, the distance between the substrate and the sensor can be arbitrarily set according to the purpose of detection. In addition, the present invention is based on a substrate holding mechanism having a substrate holding mechanism and a substrate processing module for processing the substrate. The substrate is configured so that the substrate held by the substrate holding mechanism can be moved into and out of the substrate processing device of the substrate processing module. The substrate of the processing module is moved in and out, or near the substrate processing position in the substrate processing module. A sensing benefit for detecting the surface state of the substrate is provided when the substrate is moved in or out of the substrate processing module or at the substrate processing module. The internal processing substrate timing is characterized by detecting the surface state of the substrate based on the signal from the sensor. As the above-mentioned sensor, the sensor is not limited to a sensor for measuring the thickness of a metal film, and a sensor for detecting an insulation film thickness (oxide film thickness), a sensor for detecting the presence or absence of a metal thin film, Sensors for detecting the presence or absence of particles, sensors for pattern recognition formed on a substrate, and other sensors for detecting the surface state of various substrates. [Brief description of the drawings]-Shredded binding ---------- (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297) 2222 312143 Α7 B7 V. Description of the invention (η)-Figures 1A to 1C are schematic diagrams of circuit wiring formed on a semiconductor substrate. Figure 2 is a diagram showing a planar structure example of a semiconductor substrate processing apparatus according to the present invention. Fig. 3 is a diagram showing a schematic configuration example of a top ring portion of a polishing table of a semiconductor substrate processing apparatus according to the present invention. Fig. 4 is a diagram showing a schematic configuration example of a washing machine of a semiconductor substrate processing apparatus according to the present invention. Fig. 5 is a diagram showing a schematic configuration example of a polishing platform washer of a semiconductor substrate processing apparatus according to the present invention. Figs. 6A to 6 (^) are diagrams showing a robot of a semiconductor substrate processing apparatus according to the present invention. Fig. 6A is a diagram showing an appearance, Fig. 6B is a top view of a robot arm, and Fig. 6C is a cross-sectional view of a robot arm. Fig. 7 is a € 1 showing a semiconductor substrate processing apparatus related to the present invention. 1 A diagram of a planar structure example of a plating film forming unit. FIG. 8 is a cross-sectional view of Aa in FIG. 7. FIG. 9 is a diagram showing a substrate holding portion and a cathode of a Cil plating film forming unit of a semiconductor substrate processing apparatus according to the present invention. Fig. 10 is a diagram showing a cross-sectional structure of an electrode arm portion of a Cu plating film forming unit of a semiconductor substrate processing apparatus according to the present invention. Fig. 11 is a diagram showing another embodiment of the present invention. A schematic diagram of the anode and the electric mineral liquid impregnating material. ^ Figure 12 shows that the anode and the electrical scale in other implementations of the present invention are suitable for the Tfi National Standard (CNS) A4 specification (21ϋ x 297 public love) --- -(Please read the precautions on the back before filling this page) Installation.-Line · 312143 480580 A7 B7 V. Description of the invention (24) Schematic drawing of the impregnating material for the plating solution. Figure 13 shows the semiconductors related to the present invention. FIG. 14 is a diagram showing a planar structure example of a substrate processing apparatus. FIG. 14 is a diagram showing a planar structure example of a semiconductor substrate processing apparatus according to the present invention. FIG. 15 is a diagram showing a planar structure of a semiconductor substrate processing apparatus according to the present invention. FIG. 16 is a diagram showing an example of a planar structure of a semiconductor substrate processing apparatus according to the present invention. FIG. 17 is a diagram showing a flow of steps in the semiconductor substrate processing apparatus shown in FIG. 16. FIG. 18 is a diagram FIG. 19 is a diagram showing an example of a schematic planar configuration of an aligner and a film thickness measuring device of a semiconductor substrate processing apparatus according to the present invention. FIG. 19 is a diagram showing an outline of an aligner and a film thickness measuring device of a semiconductor substrate processing apparatus according to the present invention. A diagram of a side structure example. Fig. 20 is a diagram showing the operation of the semiconductor substrate in the aligner and film thickness measuring device shown in Figs. 18 and 19. Fig. 21 is a diagram showing the semiconductor substrate processing according to the present invention. This is a diagram showing an example of a structure of a bevel and a side surface of a bottom washing unit. Figures 22A to 22D are diagrams showing examples of a platen structure of each loading unit of a semiconductor substrate processing apparatus according to the present invention. 23A and 23B are diagrams showing an example of a schematic front structure of each loading unit of a semiconductor substrate processing apparatus according to the present invention. Figures 24A and 24B show the semiconductor substrates related to the present invention (please read the note on the back before filling out this page) 丨 Install sound book --- V ------ line ----- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 24 312143

V. Description of the Invention (25 A diagram of an example of a schematic frontal structure of each loading unit of the processing device. Figure 25 is a diagram showing a planar structure example of a semiconductor substrate processing device according to the present invention. Figures 26A to 26C show plating Schematic diagram of an example of a step. FIG. 27 is a schematic configuration diagram of an electroless plating device used in one embodiment of the present invention. FIG. 28 is a diagram of an electroless plated in another embodiment of the present invention. 29A and 29B are diagrams showing the results of measuring the film thickness of a non-electrolytically plated semiconductor substrate according to the methods of the present invention and conventional examples. FIG. 30 is a diagram showing the present invention Top view of an example of an electroplating device used. Fig. 31 is a top view of an example of a CMP device used in the present invention. Fig. 32 is a view of an example of an electroplating and CMP device used in the present invention. Fig. 33 shows transportation A perspective view of a robot. Figs. 34A and 34B are diagrams of a robot hand mounted on a transfer robot, Fig. 34A is a top view, and Fig. 34B is a side sectional view. Figure 35B and Figure 35B show the diagram of the handling robot used in the present invention, Figure 35A is a schematic top view, Figure 35B is a schematic side view ^ Figures 36A and 36B are diagrams showing examples of the present invention, and Figure 36A The drawing is a schematic top view, and Fig. 36B is a schematic side view. --1 ------------------- Order · --------- (Please read first Note on the back, please fill in this page again) Printed by the Ministry of Economic Affairs • Wisdom • Property-Bureau X-Consumer Cooperatives The paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 25 312143 480580 V. Description of the invention (26) Figure 37 is a schematic front view of the vicinity of the turning machine used in the present invention. Figure 38 is a top view of the turning arm part. View Figure 39 is a section of the main part of the electroplating module used in the present invention. Fig. 40 is a diagram showing the remaining state of the seed layer and the barrier layer of the beveled portion of the semiconductor substrate that has been subjected to CMP without beveled etching. Fig. 41 is a schematic configuration diagram of a conventional electroless plating device. Fig. 42 is a schematic configuration diagram of an electrolytic plating apparatus according to the present invention. Fig. 43 is a diagram related to the present invention. FIG. 44 is a schematic configuration diagram of an electrolytic plating apparatus according to the present invention. FIG. 45 is a plan view of an electrode portion of an electrode arm shown in FIG. 10 with a cover removed. _ Fig. 46 is a schematic plan view showing the state of the plating solution completely spreading toward the plated surface of the substrate when the electroplating is performed using the € 11 electroplating film shown in Fig. 10 | | 47A And FIG. 47B is a schematic plan view showing the state of the variation f of FIG. 40 individually.

Fig. 48 is a schematic structural diagram of an electrolytic plating apparatus used in an embodiment of the present invention. This paper scale—China® Home Standard (CNS) A. ^ l specification ⑵0x297 was viewed 26 312143 A7 V. Description of the invention) ^ Δ ^ 9 The figure shows the part near the outer periphery of the impregnating material of the plating solution of the electrolytic plating device. The outline of the main part. Brother 5 〇 Α circle λ 铉 c λ h a. · A _. ^, Figure. Figure 50A and Figure 50b are equivalent circuit diagrams showing the electricity of the electrolytic treatment device used in the electrolytic plating device of the present invention. Figure 51 shows another embodiment of the present invention. [Description of component symbols] 1 Loading and unloading section 1-1 Wafer cassette 2 Cu electroplating film forming unit 2-1 Substrate processing section 2-2 Plating bath 2-3 Rotating shaft 2-4 Swing arm 2-5 Electrode 2 -6 Electrode arm part 2-7 Recovery arm 2-8 Fixed nozzle 2-9 Substrate holding part 2-10 Cathode part 2-11 Cup 2-12 Air tube 2-14 Rotating motor 2-15 Belt 2-16 Sealing part 2 -17 Proximity to contact 2-18 Housing economy 2-19 Hollow support frame 2-20 Anode wisdom 2-21 Suction chamber 2-22 Electroplating liquid impregnated material-Property 2-25 Fixing pin 2-26 Leaf spring • round_ Member X 2-28 Plating solution introduction tube 2-30 Plating solution column-Consumption 2-31 Symbol 2-32 Connecting pipe combination 2-33 Pipe company 2-34 Printing of the electrolyte channel part 2-35 Insulating part 2-36 Seal

312143 ---------------------- Order --I ------ (Please read the precautions on the back before filling this page) 480580 Wisdom of the Ministry of Economic Affairs Printed by A7, B7, Consumer Cooperative of the Property Bureau. V. Description of Invention (28) 2-37 Plating Power Supply 3 First Robot 3-1 Robot 3-2 Robot Arm 4 Third Washing Machine 5 '6 Turning Machine 7 Second Washing Machine 8 Second robot 9 First washing machine 9-1 Symbol 9-2 Foam 9-3 Ultrasonic vibration element 9-4 Nozzle 10 First polishing device 10-1 Polishing platform 10-la Polishing surface 10-2 Top ring 10 -3 Top ring head 10-4 Film thickness measuring machine 10-5 Thruster 10-6 Nozzle 10-7 Temperature control benefit 10-8 Eddy current film flow film thickness measuring machine 10-9 Optical film thickness measuring machine 10- 10 Corrector 10-11 Nozzle 11 Second polishing device 11-1 Grinding platform 11-la Grinding surface 11-2 Top ring 11-3 Top ring head 11-4 Film thickness measuring machine 11-5 Pusher 12 Film thickness measuring machine (Before and after plating) 13 Film thickness measuring machine (dry state) 13a Current sensor 14 Nitrogen supply 15 Pure water supply 16, 17 Regulator 18, 19 Air operated valve 21 > 22 Substrate mounting table 23 Robot (No. 2 Robots) 24 machines Human (3rd robot) 25 Thruster indicator 26 Film thickness measuring machine 27 Seed layer film forming unit 27-1 Loading port 28 Fluid piping This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 28 312143 ^ —.1 u US n fli · n * n Xu mi— 1 au I mn fn n II flu Tfl ϋ m I i «lnmm 1 (Please read the precautions on the back before filling this page) 480580 A7 B7 V. Description of the invention (29) Printed by the Ministry of Economic Affairs of the Ministry of Economics and Wisdom Co., Ltd.-Industrial Cooperatives 102 Insulation film 103 Contact hole 104 Wiring trench 105 Barrier layer 106 Cu plating film 107 Seed layer 111 Barrier layer film Unit 112 Seed layer film forming unit 113 Plating film forming unit 114 Tempering unit 115 First washing unit 116 Bottom washing unit 117 Cover plating unit 118 Second washing unit 120 Loading and unloading unit 121 First polishing device 122 Second polishing device 131 1st robot 132 2nd robot 133 3rd robot 134 4th robot 141 1st aligner and film thickness measurement 142 2nd aligner and film thickness measurement machine 142-1 Optical micro sensor 142-2 Lifter 142- 3 Eddy current sensor 1 42-4 Vacuum chuck 142-5 Swivel joint 142-6 Vacuum 142-7 Motor 142-8 Arm 142-9 Motor 142-10 Actuator 142-11 Temporary stage 143 First substrate turning machine 144 Second substrate turning machine 145 Substrate temporary table 146 Third film thickness measuring machine 220 Waterproof cover 221 Spin chuck 222 Substrate holding section 224 Central nozzle 226 Edge nozzle 228 Back nozzle 300 Platen 301 Substrate processing unit 302 Guide 303 Guide rod Paper ruler f Applicable standards are entered by the country S, CNS) A ”Grid X 297 crossbow, (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, 5 --1 --- --- ~ — Description of the invention (3〇) Α7 Β7 304 Αλτ Same as 305 306 Bottom 307 308 Screw 311 315 Bottom heater 331 341 Wetting head 351 353 Charged surface 365 401 First plating film forming unit 402 403 Bevel and bottom washing unit 404 405 Aligner and film thickness measuring unit 406 407 Second robot 408 409 Pointer 410 411 Chemical liquid supply unit 412 413 Touchpad 414 [Detailed description of the preferred embodiment] Upper bottom. Groove Retaining mechanism weir Washing liquid supply mechanism Plating liquid recovery nozzle Second plating film forming unit Tempering unit First robot loading and unloading section Wafer box electro-graphing unit Supply and exhaust pipes Below, based on Figures 2 to 25 and 42 Going to Fig. 51, Goming shows the first state of the present invention. Fig. 12 is a diagram showing the first aspect of the present invention: a planar structure of a semiconductor substrate processing apparatus. The conductive substrate processing device of the present invention is configured with a loading and unloading part hCu electroplating film forming unit 2, a first robot 3 ', a third washing machine 4, a turning machine 5, a turning machine 6, a second washing machine 7' second The robot 8, the first washing machine 9, the first polishing device 10 and the first polishing device 11 are configured. A plating thickness measuring machine 12 for measuring the film thickness before and after the electric clock is disposed near the _robot ^, and a dry state film thickness measuring machine 13 for measuring the semiconductor substrate V / film thickness in a dry state after polishing. '' This paper size applies Chinese National Standard (CNS) A! Regulations (210 X 297 mm) n · i In m ϋ— nnm til II · n ieMt I n «i 1 iam port, I n Ha · ϋ n I— flu m I (Please read the notes on the back before filling out this page) 30 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-♦-31 312143 480580 V. Description of the invention (M) And the film thickness before and after the plating The measuring machine 12 and the dry-state film thickness measuring machine 13, especially the dry-state film thickness measuring machine 13, can also be used on the arm of the robot 3 as described in detail below. Although the illustration of the film thickness measuring machine 12 before and after the electricity is omitted, # can be set at the entrance of the semiconductor substrate for the Cu key film filming unit 2 to measure the film thickness of the film and the semiconductor substrate The first polishing device (grinding unit) 1 () of the film p body soil plate, equipped with a polishing table 10 ″, a top ring 10-2, a top ring head 10_3, a film thickness measuring machine 10_4, and a propeller 1 〇_5. = Two polishing devices (grinding unit) u, equipped with, polishing platform, top morning 11 2 top ring head 11_3 'film thickness measuring machine, thruster. As shown in Figure 1A, the contact hole is formed. 1 03 and the wiring groove 104 ′ on which the semiconductor substrate w of the semiconductor substrate w on which the seed layer m is formed 1 are mounted on the loading port of the loading and unloading section. The third person 3 removes the semiconductor substrate W from the crystal. The circular box i_i is taken out, and the Cu film is formed into a single film 2% to form a plating layer 106. At this time, the film thickness of the seed layer 1G7 is measured by a film thickness measuring machine 12 before and after the electron microscope. Film formation is performed by first forming a hydrophilic portion on the surface of the semiconductor substrate, and then performing Cxi plating. After forming a Cu plating film 106,

Cu hairs are plated into rhenium. Unit 2 performs rinsing or washing. If time is sufficient, it can also be dried. A structure example of the CU plated film formation unit 2 and its operation are described in detail below. When the semiconductor substrate W is taken out from the Cu plated film forming unit 2 by the first robot 3, the film thickness of the Cu plated film 106 is measured by a front and rear thickness measuring machine 12. The method of Pan | Wugu and l_ ^ li is the same as the thickness of the seed layer 107 above, and its measurement T degree is applicable I --------- Order --------- (Please read first Note on the back, please fill in this page again) 480580 Member of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7 printed by industrial and consumer cooperation V. Invention description (32 The results are recorded in the recording device (not shown) as the recording data of the semiconductor substrate, and can be used The abnormality is judged on the Cu plating film forming unit 2. After the film thickness is measured, the first robot 3 transfers the semiconductor substrate w to the inverting machine 5 and inverts with the inverting machine 5 (so that the surface on which the Cu electroplating is formed) is oriented Below). The first polishing device 10 and the second polishing device u are used for grinding in series and parallel. The series and parallel grinding are described below. [Serial grinding] Tandem grinding is based on the first The polishing device 10 performs primary polishing, and the second polishing device 11 performs secondary polishing. The second robot 8 turns the semiconductor substrate on the turning machine 5 and places the semiconductor substrate w on the propeller of the polishing device 10. 1〇 · 5. Top ring 1〇_2 suck the thruster The semiconductor substrate w on 10-5, as shown in FIG. 3, is pressed against the polishing surface HMa 'of the polishing table against the polishing surface HMa' of the polishing substrate. The secondary polishing is performed on the secondary polishing system. It is used for the basic grinding of Cu electric money film 106. The grinding surface 1 () of the grinding platform w is made of foamed polyurethane, or fixed or impregnated with abrasive particles. Because the grinding surface 107 and The relative movement of the semiconductor substrate W grinds the Cu electrode 106. The material ejected by the abrasive grain nozzle 10-6 for polishing the Cu electrode film 106 described above, the sun_gs Μ ## 制 ⑪, Rhenium oxide, thorium oxide, etc., are those that are mainly acidic materials such as hydrogen peroxide, which are used as fixed emulsification materials. In order to maintain the temperature at the selection platform within the grinding platform 1 (M) ^ There is a temperature-adjusting flow for circulating the temperature-adjusted liquid to maintain the slurry temperature at a selected value. The slurry nozzle " ((CDS) A4 secret X 297 mm) --------_ 312143 -----------, --- install -------- order -------- line (please read the precautions on the back before filling this page) 32

H-OUJOU B7 V. Description of the invention (33) | 10-6 is equipped with a thermostat 10-7. Bu ...— II :: zhi :: hour: It is adjusted The temperature of bu ... is maintained by Tao and other ceramics such as SlC. The measurement of the end point of oxidized oxide with good thermal conductivity or the secondary grinding is used to measure Cu electricity using the eddy current type film thickness measuring machine 10_8 or optical film thickness measuring machine 10_9 'set on the grinding platform. The film thickness of the plating film 106, or the surface inspection of the barrier 4 Π) 5 'If the film thickness of the Cu plating film 106 is 0 or the surface of the barrier layer 105 is detected, it will be the end point. After the polishing of the Cu plating film 1G6 is finished, the semiconductor substrate is pushed back on the 11 1G · 5 with a top ring. No .: The robot 8 lifts the semiconductor substrate W into the first washing machine. At this time, the surface of the semiconductor substrate W on the propeller 10-5 and the bottom surface are sprayed with a chemical solution to remove particles, and also make it Not easy to attach. Fig. 4 is a schematic diagram showing a first washing machine. The first washing machine 9 is wiped and washed with a PVA foam roller 9_2, 9_2 on the surface and bottom surface of the semiconductor substrate w. As the washing water sprayed from the nozzle 9-4, pure water is mainly used, but it is also possible to use a mixture of a surfactant and a chelating agent or both to adjust the pH so as to meet the zeta potential of copper oxide. Also, an ultrasonic vibration element 9-3 may be provided at the nozzle 9-4, and an ultrasonic vibration may be applied to the sprayed washing water. Reference numeral 9-1 denotes a rotation collar for rotating the semiconductor substrate w in a horizontal plane. After the first washing machine 9 finishes washing, the second robot 8

ΐThe paper size is applicable to China National Standards (CNS) / V1 specifications (!? 10 X 312143 order line 480580 A7 I " ~ ----—- B7_____ V. Description of the invention) Half-body substrate W is lifted and placed On the propeller of the second polishing device 11. The semiconductor substrate w on the propeller n_5 is sucked by the top ring 11_2, and the semiconductor substrate W is pressed against the polishing surface of the polishing table 11β1 with the surface on which the barrier layer 105 is formed, and then polished twice. The structures of the polishing table 11-1 and the top ring 11-2 are the same as those shown in FIG. 3. This secondary polishing is performed on the polishing barrier layer 105. However, there are cases where the CU film or the oxide film left by the above-mentioned one polishing is polished. The lapping surface u_la of the lapping platform 11-1 is made of foamed polyurethane such as IC1000 or a fixed or impregnated abrasive grain. The relative movement between the polishing surface u_la and the semiconductor substrate W is used for polishing. In this case, the abrasive grain or slurry is made of oxidized stone, oxidized oxide, hafnium oxide, or the like. The chemical solution is adjusted according to the type of film to be ground. The detection of the end point of the secondary grinding is mainly used to measure the film thickness of the barrier layer 105 using an optical film thickness measuring machine 10-9 as shown in FIG. The detection of the surface of the completed insulating film 102 is performed. In addition, a film thickness measuring machine with an image processing function was used to measure the oxide film on a film thickness measuring machine 11-4 located beside the polishing platform 11, and a processing record of the semi-conductor substrate W was left to perform Whether the semiconductor substrate trade can be transferred to the next step after the secondary grinding | grinding is finished. In addition, when the secondary grinding does not reach the end point, re-grinding is performed, and if there is any abnormality beyond the specified value, the semiconductor substrate processing device is stopped to prevent the second grinding from increasing and the defect is not achieved. The top ring 2 moves the semiconductor substrate W to the thruster U_5. The semiconductor substrate on the thruster 丨 1-5 ... With the second machine This paper size is applicable to the Chinese National Standard (CNS) A4 specification X 297λΓ ^ Τ ------ 嗖) 34 涵 43— ~~

I install -------- order -------- ^ line * ------- (Please read the precautions on the back before filling this page) 480580

The Ministry of Economic Affairs' new production and consumption of consumer goods, and the producer cooperatives of Fei Cooperative 8 raised. At this time, the medicine liquid on the thruster 丨 丨 is sprayed on the surface and bottom surface of the semiconductor substrate W to remove particles, making it difficult to adhere. The second robot 8 carries the semiconductor substrate W into a second washing machine 7 to perform knee washing. The structure of the second washing machine 7 is the same as that of the first washing machine 9 shown in FIG. The surface of the semiconductor substrate w is mainly for removing fine particles, washing with pure water added with a surfactant, a chelating agent, or a pH adjuster, and wiping it with PVA foam 9-2. On the bottom surface of the semiconductor substrate ^, a strong chemical solution such as DHF is sprayed from the nozzle 9-5, and the diffusion cu is etched, or when there is no diffusion problem, the same chemical solution as the surface is used to wipe and wash with the PVA foam roller 9_2. After the above-mentioned washing is completed ', the semiconductor substrate is lifted by the second robot 8 and moved by the turning machine 6 to turn it over. The inverted semiconductor substrate W is lifted by the first robot 3 and sent to the third washing machine 4. The third washing machine 4 sprays the sonic water excited by the ultrasonic vibration on the surface of the semiconductor substrate w to perform washing. At this time, it is also possible to use a washing liquid in which a surfactant, a chelating agent, and a pH adjuster are added to pure water, and the surface of the semiconductor substrate w is washed with a known pencil foam. Then, the semiconductor substrate w is dried by spin drying. When the film thickness is measured by the film thickness measuring machine u_4 located beside the polishing table 114 as described above, it is directly taken into the wafer cassette placed in the unloading port of the loading and unloading section 1. When measuring a multilayer film, since it is necessary to perform the measurement in a dry state, it is moved into the film thickness measuring machine 13 again to measure each film thickness. Leave here as the processing record of the semiconductor substrate W in order to proceed to the next step_ ^ -------- ^ --------- (Please read the precautions on the back before filling in this Page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) 35 312143

V. Description of the invention (36) Printed by the Consumer Cooperative of the Intellectual Property Agency of the Ministry of Economic Affairs = Judgment. When the polishing end point is not reached, the semiconductor substrate W 'reflected in the subsequent processing or any abnormality during polishing to a value exceeding the specified value is stopped, so that the semiconductor substrate processing apparatus is stopped so as to prevent the next polishing from increasing defective products. [Parallel grinding] Parallel grinding is a method in which the Cu electric film forming unit 2 is used to form a semiconductor substrate w of a Cu electron mirror film 106, and If Λ 卩, the first robot 8 will be individually polished by a polishing device 10 and n. The half-V body substrate W turned upside down by the turning machine 5 is lifted up, and the semiconductor substrate w is placed on the pusher 10-5 or U-5. The top ring 10_2 or u_2 sucks the semiconductor substrate w, presses the Cu plating film 10 of the semi-body substrate W against the polishing surface of the polishing table 10-1 or 11-1, and performs a single polishing. Grinding platform ΐ (Μσ, 11-1, the grinding surface UMa, u_la is the same as above, as is the foamed polyurethane of IC1_, or the abrasive particles are fixed or impregnated. The grinding surface and the semiconductor substrate W The relative motion is used for grinding. The abrasive grains, or materials, use oxidizing materials such as oxidized dream, oxidized 48, osmium oxide, etc., and oxidizing materials with acidic materials such as hydrogen peroxide as the oxidant. Grinding platform HM and materials or The trimming water, etc., are the same as above, and are adjusted to maintain a constant chemical reaction rate. Specially for the grinding tables 10-1 and 11-bu, they use ceramics with good thermal conductivity such as oxidized metal or w. Grinding platform 10- The polishing of 1 or 11-1 is performed through most steps. The first step is to polish the Cu plating film 106. The purpose at this time is to remove the level difference of the surface of the Cu plating film 106, and use the excellent level difference characteristic. Many materials. For example, 'can make 100 micron line height difference from the original ^} Zhang Zhang scale Chinese National Standard (CNS) A4 specification (21〇36 312143 M .-------- ^- -------- ^ (Please read the notes on the back before filling this page) 480580 V. Description of the invention (37) Those who are not 700 meters down to 20 nanometers. At this time, the main step of the first step is to press the semiconductor substrate w with the pressing load equal to the following step / step, and the polishing conditions are uniform. The detection of the end point in the first step to the low-difference special dry step, when the Cu mine furnace U6 residue is set to 500 nanometers, the plating film can not be used as shown in Figure 3 Vortex thickness measuring machine 10-8, 禆 m ^ lack of motor-type film • field system below or ground to the barrier layer 105, use optical thickness measuring machine 10-9. Cu plating film After the grinding of 10 and the seed layer 107, and the layer 1 to 7 is finished, the barrier layer 105 is ground, and Tian Tongwei takes the slurry used for the first time. It is necessary to change the composition. Therefore, at the end of the second step, the residue remaining on the polishing surface of the grinding table 1 (M gu) is used in the first and second steps. Water and gas mixed micronizer and trimmer are removed and moved to the next step Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs It is a diagram showing the structure of a washing mechanism for washing the grinding surface ι〇 · la of the above grinding platform ι〇_ι. As shown above, there are a plurality of (four shown) Mixing spray nozzles la to 10-1 Id sprayed with pure water mixed with nitrogen. At each of the mixing spray nozzles 10-lla to 10-lld, nitrogen is supplied from the nitrogen supply source 14 through the regulator 16 for pressure adjustment by air. Valve 18 is supplied, and at the same time, pure water from pure water supply source 15 and pressure adjusted by regulator 17 is supplied through air-operated valve 19. The mixed gas and liquid are individually changed in liquid and / or gas using spray nozzles. Parameters such as pressure, temperature, nozzle shape, etc., each of the supplied liquid is sprayed through the nozzle to make < 1 > the liquid micronized, < 2 > the liquid solidified particle solid paper national standard (CNS) A4 specification (210 X 297 mm) '' 37 '312143 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 480580 A7 I --------______ V. Description of the invention (μ)' < 3 > Liquid evaporation and vaporization (these < 1: >, < 2 >, < 3 > Or micronization), the mixture of the liquid component and the gas component is sprayed toward the grinding surface of the grinding table 10-1 in a selected direction. With the relative motion of the polishing surface 10-la and the dresser 1 (MO), when the polishing surface 10-13 is regenerated (trimmed), from the spray nozzle] [〇_11 & to 1〇_1] ^ Pure water The mixed fluid with nitrogen is sprayed on the grinding surface 10-la for washing. Nitrogen: pressure and pure water pressure can be set independently. In this embodiment, the pure water pipeline and nitrogen pipeline are both manually driven regulators, which can also be used. A regulator that can change the set pressure based on an external signal. Using the above-mentioned washing mechanism to wash the polishing surface 10-la, the washing process can be performed in 5 to 20 seconds, and the above-mentioned first grinding step and second grinding step can be performed. The material left on the grinding surface is removed. Also, although the illustration is omitted, a washing mechanism having the same structure as that shown in FIG. 5 is provided for the washing and polishing platform 1 (the grinding surface 10-la 'of the μm). The abrasive grains of the polishing slurry of the barrier layer 105 in the step are preferably the same as those of the abrasive grains of the above-mentioned Cu electroplated film 106, and the pH value of the chemical solution depends on whether it is acidic or inexperienced. The condition is that the mixture does not become a mixture on the polishing surface. Silicon oxide particles, the pH of the drug solution can be either alkaline or acidic. The end point detection in the third step is performed using an optical film thickness measuring machine as shown in Figure 3. -9. Send out the detection signal that is mainly the film thickness of the SiO2 film or the residue of the barrier layer 105. In addition, use a film thickness measuring machine or u_4 with an image processing function installed near the polishing platform and 11-1. For the measurement of oxide film 'Leave the processing record of the semiconductor substrate W, and apply the Chinese national standard (cns) a4 specification TiT ^ l_9_7 to this paper standard

丨 Equipment -------- Order: Line · (Please read the precautions on the back before filling in this page) 58 Ή2Ι43 A7 V. Description of the invention (39 Whether the progress can be made. If there is any abnormality in the grinding in the third step, stop the re-grinding, or if there are any defective products that have been ground beyond the specified value, the body substrate processing device can avoid the second grinding. ^ The plate w moves to the push ^ The semiconductor Kiele main advancement state 10_5 through the top ring 10-2 or u_2. Thruster ... 115 advancer 10 · 5 or u_5 〇 ^. 11 times the semiconductor The substrate W is lifted by the second robot 8. At this time, the surface of the chemical liquid spraying substrate W and the semiconductors and the bottom surface on the 10-5 or U_5 are removed from the particles to make it difficult to attach. Move into the second washing machine 7 or the second washing machine 9 for washing. The surface of the semiconductor substrate w is mainly used to remove "particles," and a surfactant solution, a chelating agent, or a pH adjuster is added to the -washing solution. VA foam roller wipes and cleans. DHF is sprayed from nozzle 3_5 on the bottom surface of semiconductor substrate W For the strong chemical solution, when the diffused Cu is left undisturbed or there is no diffusion problem, use the same chemical solution as the surface to wipe and wash with a P VA foam roller. After the washing is finished, the semiconductor substrate w is lifted by the second robot 8 and moved to the turning machine 6 to turn it over. The flipped semiconductor substrate W is lifted by the first robot 3 and sent to the third washing machine 4. Third The washing machine 4 sprays high-frequency water excited by ultra-blue wave vibration on the surface of the semiconductor substrate W for it washing. At this time, it can also be used in pure water to add a surfactant, a chelating agent, and a pH adjusting agent. Surface washing with a known pencil foam. After washing, spin-dry, then lift the semiconductor substrate W with the first robot 3. This paper size applies to Chinese National Standard (CNS) / U specifications (210 X 297 mm) 312143 A7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ V. Description of the Invention u) A &quot; '~~ ^ Set up on the grinding platform 10-1 as above or Film thickness measuring machine beside 11-1 When measuring film thickness with 10-4 or 1U4, directly The wafer cassette loaded in the unloading port of the loading / unloading section 1 is received. For multi-layer film measurement, since the measurement must be performed in a dry state, the film thickness measuring machine i 3 is moved into the film thickness measurement device 3 again to measure each film thickness. A processing record of the half-V substrate W is left here to determine whether it is possible to enter the subsequent steps. When the polishing end point is not reached, the semiconductor substrate W reflected in subsequent processing, or if there is any abnormality in polishing beyond a predetermined value, the semiconductor substrate processing apparatus is stopped so as not to perform subsequent polishing to increase defective products. Figures 6A to 6C are diagrams showing an example of the structure of the dry-thickness film thickness measuring machine 13 provided on the first robot 3 and the robot arm of the robot. FIG. 6A is a diagram showing the appearance of the first robot, and FIG. 6β and FIG. 6C are top views and cross-sectional views of the respective robot arms. As shown in the figure, the first robot 3 has two upper and lower robot hands 3-1 and 3-1. The robot hands 3-1 are individually installed at the ends of the robot arms 3-2 and 3-2, and can be rotated and moved. Then, the semiconductor substrate w is picked up by the robot hands 3-1, 3-1 (the semiconductor substrate W is dropped into the recess), and can be transferred to the selected place. On the side where the semiconductor substrate w of the robot hand 3-1 falls, there are a plurality of eddy current sensors 1 3 a (four shown in the figure) constituting the film thickness measuring machine 13 in a dry state. The thickness of the semiconductor substrate W. 7 to 10 and 45 are diagrams showing a configuration example of the Cu plating film forming unit 2. As shown in FIG. Fig. 7 is a plan view showing a Cu plating film forming unit, Fig. 8 is a sectional view of Fig. 7, Fig. 9 is an enlarged sectional view of a substrate holding portion and a cathode portion, and Fig. 10 is an electrode arm portion For this paper ruler Long Caiguan Jiaxian (CNS) A4 size ⑵〇x 297 public housing) ^ ^ --------------------------- -------- Line (Please read the notes on the back before filling in this page) 480580 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (〇) The top view, Figure 45 is the 10th The top view of the electrode arm shown in the figure with the cover removed. The Cu plating film forming unit 2 is provided with a substrate processing section 2_ 丨 which performs plating processing and incidental processing, as shown in the figure. A plating solution tray 2_2 storing a plating solution is disposed without being connected to the substrate processing section 2-1 '. Furthermore, it is provided with an end fixed to an arm 2_4 swinging around a rotation axis 2-3, and has a substrate processing section 2 swinging thereon. 1 and the arm part 2-6 of the plating liquid tray 2_2. € The pole is further located on the side of the substrate processing part 2_〗, and is equipped with a pre-coating and recycling arm 2-7, and medicines such as pure water or ion water Liquid, even gas, etc. are fixed nozzles 2_8 which are sprayed onto the semiconductor substrate. Here, three fixed nozzles 2-8 are arranged, one of which is used for supplying pure water. The substrate processing section is as shown in FIG. 8 and the first As shown in FIG. 9, a substrate holding portion 2_9 holding a semiconductor substrate W with a key surface facing upward, and a cathode portion 2 · 10 arranged above the substrate holding portion so as to surround the outer periphery of the substrate holding portion 2_9. Further arrangement There is a bottomed, slightly cylindrical cup that surrounds the outer periphery of the substrate holding part 2_9 to prevent the scattering of various chemicals used in processing. It can move up and down freely through the air cylinder 2-12. "Here, the substrate holding part 2-9, using air_tube 2_ 丨 2, can be raised and lowered between the substrate receiving position A and the plating position B above, and the intermediate pre-processing and washing positions C. And the substrate holding part 2_9 It is composed of a rotating motor 2-14 and a belt 2-15, and can rotate at the same speed and speed with the above-mentioned cathode portion 2-10 at an arbitrary accelerated speed and speed. It is opposite to the substrate receiving position ^ A, and is a Cu plating film forming unit. The first machine on the side of the frame 2The side of the man 3 , There is a substrate carrying out entrance (not shown), when the substrate holding part of the paper size has passed the Chinese National Standard (CNS) A4 specification (21〇? 97 public love) ^ --------- -------- ^ (Please read the notes on the back before filling out this page) 480580 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (42) 2-9 When it reaches the plating position B The sealing member 2-16 and the cathode electrode 2-17 of the semiconductor substrate w held on the substrate holding portion are in contact with the cathode portion 2_110 described below. On the other hand, the upper end of the cup 2_u is located below the above-mentioned substrate carrying-out port, and as shown by the imaginary line in FIG. 9, it can reach above the cathode portion 2-10 when rising. When the substrate holding portion 2_9 is raised to the plating position B, the cathode electrode 2-17 is pressed to the outer periphery of the semiconductor substrate w held on the substrate holding portion 2_9, and the semiconductor substrate w is energized. At the same time, the inner peripheral end portion of the sealing member 2_16 is crimped onto the outer peripheral surface of the semiconductor substrate% and hermetically sealed to prevent the plating solution supplied on the semiconductor substrate w from oozing out from the end portion of the semiconductor substrate w, while preventing Contaminated cathode electrode 2_ 丨 7. The electrode part 2-5 of the electrode arm part 2-6, as shown in FIG. 10 and FIG. 45, has a cover 2_18 located at the free end of the swing arm 2-4, and a hollow surrounding the cover 2 · 18 The supporting frame 2-19, and the outer cover 2_18 and the supporting frame 2-19 hold and fix the anode 2-2 () on the outer periphery. The anode 20 ′ is covered with the opening of the cover 2-18, and a suction chamber 2-2 1 is formed inside the cover 2-18. The suction chamber 2-2 1 is then connected to the electroplating solution introduction pipe 2-28 and the electroplating solution discharge pipe (not shown). The pole 2-20 'is provided with a plurality of through-holes 2_2ob across the entire top and bottom. In this embodiment, a plating solution impregnating material 2-22 made of a water-retaining material covering the entire surface of the anode 2-20 is installed under the anode 2-20, and the plating solution impregnating material 2-22 contains a plating solution. Wet the surface of the anode 2_2 () to prevent the black film from falling off to the key surface of the substrate. At the same time, when the key liquid is injected between the plated surface of the substrate and the stomach 20 of the anode, it is easy to draw air out. The ill IIII 1 «I ---- ii. — I I--I-(Please read the notes on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210x 297 · mm) 42) 312143 Α7 Α7 Wisdom-Property • Bureau of the Ministry of Economic Affairs, Bureau, Employees, Industrial Consumption, printed by Feihesha 1 V. Invention Description Order 3 Impregnated material, 22 'is made of, for example,' polyethylene, polypropylene ', Lice vinyl, Teflon, polyvinyl alcohol, polyurethane 3 U to Φ i — made # &gt; k ^ ^ some of these derivatives made of woven, non-woven or foam-like structures Tao was made. The structure w, or the multi-forging fluid impregnating material 2 · 22 is installed on the anode 2_20 as follows. I :: 'The plurality of fixing pins 2_25 having a head at the lower end are impregnated with the liquid above the inside so as not to be detached, and the shaft portion is arranged inside the anode 2 · 20, and the fixing pins 2-25 The U-shaped cymbal spring 2.26 is pushed up to install the electric ore liquid containing the elasticity of the boring plate spring cyanine to fit tightly below the anode 2_2〇. With such a configuration, with the progress of electroplating, even if the thickness of the anode 2_2〇 gradually becomes thin, the plating solution impregnating material 2-22 can be reliably adhered to the lower surface of the anode 2_2〇. Therefore, it is possible to prevent air from being mixed between the lower surface of the anode 2_20 and the plating solution impregnating material 2_ | 22 to cause the plating failure. In addition, from the upper side of the anode, a pin made of a cylindrical PVC (polyvinyl chloride) or PET (polyethylene terephthalate) having a diameter of about 2 mm can be arranged to penetrate the anode and expose the bottom of the anode. An adhesive is applied to the end surface of the latch to fix and fix the plating solution impregnated material. The anode and the plating solution impregnating material may be used in contact, but a gap may be formed between the anode and the plating solution impregnating material, and electroplating is performed while the gap holds the plating solution. The gap is selected from a range of 20 mm or less, preferably from 0.01 to 10 mm, and more preferably from a range of 1 to 7 mm. In particular, when a soluble anode is used, since the anode is dissolved from below, the gap between the anode and the plating solution impregnating material becomes larger with time, and a gap of about 0 to 20 mm is sufficient. ^ -------- ^ --------- ^ (Please read the notes on the back before filling in this page) This paper is applicable to the national standard (CNS) A4i specification <210x297 ) 43 312143 480580 A7 __B7 V. Description of the Invention (44) Therefore, when the above-mentioned electrode portion 2-5, when the substrate holding portion 2_9 is located at the plating position B (see FIG. 9), it is lowered to the substrate held by the substrate holding portion 2_9. The gap between w and the plating solution impregnating material 2_22 is about 0 mm to about 0 mm, preferably 0.3 to 3 mm, and more preferably about 0.5 to i mm. In this state, from the electric bell liquid supply tube The electric money liquid is supplied, while the electric clock liquid is contained in the plating solution impregnating material 2_22, while the upper surface of the substrate w (the electric surface) and the anode 2-20 are filled with the electrolytic solution, thereby applying the electric money surface. Take a recording. The semiconductor substrate W before the plating processing of the substrate holding portion 2_9 at the substrate receiving position A is transferred to the robot hand 3_1 of the first robot 3 (see FIG. 6A) 'and placed on the substrate holding portion 2_9. Next, while raising the cup hi, the substrate holding portion 2-9 is raised to the pre-processing and washing position c. In this state, the pre-coating and recovery arm 2_7 in the retreated position is moved to a position facing the semiconductor substrate W, and the pre-coating liquid made of, for example, a surfactant is intermittently sprayed out of the semiconductor from the pre-coating nozzle provided at its end. The plated surface of the substrate w. At this time, due to the rotation of the substrate holding portion 2_9, the pre-coating liquid is dispersed throughout the semiconductor substrate w. Secondly, move the pre-coating and recovery arm 2_7 back to the life | avoiding position, increase the rotation speed of the substrate holding part 2-9,

I Threading part I, the pre-coating liquid is shaken off the electroplated surface of the semiconductor substrate w to dry it 1 5 I Then 'turn the electrode arm part 2-6 to the horizontal direction, so that the electrode part 2_ | 5 is located from the key liquid tray 2 Above -2, above the position where plating is applied, at this position, the electrode portion 2_5 is lowered toward the cathode portion 2_1. At the completion of the reduction of the electrode combination, the voltage is applied to the anode 2_2〇 and the cathode portion 2-10, and electricity is supplied inside the electrode portion 2_5, which is supplied through the electron microscope liquid passing through the anode 2_20. This paper is applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) 44 312143 480580 AI Industry Consumers of the Ministry of Economic Affairs_Feed Cooperatives Printed A7 V. Description of the Invention (45 ports supply electroplating solution to the plating solution impregnating material 2-22. At this time, the plating solution impregnating material 2-22 does not contact the surface to be plated of the semiconductor substrate w, and is about 0.1 to 10 mm, preferably 0.3 to 3 mm, and more preferably 0 to 5 mm When the plating solution is continuously supplied, the Cu-containing plating solution exuding from the plating solution impregnating material 2_22 fills the gap between the plating solution impregnating material 2_22 and the plating surface of the semiconductor substrate w, and is plated on the semiconductor substrate. Cu plating is applied on the surface. At this time, the substrate holding portion 2-9 can also be rotated at a low speed. When the electricity processing is completed, the t-pole arm portion 2-6 is raised and rotated to return the electrode portion 2-5 to the plating liquid tray 2_2. Up, down to the normal position. Next, pre-coat, back The arms 2-7 descend from the retreated position to the position opposite to the semiconductor substrate w, and recover the residual plating solution on the semiconductor substrate w from the plating solution recovery nozzle (not shown). After the recovery of the residual plating solution is completed, the The coating and recovery arm 2-7 moves back to the retreat position, and sprays pure water at the central portion of the semiconductor substrate w, and at the same time, accelerates the rotation speed of the substrate holding portion 2_9 to replace the plating solution on the surface of the semiconductor substrate W with pure water. The substrate holding portion 2_9 is lowered from the plating position 5 to the pre-treatment and washing position C. While supplying pure water from the fixed nozzle 2 8 for pure water, the substrate holding portion 2_9 and the cathode portion 2_rot are rotated for water washing. At this time, it is possible to wash the substrate. The pure water directly supplied to the cathode portion 2-10 or the pure water heard from the surface of the semiconducting plate W is used to wash the sealing member 2-16 and the cathode electrode 2-17 simultaneously with the semiconducting plate%. After the water washing, Stop the pure water supply from the fixed nozzles 2 · 8, accelerate the rotation of the substrate holding part 2-9 and the cathode part 2_10, and apply the CNS A4 size (210 X 297 cm) by centrifugation 312143 ϋ nnnnn ϋ nn .ϋ nn I · · ϋ nnn I— u nX—- ° JI nniiln In I (Please read the precautions on the back before filling out this page) 46 4 ^ 0580 B7 V. Description of the invention (may) | Force: Semiconductor substrate The pure water on the W surface is shaken away to dry it. At the same time, the dense parts 2 · 16 and the cathode electrode 2_17 are also dried. After the above drying is completed | 'the rotation of the substrate holding portion 2_9 and the cathode portion 2_10 is stopped to hold the substrate The sections 2-9 are lowered to the substrate receiving position A. Fig. 12 is a view showing the anode 2-2G and the money liquid impregnating material 2-22 in another embodiment of the present invention. The liquid contains a series of porous ceramics such as oxidized Ming, SlC, Fuming Andalusite, Oxidation: Bond, Emulsified Titanium, Shixigu Period Mine, etc., or polypropylene and polyethylene. It is composed of hard porous objects such as materials or composite materials of these. For example, when it is an oxide ceramic, a pore size of 30 to 200 microns and a porosity of 20 to 95% can be used. A thickness of 5 to 20 mm, preferably about 8 to 15 mm. Then, the plating solution impregnating material 2-22 is provided with a flange portion on the upper portion thereof. The flange 2-22a is a cover 2-18 and a support frame 2-19 (see FIG. 10). The impregnating material 2_22 has an anode 2-20 mounted thereon. In this embodiment, anodes of various shapes such as porous objects and meshes can be placed. In this way, the plating solution impregnating material 2_22 is composed of a porous object, and the resistance inside the plating solution impregnating material 2_22, which is interspersed with the inside of the plating solution, is increased, which can achieve a uniform plating film thickness and prevent the generation of particles . That is, since the plating solution impregnating material 2_22 is a kind of high-resistance body made of porous ceramics, it is advantageous to achieve uniform plating film thickness. In addition, the anode 2_2〇 is placed on the plating solution impregnating material 2-22. As the plating progresses, the anode 2-20 contacts the plating solution impregnating material 2_22 below: This paper size applies Chinese national standards (CNS ) A4 size (210 x 297 mm) 312143

-------------- Installed! (Please read the precautions on the back before filling this page) 丨 Line · V. Description of the invention and) ^ A gap can also be provided between the anode and the plating solution impregnating material, and the plating can be performed while the plating solution is maintained in the gap For processing, the gap is selected from the range of 20 mm, preferably 0.1 to 1 Θ mm, and more preferably 1 to 7 mm. Fancai 'when combined' does not require the use of fixtures for fixing the anode 2-20 The anode 20 keeps the distance between the lower surface of the anode 2-20 and the substrate W by its own weight, and can prevent the incorporation of air and accumulation therein. Fig. 51 is an electric equivalent circuit diagram of the devices shown in Figs. Π and 12; 'When the selected voltage is applied from the plating power source 2_37 between the anode 2-20 (anode electrode) submerged in the plating solution and the conductive layer (cathode electrode) of the substrate w, when a plating film is formed on the surface of the conductive layer la, the circuit The following electrical components exist. R !: Power line resistance between the power supply and the anode and various contact resistances R2: Polarization resistance at the anode R3: Plating solution resistance R4 · Polarization resistance at the cathode (surface of the money) Rp: Resistance value of the high resistance structure : Resistance of the conductive layer R6 'cathode potential introduction contact _ power line resistance between power sources and various contact resistances are resistance values Rp of high-resistance structures of plating solution impregnated materials 2-22, for example, for 200 mm wafers Above 0.01 ohms, preferably in the range of 0.001 to 2 ohms, and more preferably in the range of 0.05 to 0.05 ohms

47 Ή2143 ^ 0580 A7 V. Description of the Invention (Gu) = The resistance value of this high resistance structure is measured according to the following procedure. First, in the electroplating device, a direct current is flowed through the two electrodes formed by the anodes 2_center w at a selected distance to conduct electricity mining, and the voltage of beta and earth current power (V1) is measured. Secondly, the high-resistance structure with a selected thickness is configured in the same time in the same-plating device in summer time. The same: at the two poles: ^ Direct current (I) flows into the galvanic plating, and the DC power at this time is measured, ^ ^! ( V2). Thereby, the resistance value R (V2_V) of the resistive structure can be produced forever. At this time, the purity of the steel constituting the depolarization is preferably 99.99% or more. Moreover, the anode plate and the two electrode plates formed by the base T The distance between them is 5 to 25 ¾ meters when the substrate is ㈣ mm in diameter, and η to 75 耄 is more preferable when the substrate is 300 mm in diameter. The conductive layer on the substrate w The resistance can be obtained by measuring the resistance between the periphery and the center of the substrate with an electric meter, or by calculating the resistivity and thickness of the material of the conductive layer h. The examples shown in Figure 11 and Figure 12 are for the anode 2_2. On the top, there is a plating solution introduction pipe 2_28 having a plating solution introduction channel 2 inside and extending in the diameter direction. Yuyangji 2_20, plating solution introduction holes 2_28b provided with the plating solution introduction pipe 2-28 Opposite positions are provided with electric clock liquid injection holes 2-20a. And a large number of through holes 2-20b are provided on the anode 2_20. The plating solution injection holes 2-20a on the anode 2-20 are roughly corresponding Position, the plating solution reaches from the bottom of the plating solution impregnating material 2_22 to the top of the substrate w ) Thus, a key liquid column 2-3 0 that bridges the electroplating solution impregnating material 2_22 and the clock face of the substrate w is formed. Therefore, with the succession of the plating solution, the electroplating solution column 2-30 slowly grows, After mutual connection, such as the 46th chart, the paper size applies the Chinese National Standard (CNS) A4 ϋ_ΐ: 210 X 297 public love) ------- --------------- install ·-(Please read the precautions on the back before filling this page) Order.! Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Ί12141 B7 V. Description of the invention (49) The tube 2_28 runs in a vertical direction and spreads out! The flow of the entire plating solution Q on the surface to be plated. . Thereby, the bubbles B are squeezed out with the flow of the plating solution Q, and the line Qi is slightly straight before the flow of the plating solution Q, so that the money liquid Q is not mixed by air rolling. Therefore, it is possible to prevent bubbles from remaining in the plating solution filled between the plating solution impregnating material 2_22 and the plating surface of the base I plate w. Here, as shown in FIG. 47A, as the plating solution introduction tube 2-28, a wing portion extending in a cross shape in a direction perpendicular to each other may be used, and a plating solution introduction hole may be provided at a selected position along the direction of each wing long side. 2_28b, and as the anode (not shown), one having a plating solution injection hole 2_2〇a at a position corresponding to the plating solution introduction hole 2-23b can be used. At this time, as described above, a plating solution column formed to bridge the plating solution impregnating material and the plating surface of the substrate is formed at a position approximately corresponding to the plating solution injection hole 2-20a of the anode. As the plating solution continues to be supplied, plating After the liquid column slowly grows, a flow of the clock liquid Q that diffuses radially occurs in each of the quadrants divided by the electric mineral liquid introduction pipe 2-28, and the plating solution Q diffuses across the entire surface of the plated surface of the substrate W. Further, as shown in Fig. 47B, the plating solution introduction pipes 2-28 are arranged in a shape. When the plating solution introduction holes 2-28b are provided at selected positions, the same plating solution Q flows easily. The plating solution inlet holes 2-28b of the plating solution introduction tube 2-28 are mostly provided with holes of equal pitch and diameter, but the pitch and aperture can be adjusted to control the outflow of the plating solution. According to the embodiment shown in FIG. 11, FIG. 12 and FIG. 16, at a position substantially corresponding to the plating solution injection hole 2-2 Oa of the anode 2-20, the plating solution is from below the plating solution impregnating material 2-22 Reached on the substrate W (the size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love)

---- (Please read the precautions on the back before filling this page) Order *--丨 line. 312143 49 ^ 0580 ^ 0580 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, A7 ^ ----- ~ — ______ V. Description of the invention (50) — &quot; —— ~ Plating surface) is formed with a plating solution column 2_30 bridging the plating solution impregnating material 2-22 and the plating surface of the substrate \ ^. At this time, when the plating solution flows through the inside of the plating solution impregnating material 2_2, the brocade spreads in the direction of the flow, thereby reducing the damage to the seed layer 107 (see FIG. 1A) when the plating solution reaches the substrate w. Part of the P seed layer is subject to the phenomenon of jet flow, which helps the film thickness uniformity in the subsequent steps. , Ί Also, by making the inner surface of the through hole 2-20b distributed, the central dense outer periphery is sparse. ☆ Design ’has the effect of spreading the plating solution evenly. Furthermore, as shown by the imaginary line in FIG. 12, the plating solution reaches the upper surface of the substrate w (the surface to be plated) from the bottom of the plating solution impregnating material 2-22 (the surface to be plated) to form a plating solution column 2-3, for example, the substrate w is raised instantaneously It is also possible to make the plating solution impregnating material 2_22 and the substrate W instantaneously approach. In addition, under the condition that the edge of the substrate is pressed to make a concave bend, the plating solution column 2_30 is also formed, and the pressure is released to restore the shape of the substrate, and the plating solution impregnating material 2_22 and the substrate w can be approached instantly. For example, when the thickness of the plating solution impregnating material 2-22 is large or the density is high (porosity is low), the resistance of the plating solution when the plating solution impregnating material 2_22 flows inside is large. The combination of 2-30 is disrupted. At this time, even if air is involved, the plating solution impregnating material 2_22 and the substrate W are brought close to each other, causing the plating solution to flow to the outside, and the bubbles and the plating solution are expelled together. At the same time, the plating solution supply between the plating solution impregnating material 2-22 and the substrate w can be performed in a short time. In addition, the contact between the plating solution and the seed layer 107 (see Fig. 1A) under no-current state leads to the reduction of the seed layer 107. If the state of the paper is not short-term under the state of current application, the Chinese National Standard (CNS) A4 specification applies. (21〇x 297 mm) 312141.! --- I ---- ^ --------- (Please read the notes on the back before filling this page) Printed by the Bureau • Employees • Feihesha 312143 A7 V. Description of the Invention (51) If there is a diffusion of the plating solution on the surface of the substrate w, there will be variations in the initial film thickness of the plating, which will later damage the film thickness. Reasons for uniformity. However, in this way, these shortcomings can be prevented by supplying the electric money liquid between the plating solution impregnating material 2_22 and the substrate in a short time. As shown in FIG. 11, during the plating process, the plating solution is supplied to the plating solution impregnating material 2_22 through the plating solution injection hole 2-20a, and the plating is injected between the plating solution impregnating material 2-22 and the plated surface of the substrate W. At the same time, through the through-hole 2_20b, the same amount of plating solution as the injected plating solution can be sucked out from the plating solution discharge pipe (not shown) connected to the through-hole 2-20). In this way, by agitating the plating solution during the plating process, air bubbles that cannot be removed during the liquid injection, or air bubbles generated during the plating after the liquid injection can be removed. In this electroplating device, the distance between the plated surface of the substrate W and the anode 2_20 is small, and a small amount of plating solution can be used. On the other hand, because the amount of additives and ions in the plating solution is limited, it cannot be shortened. For efficient plating in time, it is necessary to evenly distribute these additives in the plating solution. In this regard, according to this embodiment, it is possible to perform electroplating in a state where the additives and ions are uniformly distributed because the plating solution is stirred during the plating process. This electroplating device uses a semiconductor substrate ... as a cathode, and an anode is connected to the anode to apply plating to the semiconductor substrate W. By applying a reverse voltage, the plating film provided on the semiconductor substrate can also be etched. In the state where the hole is filled with electroplating (40 to 400 seconds), after applying a reverse voltage for a short time (for example, 1 to 60 seconds), apply a forward voltage again (50 seconds, 0.05 microseconds). Applying the effect of reverse J pressure additive can prevent it from bulging only on the holes, so that the electroplating ^ paper size is applicable to the Zhongguanjia standard ¥ — (CNS) A4 specification (21G X 297 public love) ~ ---- ------ Order --------- Line (Please read the precautions on the back before filling this page) 480580 A7 ------ B7 V. Description of the invention (53) Material of shirt ring It is structured such that the end (lower end) thereof abuts on the plating solution impregnating material 2_22. This structure is the same as the embodiment shown in Fig. 42. The liquid electrolyte does not directly contact the anode 2-20. For example, even if the plating is repeated, the inner diameter of the end of Houguan 2-3 does not increase. Therefore, the collapse of the plating solution column 2-30 supplied from the plating solution impregnating material 孓 22 does not occur after the passage of time, and it is often maintained in an ideal state without air entrainment. Fig. 44 is a schematic configuration diagram of an electrolytic plating apparatus used in another embodiment of the present invention. This electrolytic plating device is different from the embodiment shown in FIG. 42 above in that it replaces the plating solution introduction tube and the tube 2-32 integrally formed thereon, and the anode 2_20 plating solution introduction hole 2-28b and A separately produced tube 2-33 is inserted into the electrolytic solution channel portion 2_34 of the plating solution impregnating material 2-22. At this time, the tube 2-33 is also made of a material that is not affected by the plating solution. For example, even if the plating is repeated, the inner diameter of the end of the tube 2-3 does not change after time passes. The collapse of the ideal plating liquid column 2-3 time does not occur. Therefore, because The disturbed air entrainment caused by the combination of the plating solution column 2-3 will not occur, and no bubbles will be accumulated between the plating solution impregnating material 2-22 and the substrate W without unevenness in film thickness. At the same time, since the pipe 2-33 is inserted into the plating solution impregnating material 2_22, the resistance of the plating solution when the plating solution passes the impregnating material 2-22 is reduced. For example, even when using a material with high thickness or density (low porosity) as the plating solution When the impregnating material 2_22, an appropriate amount of electroplating liquid can also be supplied from the selected position of the electroplating liquid impregnating material 2-22. The air entrainment caused by the disturbance of the combination of the electroplating liquid columns 2-30 will not occur, and there will be no --- ------------ Outfitting --- -N Qingyi wears ^^ Li to do anything else ¾ write this page} Order · 丨 line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 53 312143 A7 A7 Fifty-two V. Description of the invention (52 The film is homogenized.) Another embodiment is shown in the 42nd embodiment. In this embodiment, the plating solution V inlet tube 2-2 8 itself and the tube 2_32 communicating with it are provided. 2_ 2 Insert the electric money liquid introduction hole 2_2 in the anode 2-20 so that its end abuts the surface of the electric money liquid 3 π material 2_22. That is, in this embodiment In the state, the electric mineral liquid can be supplied to the surface of the electric mineral liquid impregnating material 2_22 without being in contact with the anode 2_20. The electroplating liquid introduction pipe 2_28 and the pipe m are made of materials that are not affected by any electroplating solution. The synthetic resin is integrally formed. In addition, the symbol 2_3 is a holding member that holds the substrate W. Yu Li directly supplies the electric mineral liquid on the surface of the plating solution impregnating material 2_22 from the plating solution introduction tube 2-28 through the tube 2_32, the surface is slightly A plurality of electroplating liquid columns 2_3 () are formed between the substrate w and the surface of the electroplating liquid impregnating material on the side of the expansion of the electric mineral liquid impregnating material 2 22, and a plurality of electroplating liquid columns 2_30 are bonded to the substrate. W is filled with electroplating solution and plating solution. Repeat this step of electricity. 'Due to the passage of time, the inner diameter of the end of tube 2_32 does not become larger.' The ideal plating solution column 2 · 30 will not collapse after the passage of time. The disturbed air entrainment caused by the combination of the electroplating liquid column 2_30 will not occur, and no milk foam will accumulate between the electroplating liquid impregnating material 2_22 and the substrate w, and there will be no uneven film thickness. Another aspect of the present invention_Electrolytic electricity used in embodiments A schematic diagram of the device. In this electrolytic plating device, the point of difference from the embodiment shown in Figure 42 above is to replace the plating solution introduction tube 2_28 and the tube 2 integrally formed thereon ^ 2 'Anode 2-20 In the plating solution introduction hole 2_28b, a separately produced tube 2-33 is inserted. At this time, the tube 2_33 is not subject to any plating solution 312143 imu In In 1--..... nnnm · ϋ I m I 1 1 II li 11 n If a σ1, I iu 111 n -1 fn 111! (Please read the precautions on the back before filling this page) A7 ———___ V. Description of the invention (54) The accumulation of air bubbles in the plating solution impregnated material There is no uneven thickness between 2.22 and the substrate w. (Please read the precautions on the back before filling out this page.) Figure 48 is a sectional view showing a modified example of the embodiment shown in Figure 42. In the case of the electroplating device shown in FIG. 42, the electric field on the surface of the substrate to be processed can also be controlled by adjusting at least one of the shape, internal structure, or components of different conductivity of the plating solution impregnating material 2-22. . Actively controlling the state of the electric field on the surface of the substrate to be processed in such an ideal manner can make the processing state of the target by the electrolytic processing of the substrate to be processed in-plane; When the electrolytic treatment is a money treatment, a uniform film thickness can be obtained on the substrate to be processed. Here, the shape adjustment can be adjusted by the thickness of the plating solution impregnating material 2-22, and the shape of the plane of the plating solution impregnating material 2-22 can be adjusted. The above-mentioned plating solution impregnating materials 2-22 are composed of porous materials. The internal structure of the porous materials can be adjusted by adjusting the pore size distribution of the porous material, adjusting the porosity, adjusting the tortuosity distribution, and the material combination. The adjustment is for it. ° Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and through the adjustment of the above-mentioned components with different conductivity, the shielding area of the plating solution impregnating material 2_22 can be adjusted by the components with different conductivity. Here, in the embodiment shown in Fig. 48, a band-shaped insulating member 2-35 is wound around the outer peripheral side surface of the porous ceramic plate (porous material) 2-22. As the material of the insulating member 2_35, a stretchable material such as fluorinated rubber can be used. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 54 312143 A7

V. Description of the invention (%) Yu Yu is introduced from the plating solution introduction tube 2_28 through the plating solution of the anode 2_2〇? ^ The plating solution supplied to the porous ceramic plate (porous substance) 2_22 under pressure is filled with the plating solution while the porous porous ceramic plate m is filled with the plating solution, and flows out from below to fill the substrate w and porosity. The introduction of the electroplating solution between the Taowan plates 2 and 22 can also be done from the gap between the edge seals 2-16 and the surface of the porous ceramic plate. At this time, it is not necessary to use the plating solution introduction tube 2-28 or the anode 2-20 plating solution introduction hole 2_2. Therefore, a selected voltage is applied between the anode 2-20 and the substrate W to allow a direct current to flow, and the entire surface of the conductive layer of the substrate W is electroplated (for example, copper plating). According to this embodiment, since porous ceramics are provided at the interval between the anode substrates w, the conductive layer of the substrate W is not easily affected by the above-mentioned reason / different distance from the contact 2_17 on the surface of the substrate W. The entire surface is plated with substantially uniform plating (for example, copper plating). However, the current density in the vicinity of the periphery of the contact 2-17 is also so high that the plating film thickness tends to be later than the other parts. In this embodiment, the insulating member 2_35 is wound around the outer peripheral surface of the porous ceramic plate 2_22. As shown by the dotted line in FIG. 48, the concentration of the current is prevented near the outer peripheral portion of the substrate W to reduce the current density. , Is to make the current density and other parts of the substrate slightly the same. Here, an electrolytic treatment device for performing an electrolytic treatment of a substrate to be processed with an electrolytic solution filled with an electrolyte between the substrate to be processed having a contact with an electrode of one of the anode and the cathode and the other electrode of the substrate to be processed Medium, at least a part of the electrolyte is set to have a conductivity lower than that of the electrolyte

55 312143 480580 A7 B7 V. Description of the invention (56) Resistance structure 'The above high-resistance structure has its outer periphery held by a holding member, and there is provided between the resistance structure and the holding member to prevent the electrolyte from leaking from this part. The sealing member for current flow can also be used. [Embodiment of using a sealing member] Fig. 49 shows the main part of the outer periphery of the porous ceramic panel 2-22 of the electrolytic plating device having the same structure as that shown in Fig. 48 A rough drawing. However, this electrolytic plating apparatus does not include the insulating member 2-35 shown in Fig. 48. In the electrolytic plating device, the gap between the holding member 2 and the porous ceramic plate 2-22 is not sealed. As shown by the arrow, there is a liquid flow from the anode through the gap portion to generate a current path. This current is non-perforated porous ceramics: the path resistance of the plate 2_22 is low, so the current == there is no control of the electric ore film near the outer periphery of the substrate W. In this embodiment, as shown in FIG. 50A There are two cymbals between Tao 1 and the holding member 2- to prevent the plating solution from leaking out of this part, and the electroplating cymbals near the base periphery can be controlled to a low thickness. The reason for the sealing member 2_36 in this embodiment is that it is composed of an insulator, and it also has the function of: And the sealing member 2-36, the cross-section is as follows; = for the sex of the component to hold the material 2.18 and more pure ceramics. The plate 2 can be separately sealed with a ring-shaped sealing member 2 and the connecting part of the lower part of the coffee Insulating member 2 3 s 4 /, as shown in Fig. 48, the insulating member part 2 having the same function as 5 is installed. b, -------------- Shang—— (Please read the notes on the back before filling in this page) -6. Line · 56 312143, drink 80 B7 V. Description of the invention (57) It is needless to say that the sealing portion is 9 κ ^ -36, which is also applicable to the actual forms other than the figure 48. It also holds only P to prevent the plating solution from leaking from the outer peripheral side of the high-resistance structure 4 and the g} holding σ | 5 pieces 2] 8. It is a sealing member] and it uses the electric field control mechanisms related to various other μ-shape m in combination. The electric field can be controlled more effectively. Fig. 13 is a diagram showing another planar structure of a semiconductor substrate processing apparatus according to the present invention. In Fig. 13, the ^ knife table with the same symbol as in Fig. 2 is attached. The same applies to FIGS. 14 and 15. This substrate polishing device is disposed close to the first polishing device 10 and the second light-removing device u. The substrate is placed on the substrate washing tables 21, 22 near the third washing machine 4 and the Cu plating film forming unit 2. A robot 23 (hereinafter referred to as "second robot 23") is arranged near the first washing machine 9 and the third washing machine 4, and a robot 2 is arranged near the second washing machine 7 and the Cu plating film forming unit 2. Sin is called "the third robot ...", and a dry film thickness measuring machine 13 is arranged near the loading and unloading department worker and the first machine Is 3. In the substrate processing apparatus having the above structure, the first robot 3 is installed from In the loaded wafer cassette of the loading and unloading section 1, “the semiconductor substrate w is taken out, and the film thicknesses of the barrier layer 105 and the seed layer 107 are measured by the film thickness measuring machine 13 in a dry state, and then the semiconductor substrate w is placed. When the substrate mounting table is in a dry state, the film thickness measuring machine 13 is shown in Figures 6B and 6c, and is set on the robot hand 3 of the-robot 3]. Then the thickness is measured here and placed on the substrate. Set table 21. The semiconductor substrate w on the substrate mounting table 21 is transferred to the Cu plating / film forming unit 2 by the second robot 23 to form a plating film 106. After the Cu plating film 100 is formed, the paper ruler / paper before and after plating shall be in accordance with Chinese National Standard (cns) a4 (21 × 297 mm) 57 Please read the precautions on the back before filling out this page 312143 V. Description of the invention (58) The thickness measuring machine 12 measures the film thickness of the Cu'Dreamer 23's semi-conducting red coating 106. Then, the second machine, the conductor substrate w is successively t [series mode], and is mounted on the propeller indicator 25. String type, top ring head 1 〇_3 body substrate W suck, Han # ^ will advance the semi-conductor on the indicator 25 1 Wang Yun in grinding I a,

The semiconductor substrate W is polished with a polishing surface of fish ± π by pressing on the mouth-of the polishing table 101. Detection of grinding end point, push the same method as above>

With the top ring head 10 1 仃, the semiconductor substrate W after the grinding is finished: The 3 is transferred to the pusher 23 and the semiconductor substrate W is taken out. Washing and receiving are loaded on the propeller indicator 25.莜 The top ring head 11-3 will advance the semiconductor substrate W sucked on the shovel, shovel, and substrate. The grinding platform u small will press the semiconductor substrate w into the grinding process. The detection of the end point of the grinding is performed in the same manner as described above. After the end of the grinding, Feng Feng Office 1 &gt; The second page of the ring head Η-3 transfers the load. The second robot 24 lifts up the semiconductor substrate ′ and measures it with a film thickness measuring machine 26. The inner film and later, it is moved into the second washing machine 7 for work. Then moved into the second method-0 first washing machine 4, after this washing, spin drying to dry without dry ', and then with a lot of jealousy, one brother and one machine 24, lifted the semiconductor substrate w, and placed it on the substrate.置 台 22。 22. [Parallel mode] In the sub mode, the top ring head 10_3 or 11-3 sucks the semiconductor substrate W on the pusher indicator 25 and transfers it to the polishing platform or presses the semiconductor substrate w on the polishing platform 10_ 丨Or do not polish the polished surface 2. After the film thickness measurement, the third robot 24 scales the semiconductor substrate—applicable to the Chinese National Standard (CNS) A4 specification⑵Q χNuo Gong Ai Qiao ------- 58 312143 (Please read the precautions on the back before filling (This page), ------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy--------- line 1 · ------------! -IT nn 480580 Economy The Ministry of Wisdom and Production 消 7 工 工 f printed by the cooperative A7 V. Description of the invention (59) W is raised and placed on the substrate mounting table 22. The decentralized robot 3 moves the semiconductor substrate% on the substrate mounting table 22 to a film thickness measuring machine 13 in a dry state. After the film thickness is measured, it is returned to the wafer cassette 1-1 loaded with 1. Π Another 14th figure is a diagram showing a planar structure of a semiconductor substrate processing apparatus according to the present invention. The substrate processing device is formed on a semiconductor substrate w without a seed layer 27, and a seed layer 1G7 and a Cu plating film 106 are formed, and the plate t is divided by the formation of circuit wiring. The different point of the substrate processing apparatus is that a seed layer film forming unit 27 is provided instead of the third knee washer 4 shown in FIG. 2. Place the crystals of the semiconductor substrate w before the Gurner seed layer 107 is placed in the load unloading section! Loading port. The first robot 3 takes out the semiconductor substrate SW before the seed I 107 is formed from the circle W, and performs seed layer (Cu seed layer) 107 formation with the seed / unit 27. The seed layer ι〇7 is electrolessly plated. After the film is formed, it is heated to increase the density of the seed layer 107, and the film thickness of the seed layer 107 is measured by a film thickness measuring machine 12 before and after plating. Press X Xidi 3 to take out the semiconductor substrate, and use Cii plating to form a film. Child 2 performs Cu plating to form a film 106. The Cu electroplating film 106 is formed by first performing a hydrophilic treatment on the surface of the semiconductor substrate w, and then performing Cu electroplating. Then rinse or wash. If you have plenty of time, you can also do it 2. When the semiconductor substrate is taken out by the first robot 3, the thickness of the Cu power ore film 1 () 6 is measured by a thickness measuring machine 12 before and after plating. The above measurement method is the same as the film thickness measurement of the seed layer 107, and the recorded measurement results are used as the recording data of the semiconductor substrate w, and can also be used for Cu plating film forming units]. ) A4 specification (210 X 297 mm) 312143 -------------- cracked -------- order --------- line f please read the back first Please note this page before filling in this page} 59 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ---__ B7 __— V. Description of Invention (61) ~ ^ — Washing. Then, the semiconductor substrate w is dried by spin drying. Then, the second robot 8 lifts the semiconductor substrate W directly, and then the distributor 6. The first robot 3 lifts up the semiconductor-based second-time second-timer on the turning machine 6 on the above-mentioned grinding platform ^, called the nearby film thickness measuring machine 1__, and H-4 directly measures the film thickness and puts it into the loading. At the loading and unloading section, Π = When measuring the film thickness of the multilayer film, 'Due to the dry state, the test is performed 1, and the thickness is measured by the film thickness measuring machine 13 in a dry state. As shown in Fig. 6B and Fig. 6C, the dry state 臈 thickness measuring machine υ can be sighed by the robot hand 3] 胄 of the third robot 3, and the film thickness can be measured on the machine hand. The measurement result of the film thickness is retained as a processing record of the semiconductor substrate to determine whether it is possible to enter the subsequent steps. Fig. 15 is a diagram showing another planar structure of a substrate processing apparatus according to the present invention. This substrate processing apparatus is the same as the substrate processing apparatus shown in FIG. 14, which is a substrate processing method in which a seed layer 107 and a Cu plating film 106 are formed on a semiconductor substrate w without a seed layer 107 and polished to form circuit wiring. Device. The substrate polishing device is provided with a pusher indicator 25 near the first polishing device 10 and the second polishing device 11, and a substrate carrier is arranged near each of the second washing machine 7 and the seed layer film forming unit 27. Set 2 and 22, a robot 23 (hereinafter referred to as "the second robot 23") is arranged near the seed layer film forming unit 27 and the Cu plating film forming unit 2, and is placed in the first washing machine 9 and the second washing machine 7 A robot 24 (hereinafter referred to as a “third robot 24”) is arranged in the vicinity, and a dry state film thickness measuring machine 13 is arranged in the vicinity of the loading / unloading section 1 and the first robot 3. ^ ----------------- line (please read the precautions on the back before filling this page) This paper size is applicable to China Standard (CNS) A4 (210 X 297) Love) 61 312143 480580 A7 —__ B7 V. Description of the invention (60) Often judged. After the film thickness is measured, the first person 3 who holds the first one 3 sends the semiconductor substrate W to the turning machine 5 and turns the semiconductor substrate w. Second, ‘take the second machine! §Person 8 lifts the semiconductor substrate from the flipper 5 and places it on the pusher If 1G-5 or u_5, and presses it on the polishing surface i (M or the polishing surface on which the polishing is performed. Here, the polishing system is shown in Figure 2 The steps in the parallel mode polishing of the substrate processing device! The processing to step 3 is the same, so the description is omitted. After the polishing is completed, the top ring 10_2 or 11-2 returns the semiconductor substrate w to the thruster 10-5 or U_5. Lift the semiconductor substrate with the second robot 8 and you carry it into the first washing machine 9. At this time, on the propeller 10-5 or n_5, spray the chemical solution on the surface and bottom surface of the semiconductor substrate W to remove particles and make it Difficult to adhere. The first washing machine 9 wipes and cleans the surface and bottom surface of the semiconductor substrate w. The surface of the semiconductor substrate W is mainly used to remove particulates and is washed with pure water added with a surfactant, a chelating agent, or a pH adjuster. Use a PVA foam roller to wipe and wash. The bottom surface of the semiconductor substrate w is sprayed with a strong chemical solution such as dhf to etch the diffused Cu, or when there is no diffusion problem, use the same solution on the surface as the PVA foam roller. Wipe and wash. After washing, use a second machine The person 8 lifts the semiconductor substrate% and sends it to the reversing machine 6, and the semiconductor substrate is reversed by the reversing machine 6. The semiconductor robot W is again lifted by the second robot 8 and carried into the second washing machine 7. The second washing machine 7 is used for semiconductors. The surface of the substrate W is cleaned by spraying with high-frequency water that is subjected to ultrasonic vibration. At this time, it is also possible to use a cleaning solution in which pure water is added with a surfactant, a sonicator, and a pH adjuster. 60-sided bound book. The paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 312143 480580 A7 V. Description of the invention (62) Round box machine ejector ::: placed in the loading and unloading section 1 The loading port substrate mounting table 21 / jh barrier layer / 〇5 of the semiconductor substrate W mounts the friend to the seed sound. A machine person 23 uses the semiconductor substrate W to carry the unit 27 'as the seed layer 107. The seed layer -糸 is electrolessly plated. The second machine 107 之 半 穆 县 # t The seed thickness of the ore-forming film thickness measuring machine 12 is measured before and after the seed is formed, and it is moved into the Cu plating film forming unit. 2, forming Cu electroplating 〇106. Dryer 2Γ top! ^ After the formation of 106, measure the film thickness, move it to the pusher indicator plate, and suck :: 0-2 or 11-2 to transfer the semiconductor substrate on the pusher indicator 25 to the grinding platform 1 (M or u 10-2 Or 11-2 Send this Haruka outfit to the top of the V-body substrate to the film thickness measuring machine 10-4 or 11-. After the film thickness is measured, transfer it to the thruster indicator 25. Second, the third The robot 24 lifts the semiconductor substrate w from the propeller indicator 25 and moves the first washing machine 9. The third robot 24 lifts the washed semiconductor substrate W from the first washing machine 9 and moves it into the second washing machine 7 The semiconductor substrate after the washing and drying is placed on the substrate mounting table 22. Next, the first robot 3 lifts up the semiconductor substrate W and measures the film thickness with a film thickness measuring machine 13 in a dry state. The film thickness is then incorporated into a wafer cassette loaded in the loading / unloading section j 1-1 ° k

(Please read the precautions on the back before filling in this page.) The above example shows an example of forming a seed layer 107 and a Cu plating film 106 using the substrate processing apparatus shown in FIG. 14. The structure shown in FIG. 14 is used. The substrate processing device can form a barrier layer 105 and a seed layer on a semiconductor substrate W having a contact hole I 1 03 or a groove 104 formed in a circuit pattern.

V. Description of the invention (63) 107 and Cu capacitors 1 (36, grinding to form circuit wiring. Capacitor: loading of semiconductor substrate before unloading part 1 with barrier layer formed) ... robot 3 from crystal line, resistance r The 105 substrate W is moved into the seed layer film forming unit 27, and is formed into 107: and: the sublayer 107 is formed into a film. The barrier layer 105 and the seed layer are formed by an electrolytic plating method, and the barrier layer 105 and The seed layer 1107 is poor ... 'Zoom resistance. The film cover is open? Mt. Yamaguchi 14. Then use Cl! Electroplating film forming machine VU electric_106. At this time, the thickness of the film before and after the electric ore is measured. The only thickness: the film thickness of the barrier layer M5 and the seed layer 107. The processing of the CU power money film 106 is completed. Due to the selection of the plate μ +, Zhe, search ... The substrate processing device shown in the figure has the same processing. The description is omitted. • In the substrate processing apparatus shown in FIG. 15, a barrier layer ⑻, a seed layer such as Cu can be formed on a semiconductor substrate having the above-mentioned contact holes 103 or grooves 104 as described above. The plating is performed by polishing, and wiring is formed by polishing. Each wafer W of the semiconductor substrate w before the barrier layer 105 is formed is placed on a load and unloaded. k loading port. The first robot 3 is used to remove the semiconductor substrate w from the wafer cassette 1-1 placed in the loading port of the loading and unloading unit 1 and place it on the substrate mounting table 21. Next, the second robot u loads the semiconductor The substrate W is transported to the seed layer film forming unit 27, and film formation of the barrier layer 层 and the seed layer 107 is performed. The film formation of the barrier layer 105 and the seed layer 107 is performed by electroless plating. The second robot 23 measures the thickness of the semiconductor substrate w formed with the barrier layer and the seed layer 107 with a film thickness measuring machine η before and after electroplating, and measures the film thickness of the early layer 105 and the seed layer 07. After the film thickness measurement, 、 This paper size applies to Chinese national standards (CNsiXTiF ^: 297 Gongai Factory 480580 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7___ V. Description of the invention (64)

The Cu electron microscope film forming unit 2 forms a Cu electric money film 106. The processing after the plating film 106 is formed is the same as that of the substrate processing apparatus shown in FIG. 15 above, and its description is omitted. In the above-mentioned embodiment, the Cu plating film 106 is formed to form a circuit wiring, but it is not limited to Cu plating, and may be a copper alloy or other metal. Fig. 16 is a diagram showing a planar arrangement structure of another example of a cancer in a semiconductor substrate processing apparatus according to the present invention. This substrate processing apparatus is provided with a barrier layer film formation unit 111, a seed layer film formation unit 112, a plating film film formation unit 113, a tempering unit 114, a first washing unit 115, a bevel, a bottom washing unit 116, and a cover Power mining unit 117, second washing unit 118, first aligner and film thickness measuring device 141, second aligner and film thickness measuring device 142, first substrate turning machine 143, second substrate turning machine 144, Substrate temporary table 145, third film thickness measuring device 146, loading / unloading section ι20, first polishing device 121, second polishing device 122 'first robot 131, second robot 132, third robot 133, fourth robot 134. In addition, the film thickness measuring devices 141, 142, and 146 are unit units, and can be replaced freely because they have the same surface width dimensions as other units (electric clock's washing, tempering, etc.). In this embodiment, the 'barrier layer film formation unit U1 can be used as an electroless Ru electroplating device' The seed layer film formation unit 112 can be used as an electroless Cu power mining device, and the electroplated film formation unit 113 can be used as an electrolytic power ore. Device. Number! 7 is a flowchart showing the flow of each step in the substrate processing apparatus. The steps in the device will be described according to the flowchart. First, the first robot 131 is used to take out the wafer cassette no.a I loaded in the loading / unloading section 120. The paper size is applicable to China (CNS) A4 specifications ⑵0 x 297 male E ^^--In [ϋ I HI I ninn I 1 · nnnnn fi n one bit V nnnnnnn 1 (please read the precautions on the back first and then fill in this page) 480580 A7 I. 5. Description of the invention (65) The semiconductor substrate is arranged with the electrical side facing up Within the first alignment sound detector 141. Here, in order to set the standard and exhaustion point, 隹-^ ", the reference for the position of the film thickness measurement" After the gap for the film thickness measurement is aligned, ^ / Bensenogans Cu film Film thickness data of the bull conductor substrate W before formation. &lt; Secondly, the semiconductor substrate is transferred to the barrier layer film-forming unit 111 by the first household robot α, ^^^ robot 131. The barrier # Α_ 1 1 and the early layer U1 is formed by the ray layer, which is achieved by the helmet

Ru electroplating on a semiconductor substrate '", Xie Dao Nuo-1 take the ugly slippery device, and perform the film formation on the semiconductor ... interlayer insulation film (for example, Cu diffusion prevention U thorium film). After the silk, drying step The taken-out semiconductor substrate is transferred to the first-aligner and film-thickness measuring device 141 by the robot 131, and the film thickness of the semiconductor substrate, that is, the thickness of the barrier layer is measured. 'The robot 132 is brought into the seed layer film forming unit 112, and the seed layer is formed by electroless Cu plating on the above barrier layer. The semiconductor substrate taken out after the washing and drying steps is transferred to the system by the first robot i 32. Before the plating of the electroplating unit of the impregnated plating unit, it was transported to the second aligner and film thickness measurement Lizhai 142 used to determine the position of the notch to perform the notch alignment for Cu electricity money. If necessary, the thickness of the semiconductor substrate before the Cu film formation can be measured again. The semiconductor substrate aligned with the notch is transported to the plating film forming unit 113 by the third robot 133 and subjected to Cu plating. After washing and drying steps, take The semiconductor substrate is carried by the third robot 133 to the oblique angle and bottom surface washing unit 116 for removing unnecessary Cu film (seed layer). The oblique angle and bottom surface washing unit 116 are etched at an oblique angle at a preset time. • At the same time, wash the Cll attached to the bottom surface of the semiconductor substrate with a chemical solution such as hydrofluoric acid. 65 312143 Threading The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) A7

V. Description of the invention (%) (Please read the precautions on the back before filling out this page} At this time, you can also use the second aligner and film thickness measuring device 142 for semiconductors before transporting to the bevel and bottom washing unit 116 For the measurement of the film thickness of the substrate, the value of the Cu film thickness formed by electroplating on the left is taken. Based on the results, the gate can be arbitrarily changed for # engraving. Also, the remaining areas are engraved with beveled corners. In the field of circuit formation, although the circuit is formed, it is not used as a wafer in the end. This field includes a beveled portion. The beveled, bottom-surface washing unit Η 6 semiconductor substrates taken out after the washing and drying steps use a third robot 13 3 Carry it to the substrate inverting machine 143, turn the substrate inverting machine 143 and turn the plated surface down, and then use the fourth robot 1 34 to put in the tempering unit 114 for destabilizing the wiring. Before tempering and / or After the processing, the second aligner and the film thickness were measured to measure the film thickness of the copper film formed on the semiconductor substrate. Then, the fourth robot 134 was carried into the first polishing device 121 to perform the semiconductor substrate. The Cu layer and the seed layer are polished. At this time, although the desired abrasive particles can be used, in order to prevent dents and bring out the flatness of the surface, fixed abrasive particles can also be used. After the first polishing is completed, the semiconductor substrate uses The four robots 134 are transferred to the first washing unit and printed by 115 in the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs for washing. The washing is performed by arranging rollers having a length approximately the same as the diameter of the semiconductor substrate on the surface and bottom of the semiconductor substrate. After the substrate and the roller are rotated, the substrate is washed with pure water or deionized water while being washed. The semiconductor substrate is moved into the second polishing device 122 by the fourth robot 134 after the first washing operation, and the semiconductor substrate is polished. Barrier layer. At this time, although the desired abrasive particles can be used, in order to prevent sag, the plain paper size of the surface is applied to the national standard (CNS) A4 specification (210 X 297 mm) 66 312143 Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau I ·· &gt; * · 480580 A7 ---- B7 V. Description of the invention (67), the surface can also use fixed abrasive grains. Second After the light is over, the semiconductor substrate is transferred to the first washing unit 115 again by the fourth robot i 34 for wiping and washing. After the washing is completed, the semiconductor substrate is transferred to the second substrate turning machine 144 by the fourth robot 134 to be turned over, so that the The plating surface is facing up, and then the third robot is placed on the substrate temporary table 145. The semiconductor substrate is transferred from the substrate temporary table 145 to the covering electroplating unit 117 by the second robot 132, in order to prevent Cu from being oxidized by the atmosphere.

Nickel and boron plating are performed on the Cu surface. The covered semiconductor substrate is moved into the third film thickness measuring device 146 from the covering plating unit 117 by the first robot 132 to measure the thickness of copper. Then, the semiconductor substrate is carried into the first washing unit by the first robot 3m and washed with pure water or deionized water. After the washing, the semiconductor substrate is returned to the wafer box 120a loaded in the loading / unloading section 120. The first aligner and film thickness measuring device 141 and the second aligner and film thickness measuring state 142 perform positioning of the notch portion and measurement of the film thickness. The schematic diagrams of the second aligner and film thickness measuring device 142 are shown in Figs. 18 and 19. A flowchart showing the operation of the semiconductor substrate in the aligner and film thickness measuring device 142 is shown in FIG. 20. Align the Zaijian film thickness measuring device 142, while rotating the semiconductor substrate, and use an optical micro-sensor to detect the gap Wa, and position the gap Wa at any position. For example, the position of the notch Wa can be used as a reference position for detecting and setting the film thickness measurement point, so that the measurement points before and after processing are not shifted. When the plating device is moved in, the semiconductor substrate placement direction is consistent. This paper is 1 degree applicable to China National Standard #CNS A4 (210 X 297 mm) ----- 67 312143 ------------- ^ -------- ^ --------- line (please read the precautions on the back before filling this page) 480580 A7 —--- ~ —BZ ____ 5. Description of the invention (68) Device constructor, with a rotatable vacuum chuck 142-4. Lifter 142_: and optical micro-sensor 142_ 丨 for gap detection, eddy current sensor M2-3 for film thickness measurement, etc. In FIGS. 18 to 20, the semiconductor substrate w is carried in by the robot hand 132-1 of the second robot 132 (step §ι). The aligner and film thickness detector 142 raises the lifter 142_2 and transfers the semiconductor beauty board to the lifter 142_2 (step S2). The robot hand 132-1 of the second robot 132 is retracted (step S3), and the elevator is lowered (step s4). Thereby, the semiconductor substrate w is mounted on the vacuum chuck 142_4 (step S5). Then, while the vacuum chuck 142-4 is rotating, the notch Wa is detected by the optical micro-sensor 142-1, and the notch is positioned at an arbitrary position according to subsequent processing (step S6). When necessary, the eddy current sensor 142_3 is used to measure the film thickness at any different point of the semiconductor substrate w (step S7). Then, when the plating processing apparatus is put into operation, the semiconductor substrate W is positioned in the plating film forming unit 113 so that the position of the notch Wa of the semiconductor substrate W can be positioned (step S8). Then, the vacuum chuck is set to OFF (step S9), the lifter 142-2 is raised to transfer the semiconductor substrate w (step sl10), and the robot hand 133-1 of the third robot 133 is inserted (step S11) The lifter 142_2 is lowered (step S12), the semiconductor substrate W is transferred to the robot hand 133_ 丨, and the semiconductor substrate W is taken out (step S13). In Figs. 18 and 19, reference numeral 142_6 is a vacuum pump, and vacuum pump 142-6 is connected to a suction hole of a vacuum chuck 142_4 through a swivel joint 142-5. The symbol 142-7 is a motor that rotates the vacuum chuck 142-4, the symbol 142-9 is a motor that rotates the arm 142_8 equipped with the eddy current sensor 142-3, and the symbol 142-10 is an elevator 142-2. Of the actuator. In addition, the size of this paper applies Chinese National Standard (CNS) A4 specifications <210 X 297 mm) (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau employee consumer cooperative 68 68 480 580 Ministry of Economic Affairs Intellectual Property • Bureau, employee-consumer cooperative printed A7 B7 V. Description of Invention (69) Symbol 142-11 is a temporary stand for semiconductor substrates. The structure and operation of the aligner and film thickness measuring device 141 are the same as those of the aligner and film thickness measuring device 142, and their description is omitted.

The semiconductor substrate W transferred to the barrier layer film forming unit η of the electroless Ru plating device is firstly given Pd as a catalyst. Pd is applied to the semiconductor substrate w at about 30 ml, and the processing time is about 1 minute. After the semiconductor substrate W is washed with water, the semiconductor substrate W is treated with hydrochloric acid for activation treatment. At this time, in the hydrochloric acid solution, a 36% solution is at a concentration of about 100 liters / liter, and the liquid volume is about 30 liters. The processing time is about 丨 minutes. After the semiconductor substrate W was washed again, electroless plating was performed. Ruthenium plating solution uses FUCI3 · xE ^ O. The temperature of the substrate surface is about 85. 〇, about 10 minutes for processing. The film formation rate at this time was about 2 nm / min. In this way, the formation of the barrier layer 'is completed after the steps of washing with water and spin-drying. In the above steps, about 20 nm of Ru electroless plating can be obtained. The barrier layer 105 can be formed not only by electroless plating, but also by CVD, sputtering, or electrolytic plating. The barrier layer is not limited to RU. Any material can be used as long as it can prevent the diffusion of Cu to the interlayer insulating film such as TiN. As the seed layer film forming unit Π2 for CU electroless plating, the same device as the electroless RU power ore unit described above can be used. Figure 27 shows no electrolysis. Diagram of a structural example of a power unit. The structure of the electroless mining device shown in Fig. 27 is detailed in the description of the second aspect of the present invention. In the seed layer film forming unit 112, Litian ☆ ^ uses the bottom surface heating 315 to directly heat the semiconductor substrate W itself to maintain it. | _______ For example, 7〇C 〇From the leaching head 34 1 1 This paper size applies the Chinese National Standard (CNS) A4 specification (2) 〇 ------------------ --- Order --------- (Please read the precautions on the back before filling out this page) 6〇W4? B7 V. Description of the invention (7〇 mouth is heated to, for example, 50%. The factory is fully jealous , 隹 — ,, ρ of the plating solution on the surface of the semiconductor substrate w. 7 ^ ^ eight, the amount of plating solution on the semiconductor substrate w

Deep degree. Then, the motor M causes the semiconductor substrate W and the plate w to diffuse at the static surface of the substrate. Then, the semiconductor substrate is caused to form a plated film on the surface to be plated. After the seed layer forming process is finished, the electric ore liquid recovery nozzle is lowered to the inner part of the weir member on the outer peripheral portion of the surface of the abundant conductor substrate w and the electric ore liquid is sucked in. At this time, the semiconductor substrate W is

The rotation at the following rotation speed can concentrate the liquid remaining on the semiconductor substrate W on the portion of the weir member 331 by centrifugal force, which has high efficiency and can recover the plating solution with a high recovery rate. The thread is then lowered by the holding mechanism 311 to cause the semiconductor substrate W to leave the weir member to start the rotation of the body substrate W. From the nozzle 3 of the washing liquid supply mechanism, a washing liquid (ultra-pure water) is sprayed onto the semiconductor substrate w. The f surface is electrically cooled, and the electroless plating is stopped by dilution and wire while cooling the surface to be plated. Next, the semiconductor substrate 1 is spin-dried at a high speed by the motor%, and then the semiconductor substrate w is taken out from the holding mechanism 311. As the electroless plating solution mentioned above, it is based on CuS4.5H2O containing mismatched T EDTA · 4Na, reducing agent HCH〇, pH adjustment test NaOH, which has a pH of 12.5, and α, _dipyridine. . The plating temperature is about 40 to 80 ° C. The seed layer is formed not only without electrolytic electricity, but also by CVD, sputtering, or electrolytic plating. The bevel and bottom washing unit 11 6 performs edge (bevel) cu coin engraving and bottom washing at the same time, and can suppress the copper of the circuit forming part of the surface of the substrate. The Chinese paper standard (CNS) A4 specification (21G) X 297 public love) '--- 70 312143 480580 A7 V. Description of the invention (71) Natural oxide film growth. In Fig. 21, a schematic view of the beveled, bottom-surface washing unit 116 is shown. As shown in Fig. 21, the bevel and bottom surface washing unit η. A substrate is provided which holds the semiconductor substrate w located inside the bottomed cylindrical waterproof cover 22 upward and rotates at a high speed in a plurality of places along the circumferential direction of the outer peripheral portion by a self-cooling head 221 and rotates it at high speed The holding portion includes, for example, a central nozzle 224 disposed above a substantially central portion of the semiconductor substrate to the surface side of the substrate holding portion 222 and an edge nozzle 226 disposed above the outer peripheral portion of the substrate w. The center nozzle 224 and the edge nozzle 226 are arranged individually downward. Further, a rear nozzle 228 facing upward is arranged substantially below the center of the bottom surface side of the substrate w. The edge nozzle 226 is configured to be movable in the diameter direction and the height direction of the substrate. The movement width l of the edge nozzle 226 can be positioned at any position from the outer peripheral end surface of the substrate to the center, and the set value is input according to the size of the substrate w and the purpose of use. Generally, when the edge cut width C is set in the range of 2 mm to 5 mm, the copper film within the set cut width C can be removed when the number of rotations from the bottom surface to the surface does not cause a problem. Next, a washing method using the washing device will be described. First, the substrate is held in a horizontal state by the substrate holding portion 222 via the spin chuck 221, so that the semiconductor substrate W and the substrate holding portion 222 are rotated horizontally. In this state, the acid is supplied from the center nozzle 224 to the center of the surface side of the substrate W. The acid solution need only be a non-oxidizing acid, and examples thereof include hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, and oxalic acid. On the other hand, the oxidant solution is continuously or intermittently supplied from the edge nozzle 226 to the outer periphery of the substrate W. As the oxidant solution, use ozone water, hydrogen peroxide, nitric acid, sodium hypochlorite, etc. The paper size is applicable to Chinese National Standard (CNS) A4 specification do X 297 mm 71 3 ^ 2143 (Please read the note on the back first Please fill in this page again)-丨 Binding- 丨 Line · A7 A7 72 B7 V. Description of the Invention (One or a combination of these. And the field outside the ㈣C is different from the one above and the other is oxidized, and is supplied from the nozzle ... Pre-mixed with water, you can get sharper :: 2: 7 At this time, the _ rate of copper is determined by its concentration. Also, :: = surface. A natural heart of steel is formed in the road forming part: 'The rotation of the substrate and A柘 "Into the natural emulsification, the acid on the surface of the substrate and the entire surface of the substrate is immediately removed without causing the acid supply from the central nozzle 224 to stop. Then, the supply of the oxidant solution of the nozzle 226 can be removed. The silicon on the exposed surface is oxidized to suppress the adhesion of copper. On the other hand, from the back nozzle 228, the oxidant and the silicon oxide film tincture are simultaneously or alternately supplied from the center of the substrate surface from the back nozzle 228. This can make the bottom surface of the semiconductor substrate W Metal side attached The copper, etc., together with the substrate stone is oxidized and removed with an oxidant solution and a silicon oxide film etchant. If the oxidant / valley solution is the same as the oxidant solution supplied on the surface, it is better to reduce the number of drugs As a silicon oxide film etchant, hydrofluoric acid can be used. If the hydrofluoric acid is also used as the acid solution on the substrate surface, the type of medicine can be reduced. By this, if the supply of oxidant is stopped first, a hydrophobic surface is obtained. The water retaining surface (hydrophilic surface) can be obtained by stopping the residual solution first, and then the bottom surface can be adjusted according to the requirements of the process. In this way, the substrate is supplied with an acid solution, ie, an etching solution, and the metal ions remaining on the surface of the substrate w are removed. And supply pure water instead of pure water to remove and remove the paper. The size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) 72 &gt; 12143

L ------------- installed! (Please read the precautions on the back before filling this page) · 丨 Line · 480580 Printed by the Ministry of Economic Affairs • Intellectual Property • Bureau • Consumer Cooperatives This paper is sized for the Chinese National Standard (CiNS) A4 (210 X 297 mm) A7 5. Description of the invention (73 etching solution, and then spin-drying. In this way, the removal of the copper film within the edge cut width C of the outer peripheral portion of the semiconductor substrate surface and the removal of steel contamination on the bottom surface are performed simultaneously. End within seconds. In addition, the width of the edge cut can be set arbitrarily (2 mm to 5 mm), and the time required for etching has nothing to do with the width of the cut. Before the CMP step after plating, the tempering process is performed, and the subsequent cMp treatment or The electrical characteristics of the wiring have a good effect. If there is no tempering, if you observe the surface of wide wiring (units of several micrometers), most micro-hole-like defects are visible when the surface is treated, and the resistance of the entire wiring is increased. It can be greatly improved. When there is no tempering, due to the observation of fine wiring without holes, silicon should be related to the degree of granular growth. That is, granular growth on fine wiring Easy, wide wiring is accompanied by granular growth. With the tempering process during the growth of grains, it can be speculated that there are ultra-fine holes in the plating film that can not be detected by SEM (scanning electron microscope). Micro-hole-like depressions are formed on the upper part of the wiring. For the tempering conditions of the tempering unit 114, the surrounding gas is added with hydrogen (less than 2%), and the above effect can be obtained at a temperature of about 300 to 400 ° C for 1 to 5 minutes. The features of the substrate processing device constituted are listed below. Pretreatment, washing, and drying in each film-forming unit are carried forward to the next step without pollution. Each unit loaded in the device uses various kinds of liquids. Within the same unit, there are different choices of chemical solutions due to different manufacturing processes. If different chemical solutions are mixed, the treatment effect of the chemical solution will change, and the precipitation of the compound will not only affect the substrate in processing, it can be expected to After moving in u n- n HI m Ira I He an mmn I * n I -inmmn —ϋ ^ α ,,. I mim I nii I (Please read the precautions on the back before filling this page) 7¾ 480580 A7 It is stated (74) that the processing of the semiconductor substrate is also affected. Also, when the silicon robot is transported, due to the contamination of the robot, there will be various kinds of music liquid adhesion during the transportation of the substrate. Therefore, in this device, It is moved to the next unit, that is, before the subsequent steps of the semiconductor manufacturing device, it is carried out in the unit after the treatment is performed so that the processing chemical liquid does not remain on the semiconductor substrate, and the chemical liquid is not brought into other units. For example, when an electroless plating unit is formed from a barrier film formation step, when the substrate is moved to the electrolytic plating unit that performs the plating step to fill the wiring, the electroless mining unit has been cleaned, During the drying process, the alkaline electroless plating solution will not be taken to the electrolytic plating unit using the acid plating solution. In addition, when moving from the electroplating step to the CMP step, the acidic plating solution is not taken into the electrolytic plating unit in the CMP, and in addition to the electricity treatment, a washing treatment and a drying treatment are performed. In addition, the plated film forming unit 113 that performs the plating step of filling the wiring with U is characterized by a process that can be used as a surface active agent or pre-coating. Thus, in the plating film forming unit 113 (in a single unit), since the pretreatment is performed immediately before the electrolytic plating, the liquid injection micropores can be improved. In addition, since the plating film forming unit 113 (in a single unit) has a washing mechanism and a spin drying mechanism ', the semiconductor substrate W moved between the cells can be desiccated or dried in a desired wet and dry state. In particular, the cleaning mechanism and spin-drying mechanism are not only used for semiconductor substrate cleaning and drying, but also the sealing agent and cathode contact liquid for the same cleaning and drying, which can significantly reduce the replacement frequency of this piece. When continuous operation of the entire device is increased ^ This paper size is applicable to the CIvJs A4 specification ⑵Q χ 297 Gongai / 4 312143 • ------------- Installation ----- --- Order --------- line (please read the notes on the back before filling out this page) Ministry of Economic Affairs' wisdom * property, bureau, 480580 A7 ____B7__ V. Description of Invention (75) Effect. The loading of flexible units can be completed in a short period of time. 22A to 22D, 23A and 23B, 24A and 24B are diagrams showing a configuration example in which the loading units in the substrate processing apparatus can be freely replaced with each other. Figures 22A and 22B are top views of a platform on which the units constituting the substrate processing apparatus are mounted, Figure 22c is a front view, and Figure 22D is a cross-sectional view taken along the line A-A of Figure 22B. Fig. 23A is a front view of each unit of the substrate processing apparatus, and Fig. 23B is a B-B sectional view of Fig. 23A. FIG. 24A is a front view showing a state where each unit of the substrate processing apparatus is mounted on a platen, and FIG. 24B is a cross-sectional view taken along the line C-C of FIG. 24A. As shown in the figure, the two guides (for example, made of SUS material) are spaced at an interval lower than each of the units 30] [on the platen 3 00 of each unit 301 on which the substrate processing apparatus is mounted. 302, 302 are embedded in parallel arrangement on the platen 3⑽ (so that the upper surface of the platen 300 is about the same height as the upper surface of the guide plate 3202 and 3002), and a guide bar is arranged in the middle (for example, made of nylon resin material) 303 so that it protrudes above the platen 300. In addition, the bottom of each unit 301 is formed as a double bottom. Four rollers 304 are mounted on the upper bottom 305 with screws 30. At the same time, a groove 3 that is fastened to the guide bar 3 is provided on the lower bottom 306. 〇7. Each roller 笱 3 04 can be adjusted by mounting screws 308. The adjusting screw 308 adjusts the bottom of each roller 304 so as to protrude slightly (for example, about 1 meter) from the lower bottom portion 306. In this state, the unit 301 is inserted so that the groove 307 at the bottom 306 below the unit 301 is fastened to the guide bar 303, and the unit 301 enters the selected position according to the guide of the guide bar. In this state, such as this paper size_Zhongguan Jiaxian (CNS) A4 order --------------------- Order ---------- (Please read the precautions on the back before filling in this page) 75 480580 A7 V. Description of the invention (76) Figure 24A is shown between the bottom of the bottom 306 and the top of the table 300 equivalent to the light tube 304. The gap d of the protruding portion. With each unit 301 placed in the selected position, loosen each screw 308, and by pulling in the rollers 304, the bottom 306 below the unit 301 and the bottom are connected to the top plate 300 (the illustration is omitted in this section) In the state, the fixing screws (not shown) are used to fix each unit 3Gi to the platen. Each unit is loaded in the direction of the transfer robots 131 to 134 (see the figure) and faces the individual loading and unloading ports. At this time The width of the side of the robot of the unit 301, that is, the face width dimension D is the same size. When loading, use the unit loading surface of the unit's platen 300 as described above to insert it along the guide and insert it 302 ' It can be easily loaded. It can also be pulled in the opposite direction when the loaded unit 30m is removed from the device body. In the semiconductor manufacturing paradigm, technological innovation can be improved at any time. The unit 301 can be easily replaced without replacing the whole device. It is easy to replace a part of the unit 30 with other units. This update of the overall function of the unit can be done in a short time and at low cost. And again, in the premise of the replacement of this unit 301 The design of the control system is also simplified. In this device, the unit training that has been loaded can be set freely; the implementation or non-implementation of the process processing (the skip function of the unit) and the processing path of the semiconductor substrate W (the unit of the unit) Order of use). Therefore, not only when the unit is replaced, but also the device function can be flexibly adapted when different processes are required. In particular, in recent years, it has become increasingly important to have a variety of small-scale production lines that can respond to a small number of samples. The above structure, which can be used as a simple and easy combination of necessary units, is particularly useful. Figure 25 shows another embodiment of the substrate processing apparatus related to the present invention, the Zhang scale standard suitable financial standards (CNS) A4 specification (χ Lo Gong loved j --- (Please read the notes on the back before filling in this page) Ίάι, · •• line- -II, -—J u, 76 312143 480580 A7 V. Description of the invention (77) The plane configuration structure. For example, the digital information motor motor substrate processing device is suitable for the small-scale, one-to-many production of a substrate processing device for the system LSI required by the machine. The processing device is configured around the first robot 406 and the first robot 407, and the first electroplating film forming unit, the younger-plating film forming unit 402, the bevel, and the bottom washing unit 03 tempering as early as 70 404, The aligner / film thickness measuring unit 405 and the loading / unloading P 408 are configured. Two loading devices fc-1, 409, and 409 are arranged in the loading / unloading section 408, and each wafer cassette can be set at 41 °. In Figure 25, = Sichuan-based medicinal solution supply unit, 412-series electronic writing unit, 413-series touchpad, and 42-series gas supply or exhaust pipe. The above indicator 409 is a wafer that can be loaded The box 41o rises and lowers, and the mechanism 'the first robot 406, which is positioned on the substrate taken out by the first robot 406 and positioned in the high and low directions, can also reach the same height position. In this substrate processing apparatus, the first robot 406 removes the substrate on which the barrier layer and the seed layer are formed by another device from the wafer box 4 ι on the indicator 409, and then directs it to the alignment and film thickness measurement unit. 405 handling. After the notch alignment and film thickness measurement are performed with the aligner and film thickness measurement unit 405, the second robot 407 removes the substrate from the aligner and film thickness measurement unit 405, and applies it to the first plating film. The film forming unit 401 or the second plated film forming unit is transported, and copper plating is applied here. The substrate after the copper plating is transported to the aligner and film thickness measuring unit 405 by the second robot 407, and at this aligner and film thickness measuring unit: "Measure the film thickness of the substrate after plating. First The robot 406 takes out the aligner and the substrate of the film thickness measurement unit 405, and goes to the oblique angle and the bottom. Washing sheet: The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) _________ 77 &quot; Π143 -------- ^ --------- (Please read the notes on the back before filling out this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size applies to Chinese national standards (Cns) a4I4 78 480580 A7 ------- B7_____ V. Description of the invention (78) 403 Transportation. After cleaning the substrate at this oblique angle and bottom surface washing unit 403, it is transferred to the tempering unit 404. After the substrate is tempered by the fire unit 400, the substrate is returned to the wafer box 41 on the indicator 409 by the first robot 406. The first plating film forming unit 401 and the second plating film forming unit 402 It is also possible to set the same process to 'platform the majority of substrates at the same time.' Also on the first plating film The film unit 401 and the second electroplating film forming unit 402 can be used in different processes, or only one party can be used during the process. Also, the tempering unit 404 can be used for different processes. The bottom surface washing unit 403 is replaced with a plating film forming unit. In this substrate processing apparatus, the side 4 of the first plating film forming unit 401 and the second plating film forming unit 402 facing the second robot 407. The width of la, 402 a, that is, the width D, is related to the tempering unit 4 and the bevel, the bottom washing unit 403, the aligner and film thickness measuring unit 405, the washing unit 115 in the figure, 118, seed layer film forming unit 112, barrier layer film forming unit m, cover plating unit 117, aligner and film thickness measuring device 141 142 臈 thickness measuring unit 146, substrate turning machine ⑷, 144, temporary table 145, etc. The size of the face width is the same as the _large J size (although the figure has a different size of the display face width size), it can be easily described by introducing a new aluminum plate. Scream + ”update the device at low cost in a short time. Also, due to the alignment The film thickness measurement unit as early as 70 405 is also made the same size as the surface width of other units, and can be easily replaced. With the above substrate processing device configuration ^ ^ Straightforwardly, most of the substrate processing devices are installed in the factory. The combination of each installed ― early war in clothing can be used for different matching restrictions. When there is a demand for production, —_ 一 __, you can also quickly change 312143: ----------- ---------- Order --------- (Please read the precautions on the back before filling out this page) 480580 A7 B7 V. Description of the invention (79) The substrate made of the same unit Processing device for correspondence. (Please read the precautions on the back before filling in this page.) In the description of the above embodiment, the example in which the Cu plating film 106 is formed by electrolytic plating is described, and the Cu plating film 106 can also be formed by electroless money. As described above, according to the first aspect of the present invention, the following advantageous effects can be obtained. (1) A trench and / or hole for a wiring pattern is formed on the surface, and a semiconductor substrate having a barrier layer and a power supply seed layer formed thereon is subjected to metal plating, and the σ barrier layer, the power supply seed layer, and the metal electrode are formed. The process of grinding and removing the mineral film, washing and drying to form circuit wiring can be performed continuously in a single device. Compared with the case where each step is performed on an individual device, the whole can be miniaturized without requiring a large installation space, which can reduce the device Original cost, operating cost 'and can form circuit wiring in short processing time.

Wisdom-Property • Bureau • Employees-Consumer Cooperatives of the Ministry of Economic Affairs fp: U (2) A trench and / or hole for wiring patterns is formed on the surface, and a semiconductor substrate with a barrier layer formed thereon is provided with a power seed layer And metal plating film, the power supply seed layer and metal plating film can be ground, removed, washed and dried to form circuit wiring. The process can be performed continuously in a single device, compared to the case where each step is performed in an individual device, the whole can be miniaturized. No large installation space is required, which can reduce the original cost and operating cost of the device, and can form circuit wiring in a short processing time. (3) Form grooves and / or holes for wiring patterns on the surface, and a semiconductor substrate with a barrier layer formed thereon, apply a barrier layer, a power supply seed layer, and a metal plating film, and place the barrier layer, 蔵 伢The electric seed layer and the metal plating film grinding knife can be used to remove m and dry circuit wiring. ^ In a single device 79 312 = 43 A7 V. Description of the invention (80) It is performed continuously, compared with I Niu Fun &amp; mm In the case where each step is carried out in an individual device, the whole can be miniaturized, and it needs to be equipped with a small amount of money. There are two additional rooms, which can reduce the original cost and cost of the device, and can be formed in a short processing time. Circuit wiring. () By recording the measurement results of the film thickness measured by the film thickness measurement section and the residual film measurement section, and the original thickness of the residual film and each layer, it can be used to determine the processing of subsequent steps. ^ ^ Time control The quality of the steps, and the quality of the circuit wiring formation and processing of the finished bull conductor substrate. (5) It is possible to provide a substrate processing device that can easily cope with changes in the substrate processing process and update the normal function of the substrate processing device in a short time at a low cost. $ (6) The semiconductor substrate is held upward by the substrate holding part, and is charged with electricity between the electric surface of the electrode and the anode of the electrode arm part for electric mining treatment. After the plating treatment, the plated surface is removed after removing Between the anodes of the electrode arm: While the plating solution is being raised, the electrode arm is lifted and released to the surface to be plated. The semi-sculpture clay plate mouth can be held on the substrate holding part, and the 蝻 treatment before and after the plating process, washing, and drying can be performed. Other processing such as processing. (7) Because it can be pre-coated, electroplated, and washed in the plating unit, the time efficiency is good. (8) Since each unit is structured to be freely replaceable, changes to the substrate processing process can be handled freely and easily, and the overall function of the substrate processing device can be updated in a short time at a low cost. (9) A trench and / or hole for a wiring pattern is formed on the surface, and a semiconductor substrate with a barrier layer and a power supply seed layer formed thereon is subjected to metal plating, and the resistance is increased by # + &amp; 千 a Grind and remove the seed layer and metal plating film, wash to use ^^ standard (CNS) A4 size (2) GX 297 mm) 312143 (Please read the precautions on the back before filling out this page)-Binding: Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 80 Printed by the Ministry of Economy ’s Intellectual Property Bureau ’s Consumer Cooperatives-Karma- · # 独 A7 __B7 V. Description of the invention (magic) and the processing of dry-shaped circuit wiring can be performed continuously in a single device In the case where each step is performed on an individual device, the entirety can be miniaturized without requiring a large installation space, which can reduce the original cost and operating cost of the device, and can form circuit wiring in a short processing time. (10) A trench and / or a hole for a wiring pattern is formed on the surface, and a semiconductor substrate on which a barrier layer is formed, a power supply seed layer and metal plating are applied to grind the power supply seed layer and the metal plating film. Because the process of washing and drying the circuit wiring can be performed continuously, the circuit wiring can be formed in a short processing time. (11) Form grooves and / or holes for wiring patterns on the surface, apply a barrier layer, a power supply seed layer, and a metal electron microscope film, grind and remove the power supply seed layer and the gold 2 electric money film, and dry the wires to form the transfer wiring. Because processing can be performed in succession, circuit wiring can be formed in a short processing time. Next, the second aspect of the present invention will be described in detail based on Figs. 26A, 26B, 26C and even Fig. 29. The electroless mining equipment related to the application form is used, for example, to apply electroless copper electricity to the surface of the semiconductor substrate w and to form a seed layer or wiring by forming a copper layer. An example of this electron microscope step is described with reference to Figs. 26A to 26C. As shown in FIG. 26A, the semiconductor substrate W is formed by depositing an insulating film 2 made of SiO2 on a conductive layer 1a of a substrate 1 on which a semiconductor element is formed, and forming contact holes 3 and The trench 4 for wiring is formed thereon with a barrier layer 5 made of TiN or the like, and a seed layer 7 is formed thereon by electroless copper plating. The seed layer 7 is formed by sputtering in advance. Sometimes, it is also formed on the seed layer 7 by electroless copper plating for its reinforcement. The Chinese national standard if ^ NS) A4 specification is used. 〇χ 297 公公Issue) ----------------- (Please read the notes on the back before filling out this page) 312143 81 B7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Μ) Then, as shown in the second print, apply 1 on the surface of the semiconductor substrate w = fill the contact holes 3 and grooves 4 of the semiconductor substrate w with copper to remove the insulation 2 and deposit a copper layer 6 on the film 2 . Then use chemical mechanical polishing (CMP) groove 4, copper sound 6 = copper layer ^ to make the surface of the steel layer 6 filled in the contact hole 3 and the wiring and the insulation film 2 into the same plane w mountain surface As shown in FIG. 26C, the large J f surface is exposed to make the above-mentioned reinforcing seed layer, and as described above, a wiring protection film 8 is formed. ^ ^ v, can be formed by electroless plating, ′, 1 is formed by electrolytic plating. When electrolytic plating is used to form a film, the metal plating film forming glands described in the invention can be formed as early as 70, or the plated surface of the substrate can be kept facing down for electrolytic plating. The cup-type electrolytic money unit is formed into a film. Fig. 27 is a schematic configuration diagram of an electroless plating apparatus according to the present invention. As shown in Figure 27, the electroless ^ ^ ^ ^ is prepared as a component to be electroplated: the conductor substrate is held on the holding mechanism 3m above, and abuts on the electric clock face held on the holding mechanism 311 ( Top) The outer peripheral portion is sealed with a weir member (plating solution maintenance mechanism) 331 that seals the outer peripheral portion, and the semiconductor substrate W whose electric peripheral liquid (better electrolytic plating treatment liquid) is supplied to the outer peripheral portion sealed by the weir member 331 is electrically charged. The leaching head of the mine surface (the electroless electricity treatment liquid (dispersion) supply mechanism) 34 Bu electroless plating device, and # set in __⑴ near the outer periphery of the supply of washing liquid on the semiconductor substrate ... Surface washing liquid supply mechanism 351, and the discharged washing liquid, etc. (recycling container 36 for electroplating waste recycling and plating solution recovery nozzle 365 that is sucked and maintained in the semiconductor substrate electroplating solution and recovered, and the above-mentioned holding mechanism Si! • Motor for driving rotation (rotational driving mechanism) M. The following parts will be explained. The paper size applies to the Chinese national standard (CNShVi specification (110 X 297 mm) N7 312143-«^ -------- ^- ------ (Please read first Please fill in this page again if necessary.) 83 480580 A7 ___B7 V. Description of the invention (83). The holding mechanism 3U is provided with a substrate mounting portion 313 that holds and holds the semiconductor substrate w. The substrate is placed The part 3! 3 is configured to hold and hold the semiconductor substrate W, and is specifically provided with a vacuum suction mechanism (not shown): The semiconductor substrate W is sucked on the bottom surface by a vacuum suction mechanism. On the other hand, the substrate mounting portion The bottom surface side of 313 is provided with a planar bottom surface heater which heats and heats the plated surface from the bottom surface side (heater 'system 1 5. The bottom surface amnester 3 1 5 Sun thinks that the gate of the door ... W 15 It is constituted by, for example, a rubber heater. The master mechanism 311 is constituted so as to rotate the rattan by a motor M, and: The lifting mechanism (not shown) can be moved up and down. There is a semiconductor substrate w == ㈣ 之 逸, the sealing portion 333 'is provided so that the liquid head 341 cannot be moved up and down from the position shown in the figure, and there are a large number of nozzles at the end, which can disperse the electric mineral liquid shower foot. Structure for supplying the semiconductor substrate W with a substantially uniform hook surface The structure of the washing liquid for A to spray the washing liquid. A mechanism 351 is a liquid recovery nozzle from the end of the nozzle 353. For example, the structure can be moved up and down and swirled, and the final liquid is lowered to the top of the semiconductor substrate W. Also, weird the electric chain fluid on the semiconductor substrate w inside the weir member 3 3 1 on the outer surface of the surface. The = indicates the operation of the electroless plating farm. First-lower the holding mechanism 311 to the gap with the weir member 3 The semiconductor substrate is mounted on a substrate, which is a semi-conductive engraving device, which removes the substrate from the substrate mounting portion 313. The wafer is 8 inches in diameter. 312143 Order

, A7 ^^ ---- B7_____ V. Description of the Invention (Μ) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives printed the eight-person retention mechanism 311 as shown in the figure so that its upper part abuts the weir part 3 3 1 At the same time, the outer periphery of the semiconductor substrate W is sealed by the sealing portion 333 of the weir member 331. At this time, the surface of the semiconductor substrate w is in an open state. Next, the semiconductor substrate W itself is directly heated by the bottom surface heater 315, for example, the temperature of the semiconductor substrate W becomes 70. (] (Maintained until the end of the plating), and then a heating path such as 50 t of plating liquid is sprayed from the shower head 341 / mainly on the entire surface of the semiconductor substrate. Since the surface of the semiconductor substrate w is surrounded by a weir member 331 The injected liquid can be held on the entire surface of the semiconductor substrate W. The amount of the plating solution supplied can be such that the surface of the semiconductor substrate w becomes a small amount of 1 m (about 30 ml). The plating solution held on the plating surface The depth is preferably 10 mm or less, as well as 1 mm in this embodiment. If a small amount of the plating solution provided in this embodiment is sufficient, the heating device for heating can be a small one. In the embodiment, 'the temperature of the semiconductor substrate w is heated to 70 ° C, and the / jhl degree of the plating solution is heated to 50C, and the surface to be plated of the semiconductor substrate W becomes, for example, 60 C.' It is possible to optimize the plating reaction in the embodiment. Temperature. When the semiconductor substrate W itself is heated in this way, it is not necessary to have a larger power consumption for heating to a higher temperature, so that it can reduce the power consumption and prevent the material of the plating solution. The change is even better. Also, the power consumption for heating the semiconductor substrate rose itself is small and better, and the amount of the plating solution stored on the semiconductor substrate w is small, so that the heat preservation of the semiconductor substrate w by the bottom surface heater 315 is used. It is easy to carry out. The bottom heater 3 1 5 is small enough to achieve the miniaturization of the device. It also uses a mechanism that directly cools the semiconductor substrate W itself. --------- ^ ------- -^ (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 84 312143 480580 A7 V. Description of the invention (85) It can also be used to switch between heating and cooling to change the electricity condition. Because of the small amount of electric ore liquid held on the semiconductor substrate W, it can be used for high-sensitivity temperature control. Therefore, the motor M is used to instantly rotate the semiconductor substrate W to turn the electric clock. The liquid evenly wets the surface of the electric boat, which is the main basin of the Dede ... The conductor substrate W is plated on the electric surface in a static state. Specifically, the semiconductor substrate M is set to 1 second or less. Rotate the electroplated surface of the semiconductor substrate W with a key liquid Wet evenly. Then let it stand still for 丨 minutes for electroless shovel. The instantaneous rotation time is also up to 10 seconds or less. I After the above electroplating process, lower the end of the plating solution recovery nozzle 365 to the semiconductor substrate w Near the inner side of the weir member 33 丨 on the outer periphery of the surface, suck the plating solution. At this time, if the semiconductor substrate w is rotated at a rotation speed of less than or equal to # 100rpm, the plating solution remaining on the semiconductor substrate w can be centrifuged. The weir member 331 concentrated on the outer periphery of the semiconductor substrate W can be used to recover the plating solution with high efficiency and high recovery rate. Therefore, the holding mechanism 311 is lowered away from the weir member 331 at the semiconductor substrate boundary, and the rotation of the semiconductor substrate w starts. The nozzle 353 of the washing liquid supply mechanism 351 sprays the washing liquid (ultra-pure water) on the semiconductor substrate ... The plated surface will be cooled while the plated surface is cooled, and the electroless plating is stopped by dilution and washing. At this time, the washing liquid sprayed from the nozzle 3 5 3 may reach the weir member 3 3 1 to perform the washing of the weir member 331 at the same time. The electroplating waste liquid at this time is recovered in a recovery container 361 and discarded. Also, once the used plating solution is no longer used, it is discarded after being used. According to the above-mentioned I and I orders, the amount of electroplating bath used can be extremely small compared with the previous one &amp; Zhang Chi thin Tiiii? 7GNS) Na (⑽ x 297 whore) S5 ------------ -Install -------- Order --------- line (please read the precautions on the back before filling this page) A7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (Them) and heated with 'semiconductor substrate fluid and peripheral heater 315, electron microscope ^. The heat insulation of the two lice is mainly carried out by the lamp heater 317.

Li is the same as the above-mentioned 34th embodiment, and a mechanism for directly or indirectly cooling the semiconductor substrate W is provided, and temperature control may be performed. "People use the electroless plating device shown in Fig. 27 above, and the electroless plating device shown in Fig. 41 with the dip rainbow &lt; U &quot; &quot; ΤΓ. The following are not experimental conditions and results. [Electrolytic Cu plating sample]; a barrier layer of hN (30 nanometers) and a seed layer (beta film) of Cu (50 nanometers) are formed on the silicon of a 8-inch semiconductor substrate. . [Plating method] (1) According to the plating method Y of the present invention, the semiconductor substrate w heated by the bottom surface heater 315 is placed on the si holding mechanism 311, and the semiconductor component w is fixed to the semiconductor substrate w. In a stationary state, no more than 30 milliliters of electroplating solution (50.00) is supplied from the shower head 341 within 5 seconds. Here, the semiconductor substrate W is rotated at 100 rpm for no more than 2 seconds, so that the electric money liquid Wet evenly on the surface of the semiconductor substrate w, and keep it for 1 minute in a static state. Then, the electroplating solution is recovered by the electric liquid recovery nozzle 3 65, and the weir member 331 is moved away from the surface of the semiconductor substrate w. A washing liquid (ultra-pure water) was supplied to the semiconductor substrate w surface for 30 seconds to wash the water to stop the plating reaction. The supply of the washing liquid was stopped and the semiconductor substrate w was spin-dried (1000 rpm, 30 seconds) and taken out. (2) According to the conventional example Electroplating method M's Zhang scale · Γΐ3 Guan Jiaxian (CNS) A4 Lin (21G X @ 7 ^) • ------------- Installation -------- Order-- -----.— Line (Please read the precautions on the back before filling this page) 480580

V. Description of the invention (δό) Ministry of Economy Zhihui • Property, Employees> Printed by Xiao Fei Heshe The reason is that the amount of electricity and liquid that is discarded is no longer used. In accordance with the situation, the χ solution recovery nozzle 365 collects the used plating solution and washing solution in the recovery container 361 together. ; 疋〗 The semiconductor substrate w is spin-dried at a high speed by a motor M and then taken out from the holding mechanism 311. 〃 Fig. 28 is a schematic structural diagram of a non-electrolytic money device constructed according to another embodiment of the present invention. The difference from the above embodiment in Fig. 28 is that the holding mechanism 3 11 replaces the bottom surface heater 3 1 5 and the lamp heater (heating mechanism) 3 17 is set above the holding mechanism 311 to heat the lamp. The device 317 and the leaching head 341-2 are integrated. That is, for example, most of the ring-shaped lamp heaters 3 17 with different half-lengths are arranged in a concentric circle shape, and the nozzles 343-2 of the majority of the drip head 341-2 are looped from the gap between the lamp heaters 317. Opening. Also as the lamp heater 317, it may be constituted by a swirling single-tube lamp heater, or it may be constituted by other various structured and arranged lamp heaters. With such a structure, the plating solution can be supplied from each of the nozzles 3 43-2 to the plated surface of the semiconductor substrate W in a liquid-like manner, and the lamp heating Is 317 can be used to directly and uniformly heat the semiconductor substrate. Insulation. When the lamp heater 317 is used, in addition to the semiconductor substrate W and the plating solution, since the surrounding air is also heated, it also has a thermal insulation effect on the semiconductor substrate. When the semiconductor substrate W is directly heated by the lamp heater 317, the lamp heater 317 which requires a large power consumption is replaced by a lamp heater 317 with a lower power consumption and the bottom surface heating shown in FIG. 27 above. 315 This paper size applies to China National Standard (CNS) A4 specifications (2] 〇X 297 mm) &quot; &quot; * · 一, ^ -------- Order --------- Please read the precautions on the back before filling this page} 312143 86 B7 V. Description of the invention ㈨) Steps: Place the semiconductor substrate w on the holding mechanism 81, and rotate the semiconductor substrate W at 40 rpm while rotating 70t: The plating solution was continuously dropped on the center of the semiconductor substrate w at 1 minute (004 liters / minute). After the dripping of the key liquid is finished, the semiconductor substrate W is continuously rotated while the semiconductor substrate W is continuously washed, and the semiconductor substrate W is supplied with water to the semiconductor substrate W to be washed with water for a second time, so that the electric power is stopped. Then, the semiconductor substrate W is taken out from the holding mechanism 81 and dried by another dryer. Figures 29A and 29B are graphs showing the measurement results of the film thickness on the X-axis of the semiconductor substrate W subjected to electroless plating using the above methods. Fig. 29A is a diagram showing the distribution in the thick surface of the electroless Cu film of this electroplating method, and Fig. 29B is a diagram showing the electroless Cu 电解 thick surface cloth of the conventional electricity method. Figs. 29A and 29B are horizontal Where the axis is the wafer (substrate), the vertical axis is the thickness of the plating film. As shown in FIG. 29A and FIG. Mb, the plating method according to the present invention has a uniform plating thickness across the entire semiconductor substrate w. In contrast, according to the conventional plating method, the central film thickness of the semiconductor substrate W is extremely thin. The inventor of the electron microscope method has a unique improvement in the uniformity of the plating thickness. As mentioned above, the embodiments of the present invention have been described, but the present invention is not limited to the above-mentioned embodiments, and various changes are possible within the scope of the patent application and the scope of the technical ideas described in the description and drawings. For example, the electroless plating device of the present invention is not limited to the formation of a seed layer or a copper layer for wiring, and it can also be used for the formation of wiring protection. In addition, the electroless plating device related to the present invention can be used in the process of processing electrolytic media before plating. For example, the above-mentioned implementation of the W standard is applicable to China Λ 312143-.......-------- Order-- ------ ^-线 * · (Please read the notes on the back before filling out this page) 88 480580 A7 _ B7 1 Μ. V. Description of the invention (89) The shape of the system is from the leaching head 34 1 will be electrolytic The electroplated surface supplied with the plating solution to the semiconductor substrate w is subjected to electroless plating, and the electrolytic plating solution is supplied in other steps, such as a pre-treatment step or a catalyst treatment step for supplying electrolytic plating from the shower head 34 1 The processing liquid, these processing steps and the electroless plating steps can be performed in the electroless power mining apparatus together. In the above embodiment, the plating solution is plated in a static state while the plating solution is held on the surface to be plated, and it can also be rotated slowly to the extent that uneven plating does not occur. In addition, as long as the plating solution is distributed on the surface to be plated, it is not limited to the drip head as long as it can be supplied. For example, a nozzle for supplying the plating solution while swinging or swinging in a plane may be provided. In the above κ configuration, the washing solution is supplied with the washing liquid for washing in a state where the holding mechanism 311 is removed from the weir member 331 in the washing step after electroplating, or in a state where the holding mechanism 311 is not removed from the weir member 331. The washing liquid is directly supplied, and the washing liquid overflows from the upper part of the weir member 331 for washing. The washing liquid is supplied to dilute the plating solution remaining inside and reduce the liquid temperature, thereby stopping the electroless plating reaction. Instead of dropping the holding mechanism 3m down and lifting the holding mechanism 311 to move the two away. When the semiconductor substrate w is heated by the bottom surface heater 315 (especially from the beginning of heating to the contact of the plating solution), in order to prevent oxidation of the plated surface of the semiconductor substrate w, argon (Ar) gas is used for its passivation. Gas = whisk is better. When a seed layer is exposed on the surface of the semiconductor substrate W by sputtering or the like, the surface may be oxidized during heating. In order to prevent this, the use of a plating layer with a uniform thickness on the seed layer is particularly effective. 89 Ordering Ϊ Paper Standards CNS A4 Specification ⑵ Qx 297 Public Love-) 312143 ^ 0580

V. Description of the Invention (In the above embodiment, as the heating mechanism of the semiconductor substrate ~, the bottom surface heater 315 or the lamp heater 317 may be used, and a heater may be provided at other positions near the substrate. It is also used instead of the heater, or The material of the heater is used to make the temperature of the plated electroplating treatment of the surrounding gas during electroless plating (appropriate temperature for the plated surface of the reaction surface) approximately equal, which can prevent heat generation and keep the processing temperature constant. The heated gas can be supplied around the substrate at the time. + In the above embodiment, as the step of contacting the electroplating treatment liquid supplied to the substrate surface to be charged, the substrate can be rotated / swiped in addition. The main point can also be the step of using the substrate to operate or the supplied electroless microscopy treatment liquid to act to bring the electroless electricity treatment liquid into contact with the entire surface of the electricity surface. That is, the etching pot 7 j F moves the substrate. The steps are, for example, after the supply of the electrolytic electron microscopy processing solution, Wu You-she is exposed to plate motions, swings, etc., so that the supplied electroless plating processing solution is actuated. Niu Su in the step of moxibustion moxibustion, the supplied electroless plating treatment liquid is used to agitate parts, or to blow air on the liquid surface, etc. As detailed above, according to the same situation as in this post, It has the following excellent effects: (1) Helmet iridium on the surface of the mine being mined ... The plating solution is stored for a selected period of time, so that the cost of the surface to be plated can be reduced. There is no electrolytic plating treatment. Pumps for liquid supply can be used by small ones, which can achieve the miniaturization of electroless plating equipment. The cost of the clean room that houses the equipment can also be reduced. Because the amount of processing liquid used in the electroless plating place is small, The temperature and heat preservation of the electroless plating treatment liquid are easy to be applied immediately, and because there is not a lot of non-electrolytic plating treatment liquid that is often heated up ________, it does not promote the electroless plating place. This paper is standard paper (CNS) A4 312143 ( (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -I ------- 1 ---- I ------------ -------- h ----- 90 480580 A7 Ministry of Economic Affairs Hui • Property • Bureau Λ. Consumers • Printed by Fei He V. Description of the invention (91) The deterioration of the physical fluid. (2) Due to the lack of thunder and lightning used φ Bi Yi ", Tai" ", 胄 plating treatment A small amount of liquid can be used, and there is no cost to directly discard it. Plus, you can often use fresh non-electrolytic key treatment liquid, which can ensure a certain composition of the treatment liquid, and the by-products generated by the day-to-day cycle of the garment will not be accumulated in the system. Easy access to the poles — Gu Wu can enter the stable electroplating and other places, the helmet plating solution analysis device or adjustment device, can ..., and the electric cable is also suitable for reducing the cost of the device and: to reduce the cost. There is no large amount of non-electrolytic processing solution for electro-money. It is not easy to generate particles from the structure parts of various devices without using fishing equipment. (3) Since the electroless ore treatment liquid is maintained on the surface to be treated for electricity, the other side will drop Yi Lei with a lamp ..., and the electrolytic private plating treatment liquid is dropped on the surface to be plated: the case where the surface is treated , Can make the processing conditions of each part of the plated surface the same 'up to the plated film formed | side to the fiber uniformity in the plane. Especially when the substrate is moved in a stationary state, compared to the situation where the substrate is rotated while the substrate is rotated 'because the exothermic heat of the rotation speed of the substrate does not occur, it is not necessary to lower the temperature to reach the uniformity of the reaction temperature. Get a stable process. (4) Since the substrate is heated to a temperature higher than the temperature of the electroless plating treatment liquid, the electroless plating treatment liquid is brought into contact with the surface to be plated of the substrate. When the temperature of the bell liquid rises to such a high temperature, the reduction of power consumption and the prevention of the full change of the power mineral liquid can be achieved. (5) When the electroless electricity treatment liquid supply mechanism is set on the upper part of the to-be-conducted surface to form a dispersible electroless plating treatment solution, the entire to-be-plated surface of the substrate can be roughly connected to the to-be-consumed surface. The electrolytic power ore treatment liquid is supplied at the same time, which can stably control the temperature of the electroless plating treatment liquid. (Please read the precautions on the back before filling in this page) 丨 Install 0 n n n ffi n-Order: 丨 Line -n u j-II «II · ΐPaper Scale_ ⑵G χ 297 Public Love) 91 312143

(Please read the precautions on the back before filling in this page) 480580 A7 V. Description of the invention (92) ^ ~~~ (6) The retaining mechanism with Qian holding the substrate, and sealing around the electric mine surface | The holding mechanism and the electroless ore treatment liquid supply mechanism of the electroless ore treatment liquid supply mechanism on the substrate sealed with the electroplating solution holding mechanism constitutes the electroless plating device, and is used as the electroless electroplating treatment liquid. For example, pre-treatment solution, catalyst treatment solution, electroless plating solution, etc. can be used instead. Therefore, it is possible to carry out __ a series of non-electrolytic electricity mining steps in a single pool, and to miniaturize the device. In the meantime, the 30th to 39th figures of the reference figure illustrate the third kind of the present invention. The third aspect of the present invention relates to various substrate processing apparatuses such as a substrate plating apparatus and a substrate polishing apparatus, and particularly relates to a substrate processing apparatus suitable for detecting a surface state of a substrate such as a film thickness of a processed substrate. This issue is a substrate processing device suitable for carrying and processing of all substrates. Here, we will specifically explain the case where it is suitable for film thickness measurement of copper electroplating devices and CMP devices used for wiring formation of semiconductor substrates. Fig. 30 is a plan view showing an example of a plating apparatus using the present invention. This electroplating device is provided with two wafer cassettes 510 and 510 in which a large number of substrates are incorporated, a substrate transfer robot 514 for removing substrates from the wafer cassettes 510 and 510, and electroplating, washing, and drying of the substrates. A series of electroplating processing steps such as these are constituted by two electroplating modules (substrate processing modules) 512, 512 performed in one unit. Further, reference numeral 518 denotes a liquid supply device having a mineral liquid cartridge 516. The structure of the above-mentioned plating module 512 is the same as that shown in FIG. 9, and the plating module 5 1 2 will be described with reference to FIG. 9. The electric clock module 5 12 can perform a series of processes such as electroplating, washing, and drying. That is, the substrate W is printed by using the substrate and printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs --- ^ --------- line I -------------- this paper Standards apply to China National Standard (CNS) A4 (210 x 297 mm) 92 312143 480580

V. Description of the Invention (93 Wisdom, Property, Bureau, Industrial Consumption, Feihe Printing and Holding Department 2-9 of the Ministry of Economic Affairs holds the substrate W upwards and holds it at three positions a, B, and C. Then the substrate W is moved in After being placed at position a, the cathode electrodes 2-17 are connected near the outer periphery of the substrate w at position B, and then a plating solution is supplied on the surface to be processed. 'The anode electrode (not shown) is brought into contact with the plating solution from the upper part, and voltage is applied for electrolysis. Electroplating. After the electroplating is completed, the electroplating solution on the substrate W is sucked with the suction nozzle shown in the figure, or instead, the washing water is supplied at position C, and the washing water runs through the entire substrate w by rotating the substrate holding portion 2-9. Carry out washing. After washing the bar, stop the supply of washing water and spin the washing water away from the spin drying by increasing the rotation speed of the substrate W. If necessary, apply a pre-treatment such as a surfactant before plating, and change the washing liquid. Multi-stage washing is performed on different types. The present invention is not limited to the electroplating module 5 12 configured as described above. That is, for example, the electric clock tank can be other cup-type or closed-type ones. At this time, the washing tank and the dryer can be individually installed. on the other hand As shown in FIG. 30, a robot hand 54 is provided at the end of the robot arm 542 of the transfer robot 514. Next, the overall operation of the plating apparatus will be described. First, the robot hand 540 takes out the substrate w from any wafer cassette 510 before processing. The substrate holding part 5 2 1 placed on any electroplating module 5 12 is subjected to a series of electroplating treatments as described above for the electroplating module 5 12 and dried. The dried substrates are then returned to the machine by using the robot hand 540 The wafer cassette 51 is used to pass the substrate W before processing and the substrate w after processing through the periphery of the transfer robot 514 to measure the thickness of the substrate w of the two. In the following embodiments, the film thickness is made. The sensor s is set on the handling robot 514 itself or its surroundings or inside the electroplating module 512, and it is set to handle the paper size applicable to China National Standard (CNS) A4 specifications _ (210 X 297 public love) 1 · ϋ I In nn · l tmmmw n Hi m In In I mma =: mnl flu ”, I nii tmmmmm in 1-1- I (Please read the precautions on the back before filling this page} A7 b / V. Description of the invention (94 ) 'The pass position of the soil plate w and the processed substrate ... The embodiment of the thickness sensor s sighed place and installation state is as follows comprehensive description, and its detailed description is omitted here. That is, when the film thickness sensor S is set at these positions, before and after processing The film thickness of the substrate w (the film thickness of the multilayer metal film thickness body formed on the substrate w) can be measured without needless action in a series of processing operations. Specifically, the substrate w passes through the film for the first time. For the thick sensor S, the film thickness of the substrate w with the seed layer on the surface before plating is measured. When the substrate w passes the thick sensor s for the second time, the metal film on the seed layer is measured. The film thickness of the substrate W was measured in the plated state. Then take the difference between the two to measure the thickness of the plated metal film. In addition, the film thickness of the seed layer is about 10 nanometers to about 1 to several tens of nanometers, and the metal film thickness of the Wei Dynasty is about several micrometers. In addition, a signal from the film thickness sensor S is sent to an arithmetic processing device, and a calculation is performed by taking a difference and taking a moving average to measure the film thickness. For the arithmetic processing device and method, any one suitable for the configuration and detection method of the film thickness sensor s can be arbitrarily selected. Fig. 31 is a plan view showing an example of a CMP device using the present invention. The device is equipped with wafer cassettes 531 and 531 for loading and unloading, and washing machines 533, 533, and 535 for washing substrates, and two transfer robots 514a and 514b, turning machines 539 and 539, and polishing. The units 541 and 541 are configured. There are various ways to move the substrate W, for example, as described below. First, the transporter H-man 514a takes out the original paper-size paper towels from Guanxi Xian (CNS) A4 specifications before processing from any wafer box 531 for shock loading. ------- 94 312143 480580 A7 V. Description of the invention (95) The substrate W is transferred to any turning machine 539. The transfer robot 51 is set to rotate without moving from the position shown in the figure, and can transfer the substrate W from the wafer cassette 531 to the position of the turning machine 539. The substrate w is turned by the turning machine 539 from top to bottom, and then transferred to another transfer robot 514b. The transfer robot 514b transfers the substrate w to any polishing unit 541 for polishing. The polished substrate w is transferred to any washing machine 535 by the transfer robot 5 14b and washed once. The substrate w after the primary washing is transferred to any turning machine 539 by the transfer robot 514b, and the processed surface is turned upside down, and then transferred to any secondary washing machine 533 by the transfer robot 51 乜. After the secondary washing is completed, The unloading wafer cassette 531 is again used by the transfer robot 514a. Therefore, in the case of the CMP apparatus, since the substrate w before processing and the substrate W after processing pass through the transfer robots 514a and 514b and the vicinity of the turning machines 539 and 539 are used to measure the film thickness of the substrates w, they are implemented as follows. In the example, the film thickness sensor S is provided at a position through which the substrate w before processing and the substrate W after processing such as the transfer robot 514a and 514b themselves or the periphery thereof pass. That is, when the film thickness sensor S is set at these positions, the film thickness of the substrate W before and after the processing can be measured in a needless operation without a series of processing operations. Specifically, for example, the film thickness of the substrate W before polishing is measured for the first time, and the film thickness of the substrate w after polishing is measured for the second time, and the difference between the two is used to measure the polishing amount. If an optical sensor is used, the film thickness of the metal film or the insulating film can be directly measured without taking the difference between the two. -------------- Install --- (Please read the precautions on the back before filling out this page). -Line-Intellectual Property of the Ministry of Economic Affairs • Bureau Applicable to China National Standard (CNS) A4 specification (210 X 297 mm)% η V. Description of the invention (96) In addition, in the CMP device, the above-mentioned dual-machine humans 514a and 514b can also be handled according to Section 31. As shown by the arrow A in the figure, 1 τ universal movement can be applied to the present invention in any case. Fig. 32 is a diagram showing an example of using the electric money and cMp device of the present invention. The difference between the plating and CMP device and the device shown in Fig. 31 is that the washing machine seal which replaces it is included in the first The electroplating module 512 'shown in FIG. 9 is provided with a spin dryer 534 instead of another washing machine milk. The movement of the substrate W is, for example, as described below. First, the transfer robot 514a takes out the processed substrate W from any of the loading wafer cassettes 531, and after the plating module 512 is subjected to the plating process, the transfer robot "乜 transfers the soil plate w to any inverting machine 539 to be processed. After the plating surface is facing down, it is transferred to another transfer robot 514b. The transfer robot 514b transfers the substrate w to any of the light removal units 541 for selected polishing. The polished substrate W is removed by the transfer robot 514b and washed in any After the machine is washed, it is transferred to another polishing unit 5 41. After re-grinding, it is transferred to another washing machine 535 for cleaning by the transfer robot 514a. The washed substrate w is transferred to another turning machine by the transfer robot 514b for being turned over by the processing surface. After facing upward, it is transferred to the spin dryer 534 by a transfer robot to spin dry, and then transferred to the unloading wafer cassette 531 by the transfer robot 514a. Therefore, when using this plating and CMP device, the film thickness sensor s is also It is installed on the substrates such as the transfer robots 514a and 514b or their surroundings or inside the plating module 512, and the substrates before processing and the substrates after processing The 96-Benz scale is applicable to China ^^ standard specifications ⑵Q X 297 public love>---312143 480580 V. Description of the invention (97 passed position. Next, the sensor for film thickness measurement installed in the above plating and CMP device will be explained Specific examples of S...-(Please read the precautions on the back before filling out this page) Figure 33 shows the handling robot shown in Figure 30 or Figure 31 and the handling robot shown in Figure 32 514a and 514b are perspective views. Figs. 34A and 34B show the robot hand 540 installed on the above-mentioned handling robot 514 (514a, 514b), and Fig. 34 and Fig. 8 are top views, and Fig. 3 and 4B are side sectional views. The transfer robot 514 (514a, 514b) is formed by attaching robot hands 540 and 540 to the ends of two robot arms 542 and 542 mounted on the upper part of the robot body 543. The two robot hands 54 and 54 are installed. It overlaps up and down through the selected gap. Therefore, it is possible to carry the substrate W on the robot hand 540 forward and backward by the telescopic movement of the robot arm 542. The substrate can also be rotated and / or moved by the robot body 543 ... Predecessor The direction of moving-line-transportation. Wisdom of the Ministry of Economic Affairs-Consumers and Consumers. The fee co-operative society printed it, and as shown in Figure 34A and Figure 34B, the robot 54 was directly embedded with four film thickness sensors S installed. As the film thickness sensor s, it is only necessary to be able to measure the film thickness, and it is better to use an eddy current sensor. The eddy current sensor uses the eddy current generation to detect the connection and return to the substrate W. The device for measuring the frequency of the current and the loss film thickness is used for non-contact. Furthermore, it can be suitably used as an optical sensor for the film thickness sensor S. The optical sensor is a device that irradiates the sample with light and directly measures the film thickness from the information of the reflected light. Not only the metal film but also the film thickness of the insulating film such as the oxide film f ° The setting position is not limited to those shown in the figure, but can be measured at ^ paper rule, money and money-public love)-97 312143 480580

V. Description of the Invention (½) Any one of the 98 offices printed by the Consumers' Cooperatives of the Ministry of Economy and the Intellectual Property Office is installed. In addition, the robot arm 54 has a dry robot arm for a dry substrate and a dry robot arm for a wet substrate. Any of the film thickness sensors S can be installed. However, when the transfer robot 514 is used in a plating apparatus as shown in FIG. 30, it is necessary to measure the film thickness of the first substrate w in a state where only the seed layer is attached, and a measurement device is provided in the wafer cassette 510. The thickness of the substrate W in the dry state is required. Therefore, it is desirable to mount the film thickness sensor S on a dry robot. The signal detected by the film thickness sensor S is sent to a computing device to perform calculations such as processing the difference between the film thickness of the substrate W and the processed substrate w, and output the film thickness to a selected display or the like. The calculation method need only be any method that can properly measure the film thickness. According to this embodiment, since the film thickness can be measured while the substrate w is being transported by the robot hand 54, it is not necessary to separately set a film thickness measurement step in the substrate processing step, and effects such as not reducing the productivity can be obtained. Because the film thickness sensor is installed on the robot hand 540, it can save space. 35A and 35B are diagrams showing the transfer robots 514, 514a, and 514b shown in the above 30 or 31 using a second example of the present invention. FIG. 35A is a schematic plan view, and FIG. 35B is a schematic view. Side view. As shown in FIG. 35A and FIG. 35B, five film thickness sensors s are installed below the robot hand 540 of the robot body 543 in this embodiment. That is, a disk-shaped mounting plate 545 having a size substantially equal to the size of the substrate w is provided at the lower portion of the robot hand 540, and five upright sensors s are mounted on the mounting plate 545. The women's board 545 is fixed to the robot body 543, but it can also be fixed to other parts. 312143-, --------------------- Order --------- line (Please read the precautions on the back before filling this page) 5. Description of the Invention (99) As shown in the figure, each of the film thickness sensors S can be used to measure the film thickness of a wide area of the entire substrate w since the film thickness sensors S are installed at non-overlapping positions. According to the invention, the space saving can be implemented, and the measurement can be completed in a very short time. Therefore, the thickness of the fixed point of the substrate w can be measured by stopping the substrate w on the mounting plate 545. On the other hand, if it is not stopped, the substrate w on the robot 54 can be scanned by the mounting plate 545. The cat measures it. Because the film thickness sensing benefit S system is integrated with the robot body 543, it can be detected stably. In addition, when the + mounting plate 545 is not fixed to the robot body 543 and fixed to other components, the distance between the substrate w and the sensor ^ can be adjusted by arbitrarily changing the height of the robot hand. The point where the signal after detection is sent to the arithmetic device for film thickness measurement is the same as the embodiment shown in Figs. 34A and 34B. However, in the case of measuring while measuring the blindness, since the measurement point changes with the passage of time, it is also good to use the moving average method to calculate the film thickness. 36A and 36B are diagrams showing a third example of the present invention, FIG. 36A is a schematic plan view, and FIG. 36B is a schematic side view. The embodiment shown in Figs.% A and 36B is provided with two thick-thickness sensors S above the entrance and exit portion 550 of the substrate w of the plating module 512 shown in Figs. 9 and 36. That is, a rectangular mounting plate 551 is provided on the upper portion of the entrance portion 55 °, and three 臈 -thickness sensors S are installed below the mounting plate 55 丨. The mounting plate 551 may also be fixed to the electroplating module 512, the robot body 543 of the carrying robot 514 (not shown), or other parts other than these. When constructed in this way, regardless of whether the substrate W is moved into or out of the power module 5 1 2 degrees, the fiiiT ticket standard (CNS) A4 specification (2; x __ one — 99 312143 8 (5ο 8 Intellectual Property Bureau employee consumer cooperatives) Printed A7 — __ _B7__ 5. When the invention is explained (deleted), the film thickness sensor S can scan the substrate w, so it is suitable for scanning measurement s. Another example is to implement the complaint by setting several columns The film thickness sensor s can be scanned and measured at any point on the substrate w. Moreover, the distance between the substrate w and the sensor can be adjusted by arbitrarily changing the height of the robot hand. Sensing with the film thickness The signal detected by the device S is calculated by an arithmetic device, and it is better to use the same moving average method as the second example for the scanning and processing when scanning and measuring. When the CMP device adopts this embodiment, it is shown in FIG. 31 and FIG. The polishing unit (substrate processing module) 541 shown can be provided with a film thickness sensor S near the entrance and exit of the substrate w. When the substrate w is moved into the light removal unit 541, the processed side of the substrate W faces Next, the film thickness sensor S is set in the polishing unit 541 and the substrate W is withdrawn. The lower side is better (of course, the film thickness sensor S can also be set on the upper side to measure the film thickness, and the lower side has higher accuracy) ° After the polishing is completed, the processed surface of the substrate W is in a wet state. Using a film thickness sensor that can also measure in a wet state, the film thickness can be measured in the same way as in the case of the above-mentioned% ore module 512. Figure 3 7 is a flip machine using the fourth example of the present invention 5 3 9 Nearby schematic front view, Fig. 38 is a top view of the flip arms 553 and 553. As shown in Figs. 37 and 38, the flip arms 553 and 553 clip the substrate ... It has the function of turning it over by 18. It can turn the turning arm 5 53 and 553 (turning table) directly below the circular mounting table 555, and a large number of film thickness sensors S are installed on the mounting table 555. The mounting table 5 5 5 uses the driving mechanism 5 5 7 to be configured to move up and down freely. The paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm 1 ~ — 100 312143 (Please read the notes on the back first) (Please fill in this page again for more information)-丨 Install --- Order -------- ^ line I --------------- -I J- n 1 1 n I. 480580 A7 Printed by the Ministry of Economic Affairs • Wisdom, Property, Consumption, and Feisha. V. Description of the Invention (101) When the substrate W is turned over, the 'mounting table 555 stands by the solid line position below the substrate w Before or after flipping, raise the mounting table 555 to the position shown by the dotted line to flip the film thickness sensor s, and measure the film thickness near the substrate W held by the flip arms 553, 553. According to this embodiment, since the transfer robot 514 Since the robot arm 542 and the like are not limited, the film thickness sensor S can be set at any position on the mounting table 555. In addition, since the mounting table 555 is configured to move up and down freely, the distance between the substrate W and the sensor can be adjusted during measurement. In addition, a variety of sensors can be installed according to the purpose of detection, and the distance between the substrate w and the sensors can be changed one by one during the measurement of each sensor. However, since the mounting table 555 moves up and down, it takes a little measurement time. Fig. 39 is a sectional view of a main part of a plating module 512 using a fifth example of the present invention. The electric clock module 512 is different from the electroplating module 512 shown in FIG. 9 in that the film thickness sensor is installed directly under the board holding portion 2_9 (the electric stage) holding the substrate w. The setting point of the 3 mounting table 559 is just that. The film thickness sensor 3 can be installed anywhere on the mounting table 5 =. In this embodiment, a film thickness sensor s is provided directly below the plating station, so that the film thickness measurement can be performed immediately on the surface-plating-surface. Therefore, the real-time feedback of this measurement society is reflected in the electroplating, which can be used to make electricity with extremely high accuracy. In the foregoing, the embodiments of the present invention have been described, but the present invention is not limited to the above-mentioned embodiments. It is possible that various changes within the scope of the technical ideas described in the description and drawings are possible. . That is, for example, the application form above shows the use of film thickness ^ is the film thickness of the film or the insulation film) detection of salty paper paper standards applicable to Chinese national standards 297 public-=-101 312143 --------- ----- Equipment -------- Order --------- line (Please read the notes on the back before filling in this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 480580 A7 -_B7 V. Description of the Invention (10) The state measurement is an embodiment of the sensor, but the present invention is not limited to the sensor. By using 2 sensors and calculation mechanisms for various purposes, the use of metal thin film ... Sensors for detection, sensors for the presence or absence of particles on the board, sensors for recognition of patterns formed on the substrate, etc., and other various board surfaces = sensors used for detection Yes. Any shape or material not directly described in the description and drawings is still within the scope of the technical idea of the present invention as long as the effect of the present invention can be achieved. As explained in detail above, according to the third aspect of the present invention, each of the metal film thickness of the substrate, etc. can be detected without stopping or interrupting the substrate processing steps. Therefore, a high-throughput can be detected at the same time. The surface is sad, which can improve the reliability and speed of substrate processing such as plating and polishing. In addition, the measurement results can be fed back to adjust the substrate processing conditions. Therefore, substrate processing such as plating and polishing can be performed quickly under the optimal processing conditions. Furthermore, when a lightweight and small person is used as a sensor, it can be simply = a robot of a plating device, etc., and the above can be implemented while saving space. The present invention relates to a semiconductor substrate for performing various processes on the semiconductor substrate. The processing device and processing method can be used in a step of electro-mineralization when forming a circuit wiring on a semiconductor substrate and a step of polishing a Cu plating film on the semiconductor substrate when manufacturing a semiconductor element.

Applies to Chinese National Standard (CNS) A4 specifications (2! 〇297 mm) as far as possible paper size. J ^ -------- ^ --------- line (please read the precautions on the back first) Fill out this page again} 10?

Claims (1)

480580 VI. Application for Patent Scope 1. A semiconductor substrate processing device whose Xiaozheng is equipped with: a semiconductor substrate with a circuit formed on its surface in a dry state, moved out and moved in and out; (Please read the precautions on the back before filling in this Page) A metal plating film forming unit for forming a metal electricity film on the semiconductor substrate that has been carried in; an oblique angle remaining unit for engraving the surname of the outer periphery of the semiconductor substrate; a metal plating film for the semiconductor substrate A polishing unit for polishing at least a part of the polishing unit; and a transfer mechanism for transferring the semiconductor substrate between the units. 2. The semiconductor substrate processing apparatus according to item 1 of the patent application scope, further comprising a strip washing unit for washing the above-mentioned semiconductor substrate. 3. The semiconductor substrate processing apparatus according to item 1 of the scope of patent application, which includes a tempering unit for tempering the semiconductor substrate. 4. The semiconductor substrate processing apparatus according to item 1 of the application, wherein the metal plating film forming unit is an electrolytic plating unit. Member of the Ministry of Economic Affairs, Intellectual Property, Production Bureau, and Consumer Clothing Co., Ltd. 5. Printing of semiconductor substrate processing equipment such as the scope of patent application No. 1 which includes the film thickness and / or surface state of the film formed on the semiconductor substrate. Film thickness measurement and / or inspection sensor for measurement and / or inspection. 6. The semiconductor substrate processing device according to item 5 of the patent application, wherein the above-mentioned thickness measurement device and / or detection sensor are before or after the barrier layer is formed, and before or after the seed layer is formed. After the metal plating film is formed, or the paper ruler Guan Jiaxian (CNS) A4 specification is published) 312143 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 480580 A8 B8 C8 ____ D8 --------- ----- 6. Scope of patent application After film formation, before or after tempering treatment, before or after grinding treatment, covering at least one of the time points before or after plating or film formation is measured and / or detected . 7. The semiconductor substrate processing apparatus according to item 1 of the patent application scope, wherein a seed layer film forming unit is provided to form a seed layer. 8_ The semiconductor substrate processing apparatus according to item 7 of the application, wherein the seed layer film forming unit is an electroless plating unit. 9. The semiconductor substrate processing apparatus according to item 1 of the patent application scope, wherein the semiconductor substrate processing unit has a reinforcing seed layer film forming unit for forming a reinforcing seed layer on the semiconductor substrate. 10. The semiconductor substrate processing apparatus according to item 9 of the patent application scope, wherein the above-mentioned reinforcing seed layer forming unit is an electroless electricity mining unit. 11. The semiconductor substrate processing device according to item 9 of the patent application, wherein the above-mentioned reinforcing seed layer film-forming unit is an electrolytic plating unit π 12. The semiconductor substrate processing device according to item 1 of the patent application, which is provided for the semiconductor The barrier layer forming the barrier layer on the substrate becomes 7G. 13. The semiconductor substrate processing apparatus according to item 1 of the scope of patent application, wherein the semiconductor substrate processing apparatus has a cover plating unit for forming a cover plating layer on the semiconductor substrate. 14. The semiconductor substrate processing apparatus according to item 1 of the patent application range, wherein the polishing unit is composed of at least a first polishing unit and a second polishing unit. The material of the polishing object of the first polishing unit and the second polishing unit is different. LI1I1IIIIIII1 · 11111! 1 11111111 (Please read the notes on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 104 312143 6. Application for patent scope 15. If applying for a patent In the semiconductor substrate processing apparatus of the scope item, the above-mentioned polishing unit is composed of at least a first polishing unit and a second polishing unit. The materials of the polishing object of the first polishing unit and the second polishing unit are the same. 16. According to the application of Fengfeng Conductor Substrate Processing Device in the scope of the patent application, wherein the polishing unit is composed of at least a first polishing unit and a second polishing unit, and the semiconductor substrate is polished using the first polishing unit and then using the second polishing Unit grinding. 17. The semiconductor substrate processing apparatus according to item 丨 of the application, wherein the semiconductor substrate processing apparatus has two or more grinding units, and the semi-iron substrate is ground by any one of the grinding units. 18. The semiconductor substrate processing apparatus according to item 丨 of the application, wherein the polishing unit includes at least two polishing steps. 19. A semiconductor substrate processing apparatus, comprising: a carry-in and carry-out section for carrying in and out a semiconductor substrate having a circuit formed on a surface thereof in a dry state; and a metal plating film forming a metal plating film on the semiconductor substrate that has been carried in. A film unit; an oblique angle engraving unit for engraving the outer periphery of the semiconductor substrate; a polishing unit for polishing at least a part of the metal plating on the semiconductor substrate; and carrying the semiconductor substrate between the units The paper size of the conveyor is suitable for the family_CNS A4 size ⑽X 297 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Public Welfare and printed 480580 I C8 ______ 6. The scope of the patent application, and: The unit and the above-mentioned bevel etching unit can be replaced freely. 20. The semiconductor substrate processing apparatus according to item 19 of the scope of application, which includes a washing unit for washing the polished semiconductor substrate, a metal plating film forming unit, a bevel etching unit, and a washing unit. Can be replaced freely. 21. The semiconductor substrate processing device according to item 19 of the scope of application for a patent, which includes a tempering unit for tempering the semiconductor substrate, a metal plating film forming unit, an oblique engraving unit, and the above. The tempering unit can be replaced freely. 22. The semiconductor substrate processing apparatus according to item 19 of the scope of patent application, further comprising a film thickness measuring unit for measuring and / or detecting a film thickness and / or a surface state of a film formed on the semiconductor substrate, and The metal plating film forming unit, the above-mentioned bevel etching unit, and the above-mentioned thickness measurement unit can be replaced freely. 23. The semiconductor substrate processing device according to item 19 of the patent application, including a reinforcing seed layer film forming unit for forming a reinforcing seed layer on the semiconductor substrate, the metal plating film forming unit, and the oblique etching unit. , And the above-mentioned reinforcing seed layer film forming unit can be replaced freely. 24. The semiconductor substrate processing device according to item 19 of the scope of application, wherein the seed layer film forming unit provided on the semiconductor substrate to form a seed layer, and -L ^ -------- ^ --- ------ ^ (Please read the notes on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (21〇χ 297 mm) 106 312143 480580 VI. Patent Application The plating film forming unit, the bevel etching unit, and the seed layer film forming unit can be replaced freely. 25. The semiconductor substrate processing apparatus according to item 19 of the scope of application for a patent, which includes a barrier layer film forming unit for forming a barrier layer on the semiconductor substrate, and the metal plating film forming unit, and the bevel etching unit. And the seed layer film forming unit and the barrier layer film forming unit can be replaced freely. 26. The semiconductor substrate processing apparatus according to item 19 of the scope of patent application, which includes a cover plating unit for forming a cover plating layer on the semiconductor substrate, a metal plating film forming unit, and a bevel etching unit, and The cover plating unit can be replaced freely. 27_—A semiconductor substrate processing apparatus, comprising: a carry-in and carry-out section for carrying out a semiconductor substrate with a circuit on a surface shape and a circuit in a dry state; and a metal plating film for forming a metal plating film on the semiconductor substrate that has been carried in Forming unit; an oblique angle etching unit that removes at least one layer of the metal plating film, the seed layer, and the barrier layer formed on the outer periphery of the semiconductor substrate; a tempering unit for tempering the semiconductor substrate; And a transport mechanism for transporting the semiconductor substrate between the units. Packing -------- Order --------- Μ (Please read the precautions on the back before filling in this page) i Paper size Shicai Guanjia Xian &amp; NS) A4 size (210 X 297 mm) 312143 VI. Patent application scope 28. For the semiconductor substrate processing device of item 27 of the patent application scope, the metal plating film forming unit, the bevel etching unit, and the tempering unit can be replaced freely. 29. The semiconductor substrate processing apparatus according to item 27 of the application for a patent, further comprising a film thickness measuring unit for measuring and / or detecting a film thickness and / or a surface state of the film formed on the semiconductor substrate, At the same time, the metal plating film forming unit, the bevel etching unit, the tempering unit, and the film thickness measuring unit can be replaced freely. 30. The semiconductor substrate processing apparatus according to item 29 of the patent application scope, wherein the film thickness measurement unit has an alignment function of the semiconductor substrate. 31. The semiconductor substrate processing apparatus according to item 27 of the application for a patent, wherein in the metal electro-membrane film forming unit, the semiconductor substrate is held by a substrate holding portion, and plating processing and washing processing are performed on the same. 32. The semiconductor substrate processing device according to item 27 of the application for a patent, wherein the metal plating film forming unit includes a substrate holding portion that holds the semiconductor substrate, and an anode disposed above the plated surface of the substrate, and and The substrate is in contact with a cathode electrode that is energized, and an electroplating solution impregnating material made of a water-retaining material is arranged in the space formed between the surface to be plated and the anode, and electroplating is performed. 33. The semiconductor substrate processing device according to item 27 of the application for a patent, wherein in the metal plating film forming unit, the semiconductor substrate is held by a substrate holding portion, and the semiconductor substrate is processed by corresponding dynamic drying processing while Position lifting for electroplating, washing 2 /, Shen Qing Patent Scope 14 · Semiconductor device for treating patents as claimed in item 27, where the metal electrical chain film forming unit is provided with the semiconductor substrate with the charged surface facing up At the same time of holding, by sealing the outer peripheral portion of the plated surface of the semiconductor substrate as a water-tight seal, the anode is placed close to the electro-forged surface and is in contact with the semiconductor substrate so as to energize the cathode surface. Electroplating is performed while the plating liquid is maintained in a space formed by being sealed with the surface of the semiconductor substrate to be electrically charged. ti 35. The semiconductor substrate processing device according to item 27 of the scope of patent application, wherein the metal plating film forming unit includes a substrate holding portion that holds the semiconductor substrate with a plated surface facing upward, and a plated surface disposed on the substrate The upper anode ', the cathode electrode which is in contact with the substrate to be energized, and the nozzle for supplying pure water, and after the plating process is completed, the semiconductor substrate and the cathode are simultaneously washed by supplying pure water from the nozzle. 36. A semiconductor substrate processing apparatus, comprising: a semiconductor substrate on which a circuit having a circuit formed on a surface is carried out in a dry state, and a carry-in and carry-out unit; and a metal electrode forming a metal plating film on the semiconductor substrate that has been carried in. Coating film forming unit; a grinding unit that grinds at least a part of the metal electric money film formed on the semiconductor substrate; and a conveying mechanism for conveying the semiconductor substrate between the units, at the same time as the metal electricity In the coating film forming unit, the semiconductor substrate is held by the substrate holding part, and the plating treatment and strip washing are performed on the same side. This paper size is applicable to f _ house standard (CNS) A4 specifications ⑽χ 297 public love? ^^ Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau 37. A semiconductor substrate processing apparatus, comprising: a carrying-in and carrying-out section for carrying in and out a semiconductor substrate on which a circuit is formed on a surface; and a metal plating film for forming a metal plating film on a semiconductor substrate that has been carried in A film forming unit; a polishing unit that grinds at least a part of the metal plating film formed on the semiconductor substrate; and a transport mechanism for transferring the semiconductor substrate between the units, and at the same time: the metal plating film forming unit A substrate holding portion for holding the semiconductor substrate, an anode disposed on the plated surface of the substrate, and a cathode electrode in contact with the substrate to be energized are charged between the plated surface and the anode. The electroplating solution impregnating material made of the water-retaining material is arranged in a space for electroplating. 38. A semiconductor substrate processing apparatus, comprising: a semiconductor substrate on which a circuit having a circuit formed on a surface is carried out in a dry state; and a carry-in and carry-in unit: a metal plated film that forms a metal plated film on the semiconductor substrate that has been carried in A film forming unit; a polishing unit that grinds at least a portion of the metal plating film formed on the semiconductor substrate; and a transport mechanism that transports the semiconductor substrate between the units, and at the same time: (Please read the precautions on the back before filling out this page): 297 mm) 312143 Printed by the Consumer Property Cooperative 51, Ministry of Economic Affairs 51 Printed by 480580 6. The patent scope of Shenjing is in the above-mentioned metal t-coated film-forming unit. = The holding surface of the substrate holding portion performs electric power processing, washing, and drying processing by lifting and lowering the semiconductor substrate corresponding to each operating position. 39. A semiconductor substrate processing device, comprising: a semiconductor substrate having a circuit formed on a surface thereof in a dry state, and a carry-in and carry-out portion; and a metal electrode formed with a metal plating film on the semiconductor substrate that has been carried in. Coating film forming unit; a polishing unit that grinds at least a part of the metal plating film formed on the semiconductor substrate; and a transport mechanism for transferring the semiconductor substrate between the units, and at the same time: forming the metal plating film into a film The unit includes holding the semiconductor substrate with the plated surface facing upward, and sealing the outer peripheral portion of the semiconductor substrate with the plated surface as a watertight seal. The anode is disposed close to the plated surface, and the The cathode electrode, which is energized by contacting the semiconductor substrate, is charged while holding the plating solution in a space formed by being sealed to the plated surface of the semiconductor substrate. 40. The semiconductor substrate processing apparatus according to claim 39, wherein a plating solution impregnating material made of a water-retaining material is arranged in a space formed between the surface to be plated and the anode, and the plating is performed. 41. A semiconductor substrate processing device, comprising: a semiconductor substrate having a circuit formed on a surface thereof in a dry state, and a loading and unloading unit; nnnnnunnnnn I · nn ft mn I n-nnn I ndn I (Please read first Note on the back page, please fill in this page again) This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) 111 312143 480580 A8 B8 C8 D8 VI. Patent application scope Form metal on the semiconductor substrate that has been moved in Metal plating film forming unit for plated film; • 4 ------------ Shang --- (Please read the precautions on the back before filling this page) will be opened on the semiconductor substrate A polishing unit for polishing at least a part of the metal plating film; and a transport mechanism for transporting the semiconductor substrate between the units, and at the same time: the metal plating film forming unit is provided with a% plating surface of the semiconductor substrate facing A substrate holding portion held on the top, and an anode arranged above the surface to be plated of the above substrate, and a cathode in contact with the semiconductor substrate to make it private The electrode 'and the nozzle for supplying pure water are supplied with pure water from the Hai nozzle after completion of the electric ore treatment, and the semiconductor substrate and the cathode are washed simultaneously. 42, A semiconductor substrate processing apparatus, comprising: a wire_a carrying-in and carrying-out section for carrying out a semiconductor substrate on which a circuit is formed on a surface in a dry state; and forming a metal plating film on the semiconductor substrate that has been carried in Plating film forming unit; a consumer unit of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a grinding unit that grinds at least a part of the metal plating film formed on the semiconductor substrate; and the above | conductor substrate is between the above units; The transporting mechanism and the above-mentioned metal plating film forming unit simultaneously hold the semiconductor substrate with the electronic surface facing i, and seal the outer peripheral portion of the semiconductor substrate with the plated surface as a watertight seal. , The anode is arranged close to the T_ 豕 彳 Shihan (CNS) A4 rule (21 × 297) issued on this paper scale. 112 312143 480580 VI. The scope of patent application βHai is above the electric money surface. The cathode electrode, which is energized by the contact of the semiconductor substrate, keeps electricity in a watertight sealed space between the above-mentioned plated surface and the anode. Side plating solution. 43. The semiconductor substrate processing apparatus according to item 42 of the scope of patent application, wherein a plating solution impregnating material made of a water-retaining material is arranged in the space formed between the surface to be plated and the anode, and plating is performed. 44. A semiconductor substrate processing apparatus comprising: a carrying-in and carrying-out section for carrying in and out a semiconductor substrate on which a circuit is formed on a surface; and a metal plating film forming a metal plating film on the semiconductor substrate that has been carried in. A film unit; a polishing unit that grinds at least a portion of the metal plating film formed on the semiconductor substrate; and a transporting mechanism for transferring the semiconductor substrate between the units, and at the same time: the metal plating film forming unit, Pretreatment, electroplating, and water washing can be performed. 45 · A semiconductor substrate processing apparatus, comprising: a carrying-in and carrying-out section for carrying in and out a semiconductor substrate having a circuit formed on a surface thereof in a dry state; and a barrier layer for forming a barrier layer on the semiconductor substrate that has been carried in Film-forming unit; Seed-layer film-forming unit forming a seed layer on the barrier layer; Metal-electric film forming a metal-electric mineral film on the seed layer Film-forming This paper applies Chinese National Standard (CNS) A4 regulations (21〇X 297 public love) 312143 * ^ -------- ^ --------- ^ (Please read the notes on the back before filling this page) 480580 A8 B8 C8 III Please read the notes on the back Φ before filling in this page 'w 丁 480580 A8 B8 C8 D8 $, patent application scope (please read the notes on the back before filling in this page) Between the steps of electroless key processing, set There is a step of making the electroless plating treatment liquid supplied on the surface to be plated of the substrate wet. 48. The method of electroless plating according to item 46 of the scope of patent application, wherein the step of accumulating and maintaining the electroless plating treatment liquid on the plated surface of the substrate at a selected time for electroless electricity treatment is in a state where the substrate is stationary. Carry on. 49. The electroless plating method according to item 46 of the application, wherein the electroplated surface treated with the electroless plating treatment liquid is washed by pouring a washing solution and then spin-dried. 50. An electroless plating method, characterized in that: in an electroless plating method in which an electroplated surface is treated by bringing an electroless plating treatment solution into contact with a plated surface of a substrate, the substrate is heated to a temperature higher than that of the electroless plating. In the state of the processing temperature, the non-electrolytic electricity treatment liquid is used as a liquid on the surface of the substrate of the electric clock and / or the temperature of the surrounding gas for the electroless plating is substantially equal to the temperature of the electroless plating treatment on the substrate. The electroplated surface is made to contact the electroless plating treatment liquid. The Ministry of Economic Affairs ’Intellectual Property Bureau ’s body jade consumption and cooperatives printed 51 · an electroless plating device, which is characterized by: a holding mechanism that keeps the electroplated side up and holds it; a substrate that holds the above-mentioned holding mechanism An electroplating solution holding mechanism that seals around the plated surface; and an electroless plating treatment liquid supply mechanism that supplies an electroless plating treatment liquid to the electroplated surface of the substrate sealed by the above-mentioned liquid electrolyte holding mechanism. 312143 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application for patent scope 52. For example, the scope of patent application for item 51, Qili, electroless plating device, where heating is provided near the above substrate The electroplating device is characterized by having: a holding mechanism for holding the substrate to be plated upward, and holding the substrate; and a mechanism for supplying a plating solution for the helmet on the galvanized surface; The electroless plating treatment liquid supply mechanism is structured so that the upper part of the surface can be used for a sheet metal plating solution. Supply of electroless plating treatment in bulk 54. For example, the electroless plating device of the scope of application for patent No. 53 顼 $ 3, in which a heating mechanism is provided near the soil and the plate. 55 · A substrate processing device, characterized in that: in a substrate processing device having a substrate holding mechanism for holding and holding a substrate, and carrying or processing the substrate in a state where the substrate is held by the above-mentioned holding mechanism, A sensor for detecting the surface state of the substrate is provided on the substrate holding mechanism, and a signal detected by the sensor is used to detect the surface state of the substrate during the handling or processing of the substrate. The above-mentioned sensor is a sensor for film thickness measurement. 57. A substrate processing device characterized by having a substrate holding mechanism for holding the substrate, and using the substrate holding mechanism to fix the substrate in a solid state In the substrate processing equipment that carries or processes the substrate, -------- t ---------- ^ (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 312143 480580 A8S8D8 6. Scope of patent application (please read the precautions on the back before filling this page) When handling or using substrate holding mechanism A sensor for detecting the surface state of the substrate is set at a selected position where the substrate is approaching during processing. When the substrate approaches the sensor, a signal detected by the sensor is used to detect the surface state of the substrate. 58. The substrate processing apparatus of claim 57 in which the above-mentioned sensor can be moved. 59. The substrate processing apparatus of claim 57 in which the above-mentioned sensor is a sensor for film thickness measurement. 60. A substrate processing apparatus characterized by having a substrate holding mechanism for holding a substrate and a substrate processing module for processing a substrate, and configured to carry a substrate held by the substrate holding mechanism into, In a substrate processing device obtained by taking out a substrate processing module, the employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, a consumer cooperative, print clothes to move the substrate of the substrate processing module into the vicinity of the 'exit exit' or the substrate in the substrate processing module is located near the processing position. A sensor for detecting a substrate surface state detects a substrate surface state based on a signal from the sensor when a substrate is carried in or out of the substrate processing module while the substrate is being processed in the substrate processing module. 61. The substrate processing apparatus according to item 60 of the patent application scope, wherein the above-mentioned sensor is a sensor for film thickness measurement. 62. A substrate processing apparatus comprising: carrying out a semiconductor substrate on which a circuit is formed on a surface in a dry state; a carrying-in and carrying-in unit; and a gold plating film formed on the semiconductor substrate that has been carried in. 312143 480580 A8 B8 C8 D8 6. The scope of the patent application is a plating film forming unit; a tempering unit for tempering the above semiconductor substrate; a grinding unit for polishing at least a part of the metal plating film on the semiconductor substrate And a transport mechanism for transporting the semiconductor substrate between the units. ------------- Installation -------- Order --------- line (Please read the precautions on the back before filling this page) Ministry of Economic Affairs Intellectual Property Printed by the Bureau ’s Consumer Cooperatives. This paper is sized for the Chinese National Standard (CNS) A4 (210 X 297 mm) 118 312143