TWI221862B - Apparatus and method for plating a substrate, and method and apparatus for electrolytic treatment - Google Patents
Apparatus and method for plating a substrate, and method and apparatus for electrolytic treatment Download PDFInfo
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五、發明說明(1 ) 【發明之詳細說明】 【發明所屬之技術領域】 \請先閱讀背面之注意事項再填寫本頁) 本發明係關於一種基板之電鍍裝置及電鍍方法,尤其 係關於一種將鋼(Cu)等金屬填充於半導體基板上所形成的 微細配線圖案(凹處)等所用的基板之電鍍方法及電凝裝 置。 而且本發明係關於一種在被處理基板之表面進行電鍍 及餘刻等電解處理的電解處理方法及電解處理裝置。 再者,本發明係關於一種於被處理構件之表面進行電 鍍及蝕刻等之電解處理裝置,尤其係關於一種電解處理裝 置及電解處理裝置之電場狀態控制方法。 【習知技術】 在半導體基板上形成配線電路所用的材料一般係使用 鋁或鋁合金,然而隨著集積度的提升,必須採用傳導率更 南的材料做為配線材料。因此,提案一種於基板進行電錢 處理,並於基板上所形成的配線圖案填充銅或其合金之方 法。 經濟部智慧財產局員工消費合作社印製 這是因為將銅或其合金填充於配線圖案之方法中,習 知有CVD(化學性蒸鍍)及濺鍍等各種方法,然而金屬層之 材質為銅或其合金時,亦即在形成鋼配線時,若使用cVD 法則成本高,而使用濺鍍法又會導致高長寬比(圖案深度之 比係較寬度為大)的情形下,具有無法埋設等的缺點,而以 電鍍之方法最為有效之故。 在此’於半導體基板上進行鋼電鍍之方法中有如杯 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 1 312144 1221862V. Description of the invention (1) [Detailed description of the invention] [Technical field to which the invention belongs] \ Please read the precautions on the back before filling out this page) This invention relates to a plating device and a plating method for a substrate, and more particularly to a Electroplating method and electrocoagulation device for substrates used for fine wiring patterns (recesses) formed by filling metal such as steel (Cu) on a semiconductor substrate. Furthermore, the present invention relates to an electrolytic treatment method and an electrolytic treatment device for performing electrolytic treatment such as electroplating and etching on the surface of a substrate to be processed. Furthermore, the present invention relates to an electrolytic treatment device for performing electroplating and etching on the surface of a member to be treated, and more particularly, to an electrolytic treatment device and a method for controlling an electric field state of the electrolytic treatment device. [Known technology] The materials used to form wiring circuits on semiconductor substrates are generally aluminum or aluminum alloys. However, as the degree of accumulation increases, materials with a lower conductivity must be used as wiring materials. Therefore, a method is proposed in which a substrate is treated with electricity and a wiring pattern formed on the substrate is filled with copper or an alloy thereof. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This is because copper or its alloy is filled in the wiring pattern. Various methods such as CVD (chemical vapor deposition) and sputtering are known. However, the material of the metal layer is copper. When using it or its alloy, that is, when forming steel wiring, if the cVD method is used, the cost is high, and the sputtering method will lead to a high aspect ratio (the pattern depth ratio is larger than the width). Disadvantages, and electroplating is the most effective reason. Here ’s a method for steel plating on a semiconductor substrate, such as a cup. This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) 1 312144 1221862
五、發明說明(2 ) 經濟部智慧財產局員工消費合作社印製 或浸潰式之於槽内經常裝滿電鍍液,並將基板浸泡於該電 鍍液之方法、僅於電鍍槽内有基板時才裝滿電鍍液之方 法、施以電位差而進行所謂的電解電鍍之方法、以及進行 不施以電位差之非電解電鍍之方法等各種方法。 過去’進行這種銅電鍍之電鍍裝置中,除了進行電鑛 步驟的單元之外,還設有配置成水平狀態之進行電鍍所附 帶之前處理步驟的單元、進行電鍍後之清洗•乾燥步驟的 單元等多數單元、以及在上述各單元間進行基板之搬運的 搬運機器人。而且基板係一面被搬運於上述各單元間,一 面在各單元被進行預定之處理,並依序被移至電鍍處理後 的次步驟。 然而,習知之電鍍裝置係在每一電鍍處理及前處理之 各步驟設有各自的單元,並將基板搬運至各單元以進行處 理,因此整個裝置不僅非常複雜,控制不易,還具有佔去 大片面積,且製造成本非常昂貴之問題。 而在進行電解電鍍時,若充滿於基板(陰極)之被電鍍 面與陽極間的電鍍液中有氣泡存在,則本身為絕緣體之氣 泡會具有類似陽極遮罩的功能,而有對應於該部分之位置 所形成的電鍍膜厚變薄,或產生完全的電鍍缺口之情形發 生。因此為了獲得均一且良質的電鑛覆膜,必須使基板之 被電鍍面與陽極之間的電鍍液沒有殘留氣泡。 再者,電解處理,尤其是電解電鍍係廣為利用之金屬 膜形成方法。近年來,例如銅之多層配線用電解銅電鑛、 凸塊(bump)形成用電解金電鑛等的有效性(低成本、填孔特 -------------------訂--------- \請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 2 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(3 性等)不僅受到半導體產業等的注目而且也為半導體產業 等所利用。 第71圖係採用所謂面朝下方式而在半導體晶圓等被 處理基板(以下稱為基板)表面進行電解電鍍之電鍍裝置的 習知之一般構成。該電鍍裝置具有朝上方開口,且内部可 保持電鍍液600之圓筒狀電鍍槽602、以及使基板向下並 保持成可自由裝卸’且使該基板W配置於封閉電鑛槽602 上端開口部之位置的基板保持部604。於電鑛槽6Q2内部 則水平配置有浸泡在電鍍液600令,且作為陽極之平板狀 陽極板606。另一方面,於基板下面(電鍍面)形成有導 電層S,該導電層S於其周緣部具有與陰極之接點。 於前述電鑛槽602之底部中央,連接有用以形成向上 之電鍍液喷流的電鍍液喷射管608,於電鍍槽6〇2之上部 外側則配置有電鍍液收容部61 〇。 藉此,以基板保持部604使基板W向下而保持並配至 於電鑛槽602上部’並使電鑛液600從電鑛槽602底部朝 上方喷出’以使電鑛液600之喷流接觸於基板w之下面(電 鍍面),同時從電鍍電源612施加預定電壓於陽極板606(陽 極)與基板之導電層S(陰極)之間,以於基板w下面形成電 鑛膜。此時,溢出電鍍槽602之電鍍液600係由電鍍液收 容部610回收。 此時,LSI(大型積體)用之晶圓或液晶基板有越來越朝 大面積發展的趨勢,隨之便會產生形成於基板表面之電鍍 膜之膜厚參差不齊的問題。換言之,為了於基板提供陰極 ---------------I----^----I---- ,(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 3 312144 1221862V. Description of the invention (2) The method of printing or immersing the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in the tank is often filled with a plating solution and the substrate is immersed in the plating solution. There are various methods such as a method of filling a plating solution, a method of performing so-called electrolytic plating by applying a potential difference, and a method of performing non-electrolytic plating without applying a potential difference. In the past, in addition to the unit for performing the electro-mineralization step in the electroplating apparatus for performing such copper plating, a unit for performing the pre-processing step attached to the plating in a horizontal state and a unit for performing the washing and drying steps after the plating were provided. There are many units, and a transfer robot that transfers substrates between the units. In addition, while the substrates are being transported between the above-mentioned units, predetermined processing is performed in each unit, and they are sequentially moved to the next step after the plating process. However, the conventional electroplating device is provided with a separate unit at each step of the electroplating process and the pretreatment, and the substrate is transferred to each unit for processing. Therefore, the entire device is not only very complicated, difficult to control, but also takes up a large area. Area, and the manufacturing cost is very expensive. In the electrolytic plating, if there are bubbles in the plating solution filled between the plated surface of the substrate (cathode) and the anode, the bubbles that are themselves insulators have a function similar to the anode mask, and there is a corresponding part The thickness of the plating film formed at the position becomes thin or a complete plating notch occurs. Therefore, in order to obtain a uniform and high-quality galvanic coating, it is necessary to make the plating solution between the plated surface of the substrate and the anode free of air bubbles. Furthermore, electrolytic treatment, especially electrolytic plating is a widely used method for forming a metal film. In recent years, for example, the effectiveness of copper electrolytic copper ore for multilayer wiring, electrolytic gold ore for bump formation (low cost, hole filling characteristics --------------) ----- Order --------- \ Please read the notes on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 2 312144 1221862 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of Inventions (Third, etc.) Not only attracted the attention of the semiconductor industry but also used by the semiconductor industry. Fig. 71 is a conventional general configuration of an electroplating apparatus that uses a so-called face-down method to perform electrolytic plating on a surface of a substrate to be processed (hereinafter referred to as a substrate) such as a semiconductor wafer. This electroplating device has a cylindrical electroplating tank 602 that is open upward and can hold the plating solution 600 inside, and the substrate can be held down and held freely, and the substrate W is arranged in the upper opening of the closed electric ore tank 602.位置 的 sonarily holding substrate 604. Inside the electric ore tank 6Q2, a flat plate-shaped anode plate 606 immersed in a plating solution of 600 Å and used as an anode is arranged horizontally. On the other hand, a conductive layer S is formed on the lower surface (plated surface) of the substrate, and the conductive layer S has a contact point with the cathode at its peripheral edge portion. A plating solution spraying pipe 608 for forming an upward plating solution spray is connected to the center of the bottom of the electric ore tank 602, and a plating solution storage section 61 is arranged outside the upper part of the plating tank 602. Thereby, the substrate holding portion 604 holds the substrate W downward and distributes it to the upper part of the electric ore tank 602 'and causes the electric ore liquid 600 to be ejected upward from the bottom of the electric ore tank 602' so that the electric ore liquid 600 is sprayed. It is in contact with the lower surface (plating surface) of the substrate w, and at the same time, a predetermined voltage is applied from the plating power source 612 between the anode plate 606 (anode) and the conductive layer S (cathode) of the substrate, so as to form an electric deposit film under the substrate w. At this time, the plating solution 600 overflowing the plating tank 602 is recovered by the plating solution container 610. At this time, wafers or liquid crystal substrates for LSIs (large-scale integrated circuits) tend to develop more and more in a large area, and the thickness of the plating film formed on the substrate surface is uneven. In other words, in order to provide the cathode on the substrate --------------- I ---- ^ ---- I ----, (Please read the precautions on the back before filling this page ) This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) 3 312144 1221862
五、發明說明(4 ) 經濟部智慧財產局員工消費合作社印製 電位,而在事先形成於基板的導電層之周緣部設置與電極 之接點,但基板的面積變大時,從基板周邊的接點至基板 中央之導電層的電阻會變大,且在基板面内會產生電位 差,而使電鍍速度有所不同,以致產生電鍍臈的膜厚之參 差不齊。 亦即’於被處理基板表面進行電解電錢係於被處理基 板(以下單稱「基板」)表面形成導電層,並使用以給予陰 極電位之接點接觸於基板W之外周附近之導電層上,另一 方面於面向基板W之位置設置陽極,使電鍍液充滿於陽極 與基板W間,再由直流電源使電流流通於前述陽極與接點 間’以於基板W之導電層上進行電鍍。然而,若為大面積 之基板,從基板外周附近之接點至基板W中樣之導電層的 電阻會變大,在基板W面内會產生電位差,進而導致各部 之電鍍速度有所不同。 亦即,第72圖係於直徑200mm之矽基板上形成30nm、 80nm及150nm膜厚的導電層(銅薄膜),並使用第71圖所 示之習知一般的電鍍裝置進行電解銅電鍍時之基板面内中 的銅電鍍膜之膜厚分布圖。第73圖係於直徑為100mm、 200 mm及300 mm之梦基板上形成膜厚1〇〇 nm之導電層(鋼薄 膜),並且與前述同樣進行電解銅電鍍時之基板面内中的鋼 電鍍膜之膜厚分布圖。從第72圖及第73圖可知,導電層 較薄的情況及基板直徑較大的情況下,由電解電鍍形成的 銅電鍍膜的膜厚分布之參差不齊變得較大,嚴重時將完全 無法在基板中央附近形成鋼膜。 -n I ϋ n a^i ϋ ϋ ϋ > ϋ ϋ ϋ ϋ ϋ I I^-το- ϋ ϋ .^1 ϋ ^1 ·ϋ ϋ I _(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 4 312144 1221862 A7V. Description of the invention (4) The potential of the Intellectual Property Bureau employee ministry of the Ministry of Economic Affairs prints the potential, and the contact point with the electrode is set on the peripheral portion of the conductive layer formed in advance on the substrate, but when the area of the substrate becomes larger, The resistance of the conductive layer from the contact to the center of the substrate will increase, and a potential difference will be generated in the substrate surface, which will cause the plating speed to be different, so that the thickness of the plated rhenium varies. That is, 'electrolytic electricity is formed on the surface of the substrate to be processed is to form a conductive layer on the surface of the substrate to be processed (hereinafter simply referred to as the "substrate"), and use a contact to give a cathode potential to the conductive layer near the outer periphery of the substrate W On the other hand, an anode is provided at a position facing the substrate W, so that the plating solution is filled between the anode and the substrate W, and then a direct current power source is used to flow a current between the anode and the contacts to perform plating on the conductive layer of the substrate W. However, for a large-area substrate, the resistance from a contact near the periphery of the substrate to the conductive layer in the substrate W will increase, causing a potential difference in the surface of the substrate W, which will cause the plating speed of each part to be different. That is, Fig. 72 shows a case where a conductive layer (copper film) having a thickness of 30 nm, 80 nm, and 150 nm is formed on a silicon substrate having a diameter of 200 mm, and electrolytic copper plating is performed using a conventional general plating device shown in Fig. 71. Film thickness distribution diagram of the copper plating film in the substrate surface. Fig. 73 shows the formation of a conductive layer (steel film) with a film thickness of 100 nm on a dream substrate having a diameter of 100 mm, 200 mm, and 300 mm, and the same is applied to the steel substrate in the surface of the substrate when electrolytic copper plating is performed in the same manner as described above. Film thickness distribution of the coating. As can be seen from Figures 72 and 73, when the conductive layer is thin and the substrate diameter is large, the unevenness of the film thickness distribution of the copper plating film formed by electrolytic plating becomes larger, and it will be completely severe. A steel film cannot be formed near the center of the substrate. -n I ϋ na ^ i ϋ ϋ ϋ > ϋ ϋ ϋ ϋ ϋ II ^ -το- ϋ ϋ. ^ 1 ϋ ^ 1 · ϋ ϋ I _ (Please read the notes on the back before filling this page) This paper Dimensions are applicable to China National Standard (CNS) A4 (210 X 297 mm) 4 312144 1221862 A7
1221862 B7 五、發明說明(6 ) 避免這些問題的方法中, 導電率。但是基板在電鍍以外之製::::之:度或縮小 制,而且例如以賤鍍法於’也受到各種限 报容易在圖案内部發生空形成厚的導電層時, 之厚度,或改變導電層之L類無法容易地加厚導電層 此外,將陰極電位導入用接點 可縮小基板面内的電位差, '基板之—面,則 f 實上無法用來作為LS卜再者j氣接點之部位在現 m 有&间電鍍液之電阻值 圖中的電阻R3、R2或R4)也报有效 (第 觫皙# β浒燃私士扯lL 仁疋改變電鍍液之電 所有特性’例如若降低要進行電鍍 子濃度’㈣有無法充分提高電鍍速度等的限制。 如上所述1基板周邊部設置接點,並使用基板表面 之導電層以進行電解電鑛之處理中,會產生若加大基板之 大小’電鑛膜厚在基板面内會大大地不同之問題且對於 在被處理基板面内之膜厚及過程之均一化非常重要的半導 體工業來說’該問題尤其成為很大的限制。 【發明之要旨】 經濟部智慧財產局員工消費合作社印製 本發明係有蓉於上述問題而研創者,其目的在於提供 一種可利用單一的裝置進行電鍍處理及其附屬處理之電鍍 裝置及電鍍方法,又提供一種使氣泡不殘留在填滿於基板 之被電鍍面與陽極間的電鍍液中之基板之電鍍裝置及電鍍 方法。 而且’本發明之目的在於提供一種不須改變導電層之 厚度及膜種、電錢液之電解質等,而可進行基板面内之均 312144 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 12218621221862 B7 V. Description of the invention (6) In the method of avoiding these problems, the electrical conductivity. However, the substrate is not made by electroplating: ::::: degree or reduced, and for example, the base plating method is also subject to various restrictions. When the thickness of the pattern is prone to form a thick conductive layer within the pattern, the thickness or the conductivity is changed The L type of the layer cannot easily thicken the conductive layer. In addition, the potential difference in the surface of the substrate can be reduced by introducing the cathode potential introduction contact. 'On the substrate-surface, f cannot be used as an LS or j gas contact. The resistance of the part in the current resistance solution of the plating solution R3, R2, or R4) is also reported to be valid (# 觫 浒 # 浒 私 扯 扯 L L L L L 疋 疋 疋 疋 疋 疋 所有 to change all characteristics of the electroplating bath's electricity If the concentration of electroplating is to be lowered, there is a limitation that the plating speed cannot be sufficiently increased. As described above, a contact is provided around the substrate and a conductive layer on the surface of the substrate is used for electrolytic power ore processing. The size of large substrates 'The problem that the thickness of the electric ore film varies greatly within the substrate surface and is particularly important for the semiconductor industry where the film thickness and process uniformity within the substrate surface to be processed are very important' [Gist of the invention] Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economics. This invention was developed by the above-mentioned problems. Its purpose is to provide a plating device that can use a single device for electroplating and its auxiliary processing. The electroplating method also provides a plating device and a plating method for preventing the bubbles from remaining in the plating liquid filled between the plated surface of the substrate and the anode. Also, the object of the present invention is to provide a method that does not need to change the conductive layer. Thickness, film type, electrolyte of electrolyte, etc., and can be averaged in the surface of the substrate 312144 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1221862
五、發明說明(7) 一電解處理的電解處理裝置及其方法。 (請先閱讀背面之注意事項再填寫本頁) 再者’本發明之目的在於提供一種藉由積極地控制電 場狀態’而可控制作為目標之膜厚的面内分布狀態之電解 處理裝置及其電場狀態控制方法。 本發明申請專利範圍第1項係以具有:使被電鍍面朝 向上方而保持基板的基板保持部;與該基板接觸而使其通 電之陰極;配置於該基板之被電鍍面上方之陽極;於前述 基板保持部所保持之基板的被電鍍面與接近該被電鍍面之 前述陽極間的空間注入電鍍液之電鍍液注入機構為其特徵 的基板之電鍍裝置。 藉此’在以基板保持部使基板向上保持的狀態下,於 被電鑛面與電極臂部之陽極間填滿電鍍液以進行電鍍處 理’並於電鍍處理後,排出被電鍍面與電極臂部之陽極間 的電鍍液,同時使電極臂部上升而開放被電鍍面,即可在 以基板保持部保持基板的狀態下,於電鑛處理之前後進行 附屬於電鑛之前處理及清洗•乾燥處理等其他處理。 經濟部智慧財產局員工消費合作社印製 本發明申請專利範圍第2項係如申請專利範圍第i項 之基板之電鍍裝置,其中,於前述電極臂部之前述陽極下 面密接保持著由保水性材料構成的電鑛液浸潰材。在進行 鋼電鍍時,為了抑制殘渣(slime)的產生,一般係於陽極使 用含有含量為0.03至0.05%之碟的鋼(含構銅),如上述於 陽極使用含磷銅時,隨著電鍍的進行,於陽極的表面會形 成所謂「Black Fi lm」的黑膜。在這種情況下,於電鍵液 浸潰材含有電鑛液’以濕潤陽極的表面,可防止黑膜掉落 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 7 312144 A7V. Description of the invention (7) An electrolytic treatment device and method for electrolytic treatment. (Please read the precautions on the back before filling in this page.) Furthermore, the object of the present invention is to provide an electrolytic treatment device capable of controlling the in-plane distribution state of the target film thickness by actively controlling the state of the electric field. Electric field state control method. The first item of the patent application scope of the present invention is to have: a substrate holding portion that holds the substrate with the to-be-plated surface facing upward; a cathode that is in contact with the substrate and energizes it; an anode disposed above the to-be-plated surface of the substrate; The plating solution injection mechanism for injecting a plating solution into a space between the plated surface of the substrate held by the substrate holding portion and the anode near the plated surface is a plating device for the substrate. Thereby, in a state in which the substrate is held upward by the substrate holding portion, a plating solution is filled between the electro-mineral surface and the anode of the electrode arm portion to perform the plating process, and the plated surface and the electrode arm are discharged after the plating process. The electroplating solution between the anodes and the electrode arms are raised at the same time to open the surface to be plated. With the substrate held by the substrate holding portion, the pre-attachment treatment and cleaning and drying can be performed before and after the electro-mine treatment. Processing and other processing. The consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the second scope of the patent application of the present invention, which is a plating device for a substrate such as the first scope of the patent application, in which a water-retaining material is tightly kept under the anode of the aforementioned electrode arm. The composition of the electric mineral liquid impregnated material. In order to suppress the generation of slime during steel electroplating, it is generally used on the anode to use steel (containing copper) with a content of 0.03 to 0.05%. When using phosphorous copper on the anode as described above, As a result, a so-called "Black Film" black film is formed on the surface of the anode. In this case, the electrolyte solution immersed in the key liquid contains the electric mineral liquid to wet the surface of the anode, which can prevent the black film from falling. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 7 312144 A7
1221862 五、發明說明(8 ) 至基板之電鍍面,同時在基板之電 <冤鍍面與陽極間注入電鍍 液時,可容易地將空氣排出至外部 本發明申請專利範圍第3項係 明專利範圍第1項 之基板之電鍍裝置’其中’具有陰極部且於該陰極部側 方配置有電鍍液托盤,而前述電極臂部可在前述陰極部與 電鑛液托盤之間自由移動。因此’於未進行電鑛處理時, 事先使陽極浸潰於電鑛液托盤内之電錢液中而加以濕潤, 可防止形成在陽極表面之黑膜乾燥或氧化。 本發明申清專利範圍第4項係如申請專利範圍第1項 之基板之電鍍裝置,其中,具有陰極部,於該陰極部側方 則配置有複數個喷嘴,該複數個喷嘴係朝向前述基板保持 部所保持的基板之被電鍍面,而喷射前處理液及清洗液、 氣體等。因此,在以基板保持部保持電鍍處理前後的基板, 並使被電鍍面朝向上方開放之狀態下’從喷嘴向被電鍍面 喷射前處理液及清洗液,即可進行前處理及清洗處理。 本發明申請專利範圍第5項係如申請專利範圍第1項 之基板之電鍍裝置,其中,具有陰極部,而前述基板保持 部可在下方之基板授受位置、上方之前述基板之被電鍍面 周緣部抵接於前述陰極部之電鍍位置、以及兩者間的前處 理•清洗位置之間自由升降。如上所述,使基板保持部對 應於各動作位置而升降,可達成裝置之進一步小型化及操 作性的提昇。 本發明申請專利範圍第6項係以將朝向上方且與陰極 導通之基板之被電鍍面周緣部以不透水狀態密封,且使陽 --------1--------- ·(請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 8 312144 1221862 A7 五、發明說明(9 極接近該被電鍍面上方而配置,再將電鍍液注入被電鍍面 與陽極間被密封成不透水狀態的空間為其特徵之基板之電 鍍方法。 本發明申請專利範圍第7項係以進行申請專利範圍第 6項之電鍍後,由電鍍液回收喷嘴回收電鍍之殘留液體為 其特徵之基板之電鍍方法。 本發明申請專利範圍第8項係以於申請專利範圍第611 項之電鍍方法中,在進行電鍍前,將預塗·回收臂移動至 與基板對峙之位置,並且由預塗喷嘴供給預塗液,以進行 預塗處理為其特徵之基板之電鍍方法。 本發明申請專利範圍第9項係如申請專利範圍第6項 之基板之電鍍方法,其中,於前述被電鍍面與陽極之間的 空間配置保水性材料構成❺電鑛液浸潰料,並使該構 含有電鍍液。 本發明申請專利範圍第10項係以由基板保持部保持 基板’且具有配置於該基板之被電鑛面上方之陽極以及 與該基板接觸而使其通電之陰極’並於前述被電鍍面與陽 極之間的空間配置保水性材料構成的電鍛液浸潰構件以 進行電鑛為其特徵之基板之電鑛裝置。 本發明申請專利範圍第u項係如申請專利範圍第1〇 ==之電鍍裝置,其中’前述電鍍液浸溃構件係高電 本發明申請專利範圍第12項係如申請專利範圍第1〇 項之基板之電鑛裝置,其中,益、4·、泰μ , 1其中前述電鍍液浸潰構件係由陶 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮) y 312144 A71221862 V. Description of the invention (8) To the plating surface of the substrate, and when the plating solution is injected between the substrate < the plating surface and the anode, the air can be easily exhausted to the outside. The plating device for substrates in the first item of the patent includes 'wherein' there is a cathode portion and a plating liquid tray is arranged on the side of the cathode portion, and the electrode arm portion can move freely between the cathode portion and the electro-mineral liquid tray. Therefore, when the electric ore treatment is not performed, the anode is immersed in the electric money liquid in the electric ore liquid tray and moistened in advance, which can prevent the black film formed on the anode surface from drying or oxidizing. The fourth item of the patent claim of the present invention is the electroplating device for a substrate as described in the first item of the patent application, which has a cathode portion, and a plurality of nozzles are arranged on the side of the cathode portion, and the plurality of nozzles are directed to the substrate. The plated surface of the substrate held by the holding portion sprays a pre-treatment liquid, a cleaning liquid, and a gas. Therefore, in the state where the substrate holding portion holds the substrate before and after the plating process and the surface to be plated is opened upward, the pretreatment liquid and the cleaning liquid are sprayed from the nozzle to the surface to be plated, so that the pretreatment and cleaning treatment can be performed. Item 5 of the scope of patent application of the present invention is a plating device for a substrate as described in item 1 of the scope of patent application, which has a cathode portion, and the substrate holding portion can be at the substrate receiving and receiving position below, and the periphery of the plated surface of the substrate above. The part abuts on the above-mentioned cathode part plating position, and the pre-treatment and cleaning positions therebetween are freely raised and lowered. As described above, the substrate holding portion can be raised and lowered corresponding to each operation position, thereby achieving further miniaturization of the device and improvement in operability. The sixth item in the scope of patent application of the present invention is to seal the peripheral edge portion of the plated surface of the substrate facing upward and conducting with the cathode in a water-tight state, and make the yang -------- 1 ------- -· (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economy ’s Consumer Cooperatives This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297 mm) 8 312144 1221862 A7 5 (Explanation of the invention (9 poles are arranged close to the surface to be plated, and then a plating solution is injected into the substrate between the plated surface and the anode, which is sealed in a water-tight state as a feature of the substrate. Plating method of the present invention is the seventh The item is a method for electroplating a substrate characterized by recovering the residual liquid of electroplating from a plating solution recovery nozzle after performing the electroplating of the patent application scope item 6. The patent application scope item 8 of the present invention is based on the patent application scope item 611 In the electroplating method, before performing electroplating, the precoating / recovering arm is moved to a position facing the substrate, and the precoating liquid is supplied from the precoating nozzle to perform the precoating process. Item 9 of the scope of patent application of the present invention is the plating method for a substrate as described in item 6 of the scope of patent application, wherein a water-retentive material is arranged in the space between the aforementioned plated surface and the anode to form a dysprosium liquid immersion material, and This structure contains a plating solution. The tenth item in the scope of patent application of the present invention is to hold the substrate 'by the substrate holding portion, and have an anode disposed above the substrate to be galvanized, and a cathode contacting the substrate to energize it' and The space between the electroplated surface and the anode is configured with an electro-forging fluid impregnating member composed of a water-retaining material to perform electro-mineralization as a substrate for the electro-mineralizing device. The item u of the scope of patent application for the present invention is the first 1〇 == electroplating device, wherein the aforementioned electroplating solution impregnated member is a high-density electric power mining device of the present invention in the scope of application of the patent application No. 12 is a substrate of the application scope of the patent application No. 10, among which, Yi, 4 ·, Thai μ, 1 of which the aforementioned electroplating solution impregnated members are made of ceramic paper and are in accordance with Chinese National Standard (CNS) A4 specifications (210 X 297) 312144 A7
1221862 五、發明說明(10 ) 瓷構成。 本發明申请專利範圍第13項係以前述電鍍液浸潰構 件係在不接觸於基板之被電鍍面的狀態下,且在電鍍液填 滿前述電鍍液浸潰構件與前述基板之被電鍍面間之間隙的 狀態下進行電鍍為其特徵之基板之電鑛裝置。 本發明申請專利範圍第14項係以在由基板保持部保 持基板的狀態下,使電鍍處理、清洗•乾燥處理對應於各 動作位置而升降,藉此以單一的裝置進行處理為其特徵之 基板之電鍍裝置。 本發明申請專利範圍第15項係如申請專利範圍第14 項之基板之電鍍裝置,其中,前述基板之電鍍裝置具有配 置於前述基板之被電鍍面上方的陽極、以及與前述基板接 觸並使其通電之陰極,並於前述被電鑛面與前述陽極之間 的空間配置保水性材料構成的電鍍液浸潰構件。 本發明申請專利範圍第16項係以利用運送機器人從 收納基板之裝卸部取出基板而運送至電鍍單元内部,並以 刖述單元内之基板保持部保持基板,且在以前述基板保持 部保持基板之狀態下,使電鍍處理、清洗•乾燥處理對應 於各動作而升降,藉此以單一的裝置進行處理。 本發明申請專利範圍第17項係以由收納基板之裝卸 部、以單一之裝置進行電鍍處理及其附屬處理的電鑛單 元、以及在裝卸部與電鍍單元之間進行基板之授受的運送 機器人所構成為其特徵之基板之電鍍裝置。 本發明申凊專利範圍第18項係以基板保持部保持基 --------------------訂--------- 請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 10 312144 經濟部智慧財產局員工消費合作社印製 1221862 A7 ---------2Z_________ 五、發明說明(11) 板’且具有配置於該基板之被電鍍面上方之陽極、與該爲 板接觸而使其通電之陰極、以及純水供給用喷嘴之基板之 電錢裝置,其特徵為:在電鍵結束後,藉由從該嘴嘴供终 純水’以同時清洗前述基板與前述陰極。 本發明申請專利範圍第1 9項係以具有·· 基板保持部,用以保持基板; 陰極’與該基板保持部所保持之基板接觸而使其 電; ' 陽極’接近前述基板而配置; 電鍍液注入機構,將電鍍液注入前述基板保持部所保 持的基板之被電鍍面與接近該被電鍍面之陽極間的空間, 而前述電鍍液注入機構係從配置在前述陽極之一部分 或陽極外周部的電鍍液注入路徑,於陽極與基板之被電贫 面之間注入電鍍液,以擴散於基板之被電鍍面而構成為其 特徵之基板之電鍍裝置。 本發明申請專利範圍第20項係如申請專利範圍第j 9 項之基板之電鍍裝置,其中,具有: 基板保持部’使被電鍍面朝向上方而保持基板; 陰極部,具有用以保持該基板保持部所保持的基板之被 電鍍面的被電鍍液之密封材、與該基板接觸而使其通電之 陰極; 電極臂部,具有靠近該陰極部而可朝水平垂直方向自由 直線移動之陽極; 電錢液注入機構,將電鍍液注入前述基板保持部所保持 --------------------訂-------— ~請先閱讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 11 312144 221221862 V. Description of invention (10) Porcelain composition. Item 13 of the scope of patent application of the present invention is that the aforementioned plating solution impregnated member is in a state that does not contact the plated surface of the substrate, and the plating solution fills between the plating solution impregnated member and the plated surface of the substrate. An electric mining device that performs electroplating on a substrate with its characteristics in a gap state. Item 14 of the scope of patent application for the present invention is to raise and lower the plating process, cleaning, and drying process according to each operating position while the substrate is held by the substrate holding unit, thereby processing the substrate characterized by a single device. Electroplating device. Item 15 of the scope of patent application of the present invention is a plating device for a substrate as described in item 14 of the scope of patent application, wherein the plating device for the aforementioned substrate has an anode disposed above a plated surface of the aforementioned substrate, and an anode contacting the aforementioned substrate and making it The current-carrying cathode is provided with a plating solution impregnating member made of a water-retaining material in a space between the to-be-ore surface and the anode. Item 16 of the scope of patent application of the present invention is to use a transport robot to take out a substrate from a loading and unloading section of a storage substrate and transport it to the inside of a plating unit. The substrate is held by a substrate holding portion in the unit, and the substrate is held by the substrate holding portion. In this state, the plating process, the cleaning, and the drying process are performed in a single device by raising and lowering in accordance with each operation. Item 17 of the scope of patent application for the present invention is a robotic unit that accepts and receives a substrate by a loading and unloading unit for storing substrates, a single device for electroplating and its auxiliary processing, and a transfer robot that transfers and receives substrates between the loading and unloading unit and the plating unit. It is a plating device for a substrate which is characterized by it. Item 18 of the scope of patent application of the present invention is to hold the substrate by the substrate holding portion. -------------------- Order --------- Please read the back first Please note this page, please fill out this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with the Chinese National Standard (CNS) A4 (210 X 297 public love) A7 --------- 2Z_________ V. Description of the invention (11) The plate is provided with an anode disposed above the plated surface of the substrate, a cathode that is in contact with the plate and is energized, and pure water supply The electric money device using a substrate of a nozzle is characterized in that after the electric key is completed, the substrate and the cathode are simultaneously cleaned by supplying final pure water from the nozzle. Item 19 of the scope of patent application for the present invention is provided with a substrate holding portion for holding the substrate; the cathode 'is in contact with the substrate held by the substrate holding portion to be electrically charged; the' anode 'is arranged close to the aforementioned substrate; electroplating The liquid injection mechanism injects a plating solution into a space between a plated surface of the substrate held by the substrate holding portion and an anode close to the plated surface, and the plating solution injection mechanism is arranged from a portion of the anode or an outer periphery of the anode. In the plating solution injection path, the plating solution is injected between the anode and the electrically depleted surface of the substrate to diffuse on the plated surface of the substrate to constitute a plating device of the substrate. Item 20 of the scope of patent application of the present invention is the electroplating device for a substrate as described in item 9 of the scope of patent application, which includes: a substrate holding portion that holds the substrate to be plated upward, and a cathode portion having a substrate for holding the substrate. The sealing material of the plating solution on the plated surface of the substrate held by the substrate holding portion, and the cathode contacting the substrate to energize it; the electrode arm portion has an anode that is close to the cathode portion and can move freely and linearly in the horizontal and vertical directions. ; Electric money liquid injection mechanism, which injects the plating solution into the substrate holding section, which is held by the above-mentioned ------------ Order Note on the back, please fill out this page again} This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 11 312144 22
五、發明說明(12) 的基板之被電鍍面與接近該被電鍍面之陽極間的空間, 而前述電鍍液注入機構係從設在前述陽極之一部分的貫 穿電鍍液注入孔或配置於陽極外周部之噴嘴,於陽極與基 板之被電鍍面之間注入電鍍液,以擴散於基板之被電鍍面 而構成為其特徵之基板之電鍍裝置。 因此,在以基板保持部使基板向上而保持的狀態下, 將電鍍液填滿於被電鍍面與電極臂部之陽極之間以進行電 鍍處理,並於電鍍處理後,排出被電鍍面與電極臂部之陽 極之間的電鍍液,同時使電極臂部上升,以使被電鍍面開 放’可在以基板保持部保持基板之狀態下,於電鍍處理前 後進行電鑛所附屬的前處理及清洗•乾燥處理等其他處 理。而且,將電鍍液注入基板之被電鍍面與陽極之間時, 會產生擴散至基板之整個被電鍍面的電鑛液之液流,而基 板之被電錢面與陽極間的空氣會隨著該電鑛液之液流被推 出至外側,並且可防止空氣隨著電鍍液混入的情形,因而 可防止氣泡殘留在填滿在基板之被電鍍面與陽極間的電鑛 液中。 本發明申請專利範圍第21項係如申請專利範圍第2〇 項之基板之電鍍裝置,其中,前述電鑛液注入機構係在陽 極之基板對向面的反面,沿著該陽極之直徑方向而配置, 且具有連接於電鍍液供給管之電鍍液導入路徑,而在設於 該電鍍液導入路徑之陽極側之面的電鍍液導入孔所相對向 的位置設有前述電鍍液注入孔。因此,隨著在基板之被電 鍍面與陽極間注入電鍍液,會朝向與電鍍液導入管直交的 --------^--------- ·(請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 12 312144 1221862 五、發明說明(13 ) 方向產生電鍍液流。 請 先 閱 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 本發明申請專利範圍第22項係如申請專利範圍第19 項之基板之電鍍裝置,其中’前述電鑛液注入機構係呈十 字狀、放射狀或圓周狀地配置於陽極之基板對向面的反 面,且具有連接於電鍍液供給管之電鍍液導入路徑,而在 叹於該電鍍液導入路徑之陽極側之面的電鍍液導入孔所相 對向的位置設有前述電鍍液注入孔。#此,隨著將電鍛液 /主入基板之被電鍍面與陽極間,會產生以放射狀擴散於電 鑛液導入管所劃分的各象限内之電鑛液流。 本發明申請專利範圍第23項係使陽極接近陰極通電 的基板之被電鍍面至少一部分而配置,並於被電鍍面與陽 極間注入電鍍液時,形成用以交聯基板之被電鍍面與陽極 之間的電鍍液柱’並以該電鍍液柱為起點注入電鍍液之基 板之電鍍方法。 經濟部智慧財產局員工消費合作社印製 本發明申請專利範圍第24項係如申請專利範圍第23 項之基板之電鍍方法,其中,從配置於前述陽極之一部分 或陽極外周部之電鍍液注入路徑,將電鍍液注入基板之被 電鍍面與陽極之間。 本發明申請專利範圍第25項係使陽極接近陰極通電 的基板之被電鍍面至少一部分而配置,並於被電鍍面與陽 極間的空間注入電鍍液時,使電鍍液擴散於基板之被電鍍 面,並且使基板與陽極相對地旋轉而逐漸接近為其特徵之 基板之電鍍方法。藉此,可使基板與陽極間的氣泡隨著兩 者相互接近,逐漸朝外側移動而棑出。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 13 312144 1221862 A7 五、發明說明(14 ) 本發明申請專利範圍第2 6項係如申請專利範圍第2 5 項之基板之電鍍方法,其中,於前述陽極之基板對向面配 置由具有保水性之多孔體構成的電鍍液浸潰材,於該電鍍 液浸潰材之基板對向面則設有藉由該電鍍液浸潰材與基板 之相對旋轉,以使其間之電鍍液呈放射狀向外側擴散之機 構。藉此,可使基板與陽極間的氣泡幾乎完全排出。 本發明申請專利範圍第27項係以在具有與陽極及陰|| 極之一方電極的接點之被處理基板,與對峙於該被處理基 板之另方電極間所填滿的至少一部分電解液,設置電傳 導率比該電解液小的高電阻結構體,以進行被處理基板表 面之電解處理為其特徵之電解處理方法。 藉此,可透過高電阻結構體使浸潰於電解液中的陽極| y 與陰極間的電阻,較只有電解液的情形為高,而可縮小被| i 處理基板表面之電阻所導致的電流密度之面内差。此時使 被處理基板接觸於陰極之接點可進行電解電鍍,使被處理 基板接觸於陽極之接點可進行電解蝕刻。 經濟部智慧財產局員工消費合作社印製 本發明申請專利範圍第28項係如申請專利範圍第27 項之電解處理方法,其中,前述高電阻結構體係使其等效 電路中的電阻,較形成於被處理基板表面之導電層之與前 述電極之接點,與電性上距離該接點最遠的部分之間的等 效電路中的電阻為高。藉此,可更加縮小被處理基板上所 形成的導電層之電阻所導致的電流密度之面内差。 本發明申請專利範圍第29項係以在由基板保持部保 持基板向上的狀態下,進行申請專利範圍第2?項之電解處 312144 1221862 A7 B7 五、發明說明(15) 理為其特徵之電解處理方法。 _(請先閱讀背面之注音?事項再填寫本頁) 本發明申請專利範圍第30項係在具有與陽極及陰極 之一方電極的接點之被處理基板,與對峙於該被處理基板 之另一方電極間填滿電解液,以進行被處理基板之電解處 理的電解處理裝置,其特徵為··於前述電解液之至少一部 分設置電傳導率比該電解液小的高電阻結構體。 本發明申請專利範圍第31項係如申請專利範圍第3〇 項之電解處理裝置,其中,具有在以基板保持部保持基板 向上的狀態下,進行電解處理之基板保持部。 本發明申請專利範圍第32項係如申請專利範圍第3〇 項之電解處理裝置,其中,前述高電阻結構體係使其等效 電路中的電阻,較形成於被處理基板表面之導電層之與前 述電極之接點,與電性上距離該接點最遠的部分之間的等 效電路中的電阻為高。 經濟部智慧財產局員工消費合作社印製 本發明申請專利範圍第33項係如申請專利範圍第3〇 項之電解處理裝置,其中,前述高電阻結構體係由内部含 有電解液之多孔物質構成。因此,藉由複雜地注入電鑛液 於多孔物質之内部,儘管是薄的結構體,實際上也可透過 於厚度方向沿著頗長的路徑之電解液,增加作為高電阻結 構體之電阻。 本發明申請專利範圍第34項係如申請專利範圍第33 項之電解處理裝置,其中,前述多孔物質係多孔陶竟。該 陶瓷可例舉氧化鋁、SiC、模來石(mullite)、氡化錐、一 氧化鈦、謹青石等。而為了穩定地保持電鍍液,以親水性 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 15 312144 1221862 A7 B7 五、發明說明(I6 ) 材料為佳。例如在氧化鋁系陶瓷的情況下,可使用孔徑10 至300μω、氣孔率2〇至60%、厚度〇· 2至200mm,較佳為 至50mm左右的陶瓷。 本發明申睛專利範圍第35項係如申請專利範圍第3〇 項之電解處理裝置,其中,前述高電阻結構體係以夹住該 间電阻結構體,並將前述電解液分割成複數部分之方式而 設置。藉此,可使用複數電解液,或使一方電極之污染及 反應不致影響另一方電極。 本發明申請專利範圍第36項係以在具有與陽極及陰 極之一方電極的接點之被處理基板,與對峙於該被處理基 板之另一方電極間所填滿的至少一部分電解液,設置電傳 導率比該電解液小的高電阻結構體,並藉由調整該高電阻 結構體之外形、内部構造、或不同電傳導率之構件的安裝 中之至少其一,以控制被處理基板表面之電場為其特徵之 電解處理裝置之電場狀態控制方法。 如上述積極地控制被處理基板表面之電場狀態成為所 希望的狀態時,可使利用被處理基板之電解處理所得之處 理狀態形成希望達成之面内分布的處理狀態。而電解處理 為電鍍處理之情況下,可謀求被處理基板上所形成的電鍍 膜厚的均一性,或使被處理基板上之電鍍膜厚具有任意的 分布。 本發明申請專利範圍第37項係如申請專利範圍第36 項之電解處理裝置之電場狀態控制方法,其中,前述外形 之調整係局電阻結構體之厚度的調整、高電阻結構體之平 請 先 閲 讀 背 之 注 意 事 項 再 填 寫 本 頁 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 16 312144 丄221862 B7 五、發明說明(17 ) 面上的形狀之調整中之至少任一種。 本發明申請專利範蘭繁 兮W耗固第38項係如申請專利範 項之電解處理裝置之電埸壯能械α 示利 〈冤場狀態控制方法,其中, 阻結構體係由多孔物質構成,Η< 巧電 成且多㈣f之㈣構造的謫 整係多孔物質之氣孔孔徑分I的 产 满 57 ▼的調整、氣孔率分布 整、f曲率分布之調整、材料組合之調整中之至少任一種' 事 項 再 本發明中請專利範圍第39項係如巾請專利範圍 項之電解處理裝置之電場狀態控制方法’其中,前述不同 電傳導率的構件之安裝的調整係由不同電傳導率的構件調 整高電阻結構體之遮蔽面積。 本發明申請專利範圍第40項係於具有與陽極及陰極 訂 之方電極的接點之被處理基板,與對峙於該被處理基板 之另一方電極間填滿電解液,以進行被處理基板之電解處 理之電解處理裝置,其特徵為:於前述電解液之至少一部 刀彡又置電傳導率比該電解液小的高電阻結構體,並且藉由 則述尚電阻結構體之外形、内部構造、或不同電傳導率的 經濟部智慧財產局員工消費合作社印製 構件之安裝中至少任一種調整機構,以控制被處理基板表 面之電場。 本發明申請專利範圍第41項係如申請專利範圍第4 ο 項之電解處理裝置,其中,前述外形之調整機構係高電阻 結構體之厚度調整、高電阻結構體之平面上的形狀調整中 之至少任一種。 本發明申請專利範圍第42項係如申請專利範圍第4〇 項之電解處理裝置’其中,前述高電阻結構體係由多孔物 本紙張尺度適” _家鮮(CNS)A4祕―χ 297ϋ) 17 312144 1221862 A7 五、發明說明(18 ) 質構成’而多孔物質之内部構造的調整機構 氣孔孔徑分布之調整、氣孔率分布之調整 = 調整、材料組合之調整中之至少任一種。 旱刀布之 本發明申請專利範圍第43項係如申請專利範圍第40 項之電解處理裝置,其中,利用前述電傳導率不同的構件 之安裝的調整機構,係藉由不同電傳導率 阻結構體之遮蔽面積。 间電 本發明申請專利範圍第44項係於具有與陽極及陰極 之-方電極的接點之被處理基板,與對崎於該被處理基板 之另一方電極間填滿電解液,以進行被處理基板之電解處 理之電解處理裝置,其特徵為:於前述電解液之至少一部 分設置電傳導率比該電解液小的高電阻結構體’而前述高 電阻結構體係由保持構件保持其外周,且於高電阻結構體 保持構件之間設有用以防止電解液由該部分漏出以致電 流流動的密封構件。 而上述高電阻結構體可例舉氧化鋁製成的多孔陶瓷、 碳化石夕陶竟等。又亦可使用將氣乙烯捆成纖維狀,並使之 相互熔接而形成者,或將聚乙烯醇等發泡體或鐵弗龍(商標 名稱)等纖維整形成織布或不織布之樣態者構成高電阻結 構體。再者’亦可為這些或導體與絕緣體、或組合兩個導 體之複合體。且亦可以在兩片隔膜間夾住其他種類之電解 液之結構體構成高電阻結構體。 本發明之申請專利範圍第45項係於具有與陽極及陰 極之一方電極的接點之被處理基板,與對峙於該被處理基V. Description of the invention (12) The space between the plated surface of the substrate and the anode close to the plated surface, and the aforementioned plating solution injection mechanism is provided through a plating solution injection hole provided in a part of the anode or disposed on the anode periphery. The nozzle of the part injects a plating solution between the anode and the plated surface of the substrate, and diffuses the plated surface of the substrate to form a plated device of its characteristics. Therefore, in a state where the substrate is held upward by the substrate holding portion, a plating solution is filled between the surface to be plated and the anode of the electrode arm portion to perform a plating treatment, and after the plating treatment, the plated surface and the electrode are discharged. The plating solution between the anodes of the arms and the electrode arms are raised at the same time so that the surface to be plated is opened. With the substrate held by the substrate holding portion, the pre-treatment and cleaning attached to the electric ore can be performed before and after the plating process. • Other treatments such as drying. In addition, when the plating solution is injected between the plated surface of the substrate and the anode, a liquid flow of the electric mineral liquid diffuses to the entire plated surface of the substrate, and the air between the plated surface of the substrate and the anode follows. The liquid flow of the electric ore liquid is pushed to the outside, and it is possible to prevent air from being mixed in with the plating solution, so that bubbles can be prevented from remaining in the electric ore liquid filled between the plated surface of the substrate and the anode. Item 21 of the scope of patent application of the present invention is the electroplating device for substrates as described in item 20 of the scope of patent application, wherein the aforementioned electro-mineral liquid injection mechanism is on the opposite side of the substrate opposite surface of the anode, and along the diameter direction of the anode It is arranged and has a plating solution introduction path connected to the plating solution supply pipe, and the plating solution injection hole is provided at a position opposite to the plating solution introduction hole provided on the anode side surface of the plating solution introduction path. Therefore, as the plating solution is injected between the plated surface of the substrate and the anode, it will be oriented perpendicular to the plating solution introduction tube -------- ^ --------- (Please read the back first Please pay attention to this page, please fill in this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives This paper is printed in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 12 312144 1221862 V. Description of the invention (13) Electroplating in the direction Fluid flow. Please read the precautions on the back before filling out this page. The 22nd scope of the patent application of the present invention is a plating device for substrates such as the 19th scope of the patent application, where the aforementioned electro-mineral fluid injection mechanism is cross-shaped, radial, or circular. It is arranged on the opposite side of the substrate-opposing surface of the anode, and has a plating solution introduction path connected to the plating solution supply pipe. The plating solution introduction holes on the anode side of the plating solution introduction path are opposite to each other. The aforementioned plating solution injection hole is provided at the position. #Here, as the electroforging fluid / mainly enters the plated surface of the substrate and the anode, an electric mineral fluid flow is generated which diffuses radially in each quadrant divided by the electric mineral fluid introduction pipe. Item 23 of the scope of patent application of the present invention is that the anode is arranged close to at least a part of the plated surface of the substrate to which the cathode is energized, and when the plating solution is injected between the plated surface and the anode, the plated surface and the anode are used to crosslink the substrate. An electroplating method for a substrate between the plating solution columns and injecting a plating solution using the plating solution column as a starting point. The Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the scope of application of the present invention for the patent application No. 24 is a plating method for a substrate such as the scope of the patent application No. 23, in which a plating solution is injected from a portion of the anode or the periphery of the anode Inject a plating solution between the plated surface of the substrate and the anode. Item 25 of the scope of patent application of the present invention is that the anode is arranged close to at least a part of the plated surface of the substrate on which the cathode is energized, and when the plating solution is injected into the space between the plated surface and the anode, the plating solution is diffused on the plated surface of the substrate. And, the method of electroplating is to make the substrate and the anode relatively rotate and gradually approach the substrate with its characteristics. Thereby, the air bubbles between the substrate and the anode can be gradually moved outward as the two approach each other, and can be blown out. This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 13 312144 1221862 A7 V. Description of invention (14) The 26th item in the scope of patent application for this invention is the substrate as in the 25th item in patent scope In the electroplating method, an electroplating solution impregnating material composed of a porous body having a water-retaining property is arranged on the opposite surface of the substrate of the anode, and the electroplating solution is provided on the opposite surface of the substrate of the electroplating liquid impregnation material. A mechanism that relatively rotates the impregnated material and the substrate so that the plating solution therebetween diffuses radially outward. Thereby, the bubbles between the substrate and the anode can be almost completely discharged. Item 27 of the scope of patent application of the present invention is to fill at least a part of the electrolyte between the substrate to be processed having a contact with one of the anode and the cathode of the cathode, and the other electrode facing the substrate to be processed. An electrolytic treatment method with a characteristic of providing a high-resistance structure having a lower electrical conductivity than the electrolytic solution to perform electrolytic treatment on the surface of the substrate to be processed is provided. As a result, the resistance between the anode | y and the cathode immersed in the electrolyte can be made higher through the high-resistance structure than in the case of only the electrolyte, and the current caused by the resistance of the substrate surface treated by | i can be reduced. In-plane difference in density. At this time, the contact between the substrate to be processed and the cathode can be electrolytically plated, and the contact between the substrate to be processed and the anode can be electrolytically etched. The Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed the 28th patent application scope of the present invention, which is an electrolytic treatment method such as the 27th patent application scope, in which the aforementioned high-resistance structural system makes the resistance in its equivalent circuit more The resistance in the equivalent circuit between the contact point of the conductive layer on the surface of the substrate to be processed and the aforementioned electrode and the portion which is electrically farthest from the contact point is high. This can further reduce the in-plane difference in current density caused by the resistance of the conductive layer formed on the substrate to be processed. Item 29 of the scope of patent application of the present invention is to perform the electrolytic unit of the scope of patent application No. 2? With the substrate held by the substrate holding section 312144 1221862 A7 B7 V. Explanation of the invention (15) Principle of electrolysis Approach. _ (Please read the note on the back? Matters before filling out this page) The 30th item in the scope of patent application of the present invention relates to a substrate to be processed having a contact with one of the anode and cathode electrodes, and another object facing the substrate to be processed. An electrolytic treatment device in which one electrode is filled with an electrolytic solution to perform electrolytic treatment of a substrate to be processed is characterized in that a high-resistance structure having an electric conductivity lower than that of the electrolytic solution is provided on at least a part of the electrolytic solution. Item 31 of the scope of patent application of the present invention is the electrolytic processing device according to item 30 of the scope of patent application, which includes a substrate holding section that performs electrolytic processing while holding the substrate upward with the substrate holding section. Item 32 of the scope of patent application of the present invention is the electrolytic treatment device of item 30 of the scope of patent application, in which the aforementioned high-resistance structure system makes the resistance in its equivalent circuit more than that of the conductive layer formed on the surface of the substrate to be processed. The resistance in the equivalent circuit between the contact point of the electrode and the portion which is electrically farthest from the contact point is high. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The scope of application of the invention is No. 33. The electrolytic treatment device is No. 30, in which the aforementioned high-resistance structural system is composed of a porous substance containing an electrolyte inside. Therefore, by intricately injecting the electro-mineral fluid into the porous material, even though it is a thin structure, it can actually pass through the electrolyte along a long path in the thickness direction to increase the resistance as a high-resistance structure. Item 34 of the scope of patent application of the present invention is the electrolytic treatment device of item 33 of the scope of patent application, wherein the aforementioned porous substance is porous ceramic. Examples of the ceramic include alumina, SiC, mullite, hafnium cone, titanium oxide, and emeraldite. In order to maintain the electroplating solution stably, the paper size is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) 15 312144 1221862 A7 B7. 5. Inventory (I6) material is better. For example, in the case of alumina-based ceramics, ceramics having a pore diameter of 10 to 300 µω, a porosity of 20 to 60%, a thickness of 0.2 to 200 mm, and preferably about 50 mm can be used. Item 35 of the patent application scope of the present invention is the electrolytic treatment device such as the item 30 of the patent application scope, wherein the high-resistance structure system sandwiches the resistance structure and divides the electrolyte into a plurality of parts. And set. In this way, multiple electrolytes can be used or the pollution and reaction of one electrode will not affect the other electrode. Item 36 of the scope of patent application of the present invention is to provide at least a part of an electrolyte filled between a substrate to be processed having a contact with one of the anode and the cathode, and at least a part of the electrolyte facing the other electrode opposed to the substrate to be processed. A high-resistance structure having a conductivity lower than that of the electrolytic solution, and controlling at least one of the external shape, the internal structure, or the installation of components with different electrical conductivity of the high-resistance structure to control the surface of the substrate to be processed. An electric field state control method for an electrolytic treatment device having an electric field as its characteristic. As described above, when the state of the electric field on the surface of the substrate to be processed is actively controlled to a desired state, the processing state obtained by the electrolytic treatment of the substrate to be processed can be used to form a processing state that is desired to be distributed in the plane. When the electrolytic treatment is an electroplating treatment, the uniformity of the thickness of the plating film formed on the substrate to be processed can be achieved, or the distribution of the thickness of the plating film on the substrate to be processed can be arbitrarily distributed. Item 37 of the scope of patent application of the present invention is the electric field state control method of the electrolytic treatment device according to item 36 of the scope of patent application, wherein the adjustment of the aforementioned shape is the adjustment of the thickness of the local resistance structure and the leveling of the high resistance structure. Read the notes on the back and fill in this page to print the paper printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 16 312144 丄 221862 B7 V. Description of the invention (17 At least one of the adjustments of the shape on the surface. Fan Lan Fan Xi of the patent application of the present invention, the 38th item of the solid power consumption is the electric power of the electrolytic treatment device of the patent application of the patent α, a method of controlling the state of the field, wherein the resistance structure system is composed of a porous substance, The pore size of the porosity of I-shaped porous material with a clever structure and a multi-dimensional structure is 57% of at least one of ▼ adjustment, adjustment of porosity distribution, adjustment of f curvature distribution, and adjustment of material combination 'The item 39 in the patent scope of the present invention is the method for controlling the electric field state of the electrolytic treatment device in the scope of the patent scope', wherein the adjustment of the installation of the components with different electrical conductivity is performed by components with different electrical conductivity. Adjust the shielding area of the high-resistance structure. Item 40 of the scope of patent application of the present invention relates to a substrate to be processed having a contact with a square electrode fixed to the anode and a cathode, and the other electrode opposed to the substrate to be processed is filled with an electrolyte to perform the processing of the substrate. The electrolytic treatment device for electrolytic treatment is characterized in that at least one blade of the electrolyte is provided with a high-resistance structure having a lower electrical conductivity than the electrolyte, and the external and internal structures of the resistance structure are described. At least one of the adjustment mechanisms in the construction, or the installation of printed components of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs with different electrical conductivity, to control the electric field on the surface of the substrate to be processed. Item 41 of the scope of patent application of the present invention is the electrolytic treatment device as described in item 4 of the scope of patent application, wherein the adjustment mechanism of the aforementioned shape is one of the adjustment of the thickness of the high-resistance structure and the shape adjustment on the plane of the high-resistance structure. At least either. Item 42 of the scope of patent application of the present invention is the electrolytic treatment device of item 40 of the scope of patent application, wherein the aforementioned high-resistance structure system is composed of porous materials and paper of appropriate size. ”_ Jia Xian (CNS) A4 Secret-χ 297ϋ) 17 312144 1221862 A7 V. Description of the invention (18) At least one of the adjustment of stomatal pore size distribution, adjustment of porosity distribution = adjustment, adjustment of material combination, and adjustment mechanism of the internal structure of porous material. Item 43 of the scope of patent application of the present invention is the electrolytic treatment device of item 40 of the scope of patent application, in which the adjustment mechanism using the installation of the aforementioned components with different electrical conductivity is used to shield the structured area of the structure with different electrical conductivity. The 44th item in the scope of patent application of the present invention is based on the substrate to be processed having a contact with the anode and the cathode of the square electrode, and the other electrode on the substrate to be processed is filled with an electrolyte to perform An electrolytic treatment device for electrolytic treatment of a substrate to be processed, characterized in that at least a part of the electrolyte is provided with an electric conductivity lower than that of the electrolyte. And the aforementioned high-resistance structural system holds its outer periphery by a holding member, and a sealing member is provided between the high-resistance structural body holding members to prevent the electrolyte from leaking out of this portion so that a current flows. Examples include porous ceramics made of alumina, carbonized ceramics, etc. It is also possible to use gaseous ethylene bundled into a fibrous shape and weld them to each other, or use foams such as polyvinyl alcohol or iron. Those fibers such as furon (trade name) are formed into a woven or non-woven fabric to form a high-resistance structure. Furthermore, 'these may also be conductors and insulators, or a combination of two conductors. The structure in which other types of electrolytes are sandwiched between the diaphragms constitutes a high-resistance structure. The 45th item of the scope of patent application of the present invention relates to a substrate to be treated having a contact with one of an anode and a cathode, and an opposing structure. Processed base
I ij 4 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 本紙張尺度適用中國國家標準(CNS)A4規格⑽x 297公餐) 18 312144 經濟部智慧財產局員工消費合作社印製 1221862 A7 B7 五、發明說明(19) 板之另一方電極間填滿電解液’以進行被處理基板之電解 處理之電解處理裝置,其特徵為:於前述另一方電極與被 處理基板之間配置電解液浸潰材,同時於前述另一方電極 設置將電解液供給於電解液浸潰材内的電解液導通孔,並 於前述電解液導通孔内部插入管體,以將通過前述管體而 供給至電解液浸潰材内的電解液從電解液浸溃材的反面供 給,而填滿於電解液浸潰材與被處理基板間。 管體最好選擇不會被電解液侵入的材質。因而即使藉 由該電解處理裝置反覆電解處理步驟,管體前端的内徑也 不會因為時間的經過而擴大,因此即使經過一段時間,製 造當初的理想液體擴散狀態也可同樣地進行,而不會有空 氣捲入,以致氣泡堆積於電解液浸潰材與被處理基板間之 問題,而可經常獲得所希望的電解處理。 本發明申請專利範圍第46項係如申請專利範圍第45 項之電解處理裝置’其中’於前述電解液浸潰材設置電解 液通路部’以連績於前述電解液導通孔。 本發明申請專利範圍第47項係於具有與陽極及陰極 之一方電極的接點之被處理基板,與對峙於該被處理基板 之另一方電極間填滿電解液,以進行被處理基板之電解處 理之電解處理裝置,其特徵為:於前述另一方電極與被處 理基板間設置電解液浸潰材,並且於前述電解液浸潰材内 形成預定深度的電解液通路部,以將從前述另一方電極通 過電解液通路部而供給於電解液浸潰材内的電解液,從電 解液浸潰材的反面供給,而填滿於電解液浸潰材與被處理 I--I I - I I-----訂--------- ,(請先閱讀背面之注意事項再填寫本頁)I ij 4 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed to the Chinese National Standard (CNS) A4 size ⑽ x 297 meals 18 312144 Printed by the Consumers’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 A7 B7 19) An electrolytic treatment device for filling the electrolyte between the other electrodes of the plate to perform electrolytic treatment of the substrate to be processed, which is characterized in that an electrolyte impregnating material is arranged between the other electrode and the substrate to be processed, and The other electrode is provided with an electrolyte passage hole for supplying an electrolyte into the electrolyte impregnating material, and a tube body is inserted inside the electrolyte passage hole to supply the electrode through the tube body into the electrolyte impregnating material. The electrolytic solution is supplied from the reverse side of the electrolytic solution impregnating material, and is filled between the electrolytic solution impregnating material and the substrate to be processed. The pipe body is preferably selected from materials that are not penetrated by the electrolyte. Therefore, even if the electrolytic treatment step is repeated by this electrolytic treatment device, the inner diameter of the front end of the pipe body will not be enlarged due to the passage of time. Therefore, even after a period of time, the ideal liquid diffusion state at the time of manufacture can be performed similarly without There is a problem that air is entangled, so that bubbles accumulate between the electrolyte impregnated material and the substrate to be processed, and a desired electrolytic treatment can often be obtained. Item 46 of the scope of patent application of the present invention is the electrolytic treatment device 'item 45 of the scope of patent application of the invention, in which' the electrolytic solution passage portion is provided in the aforementioned electrolytic solution impregnating material 'so as to be successive to the aforementioned electrolytic via. Item 47 of the scope of patent application of the present invention relates to a substrate to be processed having a contact with one of an anode and a cathode, and the other electrode opposed to the substrate to be processed is filled with an electrolyte to perform electrolysis of the substrate to be processed. The electrolytic treatment device for processing is characterized in that an electrolytic solution impregnating material is provided between the other electrode and the substrate to be processed, and an electrolytic solution passage portion having a predetermined depth is formed in the electrolytic solution impregnating material, so that One of the electrodes is supplied to the electrolytic solution in the electrolytic solution impregnated material through the electrolytic solution passage portion, and is supplied from the reverse side of the electrolytic solution impregnated material, and is filled with the electrolytic solution impregnated material and the processed material I--II-I I- ---- Order ---------, (Please read the notes on the back before filling this page)
經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 圖 20 1221862 A7 ________B7__ _ 五、發明說明(2G ) 基板間。而且即使反覆該電解處理步驟,電解液通路部前 端的内徑也不會因為時間的經過而擴大,因而即使經過— 段時間,製造當初的理想液體擴散狀態也可同樣地進行, 而不會有空氣捲入,以致氣泡堆積於電解液浸潰材與被處 理基板間之問題,而可經常獲得所希望的電解處理。 本發明申請專利範圍第48項係如申請專利範圍第47 項之電解處理裝置,其令,於前述另一方電極與電解液浸 潰材之間a又置用以儲存電解液之液體儲存部,並將儲存於 該液體儲存部之電解液供給至前述電解液浸潰材内。 本發明申請專利範圍第49項係於具有與陽極及陰極 之一方電極的接點之被處理基板,與對峙於該被處理基板 之另一方電極間填滿電解液,以進行被處理基板之電解處 理之電解處理裝置,其特徵為:於前述另一方電極與被處 理基板之間設置電解液浸潰材,且前述電解液浸潰材係依 其設置部位而使通過電解液浸潰材的電解液之通過電阻不 同而構成,以將從前述另一方電極側供給至電解液浸潰材 内的電解液,從電解液浸潰材的反面,以因應其設置部位 的供給量供給,而填滿於電解液浸潰材與被處理基板間。 【圖面之簡單說明】 第1A圖至第1C圖係使用本發明基板電鑛裝置之電鑛 方法進行電鍍之步驟之一例的剖視圖。 第2圖係本發明實施形態之整個基板電鑛裝置的俯視 第3圖係電鍍單元之俯視圖 312144 -----------------^^1 f%先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1221862 A7 B7 五、發明說明(21) 第4圖係第3圖之A-A線剖視圖。 第5圖係基板保持部及陰極部之放大剖視圖。 第6圖係第3圖之前視圖。 第7圖係第3圖之右側視圖。 第8圖係第3圖之後視圖。 第9圖係第3圖之左側視圖。 第10圖係預塗•回收臂之前視圖。 第11圖係基板保持部之俯視圖。 第12圖係第11圖之B-B線剖視调。 第1 3圖係第11圖之OC線剖視圖。 第14圖係陰極部之俯視圖。 第15圖係第14圖之D-D線剖視圖。 第16圖係電極臂部之俯視圖。 第1 7圖係第1 6圖之縱剖前視圖。 第18圖係第16圖之E-E線剖視圖。 第19圖係放大第18圖之一部分後的放大圖。 第20圖係除去電極臂部之電極部的外殼後之俯視 圖。 第21圖係將電鍍液注入於基板之被電鍍面與陽極間 之初期階段的模式剖視圖。 第22圖係將電鍍液注入於基板之被電鍍面與陽極 間,電鑛液擴散於基板之被電鑛面全面之狀態的模式俯視 第23A圖及第23B圖係本發明第2實施形態相當於第 ---------—^__w^—-----訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 21 312144 1221862 A7Printed by the Consumers and Consumers Agency of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 1221862 A7 ________B7__ _ 5. Description of the invention (2G) between the substrates. Moreover, even if the electrolytic treatment step is repeated, the inner diameter of the front end of the electrolyte passage portion will not be enlarged due to the passage of time, so even if a period of time elapses, the ideal liquid diffusion state at the time of manufacture can be performed in the same manner without any Air is entrained so that air bubbles accumulate between the electrolyte-impregnated material and the substrate to be processed, and the desired electrolytic treatment can often be obtained. Item 48 of the scope of patent application of the present invention is an electrolytic treatment device such as item 47 of the scope of patent application, which causes a liquid storage section for storing the electrolyte to be placed between the other electrode and the electrolyte impregnating material, The electrolytic solution stored in the liquid storage unit is supplied into the electrolytic solution impregnating material. Item 49 of the scope of patent application of the present invention relates to a substrate to be processed having a contact with one of the anode and the cathode, and the other electrode facing the substrate to be processed is filled with an electrolyte to perform electrolysis of the substrate to be processed. The electrolytic treatment device for processing is characterized in that an electrolytic solution impregnating material is provided between the other electrode and the substrate to be processed, and the electrolytic solution impregnating material is electrolyzed by the electrolytic solution impregnating material according to its installation location. The liquid has different resistances, so that the electrolyte supplied from the other electrode side to the electrolyte impregnated material is filled from the reverse side of the electrolyte impregnated material in accordance with the supply amount of the installation site and filled. Between the electrolyte impregnated material and the substrate to be processed. [Brief Description of Drawings] Figures 1A to 1C are cross-sectional views of an example of a plating process using the electric ore method of the substrate electric ore device of the present invention. Figure 2 is a top view of the entire substrate electric mining device according to an embodiment of the present invention. Figure 3 is a top view of a plating unit. 312144 --- ^^ 1 f% Please note this page before filling in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1222182 A7 B7 V. Description of Invention (21) Figure 4 is a cross-sectional view taken along line AA in Figure 3. Fig. 5 is an enlarged sectional view of the substrate holding portion and the cathode portion. Figure 6 is a front view of Figure 3. Figure 7 is a right side view of Figure 3. Figure 8 is a rear view of Figure 3. Figure 9 is a left side view of Figure 3. Figure 10 is a front view of the pre-coating / recovering arm. Fig. 11 is a plan view of a substrate holding portion. Figure 12 is a cross-sectional view taken along line B-B in Figure 11. Figure 13 is a sectional view taken along the line OC in Figure 11. Fig. 14 is a plan view of a cathode portion. Fig. 15 is a sectional view taken along line D-D in Fig. 14. Fig. 16 is a plan view of an electrode arm portion. Fig. 17 is a longitudinal sectional front view of Fig. 16; Fig. 18 is a sectional view taken along line E-E in Fig. 16. FIG. 19 is an enlarged view of a part of FIG. 18. Fig. 20 is a plan view showing the case of the electrode portion of the electrode arm portion removed. Fig. 21 is a schematic cross-sectional view of an initial stage in which a plating solution is injected between a plated surface of a substrate and an anode. FIG. 22 is a schematic plan view of a state in which a plating solution is injected between a plated surface of a substrate and an anode, and an electric ore liquid is diffused across the entire surface of the substrate. FIGS. 23A and 23B are equivalent to the second embodiment of the present invention. Article No. ---------— ^ __ w ^ —----- Order --------- (Please read the precautions on the back before filling out this page) This paper size applies to China Standard (CNS) A4 (210 X 297 mm) 21 312144 1221862 A7
五、發明說明(22 ) 經濟部智慧財產局員工消費合作社印製 22圖之圖面。 第24圖係本發明第3實施形態相當於第21圖之圖 面0 第25圖係本發明第3實施形態相當於第22圖之圖 面。 第26圖係本發明第4實施形態相當於第21圖之圖 面。 第27圖係本發明第4實施形態相當於第22圖之厨 面。 第28圖係本發明第5實施形態之主要部分斜視圖d 第29圖係本發明第5實施形態之主要部分的縱剖前視 圖。 第30圖係本發明第5實施形態之變形例的主要部分斜 視圖。 第31A圖係本發明第6實施形態中的電鍍液浸潰材之 前視圖,第31B圖係本發明第6實施形態中的電鍍液浸潰 材的仰視圖。 第32A圖係本發明第7實施形態中的電鍍液浸潰材之 前視圖,第32B圖係本發明第7實施形態中的電鍍液浸潰 材的俯視圖。 第33圖係第32A圖所示之實施形態之其他使用例的前 視圖。 第34圖係將電鍍液浸潰材安裝於陽極之狀態的放大 剖視圖。 --------訂---------^^^1 ·(請先閱讀背面之注意^^項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 22 312144 經濟部智慧財產局員工消費合作社印製 1221862 A7 B7 五、發明說明(23) 第35圖係將電鍍液浸潰材安裝於陽極之狀態的斜視 圖。 第36圖係將電鍍液浸潰材安裝於陽極之其他狀態的 放大剖視圖。 第37圖係將電鍍液浸潰材安裝於陽極之其他狀態的 放大剖視圖。 第38圖係將電鍍液浸潰材安裝於陽極之再其他狀態 的放大剖視圖。 第39圖係應用本發明再一其他實施形態之電解電鍍 裝置的電解處理裝置之主要部分概要圖。 第40圖係第39圖之電性等效電路圖。 第41圖係以第39圖所示之電鍍裝置及習知之電鍍裝 置進行電鍍時之基板面内中的電鍍膜之膜厚分布圖。 第42圖係應用本發明再一其他實施形態之電解電鍍 裝置的電解處理裝置之主要部分概要圖。 第43圖係使用第42圖所示之電鍍裝置進行電鍍處理 時之區域A及區域B中的電鍍液之銅離子濃度變化曲線 圖。 第44圖係應用本發明再其他實施形態之電解電鑛裝 置的電解處理裝置之主要部分概要圖。 第45圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第46圖係於基板W進行銅電鍍時,基板W外周部分附 近的銅電鍍之膜厚測定結果的示意圖。 ^紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 23 312144 -------------------訂---------^^^1 ·(請先閱讀背面之注意事項再填寫本頁) !221862 A7 B7 五、發明說明(24 ) 第47圖係本發明再其他實施形態之示意圖。 第48圖係本發明再其他實施形態之示意圖。 "(請先閱讀背面之注意事項再填寫本頁) 第49圖係電解電鍍裝置之多孔陶瓷板外周部分附近 的主要部分概略圖。 第50A圖及第50B圖係本發明再其他實施形態之示意 圖。 第51圖係本發明再其他實施形態之示意圖。 第52A圖至第52D圖係第51圖之電解電鍍裝置所使用 的高電阻結構體之俯視圖。 第53圖係本發明再其他實施形態之示意圖。 第54圖係使用均一厚度之多孔陶瓷板及第53圖所示 之厚度分布狀態之多孔陶瓷板,於基板W上進行電鍍時之 電鍍膜厚的測定結果圖。 第5 5圖係本發明再一其他實施形態之示意圖。 第56圖係本發明再一其他實施形態之示意圖。 第57圖係本發明再一其他實施形態之示意圖。 第58圖係本發明再一其他實施形態之示意圖。 經濟部智慧財產局員工消費合作社印製 第59圖係本發明再一其他實施形態之示意圖。 第60A圖及第60B圖係本發明再其他實施形態之示意 圖。 第61A圖及第61B圖係各向異性構造材料之一例的示 意圖。 第62圖係本發明再其他實施形態之面朝下方式之電 解電鍍裝置的示意圖。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 24 312144 1221862 A7 B7 五、發明說明(25) 第63圖係本發明再其他實施形態之密閉式電解電錢 裝置的示意圖。 第64圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第65圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第66圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第6 7圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第68圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第69圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第70圖係本發明再其他實施形態之電解電鍍裝置的 概略構成圖。 第71圖係習知之電鍍裝置的概要圖。 經濟部智慧財產局員工消費合作社印製 第72圖係使用習知之電鍍裝置,於形成有不同膜厚的 導電層之基板上進行鋼之電解電鍍時之基板面内的電錢膜 之膜厚分布圖。 第73圖係使用習知之電鍍裝置於不同大小的基板上 進行鋼之電解電鍍時之基板面内的電锻膜之膜厚分布圖。 第74圖係第71圖所示之電鍍裝置之電性等效電路 圖0 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 312144 25 1221862 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(26 ) 【元件符號說明】1 半導體基板 2 絕緣膜 4 (配線用)溝槽 6 銅層 1 0裝卸部 14運送機器人 18電鍍液供給設備 22電鍍液托盤 26搖動臂 30電極臂部 34固定喷嘴 38陰極部 42氣缸 46旋轉式電動機 50基板搬出搬入口 54上下動作電動機 58支持軸 62氣缸 66電鍍液回收喷嘴 70支持臂 74推壓片 78線圈彈簧 82支持板 la導電層 3接觸孔 5阻障層 7種子層 12電鍍單元 16電鍍液槽 20基板處理部 24旋轉轴 28電極部 32預塗·回收臂 36基板保持部 40蓋體 44氣缸 48輸送帶 52底板 56旋轉式電動機 60旋轉式致動器 64預塗喷嘴 68平台 72定位板 7 6扣爪部 80按壓棒 84支柱 --------------------訂---------^^^1 ·(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 26 312144 1221862 A7 ----------B7_____ 經濟部智慧財產局員工消費合作社印製 五、發明說明(27) 86框體 88陰極 9〇密封材 92球形軸承 94外殼 9 6支持框 96a突出部 9 8陽極 98a電鍵液供給口(電鍍液注入孔) 98b貫穿孔 98c添加劑注入孔 100吸引室 102電鍍液供給管 1〇4電鍍液導入管 104a電鍍液導入路徑 l〇4b電鍍液導入口 105添加劑導入管 10 5 a添加劑導入路徑 105b添加劑導入口 106電鍍液排出管 110電鍍液浸潰材 1 l〇a開縫 110b突起 110c圓錐面 112固定插銷 112a頭部 112 b釣鉤狀部 112c尖塔狀部 114板簧 116制動棒 120電鑛液柱 120線圈彈簧 122粘著劑 210電鍍液 212電鍍槽 214陽極板 214a中央孔 216收容部 218凸緣狀密封材 220接點 222高電阻結構體 224多孔陶瓷板 224a貫穿孔 226電鍍電源 230載置台 232保持具 234凸緣狀密封材 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 27 312144 --------------------訂— \請先閱讀背面之注意事項再填寫本頁) Φ. 1221862 A7 B7 — I — --------訂--I------^^^1 _ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 五、發明說明(28) 2 3 6接點 240高電阻結構體 244第1電鍍室 250電鍍槽 254蓋體 258接點 260b隔膜 262b網狀物 266電解液室 270電鍍液 274高電阻電鍍液 278氧氣 3 3 2保持構件 336接點 339細孔 341電鍍液導入管 342a多孔物質(多孔陶瓷) 350a絕緣性構件 3 51絕緣形構件保持具 360a密封構件部 365開縫 367貫穿孔 370電鍍液 410電鍍液 238陽極板 242多孔陶瓷板 246第2電鍍室 252陽極板 256凸緣狀密封材 260a隔膜 262a網狀物 264電鍍室 268高電阻電解液室 272電解液(電鍍液) 276高電阻結構體 330基板載置台 334凸緣狀密封材 338陽極板 340高電阻結構體 342多孔陶瓷板(多孔物質) 350絕緣性構件 350b絕緣性構件 3 6 0密封構件 360b絕緣性構件部 366孔 368高電阻電解液室 376高電阻結構體 430基板載置台 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 28 312144 1221862 A7 ___ B7 432保持構件 434凸緣狀密封材 436接點 438陽極板(電極) 439電解液導入孔(電鍍液導入(通)孔) 440多孔體 440a(上部)多孔體 440b(下部)多孔體 441電鍍液導入管 445管體 447管體 450液體儲存部 455電鍍液供給部 457電解液通路部 459電解液通路部 461主通路 600電鍍液 602電鍍槽 604基板保持部 6 0 6陽極板 608電鍍液喷射管 61 〇電鍍液收容部 612電鍍電源 A基板授受位置 B電鍍位置 B氣泡 C前處理•清洗位置 Cl,C2氣孔構造 Μ電鍍 Q電鍍液 R液柱 S導電層 W基板 【較佳實施例之詳細說明】 - I — — — — — — I— ---I I-- X請先閱讀背面之注意事項再填寫本頁) 五、發明說明(29 ) 經濟部智慧財產局員工消費合作社印製 以下參照圖面說明本發明之實施形態。該實施形態之 基板電鍍裝置係對半導體基板表面進行電解銅電鍍,以獲 得形成有由銅層構成的配線之半導體裝置時所使用。以下 參照第1A圖至第1C圖說明該電鍍步驟。 如第1A圖所不’半導體基板W中係於形成有半導體元 件的半導體基板1上之導電層la上方堆積二氧化矽(Si〇) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 29 312144 1221862 A7 -------B7 _ 五、發明說明(3G ) 構成的絕緣膜2,且利用微影•蝕刻技術(Π thography 61;〇11丨11£)形成有接觸孔3及配線用溝槽4,並於其上形成 有氮化鈦(TiN)等構成的阻障層^(barrier),再於該阻障 層5上方形成種子層7以作為電解電鍍之供電層。 繼之’如第1β圖所示,於前述半導體基板W表面進行 銅電鍍,藉此將銅填充於半導體基板1之接觸孔3及溝槽 4中,並於絕緣膜2上方堆積鋼層6。然後,利用化學機械 研磨(CMP)除去絕緣膜2上的鋼層6,使填充於接觸孔3及 配線用溝槽4的銅層6之表面與絕緣膜2之表面形成同一 平面。藉此,便可如第1C圖所示,形成由銅層6構成的配 線。 第2圖係本發明實施形態之整個基板電鍍裝置的俯視 圖’如第2圖所示,該電鍍裝置係在同一設備内設有··於 内部收容複數基板W的兩座裝卸部1〇、進行電鍍處理及其 附屬處理的兩座電鍍單元12、在裝卸部1〇與電鍍單元12 間進行基板W之運送的運送機器人14、以及具有電鍵液槽 16的電鍍液供給設備18。 經濟部智慧財產局員工消費合作社印製 如第3圖所示,前述電鍍單元12内設有用以進行電鍍 處理及其附屬處理的基板處理部2〇,並且配置有鄰接於該 基板處理部20以儲存電鍍液之電鍍液托盤22。此外,設 置有保持於以旋轉轴24為中心而搖動的搖動臂26前端, 且具有在前述基板處理部20與電鍍液托盤22之間搖動的 電極部28之電極臂部30。再者,於基板處理部2〇之側方 配置有預塗·回收臂32、以及朝基板喷射純水或離子水等 312144 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 21經濟部智慧財產局員工消費合作社印製 2V. Description of the invention (22) The map of the 22 map printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Fig. 24 is a diagram corresponding to Fig. 21 in the third embodiment of the present invention. Fig. 25 is diagram corresponding to Fig. 22 in the third embodiment of the present invention. Fig. 26 is a view corresponding to Fig. 21 according to a fourth embodiment of the present invention. Fig. 27 is a fourth embodiment of the present invention corresponding to the kitchen noodle of Fig. 22. Fig. 28 is a perspective view of a main part of a fifth embodiment of the present invention. D Fig. 29 is a longitudinal sectional front view of a main part of the fifth embodiment of the present invention. Fig. 30 is a perspective view of a main portion of a modification of the fifth embodiment of the present invention. Fig. 31A is a front view of a plating solution impregnating material in a sixth embodiment of the present invention, and Fig. 31B is a bottom view of the plating solution impregnating material in a sixth embodiment of the present invention. Fig. 32A is a front view of a plating solution impregnating material in a seventh embodiment of the present invention, and Fig. 32B is a plan view of the plating solution impregnating material in a seventh embodiment of the present invention. Fig. 33 is a front view of another example of use of the embodiment shown in Fig. 32A. Fig. 34 is an enlarged sectional view showing a state in which a plating solution impregnating material is mounted on an anode. -------- Order --------- ^^^ 1 · (Please read the note on the back ^^ item before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 22 312144 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 A7 B7 V. Description of the invention (23) Figure 35 is an oblique view of the state where the plating solution immersion material is installed on the anode. Fig. 36 is an enlarged cross-sectional view of another state where the plating solution impregnating material is mounted on the anode. Fig. 37 is an enlarged cross-sectional view of another state where the plating solution impregnating material is mounted on the anode. Fig. 38 is an enlarged cross-sectional view of a state in which a plating solution impregnating material is mounted on an anode. Fig. 39 is a schematic diagram of a main part of an electrolytic treatment apparatus to which an electrolytic plating apparatus according to still another embodiment of the present invention is applied. Figure 40 is an electrical equivalent circuit diagram of Figure 39. Fig. 41 is a film thickness distribution diagram of the plated film in the substrate surface when the electroplating device shown in Fig. 39 and the conventional electroplating device are used for electroplating. Fig. 42 is a schematic diagram of a main part of an electrolytic treatment apparatus to which an electrolytic plating apparatus according to still another embodiment of the present invention is applied; Fig. 43 is a graph showing a change in the copper ion concentration of the plating solution in areas A and B when the electroplating apparatus shown in Fig. 42 is used for the plating treatment. Fig. 44 is a schematic diagram of a main part of an electrolytic treatment apparatus to which an electrolytic power ore apparatus according to still another embodiment of the present invention is applied. Fig. 45 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 46 is a graph showing the results of measuring the thickness of the copper plating near the outer peripheral portion of the substrate W when the substrate W is subjected to copper plating. ^ Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 23 312144 ------------------- Order --------- ^^^ 1 · (Please read the notes on the back before filling out this page)! 221862 A7 B7 V. Description of the Invention (24) Figure 47 is a schematic diagram of the present invention and other embodiments. Fig. 48 is a schematic diagram of still another embodiment of the present invention. " (Please read the precautions on the back before filling out this page) Figure 49 is a schematic diagram of the main parts near the outer periphery of the porous ceramic plate of the electrolytic plating device. Figures 50A and 50B are schematic views of still another embodiment of the present invention. Fig. 51 is a schematic diagram of still another embodiment of the present invention. Figures 52A to 52D are top views of a high-resistance structure used in the electrolytic plating apparatus of Figure 51. Fig. 53 is a schematic diagram of still another embodiment of the present invention. Fig. 54 is a graph showing measurement results of plating film thickness when a porous ceramic plate having a uniform thickness and a porous ceramic plate having a thickness distribution state shown in Fig. 53 are used for plating on a substrate W; Fig. 55 is a schematic diagram of still another embodiment of the present invention. Fig. 56 is a schematic diagram of still another embodiment of the present invention. Fig. 57 is a schematic diagram of still another embodiment of the present invention. Fig. 58 is a schematic diagram of still another embodiment of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 59 is a schematic diagram of another embodiment of the present invention. Figures 60A and 60B are schematic views of still another embodiment of the present invention. 61A and 61B are schematic views of an example of an anisotropic structural material. Fig. 62 is a schematic view of a face-down electrolytic plating apparatus according to still another embodiment of the present invention. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 24 312144 1221862 A7 B7 V. Description of the invention (25) Figure 63 is a schematic diagram of a closed electrolytic money device according to still other embodiments of the present invention. . Fig. 64 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 65 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 66 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 67 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 68 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 69 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 70 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Fig. 71 is a schematic view of a conventional plating apparatus. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 72 shows the film thickness distribution of the electric money film on the substrate surface when electrolytic plating of steel is performed on a substrate with conductive layers of different thicknesses using a conventional electroplating device. Illustration. Fig. 73 is a film thickness distribution diagram of an electro-forged film in a substrate surface when electrolytic plating of steel is performed on a substrate of a different size using a conventional electroplating device. Figure 74 is the electrical equivalent circuit diagram of the electroplating device shown in Figure 71. 0 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 312144 25 1221862 A7 B7 Employees ’Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the cooperative V. Description of the invention (26) [Description of component symbols] 1 Semiconductor substrate 2 Insulating film 4 (for wiring) Groove 6 Copper layer 1 0 Loading and unloading unit 14 Transport robot 18 Plating solution supply equipment 22 Plating solution tray 26 Swing arm 30 electrode arm portion 34 fixed nozzle 38 cathode portion 42 cylinder 46 rotary motor 50 substrate carrying out inlet 54 up and down motor 58 support shaft 62 cylinder 66 electroplating liquid recovery nozzle 70 support arm 74 pushing piece 78 coil spring 82 support plate la conductive Layer 3 Contact hole 5 Barrier layer 7 Seed layer 12 Plating unit 16 Plating bath 20 Substrate processing section 24 Rotary shaft 28 Electrode section 32 Pre-coating / recovering arm 36 Substrate holding section 40 Cover body 44 Cylinder 48 Conveyor belt 52 Base plate 56 rotation Motor 60 rotary actuator 64 pre-coating nozzle 68 platform 72 positioning plate 7 6 claw portion 80 pressing rod 84 pillar -------------------- order-- ------- ^^^ 1 · (Please read the first Please fill in this page again for the matters needing attention) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 26 312144 1221862 A7 ---------- B7_____ Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Fifth, the description of the invention (27) 86 frame 88 cathode 90 seal material 92 ball bearing 94 housing 9 6 support frame 96a protrusion 9 9 anode 98a key liquid supply port (plating solution injection hole) 98b through hole 98c additive injection hole 100 suction chamber 102 plating solution supply pipe 104 plating solution introduction pipe 104a plating solution introduction path 104b plating solution introduction port 105 additive introduction pipe 10 5a additive introduction path 105b additive introduction port 106 plating solution discharge pipe 110 plating solution immersion Material 1 10a slit 110b protrusion 110c conical surface 112 fixed bolt 112a head 112 b fishing hook portion 112c spire portion 114 plate spring 116 brake rod 120 electric liquid column 120 coil spring 122 adhesive 210 electroplating liquid 212 Plating tank 214 Anode plate 214a Central hole 216 Receiving portion 218 Flange-shaped sealing material 220 Contact point 222 High resistance structure 224 Porous ceramic plate 224a Through hole 226 Plating power supply 230 Mounting table 232 Retainer 234 flange-shaped sealing material This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 27 312144 -------------------- Order — \ Please read the notes on the back before filling this page) Φ. 1221862 A7 B7 — I — -------- Order --I ------ ^^^ 1 _ (Please read the back first Please fill in this page before printing) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (28) 2 3 6 contact 240 high resistance structure 244 first plating chamber 250 plating tank 254 cover 258 contact 260b Diaphragm 262b mesh 266 electrolyte chamber 270 plating solution 274 high resistance plating solution 278 oxygen 3 3 2 holding member 336 contact 339 fine hole 341 plating solution introduction tube 342a porous substance (porous ceramic) 350a insulating member 3 51 insulating type Component holder 360a Sealing member portion 365 Opening 367 Through hole 370 Plating solution 410 Plating solution 238 Anode plate 242 Porous ceramic plate 246 Second plating chamber 252 Anode plate 256 Flange seal 260a Separator 262a Mesh 264 Plating chamber 268 High-resistance electrolyte chamber 272 electrolyte (plating solution) 276 high-resistance structure 330 substrate mounting base 334 flange-shaped sealing material 338 anode plate 340 high-resistance structure 342 porous ceramic plate (porous substance) 350 insulating member 350b insulating member 3 6 0 sealing member 360b insulating member portion 366 holes 368 high-resistance electrolyte chamber 376 high-resistance structure 430 substrate Set the paper size to the Chinese National Standard (CNS) A4 size (210 X 297 mm) 28 312144 1221862 A7 ___ B7 432 holding member 434 flange-shaped sealing material 436 contact 438 anode plate (electrode) 439 electrolyte introduction hole ( Electroplating solution introduction (through hole) 440 porous body 440a (upper) porous body 440b (lower) porous body 441 electroplating liquid introduction tube 445 tube body 447 tube body 450 liquid storage portion 455 plating liquid supply portion 457 electrolyte passage portion 459 Liquid path section 461 Main path 600 Plating solution 602 Plating tank 604 Substrate holding section 6 0 6 Anode plate 608 Plating solution spraying tube 61 〇Plating solution storage section 612 Plating power A Substrate receiving position B Plating position B Bubble C Pre-processing and cleaning position Cl, C2 pore structure M plating Q plating solution R liquid column S conductive layer W substrate [detailed description of the preferred embodiment]-I — — — — — — I— --- I I-- X Please read the notes on the back before filling out this page) 5. Explanation of the invention (29) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The following describes the embodiment of the present invention with reference to the drawings. The substrate plating apparatus of this embodiment is used when a surface of a semiconductor substrate is subjected to electrolytic copper plating to obtain a semiconductor device having a wiring formed of a copper layer. This plating step is described below with reference to FIGS. 1A to 1C. As shown in FIG. 1A, silicon dioxide (Si0) is deposited on the conductive layer 1a on the semiconductor substrate 1 on which the semiconductor element is formed in the semiconductor substrate W. This paper is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 29 312144 1221862 A7 ------- B7 _ V. Insulation film 2 composed of the description of invention (3G), and formed using lithography and etching technology (Π thography 61; 〇11 丨 11 £) A contact layer 3 and a trench 4 for wiring are formed thereon with a barrier layer made of titanium nitride (TiN) or the like, and a seed layer 7 is formed on the barrier layer 5 as an electrolytic plating Power supply layer. Next, as shown in FIG. 1β, copper plating is performed on the surface of the semiconductor substrate W to fill copper in the contact holes 3 and the grooves 4 of the semiconductor substrate 1, and a steel layer 6 is deposited on the insulating film 2. Then, the steel layer 6 on the insulating film 2 is removed by chemical mechanical polishing (CMP), so that the surface of the copper layer 6 filled in the contact hole 3 and the wiring trench 4 is formed on the same plane as the surface of the insulating film 2. Thereby, as shown in FIG. 1C, a wiring composed of the copper layer 6 can be formed. FIG. 2 is a plan view of the entire substrate plating apparatus according to the embodiment of the present invention. As shown in FIG. 2, the plating apparatus is provided in the same equipment. Two plating units 12 for the plating process and its subsidiary processes, a transfer robot 14 that transports the substrate W between the loading and unloading unit 10 and the plating unit 12, and a plating solution supply device 18 having a key liquid tank 16. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as shown in FIG. 3, the aforementioned plating unit 12 is provided with a substrate processing unit 20 for performing plating processing and ancillary processing, and is disposed adjacent to the substrate processing unit 20 to A plating solution tray 22 storing a plating solution. In addition, an electrode arm portion 30 is provided, which is held at the front end of a swing arm 26 that swings about the rotation shaft 24 as a center and has an electrode portion 28 that swings between the substrate processing portion 20 and the plating solution tray 22. In addition, a pre-coating / recovering arm 32 is disposed on the side of the substrate processing section 20, and pure water or ion water is sprayed onto the substrate. ) 21 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 2
藥液,甚或氣體等之固定噴嘴34。在本實施形態係具有三 個固定喷嘴34,且其中一個係用來供給純水。 五、發明說明(31 ) 如第4圖及第5圖所示,前述基板處理部2〇中設有: 使電鍍面向上而保持基板w的基板保持部36、以及圍繞在 該基板保持部36之周緣部而配置於該基板保持部%上方 的陰極部38。此外,配置有圍繞在基板保持部36周圍而 用以防止處理中所用的各種藥液飛散的大致圓筒狀有底蓋 體40 (cup),而該蓋體40可透過氣缸42上下自由動作。 在此,前述基板保持部36係利用氣缸44而在下方之 基板授艾位置A、上方之電鑛位置b、以及這些中間的前處 理•清洗位置c之間升降,且係透過旋轉式電動機46及輸 送帶48,以任意之加速度及速度與前述陰極部38 一體旋 轉而構成。相對向於該基板授受位置A,在電鍍單元12之 框架側面的運送機器人14側係如第7圖所示,設有基板搬 出搬入口 50,而在基板保持部36上升至電鍍位置8時., 陰極部38之密封材90與陰極電極88會抵接於基板保持部 36所保持的基板W之周緣部。另一方面,前述蓋體4〇係 使其上端位於前述基板搬出搬入口 5〇下方,且於第&圖中 係如假想線所示’上升時會蓋住前述基板搬出搬入口 5〇, 而到達陰極部38上方。 前述電鑛液托盤22在未進行電鍍時係利用電鍍液來 濕潤電極臂部30之下述電鍍液浸潰材11〇及陽極,且 如第6圖所示’係設定成可收容該電鍍液浸潰材11()之大 小’並具有未圖示之電鍍液供給口及電鍍液排水口。此外, --------^--------- ·(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公愛) 31 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(32 於電鍍液托盤22安裝有光感測器,可用來進行電鍍液托盤 22内之電鍍液之滿水狀況,亦即溢出及排水的檢測。電鍍 液托盤22之底板52可以裝卸,於電鍍液托盤之周邊則設 置有未圖示之局部排氣口。 前述電極臂部30係如第8圖及第9圖所示,透.過上下 動作電動機54及未圖示之球形螺綠而上下動作,並透過旋 轉電動機56而在前述電鍍液牦盤22與基板處理部2〇之間 旋轉(搖動)。 另外,預塗•回收臂32係如第1〇圖所示,連結於朝 上下方向延伸之支持軸58上端,並透過旋轉致動器6〇而 旋轉(搖動),且透過氣缸62(參照第7圖)而上下動作。該 預塗,回收臂32係於其自由端側保持著預塗液排出用預塗 喷嘴64,於基端側則保持著電鍍液回收用電鍍液回收喷嘴 66而預塗喷嘴64係連接於例如以氣缸驅動之注射器,以 使預塗液閒歇地從預塗喷嘴64喷出,而電鍍液回收喷嘴 66係連接於例如圓筒狀泵或抽風機,以從電鍍液回收喷嘴 66吸引基板上的電鑛液。 前述基板保持部36係如第11圖至第13圖所示,具有 圓板狀平台68,在沿著該平台68周緣部之圓周方向的六 個部位立設有支架7〇,以將基板W水平地載置並保持於平 台68上面。該支架7〇之其中一個的上端固定有抵接於基 板W端面以進行定位之定位板72,在固定有該定位板a 之支架70所相對向的支架7〇上端,則有推壓片74支持成 可自由轉動,該推壓片74係抵接於基板ff之端面而轉動, Γ紙張尺度適用中國國家標準(CNS)A4規格⑽χ 297公爱) 32 η ---------I I --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1221862 A7 "---*--— B7____ 五、發明說明(33 ) ~— "" 並將基板W推壓於定位板72側。而其他四個支架7〇上端 有扣爪部76支持成可自由轉動,該扣爪部76會轉動並從 基板W上方往下方推壓。 〇在此,前述推壓片74及扣爪部76之下端係介由線圈 彈簧78連結於朝下方按壓之按壓棒8〇上方,隨著該按壓 棒80往下方動作,推壓片74及扣爪部76會朝内側轉動而 關閉,於平台68下方則配置有抵接於前述按壓棒8〇下面, 而將按壓棒80上方朝推起之支持板82。 藉此’當基板保持部36位於第5圖所示之基板授受位 置A時’按壓棒8〇會抵接於支持板82而朝上方推起,並 且當推壓片74及扣爪部76朝外側轉動而開啟,使平台68 上升時,按壓棒80會因為線圈彈簧78之彈力而下降,使 推壓片74及扣爪部76朝内側旋轉而關閉。 前述陰極部38係如第14圖及第15圖所示,具有:固 定在前述支持板82(參照第5圖及第13圖等)周緣部上所 立5又的支柱84上端之環狀框體86、朝内側突出而安裝於 該框體86下面而在該例中被分割成六個部分之陰極88、 以及安裝於前述框體86上面,以覆蓋該陰極88上方之環 狀密封材90。該密封材90係使其内周緣部朝内側向下方 傾斜,並且使内周端部越來越薄地朝下方垂下而構成。 藉此,如第5圖所示,當基板保持部36上升至電鍍位 置B時’陰極88會推壓於該基板保持部36所保持的基板 W之周緣部並且對其通電,同時密封材90之内周端部會壓 接於基板W之周緣部上面,並將此處密封成不透水狀態, 11 A__w^ · I------til! — ΐ請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 33 312144 oz 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明(34 ) 以防止供給於基板上( φ ^ ^ I被冤鍍面)之電鍍液從基板之端 部滲出,同時防止電鍍液污染陰極88。 狀錤盘其二實施形態中’陰極部38係以無法上下動作的 1 嶋板保持部36 -體旋轉,然而亦可以可自由上下動 式構乂成於下降時使密封材Μ壓接於基板k被電鑛面的方 一前述電極|部3〇之電極部別係如第16圖至第2〇圖 八具有涇由球形軸承92連結於搖動臂部26之自由端 的外殼94、圍繞在該外殼94之周圍的中空支持框96、以 及利用則述外殼94及支持框96挾持並固定周緣部之陽極 該陽極98係覆蓋前述外殼94之開口部,並於外殼 之内部形成有吸引室100。該吸引室1〇〇之内部則有連接 於從電鍍液供給設備i 8(參照第2圖)延伸之電鍍液供給管 102且朝直徑方向延伸之電鍍液導入管1〇4抵接,配置於 陽極98上面,再者,於外殼94連接有連通於吸引室1〇〇 之電鍍液排出管1〇6。 前述電鍍液導入管104若為歧管構造,則對於被電鍍 面均一地供給電鍍液非常有效。亦即,設有連續於該長邊 方向而延伸之電鍍液導入路徑1〇4a及以沿著該導入路名 l〇4a之預定間隔,連通於下方之複數電鍍液導入口 i〇4b, 而在陽極98對應於該電鍍液導入口 i〇4b之位置上,設肩 電鍍液供給口 98a。再者,於陽極98設有遍及該全面,j 上下連通之多數貫穿孔98b。藉此,從電鍍液供給管1〇: 導入於電鍍液導入管104之電鍍液會從電鍍液導入口 1〇41 --------訂---------. ·(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 34 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(35 ) 及電鍍液供給口 98a到達陽極98下方,並且以陽極98浸 泡於電鍍液中之狀態吸引電鍍液排出管丨〇6,則陽極98下 方之電鍍液可由貫穿孔98b通過吸引室1〇〇,而從該電链 液排出管106排出。A fixed nozzle 34 for a chemical liquid or even a gas. In this embodiment, there are three fixed nozzles 34, and one of them is used to supply pure water. V. Description of the Invention (31) As shown in FIGS. 4 and 5, the substrate processing unit 20 is provided with a substrate holding portion 36 that holds the substrate w with the plating surface facing upward, and surrounds the substrate holding portion 36. The peripheral edge portion is disposed on the cathode portion 38 above the substrate holding portion%. In addition, a substantially cylindrical bottomed cover 40 (cup) surrounding the substrate holding portion 36 to prevent scattering of various chemicals used in the process is disposed, and the cover 40 can move freely up and down through the air cylinder 42. Here, the substrate holding portion 36 is lifted and lowered by the cylinder 44 between the substrate awarding position A below, the power-storage position b above, and the intermediate pre-processing and cleaning positions c, and is transmitted through the rotary motor 46. The conveyor belt 48 is configured to rotate integrally with the cathode portion 38 at an arbitrary acceleration and speed. Relative to the substrate receiving and receiving position A, the side of the transport robot 14 on the side of the frame of the plating unit 12 is provided with a substrate carrying-out port 50 as shown in FIG. 7, and when the substrate holding portion 36 is raised to the plating position 8. The sealing material 90 and the cathode electrode 88 of the cathode portion 38 are in contact with the peripheral edge portion of the substrate W held by the substrate holding portion 36. On the other hand, the cover 40 is such that its upper end is located below the substrate carrying-out port 50, and in the & figure, as shown by the imaginary line, the substrate carrying-out port 50 is covered when it is raised, Then, it reaches above the cathode portion 38. When the electro-mineral liquid tray 22 is not electroplated, the electroplating solution is used to wet the electroplating solution impregnating material 11 and the anode of the electrode arm portion 30 described below, and as shown in FIG. 6, it is set to accommodate the electroplating solution. The size of the impregnated material 11 () is provided with a plating solution supply port and a plating solution drainage port (not shown). In addition, -------- ^ --------- · (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 Public love) 31 312144 1221862 Printed A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (32 A light sensor is installed on the plating solution tray 22, which can be used to fill the plating solution in the plating solution tray 22 with water. That is, the detection of overflow and drainage. The bottom plate 52 of the plating solution tray 22 can be attached and detached, and a local exhaust port (not shown) is provided around the plating solution tray. The aforementioned electrode arm portion 30 is as shown in FIG. 8 and FIG. 9 As shown in the figure, the motor moves up and down through the up-and-down motion motor 54 and a ball screw green (not shown), and rotates (shakes) between the electroplating bath pan 22 and the substrate processing unit 20 through a rotating motor 56. As shown in FIG. 10, the pre-coating / recovering arm 32 is connected to the upper end of the support shaft 58 extending in the up-and-down direction, and is rotated (swayed) by the rotary actuator 60, and passes through the air cylinder 62 (see FIG. 7). (Figure) and up and down. The pre-coating, recovery arm 32 is tied to its free A precoat nozzle 64 for precoat liquid discharge is held on the end side, and a plating liquid recovery nozzle 66 for plating liquid recovery is held on the base end side. The precoat nozzle 64 is connected to, for example, a cylinder driven syringe to make the precoat liquid. It is ejected from the pre-coating nozzle 64 at rest, and the plating solution recovery nozzle 66 is connected to, for example, a cylindrical pump or a suction fan to attract the electro-mineral liquid on the substrate from the plating solution recovery nozzle 66. The aforementioned substrate holding portion 36 is As shown in FIGS. 11 to 13, a circular plate-shaped platform 68 is provided, and brackets 70 are erected at six locations along the circumferential direction of the peripheral edge portion of the platform 68 to place and hold the substrate W horizontally. On the platform 68. The upper end of one of the brackets 70 is fixed with a positioning plate 72 contacting the end surface of the substrate W for positioning, and at the upper end of the bracket 70 opposite to the bracket 70 to which the positioning plate a is fixed, A pressing piece 74 is supported for free rotation. The pressing piece 74 is abutted against the end face of the substrate ff and rotates. Γ The paper size applies the Chinese National Standard (CNS) A4 specification ⑽χ 297 public love) 32 η ---- ----- II -------- Order --------- (Please read the notes on the back first Please fill out this page again) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 A7 " --- * --- B7____ V. Description of the invention (33) ~ — " " And push the substrate W on the positioning plate 72 sides. The other four brackets 70 are supported by a claw portion 76 on the upper end so as to be freely rotatable. The claw portion 76 is rotated and pushed downward from above the substrate W. 〇Here, the lower end of the pressing piece 74 and the claw portion 76 are connected to the pressing rod 80 which is pressed downward through a coil spring 78. As the pressing rod 80 moves downward, the pressing piece 74 and the clasp are pushed downward. The claw portion 76 is turned inward and closed, and a support plate 82 is arranged below the platform 68 to abut the lower surface of the pressing rod 80 and push the upper portion of the pressing rod 80 upward. Thereby, when the substrate holding portion 36 is located at the substrate receiving / receiving position A shown in FIG. 5, the pressing rod 80 will abut against the support plate 82 and be pushed upward, and when the pressing piece 74 and the claw portion 76 face When the platform 68 is lifted by turning the outside, the pressing bar 80 is lowered by the elastic force of the coil spring 78, and the pressing piece 74 and the claw portion 76 are turned inward and closed. As shown in FIGS. 14 and 15, the cathode portion 38 is a ring frame having an upper end of a pillar 84 fixed to a peripheral portion of the support plate 82 (see FIGS. 5 and 13, etc.). A body 86, a cathode 88 that protrudes toward the inside and is mounted below the frame 86 and is divided into six parts in this example, and a ring-shaped sealing material 90 that is mounted on the frame 86 to cover the cathode 88 . The sealing material 90 is configured such that the inner peripheral edge portion thereof is inclined downward inward and the inner peripheral end portion is made thinner and lower downward. As a result, as shown in FIG. 5, when the substrate holding portion 36 is raised to the plating position B, the cathode 88 is pressed against the peripheral portion of the substrate W held by the substrate holding portion 36 and is energized, and the sealing material 90 is simultaneously applied. The inner peripheral end will be crimped to the upper edge of the substrate W, and it will be sealed in a watertight state here. 11 A__w ^ · I ------ til! — Ϊ́Please read the precautions on the back before filling (This page) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 33 312144 oz. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. B7. φ ^ ^ I was plated), the plating solution leaked from the end of the substrate, while preventing the plating solution from contaminating the cathode 88. In the second embodiment of the shape disk, the 'cathode portion 38 is rotated by a 1-plate holding portion 36 which cannot move up and down, but it can also be freely moved up and down so that the sealing material M is crimped to the substrate when it is lowered. The electrode section of the aforementioned electrode | section 30 of the electric mine surface is as shown in Fig. 16 to Fig. 8. There is a casing 94 connected to the free end of the swing arm section 26 by a ball bearing 92, and is surrounded by this. A hollow support frame 96 around the casing 94 and an anode at the periphery are held and fixed by the casing 94 and the support frame 96. The anode 98 covers the opening of the casing 94, and a suction chamber 100 is formed inside the casing. Inside the suction chamber 100, a plating solution supply pipe 102 extending from the plating solution supply device i 8 (see FIG. 2) and a plating solution introduction pipe 104 extending in a diameter direction are in contact with each other, and are arranged in Above the anode 98, a plating solution discharge pipe 106 connected to the suction chamber 100 is connected to the casing 94. If the plating solution introduction pipe 104 has a manifold structure, it is very effective for uniformly supplying the plating solution to the surface to be plated. That is, a plating solution introduction path 104a extending continuously in the long-side direction is provided, and a plurality of plating solution introduction ports i04b are communicated at a predetermined interval along the introduction path name 104a, and A shoulder plating solution supply port 98a is provided at a position of the anode 98 corresponding to the plating solution introduction port 104b. Further, the anode 98 is provided with a plurality of through-holes 98b throughout the entire surface, and j communicates up and down. As a result, the plating solution introduced from the plating solution supply tube 10: the plating solution introduced into the plating solution introduction tube 104 will pass from the plating solution introduction port 1041 -------- order ---------. · (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 34 312144 1221862 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7. (35) and the plating solution supply port 98a reach below the anode 98, and attract the plating solution discharge pipe with the anode 98 immersed in the plating solution, the plating solution below the anode 98 can pass through the suction hole 98b through the suction chamber 1o. 〇, and discharged from the electric chain liquid discharge pipe 106.
在此’前述陽極98為了抑制殘渣(siime)的產生,係 由含有磷的銅(含磷鋼)所構成,而磷之含量為〇· 〇3至 0.05%。如上述於陽極98使用含攝銅時,隨著電錢的進行, 在陽極98之表面會形成所謂的黑膜(black f illD)。該黑膜 係包含磷及氯(Cl)之Cu+複合體,且係由Cu2Cl2.Cu20*Cu P 3 *· 等所構成。由於該黑膜的形成可抑制銅的不均化反應,因 此為使電鍍穩定化,於陽極98表面穩定地形成黑膜是非常 重要的,然而當黑膜乾燥或氧化而從陽極98脫落時,會成 為產生顆粒的原因。 因此,在該實施形態係於陽極98下面安裝用以覆蓋該 陽極98全面,且由保水性材料所構成的電鍍液浸潰材 110,並於該電鍍液浸潰材110含有電鍍液,以濕潤陽極 98之表面,藉此來防止黑膜因為基板之被電鍍面乾燥而脫 落及氧化,同時在注入電鍍液於基板之電鍍面與陽極98 之間時,易於將空氣排出至外部。 該電鑛液浸潰材110具有保水性及透過性,且耐藥性 佳。對於含有高濃度硫酸的酸性電鍍液尤其具有耐久性, 而且係以例如聚丙烯製之纖維而成的織布所構成,以使硫 酸溶液中雜質的溶解不會對電鍍性能(成膜速度、電阻率、 圖案埋入性)造成不良影響。此外,電鍍液浸潰材110之材 ---------------訂--------- ί請先閱讀背面之注意事項再填寫本頁>Here, the aforementioned anode 98 is composed of copper (phosphorus-containing steel) containing phosphorus in order to suppress the generation of residues, and the content of phosphorus is from 0.03 to 0.05%. When copper-containing copper is used for the anode 98 as described above, as the electricity progresses, a so-called black film (black film) is formed on the surface of the anode 98. The black film is a Cu + complex of phosphorus and chlorine (Cl), and is made of Cu2Cl2.Cu20 * Cu P 3 * ·. The formation of this black film can suppress the heterogeneous reaction of copper. Therefore, in order to stabilize the electroplating, it is very important to form a black film stably on the surface of the anode 98. However, when the black film dries or oxidizes and detaches from the anode 98, Will be the cause of particles. Therefore, in this embodiment, a plating solution impregnating material 110 composed of a water-retaining material is installed under the anode 98 to cover the entire surface of the anode 98, and the plating solution impregnating material 110 contains a plating solution to wet The surface of the anode 98 is used to prevent the black film from falling off and oxidized due to the drying of the plated surface of the substrate. At the same time, when the plating solution is injected between the plated surface of the substrate and the anode 98, air is easily discharged to the outside. The electric mineral liquid impregnating material 110 has water retention and permeability, and is excellent in chemical resistance. It is especially durable for acid plating solution containing high concentration of sulfuric acid, and it is made of woven fabric made of fibers such as polypropylene, so that the dissolution of impurities in the sulfuric acid solution will not affect the plating performance (film formation speed, resistance Rate, pattern embedding). In addition, the material of electroplating bath impregnated material 110 ---- Order --------- ίPlease read the precautions on the back before filling in this page >
1221862 五、發明說明(36 ) 料除了聚丙烯之外,可合丨i ^ 片 Η舉聚乙烯、聚酯、聚氣乙烯、特 氟隆、聚乙婦醇、平备獻 Λ氣自日及這些之衍生物,且亦可以不鐵 一請先閲讀背面之注意事項再填寫本頁) 布或海綿狀之結構體代#嫉 代营織布。此外,由鋁或Sic構成的 多孔陶瓷、燒結聚丙烯等也很有效。 一亦即,將在下端具有頭部之多數固定插銷112,以該 頭邛無法向上方脫離的方式收容於電鍍液浸潰材内 P並使轴邛貫穿陽極98之内部而配置,並且經由u字狀 板簧114朝上方彈壓该固定插銷112,以使電鍍液浸潰材 110透過板簧114之彈力密接並安裝於陽極98下面。藉由 如上述構成,隨著電鍍之進行,即使陽極98越來越厚,也 可使電鍍液浸潰材110確實密接於陽極98下面。因此,得 以防止起因於陽極98下面與電鍍液浸潰材i丨〇之間混入空 氣而造成電錢不良。 經濟部智慧財產局員工消費合作社印製 此外’亦可使例如直徑為2mm左右的圓柱狀pvc(氣乙 稀)或PET製之插銷’從陽極之上面側貫穿陽極而配置,並 於出現在%極下面之該插銷的前端面塗上接著劑,以與電 鍍液浸潰材粘著固定。浸潰材如多孔陶瓷具有充分剛性之 情況下,並不需要用以固定浸潰材之插銷等,僅於浸潰材 上載置陽極即可。 而前述電極部28係當基板保持部36位於電鍍位置 B (參照第5圖)時,使基板保持部3 6所保持之基板W與電 鍍液浸潰材11 0之間隙下降至成為例如〇 · 5至3mm左右, 並於此狀態下,從電鍍液供給管102供給電鍍液,而在電 鍍液浸潰材110含有電鍍液,同時於基板W上面(被電鍍面) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 36 312144 1221862 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 五、發明說明(37 ) 與陽極98之間填滿電鍍液,藉此於基板w之被電鍍面進行 電鍍。 此時,如第21圖所示,在陽極98之大致對應於電鍍 液注入孔98a之位置,使電鍍液從電鍍液浸潰材11〇下面 到達基板W之上面(被電鍍面),藉此可形成交聯電.鍍液浸 潰材110與基板W之被電鍍面的電鍍液柱12〇。然後持續 供給電鍍液,則該電鍍液柱i 2〇會緩緩成長,或在相互連 結之後,如第22圖所示,朝直交於電鍍液導入管1〇4之方 向行進’以產生擴展至基板W之被電鑛面全面的電鑛液Q 的液流。 藉此’氣泡B會隨著該電鍍液Q之液流被推出至外部, 而且該電鍍液Q之液流前線Qi會形成大致直線狀,所以電 鍍液Q不致包住空氣。因此,可防止氣泡殘留在電鍍液浸 潰材110與基板W之被電鍍面之間所充滿的電鍍液中。 此外,如第4圖所示,於用以支持陰極部38之支柱84 的外侧立設有制動棒116,並且使設在支持框96周圍的突 出部96a抵接於該制動棒116上面,以限制電極部28之下 降。 繼之,說明前述實施形態之電鍍裝置之動作。 首先,利用搬送機器人14從裝卸部1()取出電鑛處理 前之基板W,並以被電鑛面朝向上方的狀態,從設在框架 側面之基板搬出搬人σ 5Q搬送至另—方之電鑛單元Μ内 部。此時’基板保持部36係位在下方之基板授受位置A, 而在搬送機器人14之手臂到達平a τ l 士从 ^J運十σ 68正上方後,使手臂 ΐ紙張尺度適財國國家標準(CNS)A4規格( - __ 幻 57 312144 •丨—丨丨—丨丨丨丨丨•丨丨丨丨丨丨·丨丨丨i丨丨丨 請先閱讀背面之注意事項再填寫本頁) 1221862 A71221862 V. Description of the invention (36) In addition to polypropylene, it can be combined with polyethylene, polyester, polyethylene, Teflon, polyethenol, and acetone. These derivatives can also be made without iron. Please read the notes on the back before filling in this page.) Cloth or sponge-like structure. In addition, porous ceramics made of aluminum or Sic, sintered polypropylene, etc. are also effective. That is, a plurality of fixed pins 112 having a head at the lower end are housed in a plating solution impregnating material P such that the head can not be detached upward, and the shaft is disposed through the anode 98, and is arranged via u The plate-shaped leaf spring 114 presses the fixing pin 112 upward, so that the plating solution impregnating material 110 is tightly connected through the elastic force of the plate spring 114 and is installed under the anode 98. With the above-mentioned structure, even if the anode 98 becomes thicker and thicker as the plating progresses, the plating solution impregnating material 110 can be surely brought into close contact with the anode 98. Therefore, it is possible to prevent the electric money from being caused by the air mixed between the lower surface of the anode 98 and the plating solution impregnating material i 丨 〇. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy The front end surface of the pin below the pole is coated with an adhesive to adhere and fix the plating solution impregnated material. In the case where the impregnated material such as porous ceramic has sufficient rigidity, it is not necessary to fix the bolt and the like of the impregnated material, and only the anode is placed on the impregnated material. On the other hand, when the substrate holding portion 36 is located at the plating position B (refer to FIG. 5), the gap between the substrate W held by the substrate holding portion 36 and the plating solution impregnating material 110 is reduced to, for example, 0 · 5 to 3 mm, and in this state, the plating solution is supplied from the plating solution supply pipe 102, and the plating solution impregnating material 110 contains the plating solution, and at the same time on the substrate W (the surface to be plated) (CNS) A4 specification (210 X 297 mm) 36 312144 1221862 Printed by A7, Employees ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (37) and the anode 98 are filled with a plating solution, so as to cover the substrate w The plating surface is plated. At this time, as shown in FIG. 21, at the position of the anode 98 substantially corresponding to the plating solution injection hole 98a, the plating solution is brought from the bottom of the plating solution impregnating material 11 to the top of the substrate W (the surface to be plated), A cross-linked electroplating solution impregnating material 110 and a plating solution column 12 on the plated surface of the substrate W can be formed. Then continue to supply the plating solution, then the plating solution column i 20 will slowly grow, or after being connected to each other, as shown in FIG. 22, proceed toward the direction orthogonal to the plating solution introduction tube 104 to generate expansion to The full flow of the electric ore liquid Q on the substrate W of the electric ore surface. Thereby, the bubble B is pushed out to the outside along with the flow of the plating solution Q, and the front line Qi of the flow of the plating solution Q is formed into a substantially straight line, so the plating solution Q does not enclose air. Therefore, bubbles can be prevented from remaining in the plating solution filled between the plating solution impregnating material 110 and the plated surface of the substrate W. In addition, as shown in FIG. 4, a brake rod 116 is erected on the outside of the pillar 84 for supporting the cathode portion 38, and a protruding portion 96 a provided around the support frame 96 abuts on the brake rod 116 to The lowering of the electrode portion 28 is restricted. Next, the operation of the plating apparatus according to the foregoing embodiment will be described. First, the transfer robot 14 is used to remove the substrate W before the electric mining process from the loading and unloading unit 1 (), and with the electric mining surface facing upward, it is moved out from the substrate provided on the side of the frame. Inside the power unit M. At this time, the 'substrate holding portion 36 is located at the lower substrate receiving and receiving position A, and after the arm of the transport robot 14 reaches the level a τ l from ^ J to ten σ 68, the arm ΐ paper size is suitable for the country of wealth. Standard (CNS) A4 Specification (-__ 幻 57 312144 • 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 i 丨 丨 Please read the precautions on the back before filling this page) 1221862 A7
BY 五、發明說明(38 ) 降以將基板載置於支架7〇上。然後,使搬送機器人 14之手臂通過前述基板搬出搬入口 5Q而退去。 在搬送機器人14之手臂完全退去之後,使蓋體4〇上 升同時使位於基板授受位置A之基板保持部36上升至前 處理•清洗位置C。此時,隨著該上升之動作,載置於支 架70上的基板係以定位板72及推壓片^定位,並且以扣 爪部76確實地把持。 另一方面,電極臂部30之電極部28在該時點係位於 電鍍液托:t 22上的平常位置,並且使電㈣浸潰材11〇 或陽極98位於電鍍液托盤22内,而在該狀態下與蓋體4〇 上升之同時,開始對電鍍液托盤22及電極部“供給電鍍 液然後,在進入基板之電鍍步驟前,供給新的電鍍液, 同時進行通過電鍍液排出管1〇6之吸引,以進行電鍍液浸 潰材110所包含的電鍍液之交換及排出氣泡。此外,當蓋 體40上升70 了時,框架側面之基板搬出搬入口 50係由蓋 體40蓋住而封閉,使框架内外之氣體形成遮斷狀態。 當蓋體40上升時,會進入預塗處理。亦即,使接收到 基板W之基板保持部36旋轉,並使位在迴避位置之預塗· 回收# 32移動至與基板相對之位置。然後,在基板保持部 36之旋轉速度到達設定值時,使例如介面活性劑構成的預 塗液從設在預塗·回收臂32前端之預塗噴嘴64間歇性地 排出至基板之被電鍍面。此時,由於基板保持部%正在旋 轉,因此預塗液會擴散至基板^之整個被電鍍面。繼之, 使預塗•回收臂32回到迴避位置,並增加基板保持部% 312144BY V. Description of the invention (38) The substrate is placed on the bracket 70. Then, the arm of the transfer robot 14 is retracted through the substrate carrying-out port 5Q. After the arm of the transfer robot 14 is completely retracted, the lid body 40 is raised and the substrate holding portion 36 at the substrate receiving and receiving position A is raised to the pre-processing / cleaning position C. At this time, in accordance with the upward movement, the substrate placed on the holder 70 is positioned by the positioning plate 72 and the pressing piece ^, and is securely held by the claw portion 76. On the other hand, the electrode portion 28 of the electrode arm portion 30 is located at the usual position on the plating solution holder: t 22 at this time, and the electro-impregnating material 11 or the anode 98 is positioned in the plating solution tray 22, and at this point At the same time as the lid body 40 rises, "supply the plating solution to the plating solution tray 22 and the electrode part. Then, before entering the plating process of the substrate, supply a new plating solution and simultaneously pass through the plating solution discharge pipe 106. The suction is performed to exchange the plating solution contained in the plating solution impregnating material 110 and to discharge air bubbles. In addition, when the cover 40 is raised 70, the substrate carrying-out port 50 on the side of the frame is covered and closed by the cover 40 When the cover 40 rises, it will enter a pre-coating process. That is, the substrate holding portion 36 that has received the substrate W is rotated, and the pre-coating and recovery at the avoiding position are performed. # 32 is moved to a position opposite to the substrate. Then, when the rotation speed of the substrate holding portion 36 reaches a set value, a pre-coating liquid made of, for example, a surface active agent is removed from a pre-coating nozzle 64 provided at the front end of the pre-coating / recovering arm 32. Intermittently Out to the plated surface of the substrate. At this time, since the substrate holding portion is rotating, the pre-coating liquid will spread to the entire plated surface of the substrate ^. Then, the pre-coating / recovering arm 32 is returned to the avoiding position, and Increase substrate holding portion% 312144
I 本紙張尺度過用?國國家標準(CNS_)A4規格(21G χ 297公楚 1221862 A7 五、發明說明(39 ) 之旋轉速度’再利用離心力甩開基板被電 並使之乾燥。 <頂塗液 預塗完成後進人電鍍處理。首先,使基板保持部 停止該旋轉,或是你& ^ 下,上升至進—雷赫 降低至電鍛時逮度的狀態 灯電鍍之電鍍位置B。如此-來,基板?之 拳 周緣部會接觸於陰極88而成為可通電之狀態,_使_ 材90麼接於基板w之周緣 rj緣〇卩上面,而使基板之周 液密狀態密封。 Π 另方面,依據所搬入之基板W完成預塗處理時之信 號,朝水平方向旋轉電極臂部3〇,以使電極部Μ從電鑛 液托盤22上方移至進行電鍍之位置上方,並於到達該位置 後’使電極部28面向陰極部38而下降。此時,電鍍液浸 潰材110不會接觸基板w之被電鑛面,而係位在接近❹· 5扭扭 至3關左右之位置。在電極部28之下降完了時,投入電鍍 電流,並將電鍍液從電鍍液供給管1〇2供給電極部Μ内 部,從貫穿陽極98之電鍍液注入孔98a供給電鍍液至電鍍 液浸潰材110。 經濟部智慧財產局員工消費合作社印製 如此一來,在陽極98對應於電鍍液注入孔98a之位 置,會形成用以交聯電鍍液浸潰材11〇與基板1之被電鍍 面的電鍍液柱120,且隨著電鍍液之持續供給,電鍍液柱 120會慢慢地成長,在相互連結之後,朝與電鍍液導入管 104垂直之方向行進,以擴散至基板w之整個被電鍵面。 藉此’氣泡會隨著該電鍍液之液流被推出至外部,而且電 鍍液不會包住空氣,所以可防止氣泡殘留在電鍍液浸潰材 39 312144 1221862 A7 B7 五、發明說明(40 ) t請先閱讀背面之注意事項再填寫本頁) 110與基板W之被電鍍面間的電鍍液中。因此,含有從電 鍍液浸潰材11ϋ滲出的銅離子之電鍍液不會殘留氣泡而填 滿電鍍液浸潰材110與基板w被電鍍面之間的間隙,而可 在基板之被電鍍面進行銅電鍍。此時,亦可以低速旋轉基 板保持部36。 此外,在注入該電鍍液時,最好於基板W與陽極98之 間負載固定電壓。藉此,於電鍍液接觸部流動固定密度之 電流,並選擇適當的電壓,可避免基板W之鋼種子層受到 蝕刻。 而且在進行電鍍處理時,亦可從電鍍液注入孔98a供 給電鍍液於電鍍液浸潰材110,以將電鍍液注入電鍍液浸 潰材110與基板W之被電鍍面之間,同時從電鍍液排出管 106吸引並排出電鑛液。藉此,於電鑛處理中,循環並授 拌填滿在基板W與陽極98之間的電鍍液,可抽出電鍍液中 的氣泡。電鍍液之注入/吸引不僅在初期亦可在電鑛期間全 程進行。 經濟部智慧財產局員工消費合作社印製 持續供給電鍍液時,包括從電鍍液浸潰材110滲出的 銅離子之電鍍液會填滿電鍍液浸潰材110與基板W之被電 鍍面間的間隙,而可在基板之被電鍍面進行鋼電鍍。此時, 亦可以低速旋轉基板保持部36。 電鍍處理完成時,使電極臂部30上升並且旋轉,然後 回到電鍍液托盤22上方,再下降至平常位置。繼之,使預 塗·回收臂32從迴避位置移動並下降至與基板w相向之位 置,以由電鍍液回收喷嘴66回收基板W上的電鍍殘留液 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 40 312144 1221862 A7 五、發明說明(41 ) 體。結束該電鑛液殘留液體的回收後,使預塗•回 回到迴避位置,為了清洗基板 臂32 ^ 扳之電鍍面,係從純水用固定 喷嘴以朝基板中央部排出純水, 口疋 36 ^ 同時增加基板保持部 。之逮度並使之㈣’以將基板你表面之電鑛液代換為純 上述般進订基板W之清洗,可防止基板保持部 從電鍍位置Β下降時,因電鍍液濺起而污染陰極部38之陰 極88的情況發生。 a 清洗結束後便進人水洗處理。㈣,使基板保持部%I Used this paper size? National Standard (CNS_) A4 Specification (21G χ 297 Gongchu 1221862 A7 V. Description of the invention (39) The rotation speed 'recycling the substrate with centrifugal force and then drying it. ≪ The top coating liquid is pre-coated before entering Electroplating treatment. First, stop the substrate holding part from rotating, or you & ^, rise to the state where the Rech is lowered to the state during the electroforge. The electroplating position B for electroplating. So-come, the substrate? The peripheral part of the fist will contact the cathode 88 and be able to be energized. _Make_90 is connected to the peripheral edge rj of the substrate w to seal the peripheral part of the substrate in a liquid-tight state. Π On the other hand, depending on the carry-in The signal when the substrate W has completed the pre-coating process, the electrode arm portion 30 is rotated in the horizontal direction so that the electrode portion M is moved from above the electro-mineral liquid tray 22 to a position where plating is performed, and when the position is reached, the electrode is made The portion 28 descends toward the cathode portion 38. At this time, the plating solution impregnating material 110 does not contact the substrate surface of the substrate w, but is positioned at a position close to ❹ · 5 to about 3 levels. In the electrode portion 28 When the drop is completed, the plating current is turned on, The plating solution is supplied from the plating solution supply pipe 102 to the inside of the electrode portion M, and the plating solution is supplied from the plating solution injection hole 98a penetrating the anode 98 to the plating solution impregnating material 110. This is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, at the position of the anode 98 corresponding to the plating solution injection hole 98a, a plating solution column 120 for cross-linking the plating solution impregnating material 11 and the plated surface of the substrate 1 is formed, and as the plating solution is continuously supplied, The plating solution column 120 will slowly grow and, after being connected to each other, travels in a direction perpendicular to the plating solution introduction tube 104 to diffuse to the entire surface of the substrate to be keyed. Thus, the bubbles will follow the plating solution's liquid. The flow is pushed to the outside, and the plating solution does not cover the air, so it can prevent air bubbles from remaining in the plating solution immersion material 39 312144 1221862 A7 B7 V. Description of the invention (40) t Please read the precautions on the back before filling this page ) 110 and the plating solution between the plated surface of the substrate W. Therefore, the plating solution containing copper ions exuding from the plating solution impregnating material 11 can fill the gap between the plating solution impregnating material 110 and the plated surface of the substrate without leaving bubbles, and can be performed on the plated surface of the substrate. Copper plating. In this case, the substrate holding portion 36 may be rotated at a low speed. When the plating solution is injected, a fixed voltage is preferably applied between the substrate W and the anode 98. Thereby, a current of a fixed density flows at the contact portion of the plating solution, and an appropriate voltage is selected to prevent the steel seed layer of the substrate W from being etched. In addition, during the plating process, the plating solution may be supplied from the plating solution injection hole 98a to the plating solution impregnating material 110 to inject the plating solution between the plating solution impregnating material 110 and the plated surface of the substrate W, and at the same time from the plating The liquid discharge pipe 106 sucks and discharges the electric mineral liquid. Thereby, in the electric ore processing, the plating solution filled between the substrate W and the anode 98 is circulated and stirred, and the air bubbles in the plating solution can be extracted. The injection / attraction of the plating solution can be performed not only in the initial stage but also during the power mining. When the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a continuous supply of plating solution, the plating solution including copper ions exuding from the plating solution impregnation material 110 will fill the gap between the plating solution impregnation material 110 and the plated surface of the substrate W , And steel plating can be performed on the plated surface of the substrate. In this case, the substrate holding portion 36 may be rotated at a low speed. When the plating process is completed, the electrode arm portion 30 is raised and rotated, and then returned to the top of the plating solution tray 22 and lowered to the usual position. Next, the pre-coating / recovering arm 32 is moved from the avoidance position and lowered to a position opposite to the substrate w, and the plating residue on the substrate W is recovered by the plating solution recovery nozzle 66. This paper is in accordance with China National Standard (CNS) A4 Specifications (210 X 297 mm) 40 312144 1221862 A7 V. Description of the invention (41) body. After the recovery of the residual liquid of the electric mineral liquid, return the pre-coating to the avoidance position. In order to clean the plating surface of the substrate arm 32, the pure water is discharged from the fixed nozzle for pure water toward the center of the substrate. ^ At the same time increase the substrate holding section. It can be used to clean the substrate W by replacing the electro-mineral fluid on the surface of the substrate with pure substrate cleaning as described above, which can prevent the cathode from being polluted by the plating solution when the substrate holding portion is lowered from the plating position B. The situation of the cathode 88 of the portion 38 occurs. a After the cleaning is finished, it is washed with water. ㈣, make the substrate holding portion%
I ,電鍍位置B下降至前處理•清洗位置c’並由純水用固 疋喷嘴34 —邊供給純水,一邊旋轉基板保持部36及陰極 部38以進行水洗。此時,可利用直接供給陰極部之純 水或從基板ff之面飛散的純水,與基板同時清洗密封材9〇 及陰極88。 着 經濟部智慧財產局員工消費合作社印製 水洗結束後便進入乾燥處理。亦即,停止從固定喷嘴 34供給純水,並增加基板保持部36及陰極部38之旋轉速 度’然後利用離心力甩開基板表面之純水並使之乾燥。同 時亦可使密封材90及陰極88乾燥。乾燥處理結束時,停 止基板保持部36及陰極部38之旋轉,並使基板保持部36 下降至基板授受位置A。如此一來,扣爪部76對於基板W 之把持會解除,而基板W會形成載置於支架70上面之狀 態。與此之同時,蓋體40也會下降。 如上述完成電鍍處理及其附屬之前處理以及清洗•乾 燥處理之所有處理,搬送機器人14會從基板搬出搬入口 50朝基板W下方插入其手臂,並以此狀態使手臂上升,以 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公釐) 41 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(42 從基板保持部36接受處理後之基板w。然後,搬送機器人 14會將從該基板保持部36接收到的處理後之基板w送回 到裝卸部1 〇。 然而,如該實施形態,於陽極下面安裝電鍍液浸潰材 以進行電鍍處理之情況下,有時會有氣泡進入電鍍液浸潰 材11 0中所形成之氣孔内部的情形?這些氣泡有絕緣體之 作用,會成為攪亂電鍍處理時之電流分部的原因。對於該 問題’在進行電鍍處理前先吸引電鍍液排出管1〇6,使配 置有電鍍液浸潰材110之空間減壓,然後再從電鍍液導入 管104將電鍍液導入電鍍液浸潰材11〇係屬有效。藉此, 可促進進入電鍍液浸潰材11〇之氣孔内部的氣泡跑出至外 部’而可藉由均一的電流分布達成高品質之電鍍。再者, 若於電鍍裝置上升時也進行該處理,則由於可除去最初進 入電鍍液浸潰材11 0之氣孔的氣泡,因此非常有效。 根據該實施形態之電鍍裝置,在以基板保持部將基板 朝上方保持的狀態下,可於電鍍處理時前後進行電鍍處理 及電鍍處理所附屬之前處理,以及清洗•乾燥處理等其他 處理。因此,可以單一的裝置進行電鍍之所有處理,而可 謀求裝置之精簡化,同時可廉價地提供佔有面積小的電鑛 裝置。此外以電錄單元而言,由於可搭載於其他半導體製 造裝置’因此在使電锻、退火、CMP —連串的配線形成處 理分類化時非常有利。 在此’如第23A圖所示,亦可分別使用具有以放射狀 (十字狀)朝相互垂直之方向延伸的翼部,且於沿著該各翼 ----1-----11 --------訂----1----^^^1 C請先閱讀背面之注意事項再填寫本頁)I, the plating position B is lowered to the pre-treatment / cleaning position c ', and the pure water fixing nozzle 34 is used to supply pure water while rotating the substrate holding portion 36 and the cathode portion 38 for water washing. At this time, the sealing material 90 and the cathode 88 can be cleaned simultaneously with the substrate by using pure water directly supplied to the cathode portion or pure water scattered from the surface of the substrate ff. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs After the washing process, it is dried. That is, the supply of pure water from the fixed nozzle 34 is stopped, and the rotation speeds of the substrate holding portion 36 and the cathode portion 38 are increased ', and then the pure water on the substrate surface is shaken off by centrifugal force and dried. At the same time, the sealing material 90 and the cathode 88 can be dried. When the drying process is completed, the rotation of the substrate holding portion 36 and the cathode portion 38 is stopped, and the substrate holding portion 36 is lowered to the substrate receiving and receiving position A. In this way, the gripping claw portion 76 is released from holding the substrate W, and the substrate W is placed on the holder 70. At the same time, the cover body 40 is also lowered. As described above, all the processes such as the plating process and the pre-attachment process and the cleaning and drying process are completed. The transfer robot 14 inserts its arm from the substrate carrying port 50 under the substrate W, and raises the arm in this state. China National Standard (CNS) A4 specification (21 × 297 mm) 41 312144 1221862 Printed by A7, Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (42 Substrate w received from substrate holding section 36. Then, The transfer robot 14 returns the processed substrate w received from the substrate holding portion 36 to the loading and unloading portion 10. However, in this embodiment, when a plating solution immersion material is mounted under the anode to perform the plating process Sometimes, bubbles may enter the pores formed in the plating solution impregnating material 110. These bubbles have the effect of an insulator and may cause the current segment of the electroplating process to be disturbed. For this problem, 'plating Before the treatment, the electroplating solution discharge pipe 10 is sucked, the space where the electroplating solution impregnating material 110 is arranged is decompressed, and then the electroplating solution is introduced into the pipe. 104 The introduction of the plating solution into the plating solution impregnating material 11 is effective. In this way, the air bubbles entering the pores of the plating solution impregnation material 11 can be promoted to run out to the outside, and high quality can be achieved by uniform current distribution. In addition, if this process is also performed when the plating apparatus is raised, it is very effective because the air bubbles that first enter the pores of the plating solution impregnating material 110 can be removed. According to this embodiment, the plating apparatus uses a substrate In the state where the holding part holds the substrate upward, the plating process, the pre-processing attached to the plating process, and other processes such as washing and drying processes can be performed before and after the plating process. Therefore, all processes of plating can be performed in a single device, and The simplification of the device can be achieved, and an electric mining device with a small footprint can be provided at a low cost. In addition, as for the recording unit, it can be mounted on other semiconductor manufacturing devices. It is very advantageous to classify the wiring formation process. Here, as shown in FIG. 23A, it is also possible to use a radial (cross) shape. The wings extending in a direction perpendicular to each other, and along the wings ---- 1 ----- 11 -------- order ---- 1 ---- ^^^ 1 C (Please read the notes on the back before filling out this page)
312144 經濟部智慧財產局員工消費合作社印製 1221862 五、發明說明(43 部之長邊方向預定位置具有電鍍液導入孔l〇4b之電鍍液 導入管104,使用在對應於該電鍍液導入孔i〇4b之位置具 有電鍍液注入孔98a之陽極(未圖示)。此時,與前述同樣 地’在大致對應於陽極之電鍍液注入孔98a之位置,形成 有用以交聯電鍍液浸潰材110與基板W之被電鍍面的電鍍 液柱,且隨著電鍍液之持績供給,而使電鍍液柱慢慢成長 後’會在電鍍液導入管104所區分的各象限内產生擴散成 放射狀的電鍍液Q之液流,以使電鍍液q擴散至基板?之 整個被電鑛面。 此外,如第23B圖所示,將電鍍液導入管ι〇4互相連 通並且配置成同心圓狀,且於預定位置設置電鍍液導入孔 104b之情況也會產生同樣的電鍍液q之液流。電鍍液導入 管104之電鍍液導入孔1 〇4b亦可等間隔設置等徑之孔,但 亦可調整間距及孔徑以控制電鑛液之排出。 而且’如第24圖及第25圖所示,亦可於陽極98之端 部集中設置一個或複數個電鍍液注入孔98a,並於該各電 鑛液注入孔98a同時導入電鍵液。此情況下,與前述同樣 地,在大致對應於陽極98之電鍍液注入孔98a之位置,形 成有用以交聯電渡液浸潰材110與基板W之被電鍍面的電 鑛液柱120,且隨著電鍍液之持續供給,而使電鍍液柱慢 慢成長後,會產生朝對面側之一方向流動之電鍍液Q之液 流’以使電鍍液Q擴散至基板W之整個被電鑛面。 I --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 再者,如第26圖及第27圖所示,亦可在將基板评保 持成水平之狀態下,使陽極98侧傾斜於基板而配置,且312144 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 V. Description of the Invention (Plating solution introduction pipe 104 having plating solution introduction holes 104b at a predetermined position in the longitudinal direction of the Ministry of Use, corresponding to the plating solution introduction holes i 〇4b has an anode (not shown) having a plating solution injection hole 98a. At this time, as described above, at a position substantially corresponding to the plating solution injection hole 98a of the anode, a cross-linked plating solution impregnated material is formed. 110 and the plating liquid column on the plated surface of the substrate W, and with the supply of the plating solution, the plating solution column gradually grows, and it will diffuse into radiation in each quadrant distinguished by the plating solution introduction tube 104. The flow of the electroplating solution Q is spread to spread the electroplating solution q to the entire surface of the substrate. In addition, as shown in FIG. 23B, the electroplating solution introduction pipes ι4 communicate with each other and are arranged in a concentric circle shape. When the plating solution introduction holes 104b are provided at predetermined positions, the same liquid flow of the plating solution q will be generated. The plating solution introduction holes 104b of the plating solution introduction tube 104 may also be provided with holes of equal diameter, but also Adjustable The pitch and aperture are used to control the discharge of the electric ore liquid. Moreover, as shown in FIG. 24 and FIG. 25, one or a plurality of electroplating liquid injection holes 98a may be collectively provided at the end of the anode 98, and the electric ore The key injection liquid is simultaneously introduced into the liquid injection hole 98a. In this case, the plating solution injection hole 98a corresponding to the anode 98 is formed at a position substantially corresponding to the plating solution injection hole 98a of the anode 98 and the substrate W is plated. The electric ore liquid column 120 on the opposite side, and with the continuous supply of the electroplating liquid, the electroplating liquid column gradually grows, and a liquid flow of the electroplating liquid Q flowing in one direction on the opposite side is generated to diffuse the electroplating liquid Q. To the entire surface of the substrate W. I -------- Order --------- (Please read the precautions on the back before filling this page) Furthermore, as shown in Figure 26 and As shown in FIG. 27, the anode 98 side can also be arranged while tilting the anode 98 side while the substrate rating is kept horizontal, and
1221862 A7 五、發明說明(44 ) 於該陽極98之接近基板w之位置設置電鍍液注入孔98a, 並導入電鍍液於該電鍍液注入孔98a,同時使陽極98側緩 緩倒向基板W側而與基板w形成水平狀態。此時,與前述 同樣地,在對應於陽極98之電鍍液注入孔98a之位置,形 成有用以交聯電鍍液浸潰材11〇與基板W之被電鑛面的電 鍍液柱120,且隨著陽極98與基板W之傾斜角度逐漸變 小’會產生陽極98與基板W之被電錢面間的電鍵液朝某方 向展開的電錢液Q之液流,以使電鍍液q擴散至基板W之 整個被電鑛面。 此外’與前述相反地,亦可先將陽極側配置成水平狀 態’將基板傾斜於陽極侧而配置,並在注入電鑛液的同時, 使基板逐漸倒下而平行於陽極側。 第28圖及第29圖顯示本發明再一其他實施形態之陽 極9 8以及電鑛液浸潰材11 〇。亦即,該例中,電鍍液浸潰 材11〇係由氧化鋁、碳化矽、模來石(muilite)、氧化锆、 二氧化鈦、謹青石等多孔陶瓷或聚丙烯及聚乙烯等燒結體 等硬質多孔體,或是這些之複合材料所構成。例如在氧化 銘系陶瓷的情況下,可使用孔徑3〇至2〇〇μπ1、氣孔率2〇 至95%、厚度5至20mm ’較佳為8至1 5mm左右的電鍍液浸 潰材。 而且’該電鍍液浸潰材11 〇係在其上部設有凸緣部 110a,並以外殼94及支持框96(參照第17圖及第18圖) 挾持該凸緣部11 〇a而固定,於該電鍍液浸潰材丨丨〇上面則 載置並保持有陽極9 8。此外,該實施形態之情況下,可載 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 312144 --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 1221862 A71221862 A7 V. Description of the invention (44) A plating solution injection hole 98a is provided at a position of the anode 98 near the substrate w, and a plating solution is introduced into the plating solution injection hole 98a, while the anode 98 side is gradually poured down to the substrate W side It is in a horizontal state with the substrate w. At this time, in the same manner as described above, at the position corresponding to the plating solution injection hole 98a of the anode 98, a plating solution column 120 for cross-linking the plating solution impregnating material 11 and the substrate surface of the substrate to be electroplated is formed. The inclination angle between the anode 98 and the substrate W is gradually reduced, and a liquid flow of the electric money liquid Q spreading in a certain direction is generated from the key liquid between the anode 98 and the to-be-charged surface of the substrate W, so that the plating solution q is diffused to the substrate. The entire surface of W is mined. In addition, "contrary to the foregoing, the anode side may be arranged in a horizontal state first", and the substrate may be arranged obliquely to the anode side, and the substrate may be gradually lowered and parallel to the anode side while the electric mineral liquid is injected. Fig. 28 and Fig. 29 show the anode 9 8 and the electro-mineral fluid impregnated material 11 0 according to still another embodiment of the present invention. That is, in this example, the plating solution impregnating material 110 is composed of alumina, silicon carbide, mullite, zirconia, titania, porous ceramics such as lapis lazuli, or hardened materials such as polypropylene and polyethylene. Porous bodies, or composite materials of these. For example, in the case of oxidized ceramics, a plating solution impregnating material having a pore diameter of 30 to 200 μπ1, a porosity of 20 to 95%, and a thickness of 5 to 20 mm, preferably 8 to 15 mm can be used. In addition, the plating solution impregnating material 110 is provided with a flange portion 110a on an upper portion thereof, and is held by the casing 94 and the support frame 96 (see FIGS. 17 and 18) to be fixed, An anode 98 is placed and held on the plating solution impregnated material. In addition, in the case of this embodiment, the size of this paper can be applied to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 312144 -------- Order --------- ( (Please read the notes on the back before filling out this page) 1221862 A7
經濟部智慧財產局員工消費合作社印製 置多孔體或網孔(mesh)狀等各種形狀之陽極。 如上所述,由於係以多孔體構成電鍍液浸潰材110, 因此可透過複雜地進入其内部之電鍍液,增加電鍍液浸潰 材110内部之電阻,而謀求電鍍膜厚之均一性,同時可防 止顆粒的產生。而且,由於在電鍍液浸潰材110上載置並 保持陽極98,所以即使隨著電鍍的進行,使得與電錢液浸 潰材110接觸之陽極98下面溶解,也不需使用固定陽極 98用的治具,而可以陽極98本身之自重,使陽極98下面 與基板W間保持一定的距離,並且可防止空氣混入於此以 致產生空氣滞留。 而且在該例中,係於陽極98上面設置有與第22圖所 示相同的朝直徑方向延伸之十字形狀電鍍液導入管1〇4, 並於陽極98之相對向於設在該電鍍液導入管1〇4之電鍍液 導入孔104b的位置設有電鍍液注入孔98a。此外於陽極98 設有多數之貫穿孔98b。 再者,該例係顯示於電鍍液浸潰材110上面載置並保 持陽極98之例,然而亦可使電鍍液浸潰材11〇與陽極98 配置於分開位置。此種情況下,尤其是使用溶解性陽極作 為陽極98時,陽極會從下方逐漸溶解,因此有時也會有陽 極與電鍍液浸溃材之間隙隨著時間的經過而變大,以致產 生0至20mm左右的間隙之情形。 根據該實施形態,在大致對應於陽極98之電鍍液注入 孔98a之位置形成有電鍍液柱120。該電鍍液柱120係使 電鍍液從電鍍液浸潰材110下面到達基板W的上面(被電鍍 - I — — — — — — I— I------ f請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 45 312144 1221862Anodes of various shapes such as porous bodies or meshes are printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. As described above, since the plating solution impregnating material 110 is composed of a porous body, it is possible to increase the resistance inside the plating solution impregnation material 110 through the plating solution that enters into the inside complicatedly, and to achieve uniformity of the plating film thickness. Can prevent the generation of particles. Furthermore, since the anode 98 is placed and held on the plating solution impregnating material 110, even if the underside of the anode 98 in contact with the electrolytic solution impregnation material 110 is dissolved as the plating progresses, there is no need to use a fixed anode 98 The jig can have the weight of the anode 98 itself, keep a certain distance between the lower surface of the anode 98 and the substrate W, and prevent air from being mixed thereinto, resulting in air retention. Furthermore, in this example, a cross-shaped plating solution introduction tube 104 extending in the diameter direction is provided on the anode 98 as shown in FIG. 22, and the anode 98 is provided opposite to the plating solution. The plating solution introduction hole 104b of the tube 104 is provided with a plating solution injection hole 98a. In addition, the anode 98 is provided with a plurality of through holes 98b. In addition, this example shows an example in which the anode 98 is placed and held on the plating solution impregnating material 110, but the plating solution impregnating material 110 and the anode 98 may be disposed at separate positions. In this case, especially when a soluble anode is used as the anode 98, the anode will gradually dissolve from below, so sometimes the gap between the anode and the plating solution impregnated material becomes larger with the passage of time, resulting in 0. To a gap of about 20mm. According to this embodiment, a plating solution column 120 is formed at a position substantially corresponding to the plating solution injection hole 98a of the anode 98. The electroplating solution column 120 makes the electroplating solution from the bottom of the electroplating solution impregnating material 110 to the top of the substrate W (electroplated-I — — — — — — I — I ------ f Please read the notes on the back first (Fill in this page again) The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 45 312144 1221862
五、發明說明(46 ) 經濟部智慧財產局員工消費合作社印製 面),以交聯電鍍液浸潰材110與基板w之被電鍍面。此時, 電鍍液在流動於電鍍液浸潰材11 〇内部時,係沿著其液流 方向稍微地擴散,因此可減輕電鍍液到達基板w時對種子 層5 (參照第1A圖)所造成的損害,亦即因局部碰到喷流所 造成的種子層現象,而可謀求後續之電鍍處理的膜厚均一 性。 此外,如第29圖之假想線所示,在電鍍液從電鍍液浸 潰材110下面到達基板W上面(被電鑛面)的電鑛液柱12〇 形成之後,例如亦可瞬間上升基板,使電鍍液浸潰材J i 〇 與基板W瞬間接近。而且,亦可在對基板之邊緣施加一些 壓力以彎曲成凹狀的狀態下形成相同的電鍍液柱12〇後, 放開所施加的壓力而使基板回復原來的形狀,以使電鍍液 浸潰材11 0與基板w瞬間接近。 藉此’例如在電鑛液浸潰材11 〇的厚度較厚的情況以 及密度較高(氣孔率低)的情況下,電鍍液流動於電鑛液浸 潰材110内部時的阻力會變大,因此便無法流出預定量的 電鍍液,而會攪亂電鍍液柱120之結合,即使於此時捲入 空氣,也可藉由使電鍍液浸潰材110與基板w瞬間接近, 以於電錢液產生朝向外側的快速液流,並與該電鑛液一同 將氣泡趕出至外部,同時可在短時間内將電錢液供至電鑛 液浸潰材11 0與基板W之間。 此外,在無通電狀態下使電鍍液與種子層5 (參照第J A 圖)接觸會導致種子層5的減少,即使在通電狀態,若電鑛 液無法在短時間内擴散於基板W之表面,則電錢初期的膜 I—--------^ {請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 46 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(47 厚會產生參差不齊,這些都會成為破壞之後的電鍍膜厚均 一性的原因,然而,如上述在短時間内於電鍍液浸潰材i j 〇 與基板W間供給電鍍液,可防止這些弊端。 而且如第28圖所示,可在電鍍處理進行中,從電鍍液 注入孔98a供給電鍍液於電鍍液浸潰材11〇,以注入電鍍 液於電鍍液浸潰材110與基板W之被電鍍面之間,同時經 由貫穿孔98b ,從電鍍液排出管1〇6吸引並排出與該注入 之電鍍液等量的電鍍液。 如此,藉由在電鍍處理中攪拌電鍍液,對於液體擴散 時無法棑出的氣泡,以及液體擴散後之電鍍處理中所產生 的氣泡皆可去除。 此外,該電鍍裝置中,基板W之被電鍍面與陽極98的 間隔狹窄,所以只需少量的電鍍液,但相反地,電鑛液中 的添加劑及離子的量會受到限制,因此為了在短時間内有 效地進行電鍍,必須在電鍍液中均勻地分布這些添加劑 等。關於此點,根據該實施形態,由於在電鍍液處理中會 攪拌電鍍液,因此可在均勻分布添加劑及離子的狀態下進 行電鑛。 再者,如第30圖所示,亦可於陽極98上面再設置添 加劑導入管105,該添加劑導入管i 05具有與電鍍液導入 管104相同構造的添加劑導入通路i〇5a及添加劑導入口 105b’而在陽極98之相對向於該添加劑導入口 i〇5b之位 置設置添加劑注入孔98c,以於電鍍處理中,從添加劑注 入孔98c斷續或連績地供給含有調整劑及載劑等添加劑或 Μ氏張尺度適用中國國家標準(CNS)A4規格(21G X 297公愛)------ 47 312144 --------^--------- C請先閱讀背面之注意事項再填寫本頁) 1221862 A7 B7 五、發明說明(48 ) 離子之液體(電鍍液),藉此補充因進行電鍍而消耗的添加 劑及離子。此種情況下,添加劑係屬微量,因此不需要從 貫穿孔98b排出電鍍液。而且,於電鍍進行中改變添加劑 成分比,可縮小配線部(1 ine and space部)與平坦部之膜 厚高低差,亦可提高後處理之CMP特性。 第31A圖及第31B圖、以及第32A圖及第32B圖,係 以硬質多孔體構成電鍍液浸潰材110之本發明的各別不同 之其他實施形態,這些實施形態係於電鍍液浸潰材丨丨〇 了 面,具有藉由電鍍液浸潰材110與基板W的相對旋轉,以 使其間的電鍍液呈放射狀朝外側擴散的機構,其他構成則 與第28圖及第29圖所示之實施形態相同。 亦即,第31A圖及第31B圖係於電鍍液浸潰材11〇下 面,設置朝向外側並沿著旋轉方向彎曲的複數個螺旋狀突 起(葉片)110b,第32A圖及第32B圖係使電鍍液浸潰材11〇 下面本身形成中央朝下方鼓出且具有例如1/1〇〇左右之傾 斜度的圓錐面ll〇c。 這些實施形態係於形成用以交聯電鍍液浸潰材11()與 基板W之被電鍍面的電鍍液柱120之後,例如旋轉基板¥, 而使電鍍液浸潰材110與基板W相對地旋轉,藉此可隨著 該旋轉’一面攪拌電鑛液浸潰材11〇與基板W間的電鍍液, 一面使之呈放射狀朝外側擴散,以強制性地將進入電鍍液 浸潰材11 0與基板W間的氣泡B與電鍍液一同朝外側排 出,同時可在短時間内將電鍍液供給電鍍液浸潰材11〇與 基板W之間。 ------------9 C請先閱讀背面之注意事項再填寫本頁) —訂--------- 經濟部智慧財產局員工消費合作社印製V. Description of the invention (46) (Printed surface of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs), the plating surface of the substrate 110 and the substrate w are cross-linked with the plating solution immersion material 110. At this time, when the plating solution flows inside the plating solution impregnating material 110, the plating solution diffuses slightly along the flow direction of the plating solution, so that the seed layer 5 (see FIG. 1A) caused by the plating solution reaching the substrate w can be reduced. The damage, that is, the seed layer phenomenon caused by the local encounter with the jet, can achieve the uniformity of the film thickness of the subsequent electroplating treatment. In addition, as shown by an imaginary line in FIG. 29, after the electroplating liquid column 120 is formed from the bottom of the electroplating solution impregnating material 110 to the upper surface of the substrate W (the surface being electro-mineralized), the electroplating liquid can be lifted up instantly, The plating solution impregnating material J i 0 and the substrate W are brought close to each other in an instant. In addition, the same plating solution column 12 can be formed while applying some pressure to the edge of the substrate to bend into a concave shape, and then release the applied pressure to restore the substrate to its original shape, so as to impregnate the plating solution. The material 110 and the substrate w approached instantaneously. Therefore, for example, in the case where the thickness of the electro-mineral liquid impregnating material 110 is thick and the density is high (low porosity), the resistance when the plating solution flows inside the electro-hydraulic liquid impregnating material 110 increases. Therefore, a predetermined amount of plating solution cannot flow out, and the combination of the plating solution column 120 will be disturbed. Even if air is involved at this time, the plating solution immersion material 110 and the substrate w can be approached instantaneously for electric money. The liquid generates a rapid liquid flow to the outside, and together with the electric mineral liquid, the bubbles are driven out to the outside, and at the same time, the electric liquid can be supplied between the electric mineral liquid immersion material 110 and the substrate W in a short time. In addition, contacting the plating solution with the seed layer 5 (refer to FIG. JA) in a non-energized state will cause the seed layer 5 to decrease. Even in the energized state, if the electric mineral liquid cannot diffuse on the surface of the substrate W in a short time, The film I in the early stage of electricity money —-------- ^ {Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 46 312144 1221862 Printed A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (47 thickness will produce unevenness, which will cause the thickness uniformity of the plating film to be destroyed afterwards. However, as mentioned above, the plating Supplying a plating solution between the liquid immersion material ij 〇 and the substrate W can prevent these disadvantages. Furthermore, as shown in FIG. 28, the plating solution can be supplied from the plating solution injection hole 98 a to the plating solution impregnation material 11 during the plating process. 〇, inject a plating solution between the plating solution impregnating material 110 and the plated surface of the substrate W, and simultaneously suck and discharge the same amount of plating as the injected plating solution through the through-hole 98b from the plating solution discharge pipe 106. So, borrow By stirring the plating solution during the electroplating process, the bubbles that cannot be exuded when the liquid is diffused and the bubbles generated during the electroplating process after the liquid is diffused can be removed. In addition, in this electroplating device, the plated surface of the substrate W and the anode The interval between 98 is narrow, so only a small amount of plating solution is needed, but on the contrary, the amount of additives and ions in the electric mineral solution is limited. Therefore, in order to effectively perform plating in a short time, it must be evenly distributed in the plating solution. These additives, etc. In this regard, according to this embodiment, the electroplating solution is stirred during the electroplating solution treatment, so that the electric ore can be performed in a state where the additives and ions are uniformly distributed. Moreover, as shown in FIG. 30, An additive introduction pipe 105 may be further provided on the anode 98. The additive introduction pipe 105 has an additive introduction passage 105a and an additive introduction port 105b 'which have the same structure as the plating solution introduction pipe 104, and faces the additive on the anode 98. An additive injection hole 98c is provided at the position of the introduction port i05b, so that the additive injection hole 98c is intermittently or continuously supplied from the additive injection hole 98c during the plating process. Additives such as modifiers and carriers, or M-tension scales are applicable to China National Standard (CNS) A4 specifications (21G X 297 public love) ------ 47 312144 -------- ^ ---- ----- C Please read the precautions on the back before filling this page) 1221862 A7 B7 V. Description of the Invention (48) Ionic liquid (plating solution) to supplement the additives and ions consumed by electroplating. In this case, since the amount of the additive is small, it is not necessary to discharge the plating solution from the through-hole 98b. In addition, changing the additive component ratio during plating can reduce the film thickness difference between the wiring section (1 ine and space section) and the flat section, and can also improve the CMP characteristics of the post-treatment. Figures 31A and 31B and Figures 32A and 32B are different embodiments of the present invention in which the plating solution impregnating material 110 is composed of a hard porous body. These embodiments are based on the plating solution impregnation The surface is provided with a mechanism for relatively rotating the plating solution impregnating material 110 and the substrate W so that the plating solution therebetween diffuses radially outward, and other structures are the same as those shown in FIGS. 28 and 29. The embodiment shown is the same. That is, FIG. 31A and FIG. 31B are provided below the plating solution impregnating material 110, and a plurality of spiral-shaped protrusions (blades) 110b which are bent outward and curved along the rotation direction are provided. The lower surface of the plating solution impregnating material 110 itself forms a conical surface 110c that bulges downward toward the center and has an inclination of about 1/100, for example. These embodiments are performed after forming a plating solution column 120 that cross-links the plating solution impregnation material 11 () and the plated surface of the substrate W, for example, by rotating the substrate ¥, so that the plating solution impregnation material 110 is opposed to the substrate W By rotating, the electroplating liquid impregnating material 11 and the substrate W can be stirred along with the rotation, while the electroplating liquid impregnating material 11 diffuses radially outward to forcefully enter the electroplating liquid impregnating material 11 The bubbles B between 0 and the substrate W are discharged to the outside together with the plating solution, and at the same time, the plating solution can be supplied to the plating solution impregnating material 11 and the substrate W in a short time. ------------ 9 C Please read the notes on the back before filling out this page) —Order --------- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy
1221862 A71221862 A7
五、發明說明㈠9 ) 經濟部智慧財產局員工消費合作社印製 尤其是如第31A圖及第31B圖所示,於電鍍液浸潰材 110下面設置突起11 〇b,該突起11 〇b具有促進電鍍液擴散 的整流作用以及伴隨旋轉之攪拌作用,因而可將電鍍液中 有限的添加劑及離子均勻地分布於基板W之表面。 此外,亦可設置朝外側呈放射狀擴大之突起以代替第 31A圖及第31B圖所示之螺旋狀突起11 〇b,或是設置凹部 (溝槽)代替這些突起,而且亦可形成圓弧狀球形以代替第 32A圖及第32B圖所示之圓錐面ii〇c。 再者,如第33圖所示,亦可在以密封材90將周緣部 液密密封之基板W被電鍍面上方預先擴散電鍍液,並且一 邊旋轉例如第32A圖及第32B圖所示之下面形成圓錐面 11 〇的電錢液浸潰材110,一邊使之下降,以使電鍍液浸潰 材110與基板W相對地旋轉並且逐漸接近,並以電鑛液填 滿電鍍液浸潰材11 0與基板W之間。藉此,可使電錢液浸 潰材110與基板w之間的氣泡B隨著雙方相互接近,逐漸 地朝外側移動並確實棑出,而可以無氣泡存在的電鍵液填 滿於電鍍液浸潰材110與基板W之間。 此外,前述各實施形態係顯示將基板向上保持之例, 然而基板與陽極之上下關係當然不限於此。 根據該實施形態之電鍍裝置,可在以基板保持部保持 基板向上之狀態,於電鑛處理時前後進行電鑛處理及電錢 處理所附屬之前處理以及清洗·乾燥處理等其他處理。因 此,可謀求裝置之簡化,同時可廉價地提供佔有面積小即 足夠的電鍍裝置。而且,可不殘留氣泡而將電鍍液填滿美 --------------------訂---------. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 49 312144 A7 A7 經濟部智慧財產局員工消費合作社印製 '^ ---- B7 五、發明說明(5G ) 板之被電鍍面與陽極之間,因此可於被電鍍面形成均勻且 品質良好的電鍍覆蓋膜。 在此’如第34圖及第35圖所示,將下端且有大尺寸 之頭部112a之多數大致圓柱狀固定插銷112,埋設並固定 於電鍍液浸潰材11〇内部,使該頭部112a無法從上方抽 出並將該轴部貫穿设在陽極98内部之貫穿孔ggc,並且 朝上方突出而配置。然後,透過例如合成樹脂製成的u字 形板簧114朝上方推壓該固定插銷112,以使電鍍液浸潰 材11〇透過板簧114之彈力密接並安裝於陽極98下面。 此外,該例係於電鑛液浸潰材1 1 Q之下面側設置預定 深度的開縫110a,使固定插銷112之頭部1123位於該開 縫110a内,並且使軸部穿透電鍍液浸潰材11〇内部,以將 固定插銷112固定於電鍍液浸潰材11〇,並藉由電鍍液浸 潰材110本身的彈力使之復元,而將該開縫丨丨〇a封閉。 在此,前述固定插銷112之材質可例舉聚丙烯、pEEK、 PVC、聚乙烯等,但只要對於電鍍液之耐久性、插銷的強度 強,則當然不限定於此。此外,固定插銷丨丨2之直徑係例 如〇·5至4mm左右。再者,固定插銷112之安裝間距係因 所使用之電鍍液浸潰材110及電鍍面積等而異,在例如8 英吋基板的電鍍中,安裝間距係5至4〇顏左右,安裝數目 係10至150支左右,最妤安裝間距為2 〇mm,安裝數目為 50至100支左右。 藉此,形成有黑膜的陽極98下面係由電鍍液浸潰材 110所保持的電鍍液所濕潤,而且電鍍液浸潰材11〇具有 --------^--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 50 312144V. Description of Invention ㈠ 9) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, especially as shown in Figure 31A and Figure 31B, a protrusion 11 〇b is provided under the plating solution impregnating material 110, and the protrusion 11 〇b has a promotion The rectifying effect of the plating solution diffusion and the stirring effect accompanying the rotation, the limited additives and ions in the plating solution can be evenly distributed on the surface of the substrate W. In addition, it is also possible to provide protrusions that expand radially outward instead of the spiral protrusions 11 0b shown in FIGS. 31A and 31B, or to provide recesses (grooves) instead of these protrusions, and also to form a circular arc Instead of the conical surface iioc shown in Figs. 32A and 32B, the shape is spherical. In addition, as shown in FIG. 33, the plating solution may be diffused in advance above the plated surface of the substrate W that is hermetically sealed at the peripheral edge portion by the sealing material 90, and rotated, for example, as shown in FIGS. 32A and 32B. The electrolyzed liquid impregnating material 110 having a conical surface 11 〇 is lowered so that the electroplating liquid impregnating material 110 and the substrate W are relatively rotated and gradually approached, and the electroplating liquid impregnating material 11 is filled with the electric mineral liquid. Between 0 and the substrate W. As a result, the bubbles B between the electrolytic solution impregnating material 110 and the substrate w can be gradually moved outward as they approach each other, and can be surely extruded, and the electroplating solution can be filled with the key solution without bubbles. Between the collapse material 110 and the substrate W. In addition, each of the aforementioned embodiments shows an example of holding the substrate upward, but the relationship between the substrate and the anode is not limited to this. According to the electroplating apparatus of this embodiment, the substrate holding portion holds the substrate upward, and other processes such as pre-treatment attached to the electric mining process and the electric money processing and cleaning and drying processes can be performed before and after the electric mining process. Therefore, the simplification of the device can be achieved, and at the same time, a plating device having a small footprint can be provided at a low cost. Moreover, the plating solution can be filled with beauty without remaining air bubbles. -------------------- Order ---------. (Please read the note on the back first Please fill in this page again for this matter) This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 49 312144 A7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ ---- B7 V. Description of Invention (5G) Between the plated surface and the anode of the plate, a uniform and high-quality plated coating film can be formed on the plated surface. Here, as shown in FIG. 34 and FIG. 35, most of the approximately cylindrical fixing pins 112 having a large head 112a at the lower end are embedded and fixed inside the plating solution impregnating material 11 so that the head 112a cannot be pulled out from above, and the shaft portion is penetrated through a through hole ggc provided inside the anode 98, and is arranged to protrude upward. Then, the fixing pin 112 is pushed upward by a U-shaped plate spring 114 made of, for example, a synthetic resin, so that the plating solution impregnating material 110 is tightly attached through the spring force of the plate spring 114 and is mounted under the anode 98. In addition, in this example, a slit 110a of a predetermined depth is provided on the lower side of the electric mineral liquid immersion material 1 1 Q, so that the head 1123 of the fixed bolt 112 is located in the slit 110a, and the shaft portion penetrates the plating solution. Inside the crushed material 110, the fixing plug 112 is fixed to the plating solution-impregnated material 110, and the elasticity of the plating solution-impregnated material 110 is used to restore the opening, thereby closing the slit. Here, the material of the fixed pin 112 may be polypropylene, pEEK, PVC, polyethylene, etc., but it is not limited to this as long as the durability of the plating solution and the strength of the pin are strong. In addition, the diameter of the fixing pin 丨 2 is, for example, about 0.5 to 4 mm. In addition, the mounting pitch of the fixed pins 112 varies depending on the plating solution impregnating material 110 and the plating area used. For example, in the plating of an 8-inch substrate, the mounting pitch is about 5 to 40 colors, and the mounting number is About 10 to 150 pieces, the maximum installation distance is 20 mm, the number of installation is about 50 to 100 pieces. Thereby, the lower surface of the anode 98 on which the black film is formed is wetted by the plating solution held by the plating solution impregnation material 110, and the plating solution impregnation material 11 has -------- ^ ----- ---- (Please read the notes on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) 50 312144
1221862 五、發明說明(51 ) 如過濾器般之作用,可防止黑膜的乾燥及脫落,甚至氧化。 再者,隨著電鍍的進行,即使陽極98逐漸溶解消耗,使其 厚度變薄,仍可藉由板簧114之彈力經常使陽極98與電鍍 液浸潰材110密接,因而可防止空氣滞留的形成。一般, 陽極98經過一個月的電鍍處理會消耗20至40mm左右。 此外,如第36圖所示,亦可使用在下端具有釣鉤狀部 112b之固定插銷112,且將該釣鉤狀部112b從電鍍液浸潰 材110上面側鉤住該電鑛液浸潰材11 〇而固定,並以利用 例如合成樹脂製成的線圈彈簧 朝上方彈壓固定插銷 Π2。再者,從安裝方法及價格方面來看,板簧較線圈彈簧 有利。 又,如第37圖所示,亦可將直徑例如2mm左右之圓柱 狀PVC(氣乙烯)或PET製成的固定插銷112,從陽極上面側 貫穿陽極98之貫穿孔98c内而配置,並將粘著劑122塗在 外露在陽極98下面的固定插銷112前端面,以粘著並固定 電鍍液浸潰材110。該粘著劑122只要係氣乙烯系、梦改 質聚合物、有機物之溶解或顆粒之產生較少者即可,並不 限定於這些。 再者,如第38圖所示,亦可於固定插銷112前端設置 尖塔狀部112c,以圖得將固定插銷112插通於電鍍液浸潰 材110時之便。此時,如第38圖所示,亦可於電鍍液浸潰 材11 0之下面側設置針孔狀開縫11 0a。 第39圖係應用本發明再一其他實施形態之電解電鑛 裝置的電解處理裝置之主要部分概要圖,第40圖係其電性 --------^--------- ^請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 51 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(52 ) 等效電路圖。該實施形態係將直徑2〇〇mm之矽基板(以下稱 為基板)以面朝下的方式保持,並於該表面(下面)進行銅電 鍍者,該基板W下面(電鍍面)則形成有例如100nm膜厚之 濺鍍銅薄膜以作為導電層(種子層)。 該電鍍裝置中設有用來保持以例如硫酸銅為原料之電 鍍液210,且朝向上方形成開口之杯狀電鍍槽212,該電鍍 槽212之底部則設置例如具有直徑3〇mjn之中央孔214a的 環狀陽極板214。該陽極板214之材質係例如含有〇· 〇4重 量百分比之磷的銅。在電鍍槽212周圍則配置有用來回收 從該電鍍槽212上部溢出的電鍍液21〇之電鍍液收容部 216 〇 位在基板W周邊部,且於電鍍槽212上方設有··壓接 於基板w之下面周緣部,以阻止電鍍液21〇由此流出的凸 緣狀密封材218、以及位於該凸緣狀密封材2 i 8外側,並 與基板w接觸,以將陰極電位導入該基板w之接點22〇。 在電鍍槽212内部位於陽極板214與基板w之間,配 置有傳導率比電鍍液210小的高電阻結構體222。該高電 阻結構體222在此例中,係於例如氣孔率3〇%、平均孔徑 ΙΟΟμιη、厚度L為20mm的氧化鋁製成之多孔陶瓷板224内 部含有電鍍液210而構成。亦即,多孔陶瓷板224本身雖 疋絕緣體,但於該内部複雜地注入電鍍液21〇,以於厚度 方向形成相當長的通路,可構成高電阻結構體222。亦即, 由於形成在多孔陶瓷板的氣孔彎曲率高,所以比起於厚度 d之絕緣物上形成多數氣孔者,相同厚度d之多孔陶瓷板 --------訂--------- f請先閱讀背面之注意事項再填寫本頁)1221862 V. Description of the invention (51) It acts like a filter to prevent the black film from drying out and falling off, or even oxidizing. In addition, with the progress of electroplating, even if the anode 98 is gradually dissolved and consumed to make it thinner, the anode 98 can often be brought into close contact with the plating solution impregnating material 110 by the spring force of the plate spring 114, thereby preventing air retention. form. Generally, the anode 98 consumes about 20 to 40 mm after a month of plating. In addition, as shown in FIG. 36, a fixing pin 112 having a hook-shaped portion 112b at the lower end may be used, and the hook-shaped portion 112b may be hooked from the upper side of the electroplating liquid impregnating material 110 to the electro-mineral liquid impregnating material 11 〇 is fixed, and the fixing pin Π2 is pushed upward by a coil spring made of, for example, a synthetic resin. Furthermore, in terms of mounting method and price, leaf springs are more advantageous than coil springs. In addition, as shown in FIG. 37, a fixed plug 112 made of a cylindrical PVC (gas vinyl) or PET having a diameter of, for example, about 2 mm can be arranged through the through hole 98 c of the anode 98 from the anode upper side, and The adhesive 122 is applied to the front end surface of the fixing pin 112 exposed under the anode 98 to adhere and fix the plating solution impregnating material 110. The adhesive 122 is not limited to these as long as it is a gas-based vinyl, a dream-modifying polymer, an organic substance is dissolved, or particles are generated less. Furthermore, as shown in FIG. 38, a spire-like portion 112c may be provided at the front end of the fixed pin 112, so that it is convenient to insert the fixed pin 112 into the plating solution impregnating material 110 as shown in the figure. At this time, as shown in Fig. 38, a pinhole-shaped slit 110a may be provided on the lower surface side of the plating solution impregnating material 110. Figure 39 is a schematic diagram of the main part of an electrolytic treatment device to which an electrolytic power smelting device according to still another embodiment of the present invention is applied, and Figure 40 is its electrical property -------- ^ ------- -^ Please read the notes on the back before filling this page) Printed on the paper by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 51 312144 1221862 Printed by A7, Consumer Cooperatives of Property Bureau. V. Invention Description (52) Equivalent circuit diagram. In this embodiment, a silicon substrate (hereinafter referred to as a substrate) having a diameter of 200 mm is held face down, and copper plating is performed on the surface (lower surface), and the lower surface (plating surface) of the substrate W is formed. For example, a 100-nm-thick sputtering copper film is used as a conductive layer (seed layer). The electroplating device is provided with a cup-shaped electroplating bath 212 for holding an electroplating solution 210 made of, for example, copper sulfate, and forming an opening upward. The bottom of the electroplating bath 212 is provided with, for example, a central hole 214a having a diameter of 30 mjn.环 anode 板 214. The material of the anode plate 214 is, for example, copper containing 0.004 wt% of phosphorus. Around the plating tank 212, a plating solution storage section 216 for recovering the plating solution 21o overflowing from the upper part of the plating tank 212 is disposed at the periphery of the substrate W, and is provided above the plating tank 212 with a crimp on the substrate. The lower peripheral edge portion is provided with a flange-shaped sealing material 218 that prevents the plating solution 21 from flowing out therefrom, and is located outside the flange-shaped sealing material 2 i 8 and contacts the substrate w to introduce the cathode potential to the substrate w Its contact is 22o. A high-resistance structure 222 having a conductivity lower than that of the plating solution 210 is disposed inside the plating tank 212 between the anode plate 214 and the substrate w. In this example, the high-resistance structure 222 is composed of a porous ceramic plate 224 made of alumina having a porosity of 30%, an average pore diameter of 100 μm, and a thickness L of 20 mm. The plating solution 210 is contained inside. That is, although the porous ceramic plate 224 itself is an insulator, a plating solution 21 is complicatedly injected into the porous ceramic plate 224 to form a relatively long passage in the thickness direction, and a high-resistance structure 222 can be formed. That is, since the porosity of the porous ceramic plate is high, the porous ceramic plate of the same thickness d is more ordered than the porous ceramic plate of the thickness d. ----- f Please read the notes on the back before filling this page)
經濟部智慧財產局員工消費合作社印製 1221862 五、發明說明(53 ) 中的氣孔會形成2d至3d之較長通路。在該多孔陶瓷板224 之相對向於陽極板214之中央孔214a的位置,係以5mm 的間距叹有複數個例如直徑為扭的貫穿孔。此外, 多孔陶瓷板224亦可密接於陽極板214,反之亦可密接於 基板W。 藉此’將基板W向下配置於電鑛槽212上部,並使電 錢液210從電鍍槽212底部通過陽極板214之中央孔21栳 及多孔陶瓷板224之貫穿孔224a,然後朝上方喷出,而使 電鍍液210之喷流接觸於基板之下面(電鍍面),同時從 電鍍電源226施加預定電壓於陽極板214(陽極)與基板ψ 之導電層S(陰極)間,以於基板#下面形成電鍍膜。此時, 從電鑛槽212溢出的電鑛液210係由電鑛液收容部216回 收。 使用該實施形態之電鑛裝置,並分別將電流密度設定 為20mA/cm2,陽極板214上面與基板巧下面之間的距離乙 為50mm,而進行銅的電解電鍍時,與設置多孔陶瓷板224 前相較,電鍍所需之電源電壓大致上升2V。這是因為多孔 陶瓷板224具備傳導率比電鍍液210小的電阻元件之功 換言之’由於電鍍槽212之剖面積約為3〇〇cm2,因此 高電阻結構體222之電阻成為大致〇· 333Ω,且於第40圖 所示之等效電路中,藉由該高電阻結構體222所產生的電 阻Rp係作為新的電阻而加入。此外,在第40圖中,電阻 R1至R5顯示與第74圖所示之電阻R1至R5相同之電阻。 312144 —----訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1221862 A7 B7 五、發明說明(54 ) 如上述由高電阻結構體222產生大電阻Rp時,基板中 央部之電阻與周邊部之電阻的比,亦即(R2 + rp+R3 + R4) /(R2 + Rp+R3 + R4 + R5)接近1,導電層的電阻R5之影響成為 可忽視之程度,因而可縮小基板W表面之電阻所導致的電 流密度之面内差,以提高電鑛膜之面内均一性。 高電阻結構體222之電阻值在例如為200mm晶圓的情 況下係0.01Ω以上,較佳為〇·〇ι至2Ω的範圍,更佳為 0.03至1Ω的範圍,最佳為〇·〇5至〇·5的範圍。高電阻結 構體222之電阻值係由以下的步驟所檢測。首先,於電鍍 裝置内,在僅分開預定距離的陽極板214與基板ff所構成 的兩極間流通預定值之直流(I )而進行電鍍,並測量此時之 直流電源的電壓(VI)。繼之於同一電鍍裝置,配置預定厚 度之高電阻結構體於兩極間,並流通同值的直流(I )而進行 電鍍,並測量此時之直流電源的電壓(V2)。藉此,便可由 Rp=(V2-Vl)/I求出高電阻結構體之電阻值。此時,構成陽 極板之銅的純度最好為9 9. 99%以上。而陽極板與基板所構 成的兩極板間之距離在直徑200mm的基板之情況下最好係 5至25mm,在直徑300mm的基板之情況下最好係15至 75mm。此外,基板W上的導電層S之電阻R5係可藉由測試 器測量,或是藉由計算導電層S材料之電阻率與厚度求出 基板外周與中心之間的電阻值。 第41圖係如上所述,表示使用設置有由多孔陶瓷板 224構成的高電阻結構體222之電鍍裝置(本實施形態 例)、以及未設置該結構體之電鍍裝置(習知例),並於基板 ----— — — — — — —· I------訂--------—^swi. C請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮) 54 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(55 ) 界表面進行電鍍時之基板面内的電鍍臈之膜厚分布。由該 第41圖可知,於該實施形態之電鍍裝置中不會發生基板中 央部份的薄膜化現象,而可均勻地進行電鍍。 另一方面,電鍍液之電阻率約為5. 5Ω · cm,電鍍槽 212之剖面積約為300cm2,因此若想藉由拉開基板W與陽 極板214間的距離而獲得同樣的效果,亦即想在電鍍液210 獲传大致0.333Ω的電阻時’必須再分開大致18cm,如此 會導致裝置尺寸大型化。 此外,該實施形態雖顯示以氧化鋁製成的陶瓷板構成 高電阻結構體之例,然而可知利用其他材質的碳化矽陶瓷 等亦可獲得相同的效果。而且,氣孔率及孔徑、氣孔之彎 曲率等係可依目的適當地加以選擇。例如,該實施形態係 於多孔陶瓷板開設1 mm之貫穿孔,以促進電鑛液的循環, 然而在氣孔孔徑大的情況下則不需要。 而且只要使用將氣乙烯捆成纖維狀,並使之相互熔接 者,便可獲得具有大量於厚度方向筆直貫穿的孔之平板, 即使以這種平板構成高電阻結構體,亦可使用將聚乙烯醇 等發泡體或鐵弗龍(商標名稱)等纖維整形成織布或不織布 之樣態者’以構成尚電阻結構體。再者,組合這路或導體 與絕緣體、或組合兩個導體之複合體亦可獲得同樣的效 果。 這些高電阻結構體皆可在組裝於電鍍裝置前進行適當 的前處理。尤其是對於酸洗、脫脂、利用電鍍液或電鍍液 中某成分的清洗等非常有效。高電阻結構體之厚度及形狀 -----— — — — — — in —---訂---------. C請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 55 312144 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 1221862 A7 -------B7______ 五、發明說明(56 ) 只要不脫離本發明之主旨,當然可做適當的變化。 且該實施形態係對於電解電鍍加以說明,但若反轉電 流方向,亦即可直接使用該裝置,並反轉電源之極性,以 進行電解蝕刻,此種情況下可提高蝕刻之均一性。LSI的 鋼配線用電鍍處理,習知係在電鍍處理前後施以逆.電解以 進行電解蝕刻,例如使用該裝置,以20mA/cm2的電流密度 進行電鍍7.5秒,而形成50nm的銅電鍍膜,再反轉電源之 極性,並以5mA/cm2的電流密度進行蝕刻20秒,以對33nm 的鋼電鍍膜進行蝕刻,然後進行最後電鍍,可均勻地進行 蝕刻,而確實提高埋入特性。 第42圖顯示本發明再一其他實施形態之電解電鍍所 應用的電解處理裝置。該電鍍裝置係採用所謂的面朝上方 式,而基板W係向上載置於基板載置台230上,且在基板 W周邊設有例如維通橡膠製凸緣狀密封材234、以及位於該 凸緣狀密封材234外側且與基板w之導電層s接觸,以導 入陰極電位於該基板W之接點236。該凸緣狀密封材234 具有例如10mm的高度,而可保持電鍍液21〇。 於基板載置台230上方配置有保持具232,於該保持 具232則以分開預定間隔的狀態,保持固定著構成陽極板 238與高電阻結構體240之多孔陶瓷板242。該多孔陶竟板 242在該例中係由例如氣孔率20%、平均孔徑5〇以瓜、厚度 I為1 0mm的碳化矽(SiC)製成,並於内部含有電錢液 以構成高電阻結構體240。而且陽極板238係形成完全由 保持具232及多孔陶瓷板242覆蓋的構造。此外,多孔陶 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公董) --*--— 56 312144 -----------------1 丨訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1221862 A7 __ B7 五、發明說明(57 ) 兗板242最好係以其他儲存有電鍍液之槽狀物(未圖示)事 先浸泡於電鍍液中。 而在基板W上面與多孔陶瓷板242下面之間,設有將 間隙Si a又疋為大致2ππη的第1電鑛室244,並於多孔陶竟 板242上面與陽極板238下面之間,設有將間隙s2設定為 大致1· 5mm的第2電鍍室246,於上述各電鍍室244、246 可導入電鍍液210。該電鍍液210之導入方法可採用從凸 緣狀密封材234與多孔陶瓷板242之端面間的間隙導入, 或是經由設在陽極板238之貫穿孔,導入對於多孔陶瓷板 242背面側(上部)加壓的電鍍液21〇等方法。 此外,該實施形態中,亦可於電解電鍍進行中,旋轉 基板W與基板載置台230,或是陽極板238與多孔陶瓷板 242 〇 使用該實施形態的電鍍裝置在基板W上面(電鍍面)進 行銅電鍍,並檢查該銅電鍍臈的膜厚時,藉由設置多孔陶 竟板242構成的高電阻結構體240,可與前述實施形態同 樣地提高膜厚之面内均一性。 該實施形態係使陽極板238由多孔陶瓷板242及保持 具232完全覆蓋,並於陽極板238與多孔陶瓷板242之間 填滿電錢液210之構造,然而除了上述構成之外,再藉由 適當選擇多孔陶瓷板242之氣孔率或彎曲率、孔徑等,可 獲得前所未有的嶄新效果。 使用該實施形態之電解電鍍裝置進行3〇〇秒(2//m)的 電鑛處理時之電鍍液210中的銅離子濃度變化顯示於第43 f請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格⑵Q χ挪公髮) 57 312144 經濟部智慧財產局員工消費合作社印製 1221862 A7 -------- B7 _ ----- 五、發明說明(58 ) 圖。第43圖中,區域A係關於多孔陶瓷板242與基板w 間的電鍍室244内之電鍍液210的數據,區域b係關於陽 極板238與多孔陶瓷板242間的電鍍室246内之電鍵液21〇 的數據。 從第43圖可明瞭,區域a中,銅離子濃度係隨.著電錢 的進行而降低。該下降率與因電鍍而在基板表面上消耗的 鋼離子之理論值一致。另一方面,區域β t,相反地鋼離 子濃度會上升,而該上升率與陽極板所產生的鋼離子之理 論值一致。 由以上所述可知,在夾住多孔陶瓷板242之區域A(電 鑛室244)與區域B(電鍍室246)之間,幾乎不會發生鋼離 子交換,且多孔陶瓷板242會隔膜性地震動。換言之,陽 極側所引起的反應並不會影響到基板侧。 而且通常在進行鋼的電解電鍍時,必須對陽極特別注 意。第1,為了捕獲陽極所產生的一價銅離子,必須在陽 極表面开> 成所謂「黑膜」的膠質黑色膜體,因此陽極材料 係使用含磷銅。該黑色膜體可謂銅、磷、氣等的複合物, 但其具有只將二價銅離子送進電鍍液中,並捕獲導致電鍍 表面有異常析出等情況的一價銅離子之作用。 根據該實施形態之電鍍裝置,從第43圖可以明瞭,由 於在多孔陶瓷板242上下不會發生銅離子交換,因此不需 要再擔心上述問題。此外,銅製成的陽極板238有時也會 隨者電鑛的進行而電解消耗’以致其表面剝離,但該剝離 物可由多孔陶瓷板242捕獲,而不會附著於基板w之電鍍 I ---i — — — — — — ^«1 —--I I f請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 58 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(59 ) 表面。再者,亦可使用非溶解性的陽極,例如於鈦表面覆 蓋氧化錶的陽極,以取代溶解性的銅陽極。此種情況下, 在陽極表面雖然會產生大量氧氣,但該氧氣也不會到達基 板表面,因此可防止一部分電鍍膜剝離等的不當情形發 生。 如上所述,將適當物質以電傳導率小的物質導入於電 鍍液中,並使陽極與陰極分開而同樣地配置,也可獲得隔 膜效果。 第44圖顯示本發明再一其他實施形態之金的電解電 鍍裝置所適用之電解處理裝置,該電鍍裝置具有箱形電鍍 槽250’且該電鍍槽250之一方開口端係例如由在鈦基材 上塗覆有氧化銥之非溶解性陽極板252所封閉,另一方之 開口端則係由將基板保持於電鍍槽250側之蓋體254封 閉成可自由開閉。此外,在電鍍槽250之蓋體254側端部 設有:壓接於基板W,以防止電鍍液210由此流出之凸緣 狀密封材256、以及位於該凸緣狀密封材256外側,並與 基板W之導電層S接觸,以將陰極電位導入該基板w之接 點 258 〇 於電鍍槽250内部則有兩片隔膜260a、260b,係藉由 事先設在電鍍槽250之網狀物262a、2 62b保持而配置,以 隔開基板W與陽極板252。該隔膜260a、260b可使用例如 德山公司製CMS或杜邦公司製n-3 50等強酸性陽離子交換 膜。 藉此,於電鍵槽250内部劃分形成有面向基板w之電 -------------------^--------- C請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 59 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 ______B7___ 五、發明說明(60 ) 鍍室264、面向陽極板252之電解液室266、以及夾在隔膜 260a、260b間的高電阻電解液室268。此外,在上述各室 264、266、268中設有各自的液體循環路徑。 然後於電鍍室264導入例如以氰基化金鉀為基本材料 的電鍍液270,於電解液室266導入例如由硫酸水溶液 (80g/l)構成的電解液(電鍍液)272.,並以例如每分鐘20 公升之次數使其循環。於高電阻電解液室268則不會受到 電鍍處理的限制,而係導入例如稀硫酸水溶液(l〇g/l)構成 的電傳導率小的高電阻電解液274,以在此構成高電阻結 構體276。 如上所述,使於兩片隔膜260a、26 Ob所劃分的高電阻 電鍍液室268内填滿稀硫酸水溶液等高電阻電解液2 74所 構成的高電阻結構體276介存於電鍍液270、272之間,可 提高整個裝置之電鍍電阻,而大幅降低因導電層之電阻所 導致的基板面内之金電鍍膜之膜厚分布。而且在該例中, 可藉由改變稀硫酸液之濃度以任意選定電鍍裝置之電阻 值’並因應電鑛種類、基板狀況等而適當改變電鑛條件。 該電鑛裝置係在以蓋體254保持基板w並封閉該蓋體 2 54,而分別於電鍍室264導入電鍍液270,於電解液室266 導入電解液(電鍍液)272並使其循環,且於高電阻電解液 室268填滿高電阻電解液274的狀態下,使電錄電流從外 部電源(未圖示)流動於陽極板252及基板w上之導電層 S,藉此以形成電鑛膜’而產生於陽極板252表面之氧氣 278係與電解液(電鍍液)272 —同被排出至外部^ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ----------- 60 312144 --------^--------- C請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1221862 A7 B7 五、發明說明(61 ) 此外,在該實施形態中,也是可藉由將陽極板與基板 間的距離拉得非常地大,以提高電鍍液本身之電阻,而獲 得相同的效果,然而如此不僅會使裝置變大,且必須大量 使用昂貴的金電鍍用氰基化金鉀,因此工業上的不利較 多。 以上之實施形態係以圓盤狀之基板作為被處理基板, 但當然不限定於圓盤狀,例如矩形亦可。 根據該實施形態之電解處理裝置,可使透過高電阻結 構體而浸潰於電解液中的陽極與陰極間的電阻,較僅由電 解液構成之情形為高,以縮小被處理基板表面之電阻所導 致的電流密度之面内差,因此可更為提高電解處理時之被 處理基板之面内均一性。 【使用絕緣性構件作為電場狀態控制機構之實施形態】 第45圖係本發明再一其他實施形態之電解電鑛裝置 的概略構成圖。第45圖所示之電解電鍍裝置係採用所謂面 朝上方式之電解電鍍裝置,而基板^係向上載置於基板載 置台330上。基板W之週邊係抵接於形成環狀之凸緣狀密 封材334前端而成封閉狀態,且於其内側充滿電鍍液31〇。 而在位於基板W表面側之凸緣狀密封材334外側設置有接 觸於基板w表面之導電層,以施加陰極電位之接點336。 於基板w上方有圓板狀高電阻結構體340及圓板狀陽 極板338隔著預定間隙保持於保持構件332而設置。在此 於陽極板338中設有貫穿厚度方向之多數細孔339,於陽 極板338上則設置有將電鍍液分配並供給於前述各細孔 --------—--------^--------- C請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公愛) 61 312144 1221862 A7 ----— _B7____ 五、發明說明(62 ) 339之電鍍液導入管341。 高電阻結構體340在該實施形態係於多孔陶瓷板(例 如氣孔率20%、平均孔徑5〇 v ^,厚度為l〇mm之SiC製 成)342之内部含有電鍍液310而構成。而陽極板338係藉 由保持構件332及多孔陶瓷板342而完全覆蓋之構造。 該實施形態係於多孔陶瓷板(多孔物質)342外周側面 捲繞帶狀絕緣性構件350以將其包圍。該絕緣性構件350 之材質可例舉氟化橡膠之類的伸縮性材料。 而且’從電鍍液導入管341通過陽極板338之細孔 339,然後加壓供給於多孔陶瓷板34〇之電鍍液31〇係浸透 於多孔陶瓷板342内,同時從該下面排出。藉此,多孔陶 瓷板342内部、以及基板ff與多孔陶瓷板342間的空間便 可由電鍍液310所填滿。此外,電鍍液31〇之導入亦可從 凸緣狀密封材334與多孔陶瓷板342端面之間隙來進行。 此種情況下,便不需要電鍍液導入管341及陽極板338之 細孔339。 在此狀態下,於陽極板338與基板?間施加預定㈣ 而流通直流電流時,電鑛(例如銅電鍍)會逐漸向基板故之 整個導電層表面進行。根據該實施形態’由於在陽極板338 與基板w之間有多孔陶竟板342的存在,因此不容易如前 述’受到因基板界表面之與接點336距離的不同而使各部 =阻值相異之影響,而可於基板w之整個導電層表面進 行大致均一的電鑛(例如鋼電錢)。 然而,靠近接點336之外周部附 < 如、 ι____周邵附近部分卻有電流密度 本紙張尺度適用T國國家標準(CNS)A4規格⑵〇 χ 297公髮y οχ 312144 862 22Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 V. The stomata in the description of invention (53) will form a longer path from 2d to 3d. At the position of the porous ceramic plate 224 opposite to the central hole 214a of the anode plate 214, a plurality of through holes having a diameter of, for example, a twist are formed at a pitch of 5 mm. In addition, the porous ceramic plate 224 may be in close contact with the anode plate 214, or vice versa. By this, the substrate W is disposed downward on the upper part of the electric ore tank 212, and the electric liquid 210 is passed from the bottom of the plating tank 212 through the central hole 21 栳 of the anode plate 214 and the through hole 224a of the porous ceramic plate 224, and then sprayed upward. And the spray of the electroplating solution 210 is brought into contact with the lower surface (plating surface) of the substrate, and a predetermined voltage is applied from the plating power source 226 between the anode plate 214 (anode) and the conductive layer S (cathode) of the substrate ψ to the substrate #The plating film is formed below. At this time, the electric ore liquid 210 overflowing from the electric ore tank 212 is recovered by the electric ore liquid storage section 216. Using the electric mining device of this embodiment, the current density was set to 20 mA / cm2, and the distance B between the upper surface of the anode plate 214 and the lower surface of the substrate was 50 mm. When electrolytic copper plating was performed, a porous ceramic plate 224 was provided. Compared with the previous, the power supply voltage required for electroplating has increased by approximately 2V. This is because the porous ceramic plate 224 is provided with a resistive element having a conductivity lower than that of the plating solution 210. In other words, since the cross-sectional area of the plating tank 212 is about 300 cm2, the resistance of the high-resistance structure 222 becomes approximately 0.333 Ω, In the equivalent circuit shown in FIG. 40, the resistance Rp generated by the high-resistance structure 222 is added as a new resistance. In addition, in Fig. 40, the resistors R1 to R5 show the same resistance as that of the resistors R1 to R5 shown in Fig. 74. 312144 —---- Order --------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 A7 B7 V. Description of Invention (54) When the high-resistance structure Rp is generated by the high-resistance structure 222, the ratio of the resistance at the center of the substrate to the resistance at the periphery, that is, (R2 + rp + R3 + R4) / (R2 + Rp + R3 + R4 + R5) is close to 1. The influence of the resistance R5 of the conductive layer becomes negligible, so the in-plane difference in current density caused by the resistance on the surface of the substrate W can be reduced to improve the in-plane uniformity of the electric ore film. The resistance value of the high-resistance structure 222 is, for example, 0.01 Ω or more in the case of a 200 mm wafer, preferably in the range of 0.00 to 2 Ω, more preferably in the range of 0.03 to 1 Ω, and most preferably 0.05. To the range of 0.5. The resistance value of the high-resistance structure 222 is detected by the following steps. First, in the electroplating apparatus, a predetermined value of direct current (I) is passed between the two electrodes formed by the anode plate 214 and the substrate ff separated by a predetermined distance, and plating is performed, and the voltage (VI) of the direct current power source at this time is measured. Following the same electroplating device, a high-resistance structure with a predetermined thickness is arranged between the two electrodes, and direct current (I) of the same value is passed for electroplating, and the voltage (V2) of the direct current power supply at this time is measured. With this, the resistance value of the high-resistance structure can be obtained from Rp = (V2-Vl) / I. At this time, the purity of the copper constituting the anode plate is preferably 99.9% or more. On the other hand, the distance between the anode plate and the substrate formed by the substrate is preferably 5 to 25 mm in the case of a substrate having a diameter of 200 mm, and 15 to 75 mm in the case of a substrate having a diameter of 300 mm. In addition, the resistance R5 of the conductive layer S on the substrate W can be measured by a tester, or the resistance value between the periphery and the center of the substrate can be obtained by calculating the resistivity and thickness of the conductive layer S material. Fig. 41 shows the electroplating device (this embodiment example) provided with a high-resistance structure 222 made of a porous ceramic plate 224 and the electroplating device (a conventional example) without the structure, as described above, and For substrate -------- — — — — — — I ------ Order --------— ^ swi. C Please read the notes on the back before filling this page) Applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 issued) 54 312144 1221862 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (55) Plating on the substrate surface when the boundary surface is plated 臈Film thickness distribution. As can be seen from Fig. 41, in the electroplating apparatus of this embodiment, the thinning of the central portion of the substrate does not occur, and the electroplating can be performed uniformly. On the other hand, the resistivity of the plating solution is about 5.5 Ω · cm, and the cross-sectional area of the plating tank 212 is about 300 cm 2. Therefore, if the distance between the substrate W and the anode plate 214 is to be obtained to obtain the same effect, That is, when a resistance of approximately 0.333 Ω is transmitted to the plating solution 210, it must be separated by approximately 18 cm, which will increase the size of the device. In addition, although this embodiment shows an example in which a high-resistance structure is constituted by a ceramic plate made of alumina, it is understood that the same effect can be obtained by using silicon carbide ceramics of other materials. The porosity, pore diameter, and curvature of the pores can be appropriately selected depending on the purpose. For example, in this embodiment, a 1 mm through-hole is opened in the porous ceramic plate to promote the circulation of the electric mineral liquid, but it is not necessary when the pore size is large. In addition, as long as the gaseous ethylene is bundled into a fibrous shape and welded to each other, a flat plate having a large number of holes penetrating straight in the thickness direction can be obtained. Even if a high-resistance structure is formed with such a flat plate, polyethylene can also be used. Foams such as alcohol or fibers such as Teflon (trade name) are formed into woven or non-woven fabrics to form a resistive structure. Furthermore, the same effect can be obtained by combining this circuit or a conductor and an insulator, or a composite of two conductors. These high-resistance structures can be appropriately pretreated before being assembled in a plating apparatus. It is especially effective for pickling, degreasing, and cleaning with a plating solution or a component in a plating solution. Thickness and shape of high-resistance structure -----— — — — — — in —--- Order ---------. C Please read the notes on the back before filling this page) This paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 55 312144 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 A7 ------- B7______ 5. Description of the invention (56) The subject matter of the invention can of course be changed appropriately. In this embodiment, electrolytic plating is described. However, if the current direction is reversed, the device can be used directly and the polarity of the power supply can be reversed to perform electrolytic etching. In this case, the uniformity of etching can be improved. LSI's steel wiring is electroplated. Conventionally, it is reversed before and after electroplating. Electrolysis is used to perform electrolytic etching. For example, using this device, electroplating is performed at a current density of 20 mA / cm2 for 7.5 seconds to form a 50 nm copper plating film. Then reverse the polarity of the power supply and etch at a current density of 5mA / cm2 for 20 seconds to etch a 33nm steel plating film, and then perform the final plating, which can uniformly etch and indeed improve the embedding characteristics. Fig. 42 shows an electrolytic treatment apparatus applied to electrolytic plating according to still another embodiment of the present invention. This electroplating apparatus adopts a so-called face-up method, and the substrate W is placed on the substrate mounting table 230 in an upward direction, and, for example, a flange-shaped sealing material 234 made of Viton rubber is provided around the substrate W, and the flange is located on the flange. The sealing material 234 is outside and in contact with the conductive layer s of the substrate w so as to introduce the cathode electricity at the contact point 236 of the substrate W. The flange-shaped sealing material 234 has a height of, for example, 10 mm, and can hold the plating solution 21 °. A holder 232 is arranged above the substrate mounting table 230. A porous ceramic plate 242 constituting the anode plate 238 and the high-resistance structure 240 is held and fixed at a predetermined interval from the holder 232. The porous ceramic plate 242 is made of silicon carbide (SiC) with a porosity of 20%, an average pore diameter of 50 mm, and a thickness I of 10 mm in this example, and contains a liquid electrolyte to form a high resistance. Structure 240. The anode plate 238 has a structure completely covered with the holder 232 and the porous ceramic plate 242. In addition, the size of the porous ceramic paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public directors)-* ---- 56 312144 ----------------- 1 丨Order --------- (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 A7 __ B7 V. Description of Invention (57) The fascia board 242 is best Immerse the bath with other baths (not shown) in which the bath is stored. Between the upper surface of the substrate W and the lower surface of the porous ceramic plate 242, there is provided a first electric ore chamber 244 with a gap Si a of approximately 2ππη, and between the upper surface of the porous ceramic plate 242 and the lower surface of the anode plate 238, There is a second plating chamber 246 having a gap s2 of approximately 1.5 mm, and a plating solution 210 can be introduced into each of the aforementioned plating chambers 244 and 246. The method for introducing the plating solution 210 can be introduced from the gap between the flange-shaped sealing material 234 and the end face of the porous ceramic plate 242, or can be introduced into the back side of the porous ceramic plate 242 (the upper part through a through hole provided in the anode plate 238). ) Pressurized plating solution 21 and other methods. In addition, in this embodiment, the substrate W and the substrate mounting table 230, or the anode plate 238 and the porous ceramic plate 242 may be rotated during electrolytic plating. Using the plating device of this embodiment on the substrate W (plating surface) When the copper plating is performed and the film thickness of the copper plated copper is checked, the in-plane uniformity of the film thickness can be improved by providing the high-resistance structure 240 composed of the porous ceramic plate 242 in the same manner as in the previous embodiment. This embodiment has a structure in which the anode plate 238 is completely covered by the porous ceramic plate 242 and the holder 232, and the electrolytic liquid 210 is filled between the anode plate 238 and the porous ceramic plate 242. By appropriately selecting the porosity, curvature, and pore size of the porous ceramic plate 242, unprecedented new effects can be obtained. The copper ion concentration change in the electroplating solution 210 when the electroplating device of this embodiment is used for 300 seconds (2 // m) of the electroless ore treatment is displayed on page 43. f Please read the precautions on the back before filling in this page ) This paper size applies to China National Standard (CNS) A4 specifications ⑵Q χ Norwegian public issued) 57 312144 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1221862 A7 -------- B7 _ ----- V.发明 说明 (58) Figure. In FIG. 43, area A is data on the plating solution 210 in the plating chamber 244 between the porous ceramic plate 242 and the substrate w, and area b is about the key liquid in the plating chamber 246 between the anode plate 238 and the porous ceramic plate 242. 21〇 data. It is clear from Fig. 43 that in the region a, the copper ion concentration decreases with the progress of electricity. This decrease rate is consistent with the theoretical value of steel ions consumed on the substrate surface by plating. On the other hand, in the region βt, on the contrary, the steel ion concentration will increase, and the increase rate is consistent with the theoretical value of the steel ion generated by the anode plate. From the above, it can be seen that hardly any steel ion exchange occurs between the region A (electric ore chamber 244) and the region B (plating chamber 246) sandwiching the porous ceramic plate 242, and the porous ceramic plate 242 vibrates diaphragmically. . In other words, the reaction caused by the anode side does not affect the substrate side. In addition, special attention must be paid to the anode when electroplating steel. First, in order to capture the monovalent copper ions generated by the anode, a so-called "black film" colloidal black film body must be formed on the surface of the anode. Therefore, phosphorous copper is used as the anode material. This black film body can be called a compound of copper, phosphorus, gas, etc., but it has the function of sending only divalent copper ions into the plating solution and capturing the monovalent copper ions that cause abnormal precipitation on the plating surface. According to the electroplating apparatus of this embodiment, as is clear from Fig. 43, since copper ion exchange does not occur above and below the porous ceramic plate 242, there is no need to worry about the above-mentioned problems. In addition, the anode plate 238 made of copper is sometimes consumed electrolytically with the progress of the power mine, so that its surface is peeled off, but the peeled material can be captured by the porous ceramic plate 242 without being attached to the plating of the substrate w- -i — — — — — — — ^ «1 —-- II f Please read the notes on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 58 312144 1221862 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (59) Surface. Furthermore, instead of a soluble copper anode, a non-soluble anode, such as an anode covered with an oxidized surface on the surface of titanium, may be used. In this case, although a large amount of oxygen is generated on the surface of the anode, the oxygen does not reach the surface of the substrate, so that it is possible to prevent the occurrence of improper conditions such as peeling of a part of the plating film. As described above, it is also possible to obtain a separator effect by introducing a suitable substance into the plating solution as a substance having a small electric conductivity, and arranging the anode and the cathode separately. FIG. 44 shows an electrolytic treatment device applicable to a gold electroplating device according to still another embodiment of the present invention. The electroplating device has a box-shaped plating tank 250 'and one open end of the plating tank 250 is made of, for example, a titanium substrate. The insoluble anode plate 252 coated with iridium oxide is closed, and the open end of the other side is closed by a cover 254 that holds the substrate on the side of the plating tank 250 so that it can be opened and closed freely. In addition, a flange-shaped sealing material 256 which is crimped to the substrate W to prevent the plating solution 210 from flowing out, and a flange-shaped sealing material 256 located outside the flange-shaped sealing material 256 are provided on the side of the cover 254 of the plating tank 250. It is in contact with the conductive layer S of the substrate W to introduce the cathode potential to the contact point 258 of the substrate w. Inside the plating tank 250, there are two diaphragms 260a and 260b, which are provided in advance by a mesh 262a in the plating tank 250. 2 and 2 62b are arranged so as to separate the substrate W and the anode plate 252. As the separators 260a and 260b, for example, a strongly acidic cation exchange membrane such as CMS manufactured by Tokuyama Corporation or n-3 50 manufactured by DuPont Corporation can be used. Thereby, the electricity facing the substrate w is divided and formed inside the electric key groove 250 ------------------- ^ --------- CPlease read the back first Please pay attention to this page, please fill in this page) This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) 59 312144 1221862 Printed by A7 of Consumer Cooperatives of Intellectual Property Bureau of Ministry of Economic Affairs ______B7___ V. Description of Invention (60) A chamber 264, an electrolytic solution chamber 266 facing the anode plate 252, and a high-resistance electrolytic solution chamber 268 sandwiched between the separators 260a and 260b. Each of the chambers 264, 266, and 268 is provided with a respective liquid circulation path. Then, a plating solution 270 using, for example, gold potassium cyanide as a basic material is introduced into the plating chamber 264, and an electrolytic solution (plating solution) 272 consisting of a sulfuric acid aqueous solution (80 g / l) is introduced into the electrolytic solution chamber 266. Cycles at 20 liters per minute. The high-resistance electrolytic solution chamber 268 is not limited by the plating treatment, and a high-resistance electrolytic solution 274 having a low electrical conductivity, such as a dilute sulfuric acid aqueous solution (10 g / l), is introduced to form a high-resistance structure. Body 276. As described above, the high-resistance structure 276 composed of the high-resistance electrolytic solution 2 74 such as a dilute sulfuric acid aqueous solution is filled in the high-resistance plating solution chamber 268 divided by the two separators 260a and 26 Ob, and the plating solution 270, Between 272, the plating resistance of the entire device can be increased, and the film thickness distribution of the gold plating film on the substrate surface caused by the resistance of the conductive layer can be greatly reduced. Furthermore, in this example, the resistance value of the electroplating device can be arbitrarily selected by changing the concentration of the dilute sulfuric acid solution, and the power mining conditions can be appropriately changed according to the type of the power mining and the condition of the substrate. In the electric mining device, a substrate 254 is held by a cover 254 and the cover 254 is closed. A plating solution 270 is introduced into the plating chamber 264, and an electrolytic solution (plating solution) 272 is introduced into the electrolyte chamber 266 and circulated. And in a state where the high-resistance electrolytic solution chamber 268 is filled with the high-resistance electrolytic solution 274, a recording current flows from an external power source (not shown) on the anode plate 252 and the conductive layer S on the substrate w, thereby forming an electric current. The oxygen film 278 generated on the surface of the anode plate 252 and the electrolyte (electroplating solution) 272 —are discharged to the outside ^ This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm)- --------- 60 312144 -------- ^ --------- CPlease read the notes on the back before filling out this page) Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperative Printed 1221862 A7 B7 V. Description of the invention (61) In addition, in this embodiment, the same can be obtained by pulling the distance between the anode plate and the substrate very large to increase the resistance of the plating solution itself. Effect, however, this will not only make the device larger, but also must use a large amount of expensive cyano group for gold plating Gold potassium, so the more and more unfavorable on the industry. In the above embodiment, a disc-shaped substrate is used as the substrate to be processed, but it is of course not limited to a disc-shaped substrate, and for example, a rectangular shape may be used. According to the electrolytic processing device of this embodiment, the resistance between the anode and the cathode immersed in the electrolytic solution through the high-resistance structure can be made higher than when the electrolytic solution is composed only of the electrolytic solution, so as to reduce the resistance on the surface of the substrate to be processed. The resulting in-plane difference in current density can further improve the in-plane uniformity of the substrate to be processed during electrolytic processing. [Embodiment using an insulating member as the electric field state control mechanism] Fig. 45 is a schematic configuration diagram of an electrolytic power mining device according to still another embodiment of the present invention. The electrolytic plating apparatus shown in FIG. 45 is an electrolytic plating apparatus using a so-called face-up method, and the substrate ^ is placed on the substrate mounting table 330 in an upward direction. The periphery of the substrate W is in a closed state by abutting on the front end of a ring-shaped flange-shaped sealing material 334, and the inside thereof is filled with a plating solution 31 °. On the outside of the flange-shaped sealing material 334 on the surface side of the substrate W, there is provided a contact layer 336 which contacts the surface of the substrate w to apply a cathode potential. Above the substrate w, a disc-shaped high-resistance structure 340 and a disc-shaped anode plate 338 are held by a holding member 332 with a predetermined gap therebetween. Here, the anode plate 338 is provided with a plurality of fine holes 339 penetrating in the thickness direction, and the anode plate 338 is provided with a plating solution for distributing and supplying the aforementioned fine holes ------------ ---- ^ --------- CPlease read the notes on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) 61 312144 1221862 A7 ----— _B7____ 5. The plating solution introduction pipe 341 of the invention description (62) 339. The high-resistance structure 340 includes a plating solution 310 inside a porous ceramic plate (e.g., made of SiC with a porosity of 20%, an average pore diameter of 50 μm, and a thickness of 10 mm) 342 in this embodiment. The anode plate 338 is completely covered by the holding member 332 and the porous ceramic plate 342. In this embodiment, a band-shaped insulating member 350 is wound around the outer peripheral side surface of a porous ceramic plate (porous substance) 342 to surround it. The insulating member 350 may be made of a stretchable material such as fluorinated rubber. Furthermore, the electroplating solution introduction tube 341 passes through the pores 339 of the anode plate 338, and then the plating solution 31o supplied to the porous ceramic plate 34o is impregnated into the porous ceramic plate 342 and discharged from the lower surface. Thereby, the inside of the porous ceramic plate 342 and the space between the substrate ff and the porous ceramic plate 342 can be filled with the plating solution 310. The plating solution 31 may be introduced from the gap between the flange-shaped sealing material 334 and the end surface of the porous ceramic plate 342. In this case, the plating solution introduction pipe 341 and the pores 339 of the anode plate 338 are unnecessary. In this state, the anode plate 338 and the substrate? When a predetermined current is applied and a DC current is passed, the power ore (such as copper plating) will gradually be applied to the entire conductive layer surface of the substrate. According to this embodiment, 'the porous ceramic plate 342 exists between the anode plate 338 and the substrate w, so it is not easy to be affected by the difference between the boundary surface of the substrate and the distance from the contact point 336 as described above. The effect of the difference can be used to perform a substantially uniform power ore (such as steel electricity) on the entire conductive layer surface of the substrate w. However, near the contact point 336, there is a current density near the periphery, such as ι ____ Zhou Shao, but the current density is applicable to the national standard (CNS) A4 standard of this paper ⑵ 〇 297 publish y ο χ 312 144 862 22
五、發明說明(63 ) 變尚,以致電鑛膜厚比其他部分厚的傾向。 經濟部智慧財產局員工消費合作社印製 因此,該實施形態係於多孔陶瓷板342外周側面捲繞 絕緣性構件350 ,藉此如第45圖以虛線所示,阻止電流集 中於基板W外周部附近,並降低該電流密度,使其與朝向 基板W其他部分之電流密度大致相等。 第46圖係使用上述方法於基板w進行銅電鍍時之基板 w外周部分附近的鋼電鍍膜厚之測量結果顯示圖。如第46 圖所示,可知改變絕緣性構件35〇之寬度L(參照第45 圖)’基板ff外周部附近的銅電鍍膜厚會變化。亦即,寬度 L越長,基板外周部附近的電流密度越低,電鍍膜厚就 越薄。因此,使用具有所希望寬度L(例如L=4min)之絕緣性 構件350,可使基板W外周部附近的電鍍膜厚與其他部分 相同。如上所述,絕緣性構件35〇雖係由寬度L之長度來 調整多孔陶瓷板342外周側面之遮蔽面積者,但絕緣性構 件350不僅可從寬度L調整遮蔽面積,亦可於遮蔽物本身 進行開孔以調整遮蔽面積。 此外,本發明並非僅利用於將基板W外周部附近之電 鑛膜厚調整成與其他部分相同電鍍膜厚之情形。例如將基 板W外周部附近之電鍍膜厚調整成較其他部分為厚之情況 下,只要縮小絕緣性構件350之寬度L即可,反之只要放 大宽度L即可。換句話說,根據該實施形態,可將基板双 外周部附近之電鍍膜厚自由地控制成所希望的厚度。 第47圖係顯示本發明再一其他實施形態之圖面。該實 施形態中,與前述第45圖所示之實施形態的相異點係於多 11 --------^---------. C請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 63 312144 1221862 A7 B7 五、發明說明(64 ) 孔陶甍板342外周設置可動式筒狀絕緣性構件35〇a,以取 代帶狀絕緣性構件350。該絕緣性構件350a係設於絕緣性 構件保持具351下端。絕緣性構件保持具351係由未圖示 之上下動作驅動機構構成可上下自由動作。如上述構成 時’藉由上下移動絕緣性構件35〇a之位置,並改變與多孔 陶瓷板342之相對位置,以調整多孔陶瓷板342外周側面 之外露面積’可任意控制基板¥外周部附近之電流密度, 且可與第45圖所示之實施形態相同,任意地調整基板w 外周部附近之電鍍膜厚。 第48圖係顯示本發明再一其他實施形態之圖面。該實 施形態中,與前述第45圖所示之實施形態的相異點係於多 瓷板3 4 2外周側面本身以塗布或浸透絕緣材料的方式 5又置絕緣性構件350b,以取代帶狀絕緣性構件350。例如 於多孔陶瓷板342外周側面浸透玻璃及樹脂或矽等絕緣材 料而叹置絕緣性構件350b。此種情況下,藉由調節浸透 寬,及浸透深度分布,可任意控制基板?外周部附近之電 巍畨度’且可與第45圖所示之實施形態相同,任意地調整 f Μ外周部附近之電㈣厚。此外亦可藉由氧化一部分 土材(例如S i C )以控制電流密度。 【使用密封構件之實施形態】 員 工 消 費 多孔:二圖係與第45圖所示同樣構造之電解電鍍裝置之 = : = :周部分…部分概略圖。但在 + 第 料之絕緣性構件35G並未圖 丨不該電^鍵裝置中,保持構件332與多孔陶竟板犯 本紙張尺度剌 312144V. Description of the invention (63) The tendency is changed to make the thickness of the ore film thicker than other parts. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, this embodiment is formed by winding an insulating member 350 around the outer peripheral surface of the porous ceramic plate 342, thereby preventing the current from being concentrated near the outer periphery of the substrate W as shown by a dotted line in FIG. And reduce the current density to be substantially equal to the current density towards the other parts of the substrate W. Fig. 46 is a graph showing the measurement results of the thickness of a steel plating film near the outer peripheral portion of the substrate w when the substrate w is subjected to copper plating using the method described above. As shown in Fig. 46, it can be seen that changing the width L of the insulating member 35 (see Fig. 45) 'changes the thickness of the copper plating film near the outer peripheral portion of the substrate ff. That is, the longer the width L, the lower the current density near the substrate peripheral portion, and the thinner the plating film thickness. Therefore, by using the insulating member 350 having a desired width L (e.g., L = 4min), the thickness of the plating film near the outer peripheral portion of the substrate W can be made the same as that of the other portions. As described above, although the insulating member 35 can adjust the shielding area of the outer peripheral surface of the porous ceramic plate 342 by the length of the width L, the insulating member 350 can adjust the shielding area not only from the width L, but also from the shielding itself. Make holes to adjust the masking area. In addition, the present invention is not only used in the case where the thickness of the electroless film in the vicinity of the outer peripheral portion of the substrate W is adjusted to the same plating film thickness as the other portions. For example, when the thickness of the plating film near the outer peripheral portion of the substrate W is adjusted to be thicker than the other portions, the width L of the insulating member 350 may be reduced, and the width L may be increased otherwise. In other words, according to this embodiment, it is possible to freely control the thickness of the plating film near the outer periphery of the substrate to a desired thickness. Fig. 47 is a drawing showing still another embodiment of the present invention. In this embodiment, the difference from the embodiment shown in Figure 45 above is more than 11 -------- ^ ---------. CPlease read the precautions on the back first (Fill in this page again.) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 63 312144 1221862 A7 B7 V. Description of the invention (64) A movable cylindrical insulating member is set on the outer periphery of the hole ceramic plate 342 35〇a to replace the band-shaped insulating member 350. The insulating member 350a is provided at the lower end of the insulating member holder 351. The insulating member holder 351 is composed of an unillustrated up-and-down movement driving mechanism and is capable of freely moving up and down. In the above configuration, 'the position of the outer surface of the outer surface of the porous ceramic plate 342 can be arbitrarily controlled by moving the position of the insulating member 350a up and down and changing the relative position with the porous ceramic plate 342'. The current density is the same as the embodiment shown in FIG. 45, and the thickness of the plating film near the outer peripheral portion of the substrate w can be arbitrarily adjusted. Fig. 48 is a drawing showing still another embodiment of the present invention. In this embodiment, the point of difference from the embodiment shown in FIG. 45 is that the outer side surface of the multi-ceramic plate 3 4 2 is coated or impregnated with an insulating material 5 and an insulating member 350b is provided instead of a strip. Insulating member 350. For example, an insulating member 350b is impregnated with an insulating material such as glass, resin, or silicon impregnated on the outer peripheral surface of the porous ceramic plate 342. In this case, the substrate can be controlled arbitrarily by adjusting the penetration width and penetration depth distribution? The electric power around the outer peripheral portion can be adjusted arbitrarily to the thickness of the electric power in the vicinity of the outer peripheral portion fM, as in the embodiment shown in FIG. 45. It is also possible to control the current density by oxidizing a part of the soil material (for example, SiC). [Embodiment of using a sealing member] Staff consumption Porosity: The second figure is a schematic diagram of a part of the electrolytic plating device having the same structure as that shown in Figure 45: = around the part. However, in the + 35th insulating member 35G, which is not shown in the figure, the holding member 332 and the porous ceramic plate should not be included in the paper size 剌 312144.
I 1221862 A7 五、發明說明(65 ) 間的間隙為未密封狀態,因此如參 一 該保持構件332與多孔陶竟板342=所示’電鑛液會通過 . 42間的間隙部分,而從陽 極板338流出,以致形成電流之 太备、m々 路。該電流通路由於係 不會通過多孔陶瓷板342内部 ^ ^ 通路,所以電阻值低,因 而有可能使電流密度變高,以致無 附近之電錢臈厚變薄的控制。 ’土板W外周部 竟板因:*該實施形態係如帛5〇A圖所示,於前述多孔陶 2板342與保持構件332之間設置密封構件_,可防止 從該部分漏出’並且可控制基板w外周部附近之電 鑛膜厚形成較薄狀態。 字:卜且::施形態中之密封構件36°係形成剖面倒1 字开/狀’且係由絕緣物構成’因此同時具有第45圖所示之 絕緣性構件的功能。而且密封構件_係如第_圖之兮 剖面圖所示,亦可將密封住保持構件332與多孔陶竟板 下面所接觸的部分之環狀密封構件部36〇a、以及可發 f 45圖所示之帶狀絕緣性構件35〇相同功能之絕緣性構件 部36 0b以不同組件分別安裝而構成。 當然該密封構件360亦可適用於第45圖所示之 Π二亦即,將用來防止電鍍液從高電阻結構體340 外周側面與保持構件332之間漏出的密封構件%…他 各種實施形態之電場控制裝置制,可進行 場控制。 幻尾 ------------ΛΨ γ請先閱讀背面之注意事項再填寫本頁) —訂---------. 經濟部智慧財產局員工消費合作社印製 【在欲提高陽極與基板間之電流密度的部分設置中間未 在有高電阻結構體之部分的實施形態】 ^I 1221862 A7 V. The description of the invention (65) The gap between the two is in an unsealed state, so as shown in the retaining member 332 and the porous ceramic plate 342 =, the electric mineral fluid will pass through the gap portion between 42 and from The anode plate 338 flows out, so that a current is prepared, and a circuit is formed. Since the current path does not pass through the inner ceramic plate 342, the resistance value is low, so that the current density may be increased, so that there is no control of the thickness of the nearby electric power to be thin. 'The outer plate of the soil plate W is actually due to: * As shown in Fig. 50A, a sealing member _ is provided between the porous ceramic 2 plate 342 and the holding member 332 to prevent leakage from this portion' It is possible to control the thickness of the electric slag film near the outer periphery of the substrate w to form a thin state. The word: Bu and :: The sealing member 36 ° in the application form is formed with a cross-section of one letter / shape, and is made of an insulator. Therefore, it also has the function of an insulating member shown in FIG. 45. In addition, as shown in the cross-sectional view of the sealing member, the annular sealing member portion 36〇a that seals the portion of the holding member 332 that is in contact with the bottom of the porous ceramic plate, and the figure 45 can be issued. The illustrated band-shaped insulating member 350 has the same function as the insulating member portion 360b, and is configured by separately installing different components. Of course, the sealing member 360 can also be applied to the second member shown in FIG. 45, that is, the sealing member that will prevent the plating solution from leaking between the outer peripheral side of the high-resistance structure 340 and the holding member 332. The electric field control device system can perform field control. Phantom tail ------------ ΛΨ γ Please read the notes on the back before filling out this page) —Order ---------. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs [An embodiment in which a portion having a high-resistance structure is provided in a portion where the current density between the anode and the substrate is to be increased] ^
本紐尺度適用中國格⑵〇x297公楚) 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(66 ) 第51圖係再一其他實施形態之電解電鍍裝置之概略 構成圖。第51圖中係與第45圖所示之實施形態相異,不 於高電阻結構體340外周安裝絕緣性構件35〇,而係改變 高電阻結構體340本身之形狀以進行電鍍膜厚之控制。 第52A圖至第52D圖係第51圖所示之電解電鍍裝置所 使用的高電阻結構體340之俯視圖。亦即,該實施形態令 的尚電阻結構體340係例如多孔陶瓷板342,且係如第52A 圖所示使多孔陶瓷板342之外周形狀形成多角形,如第52B 圖所示每隔預定間隔設置開縫365,如第52c圖所示形成 波形(或齒輪形)。相對於此,陽極板338及基板w係如一 點鏈線所示形成圓形,因此於基板w外周附近會產生中 間沒有多孔陶瓷板342而僅有電鍍液31〇存在,且與陽極 板338相對向之部分,比起中間有多孔陶变板犯存在的 部分,陽極板338與基板flf間的電阻會降低,基板^卜周 部的電流密度會變高。所以若為這些實施形態時可利用 在欲將基板ff外周附近之電鍍膜厚形成㉟中央附近之電鍍 膜厚為厚的情況。 而欲將基板ff中央部分等’基板w外周部分以外之其 他部分的電鍍膜厚控制得較厚時,如第咖圖所示、 孔^板342内部設置孔366,以於陽極板咖與基板 間设置未存在有多孔陶瓷板342的部分即可。 此外於第51圖所示之電解電鍍裝置中,可旋 W,以於基板W整面進行均一膜厚之電 " w . ^ €蠼然而亦可取代基 之旋轉’在基板旋轉之同時旋轉保持構件挪側。 G氏張尺度適用中國_準(CNS)A4 :⑽χ挪公髮) W 312144 -------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 1221862 Α7 Β7 五、發明說明(67 ) 而所謂亦可旋轉基板W及/或保持構件332者並不限於第 51圖所示之實施例。 【於高電阻結構體之厚度具有分布狀態以作為電場狀態控 制方法之實施形態】 第53圖係本發明再一其他實施形態之電解電鍍裝置 的概略構成圖ρ在第53圖所示之電解電鍍裝置中係於高電 阻結構體340之厚度具有二次元分布狀態,藉以控制基板 W表面之電流密度形成所希望之分布狀態,而控制電鍍膜 厚。亦即該實施形態中,高電阻結構體340係例如多孔陶 瓷板342,使多孔陶瓷板342形成圓形,且中心部之厚度 較周邊部之厚度薄而構成。如上述構成時,可將中央部之 %極板338與基板W間的電阻值降低至比周邊部之電阻值 為低’因此如前所述,可將越靠近中心越薄的電鍍膜厚控 制成均一。 第54圖係使用厚度均一,且厚度具有第53圖所示之 分布狀態的多孔陶瓷板342,於基板W上進行電鍍時之電 鍍膜厚的測定值比較結果顯示圖。從第54圖可知,使用第 53圖所示之多孔陶瓷板342較能實現基板上之電鍍膜厚 的均一化。此外如第55圖所示,即使將第53圓所示之多 孔陶瓷板342形成相反的構造而設置,亦可獲得相同的效 果。 同樣地如第56圖所示,亦可將多孔陶瓷板342中央的 厚度形成較周邊部之厚度為厚,藉此使周邊部之電鍍膜厚 开>成較中央部為厚,且如第57圖所示,亦可於多孔陶瓷板 ^張尺度適用中國國家標準(CNS)A4規格(210 χ 297公爱) ------------9 C請先閱讀背面之注意事項再填寫本頁) 訂---------0. 經 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製This standard is applicable to Chinese standard 270x297.) 312144 1221862 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (66) Figure 51 is a schematic diagram of the electrolytic plating device in another embodiment. FIG. 51 is different from the embodiment shown in FIG. 45. The insulating member 35 is not installed on the outer periphery of the high-resistance structure 340, but the shape of the high-resistance structure 340 itself is changed to control the thickness of the plating film. . Figures 52A to 52D are top views of a high-resistance structure 340 used in the electrolytic plating apparatus shown in Figure 51. That is, the resistive structure 340 of this embodiment is, for example, a porous ceramic plate 342, and the outer peripheral shape of the porous ceramic plate 342 is formed into a polygon as shown in FIG. 52A, and at predetermined intervals as shown in FIG. 52B. Set the slit 365 to form a waveform (or gear shape) as shown in Figure 52c. In contrast, the anode plate 338 and the substrate w are formed in a circle as shown by a chain of dots. Therefore, near the periphery of the substrate w, there will be no porous ceramic plate 342 in the middle and only the plating solution 31 will be present. Compared with the portion where the porous ceramic plate is present in the middle, the resistance between the anode plate 338 and the substrate flf will be reduced, and the current density at the peripheral portion of the substrate will be higher. Therefore, in these embodiments, it is possible to use a case where the thickness of the plating film near the center of the substrate ff is to be thick and the thickness of the plating film near the center is thick. When it is desired to control the thickness of the plating film of the substrate ff, such as the central portion of the substrate, other than the peripheral portion of the substrate w, as shown in the figure, holes 366 are provided inside the hole plate 342 for the anode plate and the substrate. It is sufficient to provide a portion where the porous ceramic plate 342 does not exist. In addition, in the electrolytic electroplating device shown in FIG. 51, W can be rotated to perform uniform film thickness on the entire surface of the substrate W " w. ^ € 蠼 However, the rotation of the substrate can be rotated at the same time as the substrate is rotated. Keep the components moving. G's scale is applicable to China _ quasi (CNS) A4: ⑽χ Norwegian public hair) W 312144 ------------------- Order --------- ( Please read the precautions on the back before filling this page) 1221862 Α7 Β7 V. Description of the invention (67) The so-called rotating substrate W and / or holding member 332 is not limited to the embodiment shown in FIG. 51. [Implementation mode in which the thickness of the high-resistance structure has a distribution state as an electric field state control method] Fig. 53 is a schematic configuration diagram of an electrolytic plating apparatus according to still another embodiment of the present invention. Ρ The electrolytic plating shown in Fig. 53 The thickness of the high-resistance structure 340 in the device has a second-order distribution state, and the current density on the surface of the substrate W is controlled to form a desired distribution state, thereby controlling the thickness of the plating film. That is, in this embodiment, the high-resistance structure 340 is, for example, a porous ceramic plate 342, and the porous ceramic plate 342 is formed in a circular shape, and the thickness of the central portion is smaller than the thickness of the peripheral portion. With the above configuration, the resistance value between the% electrode plate 338 and the substrate W in the center portion can be reduced to a value lower than that in the peripheral portion. Therefore, as described above, the thickness of the plating film that is thinner toward the center can be controlled. Be uniform. Fig. 54 is a diagram showing a comparison result of measured values of electroplated film thicknesses when a porous ceramic plate 342 having a uniform thickness and a distribution state shown in Fig. 53 is used for plating on the substrate W. Figs. It can be seen from FIG. 54 that the use of the porous ceramic plate 342 shown in FIG. 53 makes it possible to uniformize the plating film thickness on the substrate. Further, as shown in Fig. 55, the same effect can be obtained even if the porous ceramic plate 342 shown in the 53rd circle is provided with an opposite structure. Similarly, as shown in FIG. 56, the thickness of the center of the porous ceramic plate 342 can be made thicker than the thickness of the peripheral portion, thereby making the plating film thickness at the peripheral portion thicker than the center portion, and as As shown in figure 57, the Chinese National Standard (CNS) A4 specification (210 x 297 public love) can also be applied to the porous ceramic plate ^ sheet scale. ------------ 9 C Please read the note on the back first (Please fill in this page for matters) Order --------- 0. Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs
1221862 五、發明說明(68 ) 342設置貫穿孔367,使設有貫穿孔367之部分的電鍍膜厚 較其他部分為厚。此外如第58圖所示,亦可藉由削薄周緣 部之厚度以將電阻降低至比其他部分為低,使多孔陶竟板 342之外周角部形成斜角形狀,藉此使基板ff外周附近之 電鍍膜厚比其他部分為厚。最主要係只要於高電阻結構體 340之厚度(也包含厚度=0)具有分布狀態,以將各部之電 鍍膜厚控制成所希望之厚度即可。 【於夕孔物質之氣孔構造具有分布狀態以作為電場狀態控 制方法之實施形態】 第59圖係本發明再一其他實施形態之電解電鑛裝置 的概略構成圖。在第59圖所示之電解電鍍裝置中係使用氣 孔構造具有二次元分布狀態或三次元分布狀態之多孔物質 (例如多孔陶瓷)342a作為高電阻結構體34〇。多孔物質 342a之保持於其内部之電鑛液的量及保持狀態係因氣孔 之孔徑及數量、排列狀態等而異,所以電阻值不同。因此 該實施形態係使中央附近之氣孔構造C1與外周附近之氣 孔構造C2不同,且使中央附近之氣孔構造ci形成低電阻。 如上述構成時,便可增加中央附近之電流密度而易於形成 該部分之電鍍。當然反之亦可使外周附近之氣孔構造C2 形成低電阻而構成,而增加外周附近之電鍍膜厚的厚度。 此外亦可使用三種以上之氣孔構造以進行更為複雜之電鍍 膜厚之控制。 於氣孔構造具有分布狀態之方法有如第59圖所示之 於多孔物質342a —體成形時具有分布狀態之方法、以及如 I------------------^« — — — — — 1 — C請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 68 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(69 第60A圖及第60B圖所示,分別形成多孔物質342a内之氣 孔構造之相異部分Cl、C2,然後藉由組裝而一體化之方 法。 氣孔構造之要素有氣孔孔徑(使直徑在例如5 〇至4 〇 〇 的範圍變化)、連績氣孔率(兩氣泡連結之程度…連結 者電阻值較小)、彎曲率(連結之氣孔的厚度方向之彎曲程 度···彎曲少者電阻值較小)等。 使氣孔構造不同的方法亦可例如使其材質本身相異 (例如樹脂系材料及陶瓷系材料等)。而控制多孔物質342a 之氣孔率分布之方法也有對多孔物質342a(在此為多孔陶 竟)之表面或内部之至少一部分進行封孔處理(使用樹脂及 矽烷醇系之塗布型絕緣膜,且使一部分基材之Si(:氧化等) 之方法。此外,亦有於一整面進行封孔處理後使一部分之 封孔部開孔,而改變面内之氣孔分布的方法。 而多孔物質342a之材料也有如第61A圖及第61B圖所 不之各向異性(anis〇trpy)構造材料。也就是第6U圖所示 之方向性多孔構造材料及第61β圖所示之纖維型多孔構造 材料等。構成這些各向異性構造材料之材質有樹脂及陶瓷 等。這些各向異性構造材料之氣孔係朝特定方向連結,以 使電流易於朝特定方向流動(電流並不易朝其他方向流 動),因而可提高電流密度之控制性。而且使用此各向異性 構造材料以使多孔物質342a中央附近之氣孔構造C1及外 周附近之氣孔構造C2不同,可將施加於基板ff表面之電流 密度形成所希望之分布狀態。 312144 --------訂---------^_wwi <請先閱讀背面之注意事項再填寫本頁) 1221862 A7 五、發明說明(70 ) 以上已說明本發明之實施形態,但本發明並不限定於 上述實施形態,而係可在申請專利範圍、說明書以及圖面 所記載之技術性思想的範圍内進行各種變形。此外,即使 係說明書及圖面上未直接記載之任何形狀及材質,只要可 發揮本發明申請案之作用、效果,即在本發明申請案之技 術性思想範圍内。 例如上述實施形態係顯示將本發明應用於所謂面朝上 方式之電解電鍍裝置之例,但亦可應用於第62圖所示之所 謂面朝下方式之電解電鑛裝置。亦即,該電解電鑛裝置係 以下述方式構成·具備用以保持電鑛液31〇之杯狀電鑛槽 312,且於該電鍍槽312之底部設置圓板形狀之陽極板 314’並於該陽極板314上設置圓板狀高電阻結構體324, 於電鍍槽312周圍配置用以回收從該電鏡槽上部溢出 之電鍍液310的電鍍液收容部316,再於設置在電錢槽312 上部之凸緣狀密封材318上方載置基板w,使接點32〇接 觸於基板W之下面外周。 此外,若一邊使電鍍液經由設在陽極板314中央之貫 穿孔314a及設在高電阻結構體340中央之小孔324a而循 環,一邊於陽極板314與基板間施加電壓而流通電流, 即可在基板W之下面形成電鍍層。 而且如前述各實施形態,於高電阻結構體外周設 置絕緣性構件,或改變厚度,或改變氣孔構造,可將形成 於基板W上之電鍍膜厚形成所希望之分布狀態。 又如第63圖所示,本發明亦可應用於密閉式電解電鍍 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 312144 ---------------------------- (請先閱讀背面之注意事項再填寫本頁) 1221862 經濟部智慧財產局員工消費合作社印製 A7 --------— B7___ 五、發明說明(71 ) ^ 裝置。亦即該電解電鍍裝置具有箱型電鍍槽35〇,且該電 鍍槽350之一方開口端係由陽極板352封閉,另一方開口 端則由保持基板tf於電鍍槽350側之蓋體354所封閉而# 成可自由開閉的狀態。在基板W與陽極板352之間則設置 有劃分形成由兩片網狀物362a、362b保持之兩片隔膜 360a、360b所夾住之高電阻電解液室368以作為高電阻社 構體376。 ^ 而且若分別將電鍍液370導入電鍍室364、將電解液 (電鑛液)導入電解液室366,並使之循環,同時於陽極板 352與基板W之間施加電壓而流通電流,即可在基板w逐 漸形成電鍍層。 而且如前述各實施形態,於高電阻結構體376之面上 設置絕緣性構件,或加工網狀物362a、362b之面,而改電 南電阻電解液室368之厚度等形狀,可將形成於基板w上 之電鍍膜厚形成所希望之分布狀態。 此外隔膜360a、360b之種類一般係使用強酸性陽離子 交換膜,例如德山公司製CMS及杜邦公司製n-350等,但 亦可改變陽離子的選擇性,而使用陰離子交換膜、非離子 交換膜。高電阻電解液室368中的電解質一般係(50至 200g/l )H2S〇4 ’但當然亦可選擇任意之濃度,且電解質不 限定於硫酸。 當然本發明亦可適用於其他各種構造之電解電鍍裝置 (包含面朝上、面朝下之任何方式)。此外上述各實施形態 係顯示將本發明應用於電解電鍍裝置之例,但亦可應用於 --------^--------- f讀先閲讀背面之注意事項再填寫本頁) 本紙張尺度適财目國家標準(CNS)A4規格(210 X 297公髮7 71 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 B7 _ 五、發明說明(72 ) 將基板當成陽極而進行之電解蝕刻裝置。 而且,上述各實施形態係顯示使用圓形基板作為被處 理基板’且所有電场刀布皆為同心圓狀者’但被處理基板 亦可為圓形以外之各種形狀,而電場分布亦可因應需要而 為非同心圓狀之分布。例如,被處理基板亦可使用LCD等 板狀(包含圓形以外之形狀)基板,而陰極接點336亦可非 為環狀而從某方向接觸被處理基板的形狀。此外陰極接點 336亦可接觸被處理基板外周以外之位置。 如上述,積極地控制被處理構件表面之電場狀態成為 所希望之狀態,可將被處理構件之電解處理所導致之處理 狀態形成目標之面内分布之處理狀態。 【於陽極板(電極)438之電解液導入孔(電鍍液導入 孔)439内部插入管體445之實施形態】 第64圖係本發明其他實施形態之電解電鑛裝置之概 略構成圖。亦即,該電解電鍍裝置係採用所謂面朝上方式 之電解電鍍裝置,其中,基板W係向上載置於基板載置台 430上,於基板W表面之周邊則有形成環狀之凸緣狀密封 材434前端與之抵接而形成為其所封閉之狀態。又在基板 W表面之凸緣狀密封材434外側設置有接觸於基板W表面 之導電層以施加陰極電位於基板W之接點436。於基板W 上方則有圓板狀多孔體440及圓板狀陽極板438隔著預定 間隔保持並設置於保持構件432。在此,於陽極板438設 有貫穿厚度方向之多數電鍍液導通孔439,陽極板438上 則設置有用以分配並供給電鍍液之電鍍液導入管441。 I— I — — — — — — II — — — — — — — ί請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 72 312144 1221862 A7 —-^---- 五、發明說明(73 ) 另一方面,多孔體440係由多孔陶瓷材料或多孔樹月旨 材料構成,本例之構成方式係由例如氣孔率2〇%、平均孔 徑50//m之SiC製成(當然亦可由其他各種材質構成,但以 孔徑20至300 //m、氣孔率10至95%者為佳),並於内部含 有電鍍液410而自我保持,且電氣雖然導通,但形成比電 鍍液410為小的電傳導率。而陽極板.438係由保持構件432 與多孔體440完全覆蓋之構造。 而在本實施形態中係於電鍍液導入管441本身設置與 其連通之管體445,並將該管體445插入陽極板438之電 鍍液導通孔439内,以使其前端抵接於多孔體440表面。 亦即於該實施形態中可使電鍍液410完全不接觸陽極板 438,而可供給多孔體440表面。該電鍍液導入管441及管 體445係由不受電鍍液而產生任何影響之材質的合成樹脂 一體形成。 此外,從電鍍液導入管441通過管體445直接供給多 孔體440表面之電鍍液係僅擴散於多孔體44〇内,並且到 達基板W表面,而在基板w與多孔體440之表面間形成複 數個圓形液柱R,複數個液柱r會在基板W上相互結合, 以逐漸於基板W上填滿滿電鍍液。 而且即使反覆該電鍍處理,管體445前端的内徑也不 會隨時間經過而擴張,因此理想的液柱R不會隨時間經過 而被破壞’所以不會因為液柱R之結合的混亂導致空氣捲 入’且氣泡不會堆積於多孔體44〇與基板W之間,不會導 致電鍍膜厚不平均。 ------------f ί請先閱讀背面之注意事項再填寫本頁) —訂--------- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 73 312144 12218621221862 V. Description of the invention (68) 342 is provided with a through hole 367, so that the plating film thickness of the portion provided with the through hole 367 is thicker than other portions. In addition, as shown in FIG. 58, the thickness of the peripheral portion can be reduced to reduce the resistance to be lower than other portions, so that the outer corner portion of the porous ceramic plate 342 can be formed into an oblique angle shape, thereby making the outer periphery of the substrate ff. The nearby plating film is thicker than the other parts. The most important thing is that the thickness of the high-resistance structure 340 (including the thickness = 0) is distributed to control the thickness of the electroplated film of each part to a desired thickness. [An embodiment in which the pore structure of the Yuxi pore material has a distributed state as a method for controlling an electric field state] Fig. 59 is a schematic configuration diagram of an electrolytic power mining device according to still another embodiment of the present invention. In the electrolytic plating apparatus shown in Fig. 59, a porous substance (for example, porous ceramic) 342a having a pore structure having a two-dimensional distribution state or a three-dimensional distribution state is used as the high-resistance structure body 34. The amount and holding state of the electric mineral liquid held in the porous substance 342a are different depending on the pore diameter, number, and arrangement state of the pores, so the resistance value is different. Therefore, in this embodiment, the stomata structure C1 near the center is different from the stomata structure C2 near the outer periphery, and the stomata structure ci near the center has a low resistance. With the above configuration, the current density near the center can be increased, and the plating of the portion can be easily formed. Of course, conversely, the pore structure C2 near the outer periphery can be formed with low resistance, and the thickness of the plating film near the outer periphery can be increased. In addition, more than three kinds of pore structures can be used for more complicated plating film thickness control. The method of having a distribution state in the stomata structure is as shown in Fig. 59. The method of having a distribution state in the forming of the porous material 342a as shown in Figure 59, and I ------------------ ^ «— — — — — 1 — C Please read the notes on the back before filling out this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297 mm) ) 68 312144 1221862 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (69 As shown in Figure 60A and Figure 60B, the different parts Cl and C2 of the pore structure in the porous substance 342a are formed respectively, and then borrowed The method of integration by assembly. The elements of the stomata structure include the pore diameter (to change the diameter in the range of, for example, 50 to 400), the continuous porosity (the degree of connection between two bubbles ... the resistance value of the connector is small), Bending rate (the degree of bending in the thickness direction of the connected pores ... the smaller the resistance, the smaller the resistance value), etc. The method of making the pore structure different can also make the material itself different (such as resin-based materials and ceramic-based materials, etc.) ) The method for controlling the porosity distribution of the porous substance 342a also includes sealing the surface or at least a part of the porous substance 342a (here, porous ceramics) (using a resin and a silanol-based coating-type insulating film, and A method for Si (partial oxidation) of a part of a substrate. In addition, there is also a method of changing a pore distribution in the surface by opening a part of the sealing portion after performing sealing treatment on the entire surface. The porous material 342a The materials also include anisotropic structure materials as shown in Figure 61A and 61B. They are directional porous structure materials shown in Figure 6U and fibrous porous structure materials shown in Figure 61β. The materials that make up these anisotropic structural materials include resins and ceramics. The pores of these anisotropic structural materials are connected in a specific direction to make it easy for the current to flow in a specific direction (the current does not easily flow in other directions). Improve the controllability of current density. And use this anisotropic structure material to make the pore structure C1 near the center of the porous substance 342a and the pore structure near the periphery. Different from C2, the current density applied to the surface of the substrate ff can be formed into a desired distribution state. 312144 -------- Order --------- ^ _ wwi < Please read the precautions on the back first Fill out this page again) 1221862 A7 V. Description of the invention (70) The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, but is a technology that can be described in the scope of patent applications, specifications and drawings. Various modifications can be made within the scope of sexual thinking. In addition, even if it is any shape and material not directly described in the description and drawings, as long as the function and effect of the application of the present invention can be exerted, it is within the scope of the technical idea of the present application. Inside. For example, the above embodiment shows an example in which the present invention is applied to an electrolytic plating apparatus of a so-called face-up method, but it can also be applied to an electrolytic power ore apparatus of a so-called face-down method shown in FIG. 62. That is, the electrolytic power mining device is configured and provided with a cup-shaped power ore tank 312 for holding the power ore liquid 31 °, and a circular plate-shaped anode plate 314 ′ is provided at the bottom of the electroplating tank 312. A circular plate-shaped high-resistance structure 324 is provided on the anode plate 314, and a plating solution storage portion 316 for recovering the plating solution 310 overflowing from the upper part of the electron microscope tank is arranged around the plating tank 312, and then disposed on the upper part of the electric money tank 312 The substrate w is placed above the flange-shaped sealing material 318 so that the contacts 32 are in contact with the outer periphery of the lower surface of the substrate W. In addition, if the plating solution is circulated through the through hole 314a provided in the center of the anode plate 314 and the small hole 324a provided in the center of the high-resistance structure 340, a voltage may be applied between the anode plate 314 and the substrate to flow a current. A plating layer is formed under the substrate W. Furthermore, as in the foregoing embodiments, by providing an insulating member on the outer periphery of the high-resistance structure, or changing the thickness, or changing the pore structure, the plating film thickness formed on the substrate W can be formed into a desired distribution state. As shown in FIG. 63, the present invention can also be applied to closed electrolytic plating. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 312144 ------------ ---------------- (Please read the precautions on the back before filling this page) 1221862 Printed A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ B7___ V. Description of the Invention (71) ^ Device. That is, the electrolytic plating device has a box-shaped plating bath 35, and one open end of the plating bath 350 is closed by the anode plate 352, and the other open end is closed by a cover 354 that holds the substrate tf on the plating bath 350 side. And # can be opened and closed freely. Between the substrate W and the anode plate 352, a high-resistance electrolyte chamber 368 sandwiched by two separators 360a and 360b held by two meshes 362a and 362b is provided as a high-resistance structure 376. ^ If the plating solution 370 is introduced into the plating chamber 364, the electrolytic solution (electrical liquid) is introduced into the electrolytic solution chamber 366, and the circulation is performed, and a voltage is applied between the anode plate 352 and the substrate W to flow a current. A plating layer is gradually formed on the substrate w. In addition, as in the foregoing embodiments, an insulating member is provided on the surface of the high-resistance structure 376, or the surface of the mesh 362a, 362b is processed, and the shape of the thickness and the like of the electric resistance electrolyte chamber 368 can be formed on The plating film thickness on the substrate w is formed in a desired distribution state. In addition, the types of membranes 360a and 360b generally use strongly acidic cation exchange membranes, such as CMS manufactured by Tokuyama Corporation and n-350 manufactured by DuPont. However, the selectivity of cations can also be changed, and anion exchange membranes and non-ion exchange membranes can be used. . The electrolyte in the high-resistance electrolytic solution chamber 368 is generally (50 to 200 g / l) H2SO4 ', but of course, any concentration can be selected, and the electrolyte is not limited to sulfuric acid. Of course, the present invention can also be applied to other electroplating devices of various structures (including any method of face-up and face-down). In addition, the above embodiments show examples in which the present invention is applied to an electrolytic plating device, but it can also be applied to -------- ^ --------- f Read the precautions on the back before reading (Fill in this page) National paper standard (CNS) A4 specifications (210 X 297 public 7 7 312 144 1221862 printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives printed A7 B7 _ 5. Description of the invention as a substrate Electrolytic etching device for anode. In addition, each of the above embodiments shows that a circular substrate is used as the substrate to be processed, and all electric field cutting tools are concentric circles. However, the substrate to be processed may be various other than circular. Shape, and the electric field distribution can be non-concentric circular distribution according to the needs. For example, the substrate to be processed can also use a plate-like substrate (including shapes other than circular) such as LCD, and the cathode contact 336 can also be non-circular. Shape and contact the substrate to be processed from a certain direction. In addition, the cathode contact point 336 may also contact a position other than the outer periphery of the substrate to be processed. As described above, the state of the electric field on the surface of the member to be processed is actively controlled to a desired state. [Processing state in which the processing state caused by the electrolytic treatment of the member to be treated is distributed in the target surface.] [The embodiment of inserting the pipe body 445 into the electrolyte introduction hole (electrolytic solution introduction hole) 439 of the anode plate (electrode) 438] [64] FIG. 64 is a schematic configuration diagram of an electrolytic power smelting device according to another embodiment of the present invention. That is, the electrolytic plating device is an electrolytic plating device using a so-called face-up method, in which the substrate W is placed on the substrate. On the setting table 430, a ring-shaped flange-shaped sealing material 434 is formed on the periphery of the surface of the substrate W in contact with the front end of the flange-shaped sealing material 434. The flange-shaped sealing material 434 is provided outside the surface of the substrate W There is a conductive layer in contact with the surface of the substrate W to apply cathode electricity to a contact 436 on the substrate W. Above the substrate W, a disc-shaped porous body 440 and a disc-shaped anode plate 438 are held and arranged on a holding member at predetermined intervals. 432. Here, the anode plate 438 is provided with a plurality of plating solution through holes 439 penetrating in the thickness direction, and the anode plate 438 is provided with a plating solution introduction pipe 441 for distributing and supplying the plating solution. I— I — — — — — — II — — — — — — — Please read the notes on the reverse side before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 72 312144 1221862 A7 --- ^ ---- 5. Description of the invention (73) On the other hand, the porous body 440 is composed of a porous ceramic material or a porous tree material. The constitution of this example is, for example, a porosity of 20%. SiC with an average pore size of 50 // m (Of course, it can also be composed of various other materials, but it is better to have a pore size of 20 to 300 // m and a porosity of 10 to 95%). It is maintained, and although it is electrically conductive, it has a smaller electrical conductivity than the plating solution 410. The anode plate .438 is completely covered by the holding member 432 and the porous body 440. In this embodiment, a plating body 445 is provided on the plating solution introduction pipe 441 itself, and the pipe body 445 is inserted into the plating solution through hole 439 of the anode plate 438 so that the tip thereof abuts the porous body 440. surface. That is, in this embodiment, the plating solution 410 can be prevented from contacting the anode plate 438 at all, and the surface of the porous body 440 can be supplied. The plating solution introduction pipe 441 and the pipe body 445 are integrally formed of a synthetic resin made of a material that is not affected by the plating solution. In addition, the plating solution directly supplied to the surface of the porous body 440 from the plating solution introduction pipe 441 through the pipe body 445 diffuses only within the porous body 44 and reaches the surface of the substrate W, and a plurality is formed between the substrate w and the surface of the porous body 440 A plurality of circular liquid columns R, and a plurality of liquid columns r will be combined with each other on the substrate W to gradually fill the substrate W with a plating solution. And even if this electroplating process is repeated, the inner diameter of the front end of the tube 445 will not expand with time, so the ideal liquid column R will not be destroyed with time 'so it will not be caused by the confusion of the combination of the liquid column R Air is entrapped, and bubbles do not accumulate between the porous body 44 and the substrate W, which does not cause uneven plating film thickness. ------------ f ί Please read the precautions on the back before filling out this page) —Order --------- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 73 312144 1221862
經濟部智慧財產局員工消費合作社印製 五、發明說明(74 ) 第65圖係本發明又一其他實施形態之電解電鍍裝置 之概略構成圖。該電解電鍍裝置中,與前述第64圖所示實 施形態之相異點在於··並非於電鍍液導入管441形成與其 一體之管445,而係於陽極板438之電鍍液導通孔439内 插入另外製作之管體447。此時也是使管體447由不會受 到電鍍液任何影響之材質構成,並使其前端(下端)抵接於 多孔體440上面。 如上述構成時,與第64圖所示之實施形零相同,電鍍 液也不會直接接觸陽極板438,儘管反覆進行電鍍處理, 管體447前端的内徑也不會隨時間經過而擴張。因此,從 多孔體440供給之液柱R不致隨時間經過而被破壞,而可 經常保持在理想狀態而不會發生空氣捲入之情形。 【於多孔體440内設置電解液通路部之實施形態】 第66圖係本發明另一其他實施形態之電解電鍍裝置 之概略構成圖。該電解電鍍裝置係不設置第64圖所示之電 鑛液導入管441,而藉由保持構件432保持陽極板438及 多孔體440 (440 a、440b)。而且在陽極板438與多孔體440 之間設有液體儲存部450。亦即,於陽極板438係不設置 第64圖所示之複數條微細電鍍液導通孔439,而係於其中 央設置一個粗的電鍍液供給部455。 另一方面,多孔體440係重疊其上下兩構件(上部多孔 體440a及下部多孔體440b)而構成。而且在上部多孔體 44Ga設有複數條通至上下面之微細電解液通路部457。該 電解液通路部457係形成以低密度(氣孔率高)之氣孔構 ---------I — · 1111 丨 I c請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公愛) 74 312144 1221862Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (74) Figure 65 is a schematic configuration diagram of an electrolytic plating device according to yet another embodiment of the present invention. The difference between this electrolytic plating device and the embodiment shown in FIG. 64 is that instead of forming a tube 445 integral with the plating solution introduction tube 441, it is inserted into the plating solution through hole 439 of the anode plate 438 Another tube body 447 is produced. At this time, the tube body 447 is also made of a material that is not affected by the plating solution, and its front end (lower end) is in contact with the porous body 440. When configured as described above, the plating solution does not directly contact the anode plate 438 in the same manner as in the zero embodiment shown in FIG. 64. Although the plating process is repeatedly performed, the inner diameter of the front end of the tube body 447 does not expand over time. Therefore, the liquid column R supplied from the porous body 440 is not destroyed as time elapses, and can be kept in an ideal state without air entrainment. [Embodiment in which electrolyte passage portion is provided in porous body 440] Fig. 66 is a schematic configuration diagram of an electrolytic plating apparatus according to another embodiment of the present invention. This electrolytic plating apparatus is not provided with the electrolyzed liquid introduction pipe 441 shown in Fig. 64, and the anode plate 438 and the porous body 440 are held by the holding member 432 (440a, 440b). A liquid storage portion 450 is provided between the anode plate 438 and the porous body 440. That is, the anode plate 438 is not provided with a plurality of fine plating solution vias 439 as shown in Fig. 64, and a thick plating solution supply portion 455 is provided at the center thereof. On the other hand, the porous body 440 is formed by overlapping two members (the upper porous body 440a and the lower porous body 440b). Further, the upper porous body 44Ga is provided with a plurality of fine electrolyte passage portions 457 which pass to the upper and lower surfaces. The electrolyte passage part 457 forms a pore structure with a low density (high porosity) --------- I — · 1111 丨 I c Please read the precautions on the back before filling this page) This paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 public love) 74 312144 1221862
五、發明說明(75 ) 經濟部智慧財產局員工消費合作社印製 構成成為電解液通路部457之部分,並使除此之外之部分 以鬲密度之氣孔構造構成。此外,下部多孔體44〇b係使其 全體由低密度之氣孔構造構成。 如上述構成,並且從陽極板438之電鍍液供給部455 供給電鍍液時,電鍍液410首先會充滿於液體儲存部45〇, 然後主要通過低電阻之電解液通路部457到達下部多孔體 440b之表面’接著擴散於下部多孔體44〇b之内部而到達 基板W表面’並於基板w與下部多孔體440b之表面間形成 複數個圓形液柱R,複數個液柱r會相互結合,以在基板w 上結合並排除空氣,同時於基板W上填滿電鍍液。 而且’即使反覆進行該電鍍處理,電解液通路部457 前端之内徑也不會隨時間經過而擴張,因此理想的液柱R 不會隨時間經過而被破壞,因而不會發生因為液柱r之結 合的混亂導致空氣捲入之情形,且氣泡不會堆積在下部多 孔體44 Ob與基板W之間,不會導致電鑛膜厚不平均。 第67圖係本發明又一實施形態之電解電鑛裝置之概 略構成圖。該電解電鍍裝置中,與前述第66圖所示實施形 態之相異點僅在於多孔體440之構造。亦即,該多孔體440 係於其内部設置由孔構成的電解液通路部459。該電解液 通路部459係由設在多孔體440上面中央之主通路461分 支成多數條而形成。各電解液通路部459之前端係結束於 多孔體440内部。 而且,從陽極板438之電鍍液供給部455供給電鍍液 時,電鍍液410首先會充滿在液體儲存部450,然後從多 ---------------------------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 75 312144 1221862 經濟部智慧財產局員工消費合作社印製 A7 ___B7__ 五、發明說明(76 ) 孔體440之主通路461導入各電解液通路部459,再從其 下端擴散於多孔體440内部並到達基板W表面,於基板w 與多孔體440之表面間形成複數個圓形液柱r,且複數個 液柱R會互相結合,而在基板W上結合並逐漸於基板上 填滿電鍍液。 而且,即使反覆進行該電鍍處理,電解液通路部459 前端之内徑也不會因為時間經過而擴張,因此理想的液柱 R不會因為時間經過而逐漸被破壞,所以不會發生因為液 柱R之結合的混亂而導致空氣捲入之情形,而且氣泡不會 堆積於多孔體440與基板W之間,以致電鍍膜厚不平均。 此外,藉由調整電解液通路部459前端(底面)之位 置’可縮短從電解液通路部459前端至多孔體440下面之 距離’藉此可減少電鍍液通過多孔體440時之電阻,所以 即使在使用厚度較厚的多孔體44〇或密度較高的多孔體 440的情形下,也可縮小液體擴散時之電鍍液通過多孔體 440的電阻,結果便會從多孔體44〇之預定位置流出適量 的電錢液。因此,從這方面來看,也不會發生因為液柱R 之結合的混亂導致空氣捲入之情形,而且氣泡不會堆積於 多孔體440與基板w之間,以致電鍍膜厚不平均。 再者’於該多孔體440形成由孔構成的電解液通路部 459並不容易,因此亦可製作以第67圖所示之a、B線分 割為上下三個部分者,並將其接合固定而一體化構成多孔 體 440 〇 丨丨--丨丨丨·丨丨丨I丨丨—訂-!丨!丨—- ϋ請先閱讀背面之注意事項再填寫本頁) 【於陽極板438之電鍍液導入孔(電解液導入孔)439内部V. Description of the invention (75) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. It constitutes the part of the electrolyte passage part 457, and the other parts are constructed with a dense pore structure. In addition, the lower porous body 44ob has a low-density pore structure as a whole. As described above, when the plating solution is supplied from the plating solution supply section 455 of the anode plate 438, the plating solution 410 is first filled in the liquid storage section 45, and then mainly reaches the lower porous body 440b through the low-resistance electrolyte passage section 457. The surface 'then diffuses inside the lower porous body 44b and reaches the surface of the substrate W', and a plurality of circular liquid columns R are formed between the substrate w and the surface of the lower porous body 440b, and the plurality of liquid columns r will be combined with each other to The substrate w is combined with the air, and the substrate W is filled with a plating solution. Moreover, even if this plating process is repeated, the inner diameter of the front end of the electrolyte passage portion 457 does not expand with time, so the ideal liquid column R will not be destroyed with time, so no liquid column r will occur. The confusion of the combination leads to the situation that air is entrained, and bubbles do not accumulate between the lower porous body 44 Ob and the substrate W, which does not cause uneven thickness of the electric deposit film. Fig. 67 is a schematic configuration diagram of an electrolytic power mining device according to another embodiment of the present invention. This electrolytic plating apparatus differs from the embodiment shown in Fig. 66 only in the structure of the porous body 440. That is, the porous body 440 is provided with an electrolyte passage portion 459 including pores inside the porous body 440. The electrolyte passage portion 459 is formed by branching a plurality of main passages 461 provided in the center of the upper surface of the porous body 440 into a plurality of passages. The front end of each electrolyte passage portion 459 ends inside the porous body 440. In addition, when the plating solution is supplied from the plating solution supply section 455 of the anode plate 438, the plating solution 410 is first filled in the liquid storage section 450, and then from ------------------ ---------- (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 75 312144 1221862 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employee consumer cooperative A7 _B7__ V. Description of the invention (76) The main passage 461 of the hole body 440 is introduced into each electrolyte passage portion 459, and then diffuses from the lower end inside the porous body 440 and reaches the surface of the substrate W, and the substrate w and the porous surface A plurality of circular liquid columns r are formed between the surfaces of the body 440, and the plurality of liquid columns R are combined with each other, and are combined on the substrate W and gradually fill the substrate with a plating solution. In addition, even if the plating process is repeatedly performed, the inner diameter of the front end of the electrolyte passage portion 459 does not expand due to the passage of time. Therefore, the ideal liquid column R is not gradually destroyed due to the passage of time. The confusion of the combination of R causes air to be entangled, and bubbles do not accumulate between the porous body 440 and the substrate W, so that the plating film thickness is uneven. In addition, by adjusting the position of the front end (bottom surface) of the electrolyte passage portion 459, the distance from the front end of the electrolyte passage portion 459 to the bottom of the porous body 440 can be shortened, thereby reducing the resistance when the plating solution passes through the porous body 440. When a thicker porous body 44 or a denser porous body 440 is used, the resistance of the plating solution through the porous body 440 when the liquid diffuses can also be reduced, and as a result, it will flow out from the predetermined position of the porous body 44. The right amount of money. Therefore, from this point of view, there is no case where air is entangled due to the confusion of the liquid column R, and bubbles do not accumulate between the porous body 440 and the substrate w, so that the thickness of the plating film is not uniform. Furthermore, it is not easy to form an electrolyte passage portion 459 made of pores in the porous body 440. Therefore, it is also possible to make one divided into three parts above and below the line a and B shown in FIG. And the integration constitutes a porous body 440 丨 丨-丨 丨 丨 丨 丨 丨 I 丨 丨 --Order-! 丨!丨 —- ϋPlease read the precautions on the back before filling in this page) [In the plating solution introduction hole (electrolyte introduction hole) 439 of the anode plate 438
1221862 經濟部智慧財產局員工消費合作社印製 A7 一 ------- B7 五、發明說明(77 ) 插入管體,同時於多孔體44〇内設置電解液通路部之 實施形態】 第68圖係本發明復一實施形態之電解電鍍裝置之概 略構成圖。該電解電鍍裝置中係與第64圖所示之實施形態 相同,於合成樹脂製成(電鍍液無法侵入之材質製成)的電 鍍液導入管441本身設置與其連通之管體445,並於陽極 板438之電鍍液導通孔439内插入該管體445,而使其前 端抵接多孔體440表面,同時於多孔體44〇抵接於管體445 之部分設置不貫穿的細長形孔構成之電解液通路部459。 而且,從電鍍液導入管441通過管體445,直接供給 於多孔體440之電解液通路部459内之電鍍液係從電解液 通路部459底面慢慢擴散並浸透於多孔體44〇内,而到達 基板W表面,於基板W與多孔體440之表面間形成複數個 圓形液柱R,而複數個液柱R會相互在基板w上結合,並 將空氣從基板W上推出而填滿電鑛液。 而且,即使反覆進行該電鍍處理,管體445前端之内 徑與電解液通路部459底面之内徑也不會因為時間經過而 擴張,因此理想的液柱R不會因為時間經過而被破壞,所 以不會發生因為液柱R之結合的混亂而導致空氣捲入之情 形,且氣泡不會堆積於多孔體440與基板w之間,不會導 致電鍍膜厚不平均。 同時,由於僅以設置電解液通路部459之長度份量減 少電鍍液通過多孔體440内時之通過電阻,因此即使使用 厚度較厚的多孔體440或密度較高(氣孔率低)的多孔 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ^------ 77 312144 -I I I I-----I — — — — — — — II ^ · — I----- ί請先閱讀背面之注意事項再填寫本頁) 1221862 五、發明說明(π ί請先閱讀背面之注意事項再填寫本頁) 440,於液體擴散時亦可使適量的電鍍液從多孔體44〇之預 疋位置流出,從該方面來看,也不會發生因為液柱{^之結 合的混亂而導致空氣捲入之情形,且氣泡不會堆積在多孔 體440與基板ff之間,不會導致電鍍膜厚不平均。 第69圖係本發明又一實施形態之電解電鍍裝置之概 略構成圖。該電解電鍍裝置中,與前述第68圖所示實施形 態之相異點在於:並非於電鍍液導入管441設置與其形成 一體之管體445,而於陽極板438之電鍍液導通孔439與 设在多孔體440之電解液通路部459内插入另外製作的管 體447。此種情況下,也是以不會使管體447受到電鍍液 任何影響的材質構成。 經濟部智慧財產局員工消費合作社印製 如上述構成時,亦可與第68圖所示之實施形態相同, 即使反覆進行電鍍處理,管體447前端之内徑也不會因為 時間經過而擴張,因而理想的液柱R不會因為時間經過而 被破壞,所以不會發生因為液柱r之結合的混亂導致空氣 捲入之情形,且氣泡不會堆積於多孔體440與基板W之間, 不會導致電鍍膜厚不平均。同時,管體447係插入多孔體 440内,因此電鍍液通過多孔體440時電阻會減少,即使 使用厚度較厚之多孔體440或密度較高(氣孔率低)之多孔 體440,也可由多孔體440之預定位置供給適量的電錢液, 因此不會發生因為液柱R之結合的混亂而導致空氣捲入之 情形,且氣泡不會堆積於多孔體440與基板W之間,不會 導致電鍍膜厚不平均。 【因應多孔體440之部位而使電鍍液通過多孔體440之通 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 78 312144 1221862 A7 五、發明說明(79 ) 過電阻不同的實施形態】 第70圖係本發明另一實施形態之電解電鍍裝置之概 略構成圖。該電解電鍍裝置與第64圖所示之實施形態相 同’係於合成樹脂製成的電鍍液導入管441本身設置與其 連通之管體445,但與第64圖不同的是,該裝置係使陽極 板438侧突出於陽極板438與多孔體44〇之接合面中央, 並使多孔體440側形成凹陷形狀。如上述構成時,從中央 附近之管體445供給之電鍍液會以少量通過電阻從多孔體 440下面供給,因此其供給量比其他部分多。換言之,由 於設置部位的不同而使所希望之電鍍液無法流出之情形 下,係縮小該部分之多孔體440之電鍍液通過電阻,使所 希望之電鍍液得以從該部分流出(電鍍液之適量也有因為 多孔體440之部位而不同的情形),藉此可防止液柱R之結 合的混亂,以防止空氣捲入,且氣泡不會堆積於多孔體44〇 與基板W之間,而可防止電鍍膜厚不平均。 這樣的調整,即使使例如第68圖及第69圖所示之電 解液通路部459底部分別位於電解液通路部459之不备 置亦可完成。亦即’使電鍵液通過多孔體44〇之通過^阻 因應部位而不同,可改變從多孔體44〇各部所供給之電铲 液供給量,而可選擇最適當的電鍍液之液體擴散=態。又 上述各實施形態係顯示應用於電解電鍵裝置之例 亦可代之而應用於將基板作為陽極而進 置 疋订之電解蝕刻裝 如以上詳細㈣由將電解液供給於電解液浸潰材 ^紙張f度^中國國家標準(CNS)A4規格(210 X 297公爱)1221862 Printed A7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A ------- B7 V. Description of the invention (77) Implementation of inserting the tube body and providing the electrolyte passage part in the porous body 44 °] 68th FIG. Is a schematic configuration diagram of an electrolytic plating apparatus according to another embodiment of the present invention. This electrolytic plating device is the same as the embodiment shown in FIG. 64. A plating solution introduction pipe 441 made of synthetic resin (made of a material that cannot be penetrated by the plating solution) is provided with a pipe body 445 connected to the plating solution. The electroplating solution through hole 439 of the plate 438 is inserted into the tube body 445 so that the front end thereof abuts the surface of the porous body 440, and at the same time, an electrolysis composed of non-penetrating elongated holes is provided at the portion of the porous body 44 abutting the tube body 445液槽 部 459。 Liquid passage portion 459. Furthermore, the plating solution supplied directly from the plating solution introduction pipe 441 to the electrolytic solution passage portion 459 of the porous body 440 through the pipe body 445 diffuses slowly from the bottom surface of the electrolytic solution passage portion 459 and penetrates into the porous body 44. Reaching the surface of the substrate W, a plurality of circular liquid columns R are formed between the substrate W and the surface of the porous body 440, and the plurality of liquid columns R are combined with each other on the substrate w, and the air is pushed out from the substrate W to fill the electricity. Mineral fluid. In addition, even if the plating process is repeatedly performed, the inner diameter of the front end of the tube 445 and the inner diameter of the bottom surface of the electrolyte passage portion 459 will not expand due to the passage of time, so the ideal liquid column R will not be damaged by the passage of time. Therefore, there is no case where air is entangled due to the disorder of the combination of the liquid column R, and bubbles do not accumulate between the porous body 440 and the substrate w, and uneven plating film thickness is not caused. At the same time, the passage resistance of the plating solution through the porous body 440 is reduced only by the length of the electrolyte passage portion 459. Therefore, even if a thick porous body 440 or a porous paper with a high density (low porosity) is used, Dimensions are applicable to China National Standard (CNS) A4 (210 X 297 mm) ^ ------ 77 312144 -III I ----- I — — — — — — — II ^ · — I --- -ί Please read the precautions on the back before filling this page) 1221862 V. Description of the invention (π ί Please read the precautions on the back before filling this page) 440, when the liquid is diffused, you can also make the appropriate amount of plating solution from porous The pre-position of the body 44 is discharged, and from this point of view, the air is not caused by the confusion of the combination of the liquid column {^, and the air bubbles do not accumulate between the porous body 440 and the substrate ff. , Will not cause uneven plating film thickness. Fig. 69 is a schematic configuration diagram of an electrolytic plating apparatus according to another embodiment of the present invention. This electrolytic plating apparatus is different from the embodiment shown in FIG. 68 in that the plating solution introduction pipe 441 is not provided with a pipe body 445 integrally formed with it, but the plating solution through-holes 439 and A separately prepared pipe body 447 is inserted into the electrolytic solution passage portion 459 of the porous body 440. In this case, it is also made of a material that does not cause the pipe body 447 to be affected by the plating solution. When printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as described above, it can also be the same as the embodiment shown in Figure 68. Even if the plating process is repeated, the inner diameter of the front end of the tube 447 will not expand due to the passage of time. Therefore, the ideal liquid column R will not be destroyed by the passage of time, so the air will not be entangled due to the chaos of the combination of the liquid column r, and the air bubbles will not accumulate between the porous body 440 and the substrate W. It will cause uneven plating thickness. At the same time, the tube body 447 is inserted into the porous body 440, so the resistance of the plating solution when passing through the porous body 440 will be reduced. Even if a thicker porous body 440 or a higher density (low porosity) porous body 440 is used, it can be made porous. An appropriate amount of liquid electrolyte is supplied at a predetermined position of the body 440, so that air is not caused by the chaos of the combination of the liquid column R, and bubbles do not accumulate between the porous body 440 and the substrate W, which does not cause The plating film thickness is uneven. [In accordance with the position of the porous body 440, the electroplating solution passes through the porous body 440. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 78 312144 1221862 A7 V. Description of the invention (79) Different over resistance [Embodiment] Fig. 70 is a schematic configuration diagram of an electrolytic plating apparatus according to another embodiment of the present invention. This electrolytic plating device is the same as the embodiment shown in FIG. 64. The electroplating solution introduction pipe 441 made of synthetic resin is provided with a pipe body 445 communicating with it. However, unlike FIG. 64, this device uses an anode. The plate 438 side protrudes from the center of the joint surface between the anode plate 438 and the porous body 44 and forms a concave shape on the porous body 440 side. With the above configuration, the plating solution supplied from the pipe body 445 near the center is supplied from below the porous body 440 with a small amount of resistance, so the supply amount is larger than that of the other parts. In other words, when the desired plating solution cannot flow out due to the different installation locations, the plating solution of the porous body 440 in the portion is reduced through the resistance, so that the desired plating solution can flow out of the portion (the appropriate amount of plating solution) There are also cases depending on the position of the porous body 440), thereby preventing the disorder of the combination of the liquid column R to prevent air from being entangled, and air bubbles will not be accumulated between the porous body 44 and the substrate W, which can prevent The plating film thickness is uneven. Such adjustments can be performed even if the bottoms of the electrolytic solution passage portions 459 shown in Figs. 68 and 69 are located in the electrolyte passage portion 459, respectively. That is, the passage of the electric key liquid through the porous body 44 is different depending on the location, and the supply amount of the electric shovel liquid supplied from each part of the porous body 44 may be changed, and the most appropriate liquid diffusion of the plating solution may be selected. . In addition, each of the above embodiments shows examples of application to an electrolytic key device. It can also be applied to a customized electrolytic etching device using a substrate as an anode. The details are as described above. The electrolyte is supplied to the electrolyte impregnated material. Paper f degree ^ Chinese National Standard (CNS) A4 specification (210 X 297 public love)
Iy 312144 --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 1221862 A7 _B7 五、發明說明(8G ) 内,並從電解液浸潰材之相反側供給電解液,即使填滿在 電解液浸潰材與被處理基板間之構造的電解處理裝置’氣 泡也不會捲入並堆積於電解液浸潰材與被處理基板之間’ 而可進行理想的液體擴散,因此具有可獲得所希望之電解 處理之優異功效。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 80 312144Iy 312144 -------- Order --------- (Please read the precautions on the back before filling out this page) 1221862 A7 _B7 5. In the description of the invention (8G), and immerse it from the electrolyte The electrolytic solution is supplied on the opposite side of the broken material, and even if the electrolytic processing device 'bubble is filled between the electrolytic solution impregnated material and the substrate to be processed, air bubbles will not be caught and accumulated between the electrolytic impregnated material and the substrate '' The ideal liquid diffusion can be performed, so it has the excellent effect of obtaining the desired electrolytic treatment. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 80 312144
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JP2000131879A JP4024991B2 (en) | 2000-04-21 | 2000-04-28 | Electrolytic treatment apparatus and electric field state control method thereof |
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TW89127901A TW480580B (en) | 1999-12-24 | 2000-12-26 | Method and apparatus for treating semiconductor substrate |
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TWI623997B (en) * | 2016-02-19 | 2018-05-11 | 斯庫林集團股份有限公司 | Plating apparatus and plating method |
US11211267B2 (en) | 2018-12-27 | 2021-12-28 | Toshiba Memory Corporation | Substrate processing apparatus and substrate processing method |
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JP2009099721A (en) * | 2007-10-16 | 2009-05-07 | Dainippon Screen Mfg Co Ltd | Method of cooling substrate and apparatus of cooling substrate |
WO2017190989A1 (en) | 2016-05-04 | 2017-11-09 | Basf Se | Self-cooling foam-containing composite materials |
CN113630974A (en) * | 2021-06-22 | 2021-11-09 | 广州美维电子有限公司 | Reworking method for hard gold infiltration electroplating of PCB (printed circuit board) |
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2000
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TWI623997B (en) * | 2016-02-19 | 2018-05-11 | 斯庫林集團股份有限公司 | Plating apparatus and plating method |
US11211267B2 (en) | 2018-12-27 | 2021-12-28 | Toshiba Memory Corporation | Substrate processing apparatus and substrate processing method |
TWI757604B (en) * | 2018-12-27 | 2022-03-11 | 日商東芝記憶體股份有限公司 | Substrate processing apparatus and substrate processing method |
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