KR100755661B1 - Electroplating apparatus and electroplating method using the same - Google Patents

Abstract

There is provided a plating apparatus for use in a plating treatment process. The plating treatment apparatus is provided with a plating solution supplied with a plating liquid, an anode installed in the plating liquid outlet, an anode installed in the plating tank, an anode disposed to face the anode at a predetermined interval, and installed between the anode and the cathode. And a floating electrode.

Plating treatment device, floating electrode, anode, cathode, plated material, plating layer

Description

Plating apparatus and plating method using the same {Electroplating apparatus and electroplating method using the same}

1 is a schematic cross-sectional view of a conventional plating treatment apparatus.

FIG. 2 is a cross-sectional view of a plated object to be plated using the plating apparatus of FIG. 1. FIG.

3 is a schematic cross-sectional view of a plating apparatus according to an embodiment of the present invention.

4 is a conceptual diagram illustrating a change in a magnetic field due to a magnetization material.

5A and 5B are conceptual views illustrating a change in an electric field caused by a floating electrode in a plating apparatus according to an embodiment of the present invention.

6A is a plan view of a floating electrode included in a plating apparatus according to an embodiment of the present invention.

FIG. 6B is a cross-sectional view taken along the line BB ′ of FIG. 6A.

7 is a schematic cross-sectional view of a modification of the plating apparatus according to the embodiment of the present invention.

8A is a plan view of a modification of the floating electrode included in the plating apparatus according to the embodiment of the present invention.

FIG. 8B is a cross-sectional view taken along the line BB ′ of FIG. 8A.

9A is a bottom perspective view of another modified example of the floating electrode included in the plating apparatus according to the embodiment of the present invention.

9B is a schematic cross-sectional view of a plating apparatus according to an exemplary embodiment of the present invention including the floating electrode of FIG. 9A.

10 is a schematic cross-sectional view of a plating apparatus according to another embodiment of the present invention.

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<Explanation of symbols for main parts of the drawings>

100, 101: plating apparatus 110: plating bath

120: entrance of the plating liquid 130: anode

140: polishing target 150: cathode

160: plating liquid outlet 170: floating electrode

180: hole 190: insulating film

195: insulating material 200: filter

300: plating layer

The present invention relates to a plating treatment apparatus and a plating treatment method using the same, and more particularly, to a plating treatment apparatus for forming a metal layer on the surface of the plated object and a plating treatment method using the same.

In the semiconductor manufacturing process, metal wiring technology using copper having lower electrical resistance and better electro-migration characteristics than conventional aluminum wiring materials has been introduced.

Copper has better electrical conductivity and signal characteristics, lower production costs and better electroplating than aluminum. However, unlike aluminum, it is difficult to dry etch and thus uses a new form of pattern formation method called damascene process. The damascene process is a method of first etching a wiring line trench and a via into an insulating layer, and then filling copper as a wiring material. The copper layer is formed through a pre-cleaning step, a diffusion barrier film forming step, a copper seed layer forming step and a copper plating step.

Here, the copper plating step is a step in which a plating solution is plated on copper to be plated such as a semiconductor substrate, and a plating apparatus is usually used.

1 shows a schematic cross-sectional view of a conventional plating treatment apparatus.

As shown in FIG. 1, the plating apparatus 10 includes a plating bath 11, a plating liquid inlet 12 which is a passage for supplying a plating liquid from the outside into the plating bath 11, and an anode installed in the plating bath 11. A plating solution for discharging the anode (13), the cathode (15) to face the anode 13 spaced apart at a predetermined interval and the plated material (14) is installed, and the overflowed plating liquid outside the plating bath (11) And an outlet 16.

When the plating liquid is supplied to the plating bath 11 through the plating liquid inlet 12 using, for example, a fountain device or the like, the plating liquid proceeds in the direction of the cathode 15, and thus the plating liquid is formed between the anode 13 and the cathode 15. Will be affected. The plated object 14 is mounted on the surface of the cathode 15 that faces the anode 13, and plating ions in the plating liquid advanced by the anode 13 are deposited on the plated object 14. At this time, the plating liquid which is not deposited on the plated object 14 is discharged to the outside through the plating liquid outlet 16 and re-supplied to the plating tank 11 through a predetermined cleaning process.

However, in the plating processing apparatus 10 according to the related art, as shown in FIG. 2, plating ions of the plating liquid do not form a plating layer 30 having a uniform thickness on the surface of the plated object 14, In particular, it is deposited thicker at the periphery than at the center of the plated object 14. In addition, in order to form a copper wiring by using the damascene process, chemical mechanical polishing (CMP) is often performed after plating. In the chemical mechanical polishing, the polishing rate is generally the edge of the semiconductor substrate. Faster than wealth Therefore, when chemical mechanical polishing is performed on the semiconductor substrate having a thicker peripheral portion, the thickness non-uniformity of the plating layer 30 is intensified.

An object of the present invention is to provide a plating treatment apparatus capable of forming a plating layer having a uniform thickness on a plated object.

Another object of the present invention is to provide a plating treatment method capable of forming a plating layer having a uniform thickness on a plated object.

Technical problems to be achieved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

Plating apparatus according to an embodiment of the present invention for solving the above technical problem is a plating bath supplied with a plating solution, an anode installed in the plating bath, a cathode facing away from the anode at a predetermined interval and the plated object is installed and And a plating apparatus including a floating electrode provided between the anode and the cathode.

Plating treatment method according to an embodiment of the present invention for solving the other technical problem includes a method of plating a plated object using the plating treatment apparatus according to the embodiments of the present invention.

Specific details of other embodiments are included in the detailed description and the accompanying drawings.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

3, a plating apparatus according to an embodiment of the present invention will be described. 3 is a cross-sectional view of a plating apparatus according to an embodiment of the present invention.

Plating apparatus 100 according to an embodiment of the present invention is a plating tank 110, the plating liquid inlet 120, the anode 130, the cathode 150, the plating material 140 is installed, the plating liquid outlet 160 The floating electrode 170 is disposed between the anode 130 and the cathode 150.

The plating bath 110 is filled with a plating liquid and includes an anode 130, a cathode 150, and a floating electrode 170 therein, where plating is performed.

The plating bath 110 has a plating solution inlet 120 and a plating solution outlet 160, so that the plating solution may be supplied through the plating solution inlet 120, and the plating solution may be discharged through the plating solution outlet 160.

The anode 130 serves to form an electric field in the plating bath 110 together with the cathode 150. The anode 130 is installed inside the plating bath 110, for example, may be installed in an area adjacent to the plating liquid inlet 120. For example, in the fountain type plating apparatus 100 in which the plating solution inlet 120 is located at the bottom of the plating bath 110, the anode 130 may be installed below the plating bath 110. .

The material used as the material of the anode 130 may be any material that does not contaminate the plating liquid during the plating operation. For example, it may be an insoluble material or a soluble material. In the case of an insoluble material, the reaction voltage of the anode 130 is increased to increase the decomposition reaction of the organic additive, and the plating solution may be contaminated by the by-products after the decomposition reaction, thereby controlling the reaction voltage or controlling the decomposition reaction not to affect the plating solution. Can be used with devices that can. As the soluble material, since the anode 130 component may be dissolved in the plating liquid to contaminate the plating liquid, the same material as the plating material contained in the plating liquid may not be used. In addition, when the anode 130 component is dissolved in the plating solution, the surface of the anode 130 may be non-uniform, and thus the distance to the plated object 140 may be different at each point. This difference in distance may cause a difference in charge density at each point in the region adjacent to the plated material 140. Accordingly, when the anode 130 of the soluble material is used, the cathode 130 may be spaced apart from the cathode 150 by a predetermined distance so as to minimize the difference in charge density due to the difference in distance.

The cathode 150 is installed to face the anode 130 spaced apart from the anode 130 in the plating bath 110. For example, when the anode 130 is formed below the plating bath 110, the cathode 150 may be installed above the plating bath 110.

The plated object 140 may be installed on one surface of the cathode 150 facing the anode 130. In this case, the plated object 140 may be installed to be electrically connected to the cathode 150. For example, when the cathode 150 is installed in the form of a jig connected to an external power source, the plated object 140 and the cathode 150 may be electrically connected to the periphery of the plated object 140 over the jig. have.

The floating electrode 170 is inserted between the anode 130 and the cathode 150 in the plating bath 110 to deform the plated object 140 by modifying an electric field formed by the anode 130 and the cathode 150. It serves to make the plating ions uniformly deposited.

To assist in understanding the role of the floating electrode 170 that changes the electric field in the plating bath 110, the electric field in the plating bath 110 by the floating electrode 170 will be described with reference to FIGS. 4, 5A, and 5B. Explain the change.

First, the change of the magnetic field due to the magnetic material, which exhibits a phenomenon similar to the electric field, will be described. As shown in Fig. 4A, when the N pole and the S pole are disposed to face each other, a magnetic field is formed from the S pole to the N pole direction. At this time, the magnetic force line starting from the center of S pole travels vertically in the N pole direction to reach the N pole, but at the periphery of the S pole, the magnetic force line which detours to the periphery of the N pole and reaches the periphery of the N pole is additionally formed. do. Therefore, at the periphery of the N pole, the magnetic flux density increases due to the magnetic force lines traveling in the vertical direction and the magnetic force lines bypassing the outer portion.

However, as shown in (b) of FIG. 4, when the distance between the N pole and the S pole is shortened, the curvature of the magnetic force line curve starting from the periphery of the S pole and bypassing to the outside becomes smooth. Therefore, the number of magnetic force lines that can be bypassed at the periphery is reduced so that the magnetic flux density at the periphery of the N pole is relatively smaller than in FIG.

As shown in FIG. 4C, when the magnetization material 20 is inserted between the N pole and the S pole, one surface of the magnetization material 20 facing the S pole acts as the N pole and starts from the S pole. And one surface of the magnetization material 20 facing the N pole acts as the S pole to emit a line of magnetic force. At this time, the path of the magnetic force line emitted from the magnetization material 20 is determined by the distance between the magnetization material 20 and the N pole irrespective of the path of the magnetic force line received from the S pole. Therefore, the magnetic field formed between the magnetization material 20 and the north pole is the same as the case where the distance between the north pole and the south pole becomes short as shown in FIG. Is relatively small compared with the case of FIG.

4 (d) shows the path of the magnetic force line when the magnetization material 20 approaches the N pole. As the magnetizing material 20 approaches the N pole, the magnetic force lines emitted from the periphery of the magnetizing material 20 become almost vertical, and the number of magnetic force lines bypassing the outer portion is further reduced. Therefore, the magnetic flux density in the region adjacent to the N pole periphery becomes the same or almost the same as the magnetic flux density at the center of the N pole.

The change in the electric field due to the insertion of the floating electrode 170 may be understood similarly to the change in the magnetic field due to the magnetization material 20. 5A and 5B show a change in electric field when the floating electrode 170 is inserted into the plating bath 110.

First, with reference to FIG. 1, the distribution of the electric field of the space where the anode 13 and the cathode 15 oppose in the conventional plating processing apparatus 10 is demonstrated. In FIG. 1, a voltage drop occurs while the plating ions contained in the plating liquid move from the anode 13 toward the cathode 15. At this time, an ion path starting from the periphery of the anode 13 and bypassing the outside to reach the plated material 14 installed in the cathode 15 is further formed to charge in an area adjacent to the periphery of the plated material 14. The density rises. Thus, the plating ions moving along the added ion path are further deposited on the periphery of the plated material 14 so that the periphery of the plated material 14 is thicker than the center portion.

Regarding the voltage drop, the plating pattern of the plated material as described above will be described. The voltage drop from the anode 13 in the direction of the cathode 15 can be divided into five stages. The first step is an activation overpotential step in which the material contained in the anode 13, for example copper, in the anode 13 is dissolved in the plating solution. The second step is a concentration overpotential step by dissociated ions, for example copper ions. The third step is a voltage drop (iR drop) caused by the movement of cations and anions in the solution to maintain the electrical neutral state of the anode 13 and cathode 15, where i represents the current density and R is the ion Represents resistance due to movement). In addition, the fourth step is a concentration overvoltage step at the cathode 15, and the fifth step is a reaction overvoltage step required for the plating ions to adhere to the surface of the plated material 14 of the cathode 15 at the cathode 15.

However, in the periphery of the plated object 14 electrically connected to the cathode 15, an additional ion path bypassing the anode 13 to the outside is formed so that the resistance R due to ion movement is partially Will decrease. As a result, the voltage drop (iR drop) caused by the movement of cations and anions is reduced in part, so that the reaction overvoltage at the periphery of the plated material 14 is relatively increased. Since the deposition amount of the plated ions in the plated material 14 is proportional to the reaction overvoltage, the periphery of the plated material 14 is plated thicker than the center portion.

FIG. 5A shows the change in electric field when the floating electrode 170 is inserted between the anode 130 and the cathode 150. When the floating electrode 170 is inserted between the anode 130 and the cathode 150, an ion path is formed in which ions from the anode 130 reach the floating electrode 170. Since it should be 0V, the potentials in the solution of the portion in contact with the floating electrode 170 are all the same. That is, regardless of the distribution of ion paths starting from the anode 130, the potentials in the solution of the floating electrode 170 and the portion in contact with it are the same, and the floating electrode 170 again becomes an anode with respect to the cathode 150. Can work. At this time, the distribution of the ion path starting from the floating electrode 170 is at a distance between the floating electrode 170 and the cathode 150 irrespective of the distribution of the ion path received from the anode 130 as in the case of the magnetic force line of FIG. 4B. Is determined by Therefore, the electric field formed between the floating electrode 170 and the plated object 140 electrically connected to the cathode 150 is the same as when the distance between the anode 130 and the cathode 150 is shortened. The charge density in the region adjacent to the periphery 140 becomes relatively smaller than in the case of FIG. 1. In other words, the additionally formed ion path is reduced as compared to the case of FIG. 1, thereby reducing the plating ions traveling along the additional ion path. Therefore, the nonuniformity of the thickness of the plating layer 300 generated by excessive deposition of the plating ions at the periphery of the plated material 140 is reduced.

5B shows the change in electric field when the floating electrode 170 is approached further toward the cathode 150. As the distance between the floating electrode 170 and the plated material 140 electrically connected to the cathode 150 approaches, additional ion paths that detour from the periphery of the floating electrode 170 to the outside are further reduced. The charge density in the region adjacent to the center portion and the region adjacent to the periphery of the forbidden portion 140 becomes the same or almost similar.

The floating electrode 170 may be installed to be substantially parallel to the plated object 140 in order to make the charge density of the region adjacent to the plated layer 140 uniform. For example, when the floating electrode 170 is a flat plate, the floating electrode 170 may be installed in parallel with the plated object 140. When the floating electrode 170 is a solid body having a curved surface, the plated object may be formed from each point of the floating electrode 170 ( 140 may be provided substantially parallel so that the dispersion value of the distance to 140 is minimized.

The floating electrode 170 may be installed at any position between the anode 130 and the plated material 140 electrically connected to the cathode 150, but the floating electrode (eg, the floating electrode) may be used to reduce additional ion paths. The distance from 170 to the plated object 140 may be smaller than or equal to the distance to the cathode 150.

6A and 6B show a plan view and a cross-sectional view of a floating electrode included in a plating apparatus according to an embodiment of the present invention, respectively. As shown in FIGS. 6A and 6B, the floating electrode 171 may include one or more holes 180 through which the plating liquid may move. The shape of the hole 180 may be, for example, circular or polygonal, but is not limited thereto. The number and size of the holes 180 may be appropriately adjusted in consideration of possible variables of the plating process, such as the flow rate of the plating liquid supplied from the plating liquid inlet 120, the moving speed of the plating ions, and the composition of the additive. Each hole 180 may be arranged to be symmetrical with respect to the center of the floating electrode 171, for example, but is not limited thereto. In addition, the arrangement of the holes 180 may be adjusted so that the floating electrode 171 may act as a diffuser at the same time.

The outer circumference of the floating electrode 171 may be in contact with the inner surface of the plating bath 110. For example, as shown in FIG. 7, the outer circumference of the floating electrode 171 is in contact with the inner surface of the plating bath 110. It may block additional ion pathways that diverge outward from 130. In this case, since the movement of the plating solution and the plating ions may be limited, the floating electrode 171 may include one or more holes 180.

FIG. 8A is a plan view of a modification of the floating electrode included in the plating apparatus according to the exemplary embodiment, and FIG. 8B is a cross-sectional view taken along the line BB ′ of FIG. 8A. As shown in FIGS. 8A and 8B, an insulating film 190 may be formed on the surface of the floating electrode 172 partially or entirely. When the insulating film 190 is formed on the surface of the floating electrode 172 opposite to the plated object 140, an electric field and an ion path are not formed at the forming portion of the insulating film 190, and thus the plated material corresponding to the insulating film 190 is formed. Ion paths and charge densities in areas adjacent to the 140 surface may decrease. Accordingly, the floating electrode corresponds to an area adjacent to the surface of the plated material 140 having a high charge density, for example, an area adjacent to the periphery of the plated material 140 whose charge density is increased by an additional ion path bypassing the outer portion. If the insulating film 190 is formed at the periphery of the 172, the reduced charge density by the insulating film 190 and the increased charge density by the additional ion path may be offset. For this purpose, the thickness, width, and width of the insulating film 190 may be offset. Can be adjusted appropriately. In addition, by experimentally inspecting the portion of the charge density of the adjacent portion to be plated 140 and selectively forming the insulating film 190 in the corresponding portion to make the charge density of the region adjacent to the surface of the plated 140 more uniform Can be adjusted.

The insulating layer 190 may be formed of any material capable of suppressing or reducing the electrical conductance of the floating electrode 172. For example, a polymer such as plastic may be formed on the surface of the floating electrode 172, and an artificially formed oxide film or a natural oxide film of the floating electrode 172 may be used.

The floating electrode referred to in the present invention may be a circular or polygonal plate, and may be symmetrical with respect to the center of the floating electrode in order to form a uniform electric field, but is not limited thereto. In addition, as shown in FIGS. 9A and 9B, the distance from the center of the plating object closer to the plated object 140 in the center than that of the floating electrode 173 in order to offset the increased charge density in the region adjacent to the periphery of the plating material. It can have a shape. That is, when the distance from the floating electrode 173 to the plated object 140 is increased, the voltage drop due to the movement of ions increases, so that the charge density in the region adjacent to the surface of the plated material 140 may decrease. Can be. Thus, by controlling this properly with the increased charge density by the additional ion path, the nonuniformity of the charge density can be reduced. For example, the floating electrode 173 may be a hollow cone and other modified shapes as shown in FIGS. 9A and 9B.

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The floating electrode mentioned in the present invention includes a conductive material having electricity conduction. The material of the floating electrode, in particular, the material of the surface may be the same material as the plating ions in the plating liquid or may be a material having a reduction potential of the floating electrode less than or equal to the plating ions in the plating liquid so that the floating electrode is not plated by the plating ions. For example, when using a copper plating solution, the floating electrode may be copper (Cu), silver (Ag), platinum (Pt), gold (Au), titanium (Ti), tantalum (Ta), aluminum (Al), or an alloy thereof. It may be and may be plated only on the surface. On the other hand, the anode 130 may affect the plating process depending on whether the material is soluble or insoluble. However, since an external voltage is not applied to the floating electrode, an additive decomposition reaction or the like rarely occurs even when the anode 130 is made of an insoluble material. I never do that.

Hereinafter, with reference to FIG. 3 will be described an operation of the plating treatment apparatus 100 according to an embodiment of the present invention and an embodiment of a plating treatment method for plating the plated object 140 using the same.

First, a plating solution, for example, a copper plating solution, is supplied to the plating bath 110 through a plating solution inlet 120 using, for example, a fountain device, to fill the plating bath 110 with the plating solution. The plated object 140, for example, the semiconductor substrate on which the seed layer is formed, is attached to the cathode 150 and brought into contact with the plating liquid in the plating bath 110. When an external power source (not shown) is connected to the anode 130 and the cathode 150 to apply a voltage, an electric field is formed from the anode 130 toward the cathode 150. When the plating ions, for example, copper ions, proceed toward the cathode 150 by the electric field formed and reach the floating electrode, rearrangement of the plating ions occurs to show the same potential on the surface of the floating electrode. At this time, an electric field is formed between the floating electrode and the cathode 150, and the plating ions proceed again toward the cathode 150 by the electric field thus formed. The plating ions reaching the portion of the cathode 150 are adsorbed to the plated object 140 that is electrically connected to the cathode 150 to form the plated layer 300 on the surface of the plated object 140.

On the other hand, the plating liquid supplied from the plating liquid inlet 120 by a fountain device or the like proceeds in the direction of the cathode 150, and then the plating liquid outlet 160, which is installed next to the cathode 150, for example, an overflow pipe or the like. 110) It is discharged to the outside. The plating liquid discharged to the outside may be supplied to the plating bath 110 through a cleaning process or the like.

Hereinafter, a plating apparatus according to another embodiment of the present invention will be described with reference to FIG. 10. For convenience of description, members having the same functions as the members shown in the drawings of the embodiment of FIG. 3 are denoted by the same reference numerals, and thus description thereof is omitted. The plating apparatus 101 of this embodiment has a structure and a function substantially the same as the plating apparatus 100 of the embodiment of FIG. 3 except for the filter 200 as shown in FIG. 10.

In FIG. 10, the filter 200 filters the impurities of the plating liquid that flows from the anode 130 toward the floating electrode 170. As shown in FIG. 10, the filter 200 may be installed between the anode and the floating electrode 170. For example, it can be installed in contact with the inner surface of the plating bath 110, it can be installed in close proximity to the surface of the anode (130). If necessary, various types of filters 200 may be used. For example, a selective ion permeable filter (selective ionic exchange filter 200), which is a filter 200 that permeates ions and does not permeate additives, may be used to inhibit additive decomposition reactions at the anode 130. In this case, the selective ion permeable filter 200 may be installed to surround the surface of the anode 130.

Furthermore, the anode 130 of the present embodiment may use both insoluble or soluble materials as in the plating apparatus 100 according to the embodiment of the present invention. In particular, when an insoluble material is used, the additive may not be permeated by the filter 200 or the permeation is suppressed to prevent the additive decomposition reaction from occurring on the anode 130. At this time, the surface potential of the filter 200 is rapidly increased, which may cause a change in the charge density in the region adjacent to the cathode 150. A floating electrode 170 is installed between the filter 200 and the cathode 150. It is possible to reduce the effect of the surface potential rise of the filter 200.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments but may be manufactured in various forms, and having ordinary skill in the art to which the present invention pertains. It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

As described above, according to the plating apparatus and the plating treatment method using the same according to an embodiment of the present invention, it is possible to uniformly form the thickness of the plated layer of the plated product to increase the reliability of the plated layer and to make the plated layer uniform. Additional steps can be omitted.

Claims (20)

A plating bath to which a plating liquid is supplied and a plating liquid inlet and a plating liquid outlet are formed; An anode installed in the plating bath; A cathode facing away from the anode and having a plated object installed thereon; And And a floating electrode provided between the anode and the cathode, the floating electrode having one or more holes formed therein, the floating electrode having a reduction potential equal to or less than the reduction potential of the plating ions in the plating liquid. delete According to claim 1, A plating treatment apparatus in which an outer circumference of the floating electrode is in contact with an inner surface of the plating bath. According to claim 1, The plating apparatus in which the insulating film is formed in the surface of the floating electrode which opposes the to-be-plated object. The method of claim 4, wherein And the insulating film is selectively formed at the periphery of the floating electrode. The method of claim 4, wherein The plating treatment device wherein the insulating film is a polymer or a metal oxide. According to claim 1, And a floating electrode having a shape in which a distance from the center of the floating electrode to the to-be-plated object is closer than the periphery of the floating electrode. According to claim 1, And a distance from the floating electrode to the plated object is less than or equal to the distance to the cathode. According to claim 1, And the anode is a soluble anode. According to claim 1, And a filter is further provided between the anode and the floating electrode. The method of claim 10, Plating treatment device wherein the filter has a selective ion permeability. The method of claim 11, wherein A plating treatment device in which the anode is insoluble. delete delete delete delete According to claim 1, A plating treatment apparatus in which the floating electrode is provided in parallel with the plated object. delete The method of claim 9, A plating treatment apparatus, wherein the surface of the floating electrode is made of Cu, Ag, Pt, Au, Ti, Ta, Al, or an alloy thereof. 20. A plating solution is supplied to the plating bath of the plating apparatus according to any one of claims 1, 3 to 12 and 17, and 19, Attaching a plated material having a seed layer formed on the cathode and contacting the plating liquid in the plating bath; And forming a plating layer on the surface of the plated object by forming an electric field between the anode and the cathode.

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