JP2017128492A - 結晶性酸化物膜 - Google Patents

結晶性酸化物膜 Download PDF

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Publication number
JP2017128492A
JP2017128492A JP2016149066A JP2016149066A JP2017128492A JP 2017128492 A JP2017128492 A JP 2017128492A JP 2016149066 A JP2016149066 A JP 2016149066A JP 2016149066 A JP2016149066 A JP 2016149066A JP 2017128492 A JP2017128492 A JP 2017128492A
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Japan
Prior art keywords
oxide film
film
crystalline oxide
substrate
indium
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JP2016149066A
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English (en)
Japanese (ja)
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JP2017128492A5 (enExample
Inventor
真也 織田
Shinya Oda
真也 織田
梨絵 徳田
Rie Tokuta
梨絵 徳田
俊実 人羅
Toshimi Hitora
俊実 人羅
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Flosfia Inc
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Flosfia Inc
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Application filed by Flosfia Inc filed Critical Flosfia Inc
Publication of JP2017128492A publication Critical patent/JP2017128492A/ja
Publication of JP2017128492A5 publication Critical patent/JP2017128492A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2016149066A 2016-01-15 2016-07-28 結晶性酸化物膜 Pending JP2017128492A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016005909 2016-01-15
JP2016005909 2016-01-15

Related Child Applications (1)

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JP2020126892A Division JP7168827B2 (ja) 2016-01-15 2020-07-27 結晶性酸化物膜

Publications (2)

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JP2017128492A true JP2017128492A (ja) 2017-07-27
JP2017128492A5 JP2017128492A5 (enExample) 2019-09-12

Family

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JP2020126892A Active JP7168827B2 (ja) 2016-01-15 2020-07-27 結晶性酸化物膜
JP2021172043A Active JP7688811B2 (ja) 2016-01-15 2021-10-20 結晶性酸化物膜

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JP2021172043A Active JP7688811B2 (ja) 2016-01-15 2021-10-20 結晶性酸化物膜

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JP (3) JP2017128492A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107976351A (zh) * 2017-11-27 2018-05-01 大连理工大学 一种海洋天然气水合物岩芯重塑装置及方法
WO2020194802A1 (ja) * 2019-03-28 2020-10-01 日本碍子株式会社 下地基板及びその製造方法
WO2021106810A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体システム
JPWO2021106811A1 (enExample) * 2019-11-29 2021-06-03
WO2021106809A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体装置を有する半導体システム
CN113097074A (zh) * 2021-04-06 2021-07-09 南京大学 一种二维材料的图形化电极集成与表面钝化方法
CN113891859A (zh) * 2019-03-29 2022-01-04 株式会社Flosfia 晶体、结晶性氧化物半导体、包含结晶性氧化物半导体的半导体膜、包含晶体和/或半导体膜的半导体装置以及包含半导体装置的系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235877A (ja) * 2007-02-19 2008-10-02 Showa Denko Kk 太陽電池及びその製造方法
JP2015070248A (ja) * 2013-10-01 2015-04-13 株式会社Flosfia 酸化物薄膜及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
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JP5035857B2 (ja) * 1999-07-16 2012-09-26 Ｈｏｙａ株式会社 低抵抗ｉｔｏ薄膜及びその製造方法
JP2004075427A (ja) * 2002-08-13 2004-03-11 Intertec:Kk コランダム型結晶相を含むｉｔｏ膜の製造方法及び該方法で成膜した透明電極用ｉｔｏ膜
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6052967B2 (ja) * 2012-08-31 2016-12-27 出光興産株式会社 スパッタリングターゲット
JP6233959B2 (ja) 2013-10-10 2017-11-22 株式会社Flosfia 酸化物結晶薄膜の製造方法
EP2942803B1 (en) * 2014-05-08 2019-08-21 Flosfia Inc. Crystalline multilayer structure and semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235877A (ja) * 2007-02-19 2008-10-02 Showa Denko Kk 太陽電池及びその製造方法
JP2015070248A (ja) * 2013-10-01 2015-04-13 株式会社Flosfia 酸化物薄膜及びその製造方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107976351A (zh) * 2017-11-27 2018-05-01 大连理工大学 一种海洋天然气水合物岩芯重塑装置及方法
JPWO2020194802A1 (ja) * 2019-03-28 2021-10-28 日本碍子株式会社 下地基板及びその製造方法
WO2020194802A1 (ja) * 2019-03-28 2020-10-01 日本碍子株式会社 下地基板及びその製造方法
US12351941B2 (en) 2019-03-28 2025-07-08 Ngk Insulators, Ltd. Ground substrate and method for producing same
JP7159449B2 (ja) 2019-03-28 2022-10-24 日本碍子株式会社 下地基板及びその製造方法
CN113891859A (zh) * 2019-03-29 2022-01-04 株式会社Flosfia 晶体、结晶性氧化物半导体、包含结晶性氧化物半导体的半导体膜、包含晶体和/或半导体膜的半导体装置以及包含半导体装置的系统
CN114762129A (zh) * 2019-11-29 2022-07-15 株式会社Flosfia 半导体装置及半导体系统
WO2021106811A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体システム
JPWO2021106809A1 (enExample) * 2019-11-29 2021-06-03
WO2021106809A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体装置を有する半導体システム
CN114747020A (zh) * 2019-11-29 2022-07-12 株式会社Flosfia 半导体装置及半导体系统
JPWO2021106810A1 (enExample) * 2019-11-29 2021-06-03
JPWO2021106811A1 (enExample) * 2019-11-29 2021-06-03
US12284822B2 (en) 2019-11-29 2025-04-22 Flosfia Inc. Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same
WO2021106810A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体システム
JP7733284B2 (ja) 2019-11-29 2025-09-03 株式会社Flosfia 半導体装置および半導体装置を有する半導体システム
CN113097074A (zh) * 2021-04-06 2021-07-09 南京大学 一种二维材料的图形化电极集成与表面钝化方法
CN113097074B (zh) * 2021-04-06 2024-02-09 南京大学 一种二维材料的图形化电极集成与表面钝化方法

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JP7168827B2 (ja) 2022-11-10
JP2020193146A (ja) 2020-12-03
JP7688811B2 (ja) 2025-06-05
JP2022009326A (ja) 2022-01-14

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