JP2017125837A5 - - Google Patents
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- Publication number
- JP2017125837A5 JP2017125837A5 JP2016215336A JP2016215336A JP2017125837A5 JP 2017125837 A5 JP2017125837 A5 JP 2017125837A5 JP 2016215336 A JP2016215336 A JP 2016215336A JP 2016215336 A JP2016215336 A JP 2016215336A JP 2017125837 A5 JP2017125837 A5 JP 2017125837A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor gas
- directing
- workpiece
- supplying
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 6
- 239000002243 precursor Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022020992A JP7342165B2 (ja) | 2015-11-06 | 2022-02-15 | 改良された材料付着法および集束イオン・ビーム・システム |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562252308P | 2015-11-06 | 2015-11-06 | |
| US62/252,308 | 2015-11-06 | ||
| US15/087,968 | 2016-03-31 | ||
| US15/087,968 US9978586B2 (en) | 2015-11-06 | 2016-03-31 | Method of material deposition |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022020992A Division JP7342165B2 (ja) | 2015-11-06 | 2022-02-15 | 改良された材料付着法および集束イオン・ビーム・システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017125837A JP2017125837A (ja) | 2017-07-20 |
| JP2017125837A5 true JP2017125837A5 (OSRAM) | 2019-10-24 |
| JP7046482B2 JP7046482B2 (ja) | 2022-04-04 |
Family
ID=58667953
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016215336A Active JP7046482B2 (ja) | 2015-11-06 | 2016-11-02 | 改良された材料付着法 |
| JP2022020992A Active JP7342165B2 (ja) | 2015-11-06 | 2022-02-15 | 改良された材料付着法および集束イオン・ビーム・システム |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022020992A Active JP7342165B2 (ja) | 2015-11-06 | 2022-02-15 | 改良された材料付着法および集束イオン・ビーム・システム |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9978586B2 (OSRAM) |
| JP (2) | JP7046482B2 (OSRAM) |
| KR (1) | KR102629567B1 (OSRAM) |
| CN (1) | CN107058944B (OSRAM) |
| TW (1) | TWI716483B (OSRAM) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10804565B2 (en) * | 2017-07-31 | 2020-10-13 | Robert Bosch Gmbh | Batteries with polymer electrolyte composites based on tetrahedral arylborate nodes |
| JP6887343B2 (ja) * | 2017-08-24 | 2021-06-16 | 株式会社日立製作所 | 加工方法、半導体装置および加工装置 |
| ES2738911A1 (es) * | 2018-07-25 | 2020-01-27 | Consejo Superior Investigacion | Procedimiento para depositar elementos sobre un sustrato de interes y dispositivo |
| DE102018222522A1 (de) * | 2018-12-20 | 2020-06-25 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb einer Gaszuführungseinrichtung sowie Gaszuführungseinrichtung zur Durchführung des Verfahrens und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung |
| JP7221405B2 (ja) * | 2019-09-17 | 2023-02-13 | 株式会社日立ハイテク | イオンビーム装置 |
| US11233017B2 (en) | 2019-10-03 | 2022-01-25 | Texas Instruments Incorporated | Ex-situ manufacture of metal micro-wires and FIB placement in IC circuits |
| EP3922752B1 (en) | 2020-06-12 | 2025-09-03 | Imec VZW | A method for preparing a sample for transmission electron microscopy |
| DE102021132834B4 (de) | 2021-12-13 | 2024-08-08 | Carl Zeiss Microscopy Gmbh | Gasreservoir, Gaszuführungseinrichtung mit einem Gasreservoir und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung |
| DE102021132832A1 (de) | 2021-12-13 | 2023-06-15 | Carl Zeiss Microscopy Gmbh | Gaszuführungseinrichtung, Teilchenstrahlgerät mit einer Gaszuführungseinrichtung sowie Verfahren zum Betrieb der Gaszuführungseinrichtung und des Teilchenstrahlgeräts |
| DE102021132833A1 (de) | 2021-12-13 | 2023-06-15 | Carl Zeiss Microscopy Gmbh | Gaszuführungseinrichtung, System mit einer Gaszuführungseinrichtung sowie Teilchenstrahlgerät mit einer Gaszuführungseinrichtung oder dem System |
| CN115369386B (zh) * | 2022-08-15 | 2023-07-25 | 北京科技大学 | 一种在微结构衬底上沉积金刚石的方法 |
| TW202527021A (zh) | 2022-09-26 | 2025-07-01 | 德商卡爾蔡司多重掃描電子顯微鏡有限公司 | 帶電粒子束裝置的擾動補償 |
| CN116380582B (zh) * | 2023-03-31 | 2024-09-20 | 胜科纳米(苏州)股份有限公司 | 一种超薄悬空膜透射电镜样品的制备方法 |
| WO2025149160A1 (en) | 2024-01-11 | 2025-07-17 | Carl Zeiss Smt Gmbh | Disturbance compensation for charged particle beam devices |
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| US5435850A (en) | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
| US5851413A (en) | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
| JP3872245B2 (ja) * | 2000-01-14 | 2007-01-24 | エスアイアイ・ナノテクノロジー株式会社 | 試料の断面構造観察方法 |
| JP2001264220A (ja) * | 2000-03-15 | 2001-09-26 | Jeol Ltd | 集束イオンビーム装置用標準試料 |
| JP2004191358A (ja) * | 2002-11-27 | 2004-07-08 | Seiko Instruments Inc | 複合荷電粒子ビームによる試料作製方法および装置 |
| KR20050033699A (ko) * | 2003-10-07 | 2005-04-13 | 삼성전자주식회사 | 투과전자현미경 분석용 시편의 제작 방법 |
| DE10358036B4 (de) * | 2003-12-11 | 2011-05-26 | Qimonda Ag | Verfahren zum Charakterisieren einer Tiefenstruktur in einem Substrat |
| US7320945B2 (en) * | 2004-06-30 | 2008-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gradient low k material |
| JP4947965B2 (ja) * | 2005-12-06 | 2012-06-06 | ラピスセミコンダクタ株式会社 | 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造 |
| US7511282B2 (en) * | 2006-05-25 | 2009-03-31 | Fei Company | Sample preparation |
| EP2106555B1 (en) * | 2006-10-20 | 2015-01-07 | FEI Company | Method for s/tem sample analysis |
| WO2008051880A2 (en) * | 2006-10-20 | 2008-05-02 | Fei Company | Method and apparatus for sample extraction and handling |
| JP5873227B2 (ja) * | 2007-12-06 | 2016-03-01 | エフ・イ−・アイ・カンパニー | デコレーションを用いたスライス・アンド・ビュー |
| US8226835B2 (en) * | 2009-03-06 | 2012-07-24 | Tel Epion Inc. | Ultra-thin film formation using gas cluster ion beam processing |
| JP2010230518A (ja) | 2009-03-27 | 2010-10-14 | Toppan Printing Co Ltd | 薄片試料作製方法 |
| EP2233907A1 (en) * | 2009-03-27 | 2010-09-29 | FEI Company | Forming an image while milling a work piece |
| JP5702552B2 (ja) * | 2009-05-28 | 2015-04-15 | エフ イー アイ カンパニFei Company | デュアルビームシステムの制御方法 |
| JP5973466B2 (ja) * | 2011-01-28 | 2016-08-23 | エフ・イ−・アイ・カンパニー | Tem試料の調製 |
| US8853078B2 (en) * | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
| US8912490B2 (en) * | 2011-06-03 | 2014-12-16 | Fei Company | Method for preparing samples for imaging |
| EP2749863A3 (en) * | 2012-12-31 | 2016-05-04 | Fei Company | Method for preparing samples for imaging |
| US8859963B2 (en) * | 2011-06-03 | 2014-10-14 | Fei Company | Methods for preparing thin samples for TEM imaging |
| US8822921B2 (en) * | 2011-06-03 | 2014-09-02 | Fei Company | Method for preparing samples for imaging |
| JP5560246B2 (ja) | 2011-08-29 | 2014-07-23 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置に用いられる標準試料,及び荷電粒子線装置に用いられる標準試料の製造方法 |
| AU2012318242A1 (en) * | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
| JP6085150B2 (ja) * | 2012-03-16 | 2017-02-22 | 株式会社日立ハイテクサイエンス | 試料作製装置及び試料作製方法 |
| JP6188792B2 (ja) * | 2012-05-21 | 2017-08-30 | エフ・イ−・アイ・カンパニー | Tem観察用の薄片の調製 |
| US8912488B2 (en) * | 2012-11-15 | 2014-12-16 | Fei Company | Automated sample orientation |
| CN105008891B (zh) | 2013-01-11 | 2018-02-06 | Fei公司 | 用于变更蚀刻速率的离子注入 |
| JP6112929B2 (ja) * | 2013-03-25 | 2017-04-12 | 株式会社日立ハイテクサイエンス | 集束イオンビーム装置、それを用いた試料の加工方法、及び集束イオンビームを用いた試料の加工コンピュータプログラム |
| EP2787523B1 (en) | 2013-04-03 | 2016-02-10 | Fei Company | Low energy ion milling or deposition |
| CN103257066B (zh) * | 2013-05-07 | 2015-05-20 | 上海华力微电子有限公司 | Tem样品的制备方法 |
| US9064811B2 (en) | 2013-05-28 | 2015-06-23 | Fei Company | Precursor for planar deprocessing of semiconductor devices using a focused ion beam |
| EP2916342A1 (en) * | 2014-03-05 | 2015-09-09 | Fei Company | Fabrication of a lamella for correlative atomic-resolution tomographic analyses |
| KR101568247B1 (ko) * | 2014-06-02 | 2015-11-12 | 한국에너지기술연구원 | 질소 도핑된 탄소 표면을 갖는 금속-탄소 하이브리드 복합체 및 그 제조방법 |
| CN104122130B (zh) * | 2014-07-31 | 2019-08-20 | 上海华力微电子有限公司 | 一种透射电镜样品的制备方法 |
| US9349573B2 (en) * | 2014-08-01 | 2016-05-24 | Omniprobe, Inc. | Total release method for sample extraction in an energetic-beam instrument |
| CN104777024B (zh) * | 2015-04-23 | 2017-09-19 | 上海华力微电子有限公司 | 一种透射电镜样品的制备方法及定位方法 |
-
2016
- 2016-03-31 US US15/087,968 patent/US9978586B2/en active Active
- 2016-11-01 KR KR1020160144491A patent/KR102629567B1/ko active Active
- 2016-11-02 JP JP2016215336A patent/JP7046482B2/ja active Active
- 2016-11-03 TW TW105135782A patent/TWI716483B/zh active
- 2016-11-04 CN CN201610963956.0A patent/CN107058944B/zh active Active
-
2018
- 2018-05-21 US US15/985,346 patent/US11069523B2/en active Active
-
2020
- 2020-12-09 US US17/116,504 patent/US11798804B2/en active Active
-
2022
- 2022-02-15 JP JP2022020992A patent/JP7342165B2/ja active Active
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