JP2017119670A - 有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法 - Google Patents
有機膜形成用化合物、有機膜形成用組成物、有機膜形成方法、及びパターン形成方法 Download PDFInfo
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- JP2017119670A JP2017119670A JP2016218071A JP2016218071A JP2017119670A JP 2017119670 A JP2017119670 A JP 2017119670A JP 2016218071 A JP2016218071 A JP 2016218071A JP 2016218071 A JP2016218071 A JP 2016218071A JP 2017119670 A JP2017119670 A JP 2017119670A
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Images
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- G03F7/322—Aqueous alkaline compositions
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F218/02—Esters of monocarboxylic acids
- C08F218/12—Esters of monocarboxylic acids with unsaturated alcohols containing three or more carbon atoms
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D149/00—Coating compositions based on homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bonds; Coating compositions based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
本発明の有機膜形成用化合物は、50℃以上300℃以下の範囲で測定される複素粘性率の最小値が10Pa・s以下のものである。
本発明の有機膜形成用化合物は、特に限定されないが、例えば下記反応式(2−1)〜(2−8)で示されるようなエポキシ化合物とカルボン酸化合物との付加反応により得ることができる。
また、本発明では、有機膜形成用の組成物であって、上述の本発明の有機膜形成用化合物及び有機溶剤を含有する有機膜形成用組成物を提供する。なお、本発明の有機膜形成用組成物において、上述の本発明の有機膜形成用化合物は、1種を単独で又は2種以上を組み合わせて用いることができる。
本発明では、半導体装置の製造工程で使用される有機平坦膜として機能する有機膜の形成方法であって、被加工基板上に上述の本発明の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物を塗布した基板を100℃以上600℃以下の温度で10〜600秒間の範囲で熱処理することにより硬化膜を形成する有機膜形成方法を提供する。
[ケイ素含有レジスト下層膜を用いた3層レジストプロセス]
本発明では、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト下層膜材料を用いてレジスト下層膜を形成し、該レジスト下層膜の上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記レジスト下層膜にエッチングでパターンを転写し、該パターンが転写されたレジスト下層膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト下層膜材料を用いてレジスト下層膜を形成し、該レジスト下層膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記レジスト下層膜にエッチングでパターンを転写し、該パターンが転写されたレジスト下層膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の本発明の有機膜形成用組成物を用いた3層レジストプロセスによるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、及びケイ素酸化窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
また、本発明では、上述の本発明の有機膜形成用組成物を用いた4層レジストプロセスによるパターン形成方法として、被加工体上に上述の本発明の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、及びケイ素酸化窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写するパターン形成方法を提供する。
エポキシ化合物(E−A1)78.1g、カルボン酸化合物(C−A1)74.1g、及び2−メトキシ−1−プロパノール1,000gを窒素雰囲気下、液温100℃で均一溶液とした後、ベンジルトリエチルアンモニウムクロリド11.4gを加え液温120℃で12時間撹拌した。室温まで冷却後、メチルイソブチルケトン3,000gを加え、有機層を純水600gで5回洗浄した。有機層を減圧乾固し、有機膜形成用化合物(A−1)を得た。GPCにより重量平均分子量(Mw)、分散度(Mw/Mn)を求めたところ、Mw=713、Mw/Mn=1.04であった。
表1に示されるエポキシ化合物、カルボン酸化合物を使用した以外は、合成例1と同じ反応条件で、表2〜5に示されるような有機膜形成用化合物(A−2)〜(A−27)を得た。これらの化合物の重量平均分子量(Mw)及び分散度(Mw/Mn)を求め、表2〜5に示した。
表1に示されるエポキシ化合物、カルボン酸化合物を使用した以外は、合成例1と同じ反応条件で、表5に示されるような化合物(B−1)、(B−2)を得た。これらの化合物の重量平均分子量(Mw)及び分散度(Mw/Mn)を求め、表5に示した。
下記のナフトール化合物(C−1A)166g、4−ヒドロキシメチルフェノール(C−1B)250g、及び2−メトキシ−1−プロパノール2,000gを窒素雰囲気下、液温80℃で均一溶液とした後、20%パラトルエンスルホン酸2−メトキシ−1−プロパノール溶液50gをゆっくり加え、液温110℃で12時間撹拌した。室温まで冷却後、メチルイソブチルケトン2,500gを加え、有機層を純水1,000gで5回洗浄後、有機層を減圧乾固した。残渣にテトラヒドロフラン(THF)1,000mLを加え、ヘキサン4,000mLで晶出させた。晶出した結晶をろ過で分別し減圧乾燥して化合物(C−1)を得た。GPCにより重量平均分子量(Mw)、分散度(Mw/Mn)を求めたところ、Mw=1,062、Mw/Mn=1.57であった。
m−クレゾール54.1g、37%ホルマリン溶液32.5g、及び2−メトキシ−1−プロパノール250gを窒素雰囲気下、液温80℃で均一溶液とした後、20%パラトルエンスルホン酸2−メトキシ−1−プロパノール溶液18gをゆっくり加え、液温110℃で12時間撹拌した。室温まで冷却後、メチルイソブチルケトン500gを加え、有機層を純水200gで5回洗浄後、有機層を減圧乾固した。残渣にTHF300mLを加え、ヘキサン2,000mLでポリマーを再沈させた。沈降したポリマーをろ過で分別し減圧乾燥して化合物(R−1)を得た。GPCにより重量平均分子量(Mw)、分散度(Mw/Mn)を求めたところ、Mw=6,900、Mw/Mn=5.53であった。
1−ナフトール72.0g、37%ホルマリン溶液24.3g、及び2−メトキシ−1−プロパノール250gを窒素雰囲気下、液温80℃で均一溶液とした後、20%パラトルエンスルホン酸2−メトキシ−1−プロパノール溶液18gをゆっくり加え、液温110℃で12時間撹拌した。室温まで冷却後、メチルイソブチルケトン500gを加え、有機層を純水200gで5回洗浄後、有機層を減圧乾固した。残渣にTHF300mLを加え、ヘキサン2,000mLでポリマーを再沈させた。沈降したポリマーをろ過で分別し減圧乾燥して化合物(R−2)を得た。GPCにより重量平均分子量(Mw)、分散度(Mw/Mn)を求めたところ、Mw=1,800、Mw/Mn=3.33であった。
1,5−ジヒドロキシナフタレン80.1g、37%ホルマリン溶液26.4g、及び2−メトキシ−1−プロパノール250gを窒素雰囲気下、液温80℃で均一溶液とした後、20%パラトルエンスルホン酸2−メトキシ−1−プロパノール溶液18gをゆっくり加え、液温110℃で12時間撹拌した。室温まで冷却後、メチルイソブチルケトン500gを加え、有機層を純水200gで5回洗浄後、有機層を減圧乾固した。残渣にTHF300mLを加え、ヘキサン2,000mLでポリマーを再沈させた。沈降したポリマーをろ過で分別し減圧乾燥して化合物(R−3)を得た。GPCにより重量平均分子量(Mw)、分散度(Mw/Mn)を求めたところ、Mw=3,000、Mw/Mn=2.65であった。
2,7−ジプロパルギルオキシナフタレン78.8g、37%ホルマリン溶液21.6g、及び1,2−ジクロロエタン250gを窒素雰囲気下、液温70℃で均一溶液とした後、メタンスルホン酸5gをゆっくり加え、液温80℃で12時間撹拌した。室温まで冷却後、メチルイソブチルケトン500gを加え、有機層を純水200gで5回洗浄後、有機層を減圧乾固した。残渣にTHF300mLを加え、ヘキサン2,000mLでポリマーを再沈させた。沈降したポリマーをろ過で分別し減圧乾燥して化合物(R−4)を得た。GPCにより重量平均分子量(Mw)、分散度(Mw/Mn)を求めたところ、Mw=2,700、Mw/Mn=1.54であった。
上記の有機膜形成用化合物(A−1)〜(A−27)、化合物(B−1)、(B−2)、(C−1)、(R−1)〜(R−4)の複素粘性率を、アントンパール社製MCRレオメーターMCR302を用いて測定した。測定する際は、外径20mmの測定治具を用い、ひずみ1%、周波数1Hz、5℃/分の昇温速度で、50℃から300℃の複素粘性率を測定した。図1は有機膜形成用化合物(A−1)の複素粘性率の測定結果を示すグラフである。図1の測定結果によると、100℃における複素粘性率は250Pa・sとなり、更に昇温を続け、190℃で複素粘性率の最小値0.8Pa・sを示し、続いて複素粘性率の上昇が始まり架橋反応が始まったことが示唆されている。このようにして測定した有機膜形成用化合物(A−1)〜(A−27)、化合物(B−1)、(B−2)、(C−1)、(R−1)〜(R−4)の100℃における複素粘性率、架橋開始温度(複素粘性率が最小となる温度)、及び架橋開始時の複素粘性率を表6に示す。
上記の有機膜形成用化合物(A−1)〜(A−27)、化合物(B−1)、(B−2)、(C−1)、(R−1)〜(R−4)、添加剤として架橋剤(CR1)、(CR2)、酸発生剤(AG1)、高沸点溶剤として(S−1)1,6−ジアセトキシヘキサン(沸点260℃)又は(S−2)トリプロピレングリコールモノメチルエーテル(沸点242℃)をプロピレングリコールモノメチルエーテルアセテート(PGMEA)、FC−4430(住友スリーエム(株)製)0.1質量%を含む溶媒中に表7に示す割合で溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによって有機膜形成用組成物(UDL−1〜38)をそれぞれ調製した。なお、本発明の有機膜形成用化合物(A−1)〜(A−27)を含有するUDL−1〜34が本発明の有機膜形成用組成物であり、架橋開始時の複素粘性率が10Pa・sを超える化合物(R−1)〜(R−4)を含有するUDL−35〜38は比較用の有機膜形成用組成物である。
上記の有機膜形成用組成物(UDL−1〜38)をそれぞれ、密集ホールパターン(ホール直径0.16μm、ホール深さ0.50μm、隣り合う二つのホールの中心間の距離0.32μm)を有するSiO2ウエハー基板上に塗布し、ホットプレートを用いて150℃で60秒間加熱し、有機膜を形成した。使用した基板は図4(G)(俯瞰図)及び(H)(断面図)に示すような密集ホールパターンを有する下地基板7(SiO2ウエハー基板)である。得られた各ウエハー基板の断面形状を、走査型電子顕微鏡(SEM)を用いて観察し、ホール内部にボイド(空隙)なく、有機膜で充填されているかどうかを確認した。結果を表8に示す。埋め込み特性に劣る有機膜形成用組成物を用いた場合は、本評価において、ホール内部にボイドが発生する。埋め込み特性が良好な有機膜形成用組成物を用いた場合は、本評価において、図4(I)に示されるように密集ホールパターンを有する下地基板7のホール内部にボイドなく有機膜8が充填される。
上記の有機膜形成用組成物(UDL−1〜38)をそれぞれ、巨大孤立トレンチパターン(図5(J)、トレンチ幅10μm、トレンチ深さ0.10μm)を有する下地基板9(SiO2ウエハー基板)上に塗布し、表9に記載の条件で焼成した後、トレンチ部分と非トレンチ部分の有機膜10の段差(図5(K)中のdelta10)を、パークシステムズ社製NX10原子間力顕微鏡(AFM)を用いて観察した。結果を表9に示す。本評価において、段差が小さいほど、平坦化特性が良好であるといえる。なお、本評価では、深さ0.10μmのトレンチパターンを、有機膜形成用組成物を用いて通常膜厚約0.2μmの有機膜を形成することで平坦化しており、平坦化特性の優劣を評価するために、特殊な厳しい評価条件となっている。
上記の有機膜形成用組成物(UDL−1〜34)をそれぞれ、トレンチパターン(トレンチ幅10μm、トレンチ深さ0.10μm)を有するSiO2ウエハー基板上に塗布し、250℃で60秒間焼成して、有機膜を形成した。その上に下記のケイ素含有レジスト下層膜材料(SOG1)を塗布し、200℃で60秒間ベークして膜厚35nmのケイ素含有レジスト下層膜を形成した。その上にレジスト上層膜材料として下記のArF用単層レジストを塗布し、105℃で60秒間ベークして膜厚100nmのフォトレジスト膜を形成した。フォトレジスト膜上に下記の液浸保護膜材料(TC−1)を塗布し、90℃で60秒間ベークして膜厚50nmの保護膜を形成した。
チャンバー圧力 10.0Pa
RFパワー 1,500W
CF4ガス流量 75mL/min
O2ガス流量 15mL/min
時間 15sec
チャンバー圧力 2.0Pa
RFパワー 500W
Arガス流量 75mL/min
O2ガス流量 45mL/min
時間 120sec
チャンバー圧力 2.0Pa
RFパワー 2,200W
C5F12ガス流量 20mL/min
C2F6ガス流量 10mL/min
Arガス流量 300mL/min
O2ガス流量 60mL/min
時間 90sec
3…有機膜、 3’…有機膜形成用組成物、 3a…有機膜パターン、
4…ケイ素含有レジスト下層膜、 4a…ケイ素含有レジスト下層膜パターン、
5…レジスト上層膜、 5a…レジスト上層膜パターン、 6…露光部分、
7…密集ホールパターンを有する下地基板、 8…有機膜、
9…巨大孤立トレンチパターンを有する下地基板、 10…有機膜、
delta10…トレンチ部分と非トレンチ部分の有機膜の膜厚の差。
Claims (19)
- 有機膜形成用の化合物であって、50℃以上300℃以下の範囲で測定される複素粘性率の最小値が10Pa・s以下のものであることを特徴とする有機膜形成用化合物。
- 前記有機膜形成用化合物の100℃における複素粘性率が、1,000Pa・s以下であることを特徴とする請求項1に記載の有機膜形成用化合物。
- 前記有機膜形成用化合物が、下記一般式(1A)で示されるものであることを特徴とする請求項1又は請求項2に記載の有機膜形成用化合物。
- 前記有機膜形成用化合物の分子量が、2,500以下であることを特徴とする請求項1から請求項3のいずれか一項に記載の有機膜形成用化合物。
- 有機膜形成用の組成物であって、請求項1から請求項4のいずれか一項に記載の有機膜形成用化合物及び有機溶剤を含有するものであることを特徴とする有機膜形成用組成物。
- 前記有機膜形成用組成物が、更に下記一般式(2A)で示される化合物及び下記一般式(3A)で示される化合物のいずれか又は両方を含有するものであることを特徴とする請求項5に記載の有機膜形成用組成物。
- 前記有機溶剤は、沸点が180度未満の有機溶剤1種以上と、沸点が180度以上の有機溶剤1種以上との混合物であることを特徴とする請求項5又は請求項6に記載の有機膜形成用組成物。
- 半導体装置の製造工程で使用される有機平坦膜として機能する有機膜の形成方法であって、被加工基板上に請求項5から請求項7のいずれか一項に記載の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物を塗布した基板を100℃以上600℃以下の温度で10〜600秒間の範囲で熱処理することにより硬化膜を形成することを特徴とする有機膜形成方法。
- 半導体装置の製造工程で使用される有機平坦膜として機能する有機膜の形成方法であって、被加工基板上に請求項5から請求項7のいずれか一項に記載の有機膜形成用組成物を回転塗布し、該有機膜形成用組成物を塗布した基板を酸素濃度0.1%以上21%以下の雰囲気で熱処理することにより硬化膜を形成することを特徴とする有機膜形成方法。
- 前記被加工基板として、高さ30nm以上の構造体又は段差を有する被加工基板を用いることを特徴とする請求項8又は請求項9に記載の有機膜形成方法。
- 被加工体上に請求項5から請求項7のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト下層膜材料を用いてレジスト下層膜を形成し、該レジスト下層膜の上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記レジスト下層膜にエッチングでパターンを転写し、該パターンが転写されたレジスト下層膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項5から請求項7のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素原子を含有するレジスト下層膜材料を用いてレジスト下層膜を形成し、該レジスト下層膜の上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記レジスト下層膜にエッチングでパターンを転写し、該パターンが転写されたレジスト下層膜をマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項5から請求項7のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、及びケイ素酸化窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 被加工体上に請求項5から請求項7のいずれか一項に記載の有機膜形成用組成物を用いて有機膜を形成し、該有機膜の上にケイ素酸化膜、ケイ素窒化膜、及びケイ素酸化窒化膜から選ばれる無機ハードマスクを形成し、該無機ハードマスクの上に有機反射防止膜を形成し、該有機反射防止膜上にフォトレジスト組成物からなるレジスト上層膜材料を用いてレジスト上層膜を形成し、該レジスト上層膜に回路パターンを形成し、該回路パターンが形成されたレジスト上層膜をマスクにして前記有機反射防止膜と前記無機ハードマスクにエッチングでパターンを転写し、該パターンが転写された無機ハードマスクをマスクにして前記有機膜にエッチングでパターンを転写し、更に、該パターンが転写された有機膜をマスクにして前記被加工体にエッチングでパターンを転写することを特徴とするパターン形成方法。
- 前記無機ハードマスクの形成を、CVD法又はALD法によって行うことを特徴とする請求項13又は請求項14に記載のパターン形成方法。
- 前記回路パターンの形成において、波長が10nm以上300nm以下の光を用いたリソグラフィー、電子線による直接描画、ナノインプリンティング、又はこれらの組み合わせによって回路パターンを形成することを特徴とする請求項11から請求項15のいずれか一項に記載のパターン形成方法。
- 前記回路パターンの形成において、アルカリ現像又は有機溶剤によって回路パターンを現像することを特徴とする請求項11から請求項16のいずれか一項に記載のパターン形成方法。
- 前記被加工体が、半導体装置基板、又は該半導体装置基板上に金属膜、金属炭化膜、金属酸化膜、金属窒化膜、金属酸化炭化膜、及び金属酸化窒化膜のいずれかが成膜されたものであることを特徴とする請求項11から請求項17のいずれか一項に記載のパターン形成方法。
- 前記被加工体を構成する金属が、ケイ素、チタン、タングステン、ハフニウム、ジルコニウム、クロム、ゲルマニウム、銅、銀、金、アルミニウム、インジウム、ガリウム、ヒ素、パラジウム、鉄、タンタル、イリジウム、モリブデン、又はこれらの合金であることを特徴とする請求項18に記載のパターン形成方法。
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EP4187320A1 (en) | 2021-11-25 | 2023-05-31 | Shin-Etsu Chemical Co., Ltd. | Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process |
KR20230077675A (ko) | 2021-11-25 | 2023-06-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 유기막 형성 재료, 반도체 장치 제조용 기판, 유기막의 형성 방법, 패턴 형성 방법 |
EP4290309A1 (en) | 2022-06-10 | 2023-12-13 | Shin-Etsu Chemical Co., Ltd. | Resist underlayer film material, patterning process, and method for forming resist underlayer film |
KR20230170583A (ko) | 2022-06-10 | 2023-12-19 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 하층막 재료, 패턴 형성 방법, 및 레지스트 하층막 형성 방법 |
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TW201732440A (zh) | 2017-09-16 |
JP6714492B2 (ja) | 2020-06-24 |
KR102528118B1 (ko) | 2023-05-02 |
US20170183531A1 (en) | 2017-06-29 |
TWI611269B (zh) | 2018-01-11 |
KR20170076555A (ko) | 2017-07-04 |
US10429739B2 (en) | 2019-10-01 |
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