JP2017084436A5 - - Google Patents
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- JP2017084436A5 JP2017084436A5 JP2016213142A JP2016213142A JP2017084436A5 JP 2017084436 A5 JP2017084436 A5 JP 2017084436A5 JP 2016213142 A JP2016213142 A JP 2016213142A JP 2016213142 A JP2016213142 A JP 2016213142A JP 2017084436 A5 JP2017084436 A5 JP 2017084436A5
- Authority
- JP
- Japan
- Prior art keywords
- read threshold
- threshold voltage
- bit error
- error rate
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/928,284 US9818488B2 (en) | 2015-10-30 | 2015-10-30 | Read threshold voltage adaptation using bit error rates based on decoded data |
| US14/928,284 | 2015-10-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017084436A JP2017084436A (ja) | 2017-05-18 |
| JP2017084436A5 true JP2017084436A5 (enExample) | 2019-07-04 |
| JP6713909B2 JP6713909B2 (ja) | 2020-06-24 |
Family
ID=58635551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016213142A Expired - Fee Related JP6713909B2 (ja) | 2015-10-30 | 2016-10-31 | 装置、有形のマシン読取可能な記録可能な記憶媒体、および方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9818488B2 (enExample) |
| JP (1) | JP6713909B2 (enExample) |
| KR (1) | KR20170054276A (enExample) |
| CN (1) | CN107039080B (enExample) |
Families Citing this family (50)
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| US10236067B2 (en) * | 2017-08-02 | 2019-03-19 | International Business Machines Corporation | State-dependent read voltage threshold adaptation for nonvolatile memory |
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| US10276233B1 (en) | 2017-10-31 | 2019-04-30 | Seagate Technology Llc | Adaptive read threshold voltage tracking with charge leakage mitigation using threshold voltage offsets |
| US10388368B2 (en) | 2017-10-31 | 2019-08-20 | Seagate Technology Llc | Adaptive read threshold voltage tracking with charge leakage mitigation using charge leakage settling time |
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| CN109935261B (zh) * | 2019-02-19 | 2021-08-31 | 西南交通大学 | 一种用于存储器差错控制的多级译码方法和装置 |
| CN110209517B (zh) * | 2019-04-25 | 2024-01-23 | 深圳市金泰克半导体有限公司 | 一种固态硬盘工作方法、系统、电子设备及存储介质 |
| US11704178B2 (en) * | 2019-05-14 | 2023-07-18 | Micron Technology, Inc. | Estimating a bit error rate of data stored by a memory subsystem using machine learning |
| US10892029B1 (en) * | 2019-07-12 | 2021-01-12 | Micron Technology, Inc. | Self-adaptive read voltage adjustment using directional error statistics for memories with time-varying error rates |
| US11107550B2 (en) * | 2019-07-12 | 2021-08-31 | Micron Technology, Inc. | Self-adaptive read voltage adjustment using boundary error statistics for memories with time-varying error rates |
| CN112242171B (zh) * | 2019-07-17 | 2024-11-08 | 英韧科技股份有限公司 | 参考电压确定方法及装置 |
| US11023172B2 (en) * | 2019-07-26 | 2021-06-01 | Micron Technology, Inc. | Selecting read voltage using write transaction data |
| US10783978B1 (en) * | 2019-08-27 | 2020-09-22 | Micron Technology, Inc. | Read voltage-assisted manufacturing tests of memory sub-system |
| US11307799B2 (en) * | 2019-08-27 | 2022-04-19 | Micron Technology, Inc. | Managing threshold voltage drift based on operating characteristics of a memory sub-system |
| US10950315B1 (en) | 2019-12-16 | 2021-03-16 | Micron Technology, Inc. | Preread and read threshold voltage optimization |
| CN112988448B (zh) * | 2019-12-16 | 2025-05-09 | 中国科学院微电子研究所 | 误码率平衡方法及装置,读取方法及装置 |
| US11494254B2 (en) * | 2019-12-20 | 2022-11-08 | Cnex Labs, Inc. | Storage system with predictive adjustment mechanism and method of operation thereof |
| US11289172B2 (en) * | 2020-08-13 | 2022-03-29 | Western Digital Technologies, Inc. | Soft bit reference level calibration |
| US11430531B2 (en) * | 2020-09-08 | 2022-08-30 | Western Digital Technologies, Inc. | Read integration time calibration for non-volatile storage |
| US11379305B2 (en) * | 2020-11-16 | 2022-07-05 | Western Digital Technologies, Inc. | Fast verification of non-volatile data integrity |
| US11373705B2 (en) * | 2020-11-23 | 2022-06-28 | Micron Technology, Inc. | Dynamically boosting read voltage for a memory device |
| CN112599176B (zh) * | 2020-12-15 | 2022-08-05 | 联芸科技(杭州)股份有限公司 | 存储器的最佳检测电压获取方法、读取控制方法及装置 |
| CN112599177B (zh) * | 2020-12-23 | 2024-07-26 | 深圳大普微电子股份有限公司 | 一种阈值电压的管理方法、读取闪存数据的方法 |
| WO2022213320A1 (zh) * | 2021-04-08 | 2022-10-13 | 中国科学院微电子研究所 | 用于闪存的数据恢复方法 |
| TWI777519B (zh) * | 2021-04-26 | 2022-09-11 | 群聯電子股份有限公司 | 記憶體管理方法、記憶體儲存裝置及記憶體控制電路單元 |
| US11494114B1 (en) * | 2021-04-26 | 2022-11-08 | Micron Technology, Inc. | Read threshold adjustment techniques for non-binary memory cells |
| US11443828B1 (en) | 2021-04-26 | 2022-09-13 | Micron Technology, Inc. | Read threshold adjustment techniques for memory |
| US11488684B1 (en) | 2021-06-21 | 2022-11-01 | Western Digital Technologies, Inc. | Storage system and method for decision-based memory read threshold calibration |
| CN113409861B (zh) * | 2021-06-28 | 2024-02-02 | 芯天下技术股份有限公司 | 阈值电压的获取系统、传递方法、装置、设备及存储介质 |
| CN113595562B (zh) * | 2021-07-23 | 2023-05-09 | 深圳宏芯宇电子股份有限公司 | 软数据处理方法、装置、存储介质及解码器 |
| KR20230049881A (ko) | 2021-10-07 | 2023-04-14 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
| US20230393752A1 (en) * | 2022-06-02 | 2023-12-07 | Micron Technology, Inc. | Voltage window adjustment |
| CN115620760B (zh) * | 2022-09-16 | 2023-10-20 | 上海江波龙数字技术有限公司 | 一种最优读出阈值电压的搜索方法、终端及存储介质 |
| CN119597204A (zh) * | 2023-09-08 | 2025-03-11 | 慧荣科技股份有限公司 | 数据存取控制的方法、存储器装置的存储器控制器、存储器装置以及电子装置 |
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| US6466614B1 (en) | 2001-03-22 | 2002-10-15 | Motorola, Inc. | Method and apparatus for classifying a baseband signal |
| KR100891005B1 (ko) * | 2007-06-28 | 2009-03-31 | 삼성전자주식회사 | 고온 스트레스로 인한 읽기 마진의 감소를 보상하기 위한플래시 메모리 장치 및 그것의 읽기 전압 조정 방법 |
| CN101645103A (zh) * | 2009-09-14 | 2010-02-10 | 清华大学 | 同时减轻集成电路老化和降低泄漏功耗的电源电压调整法 |
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| US9697905B2 (en) | 2013-05-31 | 2017-07-04 | Sandisk Technologies Llc | Updating read voltages using syndrome weight comparisons |
| US9728263B2 (en) * | 2013-05-31 | 2017-08-08 | Sandisk Technologies Llc | Method and device for iteratively updating read voltages |
| US20170148510A1 (en) | 2013-05-31 | 2017-05-25 | Sandisk Technologies Llc | Updating read voltages |
| TWI619353B (zh) * | 2013-07-03 | 2018-03-21 | Lsi公司 | 在低密度奇偶性校驗(ldpc)解碼器中之對數相似比(llr)抑制 |
| US9146850B2 (en) | 2013-08-01 | 2015-09-29 | SMART Storage Systems, Inc. | Data storage system with dynamic read threshold mechanism and method of operation thereof |
| US20150085571A1 (en) * | 2013-09-24 | 2015-03-26 | Sandisk Technologies Inc. | Updating read voltages |
| US9620202B2 (en) * | 2013-11-01 | 2017-04-11 | Seagate Technology Llc | Reduction or elimination of a latency penalty associated with adjusting read thresholds for non-volatile memory |
| US9317361B2 (en) | 2013-11-27 | 2016-04-19 | Seagate Technology Llc | Bit-line defect detection using unsatisfied parity code checks |
| US9176815B2 (en) | 2013-11-28 | 2015-11-03 | Seagate Technology Llc | Flash channel with selective decoder likelihood dampening |
| US9431130B2 (en) | 2014-03-04 | 2016-08-30 | Kabushiki Kaisha Toshiba | Memory controller, storage device, and memory control method |
| TWI521529B (zh) | 2014-04-15 | 2016-02-11 | 群聯電子股份有限公司 | 解碼方法、記憶體儲存裝置及記憶體控制電路單元 |
| US9263138B1 (en) * | 2014-09-30 | 2016-02-16 | Seagate Technology | Systems and methods for dynamically programming a flash memory device |
-
2015
- 2015-10-30 US US14/928,284 patent/US9818488B2/en active Active
-
2016
- 2016-10-31 JP JP2016213142A patent/JP6713909B2/ja not_active Expired - Fee Related
- 2016-10-31 KR KR1020160143663A patent/KR20170054276A/ko not_active Ceased
- 2016-10-31 CN CN201610967649.XA patent/CN107039080B/zh active Active
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