KR20170054276A - 디코딩된 데이터에 기초한 비트 에러 레이트들을 사용하는 판독 임계 전압 적응 - Google Patents

디코딩된 데이터에 기초한 비트 에러 레이트들을 사용하는 판독 임계 전압 적응 Download PDF

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KR20170054276A
KR20170054276A KR1020160143663A KR20160143663A KR20170054276A KR 20170054276 A KR20170054276 A KR 20170054276A KR 1020160143663 A KR1020160143663 A KR 1020160143663A KR 20160143663 A KR20160143663 A KR 20160143663A KR 20170054276 A KR20170054276 A KR 20170054276A
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read threshold
threshold voltage
read
bit error
error rate
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Korean (ko)
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선다라라잔 산카라나라야난
압델하킴 살렘 알후사인
젠강 첸
에리히 에프. 하라치
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시게이트 테크놀로지 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0706—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
    • G06F11/0727—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a storage system, e.g. in a DASD or network based storage system
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0751—Error or fault detection not based on redundancy
    • G06F11/0754—Error or fault detection not based on redundancy by exceeding limits
    • G06F11/076—Error or fault detection not based on redundancy by exceeding limits by exceeding a count or rate limit, e.g. word- or bit count limit
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/079—Root cause analysis, i.e. error or fault diagnosis
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0793—Remedial or corrective actions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Read Only Memory (AREA)
  • Retry When Errors Occur (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
KR1020160143663A 2015-10-30 2016-10-31 디코딩된 데이터에 기초한 비트 에러 레이트들을 사용하는 판독 임계 전압 적응 Ceased KR20170054276A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/928,284 US9818488B2 (en) 2015-10-30 2015-10-30 Read threshold voltage adaptation using bit error rates based on decoded data
US14/928,284 2015-10-30

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KR20170054276A true KR20170054276A (ko) 2017-05-17

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US (1) US9818488B2 (enExample)
JP (1) JP6713909B2 (enExample)
KR (1) KR20170054276A (enExample)
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KR20220021403A (ko) * 2020-08-13 2022-02-22 웨스턴 디지털 테크놀로지스, 인코포레이티드 소프트 비트 기준 레벨 교정
KR20220066815A (ko) * 2020-11-16 2022-05-24 웨스턴 디지털 테크놀로지스, 인코포레이티드 비휘발성 데이터 무결성의 고속 검증

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KR20220021403A (ko) * 2020-08-13 2022-02-22 웨스턴 디지털 테크놀로지스, 인코포레이티드 소프트 비트 기준 레벨 교정
KR20220066815A (ko) * 2020-11-16 2022-05-24 웨스턴 디지털 테크놀로지스, 인코포레이티드 비휘발성 데이터 무결성의 고속 검증

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JP6713909B2 (ja) 2020-06-24
CN107039080B (zh) 2021-11-12
US9818488B2 (en) 2017-11-14
JP2017084436A (ja) 2017-05-18
US20170125111A1 (en) 2017-05-04

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