JP2017069565A - 高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法 - Google Patents
高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法 Download PDFInfo
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- JP2017069565A JP2017069565A JP2016193737A JP2016193737A JP2017069565A JP 2017069565 A JP2017069565 A JP 2017069565A JP 2016193737 A JP2016193737 A JP 2016193737A JP 2016193737 A JP2016193737 A JP 2016193737A JP 2017069565 A JP2017069565 A JP 2017069565A
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 223
- 150000004767 nitrides Chemical class 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 17
- 238000001020 plasma etching Methods 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 11
- 239000000460 chlorine Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 239000011343 solid material Substances 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims description 5
- 229930195733 hydrocarbon Natural products 0.000 claims description 5
- 150000002430 hydrocarbons Chemical class 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 44
- 239000000758 substrate Substances 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 24
- 239000010408 film Substances 0.000 description 24
- 239000002994 raw material Substances 0.000 description 14
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910003363 ZnMgO Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910021074 Pd—Si Inorganic materials 0.000 description 1
- -1 SiN Chemical class 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
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- H01L29/66007—Multistep manufacturing processes
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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Abstract
【解決手段】HEMT1Aは、n型のZnO系化合物半導体からなり、積層方向と交差する方向に並ぶ一対の高濃度n型半導体領域16a,16bと、一対のn型半導体領域16a,16bの間に設けられ積層方向に順に積層された、GaNチャネル層14、及びGaNチャネル層14よりも大きいバンドギャップを有するIII族窒化物半導体からなる電子供給層15と、n型半導体領域16a上に設けられたソース電極31と、n型半導体領域16b上に設けられたドレイン電極32と、電子供給層15上に設けられたゲート電極33とを備える。
【選択図】図1
Description
本発明の実施形態に係る高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法の具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。以下の説明では、図面の説明において同一の要素には同一の符号を付し、重複する説明を省略する。
図1は、本発明の一実施形態に係る高電子移動度トランジスタ(HEMT)1Aの構成を示す断面図である。HEMT1Aは、基板11、窒化物半導体層12、ソース電極31、ドレイン電極32、及びゲート電極33を備える。窒化物半導体層12は、バッファ層13、GaNチャネル層14、及び電子供給層(バリア層)15がこの順に積層されて成り、更に一対のn型半導体領域16a,16bを有する。このHEMT1Aは絶縁性の表面保護膜41によって覆われており、ソース電極31、ドレイン電極32、及びゲート電極33は、表面保護膜41に形成された開口を介して、対応する各金属配線にそれぞれ接続される。
まず、半絶縁性のSiC基板上に、MOCVD法においてTMA及びNH3を原料とし、成長温度1080℃、圧力13.3kPaにて、バッファ層13としてのAlN層を成長させた。成長後のAlN層の厚さは、30nmであった。次に、TMG及びNH3を原料とし、成長温度1080℃、圧力13.3kPaにて、バッファ層13の上にGaNチャネル層14を成長させた。
上記実施例と同様にして、半絶縁性のSiC基板上に、バッファ層13、GaNチャネル層14、及び電子供給層15をMOCVD法により成長させた。そして、電子供給層15の上にソース電極31、ドレイン電極32、及びゲート電極33を形成した。その後、ソース電極31、ドレイン電極32、及びゲート電極33に接続される金属配線を形成したのち、SiNからなる表面保護膜41を成膜することにより、本比較例のHEMTを完成させた。なお、本比較例のHEMTにおいても、ゲート長(Lg)を0.2μmとし、ソース−ドレイン電極間隔を3.0μmとした。
第1実施例と同様にして、半絶縁性のSiC基板上に、バッファ層13、GaNチャネル層14、及び電子供給層15をMOCVD法により成長させた。続いて、Cl系ガスを用いたRIEによって、GaNチャネル層14及び電子供給層15の一対の領域A1,A2をエッチングすることにより深さ80nmのリセスを形成した。そして、このリセス部分にのみ高濃度n型GaN領域を形成する為、先ず基板上の全面にSiO2膜をCVDにより形成した。その後、高濃度n型GaN領域を形成する部分のSiO2膜をフッ素系ガス(例えばSF6、CF4など)を用いたRIEにより除去した。
上記のようにして作製された第1実施例、第1比較例、および第2比較例の各HEMTに対し、ドレイン電極32とソース電極31との間に10Vの電圧を印加し、ゲート電極33とソース電極31との間への印加電圧を調整することにより、ドレイン電流を200mA/mmに設定した。そして、DC特性及びSパラメータの測定(高周波測定)を行った。
Rcs:ソース電極31と半導体とのコンタクト(接触)抵抗
Rs1:ソース電極31直下からチャネル領域との境界までのn型半導体領域16aのアクセス抵抗
Rs2:n型半導体領域16aとの境界からゲート電極33直下までのチャネル領域のアクセス抵抗
Rd1:ゲート電極33直下からn型半導体領域16bとの境界までのチャネル領域のアクセス抵抗
Rd2:チャネル領域との境界からドレイン電極32直下までのn型半導体領域16bのアクセス抵抗
Rcd:ドレイン電極32と半導体とのコンタクト(接触)抵抗
Ron:ソース電極31からドレイン電極32までのオン抵抗(上記のRcs〜Rcdの総和)
なお、ソース−ゲート間のアクセス抵抗は、上記のRcs、Rs1及びRs2の和とみなすことができる。
まず、半絶縁性のSiC基板上に、MOCVD法を用いてバッファ層13としてのAlN層を成長させた。次に、TMG及びNH3を原料とし、成長温度1080°C、圧力13.3kPaにて、GaNチャネル層14を成長させた。続いて、TMA、TMI及びNH3を原料として、成長温度800°C、圧力15.0kPaにて、GaNチャネル層14の上にInAlN電子供給層15を成長させた。成長後の電子供給層15の厚さは8nmであり、In組成はGaNに格子整合可能な17%である。
図7は、本発明の別の実施形態に係るHEMT1Bの構成を示す断面図である。HEMT1Bは、第1実施形態と同様に、基板11、窒化物半導体層12、ソース電極31、ドレイン電極32、及びゲート電極33を備える。窒化物半導体層12は、バッファ層13、GaNチャネル層14、及び電子供給層(バリア層)15がこの順に積層されて成る。そして、HEMT1Bは、一対のn型半導体領域16a,16bを更に備える。なお、これらの構成は、上記第1実施形態と同様である。
まず、半絶縁性のSiC基板上に、MOCVD法を用いてバッファ層13としてのAlN層を成長させた。次に、TMG及びNH3を原料とし、成長温度1080°C、圧力13.3kPaにて、GaNチャネル層14を成長させた。続いて、TMA、TMI及びNH3を原料として、成長温度800°C、圧力15.0kPaにて、GaNチャネル層14の上にInAlN電子供給層15を成長させた。成長後の電子供給層15の厚さは8nmであり、In組成はGaNに格子整合可能な17%である。
まず、半絶縁性のSiC基板上に、MOCVD法を用いてバッファ層13としてのAlN層を成長させた。次に、TMG及びNH3を原料とし、成長温度1080°C、圧力13.3kPaにて、GaNチャネル層14を成長させた。続いて、TMA、TMI及びNH3を原料として、成長温度800°C、圧力15.0kPaにて、GaNチャネル層14の上にInAlN電子供給層15を成長させた。成長後の電子供給層15の厚さは8nmであり、In組成はGaNに格子整合可能な17%である。
Claims (7)
- n型のZnO系化合物半導体からなり、積層方向と交差する方向に並ぶ一対の高濃度n型半導体領域と、
前記一対の高濃度n型半導体領域の間に設けられ前記積層方向に順に積層された、GaNチャネル層、及び前記GaNチャネル層よりも大きいバンドギャップを有するIII族窒化物半導体からなる電子供給層と、
一方の前記高濃度n型半導体領域上に設けられたソース電極と、
他方の前記高濃度n型半導体領域上に設けられたドレイン電極と、
前記電子供給層上に設けられたゲート電極と、
を備える、高電子移動度トランジスタ。 - 前記一対の高濃度n型半導体領域の電子濃度が1×1020cm3以上である、請求項1に記載の高電子移動度トランジスタ。
- In、Sn、Zn、及びこれらの酸化物のうち少なくとも一つを含み、前記電子供給層と前記一対の高濃度n型半導体領域との間に設けられた犠牲層を更に備える、請求項1または2に記載の高電子移動度トランジスタ。
- GaNチャネル層、及び前記GaNチャネル層よりも大きいバンドギャップを有するIII族窒化物半導体からなる電子供給層を積層方向に順に成長させる工程と、
塩素系ガスを反応ガスとする反応性イオンエッチングにより、少なくとも前記電子供給層において前記積層方向と交差する方向に並ぶ一対の領域を除去する工程と、
前記一対の領域の除去により生じた前記GaNチャネル層の一対の露出面上、及び前記一対の露出面の間の前記電子供給層上に、n型のZnO系化合物半導体からなりAl及びGaの少なくとも一方をn型ドーパントとして含む高濃度n型半導体領域を成長させる工程と、
炭化水素系ガスをエッチングガスとするドライエッチングにより、前記電子供給層上の前記高濃度n型半導体領域を除去する工程と、
一方の前記露出面上に形成された前記高濃度n型半導体領域上にソース電極を、他方の前記露出面上に形成された前記高濃度n型半導体領域上にドレイン電極をそれぞれ形成し、前記電子供給層上にゲート電極を形成する工程と、
を含む、高電子移動度トランジスタの製造方法。 - 前記一対の領域を除去する工程では、前記反応性イオンエッチングの深さを前記電子供給層の表面から少なくとも80nmとする、請求項4に記載の高電子移動度トランジスタの製造方法。
- 前記高濃度n型半導体領域を成長させる工程では、亜鉛(Zn)の固体原料を用い、O2プラズマ雰囲気中で成長温度700℃以下にて前記高濃度n型半導体領域を気相成長させる、請求項4または5に記載の高電子移動度トランジスタの製造方法。
- 前記高濃度n型半導体領域を成長させた後、前記電子供給層上の前記高濃度n型半導体領域を除去する前に、前記高濃度n型半導体領域の熱処理を行う、請求項4〜6のいずれか一項に記載の高電子移動度トランジスタの製造方法。
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