JP2017065959A5 - - Google Patents
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- Publication number
- JP2017065959A5 JP2017065959A5 JP2015192724A JP2015192724A JP2017065959A5 JP 2017065959 A5 JP2017065959 A5 JP 2017065959A5 JP 2015192724 A JP2015192724 A JP 2015192724A JP 2015192724 A JP2015192724 A JP 2015192724A JP 2017065959 A5 JP2017065959 A5 JP 2017065959A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- type
- sic single
- aluminum
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 9
- 229910052782 aluminium Inorganic materials 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 239000002994 raw material Substances 0.000 claims 4
- 238000000859 sublimation Methods 0.000 claims 4
- 230000008022 sublimation Effects 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000005092 sublimation method Methods 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015192724A JP6755524B2 (ja) | 2015-09-30 | 2015-09-30 | ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法 |
| PCT/JP2016/078834 WO2017057581A1 (ja) | 2015-09-30 | 2016-09-29 | ｐ型４Ｈ－ＳｉＣ単結晶及びｐ型４Ｈ－ＳｉＣ単結晶の製造方法 |
| CN201680056202.5A CN108026663B (zh) | 2015-09-30 | 2016-09-29 | p型4H－SiC单晶和p型4H－SiC单晶的制造方法 |
| US15/763,596 US20180274125A1 (en) | 2015-09-30 | 2016-09-29 | P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal |
| US16/914,506 US11542631B2 (en) | 2015-09-30 | 2020-06-29 | Method for producing p-type 4H-SiC single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015192724A JP6755524B2 (ja) | 2015-09-30 | 2015-09-30 | ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017065959A JP2017065959A (ja) | 2017-04-06 |
| JP2017065959A5 true JP2017065959A5 (enExample) | 2018-08-30 |
| JP6755524B2 JP6755524B2 (ja) | 2020-09-16 |
Family
ID=58423571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015192724A Active JP6755524B2 (ja) | 2015-09-30 | 2015-09-30 | ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20180274125A1 (enExample) |
| JP (1) | JP6755524B2 (enExample) |
| CN (1) | CN108026663B (enExample) |
| WO (1) | WO2017057581A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019166576A1 (en) | 2018-02-28 | 2019-09-06 | Abb Schweiz Ag | Method for p-type doping of silicon carbide by al/be co-implantation |
| JP7068914B2 (ja) * | 2018-04-26 | 2022-05-17 | 昭和電工株式会社 | 断熱性遮蔽部材及びそれを備えた単結晶製造装置 |
| JP7170521B2 (ja) | 2018-12-05 | 2022-11-14 | 昭和電工株式会社 | ＳｉＣ単結晶の評価用サンプル取得方法 |
| CN110129880A (zh) * | 2019-04-26 | 2019-08-16 | 河北同光晶体有限公司 | 一种低碳包裹物密度SiC单晶的生长装置及生长方法 |
| WO2021020574A1 (ja) | 2019-08-01 | 2021-02-04 | ローム株式会社 | 半導体基板及び半導体装置並びにそれらの製造方法 |
| JP7331590B2 (ja) * | 2019-09-27 | 2023-08-23 | 株式会社デンソー | 炭化珪素半導体装置 |
| KR102340110B1 (ko) * | 2019-10-29 | 2021-12-17 | 주식회사 쎄닉 | 탄화규소 잉곳, 웨이퍼 및 이의 제조방법 |
| JP7282214B2 (ja) * | 2020-01-24 | 2023-05-26 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 |
| DE102020106291B4 (de) * | 2020-03-09 | 2024-02-08 | Ebner Industrieofenbau Gmbh | Heizvorrichtung und Verfahren zur Kristallzüchtung mit beweglicher Impfkristallhalterung |
| CN112522788A (zh) * | 2020-10-30 | 2021-03-19 | 山东天岳先进科技股份有限公司 | 一种富氮碳化硅粉料及其制备方法与应用 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5433167A (en) * | 1992-02-04 | 1995-07-18 | Sharp Kabushiki Kaisha | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal |
| US6063185A (en) | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| US7316747B2 (en) * | 2002-06-24 | 2008-01-08 | Cree, Inc. | Seeded single crystal silicon carbide growth and resulting crystals |
| US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
| US7608524B2 (en) | 2005-04-19 | 2009-10-27 | Ii-Vi Incorporated | Method of and system for forming SiC crystals having spatially uniform doping impurities |
| JP4469396B2 (ja) * | 2008-01-15 | 2010-05-26 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ |
| JP4697235B2 (ja) * | 2008-01-29 | 2011-06-08 | トヨタ自動車株式会社 | ｐ型ＳｉＣ半導体単結晶の製造方法およびそれにより製造されたｐ型ＳｉＣ半導体単結晶 |
| JP5839315B2 (ja) * | 2010-07-30 | 2016-01-06 | 株式会社デンソー | 炭化珪素単結晶およびその製造方法 |
| JP2014187113A (ja) | 2013-03-22 | 2014-10-02 | Toshiba Corp | 気相成長装置および気相成長方法 |
| JP6152981B2 (ja) | 2013-08-02 | 2017-06-28 | 株式会社デンソー | 炭化珪素単結晶 |
-
2015
- 2015-09-30 JP JP2015192724A patent/JP6755524B2/ja active Active
-
2016
- 2016-09-29 US US15/763,596 patent/US20180274125A1/en not_active Abandoned
- 2016-09-29 WO PCT/JP2016/078834 patent/WO2017057581A1/ja not_active Ceased
- 2016-09-29 CN CN201680056202.5A patent/CN108026663B/zh active Active
-
2020
- 2020-06-29 US US16/914,506 patent/US11542631B2/en active Active
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