JP2017054900A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2017054900A JP2017054900A JP2015177222A JP2015177222A JP2017054900A JP 2017054900 A JP2017054900 A JP 2017054900A JP 2015177222 A JP2015177222 A JP 2015177222A JP 2015177222 A JP2015177222 A JP 2015177222A JP 2017054900 A JP2017054900 A JP 2017054900A
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- Prior art keywords
- gate electrode
- film
- silicide layer
- insulating film
- forming
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Abstract
【解決手段】ゲートラストプロセスにおいて層間絶縁膜IL1を研磨することで層間絶縁膜IL1から制御ゲート電極CGおよびメモリゲート電極MGのそれぞれの上面を露出する際、それらのゲート電極の上面を覆うシリサイド層S2を形成する。その後、シリサイド層S2上に堆積した金属膜と制御ゲート電極CGおよびメモリゲート電極MGとを反応させて、各ゲート電極上にシリサイド層S2よりも厚いシリサイド層を形成する。
【選択図】図22
Description
<半導体装置の製造方法について>
本実施の形態の半導体装置の製造方法を、図1〜図24を参照して説明する。
次に、不揮発性メモリの動作例について、図28を参照して説明する。
以下に、本実施の形態の製造方法および半導体装置の効果について、図49〜図51を用いて説明する。図49および図50は、比較例の半導体装置の製造工程を示す断面図である。図51は、本実施の形態の半導体装置の製造工程を示す断面図である。
前記実施の形態では、図22に示す金属膜MF2を形成する際のスパッタリング工程においてターゲットTG(図13参照)に供給するエネルギーを小さくすることで、シリサイド層S2の破壊およびメモリセル領域1Aの各ゲート電極を構成するシリコンの飛散を防ぐことについて説明した。これに対し、以下に説明するように、スパッタリング装置内に多孔板を配置するコリメートスパッタリング法を用いても、シリサイド層S2の破壊およびメモリセル領域1Aの各ゲート電極を構成するシリコンの飛散を防ぐこと効果を得ることができる。
前記実施の形態では、図22に示す金属膜MF2を形成する際のスパッタリング工程においてターゲットTG(図13参照)に供給するエネルギーを小さくすることで、シリサイド層S2の破壊およびメモリセル領域1Aの各ゲート電極を構成するシリコンの飛散を防ぐことについて説明した。これに対し、以下に説明するように、スパッタリング装置内に多孔板を配置するコリメートスパッタリング法を用いても、シリサイド層S2の破壊およびメモリセル領域1Aの各ゲート電極を構成するシリコンの飛散を防ぐこと効果を得ることができる。
以下では、前記実施の形態1と異なり、研磨工程により薄いシリサイド層S2(図22参照)を形成せずに、制御ゲート電極およびメモリゲート電極の短絡およびそれらのゲート電極間の耐圧低下を防ぐことについて、図31〜図34を用いて説明する。図31〜図34は、本実施の形態の半導体装置の製造工程を説明する断面図である。図31〜図34では、図1などと同様に、メモリセル領域1Aおよび周辺回路領域1Bを示している。
以下では、図31を用いて説明したように、研磨工程において薄いシリサイド層S2(図17参照)を形成せず、そのような薄膜のシリサイド層を形成するためのサリサイド工程を追加することについて、図35〜図39を用いて説明する。図35〜図39は、本変形例の半導体装置の製造工程を説明する断面図である。図35〜図39では、図1などと同様に、メモリセル領域1Aおよび周辺回路領域1Bを示している。
以下では、前記実施の形態1と異なり、制御ゲート電極およびメモリゲート電極のそれぞれの上面を後退させることで、それらのゲート電極間の短絡および耐圧低下を防ぐことについて、図40〜図43を用いて説明する。図40〜図43は、本実施の形態の半導体装置の製造工程を説明する断面図である。図40〜図43では、図1などと同様に、メモリセル領域1Aおよび周辺回路領域1Bを示している。
以下では、制御ゲート電極およびメモリゲート電極のそれぞれの上面をエッチバックにより後退させ、かつ、それらのゲート電極の上面を保護する薄いシリサイド層を形成するサリサイド工程を追加して行うことについて、図44〜図48を用いて説明する。図44〜図48は、本変形例の半導体装置の製造工程を説明する断面図である。図44〜図48では、図1などと同様に、メモリセル領域1Aおよび周辺回路領域1Bを示している。
1B 周辺回路領域
CG 制御ゲート電極
DF 拡散領域
EX エクステンション領域
G1 ゲート電極
GI ゲート絶縁膜
HK 絶縁膜
IF1〜IF10 絶縁膜
IL1〜IL3 層間絶縁膜
MC メモリセル
MG メモリゲート電極
MF1〜MF3 金属膜
ON ONO膜
Q1 MISFET
SB 半導体基板
S1〜S5 シリサイド層
ST 素子分離領域
SW サイドウォール
TN 金属膜
Claims (12)
- 不揮発性メモリのメモリセルを備えた半導体装置の製造方法であって、
(a)半導体基板を用意する工程、
(b)前記半導体基板上に第1絶縁膜を介して形成された第1ゲート電極と、前記半導体基板上に、内部に電荷蓄積部を有する第2絶縁膜を介して形成された第2ゲート電極と、前記第1ゲート電極および前記第2ゲート電極の間に介在する第3絶縁膜とを設け、前記第1ゲート電極および前記第2ゲート電極を挟むように、前記半導体基板の主面に第1ソース・ドレイン領域を形成する工程、
(c)前記第1ソース・ドレイン領域の上面に接する第1シリサイド層と、前記第2ゲート電極の上面に接する第2シリサイド層とを形成する工程、
(d)前記(c)工程後、前記半導体基板上に第1層間絶縁膜を形成する工程、
(e)前記第1層間絶縁膜および前記第2シリサイド層を研磨することで、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上面を前記第1層間絶縁膜および前記第2シリサイド層から露出させ、前記第1ゲート電極の上面に接する第3シリサイド層と、前記第2ゲート電極の上面に接する第4シリサイド層とを形成する工程、
(f)前記(e)工程後、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上に第1金属膜を形成した後、熱処理によりシリサイド化を行うことで、前記第1ゲート電極の上面に接する第5シリサイド層と、前記第2ゲート電極の上面に接する第6シリサイド層とを形成する工程、
を有し、
前記第1ソース・ドレイン領域、前記第1ゲート電極、前記第2ゲート電極および前記第2絶縁膜は、前記メモリセルを構成する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記第3シリサイド層および前記第4シリサイド層は、前記第5シリサイド層および第6シリサイド層よりも膜厚が小さい、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(e)工程では、アルカリ性溶剤を含むスラリを用いて研磨を行うことで、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上面を前記第1層間絶縁膜および前記第2シリサイド層から露出させ、前記第3シリサイド層および前記第4シリサイド層を形成する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
(g)前記(f)工程後、前記メモリセル上に第2層間絶縁膜を形成した後、前記第1層間絶縁膜および前記第2層間絶縁膜を貫通するコンタクトプラグを形成する工程、
(h)前記第2層間絶縁膜上に、複数の第1溝を有する第3層間絶縁膜を形成する工程、
(i)第3スパッタリングを行うことで、前記第3層間絶縁膜上に第3金属膜を形成する工程、
(j)前記第3金属膜上により第4金属膜を形成した後、前記第3層間絶縁膜上の前記第3金属膜および前記第4金属膜を除去することにより、前記複数の第1溝のそれぞれの内側に埋め込まれた前記第3金属膜および前記第4金属膜を含む配線を形成する工程、
をさらに有し、
前記(f)工程では、第2スパッタリングを行うことで前記第1金属膜を形成した後、前記第5シリサイド層および前記第6シリサイド層を形成し、
前記第2スパッタリングにおいてスパッタ対象である第2ターゲットに印加する第2電源の大きさは、前記第3スパッタリングにおいてスパッタ対象である第3ターゲットに印加する第3電源の大きさよりも小さい、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(b)工程では、前記半導体基板の第1領域に、前記第1絶縁膜、第1ゲート電極、前記第2絶縁膜、前記第2ゲート電極および前記第1ソース・ドレイン領域を形成し、前記第1領域とは異なる第2領域の前記半導体基板上に、第4絶縁膜を介してダミーゲート電極を形成し、前記ダミーゲート電極の横の前記半導体基板の主面に第2ソース・ドレイン領域を形成し、
前記(c)工程では、前記第1シリサイド層および前記第2シリサイド層と、前記第2ソース・ドレイン領域の上面に接する第7シリサイド層とを形成し、
前記(e)工程では、前記第1層間絶縁膜および前記第2シリサイド層を研磨することで、前記第1ゲート電極、前記第2ゲート電極および前記ダミーゲート電極のそれぞれの上面を露出させ、
(e1)前記(e)工程の後、前記(f)工程の前に、前記ダミーゲート電極を除去することで第2溝を形成した後、前記第2溝内に金属ゲート電極を埋め混む工程をさらに有し、
前記第2ソース・ドレイン領域および前記金属ゲート電極は、電界効果トランジスタを構成する、半導体装置の製造方法。 - 不揮発性メモリのメモリセルを備えた半導体装置の製造方法であって、
(a)半導体基板を用意する工程、
(b)前記半導体基板上に第1絶縁膜を介して形成された第1ゲート電極と、前記半導体基板上に、内部に電荷蓄積部を有する第2絶縁膜を介して形成された第2ゲート電極と、前記第1ゲート電極および前記第2ゲート電極の間に介在する第3絶縁膜とを設け、前記第1ゲート電極および前記第2ゲート電極を挟むように、前記半導体基板の主面に第1ソース・ドレイン領域を形成する工程、
(c)前記第1ソース・ドレイン領域の上面に接する第1シリサイド層を形成する工程、
(d)前記(c)工程後、前記半導体基板上に第1層間絶縁膜を形成する工程、
(e)前記第1層間絶縁膜を研磨することで、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上面を前記第1層間絶縁膜から露出させる工程、
(f)前記(e)工程後、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上に第1金属膜を形成した後、熱処理によりシリサイド化を行うことで、前記第1ゲート電極の上面に接する第2シリサイド層と、前記第2ゲート電極の上面に接する第3シリサイド層とを形成する工程、
(g)前記(f)工程後、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上に第2金属膜を形成した後、熱処理によりシリサイド化を行うことで、前記第1ゲート電極の上面に接する第4シリサイド層と、前記第2ゲート電極の上面に接する第5シリサイド層とを形成する工程、
を有し、
前記第1ソース・ドレイン領域、前記第1ゲート電極、前記第2ゲート電極および前記第2絶縁膜は、前記メモリセルを構成し、
前記第2シリサイド層および前記第3シリサイド層は、前記第4シリサイド層および第5シリサイド層よりも膜厚が小さい、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
(e1)前記(e)工程後、前記(f)工程前に、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上面を前記半導体基板の主面側に後退させる工程をさらに有する、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記(f)工程では、第1スパッタリングを行うことで前記第1金属膜を形成した後、前記第2シリサイド層および前記第3シリサイド層を形成し、
前記(g)工程では、第2スパッタリングを行うことで前記第2金属膜を形成した後、前記第4シリサイド層および前記第5シリサイド層を形成し、
前記第1スパッタリングにおいてスパッタ対象である第1ターゲットに印加する第1電源の大きさは、前記第2スパッタリングにおいてスパッタ対象である第2ターゲットに印加する第2電源の大きさよりも小さい、半導体装置の製造方法。 - 不揮発性メモリのメモリセルを備えた半導体装置の製造方法であって、
(a)半導体基板を用意する工程、
(b)前記半導体基板上に第1絶縁膜を介して形成された第1ゲート電極と、前記半導体基板上に、内部に電荷蓄積部を有する第2絶縁膜を介して形成された第2ゲート電極と、前記第1ゲート電極および前記第2ゲート電極の間に介在する第3絶縁膜とを設け、前記第1ゲート電極および前記第2ゲート電極を挟むように、前記半導体基板の主面に第1ソース・ドレイン領域を形成する工程、
(c)前記第1ソース・ドレイン領域の上面に接する第1シリサイド層を形成する工程、
(d)前記(c)工程後、前記半導体基板上に第1層間絶縁膜を形成する工程、
(e)前記第1層間絶縁膜を研磨することで、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上面を前記第1層間絶縁膜から露出させる工程、
(f)前記(e)工程後、第1スパッタリングを行うことで前記第1ゲート電極および前記第2ゲート電極のそれぞれの上に第1金属膜を形成した後、熱処理によりシリサイド化を行うことで、前記第1ゲート電極の上面に接する第2シリサイド層と、前記第2ゲート電極の上面に接する第3シリサイド層とを形成する工程、
(g)前記(f)工程後、前記第1層間絶縁膜上に第2層間絶縁膜を形成した後、前記第1層間絶縁膜および前記第2層間絶縁膜を貫通するコンタクトプラグを形成する工程、
(h)前記第2層間絶縁膜上に、複数の溝を有する第3層間絶縁膜を形成する工程、
(i)第2スパッタリングを行うことで、前記第3層間絶縁膜上に第3金属膜を形成する工程、
(j)前記第3金属膜上により第4金属膜を形成した後、前記第3層間絶縁膜上の前記第3金属膜および前記第4金属膜を除去することにより、前記複数の溝のそれぞれの内側に埋め込まれた前記第3金属膜および前記第4金属膜を含む配線を形成する工程、
をさらに有し、
前記第1スパッタリングにおいてスパッタ対象である第1ターゲットに印加する第1電源の大きさは、前記第2スパッタリングにおいてスパッタ対象である第2ターゲットに印加する第2電源の大きさよりも小さい、半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
(e1)前記(e)工程後、前記(f)工程前に、前記第1ゲート電極および前記第2ゲート電極のそれぞれの上面を前記半導体基板の主面側に後退させる工程をさらに有する、半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記(f)工程では、前記第1ターゲットと前記半導体基板との間に、前記半導体基板の主面に対して垂直な方向に延在する貫通孔を複数有する多孔板を配置して前記第1スパッタリングを行うことで、第1金属膜を形成した後、前記第2シリサイド層および前記第3シリサイド層を形成する、半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記第1スパッタリングにおける前記第1ターゲットと前記半導体基板との間の距離は、前記第2スパッタリングにおける前記第2ターゲットと前記半導体基板との間の距離よりも大きい、半導体装置の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005259843A (ja) * | 2004-03-10 | 2005-09-22 | Renesas Technology Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2006324624A (ja) * | 2005-05-18 | 2006-11-30 | Samsung Electronics Co Ltd | 強誘電体薄膜の製造方法及びこれを用いた半導体装置の製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2006324624A (ja) * | 2005-05-18 | 2006-11-30 | Samsung Electronics Co Ltd | 強誘電体薄膜の製造方法及びこれを用いた半導体装置の製造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200014745A (ko) | 2017-05-31 | 2020-02-11 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 메모리 장치 및 메모리 장치의 제조 방법 |
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