JP2017050526A5 - - Google Patents
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- JP2017050526A5 JP2017050526A5 JP2016097400A JP2016097400A JP2017050526A5 JP 2017050526 A5 JP2017050526 A5 JP 2017050526A5 JP 2016097400 A JP2016097400 A JP 2016097400A JP 2016097400 A JP2016097400 A JP 2016097400A JP 2017050526 A5 JP2017050526 A5 JP 2017050526A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- channel
- channel layer
- memory device
- stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 7
- 239000002131 composite material Substances 0.000 claims 6
- 229910052732 germanium Inorganic materials 0.000 claims 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562212315P | 2015-08-31 | 2015-08-31 | |
| US62/212,315 | 2015-08-31 | ||
| US201662279068P | 2016-01-15 | 2016-01-15 | |
| US62/279,068 | 2016-01-15 | ||
| US15/078,156 US10020317B2 (en) | 2015-08-31 | 2016-03-23 | Memory device with multi-layer channel and charge trapping layer |
| US15/078,156 | 2016-03-23 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017050526A JP2017050526A (ja) | 2017-03-09 |
| JP2017050526A5 true JP2017050526A5 (https=) | 2019-01-31 |
| JP6669581B2 JP6669581B2 (ja) | 2020-03-18 |
Family
ID=58187821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016097400A Active JP6669581B2 (ja) | 2015-08-31 | 2016-05-13 | 多層チャネル及び電荷トラップ層を有するメモリデバイス |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10020317B2 (https=) |
| JP (1) | JP6669581B2 (https=) |
| KR (1) | KR102250029B1 (https=) |
| WO (1) | WO2017039784A1 (https=) |
Families Citing this family (41)
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| US9430735B1 (en) | 2012-02-23 | 2016-08-30 | Micron Technology, Inc. | Neural network in a memory device |
| US10134752B2 (en) | 2016-06-22 | 2018-11-20 | Samsung Electronics Co., Ltd. | Memory device |
| US10269824B2 (en) * | 2017-04-01 | 2019-04-23 | Intel Corporation | Non-volatile memory structures having multi-layer conductive channels |
| EP3580782A4 (en) | 2017-08-21 | 2020-12-02 | Yangtze Memory Technologies Co., Ltd. | STABLE THREE-DIMENSIONAL MEMORY DEVICES AND THEIR TRAINING PROCESSES |
| CN107527919A (zh) * | 2017-08-31 | 2017-12-29 | 长江存储科技有限责任公司 | 一种3d nand存储器件及其制造方法 |
| CN107658317B (zh) * | 2017-09-15 | 2019-01-01 | 长江存储科技有限责任公司 | 一种半导体装置及其制备方法 |
| US10283452B2 (en) | 2017-09-15 | 2019-05-07 | Yangtze Memory Technology Co., Ltd. | Three-dimensional memory devices having a plurality of NAND strings |
| CN109698162A (zh) * | 2017-10-20 | 2019-04-30 | 萨摩亚商费洛储存科技股份有限公司 | 三维存储元件及其制造方法 |
| US10283513B1 (en) * | 2017-11-06 | 2019-05-07 | Sandisk Technologies Llc | Three-dimensional memory device with annular blocking dielectrics and method of making thereof |
| US10957392B2 (en) * | 2018-01-17 | 2021-03-23 | Macronix International Co., Ltd. | 2D and 3D sum-of-products array for neuromorphic computing system |
| US11138497B2 (en) | 2018-07-17 | 2021-10-05 | Macronix International Co., Ltd | In-memory computing devices for neural networks |
| US10629608B2 (en) * | 2018-09-26 | 2020-04-21 | Macronix International Co., Ltd. | 3D vertical channel tri-gate NAND memory with tilted hemi-cylindrical structure |
| CN111341787B (zh) * | 2018-10-08 | 2021-08-27 | 长江存储科技有限责任公司 | 利用自然氧化层形成具有沟道结构的三维存储器件的方法 |
| US11636325B2 (en) | 2018-10-24 | 2023-04-25 | Macronix International Co., Ltd. | In-memory data pooling for machine learning |
| KR102670089B1 (ko) * | 2018-10-26 | 2024-05-28 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
| CN109473431A (zh) * | 2018-11-13 | 2019-03-15 | 中国科学院微电子研究所 | 一种三维铁电存储器及其制作方法 |
| US11562229B2 (en) | 2018-11-30 | 2023-01-24 | Macronix International Co., Ltd. | Convolution accelerator using in-memory computation |
| US11934480B2 (en) | 2018-12-18 | 2024-03-19 | Macronix International Co., Ltd. | NAND block architecture for in-memory multiply-and-accumulate operations |
| KR102681258B1 (ko) * | 2018-12-27 | 2024-07-03 | 에스케이하이닉스 주식회사 | 복수의 채널층을 구비하는 비휘발성 메모리 장치 |
| US11119674B2 (en) | 2019-02-19 | 2021-09-14 | Macronix International Co., Ltd. | Memory devices and methods for operating the same |
| JP2020141008A (ja) * | 2019-02-27 | 2020-09-03 | キオクシア株式会社 | 半導体記憶装置及びその製造方法 |
| US11132176B2 (en) | 2019-03-20 | 2021-09-28 | Macronix International Co., Ltd. | Non-volatile computing method in flash memory |
| CN110299362A (zh) * | 2019-07-16 | 2019-10-01 | 中国科学院微电子研究所 | 一种3d nand存储器及其制备方法 |
| KR102757200B1 (ko) | 2020-04-17 | 2025-01-20 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| US11562909B2 (en) * | 2020-05-22 | 2023-01-24 | Applied Materials, Inc. | Directional selective junction clean with field polymer protections |
| JP2022039622A (ja) * | 2020-08-28 | 2022-03-10 | キオクシア株式会社 | 半導体記憶装置、および半導体記憶装置の製造方法 |
| KR102862952B1 (ko) * | 2021-01-07 | 2025-09-22 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 제조 방법 |
| KR102666996B1 (ko) * | 2021-03-26 | 2024-05-17 | 한양대학교 산학협력단 | 다층막 구조의 채널층을 포함하는 3차원 플래시 메모리 및 그 제조 방법 |
| US20240057327A1 (en) * | 2021-01-11 | 2024-02-15 | Iucf-Hyu (Industry University Cooperation Foundation Hanyang University) | Three-dimensional flash memory including channel layer having multilayer structure, and method for manufacturing same |
| US12462873B2 (en) * | 2021-06-03 | 2025-11-04 | Sunrise Memory Corporation | Thin film storage transistor with silicon oxide nitride charge trapping layer |
| US11877446B2 (en) * | 2021-06-11 | 2024-01-16 | Sandisk Technologies Llc | Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same |
| US12137565B2 (en) | 2021-06-11 | 2024-11-05 | Sandisk Technologies Llc | Three-dimensional memory device with vertical word line barrier and methods for forming the same |
| US12299597B2 (en) | 2021-08-27 | 2025-05-13 | Macronix International Co., Ltd. | Reconfigurable AI system |
| KR102919913B1 (ko) * | 2021-09-08 | 2026-01-30 | 삼성전자주식회사 | 3차원 반도체 메모리 장치, 이의 제조 방법 및 이를 포함하는 전자 시스템 |
| US20230320090A1 (en) * | 2022-04-01 | 2023-10-05 | Micron Technology, Inc. | Nand pillar memory device and method |
| US12408342B2 (en) * | 2022-06-10 | 2025-09-02 | Macronix International Co., Ltd. | Memory device with multi-layered charge storage stack |
| US12232324B2 (en) * | 2022-09-27 | 2025-02-18 | Infineon Technologies LLC | Method of forming oxide-nitride-oxide stack of non-volatile memory and integration to CMOS process flow |
| US12321603B2 (en) | 2023-02-22 | 2025-06-03 | Macronix International Co., Ltd. | High bandwidth non-volatile memory for AI inference system |
| US12536404B2 (en) | 2023-02-22 | 2026-01-27 | Macronix International Co., Ltd. | Data optimization for high bandwidth (HBW) NVM AI inference system |
| US12585931B2 (en) * | 2023-05-04 | 2026-03-24 | Macronix International Co., Ltd. | 3D hybrid bonding 3D memory devices with NPU/CPU for AI inference application |
| US12417170B2 (en) | 2023-05-10 | 2025-09-16 | Macronix International Co., Ltd. | Computing system and method of operation thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001338988A (ja) | 2000-05-25 | 2001-12-07 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US6313487B1 (en) | 2000-06-15 | 2001-11-06 | Board Of Regents, The University Of Texas System | Vertical channel floating gate transistor having silicon germanium channel layer |
| US6544854B1 (en) | 2000-11-28 | 2003-04-08 | Lsi Logic Corporation | Silicon germanium CMOS channel |
| US6709935B1 (en) | 2001-03-26 | 2004-03-23 | Advanced Micro Devices, Inc. | Method of locally forming a silicon/geranium channel layer |
| US7274068B2 (en) | 2004-05-06 | 2007-09-25 | Micron Technology, Inc. | Ballistic direct injection NROM cell on strained silicon structures |
| US8592891B1 (en) * | 2007-05-25 | 2013-11-26 | Cypress Semiconductor Corp. | Methods for fabricating semiconductor memory with process induced strain |
| JP2011023705A (ja) * | 2009-06-18 | 2011-02-03 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US8592873B2 (en) * | 2010-06-24 | 2013-11-26 | Samsung Electronics Co., Ltd. | Semiconductor memory devices and methods of forming the same |
| US8928061B2 (en) * | 2010-06-30 | 2015-01-06 | SanDisk Technologies, Inc. | Three dimensional NAND device with silicide containing floating gates |
| KR20130070158A (ko) * | 2011-12-19 | 2013-06-27 | 에스케이하이닉스 주식회사 | 3차원 비휘발성 메모리 소자, 메모리 시스템 및 그 제조 방법 |
| US8828851B2 (en) * | 2012-02-01 | 2014-09-09 | Stmicroeletronics, Inc. | Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineering |
| JP2013201270A (ja) | 2012-03-23 | 2013-10-03 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JP6328607B2 (ja) * | 2012-03-29 | 2018-05-23 | サイプレス セミコンダクター コーポレーション | ロジックcmosフローへのono統合の方法 |
| KR20130117130A (ko) * | 2012-04-17 | 2013-10-25 | 삼성전자주식회사 | 비휘발성 메모리 소자의 게이트 구조물 |
| CN104769724B (zh) * | 2012-07-01 | 2018-09-18 | 赛普拉斯半导体公司 | 具有多个电荷存储层的存储器晶体管 |
| KR102003526B1 (ko) * | 2012-07-31 | 2019-07-25 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조방법 |
| US8946023B2 (en) * | 2013-03-12 | 2015-02-03 | Sandisk Technologies Inc. | Method of making a vertical NAND device using sequential etching of multilayer stacks |
| KR20150020845A (ko) * | 2013-08-19 | 2015-02-27 | 에스케이하이닉스 주식회사 | 수직 채널을 갖는 반도체 장치, 그를 포함하는 저항 변화 메모리 장치 및 그 제조방법 |
| US9460931B2 (en) * | 2013-09-17 | 2016-10-04 | Sandisk Technologies Llc | High aspect ratio memory hole channel contact formation |
| KR102101841B1 (ko) * | 2013-10-28 | 2020-04-17 | 삼성전자 주식회사 | 수직형 비휘발성 메모리 소자 |
| US9425257B2 (en) | 2013-11-20 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company Limited | Non-planar SiGe channel PFET |
| KR20150070819A (ko) * | 2013-12-17 | 2015-06-25 | 에스케이하이닉스 주식회사 | 반도체 메모리 소자 및 그 제조방법 |
-
2016
- 2016-03-23 US US15/078,156 patent/US10020317B2/en active Active
- 2016-05-13 JP JP2016097400A patent/JP6669581B2/ja active Active
- 2016-06-16 KR KR1020160075053A patent/KR102250029B1/ko active Active
- 2016-06-17 WO PCT/US2016/038229 patent/WO2017039784A1/en not_active Ceased
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