JP2017050526A5 - - Google Patents

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JP2017050526A5
JP2017050526A5 JP2016097400A JP2016097400A JP2017050526A5 JP 2017050526 A5 JP2017050526 A5 JP 2017050526A5 JP 2016097400 A JP2016097400 A JP 2016097400A JP 2016097400 A JP2016097400 A JP 2016097400A JP 2017050526 A5 JP2017050526 A5 JP 2017050526A5
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layer
channel
channel layer
memory device
stack
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JP2016097400A
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JP2017050526A (ja
JP6669581B2 (ja
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JP2016097400A 2015-08-31 2016-05-13 多層チャネル及び電荷トラップ層を有するメモリデバイス Active JP6669581B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562212315P 2015-08-31 2015-08-31
US62/212,315 2015-08-31
US201662279068P 2016-01-15 2016-01-15
US62/279,068 2016-01-15
US15/078,156 US10020317B2 (en) 2015-08-31 2016-03-23 Memory device with multi-layer channel and charge trapping layer
US15/078,156 2016-03-23

Publications (3)

Publication Number Publication Date
JP2017050526A JP2017050526A (ja) 2017-03-09
JP2017050526A5 true JP2017050526A5 (https=) 2019-01-31
JP6669581B2 JP6669581B2 (ja) 2020-03-18

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JP2016097400A Active JP6669581B2 (ja) 2015-08-31 2016-05-13 多層チャネル及び電荷トラップ層を有するメモリデバイス

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US (1) US10020317B2 (https=)
JP (1) JP6669581B2 (https=)
KR (1) KR102250029B1 (https=)
WO (1) WO2017039784A1 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9430735B1 (en) 2012-02-23 2016-08-30 Micron Technology, Inc. Neural network in a memory device
US10134752B2 (en) 2016-06-22 2018-11-20 Samsung Electronics Co., Ltd. Memory device
US10269824B2 (en) * 2017-04-01 2019-04-23 Intel Corporation Non-volatile memory structures having multi-layer conductive channels
EP3580782A4 (en) 2017-08-21 2020-12-02 Yangtze Memory Technologies Co., Ltd. STABLE THREE-DIMENSIONAL MEMORY DEVICES AND THEIR TRAINING PROCESSES
CN107527919A (zh) * 2017-08-31 2017-12-29 长江存储科技有限责任公司 一种3d nand存储器件及其制造方法
CN107658317B (zh) * 2017-09-15 2019-01-01 长江存储科技有限责任公司 一种半导体装置及其制备方法
US10283452B2 (en) 2017-09-15 2019-05-07 Yangtze Memory Technology Co., Ltd. Three-dimensional memory devices having a plurality of NAND strings
CN109698162A (zh) * 2017-10-20 2019-04-30 萨摩亚商费洛储存科技股份有限公司 三维存储元件及其制造方法
US10283513B1 (en) * 2017-11-06 2019-05-07 Sandisk Technologies Llc Three-dimensional memory device with annular blocking dielectrics and method of making thereof
US10957392B2 (en) * 2018-01-17 2021-03-23 Macronix International Co., Ltd. 2D and 3D sum-of-products array for neuromorphic computing system
US11138497B2 (en) 2018-07-17 2021-10-05 Macronix International Co., Ltd In-memory computing devices for neural networks
US10629608B2 (en) * 2018-09-26 2020-04-21 Macronix International Co., Ltd. 3D vertical channel tri-gate NAND memory with tilted hemi-cylindrical structure
CN111341787B (zh) * 2018-10-08 2021-08-27 长江存储科技有限责任公司 利用自然氧化层形成具有沟道结构的三维存储器件的方法
US11636325B2 (en) 2018-10-24 2023-04-25 Macronix International Co., Ltd. In-memory data pooling for machine learning
KR102670089B1 (ko) * 2018-10-26 2024-05-28 삼성전자주식회사 3차원 반도체 메모리 장치
CN109473431A (zh) * 2018-11-13 2019-03-15 中国科学院微电子研究所 一种三维铁电存储器及其制作方法
US11562229B2 (en) 2018-11-30 2023-01-24 Macronix International Co., Ltd. Convolution accelerator using in-memory computation
US11934480B2 (en) 2018-12-18 2024-03-19 Macronix International Co., Ltd. NAND block architecture for in-memory multiply-and-accumulate operations
KR102681258B1 (ko) * 2018-12-27 2024-07-03 에스케이하이닉스 주식회사 복수의 채널층을 구비하는 비휘발성 메모리 장치
US11119674B2 (en) 2019-02-19 2021-09-14 Macronix International Co., Ltd. Memory devices and methods for operating the same
JP2020141008A (ja) * 2019-02-27 2020-09-03 キオクシア株式会社 半導体記憶装置及びその製造方法
US11132176B2 (en) 2019-03-20 2021-09-28 Macronix International Co., Ltd. Non-volatile computing method in flash memory
CN110299362A (zh) * 2019-07-16 2019-10-01 中国科学院微电子研究所 一种3d nand存储器及其制备方法
KR102757200B1 (ko) 2020-04-17 2025-01-20 에스케이하이닉스 주식회사 반도체 메모리 장치
US11562909B2 (en) * 2020-05-22 2023-01-24 Applied Materials, Inc. Directional selective junction clean with field polymer protections
JP2022039622A (ja) * 2020-08-28 2022-03-10 キオクシア株式会社 半導体記憶装置、および半導体記憶装置の製造方法
KR102862952B1 (ko) * 2021-01-07 2025-09-22 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 제조 방법
KR102666996B1 (ko) * 2021-03-26 2024-05-17 한양대학교 산학협력단 다층막 구조의 채널층을 포함하는 3차원 플래시 메모리 및 그 제조 방법
US20240057327A1 (en) * 2021-01-11 2024-02-15 Iucf-Hyu (Industry University Cooperation Foundation Hanyang University) Three-dimensional flash memory including channel layer having multilayer structure, and method for manufacturing same
US12462873B2 (en) * 2021-06-03 2025-11-04 Sunrise Memory Corporation Thin film storage transistor with silicon oxide nitride charge trapping layer
US11877446B2 (en) * 2021-06-11 2024-01-16 Sandisk Technologies Llc Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same
US12137565B2 (en) 2021-06-11 2024-11-05 Sandisk Technologies Llc Three-dimensional memory device with vertical word line barrier and methods for forming the same
US12299597B2 (en) 2021-08-27 2025-05-13 Macronix International Co., Ltd. Reconfigurable AI system
KR102919913B1 (ko) * 2021-09-08 2026-01-30 삼성전자주식회사 3차원 반도체 메모리 장치, 이의 제조 방법 및 이를 포함하는 전자 시스템
US20230320090A1 (en) * 2022-04-01 2023-10-05 Micron Technology, Inc. Nand pillar memory device and method
US12408342B2 (en) * 2022-06-10 2025-09-02 Macronix International Co., Ltd. Memory device with multi-layered charge storage stack
US12232324B2 (en) * 2022-09-27 2025-02-18 Infineon Technologies LLC Method of forming oxide-nitride-oxide stack of non-volatile memory and integration to CMOS process flow
US12321603B2 (en) 2023-02-22 2025-06-03 Macronix International Co., Ltd. High bandwidth non-volatile memory for AI inference system
US12536404B2 (en) 2023-02-22 2026-01-27 Macronix International Co., Ltd. Data optimization for high bandwidth (HBW) NVM AI inference system
US12585931B2 (en) * 2023-05-04 2026-03-24 Macronix International Co., Ltd. 3D hybrid bonding 3D memory devices with NPU/CPU for AI inference application
US12417170B2 (en) 2023-05-10 2025-09-16 Macronix International Co., Ltd. Computing system and method of operation thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338988A (ja) 2000-05-25 2001-12-07 Hitachi Ltd 半導体装置及びその製造方法
US6313487B1 (en) 2000-06-15 2001-11-06 Board Of Regents, The University Of Texas System Vertical channel floating gate transistor having silicon germanium channel layer
US6544854B1 (en) 2000-11-28 2003-04-08 Lsi Logic Corporation Silicon germanium CMOS channel
US6709935B1 (en) 2001-03-26 2004-03-23 Advanced Micro Devices, Inc. Method of locally forming a silicon/geranium channel layer
US7274068B2 (en) 2004-05-06 2007-09-25 Micron Technology, Inc. Ballistic direct injection NROM cell on strained silicon structures
US8592891B1 (en) * 2007-05-25 2013-11-26 Cypress Semiconductor Corp. Methods for fabricating semiconductor memory with process induced strain
JP2011023705A (ja) * 2009-06-18 2011-02-03 Toshiba Corp 不揮発性半導体記憶装置
US8592873B2 (en) * 2010-06-24 2013-11-26 Samsung Electronics Co., Ltd. Semiconductor memory devices and methods of forming the same
US8928061B2 (en) * 2010-06-30 2015-01-06 SanDisk Technologies, Inc. Three dimensional NAND device with silicide containing floating gates
KR20130070158A (ko) * 2011-12-19 2013-06-27 에스케이하이닉스 주식회사 3차원 비휘발성 메모리 소자, 메모리 시스템 및 그 제조 방법
US8828851B2 (en) * 2012-02-01 2014-09-09 Stmicroeletronics, Inc. Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineering
JP2013201270A (ja) 2012-03-23 2013-10-03 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP6328607B2 (ja) * 2012-03-29 2018-05-23 サイプレス セミコンダクター コーポレーション ロジックcmosフローへのono統合の方法
KR20130117130A (ko) * 2012-04-17 2013-10-25 삼성전자주식회사 비휘발성 메모리 소자의 게이트 구조물
CN104769724B (zh) * 2012-07-01 2018-09-18 赛普拉斯半导体公司 具有多个电荷存储层的存储器晶体管
KR102003526B1 (ko) * 2012-07-31 2019-07-25 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
US8946023B2 (en) * 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
KR20150020845A (ko) * 2013-08-19 2015-02-27 에스케이하이닉스 주식회사 수직 채널을 갖는 반도체 장치, 그를 포함하는 저항 변화 메모리 장치 및 그 제조방법
US9460931B2 (en) * 2013-09-17 2016-10-04 Sandisk Technologies Llc High aspect ratio memory hole channel contact formation
KR102101841B1 (ko) * 2013-10-28 2020-04-17 삼성전자 주식회사 수직형 비휘발성 메모리 소자
US9425257B2 (en) 2013-11-20 2016-08-23 Taiwan Semiconductor Manufacturing Company Limited Non-planar SiGe channel PFET
KR20150070819A (ko) * 2013-12-17 2015-06-25 에스케이하이닉스 주식회사 반도체 메모리 소자 및 그 제조방법

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