JP2017045942A - 高周波半導体装置 - Google Patents
高周波半導体装置 Download PDFInfo
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- JP2017045942A JP2017045942A JP2015169303A JP2015169303A JP2017045942A JP 2017045942 A JP2017045942 A JP 2017045942A JP 2015169303 A JP2015169303 A JP 2015169303A JP 2015169303 A JP2015169303 A JP 2015169303A JP 2017045942 A JP2017045942 A JP 2017045942A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000010363 phase shift Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
図1(a)は第1の実施形態にかかる高周波半導体装置の模式斜視図、図1(b)はその部分拡大斜視図、である。
高周波半導体装置は、HEMT(High Electron Mobility Transistor)やMESFET(Metal Semiconductor Field Effect transistor)を含む電界効果トランジスタなどとする。
屈曲ゲート部21の幅の中心点を結ぶ線は、第1の直線15に対してジグザグ状に45°で交差する2つの直線領域J1、J2と、2つの直線領域の間に設けられた曲線領域J3、J4、J5、などを含む。直線領域J1、J2は、半径rの円にそれぞれ接するように配置される。2つの直線領域J1、J2は、90°で交差するものとする。
図4(a)の第1変形例に表すように、円の中心を第1の直線15上に配置してもよい。直線領域J1、J2は円の接線である。本図において、円弧状の曲線領域J3、J4、J5の中心角βは。90°よりも小さい。この場合、ゲート幅比率は図3に表す第1の実施形態よりも小さくなる。
また、図6(a)は第2の実施形態にかかる高周波半導体装置の屈曲ゲート部、屈曲ソース部、および屈曲ドレイン部の模式平面図、図6(b)はその部分拡大模式平面図、図6(c)はゲート電極、ソース電極、ドレイン電極の模式平面図、である。
また、図7は、屈曲ゲート部の構成を説明する模式図である。
互いに接する円を直線状に配列すると中心角が180°の円弧がジグザグ状に配列できる。しかしながら、ソース電極や、ドレイン電極を平行に配置することは困難である。このため、図6(b)に表すような第1の直線に沿ってジグザグ状に屈曲ゲート部121を延設できない。
Claims (5)
- 化合物半導体からなる積層体と、
前記積層体の表面にジグザグ状に延設され第1および第2の外縁を有する屈曲ゲート部と、第1の直線に沿って前記屈曲ゲート部の表面に延設された直線ゲート部と、を有する、ゲート電極と、
前記屈曲ゲート部の前記第1の外縁から法線方向に第1距離だけ離間した外縁を有し前記積層体の前記表面に延設された屈曲ソース部と、前記第1の直線に平行に前記屈曲ソース部の表面に延設された直線ソース部と、を有する、ソース電極と、
前記屈曲ゲート部の前記第2の外縁から前記屈曲ソース部とは反対の側の法線方向に第2距離だけ離間した外縁を有し前記積層体の前記表面に延設された屈曲ドレイン部と、前記第1の直線に沿って前記屈曲ドレイン部の表面に延設された直線ドレイン部と、を有する、ドレイン電極と、
を備えた高周波半導体装置。 - 前記屈曲ゲート部は、前記第1の直線に対してジグザグ状に交差する2つの直線領域と、前記2つの直線領域の間に設けられた曲線領域と、を含む請求項1記載の高周波半導体装置。
- 前記曲線領域は、円弧を含む請求項2記載の高周波半導体装置。
- 前記屈曲ゲート部は、ジグザグ状に延設された円弧を含む請求項1記載の高周波半導体装置。
- 前記円弧の中心角は、90°である請求項3または4に記載の高周波半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015169303A JP6268132B2 (ja) | 2015-08-28 | 2015-08-28 | 高周波半導体装置 |
US15/238,857 US9691865B2 (en) | 2015-08-28 | 2016-08-17 | High frequency semiconductor device |
EP16185107.6A EP3136442A1 (en) | 2015-08-28 | 2016-08-22 | High frequency semiconductor device |
Applications Claiming Priority (1)
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JP2015169303A JP6268132B2 (ja) | 2015-08-28 | 2015-08-28 | 高周波半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2017045942A true JP2017045942A (ja) | 2017-03-02 |
JP6268132B2 JP6268132B2 (ja) | 2018-01-24 |
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JP2015169303A Expired - Fee Related JP6268132B2 (ja) | 2015-08-28 | 2015-08-28 | 高周波半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9691865B2 (ja) |
EP (1) | EP3136442A1 (ja) |
JP (1) | JP6268132B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10069002B2 (en) | 2016-07-20 | 2018-09-04 | Semiconductor Components Industries, Llc | Bond-over-active circuity gallium nitride devices |
KR102424875B1 (ko) * | 2017-07-03 | 2022-07-26 | 삼성전자주식회사 | 반도체 소자 |
CN114188407B (zh) * | 2022-02-17 | 2022-05-06 | 深圳市时代速信科技有限公司 | 一种半导体器件电极结构、制作方法及半导体器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60149174A (ja) * | 1984-01-17 | 1985-08-06 | Toshiba Corp | 電界効果型半導体装置 |
JPH04171734A (ja) * | 1990-11-02 | 1992-06-18 | Mitsubishi Electric Corp | 半導体装置 |
JP2001028425A (ja) * | 1999-07-15 | 2001-01-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2011124282A (ja) * | 2009-12-08 | 2011-06-23 | Sharp Corp | 電界効果トランジスタ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03191533A (ja) | 1989-12-21 | 1991-08-21 | Sony Corp | 電界効果トランジスタ |
US6448587B1 (en) * | 1997-11-28 | 2002-09-10 | Hitachi, Ltd. | Circuit incorporated IGBT and power conversion device using the same |
TW200642268A (en) * | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
JP2007243018A (ja) | 2006-03-10 | 2007-09-20 | Toshiba Corp | 半導体装置のセル配置方法 |
JP2007274181A (ja) | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体装置 |
JP4965982B2 (ja) | 2006-12-04 | 2012-07-04 | 株式会社東芝 | 電界効果トランジスタ |
US8653565B1 (en) | 2010-08-11 | 2014-02-18 | Sarda Technologies, Inc. | Mixed mode multiple switch integration of multiple compound semiconductor FET devices |
JP5728258B2 (ja) * | 2011-03-10 | 2015-06-03 | 株式会社東芝 | 半導体装置 |
JP2014175368A (ja) | 2013-03-06 | 2014-09-22 | Toshiba Corp | 電界効果トランジスタおよび半導体装置 |
JP2015173161A (ja) | 2014-03-11 | 2015-10-01 | 株式会社東芝 | 電界効果トランジスタ |
EP2988334A3 (en) | 2014-08-22 | 2016-03-30 | Kabushiki Kaisha Toshiba | Field effect transistor and semiconductor device |
-
2015
- 2015-08-28 JP JP2015169303A patent/JP6268132B2/ja not_active Expired - Fee Related
-
2016
- 2016-08-17 US US15/238,857 patent/US9691865B2/en not_active Expired - Fee Related
- 2016-08-22 EP EP16185107.6A patent/EP3136442A1/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60149174A (ja) * | 1984-01-17 | 1985-08-06 | Toshiba Corp | 電界効果型半導体装置 |
JPH04171734A (ja) * | 1990-11-02 | 1992-06-18 | Mitsubishi Electric Corp | 半導体装置 |
JP2001028425A (ja) * | 1999-07-15 | 2001-01-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2011124282A (ja) * | 2009-12-08 | 2011-06-23 | Sharp Corp | 電界効果トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
EP3136442A1 (en) | 2017-03-01 |
JP6268132B2 (ja) | 2018-01-24 |
US9691865B2 (en) | 2017-06-27 |
US20170062576A1 (en) | 2017-03-02 |
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