JP2017028111A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2017028111A
JP2017028111A JP2015145405A JP2015145405A JP2017028111A JP 2017028111 A JP2017028111 A JP 2017028111A JP 2015145405 A JP2015145405 A JP 2015145405A JP 2015145405 A JP2015145405 A JP 2015145405A JP 2017028111 A JP2017028111 A JP 2017028111A
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JP
Japan
Prior art keywords
layer
sample
electrode block
processing apparatus
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015145405A
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English (en)
Japanese (ja)
Other versions
JP2017028111A5 (enExample
Inventor
匠 丹藤
Takumi Tando
匠 丹藤
賢悦 横川
Kenetsu Yokogawa
賢悦 横川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2015145405A priority Critical patent/JP2017028111A/ja
Priority to US15/203,851 priority patent/US20170025255A1/en
Priority to TW105123068A priority patent/TWI614791B/zh
Priority to KR1020160092735A priority patent/KR101835435B1/ko
Publication of JP2017028111A publication Critical patent/JP2017028111A/ja
Publication of JP2017028111A5 publication Critical patent/JP2017028111A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
JP2015145405A 2015-07-23 2015-07-23 プラズマ処理装置 Pending JP2017028111A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015145405A JP2017028111A (ja) 2015-07-23 2015-07-23 プラズマ処理装置
US15/203,851 US20170025255A1 (en) 2015-07-23 2016-07-07 Plasma processing apparatus
TW105123068A TWI614791B (zh) 2015-07-23 2016-07-21 電漿處理裝置
KR1020160092735A KR101835435B1 (ko) 2015-07-23 2016-07-21 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015145405A JP2017028111A (ja) 2015-07-23 2015-07-23 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2017028111A true JP2017028111A (ja) 2017-02-02
JP2017028111A5 JP2017028111A5 (enExample) 2018-08-02

Family

ID=57836165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015145405A Pending JP2017028111A (ja) 2015-07-23 2015-07-23 プラズマ処理装置

Country Status (4)

Country Link
US (1) US20170025255A1 (enExample)
JP (1) JP2017028111A (enExample)
KR (1) KR101835435B1 (enExample)
TW (1) TWI614791B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140155A (ja) * 2018-02-06 2019-08-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN111095497A (zh) * 2018-06-12 2020-05-01 东京毅力科创株式会社 等离子体处理装置以及控制其高频电源的方法
JP2021044305A (ja) * 2019-09-09 2021-03-18 日本特殊陶業株式会社 保持装置および保持装置の製造方法
JP2021044304A (ja) * 2019-09-09 2021-03-18 日本特殊陶業株式会社 保持装置
JPWO2022215680A1 (enExample) * 2021-04-06 2022-10-13
WO2023175690A1 (ja) * 2022-03-14 2023-09-21 株式会社日立ハイテク プラズマ処理装置
WO2023228853A1 (ja) * 2022-05-26 2023-11-30 東京エレクトロン株式会社 基板処理装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7059064B2 (ja) * 2018-03-26 2022-04-25 株式会社日立ハイテク プラズマ処理装置
CN111801786B (zh) * 2019-02-08 2023-12-29 株式会社日立高新技术 等离子处理装置
KR102718018B1 (ko) * 2021-12-16 2024-10-18 (주)티티에스 정전척
US20250292991A1 (en) * 2024-03-15 2025-09-18 Applied Materials, Inc. Shielding for immersed plasma source

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1145878A (ja) * 1997-07-28 1999-02-16 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP2008527694A (ja) * 2004-12-30 2008-07-24 ラム リサーチ コーポレイション 基板を空間的かつ時間的に温度制御するための装置
JP2011176275A (ja) * 2010-01-29 2011-09-08 Sumitomo Osaka Cement Co Ltd 静電チャック装置
WO2014099559A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Single-body electrostatic chuck
JP2014130908A (ja) * 2012-12-28 2014-07-10 Ngk Spark Plug Co Ltd 静電チャック
JP2014160790A (ja) * 2013-01-24 2014-09-04 Tokyo Electron Ltd 基板処理装置及び載置台
JP2015517225A (ja) * 2012-04-24 2015-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高度なｒｆ及び温度の均一性を備えた静電チャック

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW285813B (enExample) * 1993-10-04 1996-09-11 Tokyo Electron Tohoku Kk
JPH09260474A (ja) 1996-03-22 1997-10-03 Sony Corp 静電チャックおよびウエハステージ
JP6081292B2 (ja) * 2012-10-19 2017-02-15 東京エレクトロン株式会社 プラズマ処理装置
US9916998B2 (en) * 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
CN104377155B (zh) * 2013-08-14 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
JP2015082384A (ja) * 2013-10-22 2015-04-27 東京エレクトロン株式会社 プラズマ処理装置、給電ユニット、及び載置台システム

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1145878A (ja) * 1997-07-28 1999-02-16 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP2008527694A (ja) * 2004-12-30 2008-07-24 ラム リサーチ コーポレイション 基板を空間的かつ時間的に温度制御するための装置
JP2011176275A (ja) * 2010-01-29 2011-09-08 Sumitomo Osaka Cement Co Ltd 静電チャック装置
JP2015517225A (ja) * 2012-04-24 2015-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高度なｒｆ及び温度の均一性を備えた静電チャック
WO2014099559A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Single-body electrostatic chuck
JP2014130908A (ja) * 2012-12-28 2014-07-10 Ngk Spark Plug Co Ltd 静電チャック
JP2014160790A (ja) * 2013-01-24 2014-09-04 Tokyo Electron Ltd 基板処理装置及び載置台

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140155A (ja) * 2018-02-06 2019-08-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7002357B2 (ja) 2018-02-06 2022-01-20 株式会社日立ハイテク プラズマ処理装置
CN111095497A (zh) * 2018-06-12 2020-05-01 东京毅力科创株式会社 等离子体处理装置以及控制其高频电源的方法
CN111095497B (zh) * 2018-06-12 2024-05-07 东京毅力科创株式会社 等离子体处理装置以及控制其高频电源的方法
JP2021044305A (ja) * 2019-09-09 2021-03-18 日本特殊陶業株式会社 保持装置および保持装置の製造方法
JP2021044304A (ja) * 2019-09-09 2021-03-18 日本特殊陶業株式会社 保持装置
WO2022215680A1 (ja) * 2021-04-06 2022-10-13 東京エレクトロン株式会社 プラズマ処理装置及び電極機構
JPWO2022215680A1 (enExample) * 2021-04-06 2022-10-13
JP7682260B2 (ja) 2021-04-06 2025-05-23 東京エレクトロン株式会社 プラズマ処理装置及び電極機構
WO2023175690A1 (ja) * 2022-03-14 2023-09-21 株式会社日立ハイテク プラズマ処理装置
JPWO2023175690A1 (enExample) * 2022-03-14 2023-09-21
JP7509997B2 (ja) 2022-03-14 2024-07-02 株式会社日立ハイテク プラズマ処理装置
WO2023228853A1 (ja) * 2022-05-26 2023-11-30 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
US20170025255A1 (en) 2017-01-26
KR20170012106A (ko) 2017-02-02
TW201715561A (zh) 2017-05-01
KR101835435B1 (ko) 2018-03-08
TWI614791B (zh) 2018-02-11

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