JP2017017290A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP2017017290A JP2017017290A JP2015135531A JP2015135531A JP2017017290A JP 2017017290 A JP2017017290 A JP 2017017290A JP 2015135531 A JP2015135531 A JP 2015135531A JP 2015135531 A JP2015135531 A JP 2015135531A JP 2017017290 A JP2017017290 A JP 2017017290A
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- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims description 43
- 230000001681 protective effect Effects 0.000 claims description 20
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 238000012545 processing Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
- H01L21/784—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Toxicology (AREA)
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- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
図1には、本発明によるウエーハの加工方法によって分割されるシリコンウエーハ2と、該シリコンウエーハ2の表面側2aに形成されたデバイス21を保護すべく保護部材としての、例えば塩化ビニールからなる保護テープ3を貼着し(図1(a)を参照)、被加工物としてのウエーハを形成する(図1(b)を参照)工程が示されている。図1に示されるシリコンウエーハ2は、表面2aに格子状に形成された複数のストリートによって複数の領域が区画され、この区画された領域にIC、LSI等の該デバイス21が形成される。
上記したように、シリコンウエーハ2の表面2aに保護テープ3を配設したならば、図2に示すようなレーザー加工装置における、レーザー加工用チャックテーブル31上に、前記シリコンウエーハ2の保護テープ3側を位置付けて載置する。そして、当該シリコンウエーハ2に対して透過性を有する波長のレーザー光線をウエーハ2の裏面2b側から分割予定ラインの内部に集光点を位置付けて照射し、チャックテーブル31を矢印Xで示す方向に後述する所定の加工送り速度で加工送りし、改質層を形成する。
前記シリコンウエーハ2は、前記改質層形成工程により全分割予定ライン24に沿って内部に改質層が形成された後、図4に示すように、該ウエーハ2の保護テープ3側を下側にして、すなわち裏面2b側を上面にして研削装置の回転可能に構成されたチャックテーブル40に載置される。該チャックテーブル40の上面は、通気可能なポーラスセラミックからなる吸着チャック41により構成され、図示しない吸引手段により吸引され、シリコンウエーハ2が強固に保持される。
光源 :LD励起QスイッチNd:YVO4レーザー
波長 :1342nmのパルスレーザー
繰り返し周波数 :60kHz
集光点スポット :φ1.0μm
加工送り速度 :500mm/秒
被加工物 :シリコンウエーハ
厚み :700μm
改質層位置形成範囲 :45μm〜180μm(シリコンウエーハ2の下面位置を基準
とし、改質層は3層で形成)
0.1W 0.16 0 0 NG (分割できず)
0.2W 0.33 0 0 NG (分割できず)
0.3W 0.5 5 0 NG (分割できず)
0.4W 0.67 10 5 OK
0.5W 0.83 15 7 OK
0.6W 1.0 20 9 OK
0.7W 1.17 30 20 NG (欠けあり)
0.8W 1.33 35 30 NG (欠けあり)
0.9W 1.5 40 35 NG (欠けあり)
1.0W 1.67 45 40 NG (欠けあり)
*[パワー]は、パルスレーザー光線の1パルス当たりのパワーであり[10−5J/1パルス]を単位とし、[改質層]及び[クラック]の長さは[μm]を単位とする。なお、[改質層]の長さは、1層当たりの深さ方向の高さを示す。
3:保護テープ
4:研削装置
21:デバイス
22:改質層
23:クラック
24:分割予定ライン
31、40:チャックテーブル
42:研削ホイール
43:研削手段
Claims (1)
- 複数のデバイスが分割予定ラインによって区画された表面に形成されたウエーハを個々のデバイスに分割するウエーハの加工方法であって、
ウエーハの表面に保護部材を配設する保護部材配設工程と、
該保護部材が配設されたウエーハに対して透過性を有する波長のパルスレーザー光線の集光点を分割予定ラインの内部に位置付けると共に、該パルスレーザー光線を所定のパワーにて照射し、改質層と、該改質層から表裏面に向かって伸びるクラックとを形成する改質層形成工程と、
該保護部材側をチャックテーブルに保持し、ウエーハの裏面を所定の研削条件にて研削ホイールで研削して個々のデバイスに分割するとともに、該改質層を除去し目標仕上がり厚みに達するまで研削する裏面研削工程と、
を含み、
該改質層形成工程において設定される上記パルスレーザー光線の該所定のパワーは、該裏面研削工程にて設定される該所定の研削条件にて研削することにより、目標仕上がり厚みに達する前に該ウエーハを個々のデバイスに分割可能で且つ個々のデバイスに分割された後、該目標仕上がり厚みに達するまでの時間において個々のデバイス同士が擦れて損傷が生じることのない時間となる改質層及びクラックを形成するパワーに設定される、ウエーハの加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015135531A JP6560040B2 (ja) | 2015-07-06 | 2015-07-06 | ウエーハの加工方法 |
TW105117584A TWI683359B (zh) | 2015-07-06 | 2016-06-03 | 晶圓的加工方法 |
SG10201604691WA SG10201604691WA (en) | 2015-07-06 | 2016-06-09 | Wafer processing method |
KR1020160081353A KR102429205B1 (ko) | 2015-07-06 | 2016-06-29 | 웨이퍼의 가공 방법 |
US15/202,142 US9583391B2 (en) | 2015-07-06 | 2016-07-05 | Wafer processing method |
CN201610522458.2A CN106340490B (zh) | 2015-07-06 | 2016-07-05 | 晶片的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015135531A JP6560040B2 (ja) | 2015-07-06 | 2015-07-06 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017017290A true JP2017017290A (ja) | 2017-01-19 |
JP6560040B2 JP6560040B2 (ja) | 2019-08-14 |
Family
ID=57731458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015135531A Active JP6560040B2 (ja) | 2015-07-06 | 2015-07-06 | ウエーハの加工方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9583391B2 (ja) |
JP (1) | JP6560040B2 (ja) |
KR (1) | KR102429205B1 (ja) |
CN (1) | CN106340490B (ja) |
SG (1) | SG10201604691WA (ja) |
TW (1) | TWI683359B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021054353A1 (ja) * | 2019-09-18 | 2021-03-25 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
JP2021048236A (ja) * | 2019-09-18 | 2021-03-25 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
US12023761B2 (en) | 2019-09-18 | 2024-07-02 | Hamamatsu Photonics K.K. | Inspection device and inspection method |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
JP2017107921A (ja) * | 2015-12-07 | 2017-06-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP6649308B2 (ja) * | 2017-03-22 | 2020-02-19 | キオクシア株式会社 | 半導体装置およびその製造方法 |
JP7007052B2 (ja) * | 2017-09-19 | 2022-01-24 | 株式会社ディスコ | ウェーハの加工方法 |
DE102018202254A1 (de) | 2018-02-14 | 2019-08-14 | Disco Corporation | Verfahren zum Bearbeiten eines Wafers |
JP7081993B2 (ja) * | 2018-06-19 | 2022-06-07 | 株式会社ディスコ | 被加工物の加工方法 |
JP7118804B2 (ja) | 2018-08-17 | 2022-08-16 | キオクシア株式会社 | 半導体装置の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015050226A (ja) * | 2013-08-30 | 2015-03-16 | 株式会社ディスコ | ウェーハの加工方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3252806B1 (en) * | 2002-03-12 | 2019-10-09 | Hamamatsu Photonics K.K. | Substrate dividing method |
JP5443104B2 (ja) * | 2009-09-14 | 2014-03-19 | 株式会社ディスコ | ウエーハの加工方法 |
JP2012104778A (ja) | 2010-11-15 | 2012-05-31 | Disco Abrasive Syst Ltd | 光デバイスウエーハの分割方法 |
JP5939769B2 (ja) | 2011-11-11 | 2016-06-22 | 株式会社ディスコ | 板状物の加工方法 |
JP5770677B2 (ja) * | 2012-05-08 | 2015-08-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP2014209523A (ja) | 2013-04-16 | 2014-11-06 | 株式会社ディスコ | ウェーハの加工方法 |
-
2015
- 2015-07-06 JP JP2015135531A patent/JP6560040B2/ja active Active
-
2016
- 2016-06-03 TW TW105117584A patent/TWI683359B/zh active
- 2016-06-09 SG SG10201604691WA patent/SG10201604691WA/en unknown
- 2016-06-29 KR KR1020160081353A patent/KR102429205B1/ko active IP Right Grant
- 2016-07-05 CN CN201610522458.2A patent/CN106340490B/zh active Active
- 2016-07-05 US US15/202,142 patent/US9583391B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015050226A (ja) * | 2013-08-30 | 2015-03-16 | 株式会社ディスコ | ウェーハの加工方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021054353A1 (ja) * | 2019-09-18 | 2021-03-25 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
JP2021048235A (ja) * | 2019-09-18 | 2021-03-25 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
JP2021048236A (ja) * | 2019-09-18 | 2021-03-25 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
WO2021054372A1 (ja) * | 2019-09-18 | 2021-03-25 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
JP7305495B2 (ja) | 2019-09-18 | 2023-07-10 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
JP7391583B2 (ja) | 2019-09-18 | 2023-12-05 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
US12023761B2 (en) | 2019-09-18 | 2024-07-02 | Hamamatsu Photonics K.K. | Inspection device and inspection method |
Also Published As
Publication number | Publication date |
---|---|
KR102429205B1 (ko) | 2022-08-03 |
US9583391B2 (en) | 2017-02-28 |
TW201705255A (zh) | 2017-02-01 |
KR20170005760A (ko) | 2017-01-16 |
TWI683359B (zh) | 2020-01-21 |
CN106340490A (zh) | 2017-01-18 |
US20170011965A1 (en) | 2017-01-12 |
SG10201604691WA (en) | 2017-02-27 |
CN106340490B (zh) | 2020-06-19 |
JP6560040B2 (ja) | 2019-08-14 |
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