JP2017014193A - ポリアリーレン材料 - Google Patents
ポリアリーレン材料 Download PDFInfo
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Abstract
Description
各R11は、独立して、ハロゲン、C1−6アルキル、ハロC1−6アルキル、C1−6アルコキシ、ハロC1−6アルコキシ、フェニル、及びフェノキシから選択され、c3は、0〜4の整数であり、d3及びeは各々、0〜3の整数でり、各Zは、独立して、O、S、NR12、PR12、P(=O)R12、C(=O)、CR13R14、及びSiR13R14から選択され、R12、R13、及びR14は、独立して、H、C1−4アルキル、ハロC1−4アルキル、及びフェニルから選択される。xは、1または2、より好ましくは、1であることが好ましい。yは、0または1、より好ましくは、1であることが好ましい。好ましくは、各R11は、独立して、ハロゲン、C1−4アルキル、ハロC1−4アルキル、C1−4アルコキシ、ハロC1−4アルコキシ、及びフェニルから、より好ましくは、フルオロ、C1−4アルキル、フルオロC1−4アルキル、C1−4アルコキシ、フルオロC1−4アルコキシ、及びフェニルから選択される。c3は、0〜3、より好ましくは、0〜2、さらにより好ましくは、0または1であることが好ましい。d3及びeは各々、独立して、0〜2、より好ましくは、0または1であることが好ましい。式(12)において、d3+eは、0〜4、より好ましくは、0〜2であることが好ましい。各Zは、好ましくは、独立して、O、S、NR12、C(=O)、CR13R14、及びSiR13R14から、より好ましくは、O、S、C(=O)、及びCR13R14から、さらにより好ましくは、O、C(=O)、及びCR13R14から選択される。各R12、R13、及びR14は、独立して、H、C1−4アルキル、フルオロC1−4アルキル、及びフェニルから、より好ましくは、H、C1−4アルキル、フルオロC1−2アルキル、及びフェニルから選択されることが好ましい。好ましくは、各Ar4は、式(11)を有する。
Claims (13)
- ポリアリーレンポリマーであって、重合単位として、
式(1)の1つ以上の第1のモノマーであって、
2つのシクロペンタジエノン部分を含む1つ以上の第2のモノマーと、を含む、前記ポリアリーレンポリマー。 - R15は、フェニルである、請求項2に記載の前記ポリアリーレンポリマー。
- R1は、−OH、−C(=O)OR3、−C(=O)N(R4)2、−O−C(=O)R5、−S(=O)2−OR5、及びS(=O)2−N(R4)2から選択される、請求項1に記載の前記ポリアリーレンポリマー。
- R3は、H、C1−6アルキル、C1−6ヒドロキシアルキル、またはMであり、R4は、H、またはC1−6アルキルであり、R5は、H、C1−6アルキル、−O(C1−6アルキル)、または−NH(C1−6アルキル)であり、R7は、HまたはC1−6アルキルである、請求項4に記載の前記ポリアリーレンポリマー。
- R1は、−OH及び−C(=O)OR3から選択される、請求項4に記載の前記ポリアリーレンポリマー。
- Rは、Hまたはフェニルである、請求項1に記載の前記ポリアリーレンポリマー。
- Ar1及びAr2は、独立して、フェニル、ナフチル、アントラセニル、フェナントリル、ピレニル、コロネニル、テトラセニル、ペンタセニル、トリフェニレニル、及びぺリレニルから選択される、請求項1に記載の前記ポリフェニレンポリマー。
- 請求項1に記載の1つ以上のポリアリーレンポリマー及び1つ以上の有機溶媒を含む、組成物。
- 前記1つ以上の有機溶媒は、プロピレングリコールメチルエーテル、プロピレングリコールメチルエーテルアセテート、メチル3−メトキシプロピオナート、乳酸エチル、n−ブチルアセテート、アニソール、N−メチルピロリドン、ガンマ−ブチロラクトン、エトキシベンゼン、ベンジルプロピオナート、ベンジルベンゾエート、プロピレンカーボネート、及びそれらの混合物から選択される、請求項11に記載の前記組成物。
- 基板表面上に請求項11に記載の前記組成物の層を配置することと、前記有機溶媒を除去することと、前記オリゴマーを硬化させて、誘電材料層を形成することと、を含む、誘電材料層を形成する方法。
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Application Number | Priority Date | Filing Date | Title |
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US201562188943P | 2015-07-06 | 2015-07-06 | |
US62/188,943 | 2015-07-06 | ||
US15/056,352 | 2016-02-29 | ||
US15/056,352 US20170009006A1 (en) | 2015-07-06 | 2016-02-29 | Polyarylene materials |
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JP2017014193A true JP2017014193A (ja) | 2017-01-19 |
JP2017014193A5 JP2017014193A5 (ja) | 2018-06-14 |
JP6423821B2 JP6423821B2 (ja) | 2018-11-14 |
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JP2016122011A Active JP6423821B2 (ja) | 2015-07-06 | 2016-06-20 | ポリアリーレン材料 |
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US (1) | US20170009006A1 (ja) |
EP (2) | EP3248997A1 (ja) |
JP (1) | JP6423821B2 (ja) |
KR (1) | KR101809580B1 (ja) |
CN (1) | CN106336356B (ja) |
TW (2) | TWI655222B (ja) |
Cited By (5)
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JP2018095857A (ja) * | 2016-12-14 | 2018-06-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ポリアリーレン組成物及び方法 |
JP2018100398A (ja) * | 2016-12-19 | 2018-06-28 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ポリアリーレン樹脂 |
KR20200146022A (ko) * | 2019-06-23 | 2020-12-31 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 기상 분석물을 감지하는 가스 센서 및 방법 |
EP4043448A1 (en) | 2021-02-15 | 2022-08-17 | Shin-Etsu Chemical Co., Ltd. | Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film |
EP4187320A1 (en) | 2021-11-25 | 2023-05-31 | Shin-Etsu Chemical Co., Ltd. | Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process |
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US10703692B2 (en) * | 2017-02-06 | 2020-07-07 | Raytheon Company | Solid state materials with tunable dielectric response and rotational anisotropy |
JP2019124687A (ja) | 2018-01-15 | 2019-07-25 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 音波センサおよび気相分析物を検知する方法 |
US20200348592A1 (en) * | 2019-04-30 | 2020-11-05 | Rohm And Haas Electronic Materials Llc | Resist underlayer compositions and methods of forming patterns with such compositions |
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EP4043448A1 (en) | 2021-02-15 | 2022-08-17 | Shin-Etsu Chemical Co., Ltd. | Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film |
EP4187320A1 (en) | 2021-11-25 | 2023-05-31 | Shin-Etsu Chemical Co., Ltd. | Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process |
KR20230077675A (ko) | 2021-11-25 | 2023-06-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 유기막 형성 재료, 반도체 장치 제조용 기판, 유기막의 형성 방법, 패턴 형성 방법 |
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JP6423821B2 (ja) | 2018-11-14 |
TW201702281A (zh) | 2017-01-16 |
CN106336356B (zh) | 2019-09-24 |
TW201819454A (zh) | 2018-06-01 |
TWI655222B (zh) | 2019-04-01 |
US20170009006A1 (en) | 2017-01-12 |
TWI624489B (zh) | 2018-05-21 |
EP3248997A1 (en) | 2017-11-29 |
KR101809580B1 (ko) | 2017-12-15 |
CN106336356A (zh) | 2017-01-18 |
EP3115392A1 (en) | 2017-01-11 |
KR20170005757A (ko) | 2017-01-16 |
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