JP6525391B2 - 下層のための芳香族樹脂 - Google Patents
下層のための芳香族樹脂 Download PDFInfo
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- JP6525391B2 JP6525391B2 JP2017226511A JP2017226511A JP6525391B2 JP 6525391 B2 JP6525391 B2 JP 6525391B2 JP 2017226511 A JP2017226511 A JP 2017226511A JP 2017226511 A JP2017226511 A JP 2017226511A JP 6525391 B2 JP6525391 B2 JP 6525391B2
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L49/00—Compositions of homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bonds; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D149/00—Coating compositions based on homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bonds; Coating compositions based on derivatives of such polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/12—Copolymers
- C08G2261/124—Copolymers alternating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/22—Molecular weight
- C08G2261/228—Polymers, i.e. more than 10 repeat units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/312—Non-condensed aromatic systems, e.g. benzene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
- C08G2261/344—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing heteroatoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/35—Macromonomers, i.e. comprising more than 10 repeat units
- C08G2261/354—Macromonomers, i.e. comprising more than 10 repeat units containing hetero atoms
Description
Claims (12)
- 式(1)の1つ以上の第1のモノマー及び、2つ以上のシクロペンタジエノン部分を含む1つ以上の第2のモノマーを重合単位として含むポリアリーレン樹脂であって、
式中、Arは、C5−60−アリール部分であり、各Ar3及びAr4は、独立して、C5−30−アリール部分であり、各R1は、独立して、−OH及び−C(=O)OR 3 から選択され、各R2は、独立して、C1−10−アルキル、C1−10−ハロアルキル、C5−30−アリール、CN、及びハロから選択され、R3=HまたはMであり、M=アルカリ金属イオン、アルカリ土類金属イオン、またはアンモニウムイオンであり、各a3は、独立して、0〜3であり、各a4は、独立して、0〜3であり、b1=1〜4であり、b2=0〜4であり、各c3は、独立して、0〜3であり、各c4は、独立して、0〜3であり、a3+a4=1〜6、及びb1+b2=2〜6である、ポリアリーレン樹脂。 - 前記第1のモノマーが下式を有し、
式中、Ar1は、C5−30アリール部分であり、a1=0〜3であり、c1=0〜3である、請求項1記載のポリアリーレン樹脂。 - a3+a4=2〜4である、請求項1記載のポリアリーレン樹脂。
- b1+b2=2〜4である、請求項1記載のポリアリーレン樹脂。
- 式(13)の1つ以上の第3のモノマーを重合単位としてさらに含み、
式中、Ar7は、C5−30−芳香族部分であり、各Y2は、独立して、化学結合、または−O−、−S−、−S(=O)−、−S(=O)2−、−C(=O)−、−(C(R9)2)z−、C6−30アリール、及び−(C(R9)2)z1−(C6−30アリール)−(C(R9)2)z2から選択される二価連結基であり、各Rは、独立して、H、またはC5−30−アリール部分から選択され、各R15は、独立して、C1−4−アルキル、C1−4−ハロアルキル、C1−4−アルコキシ、任意で置換したC7−14−アラルキル、及び任意で置換したC6−30−アリールから選択され、b4=1または2であり、f=0〜4であり、zは、1〜10であり、z1は、0〜10であり、z2は、0〜10であり、z1+z2=1〜10である、請求項1記載のポリアリーレン樹脂。 - f=0である、請求項6記載のポリアリーレン樹脂。
- 前記1つ以上の第2のモノマーが、式(9)の1つ以上のモノマーから選択され、
式中、R10は、独立して、H、C1−6−アルキル、または任意で置換したC5−30−アリールから選択され、及びAr5は、5〜60個の炭素原子を有する芳香族部分である、請求項1記載のポリアリーレン樹脂。 - 請求項1記載のポリアリーレン樹脂と、1つ以上の有機溶媒と、を含む組成物。
- パターン層を形成する方法であって、(a)基板上に請求項8記載の組成物の層をコーティングするステップと、(b)有機溶媒を除去してポリアリーレン樹脂層を形成するステップと、(c)フォトレジストの層を前記ポリアリーレン樹脂層上にコーティングするステップと、(d)前記フォトレジスト層を、マスクを介して、化学線に対して露出するステップと、(e)前記露出したフォトレジスト層を現像してレジストパターンを形成するステップと、(f)前記パターンを前記ポリアリーレン樹脂層に転写して、前記基板の一部を露出するステップと、を含む、方法。
- 前記基板にパターン形成するステップと、次いで、前記パターン形成したポリアリーレン樹脂層を除去するステップと、をさらに含む、請求項9記載の方法。
- ステップ(c)の前に、シリコン含有層で、前記ポリアリーレン樹脂層の表面をコーティングするステップをさらに含む、請求項9記載の方法。
- ステップ(c)の後及びステップ(d)の前に、前記パターンを、前記シリコン含有層に転写するステップをさらに含む、請求項11記載の方法。
Applications Claiming Priority (2)
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US201662429928P | 2016-12-05 | 2016-12-05 | |
US62/429,928 | 2016-12-05 |
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JP2018090787A JP2018090787A (ja) | 2018-06-14 |
JP6525391B2 true JP6525391B2 (ja) | 2019-06-05 |
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US (1) | US11175581B2 (ja) |
JP (1) | JP6525391B2 (ja) |
KR (1) | KR102009169B1 (ja) |
CN (1) | CN108148180B (ja) |
TW (1) | TWI666229B (ja) |
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US10790146B2 (en) * | 2016-12-05 | 2020-09-29 | Rohm And Haas Electronic Materials Llc | Aromatic resins for underlayers |
US10867804B2 (en) * | 2018-06-29 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning method for semiconductor device and structures resulting therefrom |
US20200142309A1 (en) * | 2018-11-02 | 2020-05-07 | Rohm And Haas Electronic Materials Llc | Aromatic underlayer |
KR102156273B1 (ko) * | 2019-05-03 | 2020-09-15 | (주)코이즈 | 유기 하드마스크용 중합체 및 이를 포함하는 유기 하드마스크용 조성물 |
US11940732B2 (en) * | 2020-05-02 | 2024-03-26 | Rohm And Haas Electronic Materials Llc | Coating compositions and methods of forming electronic devices |
JP2021176013A (ja) * | 2020-05-02 | 2021-11-04 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 芳香族下層 |
US11817316B2 (en) * | 2020-05-02 | 2023-11-14 | Rohm And Haas Electronic Materials Llc | Coating compositions and methods of forming electronic devices |
JP7368322B2 (ja) * | 2020-06-12 | 2023-10-24 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
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US5965679A (en) | 1996-09-10 | 1999-10-12 | The Dow Chemical Company | Polyphenylene oligomers and polymers |
US6124421A (en) | 1997-12-12 | 2000-09-26 | Alliedsignal Inc. | Poly(arylene ether) compositions and methods of manufacture thereof |
EP1141128B1 (en) | 1998-11-24 | 2006-04-12 | Dow Global Technologies Inc. | A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom |
EP1157059A1 (en) * | 1999-01-08 | 2001-11-28 | The Dow Chemical Company | Low dielectric constant polymers having good adhesion and toughness and articles made with such polymers |
JP2001019724A (ja) * | 1999-07-06 | 2001-01-23 | Jsr Corp | 膜形成用組成物、電子材料、膜の形成方法及び膜 |
KR100795714B1 (ko) * | 2000-08-21 | 2008-01-21 | 다우 글로벌 테크놀로지스 인크. | 마이크로일렉트로닉 장치의 제조에 있어서 유기 중합체유전체용 하드마스크로서의 유기 규산염 수지 |
US7030031B2 (en) * | 2003-06-24 | 2006-04-18 | International Business Machines Corporation | Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier material |
EP1762895B1 (en) * | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
JP4865663B2 (ja) | 2007-09-28 | 2012-02-01 | 富士フイルム株式会社 | 絶縁膜形成用組成物 |
JP4880652B2 (ja) | 2007-10-12 | 2012-02-22 | 信越化学工業株式会社 | パターン形成方法 |
US9145468B2 (en) | 2013-08-02 | 2015-09-29 | Honda Motor Co., Ltd. | Photoelectric conversion material, method for producing the same, and organic photovoltaic cell containing the same |
JP6059617B2 (ja) * | 2013-08-02 | 2017-01-11 | 本田技研工業株式会社 | 光電変換材料の製造方法 |
KR102313101B1 (ko) * | 2013-12-12 | 2021-10-15 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 하부층용 방향족 수지 |
US9601325B2 (en) | 2014-06-24 | 2017-03-21 | Rohm And Haas Electronic Materials Llc | Aromatic resins for underlayers |
US10790146B2 (en) | 2016-12-05 | 2020-09-29 | Rohm And Haas Electronic Materials Llc | Aromatic resins for underlayers |
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2017
- 2017-11-02 US US15/802,094 patent/US11175581B2/en active Active
- 2017-11-10 TW TW106139055A patent/TWI666229B/zh active
- 2017-11-21 KR KR1020170155351A patent/KR102009169B1/ko active IP Right Grant
- 2017-11-21 CN CN201711162633.2A patent/CN108148180B/zh active Active
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TW201821472A (zh) | 2018-06-16 |
US11175581B2 (en) | 2021-11-16 |
JP2018090787A (ja) | 2018-06-14 |
KR20180064287A (ko) | 2018-06-14 |
CN108148180A (zh) | 2018-06-12 |
CN108148180B (zh) | 2020-09-11 |
KR102009169B1 (ko) | 2019-08-09 |
TWI666229B (zh) | 2019-07-21 |
US20180157175A1 (en) | 2018-06-07 |
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