JP2017001136A - 研削砥石 - Google Patents
研削砥石 Download PDFInfo
- Publication number
- JP2017001136A JP2017001136A JP2015117821A JP2015117821A JP2017001136A JP 2017001136 A JP2017001136 A JP 2017001136A JP 2015117821 A JP2015117821 A JP 2015117821A JP 2015117821 A JP2015117821 A JP 2015117821A JP 2017001136 A JP2017001136 A JP 2017001136A
- Authority
- JP
- Japan
- Prior art keywords
- grinding
- grinding wheel
- wafer
- average particle
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000227 grinding Methods 0.000 title claims abstract description 160
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 30
- 239000010432 diamond Substances 0.000 claims abstract description 30
- 239000006061 abrasive grain Substances 0.000 claims abstract description 29
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims description 45
- 238000003754 machining Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 54
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10254—Diamond [C]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
【解決手段】ダイヤモンド砥粒と、ホウ素化合物を含み、被加工物を研削する研削砥石37,47であって、ダイヤモン砥粒の平均粒径Xは、3μm≦X≦10μmであり、ホウ素化合物のダイヤモンド砥粒に対する平均粒径比Zが0.8≦Z≦3.0である。この研削砥石37,47において、被加工物は、SiCウエーハであり、平均粒径比Zが1.2≦Z≦2.0であることが好ましい。
【選択図】図1
Description
図1は、実施形態に係る研削砥石が装着された研削装置の構成例を示す図である。なお、同図におけるX軸方向は、研削装置10の幅方向であり、Y軸方向は研削装置10の奥行き方向であり、Z軸方向は鉛直方向である。
11 第一のカセット
12 第二のカセット
13 搬出入手段
15,16 搬送手段
17〜19 チャックテーブル
20 ターンテーブル
30,40 研削手段
37 粗研削用の研削砥石
47 仕上げ研削用の研削砥石
W ウエーハ(被加工物)
Claims (2)
- ダイヤモンド砥粒とホウ素化合物とを含む研削砥石であって、
該ダイヤモンド砥粒の平均粒径Xは、3μm≦X≦10μmであり、
該ホウ素化合物の前記ダイヤモンド砥粒に対する平均粒径比Zは、0.8≦Z≦3.0である、
ことを特徴とする研削砥石。 - 請求項1記載の研削砥石において、被加工物はSiCウエーハであり、
前記平均粒径比Zは、1.2≦Z≦2.0である、
ことを特徴とする研削砥石。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015117821A JP6564624B2 (ja) | 2015-06-10 | 2015-06-10 | 研削砥石 |
TW105113739A TWI707027B (zh) | 2015-06-10 | 2016-05-03 | 磨削磨石 |
DE102016210001.7A DE102016210001A1 (de) | 2015-06-10 | 2016-06-07 | Schleifstein |
CN201610403056.0A CN106239389A (zh) | 2015-06-10 | 2016-06-08 | 磨削磨具 |
KR1020160071503A KR102549249B1 (ko) | 2015-06-10 | 2016-06-09 | 연삭 지석 |
US15/178,104 US20160361793A1 (en) | 2015-06-10 | 2016-06-09 | Abrasive grindstone |
FR1655344A FR3037268B1 (fr) | 2015-06-10 | 2016-06-10 | Meule abrasive |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015117821A JP6564624B2 (ja) | 2015-06-10 | 2015-06-10 | 研削砥石 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017001136A true JP2017001136A (ja) | 2017-01-05 |
JP6564624B2 JP6564624B2 (ja) | 2019-08-21 |
Family
ID=57395693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015117821A Active JP6564624B2 (ja) | 2015-06-10 | 2015-06-10 | 研削砥石 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160361793A1 (ja) |
JP (1) | JP6564624B2 (ja) |
KR (1) | KR102549249B1 (ja) |
CN (1) | CN106239389A (ja) |
DE (1) | DE102016210001A1 (ja) |
FR (1) | FR3037268B1 (ja) |
TW (1) | TWI707027B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021503170A (ja) * | 2018-10-16 | 2021-02-04 | 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 | 高平坦性、低ダメージの大きな直径の単結晶炭化ケイ素基板及びその製造方法 |
US12017328B2 (en) | 2022-09-28 | 2024-06-25 | Tokyo Diamond Tools Mfg. Co., Ltd. | Synthetic grindstone, synthetic grindstone assembly, and method of manufacturing synthetic grindstone |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7216613B2 (ja) * | 2019-05-16 | 2023-02-01 | 株式会社ディスコ | 加工装置 |
CN111300288B (zh) * | 2020-04-21 | 2021-11-09 | 郑州磨料磨具磨削研究所有限公司 | 一种电子封装基板材料磨削用砂轮及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10296637A (ja) * | 1997-04-30 | 1998-11-10 | Osaka Diamond Ind Co Ltd | 超砥粒砥石 |
JP2000343438A (ja) * | 1999-06-01 | 2000-12-12 | Noritake Co Ltd | ビトリファイド砥石 |
JP2001009732A (ja) * | 1999-06-24 | 2001-01-16 | Noritake Co Ltd | ビトリファイドボンド砥石及びその製造方法 |
JP2004009195A (ja) * | 2002-06-05 | 2004-01-15 | Minebea Co Ltd | 超仕上用砥石 |
JP2012056013A (ja) * | 2010-09-08 | 2012-03-22 | Disco Corp | 研削ホイール |
JP2012200847A (ja) * | 2011-03-28 | 2012-10-22 | Noritake Co Ltd | ビトリファイド超砥粒砥石 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4923490A (en) * | 1988-12-16 | 1990-05-08 | General Electric Company | Novel grinding wheels utilizing polycrystalline diamond or cubic boron nitride grit |
CN1112141A (zh) * | 1994-05-19 | 1995-11-22 | 戴延平 | 一种金刚石树脂砂轮的制造方法 |
US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
US7097549B2 (en) * | 2001-12-20 | 2006-08-29 | Ppg Industries Ohio, Inc. | Polishing pad |
US20050210755A1 (en) * | 2003-09-05 | 2005-09-29 | Cho Hyun S | Doubled-sided and multi-layered PCBN and PCD abrasive articles |
CN100376715C (zh) * | 2004-12-08 | 2008-03-26 | 上海江信超硬材料有限公司 | 一种金刚石表面涂覆玻璃涂覆立方氮化硼镀钛复合结构及制造方法 |
US7494404B2 (en) * | 2006-02-17 | 2009-02-24 | Chien-Min Sung | Tools for polishing and associated methods |
US8398462B2 (en) * | 2008-02-21 | 2013-03-19 | Chien-Min Sung | CMP pads and method of creating voids in-situ therein |
CN101434827B (zh) * | 2008-12-17 | 2012-06-13 | 厦门致力金刚石科技股份有限公司 | 一种含陶瓷颗粒的磨料及其制备方法和应用 |
JP2012056012A (ja) * | 2010-09-08 | 2012-03-22 | Disco Corp | 切削砥石 |
CA2813086C (en) * | 2010-10-06 | 2017-05-30 | Saint-Gobain Abrasives, Inc. | Nonwoven composite abrasive comprising diamond abrasive particles |
JP2012086291A (ja) * | 2010-10-18 | 2012-05-10 | Disco Corp | 切削砥石 |
JP5636144B2 (ja) * | 2012-01-18 | 2014-12-03 | 株式会社ノリタケカンパニーリミテド | ビトリファイド超砥粒砥石 |
JP5373171B1 (ja) * | 2012-10-20 | 2013-12-18 | 株式会社ナノテム | 砥石およびそれを用いた研削・研磨装置 |
US9815170B2 (en) * | 2013-07-19 | 2017-11-14 | Nagoya Institute Of Technology | Metallic abrasive pad and method for manufacturing same |
CN103922747B (zh) * | 2014-04-30 | 2015-10-21 | 郑州磨料磨具磨削研究所有限公司 | 陶瓷结合剂超硬材料磨具注射成型料及注射成型方法 |
JP2016147359A (ja) * | 2015-02-13 | 2016-08-18 | 株式会社ディスコ | 研削砥石 |
-
2015
- 2015-06-10 JP JP2015117821A patent/JP6564624B2/ja active Active
-
2016
- 2016-05-03 TW TW105113739A patent/TWI707027B/zh active
- 2016-06-07 DE DE102016210001.7A patent/DE102016210001A1/de active Pending
- 2016-06-08 CN CN201610403056.0A patent/CN106239389A/zh active Pending
- 2016-06-09 US US15/178,104 patent/US20160361793A1/en not_active Abandoned
- 2016-06-09 KR KR1020160071503A patent/KR102549249B1/ko active IP Right Grant
- 2016-06-10 FR FR1655344A patent/FR3037268B1/fr active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10296637A (ja) * | 1997-04-30 | 1998-11-10 | Osaka Diamond Ind Co Ltd | 超砥粒砥石 |
JP2000343438A (ja) * | 1999-06-01 | 2000-12-12 | Noritake Co Ltd | ビトリファイド砥石 |
JP2001009732A (ja) * | 1999-06-24 | 2001-01-16 | Noritake Co Ltd | ビトリファイドボンド砥石及びその製造方法 |
JP2004009195A (ja) * | 2002-06-05 | 2004-01-15 | Minebea Co Ltd | 超仕上用砥石 |
JP2012056013A (ja) * | 2010-09-08 | 2012-03-22 | Disco Corp | 研削ホイール |
JP2012200847A (ja) * | 2011-03-28 | 2012-10-22 | Noritake Co Ltd | ビトリファイド超砥粒砥石 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021503170A (ja) * | 2018-10-16 | 2021-02-04 | 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 | 高平坦性、低ダメージの大きな直径の単結晶炭化ケイ素基板及びその製造方法 |
US12017328B2 (en) | 2022-09-28 | 2024-06-25 | Tokyo Diamond Tools Mfg. Co., Ltd. | Synthetic grindstone, synthetic grindstone assembly, and method of manufacturing synthetic grindstone |
Also Published As
Publication number | Publication date |
---|---|
JP6564624B2 (ja) | 2019-08-21 |
FR3037268A1 (fr) | 2016-12-16 |
TW201700709A (zh) | 2017-01-01 |
FR3037268B1 (fr) | 2019-09-06 |
TWI707027B (zh) | 2020-10-11 |
US20160361793A1 (en) | 2016-12-15 |
KR102549249B1 (ko) | 2023-06-28 |
DE102016210001A1 (de) | 2016-12-15 |
CN106239389A (zh) | 2016-12-21 |
KR20160145500A (ko) | 2016-12-20 |
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