JP2016182669A - 板状物の加工装置 - Google Patents
板状物の加工装置 Download PDFInfo
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- JP2016182669A JP2016182669A JP2016135040A JP2016135040A JP2016182669A JP 2016182669 A JP2016182669 A JP 2016182669A JP 2016135040 A JP2016135040 A JP 2016135040A JP 2016135040 A JP2016135040 A JP 2016135040A JP 2016182669 A JP2016182669 A JP 2016182669A
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- wafer
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- 238000012545 processing Methods 0.000 title claims abstract description 25
- 238000005498 polishing Methods 0.000 claims abstract description 91
- 239000007788 liquid Substances 0.000 claims abstract description 58
- 230000002378 acidificating effect Effects 0.000 claims abstract description 5
- 239000006061 abrasive grain Substances 0.000 claims description 14
- 230000000694 effects Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 98
- 238000005247 gettering Methods 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 24
- 238000004140 cleaning Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000003754 machining Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000003672 processing method Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
【解決手段】 板状物を保持するチャックテテーブルと、該チャックテーブルに保持された板状物を研磨する、砥粒を含有した研磨パッドを有する研磨手段と、アルカリ性または酸性の研磨液供給源と、リンス液供給源とに選択的に接続され、該チャックテーブルに保持された板状物と該研磨パッドとに加工液を供給する加工液供給ノズルと、を備えた加工装置。
【選択図】図6
Description
12 粗研削ユニット
15 デバイス
16 仕上げ研削ユニット
23 表面保護テープ
48 ターンテーブル
50 チャックテーブル
52 研磨ユニット
74 研磨パッド
78 加工液供給ノズル
80 電磁切替弁
82 研磨液供給源
84 リンス液供給源
Claims (1)
- 板状物を保持するチャックテテーブルと、
該チャックテーブルに保持された板状物を研磨する、砥粒を含有した研磨パッドを有する研磨手段と、
アルカリ性または酸性の研磨液供給源と、リンス液供給源とに選択的に接続され、該チャックテーブルに保持された板状物と該研磨パッドとに加工液を供給する加工液供給ノズルと、
を備えた加工装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016135040A JP6192778B2 (ja) | 2016-07-07 | 2016-07-07 | シリコンウエーハの加工装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016135040A JP6192778B2 (ja) | 2016-07-07 | 2016-07-07 | シリコンウエーハの加工装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012117519A Division JP5963537B2 (ja) | 2012-05-23 | 2012-05-23 | シリコンウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016182669A true JP2016182669A (ja) | 2016-10-20 |
JP6192778B2 JP6192778B2 (ja) | 2017-09-06 |
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JP2016135040A Active JP6192778B2 (ja) | 2016-07-07 | 2016-07-07 | シリコンウエーハの加工装置 |
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JP (1) | JP6192778B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180123434A (ko) | 2017-05-08 | 2018-11-16 | 가부시기가이샤 디스코 | 게터링층 형성 방법 |
KR20180123435A (ko) | 2017-05-08 | 2018-11-16 | 가부시기가이샤 디스코 | 게터링층 형성 방법 |
CN109719616A (zh) * | 2017-10-30 | 2019-05-07 | 台湾积体电路制造股份有限公司 | 平坦化机台及其平坦化方法 |
US20190311910A1 (en) * | 2018-04-05 | 2019-10-10 | Disco Corporation | METHOD OF POLISHING SiC SUBSTRATE |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7175698B2 (ja) | 2018-10-03 | 2022-11-21 | 株式会社ディスコ | ウェーハの加工方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000354953A (ja) * | 1999-05-03 | 2000-12-26 | Applied Materials Inc | ケミカルメカニカル平坦化方法 |
JP2002144222A (ja) * | 2000-11-10 | 2002-05-21 | Mitsubishi Materials Corp | 研磨ヘッド |
JP2004335668A (ja) * | 2003-05-06 | 2004-11-25 | Disco Abrasive Syst Ltd | 研磨装置 |
JP2006344878A (ja) * | 2005-06-10 | 2006-12-21 | Disco Abrasive Syst Ltd | 加工装置および加工方法 |
JP2011167818A (ja) * | 2010-02-19 | 2011-09-01 | Disco Corp | 加工装置 |
-
2016
- 2016-07-07 JP JP2016135040A patent/JP6192778B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000354953A (ja) * | 1999-05-03 | 2000-12-26 | Applied Materials Inc | ケミカルメカニカル平坦化方法 |
JP2002144222A (ja) * | 2000-11-10 | 2002-05-21 | Mitsubishi Materials Corp | 研磨ヘッド |
JP2004335668A (ja) * | 2003-05-06 | 2004-11-25 | Disco Abrasive Syst Ltd | 研磨装置 |
JP2006344878A (ja) * | 2005-06-10 | 2006-12-21 | Disco Abrasive Syst Ltd | 加工装置および加工方法 |
JP2011167818A (ja) * | 2010-02-19 | 2011-09-01 | Disco Corp | 加工装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180123434A (ko) | 2017-05-08 | 2018-11-16 | 가부시기가이샤 디스코 | 게터링층 형성 방법 |
KR20180123435A (ko) | 2017-05-08 | 2018-11-16 | 가부시기가이샤 디스코 | 게터링층 형성 방법 |
US10541149B2 (en) | 2017-05-08 | 2020-01-21 | Disco Corporation | Gettering layer forming method |
US10546758B2 (en) | 2017-05-08 | 2020-01-28 | Disco Corporation | Gettering layer forming method |
CN109719616A (zh) * | 2017-10-30 | 2019-05-07 | 台湾积体电路制造股份有限公司 | 平坦化机台及其平坦化方法 |
US10879077B2 (en) | 2017-10-30 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Planarization apparatus and planarization method thereof |
CN109719616B (zh) * | 2017-10-30 | 2023-10-13 | 台湾积体电路制造股份有限公司 | 平坦化机台及其平坦化方法 |
US20190311910A1 (en) * | 2018-04-05 | 2019-10-10 | Disco Corporation | METHOD OF POLISHING SiC SUBSTRATE |
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