JP2016530706A5 - - Google Patents

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JP2016530706A5
JP2016530706A5 JP2016523737A JP2016523737A JP2016530706A5 JP 2016530706 A5 JP2016530706 A5 JP 2016530706A5 JP 2016523737 A JP2016523737 A JP 2016523737A JP 2016523737 A JP2016523737 A JP 2016523737A JP 2016530706 A5 JP2016530706 A5 JP 2016530706A5
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substrate
inches
image
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vertical
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JP2016523737A
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JP2016530706A (ja
JP6853038B2 (ja
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Priority claimed from PCT/US2014/036213 external-priority patent/WO2014209492A1/en
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JP2016523737A 2013-06-26 2014-04-30 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 Active JP6853038B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26
US61/839,823 2013-06-26
PCT/US2014/036213 WO2014209492A1 (en) 2013-06-26 2014-04-30 Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber

Related Child Applications (1)

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JP2020213400A Division JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

Publications (3)

Publication Number Publication Date
JP2016530706A JP2016530706A (ja) 2016-09-29
JP2016530706A5 true JP2016530706A5 (https=) 2017-06-08
JP6853038B2 JP6853038B2 (ja) 2021-03-31

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JP2016523737A Active JP6853038B2 (ja) 2013-06-26 2014-04-30 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
JP2020213400A Pending JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

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JP2020213400A Pending JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

Country Status (6)

Country Link
US (1) US20160099162A1 (https=)
JP (2) JP6853038B2 (https=)
KR (1) KR102253990B1 (https=)
CN (2) CN111180305A (https=)
TW (1) TWM492915U (https=)
WO (1) WO2014209492A1 (https=)

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US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US9633862B2 (en) * 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP2020516770A (ja) * 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
KR102258054B1 (ko) * 2017-07-24 2021-05-28 램 리써치 코포레이션 이동가능한 에지 링 설계들
CN111065965B (zh) * 2017-09-13 2023-11-03 株式会社Lg化学 图案化基底的制备方法
CN118380372A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
TWI848010B (zh) * 2018-10-18 2024-07-11 美商蘭姆研究公司 用於斜面蝕刻器的下電漿排除區域環
KR102864012B1 (ko) * 2018-12-03 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 척킹 및 아크 발생 성능이 개선된 정전 척 설계
JP7612618B2 (ja) * 2019-06-18 2025-01-14 ラム リサーチ コーポレーション 基板処理システム用の縮径キャリアリングハードウェア
CN118431063A (zh) * 2019-08-05 2024-08-02 朗姆研究公司 用于衬底处理系统的边缘环系统
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
CN217387074U (zh) 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环

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KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
TWI272877B (en) * 2001-12-13 2007-02-01 Tokyo Electron Ltd Ring mechanism, and plasma processing device using the ring mechanism
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
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