CN111180305A - 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 - Google Patents

在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 Download PDF

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Publication number
CN111180305A
CN111180305A CN202010081458.XA CN202010081458A CN111180305A CN 111180305 A CN111180305 A CN 111180305A CN 202010081458 A CN202010081458 A CN 202010081458A CN 111180305 A CN111180305 A CN 111180305A
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CN
China
Prior art keywords
substrate
lip
inches
diameter
single ring
Prior art date
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Pending
Application number
CN202010081458.XA
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English (en)
Chinese (zh)
Inventor
S·T·吴
C·李
H·达奥
A·莱恩
M·D·威尔沃斯
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN111180305A publication Critical patent/CN111180305A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202010081458.XA 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 Pending CN111180305A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26
US61/839,823 2013-06-26
CN201480018535.XA CN105074869A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480018535.XA Division CN105074869A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Publications (1)

Publication Number Publication Date
CN111180305A true CN111180305A (zh) 2020-05-19

Family

ID=52142541

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202010081458.XA Pending CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计
CN201480018535.XA Pending CN105074869A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201480018535.XA Pending CN105074869A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Country Status (6)

Country Link
US (1) US20160099162A1 (https=)
JP (2) JP6853038B2 (https=)
KR (1) KR102253990B1 (https=)
CN (2) CN111180305A (https=)
TW (1) TWM492915U (https=)
WO (1) WO2014209492A1 (https=)

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US9633862B2 (en) * 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP2020516770A (ja) * 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
KR102258054B1 (ko) * 2017-07-24 2021-05-28 램 리써치 코포레이션 이동가능한 에지 링 설계들
CN111065965B (zh) * 2017-09-13 2023-11-03 株式会社Lg化学 图案化基底的制备方法
CN118380372A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
TWI848010B (zh) * 2018-10-18 2024-07-11 美商蘭姆研究公司 用於斜面蝕刻器的下電漿排除區域環
KR102864012B1 (ko) * 2018-12-03 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 척킹 및 아크 발생 성능이 개선된 정전 척 설계
JP7612618B2 (ja) * 2019-06-18 2025-01-14 ラム リサーチ コーポレーション 基板処理システム用の縮径キャリアリングハードウェア
CN118431063A (zh) * 2019-08-05 2024-08-02 朗姆研究公司 用于衬底处理系统的边缘环系统
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
CN217387074U (zh) 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环

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US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
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US20130154175A1 (en) * 2011-12-15 2013-06-20 Applied Materials, Inc. Process kit components for use with an extended and independent rf powered cathode substrate for extreme edge tunability

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JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
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US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
US20040173319A1 (en) * 2003-03-03 2004-09-09 Kawasaki Microelectronics, Inc. Quartz component for plasma processing apparatus and restoring method thereof
CN1867694A (zh) * 2003-10-10 2006-11-22 应用材料公司 衬底加热器组件
CN101076877A (zh) * 2004-12-15 2007-11-21 株式会社尼康 衬底保持装置、曝光装置以及器件制造方法
US20090255901A1 (en) * 2005-10-12 2009-10-15 Shogo Okita Plasma processing apparatus, plasma processing method, and tray
CN102150478A (zh) * 2008-09-10 2011-08-10 应用材料股份有限公司 用于等离子处理腔室的低倾斜度边缘环
CN202205699U (zh) * 2009-12-01 2012-04-25 朗姆研究公司 一种用于等离子体蚀刻室的边环装置部件
US20130154175A1 (en) * 2011-12-15 2013-06-20 Applied Materials, Inc. Process kit components for use with an extended and independent rf powered cathode substrate for extreme edge tunability

Also Published As

Publication number Publication date
WO2014209492A1 (en) 2014-12-31
KR102253990B1 (ko) 2021-05-18
US20160099162A1 (en) 2016-04-07
TWM492915U (zh) 2015-01-01
KR20160023646A (ko) 2016-03-03
CN105074869A (zh) 2015-11-18
JP2021068909A (ja) 2021-04-30
JP2016530706A (ja) 2016-09-29
JP6853038B2 (ja) 2021-03-31

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