JP2016529733A - 基板支持システム - Google Patents

基板支持システム Download PDF

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Publication number
JP2016529733A
JP2016529733A JP2016538940A JP2016538940A JP2016529733A JP 2016529733 A JP2016529733 A JP 2016529733A JP 2016538940 A JP2016538940 A JP 2016538940A JP 2016538940 A JP2016538940 A JP 2016538940A JP 2016529733 A JP2016529733 A JP 2016529733A
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JP
Japan
Prior art keywords
substrate
pedestal
processing chamber
end support
support member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016538940A
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English (en)
Japanese (ja)
Other versions
JP2016529733A5 (https=
Inventor
ドミトリー ルボミルスキー,
ドミトリー ルボミルスキー,
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016529733A publication Critical patent/JP2016529733A/ja
Publication of JP2016529733A5 publication Critical patent/JP2016529733A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
JP2016538940A 2013-08-30 2014-08-07 基板支持システム Pending JP2016529733A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361872545P 2013-08-30 2013-08-30
US61/872,545 2013-08-30
PCT/US2014/050227 WO2015031023A1 (en) 2013-08-30 2014-08-07 Substrate support system

Publications (2)

Publication Number Publication Date
JP2016529733A true JP2016529733A (ja) 2016-09-23
JP2016529733A5 JP2016529733A5 (https=) 2017-09-14

Family

ID=52583785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016538940A Pending JP2016529733A (ja) 2013-08-30 2014-08-07 基板支持システム

Country Status (6)

Country Link
US (1) US20150064809A1 (https=)
JP (1) JP2016529733A (https=)
KR (1) KR20160047540A (https=)
CN (1) CN105493262B (https=)
TW (1) TWI673821B (https=)
WO (1) WO2015031023A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024514383A (ja) * 2021-04-02 2024-04-02 アプライド マテリアルズ インコーポレイテッド 電界誘導される露光後ベークプロセス用のプロセスセル

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017116708A1 (en) * 2015-12-30 2017-07-06 Mattson Technology, Inc. Features for improving process uniformity in a millisecond anneal system
CN108369922B (zh) 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
JP6888007B2 (ja) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated ウェハエッジリングの持ち上げに関する解決
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10571069B2 (en) * 2017-09-14 2020-02-25 Applied Materials, Inc. Gimbal assembly for heater pedestal
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
JP6971865B2 (ja) 2018-01-17 2021-11-24 キオクシア株式会社 処理装置
JP6770988B2 (ja) * 2018-03-14 2020-10-21 株式会社Kokusai Electric 基板処理装置および半導体装置の製造方法
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
WO2020214327A1 (en) 2019-04-19 2020-10-22 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
CN112542370B (zh) * 2019-09-23 2024-04-05 中微半导体设备(上海)股份有限公司 一种等离子体处理器及其加热器组件
US11204312B2 (en) * 2020-03-13 2021-12-21 Applied Materials, Inc. In-situ full wafer metrology system
US12100579B2 (en) * 2020-11-18 2024-09-24 Applied Materials, Inc. Deposition ring for thin substrate handling via edge clamping

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286328A (ja) * 1999-03-31 2000-10-13 Tokyo Electron Ltd ガス処理装置
JP2002050809A (ja) * 2000-08-01 2002-02-15 Anelva Corp 基板処理装置及び方法
JP2002174502A (ja) * 2000-12-07 2002-06-21 Ulvac Japan Ltd 軸出し装置、膜厚測定装置、成膜装置、軸出し方法及び膜厚測定方法
JP2003115527A (ja) * 2001-10-05 2003-04-18 Sumitomo Heavy Ind Ltd 基板移動装置
JP2009135228A (ja) * 2007-11-29 2009-06-18 Nuflare Technology Inc 気相成長装置および気相成長方法
JP2011181873A (ja) * 2010-03-04 2011-09-15 Nissin Ion Equipment Co Ltd ウエハリフト回転機構、ステージ装置及びイオン注入装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982986A (en) * 1995-02-03 1999-11-09 Applied Materials, Inc. Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
US6217663B1 (en) * 1996-06-21 2001-04-17 Kokusai Electric Co., Ltd. Substrate processing apparatus and substrate processing method
US6068441A (en) * 1997-11-21 2000-05-30 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US7128806B2 (en) * 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
US7198677B2 (en) * 2005-03-09 2007-04-03 Wafermasters, Inc. Low temperature wafer backside cleaning
ITTO20060131A1 (it) * 2006-02-24 2007-08-25 Fiat Auto Spa Dispositivo di controllo della movimentazione di una valvola in particolare di una valvola di aspirazione di un motore a combustione interna
JP2007242858A (ja) * 2006-03-08 2007-09-20 Wafermasters Inc ウエハ処理システム及び処理方法
JP4949091B2 (ja) * 2007-03-16 2012-06-06 東京エレクトロン株式会社 基板処理装置、基板処理方法および記録媒体
US20100248397A1 (en) * 2009-03-26 2010-09-30 Tokyo Electron Limited High temperature susceptor having improved processing uniformity
JP5341706B2 (ja) * 2009-10-16 2013-11-13 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5527166B2 (ja) * 2010-11-05 2014-06-18 住友電気工業株式会社 加熱装置および気相成長装置
WO2012134663A2 (en) * 2011-03-16 2012-10-04 Applied Materials, Inc Method and apparatus utilizing a single lift mechanism for processing and transfer of substrates
WO2013162972A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Process chamber having separate process gas and purge gas regions
WO2015138094A1 (en) * 2014-03-12 2015-09-17 Applied Materials, Inc. Wafer rotation in a semiconductor chamber

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286328A (ja) * 1999-03-31 2000-10-13 Tokyo Electron Ltd ガス処理装置
JP2002050809A (ja) * 2000-08-01 2002-02-15 Anelva Corp 基板処理装置及び方法
JP2002174502A (ja) * 2000-12-07 2002-06-21 Ulvac Japan Ltd 軸出し装置、膜厚測定装置、成膜装置、軸出し方法及び膜厚測定方法
JP2003115527A (ja) * 2001-10-05 2003-04-18 Sumitomo Heavy Ind Ltd 基板移動装置
JP2009135228A (ja) * 2007-11-29 2009-06-18 Nuflare Technology Inc 気相成長装置および気相成長方法
JP2011181873A (ja) * 2010-03-04 2011-09-15 Nissin Ion Equipment Co Ltd ウエハリフト回転機構、ステージ装置及びイオン注入装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024514383A (ja) * 2021-04-02 2024-04-02 アプライド マテリアルズ インコーポレイテッド 電界誘導される露光後ベークプロセス用のプロセスセル
JP7630004B2 (ja) 2021-04-02 2025-02-14 アプライド マテリアルズ インコーポレイテッド 電界誘導される露光後ベークプロセス用のプロセスセル

Also Published As

Publication number Publication date
WO2015031023A1 (en) 2015-03-05
TW201523785A (zh) 2015-06-16
KR20160047540A (ko) 2016-05-02
TWI673821B (zh) 2019-10-01
CN105493262B (zh) 2019-02-15
US20150064809A1 (en) 2015-03-05
CN105493262A (zh) 2016-04-13

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