JP2016528731A5 - - Google Patents

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Publication number
JP2016528731A5
JP2016528731A5 JP2016527144A JP2016527144A JP2016528731A5 JP 2016528731 A5 JP2016528731 A5 JP 2016528731A5 JP 2016527144 A JP2016527144 A JP 2016527144A JP 2016527144 A JP2016527144 A JP 2016527144A JP 2016528731 A5 JP2016528731 A5 JP 2016528731A5
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JP
Japan
Prior art keywords
layer
impatt diode
vertical
well
type
Prior art date
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Application number
JP2016527144A
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English (en)
Japanese (ja)
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JP6302548B2 (ja
JP2016528731A (ja
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Priority claimed from US14/327,157 external-priority patent/US9412879B2/en
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Publication of JP2016528731A publication Critical patent/JP2016528731A/ja
Publication of JP2016528731A5 publication Critical patent/JP2016528731A5/ja
Application granted granted Critical
Publication of JP6302548B2 publication Critical patent/JP6302548B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016527144A 2013-07-18 2014-07-18 アナログ技術におけるシリコンｉｍｐａｔｔダイオードのインテグレーション Active JP6302548B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361847742P 2013-07-18 2013-07-18
US61/847,742 2013-07-18
US14/327,157 US9412879B2 (en) 2013-07-18 2014-07-09 Integration of the silicon IMPATT diode in an analog technology
US14/327,157 2014-07-09
PCT/US2014/047298 WO2015010089A1 (en) 2013-07-18 2014-07-18 Integration of silicon impatt diode in analog technology

Publications (3)

Publication Number Publication Date
JP2016528731A JP2016528731A (ja) 2016-09-15
JP2016528731A5 true JP2016528731A5 (enExample) 2017-08-17
JP6302548B2 JP6302548B2 (ja) 2018-03-28

Family

ID=52342917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016527144A Active JP6302548B2 (ja) 2013-07-18 2014-07-18 アナログ技術におけるシリコンｉｍｐａｔｔダイオードのインテグレーション

Country Status (4)

Country Link
US (2) US9412879B2 (enExample)
JP (1) JP6302548B2 (enExample)
CN (1) CN105393340B (enExample)
WO (1) WO2015010089A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9525077B1 (en) * 2015-11-04 2016-12-20 Texas Instruments Incorporated Integration of a baritt diode
CN108875193B (zh) * 2018-06-12 2020-01-17 温州大学 评估SiC同质异构结IMPATT二极管性能的方法
CN109509808B (zh) * 2018-11-21 2020-01-14 温州大学 一种SiC/Si异质结侧向型光敏IMPATT二极管及其制备方法
CN109616552B (zh) * 2018-11-21 2020-04-14 温州大学 GaN/SiC异质结侧向型光控IMPATT二极管及其制备方法
CN120282540B (zh) * 2025-05-13 2026-02-03 深圳市晶扬电子有限公司 一种基于新型结构的低容值静电保护器件及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices
FR2160759B1 (enExample) 1971-11-26 1974-05-31 Thomson Csf
JPS5622147B2 (enExample) * 1972-06-28 1981-05-23
US4064620A (en) 1976-01-27 1977-12-27 Hughes Aircraft Company Ion implantation process for fabricating high frequency avalanche devices
US4030943A (en) 1976-05-21 1977-06-21 Hughes Aircraft Company Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits
US4230505A (en) 1979-10-09 1980-10-28 Rca Corporation Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
US4692791A (en) 1984-07-13 1987-09-08 Texas Instruments Incorporated Monolithic IMPATT with stripline leads
US4596070A (en) 1984-07-13 1986-06-24 Texas Instruments Incorporated Interdigitated IMPATT devices
US4859633A (en) 1985-01-31 1989-08-22 Texas Instruments Incorporated Process for fabricating monolithic microwave diodes
DE3725214A1 (de) 1986-09-27 1988-03-31 Licentia Gmbh Impatt-diode
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS
GB9823115D0 (en) * 1998-10-23 1998-12-16 Secr Defence Improvements in impatt diodes
US6660616B2 (en) * 2001-01-31 2003-12-09 Texas Instruments Incorporated P-i-n transit time silicon-on-insulator device
US8816443B2 (en) * 2001-10-12 2014-08-26 Quantum Semiconductor Llc Method of fabricating heterojunction photodiodes with CMOS
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
SG107645A1 (en) * 2002-09-10 2004-12-29 Sarnoff Corp Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies
JP2006173437A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 半導体装置

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