JP6302548B2 - アナログ技術におけるシリコンｉｍｐａｔｔダイオードのインテグレーション - Google Patents
アナログ技術におけるシリコンｉｍｐａｔｔダイオードのインテグレーション Download PDFInfo
- Publication number
- JP6302548B2 JP6302548B2 JP2016527144A JP2016527144A JP6302548B2 JP 6302548 B2 JP6302548 B2 JP 6302548B2 JP 2016527144 A JP2016527144 A JP 2016527144A JP 2016527144 A JP2016527144 A JP 2016527144A JP 6302548 B2 JP6302548 B2 JP 6302548B2
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- JP
- Japan
- Prior art keywords
- layer
- impatt diode
- breakdown
- type
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/128—Anode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/129—Cathode regions of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/055—Manufacture or treatment of transit-time diodes, e.g. IMPATT or TRAPATT diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
Landscapes
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361847742P | 2013-07-18 | 2013-07-18 | |
| US61/847,742 | 2013-07-18 | ||
| US14/327,157 US9412879B2 (en) | 2013-07-18 | 2014-07-09 | Integration of the silicon IMPATT diode in an analog technology |
| US14/327,157 | 2014-07-09 | ||
| PCT/US2014/047298 WO2015010089A1 (en) | 2013-07-18 | 2014-07-18 | Integration of silicon impatt diode in analog technology |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016528731A JP2016528731A (ja) | 2016-09-15 |
| JP2016528731A5 JP2016528731A5 (enExample) | 2017-08-17 |
| JP6302548B2 true JP6302548B2 (ja) | 2018-03-28 |
Family
ID=52342917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016527144A Active JP6302548B2 (ja) | 2013-07-18 | 2014-07-18 | アナログ技術におけるシリコンｉｍｐａｔｔダイオードのインテグレーション |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9412879B2 (enExample) |
| JP (1) | JP6302548B2 (enExample) |
| CN (1) | CN105393340B (enExample) |
| WO (1) | WO2015010089A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9525077B1 (en) * | 2015-11-04 | 2016-12-20 | Texas Instruments Incorporated | Integration of a baritt diode |
| CN108875193B (zh) * | 2018-06-12 | 2020-01-17 | 温州大学 | 评估SiC同质异构结IMPATT二极管性能的方法 |
| CN109509808B (zh) * | 2018-11-21 | 2020-01-14 | 温州大学 | 一种SiC/Si异质结侧向型光敏IMPATT二极管及其制备方法 |
| CN109616552B (zh) * | 2018-11-21 | 2020-04-14 | 温州大学 | GaN/SiC异质结侧向型光控IMPATT二极管及其制备方法 |
| CN120282540B (zh) * | 2025-05-13 | 2026-02-03 | 深圳市晶扬电子有限公司 | 一种基于新型结构的低容值静电保护器件及其制造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3649386A (en) * | 1968-04-23 | 1972-03-14 | Bell Telephone Labor Inc | Method of fabricating semiconductor devices |
| FR2160759B1 (enExample) | 1971-11-26 | 1974-05-31 | Thomson Csf | |
| JPS5622147B2 (enExample) * | 1972-06-28 | 1981-05-23 | ||
| US4064620A (en) | 1976-01-27 | 1977-12-27 | Hughes Aircraft Company | Ion implantation process for fabricating high frequency avalanche devices |
| US4030943A (en) | 1976-05-21 | 1977-06-21 | Hughes Aircraft Company | Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits |
| US4230505A (en) | 1979-10-09 | 1980-10-28 | Rca Corporation | Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal |
| US4692791A (en) | 1984-07-13 | 1987-09-08 | Texas Instruments Incorporated | Monolithic IMPATT with stripline leads |
| US4596070A (en) | 1984-07-13 | 1986-06-24 | Texas Instruments Incorporated | Interdigitated IMPATT devices |
| US4859633A (en) | 1985-01-31 | 1989-08-22 | Texas Instruments Incorporated | Process for fabricating monolithic microwave diodes |
| DE3725214A1 (de) | 1986-09-27 | 1988-03-31 | Licentia Gmbh | Impatt-diode |
| US5374569A (en) * | 1992-09-21 | 1994-12-20 | Siliconix Incorporated | Method for forming a BiCDMOS |
| GB9823115D0 (en) * | 1998-10-23 | 1998-12-16 | Secr Defence | Improvements in impatt diodes |
| US6660616B2 (en) * | 2001-01-31 | 2003-12-09 | Texas Instruments Incorporated | P-i-n transit time silicon-on-insulator device |
| US8816443B2 (en) * | 2001-10-12 | 2014-08-26 | Quantum Semiconductor Llc | Method of fabricating heterojunction photodiodes with CMOS |
| US7384854B2 (en) * | 2002-03-08 | 2008-06-10 | International Business Machines Corporation | Method of forming low capacitance ESD robust diodes |
| SG107645A1 (en) * | 2002-09-10 | 2004-12-29 | Sarnoff Corp | Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies |
| JP2006173437A (ja) * | 2004-12-17 | 2006-06-29 | Toshiba Corp | 半導体装置 |
-
2014
- 2014-07-09 US US14/327,157 patent/US9412879B2/en active Active
- 2014-07-18 CN CN201480040871.4A patent/CN105393340B/zh active Active
- 2014-07-18 WO PCT/US2014/047298 patent/WO2015010089A1/en not_active Ceased
- 2014-07-18 JP JP2016527144A patent/JP6302548B2/ja active Active
-
2016
- 2016-07-07 US US15/204,030 patent/US10103278B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9412879B2 (en) | 2016-08-09 |
| CN105393340B (zh) | 2020-03-27 |
| US20150021740A1 (en) | 2015-01-22 |
| CN105393340A (zh) | 2016-03-09 |
| US20160322511A1 (en) | 2016-11-03 |
| WO2015010089A1 (en) | 2015-01-22 |
| US10103278B2 (en) | 2018-10-16 |
| JP2016528731A (ja) | 2016-09-15 |
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