CN105393340B - 硅impatt二极管 - Google Patents

硅impatt二极管 Download PDF

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Publication number
CN105393340B
CN105393340B CN201480040871.4A CN201480040871A CN105393340B CN 105393340 B CN105393340 B CN 105393340B CN 201480040871 A CN201480040871 A CN 201480040871A CN 105393340 B CN105393340 B CN 105393340B
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China
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type region
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vertical
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CN201480040871.4A
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English (en)
Chinese (zh)
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CN105393340A (zh
Inventor
X·毕
T·L·克拉科夫斯基
D·韦泽
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/055—Manufacture or treatment of transit-time diodes, e.g. IMPATT or TRAPATT diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

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  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CN201480040871.4A 2013-07-18 2014-07-18 硅impatt二极管 Active CN105393340B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361847742P 2013-07-18 2013-07-18
US61/847,742 2013-07-18
US14/327,157 US9412879B2 (en) 2013-07-18 2014-07-09 Integration of the silicon IMPATT diode in an analog technology
US14/327,157 2014-07-09
PCT/US2014/047298 WO2015010089A1 (en) 2013-07-18 2014-07-18 Integration of silicon impatt diode in analog technology

Publications (2)

Publication Number Publication Date
CN105393340A CN105393340A (zh) 2016-03-09
CN105393340B true CN105393340B (zh) 2020-03-27

Family

ID=52342917

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480040871.4A Active CN105393340B (zh) 2013-07-18 2014-07-18 硅impatt二极管

Country Status (4)

Country Link
US (2) US9412879B2 (enExample)
JP (1) JP6302548B2 (enExample)
CN (1) CN105393340B (enExample)
WO (1) WO2015010089A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9525077B1 (en) * 2015-11-04 2016-12-20 Texas Instruments Incorporated Integration of a baritt diode
CN108875193B (zh) * 2018-06-12 2020-01-17 温州大学 评估SiC同质异构结IMPATT二极管性能的方法
CN109509808B (zh) * 2018-11-21 2020-01-14 温州大学 一种SiC/Si异质结侧向型光敏IMPATT二极管及其制备方法
CN109616552B (zh) * 2018-11-21 2020-04-14 温州大学 GaN/SiC异质结侧向型光控IMPATT二极管及其制备方法
CN120282540B (zh) * 2025-05-13 2026-02-03 深圳市晶扬电子有限公司 一种基于新型结构的低容值静电保护器件及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices
FR2160759B1 (enExample) 1971-11-26 1974-05-31 Thomson Csf
JPS5622147B2 (enExample) * 1972-06-28 1981-05-23
US4064620A (en) 1976-01-27 1977-12-27 Hughes Aircraft Company Ion implantation process for fabricating high frequency avalanche devices
US4030943A (en) 1976-05-21 1977-06-21 Hughes Aircraft Company Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits
US4230505A (en) 1979-10-09 1980-10-28 Rca Corporation Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
US4692791A (en) 1984-07-13 1987-09-08 Texas Instruments Incorporated Monolithic IMPATT with stripline leads
US4596070A (en) 1984-07-13 1986-06-24 Texas Instruments Incorporated Interdigitated IMPATT devices
US4859633A (en) 1985-01-31 1989-08-22 Texas Instruments Incorporated Process for fabricating monolithic microwave diodes
DE3725214A1 (de) 1986-09-27 1988-03-31 Licentia Gmbh Impatt-diode
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS
GB9823115D0 (en) * 1998-10-23 1998-12-16 Secr Defence Improvements in impatt diodes
US6660616B2 (en) * 2001-01-31 2003-12-09 Texas Instruments Incorporated P-i-n transit time silicon-on-insulator device
US8816443B2 (en) * 2001-10-12 2014-08-26 Quantum Semiconductor Llc Method of fabricating heterojunction photodiodes with CMOS
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
SG107645A1 (en) * 2002-09-10 2004-12-29 Sarnoff Corp Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies
JP2006173437A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
US9412879B2 (en) 2016-08-09
JP6302548B2 (ja) 2018-03-28
US20150021740A1 (en) 2015-01-22
CN105393340A (zh) 2016-03-09
US20160322511A1 (en) 2016-11-03
WO2015010089A1 (en) 2015-01-22
US10103278B2 (en) 2018-10-16
JP2016528731A (ja) 2016-09-15

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